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JPH0413424B2 - - Google Patents

Info

Publication number
JPH0413424B2
JPH0413424B2 JP58144945A JP14494583A JPH0413424B2 JP H0413424 B2 JPH0413424 B2 JP H0413424B2 JP 58144945 A JP58144945 A JP 58144945A JP 14494583 A JP14494583 A JP 14494583A JP H0413424 B2 JPH0413424 B2 JP H0413424B2
Authority
JP
Japan
Prior art keywords
vacuum chamber
gate
shutter
space
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58144945A
Other languages
Japanese (ja)
Other versions
JPS6037139A (en
Inventor
Katsuyoshi Kudo
Shinichiro Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14494583A priority Critical patent/JPS6037139A/en
Publication of JPS6037139A publication Critical patent/JPS6037139A/en
Publication of JPH0413424B2 publication Critical patent/JPH0413424B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67126Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Intermediate Stations On Conveyors (AREA)
  • Lift Valve (AREA)
  • Details Of Valves (AREA)

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は、エツチング装置、スパツタ装置など
の半導体製造装置に用いられるウエーハ移送経路
におけるゲートバルブ機構に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a gate valve mechanism in a wafer transfer path used in semiconductor manufacturing equipment such as etching equipment and sputtering equipment.

〔発明の背景〕[Background of the invention]

従来この種のゲートバルブ機構は、第1図に示
す如くウエーハ移送方向に対しゲートシール面2
4が垂直になつており、シヤツター4は予備真空
室13に対し垂直に移動する構造であつた。18
は主真空室である。
Conventionally, this type of gate valve mechanism has a gate sealing surface 2 with respect to the wafer transfer direction as shown in FIG.
4 was vertical, and the shutter 4 was structured to move perpendicularly to the preliminary vacuum chamber 13. 18
is the main vacuum chamber.

この構造において、ゲートバルブの閉動作は以
下による。ブラケツト14を介して予備真空室1
3に取付けられたエアーシリンダー16によりカ
ツプリング15を介してロツド11が押し上げら
れ、さらにカツプリング10を介して支え7がガ
イド5に沿つて上部に移動する。この時、リンク
8により支持されたシヤツター4の上に設けたロ
ーラー2が図のようにストツパー3に当つた時点
より、シヤツター4はシールに対し垂直に移動
し、シール面に押し付けられる。
In this structure, the closing operation of the gate valve is as follows. Pre-vacuum chamber 1 via bracket 14
The rod 11 is pushed up via the coupling 15 by the air cylinder 16 attached to the rod 3, and the support 7 is moved upward along the guide 5 via the coupling 10. At this time, from the time when the roller 2 provided on the shutter 4 supported by the link 8 hits the stopper 3 as shown in the figure, the shutter 4 moves perpendicularly to the seal and is pressed against the seal surface.

ゲートバルブの開動作は、エアーシリンダー1
6によるロツド11の引き下げにより支え7が下
降することにより行なわれるが、初期の状態で
は、支え7が下降してもねじりばね9が支え7に
取付けたピン20を介してシヤツター4を押し上
げていることから、シヤツター4は下降せずリン
ク8の傾きに見合つた寸法だけシール面から垂直
に離れ、その後下降することになる。
The opening operation of the gate valve is performed by air cylinder 1.
This is done by lowering the support 7 by pulling down the rod 11 by the lever 6. In the initial state, even if the support 7 is lowered, the torsion spring 9 pushes up the shutter 4 via the pin 20 attached to the support 7. Therefore, the shutter 4 does not descend, but moves vertically away from the sealing surface by a distance commensurate with the inclination of the link 8, and then descends.

以上の構造および動作では次のような欠点があ
つた。
The above structure and operation had the following drawbacks.

(1) 真空室相互間のウエーハのインライン移送を
する場合、コンベアー間スペースが広くなりス
ムーズな移送ができない。
(1) When transferring wafers in-line between vacuum chambers, the space between the conveyors becomes large and smooth transfer cannot be achieved.

