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JPH0398759A - Polishing pad and manufacture thereof - Google Patents

Polishing pad and manufacture thereof

Info

Publication number
JPH0398759A
JPH0398759A JP1233674A JP23367489A JPH0398759A JP H0398759 A JPH0398759 A JP H0398759A JP 1233674 A JP1233674 A JP 1233674A JP 23367489 A JP23367489 A JP 23367489A JP H0398759 A JPH0398759 A JP H0398759A
Authority
JP
Japan
Prior art keywords
resin
polishing pad
polishing
surface layer
flat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1233674A
Other languages
Japanese (ja)
Inventor
Shigenobu Wada
重伸 和田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP1233674A priority Critical patent/JPH0398759A/en
Publication of JPH0398759A publication Critical patent/JPH0398759A/en
Pending legal-status Critical Current

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  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

PURPOSE:To obtain the highly flat machined surface by jointing finely granulated resin mutually so as to be solidified into plate shape and forming resin particles positioned at the surface layer into such structure as to possess flat faces. CONSTITUTION:Finely granulated thermalplastic resin 1 is filled between two plates 3, 4. The plates 3, 4 are then heated while being pressed from the top and bottom up to the softening temperature of the thermalplastic resin 1 so as to soften the surface layer and form a sintered structure with spaces on its surface and inside. A polishing pad made of finely granulated resin 1 solidified into such a structure as to have spaces on the surface and inside can be thus obtained. In this case, resin particles 1 on the surface layer are provided with flat faces 10.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体材料や光学材料を高平坦にポリシング
加工する場合に用いるポリシングバッドの構造とその製
造方法に関する. 〔従来の技術〕 従来、半導体材料や光学材料をポリシング加工する場合
に用いるポリシングバッドとしては、例えば日本学術振
興会第136委員会・第145委員会合同研究会資料<
61.4.18)15べ一ジに黒部が「ボリシャの特性
」として発表した論文の中で述べている様に、ポリウレ
タンを含侵させたポリエステル不織布や、ベース(不織
布)に発泡ポリウレタン層を形成させたものが用いられ
る. ポリウレタンを含侵させたポリエステル不織布で高平坦
ポリシングを行う場合、ポリシング条件によっては表面
層のポリエステル繊維の凹凸が被加工物表面の微細粗さ
の原因となる場合があった。又、ベースに発泡ポリウレ
タン層を形成させたポリシングバッドでは表面層の微細
な凹むや毛羽が平坦性悪化の原因となったり、発泡率の
太きなパッドでは表面層の剛性が低下して被加工物の端
部分のグレの原因となったり、発泡率の小さなパッドで
はポリシング液の保持性が低下したり、ポリシングによ
り生じる加工屑の排出が容易に行われず、被加工物表面
に傷を導入する場合があった。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the structure of a polishing pad used for polishing semiconductor materials and optical materials into a highly flat surface, and a method for manufacturing the same. [Prior Art] Conventionally, polishing pads used when polishing semiconductor materials and optical materials are, for example, materials from the Joint Study Group of the 136th Committee and 145th Committee of the Japan Society for the Promotion of Science.
61.4.18) As stated in the paper published by Kurobe on 15th Page entitled "Characteristics of Bolsha", polyester non-woven fabric impregnated with polyurethane and foamed polyurethane layer on the base (non-woven fabric) are used. The formed one is used. When highly flat polishing is performed using a polyester nonwoven fabric impregnated with polyurethane, the unevenness of the polyester fibers in the surface layer may cause fine roughness on the surface of the workpiece, depending on the polishing conditions. In addition, with polishing pads that have a foamed polyurethane layer formed on the base, fine dents and fuzz on the surface layer may cause deterioration of flatness, and with pads with a thick foaming ratio, the rigidity of the surface layer decreases, making it difficult to process the workpiece. This may cause blurring on the edges of the workpiece, a pad with a low foaming rate may have poor retention of polishing liquid, and processing debris generated during polishing cannot be easily discharged, causing scratches on the surface of the workpiece. There was a case.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述したように、従来のポリシングパッドでは表面の高
平坦性と適当な硬度及びボリシンダ液の保持性、ポリシ
ング屑の排出性を兼ねそなえることは困難であった。
As described above, it has been difficult for conventional polishing pads to have a high surface flatness, appropriate hardness, retention of the boricinder solution, and dischargeability of polishing debris.

