JPH04131893U - Combined discharge type surge absorption element - Google Patents
Combined discharge type surge absorption elementInfo
- Publication number
- JPH04131893U JPH04131893U JP4793891U JP4793891U JPH04131893U JP H04131893 U JPH04131893 U JP H04131893U JP 4793891 U JP4793891 U JP 4793891U JP 4793891 U JP4793891 U JP 4793891U JP H04131893 U JPH04131893 U JP H04131893U
- Authority
- JP
- Japan
- Prior art keywords
- discharge
- conductive thin
- type surge
- insulating substrate
- surge absorbing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010521 absorption reaction Methods 0.000 title description 18
- 239000010409 thin film Substances 0.000 claims abstract description 37
- 239000010408 film Substances 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000002131 composite material Substances 0.000 claims description 19
- 239000007789 gas Substances 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 229910016006 MoSi Inorganic materials 0.000 description 5
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000010891 electric arc Methods 0.000 description 5
- 229910052746 lanthanum Inorganic materials 0.000 description 5
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 5
- 229910021343 molybdenum disilicide Inorganic materials 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000037452 priming Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 239000011195 cermet Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
- Emergency Protection Circuit Devices (AREA)
Abstract
(57)【要約】
【目的】 放電型サージ吸収素子における外径形状の小
型化、特に偏平化を図るとともに複数個の放電型サージ
吸収素子を一体的に収容することで、部品収容スペース
の少ない小型の電子・電気機器内に収容することを可能
とし、その使用用途を拡大する。
【構成】 絶縁基板２上に、微小放電間隙５1，５2を隔
てて対向する対の導電性薄膜４1，４2と、この導電性薄
膜４1，４2と電気的に接続され、共通放電電極膜３と主
放電間隙７1，７2を隔てて対向する対の放電電極膜
６1，６2とを被着形成し、そして上記導電性薄膜４1，
４2の微小放電間隙５1，５2と放電電極膜６1，６2の主
放電間隙７1，７2とを、放電ガスを封入した放電空間を
設けて蓋部材１１により密閉状に被覆する。
(57) [Summary] [Purpose] Miniaturizing the outer diameter of the discharge type surge absorbing element, especially making it flat, and housing multiple discharge type surge absorbing elements in one piece to reduce the space required to accommodate components. This makes it possible to accommodate it in small electronic and electrical equipment, expanding its uses. [Structure] A pair of conductive thin films 4 1 , 4 2 facing each other with a minute discharge gap 5 1 , 5 2 on the insulating substrate 2 , electrically connected to the conductive thin films 4 1 , 4 2 , A common discharge electrode film 3 and a pair of discharge electrode films 6 1 , 6 2 facing each other across the main discharge gaps 7 1 , 7 2 are deposited, and the conductive thin films 4 1 ,
The micro discharge gaps 5 1 , 5 2 of 4 2 and the main discharge gaps 7 1 , 7 2 of the discharge electrode films 6 1 , 6 2 are hermetically covered by a lid member 11 with a discharge space filled with discharge gas. do.
Description
【０００１】0001
本考案は、電話回線等に印加される誘導雷等のサージを吸収して機器が損傷す ることを防止する放電型サージ吸収素子に係り、特に素子を偏平化することでス ペースファクターの向上を図るとともに、複数個の放電型サージ吸収素子を一体 的に収容した複合放電型サージ吸収素子に関する。 This invention absorbs surges such as induced lightning applied to telephone lines, etc., and prevents damage to equipment. Regarding discharge-type surge absorption elements that prevent In addition to improving the pace factor, multiple discharge type surge absorption elements are integrated. The present invention relates to a composite discharge type surge absorbing element that accommodates
【０００２】0002
従来、電子回路に加わる誘導雷等のサージから電子回路を保護するためのサー ジ吸収素子として、電圧非直線特性を有する高抵抗体素子より成るバリスタや、 放電間隙を気密容器に収容したアレスタ等が広く使用されている。 しかし、上記バリスタは、サージ吸収の応答性に優れるものの、単位断面積当 たりの電流耐量が比較的小さく、したがって大きなサージ電流を効率よく吸収す ることが困難であった。また、上記アレスタは、その放電間隙にアーク放電を生 成することにより電流耐量を大きくすることができるのであるが、サージの印加 からアーク放電までに要する時間が上記バリスタと比較して遅く、その応答性に 問題を有していた。 Conventionally, servers have been used to protect electronic circuits from surges such as induced lightning that are applied to electronic circuits. Varistors made of high resistance elements with voltage non-linear characteristics, Arresters and the like in which the discharge gap is housed in an airtight container are widely used. However, although the above varistors have excellent response in surge absorption, The current withstand capacity is relatively small, so it can absorb large surge currents efficiently. It was difficult to In addition, the above arrester generates arc discharge in its discharge gap. However, it is possible to increase the current withstand capacity by Compared to the varistors mentioned above, the time required for arc discharge from I had a problem.
