JPH04107427A - Production of transmission type electrochromic element - Google Patents
Production of transmission type electrochromic elementInfo
- Publication number
- JPH04107427A JPH04107427A JP2225699A JP22569990A JPH04107427A JP H04107427 A JPH04107427 A JP H04107427A JP 2225699 A JP2225699 A JP 2225699A JP 22569990 A JP22569990 A JP 22569990A JP H04107427 A JPH04107427 A JP H04107427A
- Authority
- JP
- Japan
- Prior art keywords
- sealing
- sealing resin
- ecd
- substrate
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005540 biological transmission Effects 0.000 title claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 238000007789 sealing Methods 0.000 claims abstract description 48
- 229920005989 resin Polymers 0.000 claims abstract description 30
- 239000011347 resin Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000010409 thin film Substances 0.000 claims abstract description 9
- 239000007787 solid Substances 0.000 claims abstract description 3
- 238000003825 pressing Methods 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 3
- 206010063836 Atrioventricular septal defect Diseases 0.000 description 21
- 238000001211 electron capture detection Methods 0.000 description 21
- 150000002500 ions Chemical class 0.000 description 15
- 238000004040 coloring Methods 0.000 description 9
- 239000010408 film Substances 0.000 description 6
- 230000002441 reversible effect Effects 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000006722 reduction reaction Methods 0.000 description 4
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 4
- 229910001868 water Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- DZKDPOPGYFUOGI-UHFFFAOYSA-N tungsten(iv) oxide Chemical compound O=[W]=O DZKDPOPGYFUOGI-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 229910000457 iridium oxide Inorganic materials 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- BLBNEWYCYZMDEK-UHFFFAOYSA-N $l^{1}-indiganyloxyindium Chemical compound [In]O[In] BLBNEWYCYZMDEK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000005562 fading Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- -1 hydroxy ions Chemical class 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- IUJMNDNTFMJNEL-UHFFFAOYSA-K iridium(3+);trihydroxide Chemical compound [OH-].[OH-].[OH-].[Ir+3] IUJMNDNTFMJNEL-UHFFFAOYSA-K 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 238000013009 non-moisture curing Methods 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Landscapes
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、透過型エレクトロクロミック素子の製造方法
に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a transmission type electrochromic device.
電圧を印加すると可逆的に電解酸化または還元反応が起
こり可逆的に着色する現象をエレクトロクロミズムと言
う。このような現象を示すエレクトロクロミック(以下
、ECと略称する)物質を用いて、電圧操作により着消
色するEC素子(以下、ECDと称す)を作り、このE
CDを光量制御素子(例えば、防眩ミラー)や、7セグ
メントを利用した数字表示素子に利用しようとする試み
は20年以上前から行われている。例えば、ガラス基板
の上に透明電極膜(陰極)、三酸化タングステン薄膜、
二酸化ケイ素のような絶縁膜、電極膜(陽極)を順次積
層してなるECI) (特公昭52−46098号参
照)が全固体タイプのECDとして知られている。Electrochromism is a phenomenon in which electrolytic oxidation or reduction reactions occur reversibly when a voltage is applied, resulting in reversible coloring. Using an electrochromic (hereinafter abbreviated as EC) substance that exhibits such a phenomenon, we create an EC element (hereinafter abbreviated as ECD) that changes color and fades by voltage manipulation.
Attempts have been made for more than 20 years to utilize CDs as light amount control elements (for example, anti-glare mirrors) and numeric display elements using seven segments. For example, a transparent electrode film (cathode), a tungsten trioxide thin film,
An ECI (ECI) (see Japanese Patent Publication No. 52-46098), which is formed by sequentially laminating an insulating film such as silicon dioxide and an electrode film (anode), is known as an all-solid-state ECD.
このECDに電圧を印加すると、二酸化タングステン(
WO3)薄膜が青色に着色する。その後、このECDに
逆の電圧を印加すると、WOa薄膜の青色か消えて無色
になる。この着色・消色する機構は詳しくは解明されて
いないか、)■03薄膜および絶縁膜(イオン導電層)
中に含まれる少量の水分か、1■03の着色・消色を支
配していると理解されている。着色の反応式は、下記の
ように推定される。When voltage is applied to this ECD, tungsten dioxide (
WO3) The thin film is colored blue. After that, when a reverse voltage is applied to this ECD, the blue color of the WOa thin film disappears and becomes colorless. The mechanism of coloring and decoloring has not been elucidated in detail.) ■03 Thin film and insulating film (ion conductive layer)
It is understood that the small amount of water contained therein controls the coloring and decoloring of 1■03. The reaction formula for coloring is estimated as follows.
