JPH0412543A - Gold wire for bump electrodes - Google Patents
Gold wire for bump electrodesInfo
- Publication number
- JPH0412543A JPH0412543A JP2116036A JP11603690A JPH0412543A JP H0412543 A JPH0412543 A JP H0412543A JP 2116036 A JP2116036 A JP 2116036A JP 11603690 A JP11603690 A JP 11603690A JP H0412543 A JPH0412543 A JP H0412543A
- Authority
- JP
- Japan
- Prior art keywords
- ppm
- weight
- ball
- wire
- gold wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 title claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000005336 cracking Methods 0.000 description 7
- 238000001953 recrystallisation Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005491 wire drawing Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01039—Yttrium [Y]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明はワイヤレスボンディング法、特にフリラフチッ
プボンディング法又はテープキャリアボンディング法に
より半導体チップを基盤にボンディングする際のバンプ
電極用金線に関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a gold wire for bump electrodes when bonding a semiconductor chip to a substrate by a wireless bonding method, particularly a frill-lough chip bonding method or a tape carrier bonding method.
〈従来の技術〉
従来、この種のバンプ電極用金線として例えば特開昭６
３−３０１５３５号公報に開示される如くキャピラリー
の先端から垂下したワイヤの先端を加熱してボールが形
成され、このボール形成時に熱影響を受けて再結晶する
ボールの根元部の弓張り強度が、熱影響を受けない他の
部分の引張り強度に比べ減少し、その後キャピラリーが
下降して該ボールを基盤の配線の上面又は半導体素子の
上面に接着させた状態で、キャピラリーが上昇してワイ
ヤを引張ることにより上記ボールの根元部、即ち再結晶
範囲のどこかで破断して配線の上面又は半導体素子の上
面にバンプ電極を形成せしめるものがある。<Prior art> Conventionally, as a gold wire for this type of bump electrode, for example, Japanese Patent Application Laid-open No. 6
As disclosed in Japanese Patent No. 3-301535, a ball is formed by heating the tip of a wire hanging from the tip of a capillary, and the bowing strength of the base of the ball, which recrystallizes under the influence of heat during ball formation, is The tensile strength decreases compared to other parts that are not affected by heat, and then the capillary descends to adhere the ball to the top surface of the wiring on the substrate or the top surface of the semiconductor element, and then the capillary rises to pull the wire. As a result, some balls break at the base of the ball, that is, somewhere in the recrystallization range, forming a bump electrode on the upper surface of the wiring or the upper surface of the semiconductor element.
〈発明が解決しようとする課題〉
しかし乍ら、このような従来のバンプ電極用金線におい
て添加元素の種別及びその含有率の範囲ではボール形成
時に熱影響を受けて再結晶する範囲が比較的に長いため
、破断する位置にバラツキが多いと共にボールに残るテ
ィル量が長く、安定したバンプ電極を形成できないとい
う問題がある。<Problems to be Solved by the Invention> However, in such conventional gold wires for bump electrodes, the range of recrystallization due to the influence of heat during ball formation is relatively small, depending on the types of additive elements and their content rates. Since the ball is long, there are many variations in the breakage position, and the amount of till remaining on the ball is long, making it impossible to form a stable bump electrode.
本発明は斯る従来事情に鑑み、破断位置を一定にしてボ
ールのティル残り量を短くしながら加工性の低下及びチ
ップ割れを防止することを目的とする。SUMMARY OF THE INVENTION In view of the conventional circumstances, it is an object of the present invention to prevent deterioration in workability and chip cracking while keeping the fracture position constant and shortening the remaining amount of ball till.
〈課題を解決するための手段〉
上記課題を解決するために本発明が講する技術的手段は
、ワイヤが高純度ＡｕにＣａを５〜１００重量ｐｐｍと
、Ｙを１００〜５００重量ｐｐｍと、Ｇｅを３０〜１０
０重量ｐｐｍかＢｅを５〜１５重量ｐｐｍの１種又は２
種とを含有させて形成したことを特徴とするものである
。<Means for Solving the Problems> The technical means taken by the present invention to solve the above problems is that the wire is made of high-purity Au containing 5 to 100 ppm by weight of Ca and 100 to 500 ppm by weight of Y. Ge from 30 to 10
One or two types of 0 ppm by weight or 5 to 15 ppm by weight of Be
It is characterized by being formed by containing seeds.
〈作用〉
上記バンプ電極用金線における各成分の限定理由につい
て述べる。<Function> The reason for limiting each component in the gold wire for bump electrodes will be described.