【０００３】 そこで、上記アレスタにおけるサージ吸収の応答性を改善すべく、図３及び図 ４に示す如く、略円柱状の絶縁体２２の表面に導電性薄膜２３を被着させた上で 、この導電性薄膜２３に幅が０．１ｍｍ程度の微小放電間隙２４を周回状に形成 して導電性薄膜２３を分割するとともに、絶縁体２２の両端に主放電間隙２５を 隔てて放電電極２６，２６を嵌着して上記導電性薄膜２３，２３と放電電極２４ ，２４とを接続し、これを放電ガスとともに気密容器２７内に封入して外部端子 ２８，２８を導出したサージ吸収素子２１が提案されている。 この微小放電間隙２４を有するサージ吸収素子２１にサージが印加された場合 、まず微小放電間隙２４を介した導電性薄膜２３，２３間に電位差が生じ、これ により微小放電間隙２４に電子が放出されて沿面放電が発生する。次いで、この 沿面放電に伴って生ずる電子のプライミング効果によってグロー放電へと移行す る。そして、このグロー放電がサージ電流の増加によって主放電間隙２５へと転 移し、アーク放電に移行してサージを吸収するものである。このように、微小放 電間隙２４を有するサージ吸収素子２１は、元来応答速度の速い沿面放電を利用 するものであるため、上記バリスタと比較して略同等の優れた応答性を有すると ともに、電流耐量も大きく優れたものである。0003 Therefore, in order to improve the response of surge absorption in the above arrester, 4, after a conductive thin film 23 is deposited on the surface of a substantially cylindrical insulator 22, , a minute discharge gap 24 with a width of about 0.1 mm is formed in a circumferential manner in this conductive thin film 23. to divide the conductive thin film 23 and create a main discharge gap 25 at both ends of the insulator 22. The conductive thin films 23, 23 and the discharge electrode 24 are fitted with the discharge electrodes 26, 26 separated from each other. , 24 and sealed in an airtight container 27 together with discharge gas to connect external terminals. A surge absorbing element 21 has been proposed in which 28 and 28 are derived. When a surge is applied to the surge absorbing element 21 having this minute discharge gap 24 , first, a potential difference occurs between the conductive thin films 23 and 23 via the minute discharge gap 24, and this As a result, electrons are emitted into the minute discharge gap 24, and creeping discharge occurs. Then this The transition to glow discharge occurs due to the priming effect of electrons that occurs with creeping discharge. Ru. This glow discharge then transfers to the main discharge gap 25 due to the increase in surge current. The surge is then transferred to an arc discharge to absorb the surge. In this way, micro-radiation The surge absorbing element 21 having the electric gap 24 utilizes creeping discharge which originally has a fast response speed. Therefore, it has approximately the same excellent responsiveness as the varistor mentioned above. Both have excellent current resistance.
【０００４】0004
上述した従来のサージ吸収素子２１にあっては、図３に示す如く、気密容器２ ７が略円筒形状を有し、所謂小型電子部品と比較して決して小型とはいえないこ とから、各種電子・電気機器内部に実装する際に比較的大きな専有域を必要とし ていた。 しかしながら、近年の電子・電気機器にあっては、著しく小型・軽量化が図ら れ、これにより電子部品もＩＣ等により小型集積化が推し進められ、したがって 従来のサージ吸収素子にあっても更に小型化が要求されている。 また、各種電子・電気機器内の複数の信号線等を保護するために、１個の信号 線に１個ずつサージ吸収素子を接続することは、サージ吸収素子の専有域が倍数 的に増大することから、更に上記機器の小型化を阻むものであった。 In the conventional surge absorbing element 21 described above, as shown in FIG. 7 has a substantially cylindrical shape and is by no means small compared to so-called small electronic components. Therefore, a relatively large area is required when implementing it inside various electronic and electrical devices. was. However, in recent years, electronic and electrical equipment has become significantly smaller and lighter. As a result, electronic components are becoming more compact and integrated using ICs, etc. Even conventional surge absorbing elements are required to be further miniaturized. In addition, in order to protect multiple signal lines in various electronic and electrical devices, one signal Connecting one surge absorption element to each line means that the exclusive area of the surge absorption element is multiplied. This has further hindered miniaturization of the above-mentioned equipment.
