JPH04124273A - Method and device for plasma cvd treatment inside surface of pipe - Google Patents
Method and device for plasma cvd treatment inside surface of pipeInfo
- Publication number
- JPH04124273A JPH04124273A JP24253990A JP24253990A JPH04124273A JP H04124273 A JPH04124273 A JP H04124273A JP 24253990 A JP24253990 A JP 24253990A JP 24253990 A JP24253990 A JP 24253990A JP H04124273 A JPH04124273 A JP H04124273A
- Authority
- JP
- Japan
- Prior art keywords
- tube
- treated
- plasma
- plasma cvd
- pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 9
- 239000002994 raw material Substances 0.000 claims abstract description 8
- 239000012159 carrier gas Substances 0.000 claims abstract description 7
- 230000004907 flux Effects 0.000 claims abstract description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 22
- 239000007789 gas Substances 0.000 claims description 16
- 238000003672 processing method Methods 0.000 claims description 4
- 238000010891 electric arc Methods 0.000 abstract description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 239000002184 metal Substances 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は管内面に対するプラズマＣＶＤ処理方法及びそ
の装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a plasma CVD treatment method and apparatus for the inner surface of a tube.
（従来の技術及び発明が解決しようとする課題）ステン
レス管等の金属管内面に対する処理装置の一例として実
開平１−１７７２６３号公報に示された内面処理装置が
知られている。しかし、この装置では、金属管の端部と
中央部とでは膜厚に差を生じ易いという問題点がある。(Prior Art and Problems to be Solved by the Invention) As an example of an apparatus for treating the inner surface of a metal tube such as a stainless steel tube, an inner surface treatment apparatus disclosed in Japanese Utility Model Application Publication No. 1-177263 is known. However, this device has a problem in that the film thickness tends to differ between the ends and the center of the metal tube.
このような問題点に対し、金属管内に小型の溶射ガンを
回転させながら導入させて内面処理を行う方法が提案さ
れているが、実用化には至っていないのが現状である。To address these problems, a method has been proposed in which a small thermal spray gun is rotated and introduced into the metal tube to treat the inner surface, but this method has not yet been put to practical use.
このような観点から１本発明の課題は管内面に均一な膜
厚で処理膜を形成できるプラズマＣＶＤ処理方法及び装
置を提供することにある。From this point of view, one object of the present invention is to provide a plasma CVD processing method and apparatus that can form a treated film with a uniform thickness on the inner surface of a tube.
（課題を解決するだめの手段）
本発明によるプラズマＣＶＤ処理方法は１圧力勾配型放
電により形成したプラズマを利用して被処理管内面にプ
ラズマＣＶＤ処理を行う方法であり、前記被処理管の一
端から他端に向かうプラズマビームを形成し、前記被処
理管に沿って移動可能な磁場制御手段により前記被処理
管の内面にプラズマを照射させるようにしたことを特徴
とする。(Means for Solving the Problems) The plasma CVD processing method according to the present invention is a method of performing plasma CVD processing on the inner surface of a tube to be treated using plasma formed by one pressure gradient type discharge, and in which one end of the tube to be treated is A plasma beam is formed from one end toward the other end, and the inner surface of the tube to be treated is irradiated with the plasma by a magnetic field control means movable along the tube to be treated.
本発明によればまた。被処理管の一端にプラズマビーム
形成用の圧力勾配型プラズマ銃を設けると共に、前記被
処理管の外周には前記プラズマビームを案内する磁束源
と前記被処理管に沿って移動可能な磁場制御手段とを設
けて合成磁場によるプラズマを前記被処理管内面に照射
させるようにした管内面のプラズマＣＶＤ処理装置が得
られる。Also according to the invention. A pressure gradient type plasma gun for forming a plasma beam is provided at one end of the tube to be treated, and a magnetic flux source for guiding the plasma beam and a magnetic field control means movable along the tube are provided on the outer periphery of the tube to be treated. There is obtained a plasma CVD processing apparatus for the inner surface of a tube, which is provided with a synthetic magnetic field to irradiate the inner surface of the tube to be treated with plasma.
