JPH0384043A - Polycarbonate molded body coated with silicon oxide and its production - Google Patents
Polycarbonate molded body coated with silicon oxide and its productionInfo
- Publication number
- JPH0384043A JPH0384043A JP1221086A JP22108689A JPH0384043A JP H0384043 A JPH0384043 A JP H0384043A JP 1221086 A JP1221086 A JP 1221086A JP 22108689 A JP22108689 A JP 22108689A JP H0384043 A JPH0384043 A JP H0384043A
- Authority
- JP
- Japan
- Prior art keywords
- silicon dioxide
- group
- layer
- coating
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 269
- 239000004417 polycarbonate Substances 0.000 title claims abstract description 73
- 229920000515 polycarbonate Polymers 0.000 title claims abstract description 73
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 229910052814 silicon oxide Inorganic materials 0.000 title description 2
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 130
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 130
- 238000000576 coating method Methods 0.000 claims abstract description 66
- 239000011248 coating agent Substances 0.000 claims abstract description 63
- 150000003377 silicon compounds Chemical class 0.000 claims abstract description 40
- 239000002253 acid Substances 0.000 claims abstract description 17
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 17
- 125000003277 amino group Chemical group 0.000 claims abstract description 17
- 238000010030 laminating Methods 0.000 claims abstract description 6
- 125000004183 alkoxy alkyl group Chemical group 0.000 claims abstract description 5
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims abstract description 5
- 239000007788 liquid Substances 0.000 claims description 24
- 239000000243 solution Substances 0.000 claims description 23
- 239000007864 aqueous solution Substances 0.000 claims description 18
- 125000004432 carbon atom Chemical group C* 0.000 claims description 13
- 238000001035 drying Methods 0.000 claims description 8
- 125000000962 organic group Chemical group 0.000 claims description 7
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 239000000460 chlorine Substances 0.000 claims description 3
- 125000003700 epoxy group Chemical group 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 125000001424 substituent group Chemical group 0.000 claims description 3
- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims 8
- 125000002777 acetyl group Chemical group [H]C([H])([H])C(*)=O 0.000 claims 3
- 239000000126 substance Substances 0.000 claims 2
- 239000011247 coating layer Substances 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 107
- 239000000758 substrate Substances 0.000 abstract description 38
- 229920002554 vinyl polymer Polymers 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 58
- 239000011521 glass Substances 0.000 description 31
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 27
- 238000001556 precipitation Methods 0.000 description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 20
- 230000000052 comparative effect Effects 0.000 description 18
- 229920003023 plastic Polymers 0.000 description 17
- 239000004033 plastic Substances 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 14
- 229920000298 Cellophane Polymers 0.000 description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- 239000002390 adhesive tape Substances 0.000 description 8
- 239000012295 chemical reaction liquid Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 238000009835 boiling Methods 0.000 description 6
- 239000012153 distilled water Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000007602 hot air drying Methods 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 4
- 239000004327 boric acid Substances 0.000 description 4
- 238000007598 dipping method Methods 0.000 description 4
- 239000012456 homogeneous solution Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000007865 diluting Methods 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 150000003961 organosilicon compounds Chemical class 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 108010009736 Protein Hydrolysates Proteins 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 239000008119 colloidal silica Substances 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- LRCFXGAMWKDGLA-UHFFFAOYSA-N dioxosilane;hydrate Chemical compound O.O=[Si]=O LRCFXGAMWKDGLA-UHFFFAOYSA-N 0.000 description 2