【０００５】 そこで、本考案の複合放電型サージ吸収素子にあっては、外径形状の小型化、 特に偏平化を図るとともに複数個の放電型サージ吸収素子を一体的に収容するこ とで、部品収容スペースの少ない小型の電子・電気機器内に収容することを可能 とし、その使用用途の拡大を実現することを目的とする。[0005] Therefore, the composite discharge type surge absorbing element of the present invention has a smaller outer diameter shape, In particular, it is possible to flatten the device and accommodate multiple discharge-type surge absorbing elements integrally. This allows it to be housed in small electronic and electrical equipment that requires little space to accommodate components. The purpose is to realize the expansion of its usage.
【０００６】[0006]
上述した目的を達成すべく、本考案の複合放電型サージ吸収素子は、放電ガス を封入した放電空間を設けて蓋部材により密閉状に被覆される絶縁基板上に、微 小放電間隙を隔てて対向する対の導電性薄膜と、該導電性薄膜と電気的に接続さ れ、主放電間隙を隔てて対向する対の放電電極膜とからなる素子を複数個並列接 続して被着形成したことを特徴とするものである。 また、絶縁基板に被着形成した導電性薄膜において、その抵抗値を、連続した 過電流が流れたときに上記絶縁基板が熱歪みにより砕裂し得る発熱量を生じる抵 抗値としてもよいものである。 In order to achieve the above-mentioned purpose, the composite discharge type surge absorption element of the present invention utilizes discharge gas A small discharge space is provided on an insulating substrate that is hermetically covered with a lid member. A pair of conductive thin films facing each other across a small discharge gap, and electrically connected to the conductive thin films. A plurality of elements each consisting of a pair of discharge electrode films facing each other across a main discharge gap are connected in parallel. It is characterized in that it is then deposited and formed. In addition, in a conductive thin film formed on an insulating substrate, its resistance value is A resistor that generates heat that can cause the insulating substrate to shatter due to thermal strain when an overcurrent flows. It can also be used as a resistance value.
【０００７】[0007]
放電ガスを封入した放電空間を設けて蓋部材により密閉状に被覆される絶縁基 板表面に、微小放電間隙を隔てて対向する導電性薄膜と、この導電性薄膜と電気 的に接続されるとともに主放電間隙を隔てて対向する放電電極膜とからなる素子 を被着形成することにより、放電型サージ吸収素子の形状は偏平化し、小型化す ることが容易となる。 そして、導電性薄膜と放電電極膜とからなる素子を複数個並列接続したことに より、この素子数と同数の複数の回路を１個の小型な複合放電型サージ吸収素子 で保護することができる。これにより、複数個の放電型サージ吸収素子を必要と する場合の専有域を更に減少させることができる。 また、導電性薄膜の抵抗値を、連続した過電流が流れたときに絶縁基板が熱歪 みにより砕裂し得る発熱量を生ずる抵抗値とすれば、サージ吸収素子の定格を上 回る連続した過電流が導電性薄膜を流れた場合、絶縁基板が砕裂して放電空間内 の放電ガスに空気が流入し、これにより放電が消失して過電流を遮断することと なり、放電型サージ吸収素子が焼損する如き事故の発生する虞れがなくなる。 An insulating base that has a discharge space filled with discharge gas and is hermetically covered by a lid member. On the surface of the plate, there is a conductive thin film facing each other with a small discharge gap in between, and this conductive thin film and electricity A device consisting of discharge electrode films that are connected to each other and face each other across a main discharge gap. The shape of the discharge-type surge absorbing element can be made flat and smaller by depositing This makes it easier to Then, by connecting multiple elements in parallel, each consisting of a conductive thin film and a discharge electrode film. Therefore, the same number of circuits as this number of elements can be combined into one small composite discharge type surge absorption element. can be protected by This eliminates the need for multiple discharge-type surge absorption elements. In this case, the exclusive area can be further reduced. In addition, the resistance value of the conductive thin film can be changed by thermal distortion of the insulating substrate when a continuous overcurrent flows. If the resistance value is such that the amount of heat generated can be shattered by If a continuous overcurrent flows through the conductive thin film, the insulating substrate will shatter and the inside of the discharge space will be destroyed. Air flows into the discharge gas, causing the discharge to disappear and interrupting the overcurrent. Therefore, there is no possibility of an accident such as burnout of the discharge type surge absorbing element.