（作用）
本発明は、被処理管の内部を真空にしてプラズマＣＶＤ
により管内面を処理するものであり、圧力勾配型プラズ
マ銃により被処理管内にプラズマビームを照射すると共
に、被処理管の外部に配設された磁束源でプラズマビー
ムを被処理管の中心軸に位置せしめ、しかも磁場制御手
段によりプラズマビームに対して合成磁場（カスプ磁場
）を作用させることによりプラズマが管内面に照射され
るようにしている。そして、磁場制御手段を被処理管に
沿って移動させることにより、管内面に対するプラズマ
照射位置を移動させ、均一な膜厚を得ることができるよ
うにしている。(Function) The present invention uses a plasma CVD method in which the inside of the tube to be processed is evacuated.
A pressure gradient plasma gun irradiates the inside of the tube with a plasma beam, and a magnetic flux source installed outside the tube directs the plasma beam toward the center axis of the tube. The inner surface of the tube is irradiated with plasma by positioning the plasma beam and applying a composite magnetic field (cusp magnetic field) to the plasma beam using a magnetic field control means. By moving the magnetic field control means along the tube to be treated, the plasma irradiation position on the inner surface of the tube can be moved and a uniform film thickness can be obtained.
（実施例） 以下に本発明の実施例を図面を参照して説明する。(Example) Embodiments of the present invention will be described below with reference to the drawings.
第１図は本発明の第１の実施例を示し、被処理管３の内
面にプラズマＣＶＤ処理を行う装置である。被処理管３
の一端には、原料ガス導入部７を介して圧力勾配型のプ
ラズマ銃１をフランジ結合している。プラズマ銃１はキ
ャリアガス導入部１１を有している。２はゲート弁であ
る。被処理管３の他端には、排気系８を介して水冷ター
ゲット６をフランジ結合している。被処理管３の周囲に
は、プラズマ銃１から射出されたプラズマビームを被処
理管３の中心軸上に位置せしめるためのビームガイド用
コイル４を被処理管３の全長にわたって配置している。FIG. 1 shows a first embodiment of the present invention, which is an apparatus for performing plasma CVD treatment on the inner surface of a tube 3 to be treated. Tube to be treated 3
A pressure gradient type plasma gun 1 is flange-coupled to one end of the chamber through a raw material gas introduction section 7 . The plasma gun 1 has a carrier gas introduction section 11. 2 is a gate valve. A water-cooled target 6 is flange-connected to the other end of the tube to be treated 3 via an exhaust system 8 . A beam guide coil 4 is arranged around the tube to be processed 3 over the entire length of the tube to be processed 3 to position the plasma beam emitted from the plasma gun 1 on the central axis of the tube to be processed 3 .
被処理管３の外周であってビームガイド用コイル４の内
側には、被処理管３に沿って移動可能なように磁場制御
部５を配置している。磁場制御部５は永久磁石あるいは
電磁石で実現される。A magnetic field control section 5 is disposed on the outer periphery of the tube 3 to be treated and inside the beam guide coil 4 so as to be movable along the tube 3 to be treated. The magnetic field control unit 5 is realized by a permanent magnet or an electromagnet.
プラズマ銃１には負電位が印加され、ビーム収束部１２
や原料ガス導入部７はそれぞれ抵抗器を介して接地され
、被処理管３．水冷ターゲツト６はそれぞれ、直接接地
されている。A negative potential is applied to the plasma gun 1, and the beam converging section 12
and the raw material gas introduction section 7 are each grounded via a resistor, and the tubes to be treated 3. Each water-cooled target 6 is directly grounded.
