JPH04139823A - Cleaning bath, cleaning system, and cleaning method - Google Patents
Cleaning bath, cleaning system, and cleaning methodInfo
- Publication number
- JPH04139823A JPH04139823A JP26399990A JP26399990A JPH04139823A JP H04139823 A JPH04139823 A JP H04139823A JP 26399990 A JP26399990 A JP 26399990A JP 26399990 A JP26399990 A JP 26399990A JP H04139823 A JPH04139823 A JP H04139823A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- solution
- quartz
- concentration
- hydrogen peroxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 77
- 238000000034 method Methods 0.000 title claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000010453 quartz Substances 0.000 claims abstract description 32
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 24
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000012535 impurity Substances 0.000 claims abstract description 24
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 12
- 239000007788 liquid Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 9
- 238000001914 filtration Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 2
- 239000000460 chlorine Substances 0.000 claims description 2
- 229910052801 chlorine Inorganic materials 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 21
- 238000011109 contamination Methods 0.000 abstract description 9
- 229910001385 heavy metal Inorganic materials 0.000 abstract description 3
- 229910052681 coesite Inorganic materials 0.000 abstract description 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- 230000006872 improvement Effects 0.000 abstract description 2
- 230000008569 process Effects 0.000 abstract description 2
- 229910052682 stishovite Inorganic materials 0.000 abstract description 2
- 229910052905 tridymite Inorganic materials 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 5
- 150000003377 silicon compounds Chemical class 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 21
- 239000000758 substrate Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- 230000007246 mechanism Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000001444 catalytic combustion detection Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- -1 and as a result Substances 0.000 description 1
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011086 high cleaning Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、 洗浄槽と洗浄システム及び洗浄方法に関す
るもので、特に半導体装置の製造工程に於ける基板の洗
浄に大きな効果を発揮する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a cleaning tank, a cleaning system, and a cleaning method, and is particularly effective in cleaning substrates in the manufacturing process of semiconductor devices.
従来の技術
半導体装置の製造工程では、 半導体基板の洗浄工程と
して、アンモニアと過酸化水素水の混合液からなる洗浄
液による洗浄がしばしば行われる。2. Description of the Related Art In the manufacturing process of conventional semiconductor devices, cleaning of semiconductor substrates is often performed using a cleaning solution consisting of a mixture of ammonia and hydrogen peroxide.
ここで使用される洗浄液内部の不純物や微粒子は、半導
体装置の製造歩留りに大きな影響を与えるので、使用す
る薬品には充分な注意が払われ 最高の品質の薬品が用
いられる。また高い洗浄効果を得るために 洗浄液を７
０℃程度まで温度を上げて使用する場合が多い。さらに
液中の微粒子を低減するために 循環濾過機構を設置し
たり、高温で液中のアンモニアや過酸化水素といった蒸
気圧の高い不安定な成分の濃度低下による洗浄効果の低
下を防止するために これらの成分の濃度制御装置を設
置する場合もある。Impurities and fine particles inside the cleaning solution used here have a major impact on the manufacturing yield of semiconductor devices, so careful attention is paid to the chemicals used, and chemicals of the highest quality are used. In addition, in order to obtain a high cleaning effect, use 7 cleaning solutions.
It is often used at a temperature raised to about 0°C. Furthermore, we installed a circulation filtration mechanism to reduce particulates in the liquid, and to prevent the cleaning effect from decreasing due to a decrease in the concentration of unstable components with high vapor pressure such as ammonia and hydrogen peroxide in the liquid at high temperatures. In some cases, concentration control devices for these components may be installed.
発明が解決しようとする課題
しかし 洗浄液を入れる洗浄槽の材質として、天然石英
材を使用する場合、第２図に示すようζへ天然石英材中
には鉄やアルミニウム等の金属を含有しており、アンモ
ニアと過酸化水素水の混合液は石英を侵食することから
、洗浄液の中に 石英中の不純物元素が混入する。特に
循環濾過機構や洗浄液中の成分濃度の制御機構を設置
した洗浄システムの場合、洗浄液中には石英から溶出し
た不純物元素が累積し この結果 半導体基板の表面に
は不純物元素が付着し 半導体装置の性能劣化や収率低
下の原因となる。Problems to be Solved by the Invention However, when using natural quartz material as the material for the cleaning tank containing the cleaning solution, as shown in Figure 2, the natural quartz material contains metals such as iron and aluminum. Since a mixture of ammonia and hydrogen peroxide corrodes quartz, impurity elements in the quartz mix into the cleaning solution. In particular, in the case of a cleaning system equipped with a circulating filtration mechanism or a mechanism for controlling the concentration of components in the cleaning solution, impurity elements eluted from quartz accumulate in the cleaning solution, and as a result, impurity elements adhere to the surface of the semiconductor substrate, resulting in damage to semiconductor devices. It causes performance deterioration and yield drop.