(2) シヤツター駆動機構が往復動であることか
ら、真空シールには溶接ベローズを使用してお
り高価である。
(2) Since the shutter drive mechanism is reciprocating, a welded bellows is used for the vacuum seal, which is expensive.

(3) 真空室内に摺動部分が多いことからダストが
発生し、製品歩留りが低下するおそれがある。
(3) There are many sliding parts in the vacuum chamber, which may generate dust and reduce product yield.

(4) 機構が複雑であり、組立調整、メンテナンス
に多大の工数を必要とする。
(4) The mechanism is complex and requires a large amount of man-hours for assembly, adjustment, and maintenance.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、真空室相互間のウエーハのイ
ンライン移送を可能とし、機構が簡単で安価であ
り、さらに真空室内に摺動部分が少なくダストの
生じないゲートバルブ機構を提供することにあ
る。
An object of the present invention is to provide a gate valve mechanism that enables in-line transfer of wafers between vacuum chambers, has a simple and inexpensive mechanism, and has few sliding parts in the vacuum chamber and does not generate dust.

〔発明の概要〕[Summary of the invention]

本発明は、シヤツターの開閉機構を往復動から
回動方式に変更することにより、機構の単純化を
図る過程でゲートシール面をウエーハ移送面に対
し垂直な面から傾斜を付けて開閉時における移送
面のデツドスペースを少なくし、真空室相互間の
ウエーハの搬送手段の搬送端部間を近づけ、ウエ
ーハのインライン移送を可能にしたものである。
In the present invention, by changing the shutter opening/closing mechanism from reciprocating to rotating, the gate sealing surface is inclined from a plane perpendicular to the wafer transfer surface in the process of simplifying the mechanism. The dead space on the surface is reduced and the transport ends of the wafer transport means between the vacuum chambers are brought closer together, making it possible to transport wafers in-line.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の一実施例を第2図、第3図によ
り説明する。尚、第2図は、本発明の一実施例の
ゲートバルブ機構の側面断面図、第3図は、第2
図のシヤツター開放時の正面図である。
An embodiment of the present invention will be described below with reference to FIGS. 2 and 3. Note that FIG. 2 is a side sectional view of a gate valve mechanism according to an embodiment of the present invention, and FIG.
FIG. 3 is a front view of the shutter shown in the figure when it is opened.