処理動作を説明すると、はじめに排気系８により被処理
管内を真空状態にし、原料ガス導入部７からは原料ガス
を、ギヤリアガス導入部１１からはキャリアガスをそれ
ぞれ導入する。排気を持続した状態でプラズマ銃１によ
り水冷ターゲット６との間でアーク放電を発生させ、プ
ラズマビームをつくる。ビームガイド用コイル４から発
生される磁束は、プラズマビームを被処理管３の中心軸
上に位置せしめるように作用する。更に、磁場制御部５
によりプラズマビームに対してカスブ磁場を作用させる
ことでプラズマがカスブ状磁場の磁力線に沿って被処理
管３の内面に照射されるようにする。このことにより、
プラズマが照射された被処理管３の内面は温度上昇し、
プラズマＣＶＤによる膜堆積が生ずる。そして、磁場制
御部５を定速で移動させることで被処理管３の内面への
照射位置を移動させ均一な膜厚を得るようにする。To explain the processing operation, first, the inside of the tube to be processed is brought into a vacuum state by the exhaust system 8, and the raw material gas is introduced from the raw material gas introduction section 7, and the carrier gas is introduced from the gear gas introduction section 11, respectively. While the exhaust is maintained, arc discharge is generated between the plasma gun 1 and the water-cooled target 6 to create a plasma beam. The magnetic flux generated from the beam guide coil 4 acts to position the plasma beam on the central axis of the tube 3 to be processed. Furthermore, the magnetic field control section 5
By applying a cusp magnetic field to the plasma beam, the plasma is irradiated onto the inner surface of the tube 3 to be processed along the lines of magnetic force of the cusp magnetic field. Due to this,
The temperature of the inner surface of the tube to be processed 3 irradiated with plasma increases,
Film deposition by plasma CVD occurs. Then, by moving the magnetic field control unit 5 at a constant speed, the irradiation position on the inner surface of the tube to be treated 3 is moved to obtain a uniform film thickness.
第２図は本発明の第２の実施例を示す。この実施例は、
第１図の実施例と比べて、原料ガス導入部と排気系の設
置箇所を入れ換えた点で異なる。FIG. 2 shows a second embodiment of the invention. This example is
This embodiment differs from the embodiment shown in FIG. 1 in that the installation locations of the raw material gas introduction section and the exhaust system are switched.
すなわち、被処理管３の一端とプラズマ銃１との間に排
気系８′を設け、被処理管３の他端に原料ガス導入部７
′をフランジ結合している。That is, an exhaust system 8' is provided between one end of the tube 3 to be treated and the plasma gun 1, and a source gas introduction section 7 is provided at the other end of the tube 3 to be treated.
' are flange-connected.
このような例によれば、原料ガスの流れがプラズマビー
ムと逆向になり、これは被処理管３内の原料ガス濃度を
高めて膜堆積の効率を向上させることかできる。According to such an example, the flow of the source gas is in the opposite direction to the plasma beam, which can increase the concentration of the source gas in the tube 3 to be processed and improve the efficiency of film deposition.
第３図は本発明の第３の実施例を示す。この例は、第２
図の実施例における被処理管３を真空容器２０内に収容
するようにしたものである。真空容器２０の一端に排気
系８′を介してプラズマ銃１をフランジ結合し、真空容
器２０の他端に原料ガス導入部７′をフランジ結合して
いる。このため、ビームガイド用コイル４．磁場、制御
部５′は真空容器２０の外周に配置し、特に磁場制御部
５′は複数個の永久磁石あるいは電磁石で実現するよう
にしている。２１は、真空容器２０内での被処理管３の
移動を容品にするための台車であり、２２は被処理管３
への電流導入用端子である。この例によれば、被処理管
３にフランジ結合用のフランジを設ける必要が無い。FIG. 3 shows a third embodiment of the invention. This example is the second
The tube to be processed 3 in the illustrated embodiment is housed in a vacuum container 20. The plasma gun 1 is flange-bonded to one end of the vacuum vessel 20 via an exhaust system 8', and the source gas introduction section 7' is flange-bonded to the other end of the vacuum vessel 20. For this reason, beam guide coil 4. The magnetic field control section 5' is arranged on the outer periphery of the vacuum vessel 20, and in particular, the magnetic field control section 5' is realized by a plurality of permanent magnets or electromagnets. 21 is a cart for moving the tube 3 to be treated within the vacuum container 20; 22 is a truck for moving the tube 3 to be treated within the vacuum container 20;
This is a terminal for introducing current into the According to this example, there is no need to provide a flange for flange connection on the tube 3 to be treated.