【０００８】[0008]
図１は、本考案の複合放電型サージ吸収素子の一実施例を示す分解斜視図であ る。 図中１は、本考案の複合放電型サージ吸収素子、２は０．４〜１．０ｍｍの厚 さのセラミック等からなる絶縁基板、３は絶縁基板２の略中央部分に被着して形 成したモリブデン（Ｍｏ）、タングステン（Ｗ）、六硼化ランタン（ＬａＢ6） 、二ケイ化モリブデン（ＭｏＳｉ2）、二酸化チタン（ＴｉＯ2）等の耐スパッタ 性を有する導電物質からなる共通放電電極膜、４1，４2はこの共通放電電極膜３ とそれぞれ幅１０〜２００μｍの微小放電間隙５1，５2を隔て、ルテニウム（Ｒ ｕ）系ペーストを被着して形成された５〜１００Ωの抵抗値を有するサーメット 抵抗等の導電性薄膜、６1，６2は導電性薄膜４1，４2のそれぞれの端部と電気的 に接続するとともに、上記共通放電電極膜３と０．４〜３．０ｍｍ程度の主放電 間隙７1，７2を隔てて対向し、モリブデン（Ｍｏ）、タングステン（Ｗ）、六硼 化ランタン（ＬａＢ6）、二ケイ化モリブデン（ＭｏＳｉ2）、二酸化チタン（Ｔ ｉＯ2）等の耐スパッタ性を有する導電物質からなる放電電極膜、８1，８2，８3 は上記共通放電電極膜３及び導電性薄膜４1，４2と放電電極膜６1，６2とに電気 的に接続して絶縁基板２の端縁に被着形成された銀−パラジウム（Ａｇ−Ｐｄ） やニッケル（Ｎｉ）等からなる外部端子接続被膜、９，９，９は上記外部端子接 続被膜８1，８2，８3の一端にハンダ付け等により接続される外部端子、１０は 上記導電性薄膜４1，４2の露出部分を被覆することで、この露出部分における沿 面放電を防止するための非結晶化ガラス等からなる保護膜、１１は四方に鍔縁１ １ａを形成し、絶縁基板２表面を低融点ガラス等の封着部材を用いて密閉状に覆 うガラス、セラミック等の絶縁物質（本実施例にあってはガラス）からなる蓋部 材である。FIG. 1 is an exploded perspective view showing an embodiment of the composite discharge type surge absorbing element of the present invention. In the figure, 1 is the composite discharge type surge absorbing element of the present invention, 2 is an insulating substrate made of ceramic or the like with a thickness of 0.4 to 1.0 mm, and 3 is formed by adhering it to the approximate center of the insulating substrate 2. A common discharge electrode film made of a conductive material having sputtering resistance such as molybdenum (Mo), tungsten (W), lanthanum hexaboride (LaB 6 ), molybdenum disilicide (MoSi 2 ), and titanium dioxide (TiO 2 ). , 4 1 , 4 2 are separated from this common discharge electrode film 3 by micro discharge gaps 5 1 , 5 2 each having a width of 10 to 200 μm, and are formed by coating a ruthenium (Ru) paste. The conductive thin films 6 1 , 6 2 such as cermet resistors having a resistance value are electrically connected to the respective ends of the conductive thin films 4 1 , 4 2 , and are connected to the common discharge electrode film 3 by 0.4 to 0.4. Molybdenum (Mo), tungsten ( W ), lanthanum hexaboride (LaB 6 ) , molybdenum disilicide (MoSi 2 ), titanium dioxide ( The discharge electrode films 8 1 , 8 2 , 8 3 are made of a conductive substance having sputtering resistance such as TiO 2 ), and the common discharge electrode film 3 and the conductive thin films 4 1 , 4 2 and the discharge electrode film 6 1 , 6 External terminal connection coating made of silver-palladium (Ag-Pd), nickel (Ni), etc., formed on the edge of the insulating substrate 2 in electrical connection with 2, 9, 9, 9 is the above-mentioned The external terminal 10 is connected to one end of the external terminal connecting film 8 1 , 8 2 , 8 3 by soldering or the like, and by covering the exposed portion of the conductive thin film 4 1 , 4 2 , the creepage of the exposed portion is reduced. A protective film 11 made of non-crystallized glass or the like for preventing electric discharge; 11 is glass that forms flanges 11a on all sides, and seals the surface of the insulating substrate 2 using a sealing member such as low-melting glass; The lid member is made of an insulating material such as ceramic (glass in this embodiment).
【０００９】 上記蓋部材１１は、３〜１０ｍｍ程度の高さを有し、導電性薄膜４1，４2間の 微小放電間隙５1，５2と放電電極膜６1，６2間の主放電間隙７1，７2とを被覆す るとともに、鍔縁１１ａを絶縁基板２表面に封着することにより蓋部材１１の内 方に放電空間を形成している。そして、この放電空間にヘリウム（Ｈｅ）、ネオ ン（Ｎｅ）、アルゴン（Ａｒ）、キセノン（Ｘｅ）等の希ガスの単体もしくは混 合物を主体とする放電ガスを封入している。尚、上記蓋部材１１は平板状のもの でもよく、この場合には、絶縁基板２との間にスペーサ等を配して放電空間を形 成すればよい。The lid member 11 has a height of about 3 to 10 mm, and has a height of about 3 to 10 mm, and has a height between the small discharge gaps 5 1 and 5 2 between the conductive thin films 4 1 and 4 2 and the main gap between the discharge electrode films 6 1 and 6 2 . A discharge space is formed inside the lid member 11 by covering the discharge gaps 7 1 and 7 2 and sealing the flange 11 a to the surface of the insulating substrate 2 . This discharge space is filled with a discharge gas mainly consisting of a single substance or a mixture of rare gases such as helium (He), neon (Ne), argon (Ar), and xenon (Xe). Note that the lid member 11 may be in the form of a flat plate, and in this case, a spacer or the like may be placed between it and the insulating substrate 2 to form a discharge space.