- 238000007606 doctor blade method Methods 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 230000008092 positive effect Effects 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- OXYZDRAJMHGSMW-UHFFFAOYSA-N 3-chloropropyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)CCCCl OXYZDRAJMHGSMW-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- CONKBQPVFMXDOV-QHCPKHFHSA-N 6-[(5S)-5-[[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]methyl]-2-oxo-1,3-oxazolidin-3-yl]-3H-1,3-benzoxazol-2-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C[C@H]1CN(C(O1)=O)C1=CC2=C(NC(O2)=O)C=C1 CONKBQPVFMXDOV-QHCPKHFHSA-N 0.000 description 1
- 229910002012 Aerosil® Inorganic materials 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 125000003668 acetyloxy group Chemical group [H]C([H])([H])C(=O)O[*] 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000005083 alkoxyalkoxy group Chemical group 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- WOXXJEVNDJOOLV-UHFFFAOYSA-N ethenyl-tris(2-methoxyethoxy)silane Chemical compound COCCO[Si](OCCOC)(OCCOC)C=C WOXXJEVNDJOOLV-UHFFFAOYSA-N 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 235000013305 food Nutrition 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- MQWFLKHKWJMCEN-UHFFFAOYSA-N n'-[3-[dimethoxy(methyl)silyl]propyl]ethane-1,2-diamine Chemical compound CO[Si](C)(OC)CCCNCCN MQWFLKHKWJMCEN-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012785 packaging film Substances 0.000 description 1
- 229920006280 packaging film Polymers 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- YZVRVDPMGYFCGL-UHFFFAOYSA-N triacetyloxysilyl acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)=O)OC(C)=O YZVRVDPMGYFCGL-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- 238000007601 warm air drying Methods 0.000 description 1
- 230000002087 whitening effect Effects 0.000 description 1
Landscapes
- Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
- Laminated Bodies (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明はポリカーボネート成形体の表面を耐久性に優れ
た二酸化珪素被膜で被覆したプラスチック成形体および
その製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a plastic molded article whose surface is coated with a highly durable silicon dioxide coating, and a method for producing the same.
[従来の技術]
プラスチック成形体にSiO,SiO2等の酸化珪素を
被覆することによってプラスチックのガス透過率を低下
させる手法は、従来より、食品包装用フィルム(例えば
特開昭53−12953)或いはディスク基板(例えば
特開昭58−32238)等に応用されている。[Prior Art] A method of reducing the gas permeability of plastic by coating a plastic molded body with silicon oxide such as SiO, SiO2, etc. has conventionally been applied to food packaging films (for example, Japanese Patent Laid-Open No. 53-12953) or discs. It is applied to substrates (for example, Japanese Patent Laid-Open No. 58-32238).
これらの成膜法には通常、蒸着、スパッタ等の真空法が
採用されている。Vacuum methods such as vapor deposition and sputtering are usually employed as these film forming methods.
一方・二酸化珪素被膜の製造方法としては、これら蒸着
、スパッタ等の手法の他に、二酸化珪素の過飽和状態に
ある珪弗化水素酸水溶液に基材を浸漬して基材表面に二
酸化珪素被膜を形成する方法(以後「析出法」と略称す
る)が知られている(例えば特開昭62−20876)
。On the other hand, as a method for producing a silicon dioxide film, in addition to these methods such as vapor deposition and sputtering, a silicon dioxide film is formed on the surface of the base material by immersing the base material in an aqueous solution of hydrosilicofluoric acid that is supersaturated with silicon dioxide. A method for forming the oxide (hereinafter abbreviated as "precipitation method") is known (for example, JP-A No. 62-20876).
.
また、プラスチック成形体特にポリカーボネート成形体
に析出法によって二酸化珪素被膜を形成する方法に間し
ては、特開昭61−12734に示される、有機珪素化
合物、それらの加水分解物及びコロイダルシリカ等の珪
素化合物からなる第1次被膜用組成物にアミノ基を有す
る珪素化合物を含有させた組成物を被覆硬化させて第1
次被膜とした後、析出法で第1次被膜上に二酸化珪素被
膜を形成させる方法が知られている(例えば特開平1−
132640)。Furthermore, a method of forming a silicon dioxide film on a plastic molded body, particularly a polycarbonate molded body, by a precipitation method is disclosed in JP-A-61-12734, in which organic silicon compounds, their hydrolysates, colloidal silica, etc. A first coating composition comprising a silicon compound containing a silicon compound having an amino group is coated and cured.
A method is known in which a silicon dioxide film is formed on the first film by a precipitation method after forming a second film (for example, in Japanese Patent Application Laid-Open No.
132640).
[発明が解決しようとする課題]
プラスチック成形体の表面に従来のM着、スパッタ等の
真空法によって二酸化珪素被膜を形成する場合、
■ プラスチック成形体からガスが発生するため真空に
するまで長時間要する。[Problems to be solved by the invention] When forming a silicon dioxide film on the surface of a plastic molded body by conventional vacuum methods such as M deposition or sputtering, ■ gas is generated from the plastic molded body, so it takes a long time to vacuum. It takes.