本発明は、 上述の課題に工みてなされ 上記石英より
の不純物混入を防止し 半導体基板表面の清浄度を保ち
、半導体装置の性能及び収率を向上させる洗浄槽と洗浄
システム及び洗浄方法を提供することを目的とする。The present invention has been made in consideration of the above-mentioned problems, and provides a cleaning tank, a cleaning system, and a cleaning method that prevent the contamination of impurities from the quartz, maintain the cleanliness of the semiconductor substrate surface, and improve the performance and yield of semiconductor devices. The purpose is to
課題を解決するための手段
本発明は、 アンモニアと過酸化水素水の混合液を洗浄
液として用いる洗浄槽を形成する材料として、含有不純
物量の極めて少ない合成石英を使用する。Means for Solving the Problems The present invention uses synthetic quartz containing extremely small amounts of impurities as a material for forming a cleaning tank that uses a mixture of ammonia and hydrogen peroxide as a cleaning liquid.
作用
アンモニアと過酸化水素水混合洗浄液は、 石英を溶解
する力Ｘ 合成石英中の重金属などの不純物元素濃度は
極めて低いので、液中の不純物は洗浄槽材料であるＳｉ
および５１０２系の化合物に限られる。半導体基板とし
てＳｌを使用する場合、洗浄液に基板が溶解することに
よっても、液中のＳｉおよびＳ ｉ ０２系の化合物の
濃度は上昇する力（他の不純物混入量はこれらに比べて
７桁以下の低濃度となり、従来より２桁以上低濃度であ
るた敦洗浄、液か不純物により汚染される心配かない。The cleaning solution mixed with ammonia and hydrogen peroxide has the power to dissolve quartz.
and 5102 series compounds. When using Sl as a semiconductor substrate, the concentration of Si and Si02-based compounds in the solution increases even when the substrate is dissolved in the cleaning solution (the amount of other impurities mixed in is less than 7 orders of magnitude compared to these). Since the concentration is more than two orders of magnitude lower than conventional cleaning methods, there is no need to worry about contamination with impurities.
すなわち、このような洗浄槽あるいは、 このような洗
浄槽を用いている洗浄システムにより洗浄することを特
徴とする洗浄方法を用いて、半導体装置を製造ずれは
製造過程での不純物汚染を回避できるので、半導体装置
の性能および収率を向上せしめることが可能である。That is, by using a cleaning method characterized by cleaning with such a cleaning tank or a cleaning system using such a cleaning tank, manufacturing deviations of semiconductor devices can be avoided.
Since impurity contamination during the manufacturing process can be avoided, it is possible to improve the performance and yield of semiconductor devices.
実施例
本発明の実施例として、アンモニアと過酸化水素水との
混合洗浄液を収納する洗浄槽と、前記洗浄槽を洗浄シス
テムに適用した例に関して、第１図および第２図を用い
て説明する。Embodiment As an embodiment of the present invention, a cleaning tank containing a mixed cleaning solution of ammonia and hydrogen peroxide solution, and an example in which the cleaning tank is applied to a cleaning system will be explained with reference to FIGS. 1 and 2. .
第１図は本実施例の洗浄システムの構成医 第２図は本
実施例に示す洗浄槽に使用した合成石英の不純物濃度を
測定した結果を表わしている。FIG. 1 shows the components of the cleaning system of this embodiment. FIG. 2 shows the results of measuring the impurity concentration of synthetic quartz used in the cleaning tank of this embodiment.
第１図において、 ｌは洗浄槽、２は循環濾過機構でポ
ンプ２ａとフィルタ２ｂを含へ ３は高純度アンモニア
水と過酸化水素水混合液からなる洗浄液、 ４は洗浄液
中のアンモニアと過酸化水素成分を一定に保つための濃
度制御装置である。In Fig. 1, l is a cleaning tank, 2 is a circulating filtration mechanism that includes a pump 2a and a filter 2b, 3 is a cleaning solution consisting of a mixture of high-purity ammonia water and hydrogen peroxide solution, and 4 is a mixture of ammonia and peroxide in the cleaning solution. This is a concentration control device to keep the hydrogen component constant.