【００１０】 また、上記共通放電電極膜３と対向する導電性薄膜４1，４2の先端部分には、 放電電極膜６1，６2と同様のモリブデン（Ｍｏ）、タングステン（Ｗ）、六硼化 ランタン（ＬａＢ6）、二ケイ化モリブデン（ＭｏＳｉ2）、二酸化チタン（Ｔｉ Ｏ2）等の耐スパッタ性を有する導電物質１２，１２を被着形成している。これ により、導電性薄膜４1，４2のスパッタによる微小放電間隙５1，５2の絶縁劣化 を防止し、寿命特性の向上を図っている。[0010]Moreover, the tip portions of the conductive thin films 4 1 and 4 2 facing the common discharge electrode film 3 are coated with molybdenum (Mo), tungsten (W), and Conductive materials 12, 12 having sputtering resistance such as lanthanum boride (LaB 6 ), molybdenum disilicide (MoSi 2 ), and titanium dioxide (TiO 2 ) are deposited. This prevents insulation deterioration of the minute discharge gaps 5 1 , 5 2 due to sputtering of the conductive thin films 4 1 , 4 2 , and improves life characteristics.
【００１１】 然して、上述した如き構成からなる複合放電型サージ吸収素子１を機器のプリ ント回路基板等に実装した状態で、外部から外部端子９，９，９を介して誘導雷 等のサージが印加されると、まず微小放電間隙５1，５2を介した導電物質１２， １２と共通放電電極膜３との間に電位差が生じ、これにより微小放電間隙５1， ５2に電子が放出されて沿面放電が発生する。次いで、この沿面放電は、放電に 伴って生ずる電子のプライミング効果によってグロー放電へと移行する。そして 、このグロー放電がサージ電流の増加によって主放電間隙７1，７2へと転移し、 更にアーク放電に移行してサージを吸収するものである。[0011]However, when the composite discharge type surge absorbing element 1 having the above-described configuration is mounted on a printed circuit board or the like of a device, a surge such as induced lightning is applied from the outside via the external terminals 9, 9, 9. When this occurs, a potential difference is first generated between the conductive materials 12 , 12 and the common discharge electrode film 3 via the minute discharge gaps 51, 52 , and as a result, electrons are emitted into the minute discharge gaps 51 , 52. creeping discharge occurs. Next, this creeping discharge shifts to a glow discharge due to the priming effect of electrons that occurs with the discharge. This glow discharge then transfers to the main discharge gaps 7 1 and 7 2 due to an increase in surge current, and further transfers to arc discharge to absorb the surge.
【００１２】 図２は、本考案の複合放電型サージ吸収素子１の他の実施例を示す概略斜視図 である。 図中１は、本考案の複合放電型サージ吸収素子であり、２は０．４〜１．０ｍ ｍの厚さのセラミック等からなる長方形状の絶縁基板、４1ａ，４1ｂ，４2ａ， ４2ｂ，４3ａ，４3ｂ・・・４ｎａ，４ｎｂ（ｎは任意の整数）は、４ｍａ，４ ｍｂ（ｍは１からｎの間の任意の整数）同士においてそれぞれ幅１０〜２００μ ｍの微小放電間隙５1，５2，５3・・・５ｎを隔てて、ルテニウム（Ｒｕ）系ペ ーストを被着して形成された５〜１００Ωの抵抗値を有するサーメット抵抗等の 導電性薄膜、６1ａ，６1ｂ，６2ａ，６2ｂ，６3ａ，６3ｂ，・・・６ｎａ，６ｎ ｂは、上記導電性薄膜４ｍａ，４ｍｂに対応してそれぞれの端部と電気的に接続 するとともに、６ｍａ，６ｍｂ同士で０．４〜３．０ｍｍ程度の主放電間隙７1 ，７2，７3・・・７ｎを隔てて対向し、モリブデン（Ｍｏ）、タングステン（Ｗ ）、六硼化ランタン（ＬａＢ6）、二ケイ化モリブデン（ＭｏＳｉ2）、二酸化チ タン（ＴｉＯ2）等の耐スパッタ性を有する導電物質からなる放電電極膜、８1， ８2，８3・・・８ｎは上記導電性薄膜４1ａ，４2ａ，４3ａ，・・・４ｎａ及び 放電電極膜６1ａ，６2ａ，６3ａ，・・・６ｎａとそれぞれ電気的に接続して絶 縁基板２の一方の端縁に被着形成された銀−パラジウム（Ａｇ−Ｐｄ）やニッケ ル（Ｎｉ）等からなる外部端子接続被膜、１３は上記導電性薄膜４1ｂ，４2ｂ， ４3ｂ・・・４ｎｂ及び放電電極膜６1ｂ，６2ｂ，６3ｂ，・・・６ｎｂを共通接 続して絶縁基板２の他方の端縁に被着形成された銀−パラジウム（Ａｇ−Ｐｄ） やニッケル（Ｎｉ）等からなる共通外部端子接続被膜である。また、上記共通放 電電極膜３と対向する導電性薄膜４1，４2の先端部分には、放電電極膜６1，６2 と同様のモリブデン（Ｍｏ）、タングステン（Ｗ）、六硼化ランタン（ＬａＢ6 ）、二ケイ化モリブデン（ＭｏＳｉ2）、二酸化チタン（ＴｉＯ2）等の耐スパッ タ性を有する導電物質１２，１２を被着形成している。尚、蓋部材及び蓋部材が 形成する放電空間及び放電空間に封入する放電ガスについては、上述した実施例 と同様であるので説明は省略する。