本発明の目的は、従来の上記欠点を解消して高平坦の表
面と任意の硬度と良好なボリシンダ液の保持性、ポリシ
ング屑の排出性を有するポリシングバッド及びその製造
方法を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to eliminate the above-mentioned conventional drawbacks and provide a polishing pad having a highly flat surface, arbitrary hardness, good retention of volocinder liquid, and discharge of polishing debris, and a method for manufacturing the same. .

〔課題を解決するための手段〕[Means to solve the problem]

本発明のポリシングパッドは、微細な粒状の樹脂が互い
に接合されて板状に固められ、その表面層に位置する樹
脂粒は平坦な面を持つ構造を有するものである。
The polishing pad of the present invention has a structure in which fine particles of resin are bonded to each other and solidified into a plate shape, and the resin particles located in the surface layer have a flat surface.

また本発明のポリシングパッドの製造方法は、微細な粒
状の熱可塑性樹脂を2枚の平板の間に充填し、上下から
圧力をかけながら該熱可塑性樹脂の軟化温度まで加熱し
て表面層を軟化させ、表面及び内部に空間のある焼結構
造を作るものである. 〔作用〕 本発明は、上述の構戒を取ることにより、従来技術の問
題点を解決した.すなわち、aSな粒状の樹脂を表面及
び内部に空間がある状態に固めた楕遣のポリシングパッ
ドにより、表面の平坦性、ボリシンダ液保−特性、ポリ
シング屑排出性を保つ.前記ポリシングパッドの製造方
法としては、2枚の平板間に粒状の熱可塑性樹脂を充填
し加熱、加圧することにより焼結構造を形成する。
In addition, the method for manufacturing the polishing pad of the present invention involves filling the space between two flat plates with finely granular thermoplastic resin, and heating the thermoplastic resin to its softening temperature while applying pressure from above and below to soften the surface layer. This creates a sintered structure with spaces on the surface and inside. [Operation] The present invention solves the problems of the prior art by taking the above-mentioned precautions. That is, by using an oval polishing pad made of solidified aS granular resin with spaces on the surface and inside, the flatness of the surface, the property of retaining the Boricinda liquid, and the ability to discharge polishing debris are maintained. As a method for manufacturing the polishing pad, a granular thermoplastic resin is filled between two flat plates, and a sintered structure is formed by heating and pressurizing the resin.

〔実施例〕〔Example〕

次に本発明の実施例について図面を参照して詳細に説明
する。
Next, embodiments of the present invention will be described in detail with reference to the drawings.

第1図は本発明の第1の実施例の模式断面図である。FIG. 1 is a schematic sectional view of a first embodiment of the present invention.

1はほぼ球状の形状を有する樹脂粒で、樹脂粒1は隣接
する樹脂粒1と結合部2で結合されるが、その間には十
分な空間を有する構造となっており、薄板状のポリシン
グパッドを構成する。そして表面層に位置する樹脂粒1
は平坦な面10を有している。
Reference numeral 1 denotes a resin grain having an approximately spherical shape. The resin grain 1 is connected to the adjacent resin grain 1 at a joining part 2, but the structure has a sufficient space between them, and a polishing pad in the form of a thin plate is formed. Configure. And resin particles 1 located in the surface layer
has a flat surface 10.

第2図は本発明のポリシングパッドの一実施例の表面状
態を示す走査型電子顕微鏡写真で、平均粒径100μm
のポリエチレン球を焼結して厚さ約3mmのポリシング
バッドを作成したものである。
Figure 2 is a scanning electron micrograph showing the surface condition of one embodiment of the polishing pad of the present invention, with an average particle size of 100 μm.
A polishing pad with a thickness of about 3 mm was made by sintering polyethylene balls.

第3図(a)〜(C)は本発明の第2の実施例のポリシ
ングパッドの作戒方法を説明するための断面図である. 高平坦面を有するステンレス製の上板3と下板4の間に
平均直径100μmのポリエチレン粒を充填して、第3
図(a)に示す様に厚さ約4mmの樹脂層5を形成する
FIGS. 3(a) to 3(C) are cross-sectional views for explaining a method of cleaning a polishing pad according to a second embodiment of the present invention. Polyethylene grains with an average diameter of 100 μm are filled between the upper plate 3 and lower plate 4 made of stainless steel, which have a highly flat surface.
As shown in Figure (a), a resin layer 5 having a thickness of about 4 mm is formed.

