JPH04139233A - Gas barrier film - Google Patents
Gas barrier filmInfo
- Publication number
- JPH04139233A JPH04139233A JP2261812A JP26181290A JPH04139233A JP H04139233 A JPH04139233 A JP H04139233A JP 2261812 A JP2261812 A JP 2261812A JP 26181290 A JP26181290 A JP 26181290A JP H04139233 A JPH04139233 A JP H04139233A
- Authority
- JP
- Japan
- Prior art keywords
- film
- gas barrier
- barrier film
- inorganic compound
- transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004888 barrier function Effects 0.000 title claims abstract description 29
- 150000002484 inorganic compounds Chemical class 0.000 claims abstract description 13
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 13
- 230000009477 glass transition Effects 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 abstract description 18
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 239000000853 adhesive Substances 0.000 abstract description 4
- 230000001070 adhesive effect Effects 0.000 abstract description 4
- 239000004831 Hot glue Substances 0.000 abstract description 3
- 238000010894 electron beam technology Methods 0.000 abstract description 3
- 235000013305 food Nutrition 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract description 3
- 238000004806 packaging method and process Methods 0.000 abstract description 3
- 229920002492 poly(sulfone) Polymers 0.000 abstract description 3
- 238000003475 lamination Methods 0.000 abstract 1
- -1 polyethylene terephthalate Polymers 0.000 description 6
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 239000004743 Polypropylene Substances 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000001913 cellulose Substances 0.000 description 2
- 229920002678 cellulose Polymers 0.000 description 2
- 239000003814 drug Substances 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Landscapes
- Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は食品、薬品等の包装、エレクトロミネセンス素
子（以下、ＥＬ素子と称す）の保護に好適なガスバリヤ
フィルムに関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a gas barrier film suitable for packaging foods, medicines, etc., and protecting electroluminescent elements (hereinafter referred to as EL elements).
（従来の技術）
従来から、食品、薬品の変質を防止するため、これらを
ガスバリヤフィルムにより包装することが行われている
。(Prior Art) Conventionally, in order to prevent food and medicine from deteriorating in quality, they have been packaged with a gas barrier film.
また、エレクトロニクスの分野では、例えば、ＥＬ素子
をガスバリヤフィルムで保護し、その長寿命化を図って
いる。ＥＬ素子をガスバリヤフィルムで被覆保護して成
るエレクトロルミネセンス発光装置（以下、ＥＬ装置と
称す）の寿命は、ガスバリヤフィルムの防湿性に左右さ
れることが知られており、該フィルムのガスバリヤ性を
高めて水蒸気透過量の低減を図ることは重要である。Furthermore, in the field of electronics, for example, EL elements are protected with gas barrier films to extend their lifespan. It is known that the lifespan of an electroluminescent light emitting device (hereinafter referred to as an EL device) in which an EL element is covered and protected with a gas barrier film is affected by the moisture resistance of the gas barrier film. It is important to increase the water vapor transmission rate and reduce the amount of water vapor permeation.
かような、ガスバリヤフィルムとしてはポリエチレンテ
レフタレートフィルム、ポリプロピレンフィルム、ポリ
アミドフィルムの表面に無機化合物層を設けたものが知
られている。その−例として、フィルム表面に酸化ケイ
素や酸化アルミニウムを蒸着したフィルム（特公昭５３
−１２９５３号公報、特公昭６２−４９８５６号公報）
を挙げることができる。As such gas barrier films, polyethylene terephthalate films, polypropylene films, and polyamide films with an inorganic compound layer provided on the surface are known. As an example, a film with silicon oxide or aluminum oxide deposited on the surface of the film (Special Publication No. 53
-12953 Publication, Special Publication No. 62-49856)
can be mentioned.
（発明が解決しようとする課題）
ところで、ガスバリヤフィルムにより各種物品を包装、
被覆する場合、通常、ヒートシールが採用されるが、当
然のことながらフィルムには熱と応力が作用することに
なる。(Problem to be solved by the invention) By the way, various articles are packaged with gas barrier films,
When coating, heat sealing is usually employed, but as a matter of course, heat and stress are applied to the film.
そして、従来のガスバリヤフィルムを使用していると、
この熱と応力によりフィルムに伸び現象が生じ、この伸
び現象に無機化合物層が追随できず、微小なりラックが
発生し、ガスバリヤ性が低下してしまうという問題があ
った。And if you use a conventional gas barrier film,
This heat and stress cause an elongation phenomenon in the film, and the inorganic compound layer is unable to follow this elongation phenomenon, resulting in the generation of minute racks and a reduction in gas barrier properties.
（課題を解決するための手段）
本発明者は従来技術の有する上記問題を解決するため、
種々研究の結果、特定のフィルムを用いることにより、
使用時に熱や応力が作用しても性能低下を生ずることの
ないガスバリヤフィルムが得られることを見い出し、本
発明を完成するに至った。(Means for Solving the Problems) In order to solve the above problems of the prior art, the present inventors
As a result of various studies, by using a specific film,
The present inventors have discovered that a gas barrier film that does not deteriorate in performance even when subjected to heat or stress during use can be obtained, and the present invention has been completed.