第2図、第3図で、内部に第1の搬送手段、こ
の場合、コンベアーを有する真空室、この場合、
主真空室34と内部に第2の搬送手段、この場
合、コンベアーを有する他の真空室、この場合、
予備真空室30との間にゲートバルブ本体33
が、取付用のボルト21,22により気密に設け
られている。ゲートバルブ本体33には、コンベ
アー間で受け渡されて主真空室34、予備真空室
30間で移送されるウエーハ(図示省略)が通過
するゲート開孔部36が形成されている。主真空
室34内部のコンベアーのベルトに載せられて移
送されるウエーハの表面に対応して頂面を有する
空間部が、ゲートバルブ本体33の主真空室34
側から形成されている。主真空室34内部のコン
ベアーの搬送端部、この場合、ベルトが巻き掛け
られたローラが、主真空室34側空間部の側面に
近接して配設されている。予備真空室30内部の
コンベアーの搬送端部、この場合、ベルトが巻き
掛けられたローラが、主真空室34側空間部の側
面と反対側の側面に近接して配設されている。つ
まり、各コンベアーの搬送端部は、ウエーハを良
好、支障なく受渡しできる程度に近づけられる。
ゲート開孔部36は、主真空室34側空間部の頂
面と側面とが交わる角部に形成されている。ゲー
トシール面24が、ウエーハの移送方向に垂直な
面に対しゲートバルブ本体33内に向かつて傾
斜、この場合、約45度程度傾斜させられゲート開
孔部36を含み主真空室34側空間部の頂面と側
面とが交わる各部に形成されている。シヤフト3
9が、移送されるウエーハの表面と平行な回動軸
心を有し主真空室34側空間部の上方位置でゲー
トバルブ本体33の予備真空室30側から形成さ
れた空間部に設けられている。ゲートシール面2
4のシヤツター25の一端が、他端の回動軌跡が
予備真空室30内部のコンベアーのローラに接触
しないように取付用のボルト23によりシヤフト
39に設けられている。シヤツター25には、ゲ
ートシール面24に対応してOリング26が設け
られている。ゲートシール面24とシヤツター2
5のシールは、Oリング26に限定されるもので
はなく、シヤツター25にフツ素ゴムのシート或
いは成形品を取り付けたもの、又は成形品単体で
も良い。ゲートシール面24の幅についても面圧
を考慮して任意に設定することができる。ベアリ
ングケース41,50が、シール用のOリング4
3,48を介し取付用のボルト42によりゲート
バルブ本体33に機密に取り付けられている。シ
ヤフト39は、ベアリングケース41,50内の
ボールベアリング44により保持されている。シ
ヤフト39の一端は、カツプリング46によりロ
ータリーアクチユエーター45に連続されてい
る。ロータリーアクチユエーター45は、シヤフ
ト39を回動させるためのものであり、回動動作
をシヤフト39に付与するものであれば他の方式
のものでも良い。
2 and 3, a vacuum chamber having a first conveying means, in this case a conveyor, therein;
a main vacuum chamber 34 and another vacuum chamber having a second conveying means, in this case a conveyor, inside;
A gate valve body 33 is placed between the preliminary vacuum chamber 30 and the
is airtightly provided with mounting bolts 21 and 22. The gate valve body 33 is formed with a gate opening 36 through which a wafer (not shown) transferred between the conveyors and transferred between the main vacuum chamber 34 and the preliminary vacuum chamber 30 passes. The main vacuum chamber 34 of the gate valve body 33 has a space portion having a top surface corresponding to the surface of the wafer to be transferred on the belt of the conveyor inside the main vacuum chamber 34 .
Formed from the side. A conveying end of the conveyor inside the main vacuum chamber 34 , in this case a roller around which a belt is wound, is arranged close to the side surface of the space on the side of the main vacuum chamber 34 . A conveying end of the conveyor inside the preliminary vacuum chamber 30, in this case a roller around which a belt is wound, is disposed close to the side surface opposite to the side surface of the main vacuum chamber 34 side space. In other words, the conveying ends of each conveyor are brought close enough to each other to allow wafers to be transferred smoothly and without any problem.
The gate opening 36 is formed at a corner where the top surface and side surface of the main vacuum chamber 34 side space intersect. The gate sealing surface 24 is inclined toward the inside of the gate valve main body 33 with respect to a plane perpendicular to the wafer transfer direction, in this case, it is inclined at about 45 degrees to form a space on the side of the main vacuum chamber 34 including the gate opening 36. It is formed at each part where the top and side surfaces intersect. Shaft 3
9 is provided in a space formed from the preliminary vacuum chamber 30 side of the gate valve body 33 at a position above the main vacuum chamber 34 side space and has a rotation axis parallel to the surface of the wafer to be transferred. There is. Gate seal surface 2
One end of the shutter 25 of No. 4 is attached to the shaft 39 with a mounting bolt 23 so that the rotation locus of the other end does not come into contact with the rollers of the conveyor inside the preliminary vacuum chamber 30. The shutter 25 is provided with an O-ring 26 corresponding to the gate sealing surface 24. Gate seal surface 24 and shutter 2
The seal 5 is not limited to the O-ring 26, but may be a fluororubber sheet or molded product attached to the shutter 25, or a single molded product. The width of the gate seal surface 24 can also be arbitrarily set in consideration of surface pressure. The bearing cases 41 and 50 are O-rings 4 for sealing.
3 and 48, and is securely attached to the gate valve body 33 with a mounting bolt 42. Shaft 39 is held by ball bearings 44 within bearing cases 41 and 50. One end of the shaft 39 is connected to a rotary actuator 45 by a coupling 46. The rotary actuator 45 is for rotating the shaft 39, and may be of any other type as long as it imparts a rotational motion to the shaft 39.