循環濾過機構２により、洗浄液３中の微粒子は常に低い
レベルに保たれており、濃度制御装置４により、洗浄液
３の濃度も一定に保つことができる。このた八 洗浄液
を交換する必要性は、 洗浄液３中の不純物濃度上昇を
防止することが主目的となる。洗浄液３中の不純物濃度
上昇の原因１′！。The circulation filtration mechanism 2 keeps the particles in the cleaning liquid 3 at a low level, and the concentration control device 4 allows the concentration of the cleaning liquid 3 to be kept constant. The main purpose of the need to replace the cleaning liquid is to prevent an increase in the concentration of impurities in the cleaning liquid 3. Cause 1' of increase in impurity concentration in cleaning solution 3! .
洗浄する基板に付着して持ち込まれるものと、洗浄槽１
の溶解によるものとがある。−殻間 半導体製造工程で
は 半導体素子の性能に最も大きな害を及ぼす重金属や
遷移金属は、 厳しく管理されており、半導体基板がこ
れらにより汚染される可能性は極めて小さしも 従って
、天然石英の洗浄槽を使用した場合、石英材料よりの液
の汚染が支配的となる。この汚染を低減するためには、
汚染源である石英槽の材質を改善することが必要であ
る。Materials that adhere to the substrate to be cleaned and cleaning tank 1
This may be due to the dissolution of - Between shells In the semiconductor manufacturing process, heavy metals and transition metals, which cause the most damage to the performance of semiconductor devices, are strictly controlled, and the possibility of contamination of semiconductor substrates with these metals is extremely small. When using quartz material, contamination of the liquid from the quartz material becomes dominant. To reduce this pollution,
It is necessary to improve the material of the quartz tank, which is a source of contamination.
第２図に示すようＯ，−、合成石英の場合、現状の方法
で分析可能な重金属の濃度は元素により０．００３〜０
．０７ ｐ ｐｍである力丈 すべで検出限界以下の濃
度のものを得ることは容易にできる。また水素・窒素・
塩素以外の不純物元素含有量がすべて０、ｌｐｐｍ以下
である。洗浄槽１を形成する石英材料として高純度合成
石英を用いれば 天然石英に比べて、不純物含有量は１
／１００以下と非常に少なく、洗浄液の汚染防止に大き
な効果があることが分かる。As shown in Figure 2, in the case of O,-, synthetic quartz, the concentration of heavy metals that can be analyzed using the current method is 0.003 to 0, depending on the element.
．． It is easy to obtain a concentration of 0.07 ppm which is below the detection limit. Also hydrogen, nitrogen,
The content of all impurity elements other than chlorine is 0.1 ppm or less. If high-purity synthetic quartz is used as the quartz material forming the cleaning tank 1, the impurity content will be 1% compared to natural quartz.
/100 or less, which is very small, and it can be seen that it is very effective in preventing contamination of the cleaning liquid.
このように 合成石英を使用した洗浄槽１では、石英の
溶出による洗浄液３中の不純物濃度の上昇がないので、
従来通り、微粒子除去能力を高めるために 循環濾過機
構２を接続し 加えて洗浄液３中のアンモニアと過酸化
水素濃度を一定に保つ濃度制御装置４を接続しても、洗
浄液３中の不純物濃度が上昇する心配がないので、洗浄
液３の寿命を大幅に伸ばすことが可能となる。さらに
前記の洗浄槽１および、洗浄システムを使用して半導体
基板基板の洗浄を行うことによって、元来アンモニア過
酸化水素水を用いた洗浄方法の特徴である微粒子を除去
する能力が高いことの他に 基板表面に付着する不純物
も大幅に低減することが可能である。In this way, in the cleaning tank 1 using synthetic quartz, there is no increase in the concentration of impurities in the cleaning liquid 3 due to quartz elution.