■ そのため、良質な膜が得られにくい。■ Therefore, it is difficult to obtain a high-quality film.
■ プラスチック基板或いはフィルムの両面に同時成膜
することが不可能である。(2) It is impossible to simultaneously form a film on both sides of a plastic substrate or film.
■ 得られた膜は、樹脂基板との密着性に乏しく温湿度
負荷により剥離しやすい。(2) The obtained film has poor adhesion to the resin substrate and is easily peeled off due to temperature and humidity loads.
等の問題点があった。・
これに対し、析出法によれば、真空法による二酸化珪素
成膜法に比較して、
■ プラスチックの変形温度以下で成膜が可能である。There were problems such as. - On the other hand, according to the precipitation method, compared to the silicon dioxide film formation method using the vacuum method, (1) film formation is possible at a temperature below the deformation temperature of plastic.
■ 表裏両面に同時成膜が可能である。■ Simultaneous film formation is possible on both the front and back sides.
■ 得られる二酸化珪素被膜は、焼成せずとも緻密性に
富む。■ The resulting silicon dioxide film is highly dense even without firing.
等の効果が奏され、先述のスパッタ或いは蒸着法の問題
点をある程度解決し得ることが期待される。It is expected that the above-mentioned effects will be achieved and the problems of the above-mentioned sputtering or vapor deposition methods will be solved to some extent.
しかしながら、析出法でプラスチック成形体に均一かつ
透明で強固な付着力を持つ二酸化珪素被膜を得るために
は、有機珪素化合物、それらの加水分解物及びコロイダ
ルシリカ等の珪素化合物を被覆硬化させて得られる第1
次被膜を、0.5〜30μmと厚くする必要がある。こ
のため■ 温湿度負荷により“クラック”や′6割れ”
を生じる。However, in order to obtain a silicon dioxide film that is uniform, transparent, and has strong adhesion to a plastic molded body using the precipitation method, it is necessary to coat and harden silicon compounds such as organosilicon compounds, their hydrolysates, and colloidal silica. The first to be
It is necessary to make the subsequent coating as thick as 0.5 to 30 μm. For this reason, ■ "Cracks" and '6 cracks' occur due to temperature and humidity loads.
occurs.
■ プラスチックフィルムに応用した場合には、“曲げ
”や“折り”に対して融通がきかず、膜剥離が起こる。■ When applied to plastic films, there is no flexibility in bending or folding, resulting in film peeling.
■ ディスク基板に応用した場合には、第1次被膜形成
によって、その表面形状が損なわれる。(2) When applied to a disk substrate, the surface shape is damaged by the primary film formation.
等の問題点があっk。There are problems such as.
プラスチックをポリカーボネートに限定すれば、第1次
被膜にアミノ基を有する珪素化合物を含有させることに
よって、第1次被膜の膜厚をlOnm以下に薄くシても
析出法によって耐久性に優れた二酸化珪素被膜を得るこ
とが可能である。これによって、フィルム状の成形体に
も応用が可能となり、また、微細表面を有する成形体に
もその°表面形状を損なうことなく二酸化珪素被覆が可
能となった。If the plastic is limited to polycarbonate, silicon dioxide with excellent durability can be produced by precipitation method even if the thickness of the primary coating is reduced to less than 10 nm by containing a silicon compound having an amino group in the primary coating. It is possible to obtain a coating. This has made it possible to apply the method to film-like molded bodies, and it has also become possible to coat molded bodies with fine surfaces with silicon dioxide without damaging the surface shape.
しかし、
■ ポリカーボネート基板及びガラス基板に析出法で同
時に二酸化珪素被覆を行なっても、ポリカーボネート上
に得られる二酸化珪素被膜はガラス上に得られるそれよ
りも膜厚が薄くなる場合があること。However, (1) Even if a polycarbonate substrate and a glass substrate are simultaneously coated with silicon dioxide by a precipitation method, the silicon dioxide coating obtained on polycarbonate may be thinner than that obtained on glass.