第2図、第3図で、ウエーハは、今、予備真空
室30内部のコンベアーのベルトに載せられてい
る。この状態で、該コンベアーのローラが時計回
り方向に回転させられる。これにより、ウエーハ
は、予備真空室30内を主真空室34に向かつて
搬送される。一方、ロータリーアクチユエーター
45を作動させることで、シヤフト39が、時計
回り方向に部分的に回転させられ、シヤツター2
5は、ゲートシール面24が傾斜状態から水平状
態になるように一端を回転支点として回転させら
れる。これにより、ゲート開孔部36は、ウエー
ハが通過可能に開けられる。ウエーハは、予備真
空室34内部のコンベアーから順次離れながら、
かつ、該コンベアーで支持されてゲート開孔部3
6を通過させられる。ゲート開孔部36を通過途
中においてウエーハの一端は主真空室34内部の
コンベアーの搬送端部に受け取られる。主真空室
34内部のコンベアーのローラも時計回り方向に
回転させられている。これにより、ウエーハは、
予備真空室30内部のコンベアーから主真空室3
0内部のコンベアーに渡され、そして、ゲート開
孔部36を完全に通過させられる。その後、主真
空室34内部のコンベアーによりウエーハは主真
空室34内の所定場所に向かつて搬送される。一
方、ウエーハが通過した後、ロータリーアクチユ
エーター45を作動させることで、シヤフト39
が、反時計回り方向に部分的に回転させられ、シ
ヤツター25は、ゲートシール面24が水平状態
から元の傾斜状態になるように一端を回転支点と
して回転させられる。これにより、ゲート開孔部
36は閉められる。
In FIGS. 2 and 3, the wafer is now placed on a conveyor belt inside the pre-vacuum chamber 30. In FIGS. In this state, the rollers of the conveyor are rotated clockwise. Thereby, the wafer is transported within the preliminary vacuum chamber 30 toward the main vacuum chamber 34. On the other hand, by operating the rotary actuator 45, the shaft 39 is partially rotated clockwise, and the shaft 2
5 is rotated using one end as a rotation fulcrum so that the gate seal surface 24 changes from an inclined state to a horizontal state. Thereby, the gate opening 36 is opened to allow the wafer to pass through. The wafers are sequentially separated from the conveyor inside the preliminary vacuum chamber 34,
And the gate opening 3 is supported by the conveyor.
6 is allowed to pass. While passing through the gate aperture 36, one end of the wafer is received by the transport end of the conveyor inside the main vacuum chamber 34. The rollers of the conveyor inside the main vacuum chamber 34 are also rotated in a clockwise direction. As a result, the wafer
From the conveyor inside the preliminary vacuum chamber 30 to the main vacuum chamber 3
0 to the internal conveyor and passed completely through the gate aperture 36. Thereafter, the wafer is transported to a predetermined location within the main vacuum chamber 34 by a conveyor inside the main vacuum chamber 34 . On the other hand, after the wafer has passed, the rotary actuator 45 is actuated to move the shaft 39
is partially rotated in the counterclockwise direction, and the shutter 25 is rotated using one end as a rotational fulcrum so that the gate seal surface 24 returns from the horizontal state to the original inclined state. As a result, the gate opening 36 is closed.

