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JPH04112440A - Observation device - Google Patents

Observation device

Info

Publication number
JPH04112440A
JPH04112440A JP2232132A JP23213290A JPH04112440A JP H04112440 A JPH04112440 A JP H04112440A JP 2232132 A JP2232132 A JP 2232132A JP 23213290 A JP23213290 A JP 23213290A JP H04112440 A JPH04112440 A JP H04112440A
Authority
JP
Japan
Prior art keywords
electron beam
electron
hole
analysis
observation device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2232132A
Other languages
Japanese (ja)
Inventor
Toyoyasu Tadokoro
豊康 田所
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Seiki Co Ltd
Original Assignee
Nippon Seiki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Seiki Co Ltd filed Critical Nippon Seiki Co Ltd
Priority to JP2232132A priority Critical patent/JPH04112440A/en
Publication of JPH04112440A publication Critical patent/JPH04112440A/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔産業上の利用分野] 本発明は電子顕微鏡型の観察装置に関するものである。[Detailed description of the invention] [Industrial application field] The present invention relates to an electron microscope type observation device.

〔従来の技術及び発明が解決しようとする課題〕走査電
子顕微鏡は、電子線を分析資料の表面に照射し、放出さ
れる二次電子を検出するもので、電子線を走査すること
で二次電子の検出値が変化し、この変化量をコンピュー
タを用いて解析処理をなして画像表示を行うものである
[Prior art and problems to be solved by the invention] A scanning electron microscope is a device that irradiates the surface of an analysis material with an electron beam and detects the emitted secondary electrons. The detected value of electrons changes, and this amount of change is analyzed using a computer and displayed as an image.

ところで第2図(イ)に示すように、分析対象が基板a
に穿設された孔すの内側面である場合、そのままでは従
来の電子顕微鏡を用いての観察が不可能であったので、
同図(1))に示すように分析資料片の基板aを分割し
て孔す内側面の観察を行っていた。
By the way, as shown in Figure 2 (a), the analysis target is substrate a.
Since it was impossible to observe the inner surface of a hole drilled in the hole using a conventional electron microscope,
As shown in Figure (1)), the substrate a of the analysis material piece was divided and the inner surface of the hole was observed.

しかし基板aを切断して分析資料を形成すると云う煩雑
さがあり、更に切断加工によって、観察対象である孔す
内側面に変形を与える可能性があって必ずしも正確な観
察が行なえるものでない等の問題点が存在する。
However, it is complicated to cut the substrate a to form analysis materials, and furthermore, the cutting process may deform the inner surface of the hole that is the object of observation, so accurate observation is not always possible. There are problems with this.

そこで本発明は分析資料片を分割せずに孔内側面の観測
が可能な観察装置を提案したものである。
Therefore, the present invention proposes an observation device that allows observation of the inner surface of a hole without dividing the analysis sample piece.

〔課題を解決するための手段〕[Means to solve the problem]

本発明に係る観察装置は、分析資料表面に電子線を走査
しながら照射して、照射面から放出される二次電子を検
出し、分析資料表面状態を解析処理して画像表示をなす
走査電子顕微鏡型の観察装置において、電子線延長線上
にマイナスの高電圧を印加した針プローブを設置し、電
子線を折曲して分析資料側面に照射して、分析資料側面
を画像表示することを特徴とするものである。
The observation device according to the present invention scans and irradiates the surface of an analysis material with an electron beam, detects secondary electrons emitted from the irradiated surface, analyzes the surface state of the analysis material, and displays an image using scanning electron beams. In a microscope-type observation device, a needle probe to which a negative high voltage is applied is installed on the electron beam extension line, and the electron beam is bent and irradiated onto the side of the analysis material to display an image of the side of the analysis material. That is.