■ 析出法の条件によっては、二酸化珪素被膜中に二酸
化珪素の粒子が取り込まれ、不均一に白濁した部分が観
察されたり、二酸化珪素被膜の膜質を低下させる原因と
なる。(2) Depending on the conditions of the precipitation method, silicon dioxide particles may be incorporated into the silicon dioxide film, causing uneven cloudy areas to be observed or deterioration of the film quality of the silicon dioxide film.
といった問題点があった。There were some problems.
[課題を解決するための手段及び作用]本発明は、上記
従来の問題点を解決し、プラスチック成形体として特に
ポリカーボネート成形体を、耐久性に優れた均一厚さの
二酸化珪素被膜で覆うことによって、プラスチックとガ
ラスの長所を兼ね備えた基体を製造する方法を提供する
ものである。[Means and effects for solving the problems] The present invention solves the above conventional problems by covering a plastic molded product, especially a polycarbonate molded product, with a highly durable and uniformly thick silicon dioxide film. , provides a method for manufacturing a substrate that combines the advantages of plastic and glass.
本発明は、
a)ポリカーボネート成形体、
b)一般式(1)で示されるアミノ基を有する珪素化合
物の1種または2種以上を被覆硬化してなる層、
211
R’@−3i−(OR’)a−m−Il (1)r
式中R1はアミノ基を含んだ有機基、R2は11炭素数
1〜6のアルキル基R3は炭素数1〜116のアルキル
基、アルコキシアルキル基、m11は1〜3の整数、n
はOまたは1〜2の整数1’−thだしm+n≦3
」C)一般式(n)で示される加
水分解性置換基の三置換または四置換珪素化合物の1種
または2種以上の部分加水分解物を被覆硬化してなる層
、および
R’n−S i −(OR’) a−n (II)
r 式中R4は炭素数1〜6のアルキル基、ビニ11ル
基、エポキシ基、メルカプト基、フッ素ま1または塩素
を有する有機基R8は炭素数1〜611のアルキル基、
アコキシアルキル基、アセチILル基、nは0またはl
」d〉前記C)層に二酸化珪素の
過飽和状態の珪弗化水素酸水溶液を接触させて形成させ
た二酸化珪素被膜
をa)、b)、C)およびd〉の順に積層してなる二酸
化珪素被覆ポリカーボネート成形体を要旨とするもので
ある。The present invention comprises a) a polycarbonate molded article, b) a layer formed by coating and curing one or more silicon compounds having an amino group represented by the general formula (1), 211 R'@-3i-(OR ') a-m-Il (1) r
In the formula, R1 is an organic group containing an amino group, R2 is an alkyl group having 11 to 6 carbon atoms, R3 is an alkyl group or alkoxyalkyl group having 1 to 116 carbon atoms, m11 is an integer of 1 to 3, and n
is O or an integer from 1 to 2, 1'-th, and m+n≦3
"C) A layer formed by coating and curing one or more partial hydrolysates of trisubstituted or tetrasubstituted silicon compounds of the hydrolyzable substituent represented by general formula (n), and R'n-S i - (OR') a-n (II)
r In the formula, R4 is an alkyl group having 1 to 6 carbon atoms, a vinyl 11 group, an epoxy group, a mercapto group, an organic group having fluorine or chlorine, R8 is an alkyl group having 1 to 611 carbon atoms,
Acoxyalkyl group, acetyyl group, n is 0 or l
"d> Silicon dioxide formed by laminating in the order of a), b), C) and d> a silicon dioxide film formed by contacting the layer C) with a supersaturated aqueous solution of silicon dioxide in hydrosilicofluoric acid The gist is a coated polycarbonate molded article.
一般に析出法によって直接プラスチック成形体表面に二
酸化珪素膜を被覆する場合、珪弗化水素酸水溶液とプラ
スチックの反応性や濡れ性が悪いため、付着力が弱く、
また、ムラのある膜しか得られないが、プラスチック成
形体に予め有機珪素化合物を被覆硬化させておけば、表
面のシラノール基が珪弗化水素酸水溶液中の珪素成分と
の結合の場となる丸め、析出法によって得られる二酸化
珪素膜の付着力及びムラを改善することが可能である。In general, when a silicon dioxide film is directly coated on the surface of a plastic molded body by the precipitation method, the adhesion is weak due to the poor reactivity and wettability of the hydrosilicofluoric acid aqueous solution and the plastic.