・H20→H”+0H
(W03膜=陰極側)
・ (絶縁膜=陽極側)
OH−−1/2 H2O+1/40.2↑十eところで
、EC層を直接又は間接的に挾む一対の電極層は、EC
層の着消色を外部に見せるために少なくとも一方は透明
でなければならない。特に透過型のECDの場合には両
方とも透明でなければならない。透明な電極材料として
は、現在のところSnO□、In2O5、ITO(Sn
02 とIn2O+ との混合物)、ZnOなどが知ら
れているが、これらの材料は比較的透明度か悪いために
薄くしなければならず、この理由及びその他の理由から
ECDはガラス板やプラスチック板などの基板上に形成
するのか普通である。このようなECDの構造の一例を
第1図に示す。・H20→H"+0H (W03 film = cathode side) ・ (Insulating film = anode side) OH--1/2 H2O+1/40.2↑10eBy the way, a pair of electrodes that directly or indirectly sandwich the EC layer The layer is EC
At least one of the layers must be transparent so that the coloring and fading of the layers is visible to the outside. Particularly in the case of a transmissive ECD, both must be transparent. Currently, transparent electrode materials include SnO□, In2O5, and ITO (Sn
02 and In2O+), ZnO, etc., but these materials have relatively poor transparency and must be made thin, and for this and other reasons, ECDs are made of glass plates, plastic plates, etc. It is common to form on a substrate. An example of the structure of such an ECD is shown in FIG.
第1図に於いて、(A)は上部透明電極、(B)は下部
透明電極、(E)は還元着色性EC層(例えばWO2)
、(D)はイオン導電層、(C)は可逆的電解酸化層(
例えば酸化又は水酸化イリジウム)をそれぞれ示し、基
本的にはこの(A)〜(B)の積層構造だけてECDか
構成されるが、前述のとおり、これらのECDは素子基
板(S)上に形成される。さらに、EC層およびイオン
導電層に含まれる少量の水分を保つため、前記積層構造
を非湿気硬化型樹脂で封止し、この封止用樹脂か硬化す
る前に封止用基板を接着させである。In Figure 1, (A) is the upper transparent electrode, (B) is the lower transparent electrode, and (E) is the reduction coloring EC layer (for example, WO2).
, (D) is an ion conductive layer, (C) is a reversible electrolytic oxidation layer (
For example, iridium oxide or iridium hydroxide), and basically the laminated structure of (A) to (B) alone constitutes an ECD, but as mentioned above, these ECDs are mounted on the element substrate (S). It is formed. Furthermore, in order to retain a small amount of moisture contained in the EC layer and the ion conductive layer, the laminated structure is sealed with a non-moisture curing resin, and the sealing substrate is bonded to the resin before the sealing resin is cured. be.
(R)はECDの封止用樹脂例えばエポキシ樹脂であり
、(G)は封止用基板である。(R) is a sealing resin for the ECD, such as an epoxy resin, and (G) is a sealing substrate.
しかしながら、従来の透過型ECDの製造方法において
は、封止用樹脂を素子基板に塗布する際に気泡が混入し
やすいという問題があった。However, in the conventional method of manufacturing a transmission type ECD, there is a problem in that air bubbles are likely to be mixed in when applying the sealing resin to the element substrate.
本発明の目的は、気泡の混入のない透過型ECDを製造
することである。An object of the present invention is to produce a transmission type ECD without inclusion of air bubbles.
前記問題点を解決する為に本発明では、粘度が1000
センチポイズ以下の封止用樹脂を封止用基板に滴下し、
その上から予めECDの形成された素子基板を押し付け
、次いで封止用樹脂を硬化させるようにした。In order to solve the above problems, in the present invention, the viscosity is 1000
Drop the sealing resin of centipoise or less onto the sealing substrate,
An element substrate on which an ECD was previously formed was pressed onto it, and then the sealing resin was cured.