〔作用〕[Effect]

観察対象である孔内側面に電子線が入射するように分析
資料片を位置せしめ、針プローブに適当な負電圧を印加
すると、電子線は折曲して進行し、孔内側面へ衝突する
。従って電子線を円を描くように走査せしめると孔内側
面全周に衝突し、更に針プローブの上下位置調整或いは
電圧調整等によって電子線の衝突個所が孔内側面の上下
方向に移行するので、電子線衝突時の二次電子放出を検
出し、解析処理を行うと、孔内側面の画像表示が可能と
なるものである。
When the analysis sample piece is positioned so that the electron beam is incident on the inner surface of the hole, which is the object of observation, and an appropriate negative voltage is applied to the needle probe, the electron beam bends and travels, colliding with the inner surface of the hole. Therefore, if the electron beam is scanned in a circular manner, it will collide with the entire circumference of the inner surface of the hole, and further, by adjusting the vertical position of the needle probe or adjusting the voltage, the collision point of the electron beam will shift in the vertical direction of the inner surface of the hole. By detecting secondary electron emission upon electron beam collision and performing analysis processing, it becomes possible to display an image of the inner surface of the hole.

〔実施例〕〔Example〕

次に本発明の実施例について説明する。 Next, examples of the present invention will be described.

本発明装置は基本的に走査電子顕微鏡と同一で、第3図
に示すようにフィラメント(電子源)11ウェネルト1
2.アノード13からなる電子銃1と、収束レンズ(コ
イル)2と、対物絞り3と、走査用コイル4と、対物レ
ンズ(コイル)5と、資料装着部6と、二次電子検出器
7を備え、更に資料装着部6の中心下方に上下移動可能
とした針プローブ8を設置し、また走査コイル4の動作
及び針プローブ8の動作と、二次電子検出器7の検出値
を処理用入力とし、解析処理を行うと共に画像表示をな
す表示部(図示せず)を設けてなるものである。
The apparatus of the present invention is basically the same as a scanning electron microscope, and as shown in FIG.
2. It includes an electron gun 1 consisting of an anode 13, a converging lens (coil) 2, an objective aperture 3, a scanning coil 4, an objective lens (coil) 5, a material mounting section 6, and a secondary electron detector 7. Furthermore, a needle probe 8 that can be moved vertically is installed below the center of the material mounting section 6, and the operation of the scanning coil 4, the operation of the needle probe 8, and the detected value of the secondary electron detector 7 are used as processing inputs. , a display section (not shown) that performs analysis processing and displays images.

而かして第2図(イ)に示すような基板aに孔すを穿設
してなる分析資料片の孔すの内側面を観察する場合、電
子銃1からの電子線Aが孔す内に入射するように分析資
料片を資料装着部6に装着し、電子銃1から電子線Aを
発射して孔すの内側面を観察するものである。即ち、針
プローブ8に一5kv程度の負電圧を印加し、電子銃1
の電子加速電圧を1〜4kv(電子線が後述する所定の
折曲を行うに必要な電圧)とすると、電子銃1がら発射
された電子線Aは針プローブ8の負電圧によって折曲し
て進行し、孔すの内側面に衝突する。尚電子銃1の電子
加速電圧が低いと電子線Aは孔す内に入射する前に折曲
してしまい、また逆に高いと針プローブ8の負電圧に勝
って孔すを通過してしまうので、適度に調整する。電子
線Aが孔すの内側面に衝突すると、衝突部分より二次電
子Bが放出され、二次電子Bは正電位を保っている二次
電子検出器7で捕捉される。
When observing the inner surface of a hole in an analysis sample piece made by drilling a hole in a substrate a as shown in FIG. 2(a), the electron beam A from the electron gun An analysis material piece is attached to the material mounting part 6 so that the analysis material enters the hole, and an electron beam A is emitted from the electron gun 1 to observe the inner surface of the hole. That is, a negative voltage of about 15 kV is applied to the needle probe 8, and the electron gun 1 is
Assuming that the electron acceleration voltage of is 1 to 4 kV (voltage required for the electron beam to bend in a predetermined manner as described later), the electron beam A fired from the electron gun 1 is bent by the negative voltage of the needle probe 8. It advances and collides with the inner surface of the hole. If the electron acceleration voltage of the electron gun 1 is low, the electron beam A will bend before entering the hole, and if it is high, it will overcome the negative voltage of the needle probe 8 and pass through the hole. Therefore, adjust it appropriately. When the electron beam A collides with the inner surface of the hole, secondary electrons B are emitted from the colliding portion, and the secondary electrons B are captured by the secondary electron detector 7 which maintains a positive potential.

従って電子線Aの衝突位置を順次変化させ、その際の二
次電子Bの捕捉を解析処理することによって、孔すの内
側面を画像表示し、その観察が可能となったものである
Therefore, by sequentially changing the collision position of the electron beam A and analyzing the capture of the secondary electrons B at that time, it is possible to display an image of the inner surface of the hole and observe it.