FIG. 2 is a schematic perspective view showing another embodiment of the composite discharge type surge absorbing element 1 of the present invention. In the figure, 1 is a composite discharge type surge absorbing element of the present invention, 2 is a rectangular insulating substrate made of ceramic or the like with a thickness of 0.4 to 1.0 mm, 4 1 a, 4 1 b, 4 2 a, 4 2 b, 4 3 a, 4 3 b...4na, 4nb (n is any integer) have the width of 4ma, 4 mb (m is any integer between 1 and n), respectively. A cermet resistor or the like having a resistance value of 5 to 100 Ω is formed by depositing a ruthenium (Ru) paste across micro discharge gaps 5 1 , 5 2 , 5 3 . . . 5 n of 10 to 200 μm. The conductive thin films 6 1 a, 6 1 b, 6 2 a, 6 2 b, 6 3 a, 6 3 b, ... 6na, 6n b correspond to the above conductive thin films 4ma and 4mb, respectively. In addition to being electrically connected to the end portions, the 6ma and 6mb are opposed to each other with main discharge gaps 7 1 , 7 2 , 7 3 . . . 7n of about 0.4 to 3.0 mm in between, Discharge electrode film made of a conductive material having sputtering resistance such as tungsten (W), lanthanum hexaboride (LaB 6 ), molybdenum disilicide (MoSi 2 ), titanium dioxide (TiO 2 ), etc., 8 1 , 8 2 , 8 3 . . . 8n are electrically connected to the conductive thin films 4 1 a, 4 2 a, 4 3 a, . . . 4na and the discharge electrode films 6 1 a, 6 2 a, 6 3 a, . 13 is the conductive thin film 4 1 b; 4 2 b, 4 3 b...4nb and the discharge electrode films 6 1 b, 6 2 b, 6 3 b, . . . 6nb were commonly connected and deposited on the other edge of the insulating substrate 2. This is a common external terminal connection film made of silver-palladium (Ag-Pd), nickel (Ni), etc. In addition, the tip portions of the conductive thin films 4 1 and 4 2 facing the common discharge electrode film 3 are filled with molybdenum (Mo), tungsten (W), and lanthanum hexaboride similar to those of the discharge electrode films 6 1 and 6 2 . Conductive materials 12, 12 having sputtering resistance such as (LaB 6 ), molybdenum disilicide (MoSi 2 ), and titanium dioxide (TiO 2 ) are deposited. It should be noted that the lid member, the discharge space formed by the lid member, and the discharge gas sealed in the discharge space are the same as those in the above-mentioned embodiment, so a description thereof will be omitted.
【００１３】 このような構成からなる複合放電型サージ吸収素子１を機器に実装し、外部か ら任意の外部端子接続被膜８ｍに対し誘導雷等のサージが印加されると、まず微 小放電間隙５ｍを介した導電物質１２，１２間に電位差が生じ、これにより微小 放電間隙５ｍに電子が放出されて沿面放電が発生する。次いで、この沿面放電は 、放電に伴って生ずる電子のプライミング効果によってグロー放電へと移行する 。そして、このグロー放電がサージ電流の増加によって主放電間隙７ｍへと転移 し、更にアーク放電に移行してサージを吸収するものである。[0013] The composite discharge type surge absorbing element 1 having such a configuration is mounted on a device, and the external When a surge such as induced lightning is applied to any external terminal connection coating 8m from the A potential difference occurs between the conductive materials 12 and 12 through a small discharge gap of 5 m, which causes a minute Electrons are emitted into a discharge gap of 5 m, and a creeping discharge occurs. Then, this creeping discharge is , transitions to glow discharge due to the priming effect of electrons that occurs with discharge. . This glow discharge then transferred to the main discharge gap of 7m due to the increase in surge current. However, it further absorbs the surge by transitioning to arc discharge.