In addition, only an uneven film can be obtained, but if the plastic molded body is coated with an organic silicon compound and cured in advance, the silanol groups on the surface will become a place for bonding with the silicon component in the aqueous solution of hydrosilicofluoric acid. It is possible to improve the adhesion and unevenness of silicon dioxide films obtained by rolling and precipitation methods.
しかし、有機珪素化合物を被覆硬化させて得られる第1
次被膜の膜厚を数十nm以下と薄くする場合には、析出
法によってムラのない均一な膜であって、付着力の強固
な二酸化珪素被膜を得るには、プラスチックの種類によ
って有機珪素化合物を選択する必要がある。However, the first method obtained by coating and curing an organosilicon compound
When reducing the thickness of the next coating to several tens of nanometers or less, it is necessary to use an organic silicon compound depending on the type of plastic to obtain a silicon dioxide coating that is uniform and has strong adhesion using a precipitation method. need to be selected.
本発明者らは、ポリカーボネート成形体に対して好適な
、第1次被膜形成のための有機珪素化合物について鋭意
研究を重ねた結果、付着力強固な二酸化珪素被膜を得る
ためには、上記−数式(1)で示されるアミノ基を有す
る珪素化合物が最適であり、また、ムラのない均一な二
酸化珪素被膜を得るためには、上記−数式(II)で示
される珪素化合物の加水分解物が最適であることを見い
だし、本発明を完成させた。The present inventors have conducted extensive research on organosilicon compounds suitable for forming a primary coating on polycarbonate molded bodies, and have found that in order to obtain a silicon dioxide coating with strong adhesion, the following formula A silicon compound having an amino group represented by (1) is optimal, and a hydrolyzate of a silicon compound represented by formula (II) above is optimal in order to obtain an even and uniform silicon dioxide coating. The present invention was completed based on this discovery.
以下に本発明の詳細な説明する。The present invention will be explained in detail below.
本発明において、b)層の形成に用いろハる一般式(1
)で示されるアミノ基を有する珪素化合物としては、γ
−アミノプロピルトリエトキシシラン、N−(β−アミ
ノエチル)−γ−アミノプロピルトリメトキシシラン、
N−(β−アミノエチル)−γ−アミノプロピルメチル
ジメトキシシラン等が挙げられる。In the present invention, the general formula (1) used for forming layer b)
) As a silicon compound having an amino group represented by γ
-aminopropyltriethoxysilane, N-(β-aminoethyl)-γ-aminopropyltrimethoxysilane,
Examples include N-(β-aminoethyl)-γ-aminopropylmethyldimethoxysilane.
これらの珪素化合物は、1種を単独で用いても、2種以
上を併用してもよい。These silicon compounds may be used alone or in combination of two or more.
また、C)層の形成に用いられる一般式(II)で示さ
れる珪素化合物としては、テトラメトキシシラン、テト
ラエトキシシラン、テトラアセトキシシラン、メチルト
リエトキシシラン、フェニルトリメトキシシラン、ビニ
ル(β−メトキシエトキシ)シラン、γ−クロロプロピ
ルトリメトキシシラン、γ−メルカプトプロピルトリメ
トキシシラン、γ−グリシドキシプロビルトリメトキシ
シラン、γ−メタクリロキシプロピルトリメトキシシラ
ンが挙げられる。これらの加水分解物とは、該−数式(
■)で示される珪素化合物中のアルコキシ基、アルコキ
シアルコキシ基、アセトキシ基の一部または全部が水酸
基で1換されたもの、更に、置換された水酸基同志が一
部自然に縮合されたものを含んでいる。これらの加水分
解物は、例えば、水及びアルコールのような混合溶媒中
で酸の存在下加水分解することによって容易に得ること
ができる。In addition, examples of the silicon compound represented by the general formula (II) used for forming layer C) include tetramethoxysilane, tetraethoxysilane, tetraacetoxysilane, methyltriethoxysilane, phenyltrimethoxysilane, vinyl (β-methoxysilane), ethoxy)silane, γ-chloropropyltrimethoxysilane, γ-mercaptopropyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-methacryloxypropyltrimethoxysilane. These hydrolysates are defined by the formula (
(2) Silicon compounds in which part or all of the alkoxy, alkoxyalkoxy, or acetoxy groups in the silicon compound are substituted with a hydroxyl group, as well as those in which some of the substituted hydroxyl groups are naturally condensed with each other. I'm here. These hydrolysates can be easily obtained, for example, by hydrolysis in a mixed solvent such as water and alcohol in the presence of an acid.