本発明では、1000センチポイズ以下という低粘度の
封止用樹脂を用いるので気泡が入りにくく、また、EC
D上に封止用樹脂を塗布する従来の製造方法より、封止
用基板上に塗布する方が気泡混入の少ないことがわかっ
た。さらに、透明な素子基板を透して封止用樹脂の状態
がわかるので封止時の作業性が向上する。In the present invention, since a sealing resin with a low viscosity of 1000 centipoise or less is used, air bubbles are difficult to enter, and the EC
It has been found that coating the sealing resin on the sealing substrate causes less air bubbles than the conventional manufacturing method in which the sealing resin is coated on the sealing substrate. Furthermore, since the state of the sealing resin can be seen through the transparent element substrate, workability during sealing is improved.
本発明に於けるECDの積層構造は、特にどれと限定さ
れるものではないか、例えば、■電極層ZEC層/イオ
ン導電層/電極層のような4層構造。The laminated structure of the ECD in the present invention is not particularly limited; for example, it may have a four-layer structure such as (1) electrode layer ZEC layer/ion conductive layer/electrode layer.
■電極層/還元着色型EC層/イオン導電層/可逆的電
解酸化層/電極層のような5層構造が好ましい。(2) A five-layer structure such as electrode layer/reduction colored EC layer/ion conductive layer/reversible electrolytic oxidation layer/electrode layer is preferred.
透明電極の材料としては、たとえば、SnO□、In2
O* 、ITOなとか使用される。このような電極層は
、一般には真空蒸着、イオンブレーティング、スパッタ
リングなとの真空薄膜形成技術で形成される。(還元着
色性)EC層としては一般に1v03、Mo5sなどが
使用される。Examples of the material for the transparent electrode include SnO□, In2
O*, ITO, etc. are used. Such an electrode layer is generally formed by a vacuum thin film forming technique such as vacuum evaporation, ion blasting, or sputtering. (Reduction colorability) As the EC layer, 1v03, Mo5s, etc. are generally used.
イオン導電層としては、例えば酸化ケイ素、酸化タンタ
ル、酸化チタン、酸化アルミニウム、酸化ニオブ、酸化
ジルコニウム、酸化ハフニウム、酸化ランタン、フッ化
マグネシウムなどが使用される。これらの物質の薄膜は
製造方法により電子に対して絶縁体であるが、プロトン
(H+)およびヒドロキシイオン(OH−)に対しては
良導体となる。EC層の着色消色反応にはカチオンが必
要とされ、H+イオンやL!+イオンをEC層その他に
含有させる必要がある。H′″イオンは初めからイオン
である必要はなく、電圧が印加されたときにH+イオン
が生じればよく、従ってH+イオンの代わりに水を含有
させてもよい。As the ion conductive layer, for example, silicon oxide, tantalum oxide, titanium oxide, aluminum oxide, niobium oxide, zirconium oxide, hafnium oxide, lanthanum oxide, magnesium fluoride, etc. are used. Thin films of these materials are insulators for electrons due to the manufacturing method, but are good conductors for protons (H+) and hydroxy ions (OH-). Cations are required for the coloring and decoloring reaction of the EC layer, and H+ ions and L! It is necessary to contain + ions in the EC layer and other parts. The H''' ions do not need to be ions from the beginning, but only as long as H+ ions are generated when a voltage is applied. Therefore, water may be included instead of H+ ions.
EC層とイオン導電層とは、どちらを上にしても下にし
てもよい。さらにEC層に対して間にイオン導電層を挟
んて(場合により酸化着色性EC層ともなる)可逆的電
解酸化層ないし触媒層を設けてもよい。このような層と
しては、例えば酸化ないし水酸化イリジウム、同じくニ
ッケル、同じくクロム、同じくバナジウム、同じくルテ
ニウム、同じくロジウムなとがあげられる。これらの物
質は、イオン導電層又は透明電極中に分散されても良い
し、それらを分散してもよい。The EC layer and the ion conductive layer may be placed either side up or down. Further, a reversible electrolytic oxidation layer or a catalyst layer may be provided to the EC layer with an ion conductive layer interposed therebetween (which may also serve as an oxidative coloring EC layer in some cases). Such layers include, for example, iridium oxide or hydroxide, nickel, chromium, vanadium, ruthenium, rhodium. These substances may be dispersed in the ion conductive layer or the transparent electrode, or may be dispersed therein.