なお、実施例では被処理管として直管を示したが、環状
等の曲管であっても同様にして内面処理を行うことがで
きる。In the embodiment, a straight pipe is shown as the pipe to be treated, but even a curved pipe, such as an annular pipe, can be subjected to the inner surface treatment in the same manner.
（発明の効果）
以上説明してきたように１本発明によれば圧力勾配型の
プラズマ銃を用いて被処理管内にプラズマビームを形成
し、移動可能な磁場制御部により被処理管の任意の位置
で磁場をカスブ状に変形させることでプラズマを被処理
管の内面に照射させることができるので、被処理管内面
に均一な膜厚で処理膜を形成することができる。しかも
、圧力勾配型放電を利用しているので、プラズマＣＶＤ
の原料ガスがプラズマ銃内部に流入することがなく、長
時間にわたって安定した内面処理を行うことができる。(Effects of the Invention) As explained above, according to the present invention, a pressure gradient type plasma gun is used to form a plasma beam inside the tube to be treated, and a movable magnetic field control section is used to control the plasma beam at any position on the tube to be treated. By deforming the magnetic field into a cusp shape, the plasma can be irradiated onto the inner surface of the tube to be treated, so that a treated film with a uniform thickness can be formed on the inner surface of the tube to be treated. Moreover, since pressure gradient discharge is used, plasma CVD
The raw material gas does not flow into the plasma gun, making it possible to perform stable inner surface treatment over a long period of time.
第１図〜第３図はそれぞれ本発明の第１〜第３の実施例
の縦断面図。
図中、１は圧力勾配型のプラズマ銃、２はゲート弁、３
は被処理管、４はビームガイド用コイル。
５は磁場制御部、６は水冷ターゲット、７は原料ガス導
入部、８は排気系、１１はキャリアガス導入部、２０は
真空容器。1 to 3 are longitudinal sectional views of first to third embodiments of the present invention, respectively. In the figure, 1 is a pressure gradient type plasma gun, 2 is a gate valve, and 3
4 is the tube to be processed, and 4 is the beam guide coil. 5 is a magnetic field control section, 6 is a water-cooled target, 7 is a source gas introduction section, 8 is an exhaust system, 11 is a carrier gas introduction section, and 20 is a vacuum vessel.
Claims (1)
被処理管内面にプラズマＣＶＤ処理を行う処理方法にお
いて、前記被処理管の一端から他端に向かうプラズマビ
ームを形成し、前記被処理管に沿って移動可能な磁場制
御手段により前記被処理管の内面にプラズマを照射させ
るようにした管内面のプラズマＣＶＤ処理方法。 ２）請求項１記載の管内面のプラズマＣＶＤ処理方法に
おいて、前記被処理管の一端側からキャリアガスを、前
記被処理管の他端側から原料ガスを導入することを特徴
とする管内面のプラズマＣＶＤ処理方法。 ３）請求項１あるいは２記載の管内面のプラズマＣＶＤ
処理方法において、前記被処理管を真空容器に収容する
ようにしたことを特徴とする管内面のプラズマＣＶＤ処
理方法。 ４）圧力勾配型放電により形成したプラズマを利用して
被処理管内面にプラズマＣＶＤ処理を行う処理装置にお
いて、前記被処理管の一端にプラズマビーム形成用の圧
力勾配型プラズマ銃を設けると共に、前記被処理管の外
周には前記プラズマビームを案内する磁束源と前記被処
理管に沿って移動可能な磁場制御手段とを設けて合成磁
場によるプラズマを前記被処理管内面に照射させるよう
にした管内面のプラズマＣＶＤ処理装置。 ５）請求項４記載の管内面のプラズマＣＶＤ処理装置に
おいて、前記被処理管の一端に、前記圧力勾配型プラズ
マ銃に加えて原料ガス導入系及びキャリアガス導入系と
をフランジ結合し、前記被処理管の他端に排気系をフラ
ンジ結合して成る管内面のプラズマＣＶＤ処理装置。 ６）請求項４記載の管内面のプラズマＣＶＤ処理装置に
おいて、前記被処理管の一端に、前記圧力勾配型プラズ
マ銃に加えてキャリアガス導入系及び排気系をフランジ
結合し、前記被処理管の他端には原料ガス導入系をフラ
ンジ結合して前記プラズマビームとは逆向きに原料ガス
を導入するようにしたことを特徴とする管内面のプラズ
マＣＶＤ処理装置。 ７）請求項４〜６のいずれかに記載の管内面のプラズマ
ＣＶＤ処理装置において、前記被処理管を真空容器に収
容するようにしたことを特徴とする管内面のプラズマＣ
ＶＤ処理装置。[Scope of Claims] 1) A processing method for performing plasma CVD treatment on the inner surface of a tube to be treated using plasma formed by pressure gradient discharge, the method comprising: forming a plasma beam directed from one end of the tube to the other end; . A plasma CVD treatment method for an inner surface of a tube, wherein the inner surface of the tube to be treated is irradiated with plasma by a magnetic field control means movable along the tube to be treated. 2) The plasma CVD treatment method for the inner surface of a tube according to claim 1, characterized in that a carrier gas is introduced from one end of the tube to be treated, and a raw material gas is introduced from the other end of the tube to be treated. Plasma CVD processing method. 3) Plasma CVD on the inner surface of the tube according to claim 1 or 2.