【００１４】 また、本考案の複合放電型サージ吸収素子１において、電力線との接触事故や このような事態を想定した過電圧試験によって、放電型サージ吸収素子の定格を 上回る連続した過電圧が印加された場合には、微小放電間隙５における放電は主 放電間隙７に転移せず、微小放電間隙５または微小放電間隙５および主放電間隙 ７で放電が持続し、この放電を通じて連続した過電流が流れることとなる。そし て、このような短絡状態となった場合には、導電性薄膜４がその抵抗値によって 発熱し、絶縁基板２に熱歪みが生じて砕裂し、これにより放電空間内の放電ガス に空気が流入して放電を消失させ、その結果過電流を遮断するものである。更に 、導電性薄膜４の発熱により絶縁基板２を砕裂し易くするために、絶縁基板２に 溝等を形成する構成としたり、外部端子９を絶縁基板２の裏面方向へ突出させて 回路基板等から浮いた状態で実装されるようにしたりしてもよい。[0014] In addition, in the composite discharge type surge absorbing element 1 of the present invention, it is possible to prevent contact accidents with power lines. Through overvoltage testing assuming such a situation, the rating of the discharge type surge absorption element was determined. If a continuous overvoltage exceeding the Without transferring to the discharge gap 7, the micro discharge gap 5 or the micro discharge gap 5 and the main discharge gap 7, the discharge continues, and a continuous overcurrent flows through this discharge. stop Therefore, if such a short circuit occurs, the conductive thin film 4 will be damaged due to its resistance value. Heat is generated, thermal distortion occurs in the insulating substrate 2, and it fractures, causing the discharge gas in the discharge space to Air flows in to eliminate the discharge, thereby interrupting the overcurrent. Furthermore , in order to make the insulating substrate 2 easier to shatter due to the heat generated by the conductive thin film 4. A structure may be adopted in which a groove or the like is formed, or the external terminal 9 may be made to protrude toward the back surface of the insulating substrate 2. It may also be mounted in a floating state from a circuit board or the like.
【００１５】[0015]
以上詳述した如く、本考案の複合放電型サージ吸収素子によれば、放電ガスを 封入した放電空間を設けて蓋部材により密閉状に被覆される絶縁基板表面に、微 小放電間隙を隔てて対向する導電性薄膜と、この導電性薄膜と導通し主放電間隙 を隔てて対向する放電電極膜とを被着形成することで、上記構成の放電型サージ 吸収素子の形状は偏平化して小型化するとともに複数個の放電型サージ吸収素子 を一体的に収容することが容易となり、したがって部品収容スペースの少ない小 型の機器内に極めて効率良く収容することが可能になる等、放電型サージ吸収素 子の使用用途を拡大し、その利用価値を高めるものである。 As detailed above, according to the composite discharge type surge absorbing element of the present invention, the discharge gas is A small discharge space is provided on the surface of the insulating substrate, which is hermetically covered by the lid member. A conductive thin film facing each other across a small discharge gap, and a main discharge gap that is electrically connected to this conductive thin film. By depositing the discharge electrode films facing each other across the discharge type surge The shape of the absorption element has become flattened and smaller, and multiple discharge-type surge absorption elements have been This makes it easier to store the parts in one piece, making it easier to store them in a small space with less space for parts. Discharge-type surge absorbers can be housed extremely efficiently inside type equipment. This expands the uses of children and increases their utility value.
【００１６】 また、本考案の複合放電型サージ吸収素子において、導電性薄膜の抵抗値を、 連続した過電流が流れたときに絶縁基板が熱歪みにより砕裂し得る発熱量を生ず る抵抗値とすれば、電力線との接触事故やこのような事態を想定した過電圧試験 によって、放電型サージ吸収素子の定格を上回る連続する過電流が流れた場合に 、導電性薄膜の多大な発熱により絶縁基板を砕裂して放電ガスに空気を流入させ ることで放電を消失させ、その結果過電流を遮断して複合放電型サージ吸収素子 による焼損事故を防止し、ひいては安全性に優れた複合放電型サージ吸収素子を 実現することができるものである。[0016] In addition, in the composite discharge type surge absorbing element of the present invention, the resistance value of the conductive thin film is When continuous overcurrent flows, the insulating substrate generates heat that can cause it to shatter due to thermal distortion. If the resistance value is set to 1, it is possible to conduct an overvoltage test assuming a contact accident with a power line or such a situation. When a continuous overcurrent exceeding the rating of the discharge type surge absorption element flows, , the large amount of heat generated by the conductive thin film shatters the insulating substrate and allows air to flow into the discharge gas. This causes the discharge to disappear, and as a result, the overcurrent is cut off, resulting in a composite discharge type surge absorption element. We have developed a composite discharge type surge absorbing element that prevents burnout accidents due to It is something that can be realized.