次に、第3図(b)に示す様に、樹脂の軟化温度:11
0℃まで加熱しながら、上下から厚さが約3mmになる
まで加圧して樹脂粒どうしを溶着させて樹脂層5を一体
化させる. 最後に第1図(C)に示すように、冷却してから上板3
と下板4を剥離して一体化した樹脂層5を取り出す。
Next, as shown in Figure 3(b), the softening temperature of the resin: 11
While heating to 0° C., pressure is applied from above and below until the thickness becomes about 3 mm to weld the resin particles together and integrate the resin layer 5. Finally, as shown in Figure 1 (C), after cooling the upper plate 3
Then, the lower plate 4 is peeled off and the integrated resin layer 5 is taken out.

この様にして作成されたポリシングパッドは第1図に示
したように、樹脂粒1が溶着して一体化するとともに、
表面層の樹脂粒1は上,板3及び下板4に押し潰されて
平坦な面を有する。
As shown in FIG. 1, the polishing pad created in this way has the resin particles 1 welded and integrated, and
The resin particles 1 of the surface layer are crushed by the upper plate 3 and the lower plate 4 and have a flat surface.

なお、本実施例では100μm粒径のポリエチレンを使
用して厚さ3mmのポリシングパッドを作戒する場合に
ついて述べたが、樹脂の種類としては他にポリブロビレ
ン、ポリチルメタアクリレート、フッ素樹脂、ボリスチ
レン、が使用出来、様々な固さのポリシングバッドを作
ることが出来る.粒径、厚さ、空孔率についても作戒方
法から明らかな様に広い範囲の条件においてポリシング
パッドを作戒することができる。
In this example, a case was described in which a polishing pad with a thickness of 3 mm was prepared using polyethylene with a particle size of 100 μm, but other types of resin include polybrobylene, polytyl methacrylate, fluororesin, polystyrene, can be used to create polishing pads of various hardnesses. As is clear from the method of preparation, the polishing pad can be prepared under a wide range of conditions regarding particle size, thickness, and porosity.

上記のポリシングパッドを使用してポリシング液として
コロイダルシリ力水溶液を用いて直径4インチのSiウ
エハを加工したところ、ポリウレタン発泡体ポリシング
パツドと同等の加工速度、表面粗さで、2μmの平坦性
を得ることができた。なお、従来のポリウレタン発泡体
のポリシングバッドでは平坦性は4〜5μmである.〔
発明の効果〕 以上説明したように本発明のポリシングパッドを使用し
てポリシングを行えば、高平坦な加工面を得る事ができ
る。また、本発明のポリシングバッドの作成方法を用い
ると、様々な粒径、硬度、空孔率が得られ、発泡ポリウ
レタンパッドと同等の硬度で高剛性で加工屑の排出が容
易なポリシングパッドを容易に作成することが出来る。
When a Si wafer with a diameter of 4 inches was processed using the above polishing pad and a colloidal silica aqueous solution as the polishing liquid, the processing speed and surface roughness were the same as those of the polyurethane foam polishing pad, and a flatness of 2 μm was obtained. I was able to get Note that the flatness of conventional polishing pads made of polyurethane foam is 4 to 5 μm. [
Effects of the Invention] As explained above, when polishing is performed using the polishing pad of the present invention, a highly flat processed surface can be obtained. In addition, by using the polishing pad manufacturing method of the present invention, it is possible to obtain a polishing pad with various particle sizes, hardnesses, and porosity, and it is easy to create polishing pads that have the same hardness as polyurethane foam pads, high rigidity, and easy removal of processing waste. can be created.