即ち、本発明に係るガスバリヤフィルムは、ガラス転移
温度が１４０℃以上である透明フィルムの少なくとも片
面に、無機化合物層が設けられて成ることを特徴とする
ものである。That is, the gas barrier film according to the present invention is characterized in that an inorganic compound layer is provided on at least one side of a transparent film having a glass transition temperature of 140° C. or higher.
本発明において、基材として用いられる透明フィルムは
、ガラス転移温度（Ｔｇ）が１４０℃以上好ましくは１
６０ ’Ｃ以上のものである。ガラス転移温度がこれよ
りも低いフィルムを用いた場合には、包装等の作業時に
作用する熱や応力により、無機化合物層にクラックを生
じ易（てガスバリヤ性の低下したものとなるので、好ま
しくない。In the present invention, the transparent film used as the base material has a glass transition temperature (Tg) of 140°C or higher, preferably 140°C or higher.
60'C or higher. If a film with a glass transition temperature lower than this is used, it is undesirable because the inorganic compound layer is likely to crack due to the heat and stress applied during packaging etc. (and the gas barrier properties will be reduced). .
また、このフィルムの光透過率は約８５％以上とするの
が好ましいことが判明している。It has also been found that the light transmittance of this film is preferably about 85% or more.
かような透明フィルムの具体例としては、ボリアリレー
ト、ポリエーテルイミド、ポリエーテルサルフォン、ポ
リサルフォン、ポリイミド等のプラスチックフィルムを
挙げることができ、これらフィルムの厚さは特に限定さ
れるものではないが、通常、約５〜３００μｍである。Specific examples of such transparent films include plastic films such as polyarylate, polyetherimide, polyethersulfone, polysulfone, and polyimide, and the thickness of these films is not particularly limited. , usually about 5 to 300 μm.
そして、本発明においてはこの透明フィルムの片面また
は両面にガスバリヤ性を有する無機化合物層が形成され
る。無機化合物の好ましい例としては、酸化ケイ素、酸
化アルミニウム、酸化マグネシウム、酸化亜鉛、酸化ジ
ルコニウム、酸化チタン、酸化インジウム、酸化スズ、
酸化インジウムと酸化スズの混合物等が挙げられる。In the present invention, an inorganic compound layer having gas barrier properties is formed on one or both sides of this transparent film. Preferred examples of inorganic compounds include silicon oxide, aluminum oxide, magnesium oxide, zinc oxide, zirconium oxide, titanium oxide, indium oxide, tin oxide,
Examples include a mixture of indium oxide and tin oxide.
透明フィルム表面への無機化合物層の形成は、真空蒸着
法、イオンブレーティング法、スパッタリング法、電子
ビーム加熱法等の既に知られている方法により行うこと
ができる。そして、無機化合物層の厚さはガスバリヤ性
を保証すると共にフィルムの柔軟性を維持するため、通
常約３０〜３００ｎｍ好ましくは５０〜２００ ｎｍと
する。The inorganic compound layer can be formed on the surface of the transparent film by a known method such as a vacuum evaporation method, an ion blating method, a sputtering method, or an electron beam heating method. The thickness of the inorganic compound layer is generally about 30 to 300 nm, preferably 50 to 200 nm, in order to ensure gas barrier properties and maintain flexibility of the film.
本発明に係るガスバリヤフィルムは、その所定枚数を接
着剤を介して接合する方法等により一体化せしめた積層
タイプのものであってもよい。また、使用時におけるヒ
ートシール性を向上させるため、ホットメルト接着剤層
を設けることができ、この接着剤層は無機化合物層上に
設けるのが好適であるが、透明フィルム上に設けること
もできる。ホントメルト接着剤は格別である必要はな（
、エチレン−酢酸ビニル共重合体、ポリエチレン、ポリ
プロピレン等を主成分とするものを使用できる。The gas barrier film according to the present invention may be of a laminated type in which a predetermined number of films are joined together using an adhesive or the like. In addition, in order to improve heat sealability during use, a hot melt adhesive layer can be provided, and this adhesive layer is preferably provided on the inorganic compound layer, but it can also be provided on the transparent film. . Really, melt adhesives don't have to be special (
, ethylene-vinyl acetate copolymer, polyethylene, polypropylene, etc. can be used.
（発明の効果）
本発明は上記のように構成されており、基材としてガラ
ス転移温度が１４０℃以上のフィルムを用いているので
、使用時に作用する熱や応力による性能低下がなく、ガ
スバリヤ性を充分に発揮できる。(Effects of the Invention) The present invention is constructed as described above, and since a film with a glass transition temperature of 140°C or higher is used as the base material, there is no performance deterioration due to heat or stress applied during use, and gas barrier properties are maintained. can fully demonstrate.
（実施例） 以下、実施例により本発明を更に詳細に説明する。(Example) Hereinafter, the present invention will be explained in more detail with reference to Examples.