尚電子線Aの衝突位置調整は、電子線Aの走査ト針プロ
ーブ8の上下移動で可能であるが、その他電子銃1の電
子加速電圧の調整、針プローブ8の負電圧調整や資料装
着部6の位置調整によっても実現できる。
The collision position of the electron beam A can be adjusted by moving the electron beam A scanning needle probe 8 up and down, but it is also possible to adjust the electron acceleration voltage of the electron gun 1, adjust the negative voltage of the needle probe 8, and adjust the material mounting part. This can also be achieved by adjusting the position of step 6.

〔発明の効果〕〔Effect of the invention〕

本発明は以上のように従前の走査電子顕微鏡型の観察装
置に於いて、電子線延長上に負電圧の針プローブを設け
、電子線を折曲して分析資料側面に衝突させるようにし
たもので、分析資料を分割せずに孔内側面の観察を可能
としたものである。
As described above, the present invention is a conventional scanning electron microscope type observation device in which a needle probe with a negative voltage is provided on the extension of the electron beam, so that the electron beam is bent and collided with the side of the analysis sample. This makes it possible to observe the inside surface of the hole without dividing the analysis material.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明装置の原理図、第2図は分析資料片を示
すもので(イ)は分割前、(ロ)は分割後、第3図は本
発明装置の実施例の要部断面図である。 1−電子銃     11−フィラメント12− ウェ
ネルト   13−アノード2−収束レンズ   3−
=対物絞り 4−走査コイル   5一対物レンズ 6−=資料装着部   7−二次電子検出器8−針プロ
ーブ 第1 図 第2 図
Fig. 1 shows the principle of the device of the present invention, Fig. 2 shows analysis data pieces, (a) before division, (b) after division, and Fig. 3 a cross section of the main part of the embodiment of the inventive device. It is a diagram. 1-Electron gun 11-Filament 12-Wehnelt 13-Anode 2-Converging lens 3-
=Objective aperture 4-Scanning coil 5-Objective lens 6-=Data mounting section 7-Secondary electron detector 8-Needle probe 1 Fig. 2

Claims (1)

【特許請求の範囲】[Claims] (1)分析資料表面に電子線を走査しながら照射して、
照射面から放出される二次電子を検出し、分析資料表面
状態を解析処理して画像表示をなす走査電子顕微鏡型の
観察装置において、電子線延長線上にマイナスの高電圧
を印加した針プローブを設置し、電子線を折曲して分析
資料側面に照射して、分析資料側面を画像表示すること
を特徴とする観察装置。
(1) Scanning and irradiating the surface of the analysis material with an electron beam,
In a scanning electron microscope type observation device that detects secondary electrons emitted from the irradiated surface, analyzes the surface condition of the analysis sample, and displays an image, a needle probe with a high negative voltage applied to the extension line of the electron beam is used. An observation device that displays an image of the side surface of the analysis material by bending an electron beam and irradiating the side surface of the analysis material.
JP2232132A 1990-08-31 1990-08-31 Observation device Pending JPH04112440A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2232132A JPH04112440A (en) 1990-08-31 1990-08-31 Observation device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2232132A JPH04112440A (en) 1990-08-31 1990-08-31 Observation device

Publications (1)

Publication Number Publication Date
JPH04112440A true JPH04112440A (en) 1992-04-14

Family

ID=16934501

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2232132A Pending JPH04112440A (en) 1990-08-31 1990-08-31 Observation device

Country Status (1)

Country Link
JP (1) JPH04112440A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007018928A (en) * 2005-07-08 2007-01-25 Hitachi High-Technologies Corp Charged particle beam equipment
JP5504277B2 (en) * 2009-11-26 2014-05-28 株式会社日立ハイテクノロジーズ Scanning electron microscope

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007018928A (en) * 2005-07-08 2007-01-25 Hitachi High-Technologies Corp Charged particle beam equipment
JP5504277B2 (en) * 2009-11-26 2014-05-28 株式会社日立ハイテクノロジーズ Scanning electron microscope
US8921784B2 (en) 2009-11-26 2014-12-30 Hitachi High-Technologies Corporation Scanning electron microscope

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