【図１】本考案の複合放電型サージ吸収素子の一実施例
を示す分解斜視図である。FIG. 1 is an exploded perspective view showing an embodiment of a composite discharge type surge absorbing element of the present invention.
【図２】本考案の複合放電型サージ吸収素子の他の実施
例を示す概略斜視図である。FIG. 2 is a schematic perspective view showing another embodiment of the composite discharge type surge absorbing element of the present invention.
【図３】従来のサージ吸収素子の概略斜視図である。FIG. 3 is a schematic perspective view of a conventional surge absorption element.
【図４】従来のサージ吸収素子の概略断面図である。FIG. 4 is a schematic cross-sectional view of a conventional surge absorption element.
１ 複合放電型サージ吸収素子 ２ 絶縁基板 ４ 導電性薄膜 ５ 微小放電間隙 ６ 放電電極膜 ７ 主放電間隙 １１ 蓋部材 1 Combined discharge type surge absorption element 2 Insulating substrate 4 Conductive thin film 5 Micro discharge gap 6 Discharge electrode film 7 Main discharge gap 11 Lid member
Claims (2)
部材により密閉状に被覆される絶縁基板上に、微小放電
間隙を隔てて対向する対の導電性薄膜と、該導電性薄膜
と電気的に接続され、主放電間隙を隔てて対向する対の
放電電極膜とからなる素子を複数個並列接続して被着形
成したことを特徴とする複合放電型サージ吸収素子。1. A pair of conductive thin films facing each other with a minute discharge gap interposed therebetween, on an insulating substrate which is provided with a discharge space filled with discharge gas and hermetically covered with a lid member; 1. A composite discharge type surge absorbing element, characterized in that a plurality of elements each consisting of a pair of discharge electrode films facing each other across a main discharge gap are connected in parallel and adhered to each other.
は、連続した過電流が流れたときに上記絶縁基板が熱歪
みにより砕裂し得る発熱量を生ずる抵抗値を有すること
を特徴とする請求項１記載の複合放電型サージ吸収素
子。2. The conductive thin film formed on the insulating substrate has a resistance value that generates a heat amount that can cause the insulating substrate to fracture due to thermal strain when a continuous overcurrent flows. The composite discharge type surge absorbing element according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4793891U JPH04131893U (en) | 1991-05-28 | 1991-05-28 | Combined discharge type surge absorption element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4793891U JPH04131893U (en) | 1991-05-28 | 1991-05-28 | Combined discharge type surge absorption element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04131893U true JPH04131893U (en) | 1992-12-04 |
Family
ID=31926775
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4793891U Pending JPH04131893U (en) | 1991-05-28 | 1991-05-28 | Combined discharge type surge absorption element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04131893U (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61227387A (en) * | 1985-04-01 | 1986-10-09 | 興亜電工株式会社 | Surge absorption element and manufacture thereof |
| JPS62278781A (en) * | 1986-05-27 | 1987-12-03 | 三菱マテリアル株式会社 | Multi-pole micro-gap type surge absorber |
| JPS6410592A (en) * | 1987-07-01 | 1989-01-13 | Okaya Electric Industry Co | Chip type surge absorbing element |
| JPH04218288A (en) * | 1990-12-18 | 1992-08-07 | Okaya Electric Ind Co Ltd | Discharge type surge absorbing element |
| JPH04277479A (en) * | 1991-03-05 | 1992-10-02 | Mitsubishi Electric Corp | Lightning arrester |
-
1991
- 1991-05-28 JP JP4793891U patent/JPH04131893U/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61227387A (en) * | 1985-04-01 | 1986-10-09 | 興亜電工株式会社 | Surge absorption element and manufacture thereof |
| JPS62278781A (en) * | 1986-05-27 | 1987-12-03 | 三菱マテリアル株式会社 | Multi-pole micro-gap type surge absorber |
| JPS6410592A (en) * | 1987-07-01 | 1989-01-13 | Okaya Electric Industry Co | Chip type surge absorbing element |
| JPH04218288A (en) * | 1990-12-18 | 1992-08-07 | Okaya Electric Ind Co Ltd | Discharge type surge absorbing element |
| JPH04277479A (en) * | 1991-03-05 | 1992-10-02 | Mitsubishi Electric Corp | Lightning arrester |
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