これらの加水分解物は、1種を単独で用いても2種以上
を併用してもよいが、2種以上を併用する場合には、−
数式(If)で示される珪素化合物を2種以上混合して
共加水分解したものの使用が好ましい。These hydrolysates may be used alone or in combination of two or more types, but when using two or more types in combination, -
It is preferable to use a co-hydrolyzed mixture of two or more silicon compounds represented by the formula (If).
本発明においては、上記−数式(1)で示されるアミノ
基を有する珪素化合物を1種または2種以上含む塗布液
をポリカーボネート成形体に塗布、乾燥することにより
b)層を形成するが、この塗布液は、アミノ基を有する
珪素化合物含有量が、10−3g+ol/、Q以上、1
0−’mol/、Q以下となるように各種溶媒に溶かし
て調整することが好ましい。In the present invention, the layer b) is formed by coating a polycarbonate molded body with a coating liquid containing one or more silicon compounds having an amino group represented by formula (1) above and drying it. The coating liquid has a silicon compound content having an amino group of 10-3 g+ol/, Q or more, 1
It is preferable to adjust it by dissolving it in various solvents so that it becomes 0-'mol/,Q or less.
10−3mol/ρ未満の塗布液を使用すると、析出法
によって得られる二酸化珪素被膜の付着強度の低下傾向
を示すので適当ではない、また、10−1−〇179を
越える濃度の塗布液を使用するとb)層の白化を招き易
くなるため適当ではない。It is not appropriate to use a coating liquid with a concentration of less than 10-3 mol/ρ, as the adhesion strength of the silicon dioxide coating obtained by the precipitation method tends to decrease. In this case, b) is not suitable because it tends to cause whitening of the layer.
上記b)層を形成させるためのコーティング方法として
は、通常行なわれている浸漬法、スピンコード法、ブロ
ーコート法、バーコーダ−法、ドクターブレード法、噴
霧法、リバースロールコータ−法、グラビアロールコー
タ−法等いずれも採用可能であり、コーテイング後40
℃以上基材の変形温度以下で乾燥し硬化させることによ
って耐久性、付着力に優れたb)層を得ることができる
。Coating methods for forming layer b) include the commonly used dipping method, spin code method, blow coat method, bar coder method, doctor blade method, spray method, reverse roll coater method, and gravure roll coater. - Any method can be adopted, and 40% after coating.
By drying and curing at a temperature above .degree. C. and below the deformation temperature of the base material, layer b) having excellent durability and adhesion can be obtained.
このようにしてポリカーボネート成形体上に得られるb
)層は、その膜厚の測定が困難であるが、ガラス基板(
例えば、通常の板ガラス、ソーダライムガラス等〉上に
同様な条件で被膜の作成を行なった場合に約1〜loo
nm程度の厚みを呈する。b obtained in this way on a polycarbonate molded body
) layer, although it is difficult to measure the film thickness, it is difficult to measure the thickness of the glass substrate (
For example, when a film is created under similar conditions on ordinary plate glass, soda lime glass, etc.
It has a thickness of about nm.
このようにしてb)Flを形成したポリカーボネート成
形体に前記−数式(If)で示される珪素化合物の1種
または2種以上の部分加水分解物を含む塗布液を塗布、
乾燥することによりc)Flを形成する。ここで、C〉
層を形成するのは、析出法による二酸化珪素被膜の成膜
性を向上するためである。 c)Flを形成せずb)
Nだけ形成したポリカーボネート成形体と、ガラス基板
に同時に析出法で二酸化珪素被覆を行なうと、ポリカー
ボネ−ト成形体上に得られる二酸化珪素被膜はガラス基
板上に得られるそれよりも膜厚が薄くなる場合がある。b) Applying a coating liquid containing one or more partial hydrolysates of silicon compounds represented by formula (If) to the polycarbonate molded body in which Fl has been formed;
Drying forms c) Fl. Here, C〉
The reason for forming the layer is to improve the film formability of the silicon dioxide film by the precipitation method. c) without forming Fl b)
When a polycarbonate molded body formed with only N and a glass substrate are simultaneously coated with silicon dioxide by a precipitation method, the silicon dioxide coating obtained on the polycarbonate molded body will be thinner than that obtained on the glass substrate. There are cases.