矩形のガラス製素子基板(S)の表面全体にITO電極
層を形成し、次にフォトエツチング又はレーザーカッテ
ィングにより、上部電極(A)用の取出し部(F)と下
部電極(B)との間に溝を形成した。これにより取出し
部(F)とそれより隔離した矩形の下部電極(B)を形
成した。なおITOをマスク蒸着することにより直接に
これらのパターンを形成してもよい。次に酸化イリジウ
ムと酸化スズとの混合物からなる可逆的電解酸化層(C
)、酸化タンタル層(D)及び酸化タングステン層(E
)を順に形成した。最後に」二部電極(A)として[T
Oを蒸着してECDを作製した。An ITO electrode layer is formed on the entire surface of a rectangular glass element substrate (S), and then photoetching or laser cutting is performed to form an ITO electrode layer between the lead-out part (F) for the upper electrode (A) and the lower electrode (B). A groove was formed. As a result, a take-out portion (F) and a rectangular lower electrode (B) isolated from the take-out portion (F) were formed. Note that these patterns may be directly formed by depositing ITO using a mask. Next, a reversible electrolytic oxidation layer (C
), tantalum oxide layer (D) and tungsten oxide layer (E
) were formed in sequence. Finally, as a bipartite electrode (A), [T
ECD was fabricated by evaporating O.
この時、ITOは既に基板(S)上に形成された取出し
部(F)と一端か接触するように形成した。At this time, the ITO was formed so that one end was in contact with the extraction part (F) already formed on the substrate (S).
第1工程:封止用治具(I)を用意する。そして封止用
基板(G)上にエポキシ樹脂からなる液状の封止用樹1
ff(R)を円形状(第2a図参照)又は細帯状(第2
b図参照)に捨布した後、封止用治具(I)上に載せて
おく。First step: Prepare a sealing jig (I). Then, a liquid sealing tree 1 made of epoxy resin is placed on the sealing substrate (G).
ff(R) in a circular shape (see Figure 2a) or in a narrow strip shape (second
After discarding the cloth in the cloth (see figure b), place it on the sealing jig (I).
第2工程:透明な素子基板上に形成された全固体薄膜タ
イプの透過型ECD素子を、封止用樹脂に点(第3b図
)又は直線状に接触するようにゆっくりと載置して(第
3c図)、素子面全体を封止用樹脂で覆った。(第’3
d図参照)第3工程:液状の封止用樹脂は常温又はや
や加熱下で放置することにより硬化するので硬化を確認
した後、治具からとりはずして、上部電極及び下部電極
の取出し部に各々、外部配線LA、LBをボンディング
すると本実施例のECDが出来上がる。このECDに、
駆動電源(Su)から着色電圧(+1.35V)を印加
すると、入射させた波長633nmの光に対して透過率
は20%に減少しく10秒後)この透過率は電圧印加を
止めてもしばらく保たれた。今度は消色電圧(−1,3
5V)を印加すると同じく透過率は70%に回復した。2nd step: The all-solid thin film type transmission type ECD element formed on the transparent element substrate is slowly placed on the sealing resin so that it contacts the sealing resin at a point (Figure 3b) or in a straight line ( (FIG. 3c), the entire element surface was covered with a sealing resin. (No. 3
(See figure d) 3rd step: The liquid sealing resin hardens when left at room temperature or slightly heated, so after confirming that it has hardened, remove it from the jig and apply it to the upper and lower electrodes respectively. , and the external wirings LA and LB are bonded to complete the ECD of this embodiment. In this ECD,
When a coloring voltage (+1.35V) is applied from the drive power supply (Su), the transmittance for incident light with a wavelength of 633 nm decreases to 20% (after 10 seconds).This transmittance remains for a while even after the voltage application is stopped. It was kept. This time, the decoloring voltage (-1, 3
5V), the transmittance recovered to 70%.
(10秒後)
このECDは透過光量を電気的に制御し得る調光ガラス
として有用である。(After 10 seconds) This ECD is useful as a light control glass that can electrically control the amount of transmitted light.
以上の通り、本発明によれば、封止時の作業性が向上し
、気泡混入のない樹脂層を形成でき外観、信頼性の良好
な素子が得られる。As described above, according to the present invention, workability during sealing is improved, a resin layer without air bubbles can be formed, and an element with good appearance and reliability can be obtained.