As before, even if the circulation filtration mechanism 2 is connected to increase the particulate removal ability and the concentration control device 4 is connected to keep the ammonia and hydrogen peroxide concentrations in the cleaning liquid 3 constant, the impurity concentration in the cleaning liquid 3 will not change. Since there is no need to worry about the liquid rising, the life of the cleaning liquid 3 can be significantly extended. moreover
By cleaning the semiconductor substrate using the cleaning tank 1 and the cleaning system described above, in addition to the high ability to remove particulates, which is a characteristic of the cleaning method originally using ammonia hydrogen peroxide solution. Impurities adhering to the substrate surface can also be significantly reduced.
半導体装置製造工程への応用例として、例えば本発明を
ＣＣＤ固体撮像素子やｄＲＡＭの製造工程の、ゲート酸
化や容量絶縁膜形成工程に使用した場合、不純物析出が
原因となって生ずる種々の欠陥として、ＣＣＤにおいて
は 転送ラインやフォトダイオードのリーク電流による
画像欠取ｄＲＡＭにおいて１よ 蓄積容量のリーク電流
による保持時間不良家 に基づく収率低下の防止に絶大
な効果を発揮する。As an example of application to a semiconductor device manufacturing process, for example, if the present invention is used in the gate oxidation or capacitor insulating film formation process of a CCD solid-state image pickup device or dRAM manufacturing process, various defects caused by impurity precipitation may be detected. In CCDs, image loss due to leakage currents from transfer lines and photodiodes occurs.In dRAMs, it is extremely effective in preventing yield reductions due to poor retention times due to leakage currents in storage capacitors.
本実施例で（ミ 洗浄液としてアンモニア水と過酸化水
素水の混合液を使用する場合について述べた力丈 本例
において、薬液を加熱する為のヒータも石英のパイプの
中に金属ヒータを挿入したものが使用される。この金属
ヒータ保護用の石英パイプの材質も合成石英とすれ＋１
本発明の効果は倍増される。また 本発明は、 ア
ンモニア水と過酸化水素水の混合液の他に 例えば希釈
された弗化水素酸水溶液のような石英を溶解する薬液に
よる処理槽に応用することにより、前記実施例と同様の
効果を得ることかできる。In this example, we will discuss the case where a mixture of ammonia water and hydrogen peroxide is used as the cleaning liquid.In this example, the heater for heating the chemical solution was a metal heater inserted into a quartz pipe. The material of the quartz pipe used to protect the metal heater is also synthetic quartz.+1
The effect of the present invention is doubled. Furthermore, the present invention can be applied to a treatment tank using a chemical solution that dissolves quartz, such as a diluted hydrofluoric acid solution, in addition to the mixed solution of ammonia water and hydrogen peroxide solution, thereby achieving the same effect as in the embodiment described above. You can get the effect.
発明の効果
本発明による洗浄槽を半導体装置の製造工程に適用すれ
（′ｉ、半導体基板表面に付着する不純物元素濃度を大
幅に低減可能て 例えはＣＣＤ固体撮像素子の画像欠陥
の大幅な低減蛛 半導体装置の品質向上 安定化を達成
することができる。またこの洗浄槽に循環濾過機構と、
洗浄液中成分濃度制御機構とを設置した洗浄システムを
使用する洗浄方法によれば 液中の微粒子増加の防止及
び、液中成分が一定に保たれ しか耘 不純物元素の濃
度上昇が生じる心配がなしも 従って、半導体装置の製
造歩留が向上する他に 洗浄液の寿命が長くなり、薬品
の購入量を削減することが可能となるので、薬品コスト
が大幅に低減できる。これにまつわり、薬品の在庫管理
発注管理品質管理といった管理業務の大幅な合理化が可
能となる。Effects of the Invention By applying the cleaning bath according to the present invention to the manufacturing process of semiconductor devices, it is possible to significantly reduce the concentration of impurity elements adhering to the surface of a semiconductor substrate. It is possible to achieve quality improvement and stabilization of semiconductor devices.In addition, this cleaning tank is equipped with a circulation filtration mechanism,
A cleaning method using a cleaning system equipped with a mechanism for controlling the concentration of components in the cleaning solution prevents the increase of fine particles in the solution, keeps the components in the solution constant, and eliminates the risk of an increase in the concentration of impurity elements. Therefore, in addition to improving the manufacturing yield of semiconductor devices, the life of the cleaning liquid is extended and the amount of chemicals purchased can be reduced, resulting in a significant reduction in chemical costs. In this regard, management operations such as drug inventory management, ordering management, and quality control can be significantly streamlined.