A plasma CVD treatment method for an inner surface of a tube, characterized in that the tube to be treated is housed in a vacuum container. 4) In a processing apparatus that performs plasma CVD processing on the inner surface of a tube to be treated using plasma formed by a pressure gradient discharge, a pressure gradient plasma gun for forming a plasma beam is provided at one end of the tube to be treated; A magnetic flux source for guiding the plasma beam and a magnetic field control means movable along the tube are provided on the outer periphery of the tube to be treated, so that the inner surface of the tube is irradiated with plasma by a synthetic magnetic field. Surface plasma CVD processing equipment. 5) In the plasma CVD processing apparatus for the inner surface of a tube according to claim 4, in addition to the pressure gradient type plasma gun, a source gas introduction system and a carrier gas introduction system are flange-coupled to one end of the tube to be treated, and the A plasma CVD processing device for the inner surface of a tube, which is constructed by flange-bonding an exhaust system to the other end of the processing tube. 6) In the plasma CVD processing apparatus for the inner surface of a tube according to claim 4, in addition to the pressure gradient type plasma gun, a carrier gas introduction system and an exhaust system are flange-coupled to one end of the tube to be treated. A plasma CVD processing apparatus for an inner surface of a tube, characterized in that a source gas introduction system is flange-bonded to the other end so that source gas is introduced in a direction opposite to the plasma beam. 7) In the plasma CVD treatment apparatus for the inner surface of a tube according to any one of claims 4 to 6, the tube to be treated is housed in a vacuum container.
VD processing equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24253990A JP2916942B2 (en) | 1990-09-14 | 1990-09-14 | Plasma CVD treatment method and apparatus for inner surface of tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24253990A JP2916942B2 (en) | 1990-09-14 | 1990-09-14 | Plasma CVD treatment method and apparatus for inner surface of tube |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04124273A true JPH04124273A (en) | 1992-04-24 |
| JP2916942B2 JP2916942B2 (en) | 1999-07-05 |
Family
ID=17090617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24253990A Expired - Lifetime JP2916942B2 (en) | 1990-09-14 | 1990-09-14 | Plasma CVD treatment method and apparatus for inner surface of tube |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2916942B2 (en) |
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-
1990
- 1990-09-14 JP JP24253990A patent/JP2916942B2/en not_active Expired - Lifetime
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| Publication number | Publication date |
|---|---|
| JP2916942B2 (en) | 1999-07-05 |
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