Ｃａはボール形成時の再結晶温度を高める作用があるの
で再結晶範囲を短くするが、その含有量が５重量ｐｐｍ
未満では特性を満足することかできず、一方１００重量
ｐｐｍ以上では金線の脆化現象か見られて伸線加工が難
しくなると共に熱処理性が悪く、しかもボール形成時に
ボールが硬くなり過ぎてボンディングの際にチップ割れ
の原因となる。Ca has the effect of increasing the recrystallization temperature during ball formation, so it shortens the recrystallization range, but the content is 5 ppm by weight.
If it is less than 100 ppm by weight, the properties cannot be satisfied, while if it is more than 100 ppm by weight, embrittlement of the gold wire can be seen, making wire drawing difficult and having poor heat treatability.Moreover, the ball becomes too hard during ball formation, making it difficult to bond. This may cause chip cracking.
Ｙはボール形成時の再結晶範囲を短くする作用かあるが
、その含有量が１００重量ｐｐｍ未満では特性を満足す
ることができず、一方５００重量ｐｐｍ以上では金線の
脆化現象が見られて伸線加工が難しくなると共に熱処理
性が悪＜、シかもボール形成時にボールが硬くなり過ぎ
てチップ割れの原因となる。Y has the effect of shortening the recrystallization range during ball formation, but if the content is less than 100 ppm by weight, the properties cannot be satisfied, while if it is more than 500 ppm by weight, embrittlement of the gold wire is observed. This makes wire drawing difficult, and the heat treatability is poor, and the ball becomes too hard during ball formation, causing chip cracking.
Ｇｅは加工性を高める作用があるが、その含有量が３０
重量ｐｐｍ未満では特性を満足することができず、一方
１００重量ｐｐｍ以上ではチップ割れの原因となる。Ge has the effect of increasing workability, but its content is 30
If it is less than ppm by weight, the characteristics cannot be satisfied, while if it is more than 100 ppm by weight, it may cause chip cracking.
Ｂｅは加工性を高める作用があるが、その含有量が５重
量ｐｐｍ未満では特性を満足することができず、一方１
５重量ｐｐｍ以上では金線の脆化現象が見られて伸線加
工が難しくなると共にチップ割れの原因となる。Be has the effect of increasing processability, but if the content is less than 5 ppm by weight, the properties cannot be satisfied;
If the content exceeds 5 ppm by weight, the gold wire becomes brittle, making wire drawing difficult and causing chip cracking.
そして、不可避不純物を含む純度９９．９９％以上のＡ
ｕにＣａを５〜１００重量ｐｐｍとＹを１００〜５００
重量ｐｐｍ添加することによって、再結晶範囲が短くな
り、これにＧｅを３０〜１００重量ｐｐｍかＢｅを５〜
１５重量ｐｐｍかこれら両者を複合添加することによっ
て、伸線加工が容易になると共にボールが硬くなり過ぎ
ないものである。and A with a purity of 99.99% or more containing unavoidable impurities.
5 to 100 ppm by weight of Ca and 100 to 500 of Y to u
By adding ppm by weight, the recrystallization range becomes shorter, and by adding 30 to 100 ppm by weight of Ge or 5 to 5 to 100 ppm by weight of Be.
By adding 15 ppm by weight or a combination of both, wire drawing becomes easy and the ball does not become too hard.
〈実施例〉 以下、具体的な実施例について説明する。<Example> Specific examples will be described below.
各試料は高純度Ａｕ （９９，９９９％）にＣａ。Each sample contains high purity Au (99,999%) and Ca.
Ｙ、Ｇｅ、Ｂｅを添加して溶解鋳造し、次に溝ロール加
工を施し、その途中で焼なまし処理を施した後に線引加
工で２５μφの極細金線に成形したものである。Y, Ge, and Be were added and melted and cast, followed by groove roll processing, annealing treatment during the process, and wire drawing to form an ultrafine gold wire of 25 μφ.
各試料の元素含有量は表（１）に示す通りであり、その
試料ＮＯ６１〜１２０は本発明の実施品、試料Ｎｏ、１
２１，１２２は本発明の組成範囲にない比較界である。The element content of each sample is as shown in Table (1), and the samples No. 61 to 120 are the implementation products of the present invention, sample No. 1
21 and 122 are comparative fields that are not within the composition range of the present invention.
表（１） 上記試料によって機械的特性、熱影響範囲長さ。Table (1) Mechanical properties and heat affected range length depending on the above sample.
ボール根元部での切断性、加工性の良否及びチップ割れ
の有無を測定した結果を次表（２）に示す。The following Table (2) shows the results of measuring the cuttability, workability, and presence or absence of chip cracking at the base of the ball.
この測定結果により本発明の組成は前述した範囲で最適
であることが理解され、高純度ＡｕにＣａを５０〜１０
０重量ｐｐｍとＹを２５０〜１０００重量ｐｐｍを添加
すれば熱影響範囲長さが５０〜６０μｍとなる。From this measurement result, it is understood that the composition of the present invention is optimal within the above-mentioned range.