第１図は本発明の実施例に示した洗浄システムの構成医
第２図は本実施例に使用した洗浄槽に用いた合成石英
と、従来の天然石英の不純物元素の含有量を示す図であ
る。Figure 1 is a diagram showing the components of the cleaning system shown in the example of the present invention. Figure 2 is a diagram showing the content of impurity elements in synthetic quartz used in the cleaning tank used in this example and conventional natural quartz. be.
Claims (4)
以外の不純物元素含有量がすべて０．１ｐｐｍ以下であ
ることを特徴とする洗浄槽。(2) A cleaning tank, wherein the synthetic quartz material according to claim 1 has a content of all impurity elements other than hydrogen, nitrogen, and chlorine of 0.1 ppm or less.
分とする洗浄液を含有し、合成石英材より形成された洗
浄槽と、前記洗浄液を循環して濾過させる循環濾過装置
と、前記洗浄液中のアンモニアと過酸化水素との濃度を
制御する濃度制御装置とを有することを特徴とする洗浄
システム。(3) A cleaning tank made of synthetic quartz material and containing a cleaning liquid mainly composed of a mixture of high-purity ammonia and hydrogen peroxide; a circulation filtration device that circulates and filters the cleaning liquid; A cleaning system comprising: a concentration control device that controls the concentration of ammonia and hydrogen peroxide therein.
分とする洗浄液を含有し、合成石英材より形成された洗
浄槽に、被洗浄物を浸漬する工程を含むことを特徴とす
る洗浄方法。(4) Cleaning characterized by including a step of immersing the object to be cleaned in a cleaning tank made of synthetic quartz material and containing a cleaning liquid mainly composed of a mixture of high-purity ammonia and hydrogen peroxide solution. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2263999A JP3072121B2 (en) | 1990-10-01 | 1990-10-01 | Cleaning tank, cleaning system and cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2263999A JP3072121B2 (en) | 1990-10-01 | 1990-10-01 | Cleaning tank, cleaning system and cleaning method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04139823A true JPH04139823A (en) | 1992-05-13 |
| JP3072121B2 JP3072121B2 (en) | 2000-07-31 |
Family
ID=17397143
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2263999A Expired - Lifetime JP3072121B2 (en) | 1990-10-01 | 1990-10-01 | Cleaning tank, cleaning system and cleaning method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3072121B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5339842A (en) * | 1992-12-18 | 1994-08-23 | Specialty Coating Systems, Inc. | Methods and apparatus for cleaning objects |
| US5419351A (en) * | 1993-04-02 | 1995-05-30 | National Semiconductor Corporation | Final rinse/dry system for critical cleaning applications |
| US6843259B2 (en) * | 2001-04-05 | 2005-01-18 | Tokyo Electron Limited | Solution treatment unit |
| WO2013171973A1 (en) * | 2012-05-18 | 2013-11-21 | 信越半導体株式会社 | Method for cleaning semiconductor wafer |
-
1990
- 1990-10-01 JP JP2263999A patent/JP3072121B2/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5339842A (en) * | 1992-12-18 | 1994-08-23 | Specialty Coating Systems, Inc. | Methods and apparatus for cleaning objects |
| US5419351A (en) * | 1993-04-02 | 1995-05-30 | National Semiconductor Corporation | Final rinse/dry system for critical cleaning applications |
| US5776259A (en) * | 1993-04-02 | 1998-07-07 | National Semiconductor Corporation | Method for final rinse/dry for critical cleaning application |
| US6843259B2 (en) * | 2001-04-05 | 2005-01-18 | Tokyo Electron Limited | Solution treatment unit |
| WO2013171973A1 (en) * | 2012-05-18 | 2013-11-21 | 信越半導体株式会社 | Method for cleaning semiconductor wafer |
| JP2013243219A (en) * | 2012-05-18 | 2013-12-05 | Shin Etsu Handotai Co Ltd | Method for cleaning semiconductor wafer |
| CN104335330A (en) * | 2012-05-18 | 2015-02-04 | 信越半导体股份有限公司 | Method for cleaning semiconductor wafer |
| KR20150013505A (en) * | 2012-05-18 | 2015-02-05 | 신에쯔 한도타이 가부시키가이샤 | Method for cleaning semiconductor wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3072121B2 (en) | 2000-07-31 |
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