実施例
ガラス転移温度１９０℃１波長５５０ ｎｍの光線の透
過率８８％、厚さ２５μｍのポリサルフォンフィルムの
片面に、酸化ケイ素を電子ビーム加熱法により膜厚が１
１００ｎになるように蒸着する。そしてこの蒸着フィル
ム３枚をフィルム−酸化ケイ素−フィルムー酸化ケイ素
−フィルムー酸化ケイ素の順になるように重ね合わせ、
透明接着剤により接合一体化する。Example Silicon oxide was deposited on one side of a polysulfone film having a glass transition temperature of 190°C and a transmittance of 88% for light with a wavelength of 550 nm and a thickness of 25 μm by electron beam heating to a film thickness of 1 μm.
Vapor deposition is performed to a thickness of 100n. Then, these three vapor-deposited films are stacked in the order of film-silicon oxide-film-silicon oxide-film-silicon oxide,
They are joined together using transparent adhesive.
次に、酸化ケイ素層上にエチレン−酢酸ビニル共重合体
（酢酸ビニル含量８重量％）から成るホットメルト接着
剤層を溶融押出法により形成することにより、積層タイ
プのガスバリヤフィルムを得た。Next, a hot melt adhesive layer made of ethylene-vinyl acetate copolymer (vinyl acetate content: 8% by weight) was formed on the silicon oxide layer by melt extrusion to obtain a laminated type gas barrier film.
一方、これとは別にポリエチレンテレフタレートフィル
ムの片面に酸化インジウムと酸化スズの混合物から成る
透明導電層を設けて成る透明電極と、硫化亜鉛系の蛍光
粉末をシアノエチル化セルロース中に分散した発光層と
、酸化チタン粉末をシアノエチル化セルロース中に分散
した絶縁層と、アルミニウム製の透明電極とをこの順序
で積層したＥＬ素子を用意する。On the other hand, separately from this, there is a transparent electrode formed by providing a transparent conductive layer made of a mixture of indium oxide and tin oxide on one side of a polyethylene terephthalate film, and a light emitting layer made of zinc sulfide fluorescent powder dispersed in cyanoethylated cellulose. An EL element is prepared in which an insulating layer in which titanium oxide powder is dispersed in cyanoethylated cellulose and a transparent electrode made of aluminum are laminated in this order.
そして、この素子の両面に上記積層タイプのガスバリヤ
フィルムをホントメルト接着剤層が内側になるように重
ね合わせ、温度１３０℃，ロール線圧５ｋｇ／ｃｍ、張
力３Ｋｇｆの条件でロールを用いて加熱加圧することに
より、ＥＬ素子をガスバリヤフィルムで被覆保護した構
造のＥＬ装置を得た。Then, the laminated type gas barrier film described above was stacked on both sides of this element so that the true melt adhesive layer was on the inside, and heated using a roll at a temperature of 130°C, a roll linear pressure of 5kg/cm, and a tension of 3Kgf. By applying pressure, an EL device having a structure in which the EL element was covered and protected with a gas barrier film was obtained.
このＥＬ装置を１００■、４００Ｈｚの電源により連続
作動させ、その輝度半減期を測定したところ、２０００
時間であった。When this EL device was continuously operated with a power source of 100 Hz and 400 Hz, and its luminance half-life was measured, it was found to be 2000
It was time.
比較例
ガラス転移温度７０℃１波長５５０ ｎｍの光線透過率
８７％、厚さ２５μｍのポリエチレンテレフタレートフ
ィルムをガスバリヤフィルムの基材として用いること以
外は実施例と同様にして、積層タイプのガスバリヤフィ
ルムおよびＥＬ装置を得た。Comparative Example A laminated type gas barrier film and EL were prepared in the same manner as in the example except that a polyethylene terephthalate film having a glass transition temperature of 70° C. and a light transmittance of 87% at a wavelength of 550 nm and a thickness of 25 μm was used as the base material of the gas barrier film. Got the device.
このＥＬ装置を実施例と同様に連続作動させたところ、
約３００時間で透過水分により発光面の部分的黒化現象
が生じ、また、輝度半減期も１０００時間と短かった。When this EL device was operated continuously in the same manner as in the example,
Partial blackening of the light-emitting surface occurred after about 300 hours due to permeated moisture, and the luminance half-life was also short at 1000 hours.
Claims (1)
なくとも片面に、ガスバリヤ性を有する無機化合物層が
設けられて成るガスバリヤフィルム。A gas barrier film comprising an inorganic compound layer having gas barrier properties provided on at least one side of a transparent film having a glass transition temperature of 140° C. or higher.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2261812A JPH04139233A (en) | 1990-09-28 | 1990-09-28 | Gas barrier film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2261812A JPH04139233A (en) | 1990-09-28 | 1990-09-28 | Gas barrier film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04139233A true JPH04139233A (en) | 1992-05-13 |
Family
ID=17367062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2261812A Pending JPH04139233A (en) | 1990-09-28 | 1990-09-28 | Gas barrier film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04139233A (en) |
-
1990
- 1990-09-28 JP JP2261812A patent/JPH04139233A/en active Pending
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