また、b)層のみ形成した状態で、析出法で成膜を
行なうと、二酸化珪素の過飽和状態にある珪弗化水素酸
水溶液の液面近傍に存在する二酸化珪素粒子を拾いやす
く、得られる二酸化珪素被膜にはこれらの粒子が取り込
まれ、不均一に白濁した部分が観察されたり、二酸化珪
素被膜の膜質を低下させる原因となる。In addition, if the deposition method is used to form a film with only the b) layer formed, the silicon dioxide particles present near the liquid surface of the aqueous silicofluoric acid solution, which is supersaturated with silicon dioxide, are likely to be picked up, and the resulting These particles are incorporated into the silicon film, causing non-uniform cloudy areas to be observed and deterioration of the quality of the silicon dioxide film.
C)層形成は析出法による二酸化珪素被覆前のポリカー
ボネート成形体の最表面をガラス表面に近づけて、この
様な欠点を解決するための措置であり、上記−数式(I
I)で示される珪素化合物を加水分解して使用しない限
り効果はない。C) Layer formation is a measure to solve such defects by bringing the outermost surface of the polycarbonate molded body before coating with silicon dioxide by the precipitation method to the glass surface, and is based on the above-mentioned formula (I
There is no effect unless the silicon compound represented by I) is hydrolyzed and used.
また使用される塗布液が一般式(II)で示される珪素
化合物の部分加水分解物をR’n S i Oz−nz
z換算にして10−3冒of/、Q未満になると、上記
欠点を解決させる効果が低下するため適当ではない。Further, the coating liquid used is a partial hydrolyzate of a silicon compound represented by the general formula (II).
If it is less than 10-3 of/, Q in terms of z, it is not suitable because the effect of solving the above-mentioned drawbacks will be reduced.
上記C)層を形成させるためのコーティング方法として
は、通常行なわれている浸漬法、スピンコード法、フロ
ーコート法、バーコーダ−法、ドクターブレード法、噴
霧法、リバースロールコータ−法、グラビアロールコー
タ−法等によって、上記b)層上にコーテイング後40
℃以上基材の変形温度以下で乾燥し硬化させることによ
り耐久性、付着力に優れたC)層が得られる。Coating methods for forming the above C) layer include the commonly used dipping method, spin code method, flow coat method, bar coder method, doctor blade method, spray method, reverse roll coater method, and gravure roll coater. - After coating on the above layer b) by a method etc.
By drying and curing at a temperature above .degree. C. and below the deformation temperature of the base material, a layer C) having excellent durability and adhesion can be obtained.
このようにして得られるC)層の最小膜厚は、ガラス基
板に同様な条件でC)層を複数回積層して1層あたりの
厚みを求めると約1nmである。The minimum thickness of the C) layer obtained in this way is approximately 1 nm when the thickness of each layer is determined by laminating the C) layer multiple times on a glass substrate under similar conditions.
なお、析出法のためのブライマーとしてb)層及びC)
層の二層構造とする代わりに、−数式(■)で示される
アミノ基を有する珪素化合物と、−数式(II)で示さ
れる珪素化合物の加水分解物を混合したものを用いると
白色沈澱が生じやすくなり好ましくない。In addition, b) layer and C) as a brimer for the precipitation method
Instead of having a two-layer structure, if a mixture of a silicon compound having an amino group represented by formula (■) and a hydrolyzate of a silicon compound represented by formula (II) is used, a white precipitate will form. This is not desirable as it tends to occur easily.
本発明においては、b)層及びC)層を形成したポリカ
ーボネート成形体を、次いで、二酸化珪素の過飽和状態
の珪弗化水素酸水溶液と接触させて、C)層上に二酸化
珪素被膜を形成する。In the present invention, the polycarbonate molded article on which the layers b) and C) have been formed is then brought into contact with a supersaturated aqueous solution of hydrosilicofluoric acid containing silicon dioxide to form a silicon dioxide film on the layer C). .