本実施例によれば、主真空室側から空間部を形
成し該空間部の側面に主真空室及び予備真空室内
部のコンベアーの搬送端部をそれぞれ近接して設
け、ゲート開孔部を主真空室側の空間部の頂面と
側面とが交わる角部に形成し、該角部にゲートシ
ール面をウエーハの移送方向に垂直な面に対しゲ
ートバルブ本体内に向かつて約45度程度傾斜させ
て形成し、シヤフトを移送されるウエーハの表面
と平行な回動軸心を有し主真空室側空間部の上方
位置でゲートバルブ本体の予備真空室側から形成
された空間部に設け、ゲートシール面のシヤツタ
ーをシヤフトを回動させて開閉させるようにして
いるので、主真空室及び予備真空室内部のコンベ
アーの搬送端部間を近づけることができ、ウエー
ハのインライン移送を容易にスムーズに行なうこ
とができる。また、予備真空室内での摺動部分が
シヤフト部分だけであり、従来に比べて摺動部分
を少なくできるので、ダスト発生を低減でき製品
歩留まりを向上できる。更に、製造がシヤツター
を回動させるだけの構造と単純であるため、メン
テナンスが容易であり原価低減及び保守費用を低
減できる。
According to this embodiment, a space is formed from the main vacuum chamber side, and the conveyor ends of the conveyors inside the main vacuum chamber and the preliminary vacuum chamber are provided close to each other on the side of the space, and the gate opening is formed as the main vacuum chamber. It is formed at the corner where the top and side surfaces of the space on the vacuum chamber side intersect, and the gate seal surface is inclined at an approximately 45 degree angle toward the inside of the gate valve body with respect to the plane perpendicular to the wafer transfer direction. The shaft is formed in a space formed from the preliminary vacuum chamber side of the gate valve body at a position above the main vacuum chamber side space and has a rotation axis parallel to the surface of the wafer to be transferred; Since the shutter on the gate seal surface is opened and closed by rotating the shaft, the transport ends of the conveyor inside the main vacuum chamber and the preliminary vacuum chamber can be brought closer together, making in-line transfer of wafers easy and smooth. can be done. In addition, the only sliding part in the preliminary vacuum chamber is the shaft part, so the number of sliding parts can be reduced compared to the conventional method, so dust generation can be reduced and product yield can be improved. Furthermore, since the manufacturing process is simple and requires only rotating the shutter, maintenance is easy and costs can be reduced as well as maintenance costs.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、室相互間のコンベアー間を近
づけることができてウエーハのインライン移送を
容易ならしめることができる。また、真空室内に
摺動部分が少なくダスト発生の低減が望めること
から製品歩留りの向上につながる。さらに、構造
が単純であることから組立調整、メンテナンスが
容易であり、原価低減および保守費用の低減を図
ることができる。
According to the present invention, the conveyors between the chambers can be brought closer to each other, thereby facilitating in-line transfer of wafers. Additionally, there are fewer sliding parts in the vacuum chamber, which can reduce dust generation, leading to improved product yield. Furthermore, since the structure is simple, assembly, adjustment, and maintenance are easy, and cost and maintenance costs can be reduced.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、従来のゲートバルブ機構の側面断面
図、第2図は、本発明の一実施例のゲートバルブ
機構の側面断面図、第3図は、第2図におけるシ
ヤツター開放時の正面図である。 24……ゲートシール面、25……シヤツタ
ー、30……予備真空室、33……ゲートバルブ
本体、34……主真空室、36……ゲート開孔
部、39……シヤフト、41……ベアリングケー
ス、44……ボールベアリング、45……ロータ
リーアクチユエーター、46……カツプリング、
50……ベアリングケース。
FIG. 1 is a side sectional view of a conventional gate valve mechanism, FIG. 2 is a side sectional view of a gate valve mechanism according to an embodiment of the present invention, and FIG. 3 is a front view of FIG. 2 when the shutter is open. It is. 24...Gate seal surface, 25...Shutter, 30...Preliminary vacuum chamber, 33...Gate valve body, 34...Main vacuum chamber, 36...Gate opening, 39...Shaft, 41...Bearing Case, 44...ball bearing, 45...rotary actuator, 46...coupling,
50...Bearing case.