更に、本発明のポリシングパッドは厚さ方向に均一な構
造を有しているため、表面の摩耗や損傷が生じてもドレ
ッシングを行うことにより新品と同等の加工特性を得る
ことができる.この様に本発明のポリシングバッド及び
その製造方法を用いると、優れたポリシングパッドを得
ることが出来、ポリシング加工に対して極めて有効であ
る.
Furthermore, since the polishing pad of the present invention has a uniform structure in the thickness direction, even if the surface is worn or damaged, it is possible to obtain processing characteristics equivalent to those of a new pad by dressing it. As described above, by using the polishing pad and the method for manufacturing the same of the present invention, it is possible to obtain an excellent polishing pad, which is extremely effective for polishing processing.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の第1の実施例の模式断面図、第2図は
本発明のポリシングパッドの一実施例の表面状態を示す
走査型電子顕微鏡写真であり、ポリエチレン粒子の構造
を示す図、第3図(a)〜(C)は本発明の第2の実施
例のポリシングパッドの作成方法を説明するための断面
図である。 1・・・樹脂粒、2・・・結合部、3・・・上板、4・
・・下板、5・・・樹脂層、10・・・平坦な面。
FIG. 1 is a schematic sectional view of a first embodiment of the present invention, and FIG. 2 is a scanning electron micrograph showing the surface condition of an embodiment of the polishing pad of the present invention, and is a diagram showing the structure of polyethylene particles. , and FIGS. 3(a) to 3(c) are cross-sectional views for explaining a method of manufacturing a polishing pad according to a second embodiment of the present invention. DESCRIPTION OF SYMBOLS 1...Resin grain, 2...Joining part, 3...Top plate, 4...
... Lower plate, 5... Resin layer, 10... Flat surface.

Claims (1)

【特許請求の範囲】 1、半導体材料や光学材料をポリシング加工により高平
坦に加工する場合に用いるポリシングパッドに於いて、
微細な粒状の樹脂が互いに接合されて板状に固められ、
その表面層に位置する樹脂粒は平坦な面を持つ構造を有
することを特徴とするポリシングパッド。 2、微細な粒状の熱可塑性樹脂を2枚の平板の間に充填
し、上下から圧力をかけながら該熱可塑性樹脂の軟化温
度まで加熱して表面層を軟化させ、表面及び内部に空間
のある焼結構造を作ることを特徴とするポリシングパッ
ドの製造方法。
[Claims] 1. In a polishing pad used when polishing a semiconductor material or optical material to make it highly flat,
Fine particles of resin are joined together and solidified into a plate shape,
A polishing pad characterized in that resin grains located in the surface layer have a structure with a flat surface. 2. Fill the space between two flat plates with finely granular thermoplastic resin, and heat it to the softening temperature of the thermoplastic resin while applying pressure from above and below to soften the surface layer and create a space on the surface and inside. A method for manufacturing a polishing pad characterized by creating a sintered structure.
JP1233674A 1989-09-07 1989-09-07 Polishing pad and manufacture thereof Pending JPH0398759A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1233674A JPH0398759A (en) 1989-09-07 1989-09-07 Polishing pad and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1233674A JPH0398759A (en) 1989-09-07 1989-09-07 Polishing pad and manufacture thereof

Publications (1)

Publication Number Publication Date
JPH0398759A true JPH0398759A (en) 1991-04-24

Family

ID=16958758

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1233674A Pending JPH0398759A (en) 1989-09-07 1989-09-07 Polishing pad and manufacture thereof

Country Status (1)

Country Link
JP (1) JPH0398759A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998047662A1 (en) * 1997-04-18 1998-10-29 Cabot Corporation Polishing pad for a semiconductor substrate
US6117000A (en) * 1998-07-10 2000-09-12 Cabot Corporation Polishing pad for a semiconductor substrate
US6126532A (en) * 1997-04-18 2000-10-03 Cabot Corporation Polishing pads for a semiconductor substrate
JP2009051002A (en) * 2007-08-16 2009-03-12 Rohm & Haas Electronic Materials Cmp Holdings Inc Interconnected multi-element grid polishing pad
JP2011088274A (en) * 2011-01-05 2011-05-06 Nitta Haas Inc Polishing pad

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998047662A1 (en) * 1997-04-18 1998-10-29 Cabot Corporation Polishing pad for a semiconductor substrate
US6062968A (en) * 1997-04-18 2000-05-16 Cabot Corporation Polishing pad for a semiconductor substrate
US6126532A (en) * 1997-04-18 2000-10-03 Cabot Corporation Polishing pads for a semiconductor substrate
US6117000A (en) * 1998-07-10 2000-09-12 Cabot Corporation Polishing pad for a semiconductor substrate
JP2009051002A (en) * 2007-08-16 2009-03-12 Rohm & Haas Electronic Materials Cmp Holdings Inc Interconnected multi-element grid polishing pad
KR101483306B1 (en) * 2007-08-16 2015-01-15 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 Interconnected-multi-element-lattice polishing pad
JP2011088274A (en) * 2011-01-05 2011-05-06 Nitta Haas Inc Polishing pad

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