第1図は、ECDの一例を示す概略垂直断面図である。
第2a図及び第2b図は、実施例における封止樹脂の塗
布形状を示す概略平面図である。
第3a図〜第3d図は、実施例における封止工程を示す
概略垂直断面図である。
〔主要部分の符号の説明〕
ECD・・・エレクトロクロミック素子S・・・・・素
子基板
G・・・・・・封止用基板
R・・・・・・(液状あるいは硬化後の)封止用樹脂I
・・・・・・封止用治具FIG. 1 is a schematic vertical sectional view showing an example of an ECD. FIGS. 2a and 2b are schematic plan views showing the application shape of the sealing resin in the example. Figures 3a to 3d are schematic vertical sectional views showing the sealing process in the example. [Explanation of symbols of main parts] ECD...Electrochromic device S...Element substrate G...Sealing substrate R...Sealing (in liquid form or after hardening) Resin I
・・・・・・Sealing jig
Claims (1)
チポイズ以下の硬化可能な封止用樹脂を滴下する工程; 第2工程:透明な素子基板上に形成された全固体薄膜タ
イプの透過型エレクトロクロミック素子を、前記封止用
基板上の前記封止用樹脂に押し付け、それにより該素子
のほぼ全面を前記封止用樹脂で覆う工程;及び 第3工程:前記封止用樹脂を硬化させる工程;からなる
透過型エレクトロクロミック素子の製造方法。[Claims] First step: Dropping a curable sealing resin with a viscosity of 1000 centipoise or less onto a transparent sealing substrate; Second step: Dropping a curable sealing resin having a viscosity of 1000 centipoise or less onto a transparent sealing substrate; a step of pressing a solid thin film type transmission electrochromic element onto the sealing resin on the sealing substrate, thereby covering almost the entire surface of the element with the sealing resin; and a third step: the sealing A method for manufacturing a transmission type electrochromic element, comprising: curing a stopper resin.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2225699A JPH04107427A (en) | 1990-08-28 | 1990-08-28 | Production of transmission type electrochromic element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2225699A JPH04107427A (en) | 1990-08-28 | 1990-08-28 | Production of transmission type electrochromic element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04107427A true JPH04107427A (en) | 1992-04-08 |
Family
ID=16833413
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2225699A Pending JPH04107427A (en) | 1990-08-28 | 1990-08-28 | Production of transmission type electrochromic element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04107427A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5471338A (en) * | 1993-11-12 | 1995-11-28 | Ppg Industries, Inc. | Electrochromic device with plastic substrate |
US5471554A (en) * | 1993-11-12 | 1995-11-28 | Ppg Industries, Inc. | Primer for electrochromic device with plastic substrate |
US5520851A (en) * | 1993-11-12 | 1996-05-28 | Ppg Industries, Inc. | Iridium oxide film for electrochromic device |
EP0730189A1 (en) * | 1995-03-03 | 1996-09-04 | Canon Kabushiki Kaisha | Electrochromic device and method for manufacturing the same |
US5798860A (en) * | 1996-01-16 | 1998-08-25 | Ppg Industries, Inc. | Iridium oxide film for electrochromic device |
-
1990
- 1990-08-28 JP JP2225699A patent/JPH04107427A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5471338A (en) * | 1993-11-12 | 1995-11-28 | Ppg Industries, Inc. | Electrochromic device with plastic substrate |
US5471554A (en) * | 1993-11-12 | 1995-11-28 | Ppg Industries, Inc. | Primer for electrochromic device with plastic substrate |
US5520851A (en) * | 1993-11-12 | 1996-05-28 | Ppg Industries, Inc. | Iridium oxide film for electrochromic device |
US5618390A (en) * | 1993-11-12 | 1997-04-08 | Ppg Industries, Inc. | Iridium oxide film for electrochromic device |
EP0730189A1 (en) * | 1995-03-03 | 1996-09-04 | Canon Kabushiki Kaisha | Electrochromic device and method for manufacturing the same |
US5831760A (en) * | 1995-03-03 | 1998-11-03 | Canon Kabushiki Kaisha | Electrochromic device |
US5798860A (en) * | 1996-01-16 | 1998-08-25 | Ppg Industries, Inc. | Iridium oxide film for electrochromic device |
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