Claims (1)

【特許請求の範囲】 1 内部に第1の搬送手段を有する一の真空室と
内部に第2の搬送手段を有する他の真空室との間
に設けられたゲートバルブ本体に形成され前記第
1,2の搬送手段間で受け渡されて前記真空室間
で移送されるウエーハが通過するゲート開孔部を
開閉するシヤツターを有するウエーハ移送経路に
おけるゲートバルブ機構において、 移送される前記ウエーハの表面に対応して頂面
を有する空間部を前記ゲートバルブ本体の前記一
の真空室側から形成し、 前記第1の搬送手段の搬送端部を前記空間部の
側面に近接して配設し、 前記第2の搬送手段の搬送端部を前記空間部の
側面と反対側の側面に近接して配設し、 前記ゲート開孔部を前記空間部の頂面と側面と
が交わる角部に形成し、 ゲートシール面を前記ウエーハの移送方向に垂
直な面に対し前記ゲートバルブ本体内に向かつて
傾斜させ前記ゲート開孔部を含み前記角部に形成
し、 シヤフトを移送される前記ウエーハの表面と平
行な回動軸心を有し前記空間部の上方位置で前記
ゲートバルブ本体の前記他の真空室側から形成さ
れた空間部に設け、 前記ゲートシール面の前記シヤツタの一端を他
端の回動軌跡が前記第2の搬送手段の搬送端部に
接触しないように前記シヤフトに設け、 該シヤフトを回動させて前記シヤツターを開閉
する駆動手段を備えたことを特徴とするウエーハ
移送経路におけるゲートバルブ機構。
[Scope of Claims] 1. The first vacuum chamber is formed in a gate valve body provided between one vacuum chamber having a first conveying means therein and another vacuum chamber having a second conveying means therein. , a gate valve mechanism in a wafer transfer path having a shutter for opening and closing a gate opening through which a wafer passed between two transfer means and transferred between the vacuum chambers, a space having a corresponding top surface is formed from the first vacuum chamber side of the gate valve body, a transport end of the first transport means is disposed close to a side surface of the space; A conveying end of the second conveying means is disposed close to a side surface opposite to a side surface of the space, and the gate opening is formed at a corner where a top surface and a side surface of the space intersect. , a gate sealing surface is inclined toward the inside of the gate valve body with respect to a plane perpendicular to the wafer transfer direction, and is formed at the corner including the gate opening, and the surface of the wafer transferred by the shaft is The shutter has parallel rotation axes and is provided in a space formed from the other vacuum chamber side of the gate valve body at a position above the space, and one end of the shutter on the gate seal surface is connected to the other end of the shutter. A gate in a wafer transfer path, characterized in that the gate is provided on the shaft so that a moving trajectory does not come into contact with the transfer end of the second transfer means, and includes a drive means for rotating the shaft to open and close the shutter. Valve mechanism.
JP14494583A 1983-08-10 1983-08-10 Gate valve mechanism in wafer transfer path Granted JPS6037139A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14494583A JPS6037139A (en) 1983-08-10 1983-08-10 Gate valve mechanism in wafer transfer path

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14494583A JPS6037139A (en) 1983-08-10 1983-08-10 Gate valve mechanism in wafer transfer path

Publications (2)

Publication Number Publication Date
JPS6037139A JPS6037139A (en) 1985-02-26
JPH0413424B2 true JPH0413424B2 (en) 1992-03-09

Family

ID=15373837

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14494583A Granted JPS6037139A (en) 1983-08-10 1983-08-10 Gate valve mechanism in wafer transfer path

Country Status (1)

Country Link
JP (1) JPS6037139A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2714839B2 (en) * 1989-01-19 1998-02-16 日本真空技術株式会社 Vacuum valve
JP5113016B2 (en) * 2008-04-07 2013-01-09 東京エレクトロン株式会社 Substrate processing equipment
JP5806827B2 (en) * 2011-03-18 2015-11-10 東京エレクトロン株式会社 Gate valve apparatus, substrate processing apparatus and substrate processing method thereof
JP6412670B1 (en) * 2018-04-13 2018-10-24 株式会社ブイテックス Gate valve

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5526799U (en) * 1978-08-10 1980-02-21

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5848559Y2 (en) * 1981-02-17 1983-11-05 杉山道生 Industrial heating furnace door opening/closing device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5526799U (en) * 1978-08-10 1980-02-21

Also Published As

Publication number Publication date
JPS6037139A (en) 1985-02-26

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