If 0 weight ppm and Y are added at 250 to 1000 weight ppm, the length of the heat affected zone will be 50 to 60 μm.
尚、本発明の特性に影響を与えない範囲で他の元素、例
えばランタン系の希土類元素やＳｂ。In addition, other elements such as lanthanum-based rare earth elements and Sb may be added to the extent that they do not affect the characteristics of the present invention.
Ｉｎ、Ｓｒ、Ｍｇ、Ｔｉ、Ｚｒ、Ｐｂ等を添加すること
は任意である。Addition of In, Sr, Mg, Ti, Zr, Pb, etc. is optional.
〈発明の効果〉 本発明は上記の構成であるから、以下の利点を有する。<Effect of the invention> Since the present invention has the above configuration, it has the following advantages.
不可避不純物を含む純度９９．９９％以上のＡＵにＣａ
を５〜１００重量ｐｐｍとＹを１００〜５００重量ｐｐ
ｍ添加することによって、再結晶範囲が短くなり、これ
にＧｅを３０〜１００重量ｐｐｍかＢｅを５〜１５重量
ｐｐｍかこれら両者を複合添加することによって、伸線
加工が容易になると共にボールが硬くなり過ぎないので
、破断位置を一定にしてボールのティル残り量を短くし
ながら加工性の低下及びチップ割れを防止することがで
きる。Ca in AU with purity of 99.99% or more containing unavoidable impurities
5-100 ppm by weight and Y 100-500 ppm by weight
By adding m, the recrystallization range becomes shorter, and by adding 30 to 100 weight ppm of Ge, 5 to 15 weight ppm of Be, or a combination of both, wire drawing becomes easier and the ball becomes easier. Since it does not become too hard, it is possible to keep the fracture position constant and shorten the remaining amount of ball till, while preventing deterioration in workability and chip cracking.
従って、ワイヤボンダーの機械的な動作でワイヤーを切
断することなく均一なバンプ電極を形成できる。Therefore, a uniform bump electrode can be formed without cutting the wire by the mechanical operation of the wire bonder.
特 許Special permission
Claims (1)
ルを配線の上面又は半導体素子の上面に接着させた状態
でワイヤを引張ることにより、ボールがその根本部から
切断されて配線の上面又は半導体素子の上面にバンプ電
極を形成せしめるバンプ電極用金線において、前記ワイ
ヤが高純度ＡｕにＣａを５〜１００重量ｐｐｍと、Ｙを
１００〜５００重量ｐｐｍと、Ｇｅを３０〜１００重量
ｐｐｍかＢｅを５〜１５重量ｐｐｍの１種又は２種とを
含有させて形成したことを特徴とするバンプ電極用金線
。By heating the tip of a thin wire to form a ball and pulling the wire with the ball adhered to the top surface of the wiring or the top surface of the semiconductor element, the ball is cut from its root and the ball is attached to the top surface of the wiring or semiconductor element. In the bump electrode gold wire for forming the bump electrode on the top surface of the element, the wire is made of high purity Au, 5 to 100 ppm by weight of Ca, 100 to 500 ppm by weight of Y, and 30 to 100 ppm by weight of Ge or Be. A gold wire for a bump electrode, characterized in that it is formed by containing 5 to 15 ppm by weight of one or both of the following.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2116036A JP2826169B2 (en) | 1990-05-02 | 1990-05-02 | Gold wire for bump electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2116036A JP2826169B2 (en) | 1990-05-02 | 1990-05-02 | Gold wire for bump electrode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0412543A true JPH0412543A (en) | 1992-01-17 |
| JP2826169B2 JP2826169B2 (en) | 1998-11-18 |
Family
ID=14677151
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2116036A Expired - Fee Related JP2826169B2 (en) | 1990-05-02 | 1990-05-02 | Gold wire for bump electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2826169B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6123786A (en) * | 1993-09-06 | 2000-09-26 | Mitsubishi Materials Corporation | Gold materials for accessories hardened with minor alloying components |
| JP2009062808A (en) * | 2007-07-30 | 2009-03-26 | Bauer Maschinen Gmbh | Foundation building equipment that creates trenches in the soil |
-
1990
- 1990-05-02 JP JP2116036A patent/JP2826169B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6123786A (en) * | 1993-09-06 | 2000-09-26 | Mitsubishi Materials Corporation | Gold materials for accessories hardened with minor alloying components |
| JP2009062808A (en) * | 2007-07-30 | 2009-03-26 | Bauer Maschinen Gmbh | Foundation building equipment that creates trenches in the soil |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2826169B2 (en) | 1998-11-18 |
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