二酸化珪素の過飽和状態の珪弗化水素酸水溶液(以下、
「処理液」と略称する。〉としては、珪弗化水素酸水溶
液に二酸化珪素(シリカゲル、アエロジル、シリカガラ
ス、その他二酸化珪素含有物など〉を溶解させた後、水
または試薬(ホウ酸、塩化アルミニウム、金属アルミニ
ウム、その他)を添加するか処理液温度を上昇させる等
の手段で、二酸化珪素の過飽和状態としたものが使用さ
れる。A supersaturated silicofluoric acid aqueous solution of silicon dioxide (hereinafter referred to as
It is abbreviated as "processing liquid". > After dissolving silicon dioxide (silica gel, Aerosil, silica glass, other silicon dioxide-containing materials, etc.) in an aqueous solution of hydrosilicofluoric acid, water or a reagent (boric acid, aluminum chloride, metallic aluminum, etc.) is added. Silicon dioxide is brought into a supersaturated state by adding or raising the temperature of the processing solution.
本発明において、b)層及びC)層を形成しにポリカー
ボネート成形体と接触させる処理液の濃度としては、1
〜3+wol/、Qが好ましく、特に3Ilol/々よ
り濃い珪弗化水素酸水溶液に二酸化珪素を飽和させた後
、水で希釈して1〜3■of/jJの濃度としkものが
被膜形成速度が速く、効率よく被膜形成が行えるので望
ましい。In the present invention, the concentration of the treatment liquid that is brought into contact with the polycarbonate molded body to form the b) layer and the C) layer is 1
〜3+wol/, Q is preferable, and in particular, silicon dioxide is saturated in a hydrosilicofluoric acid aqueous solution having a concentration higher than 3Ilol/, and then diluted with water to obtain a concentration of 1 to 3μ/jJ.K is the film formation rate. This method is desirable because it allows for fast and efficient film formation.
また、該処理液は
(イ) 該成形体との接触時においても、■連続的にホ
ウ酸や塩化アルミニウム等の添加剤水溶液が添加、混合
されている、■アルミニウム等の金属が溶解混合されて
いる、■温度を一時冷却して二酸化珪素を飽和させ、そ
の後再び温度を上昇させる等の手段によって常時過飽和
度が維持されている処理液であり、
(ロ) 1分間あkり処理液全量の3%以上の処理液が
フィルターでろ過され戻される処理液である、
ことが好ましい。In addition, the treatment liquid (a) also has the following properties when in contact with the compact: (1) an aqueous solution of additives such as boric acid or aluminum chloride is continuously added and mixed; and (2) metals such as aluminum are dissolved and mixed. ■It is a processing liquid whose supersaturation level is maintained at all times by means such as temporarily cooling the temperature to saturate silicon dioxide, and then raising the temperature again. It is preferable that 3% or more of the treatment liquid is the treatment liquid that is filtered through a filter and returned.
ここで、接触時において、■連続的にホウ酸等の水溶液
を添加混合したり、■アルミニウム等の金属を溶解混合
するのは、被膜の形成速度を向上させるために好ましい
、ホウ酸の場合、その添加量は、処理液中の珪弗化水素
酸1wolに対して5X 10−’sol/Hr 〜I
X 10−”mol/Hrの範囲が好ましく、また、
金属アルミニウムを溶解させる場合その溶解量は、処理
液中の珪弗化水素酸1 molに対してI X 10”
mol/Hr 〜4X 10−3mol/Hrの範囲
が好ましい。At the time of contact, it is preferable to (1) continuously add and mix an aqueous solution such as boric acid or (2) dissolve and mix a metal such as aluminum in order to improve the rate of film formation. In the case of boric acid, The amount added is 5X 10-'sol/Hr to 1 vol of hydrosilicic acid in the treatment solution
The range of X 10-”mol/Hr is preferable, and
When metallic aluminum is dissolved, the amount dissolved is I x 10" per 1 mol of hydrosilicic acid in the processing solution.
The range of mol/Hr to 4X 10-3 mol/Hr is preferable.
また、3%以上の処理液を循環させることは均質な被膜
を連続的に得るkめに効果的であり、フィルターで処理
液をろ過することは凹凸形状のない被膜を得るために好
ましい。Further, circulating the treatment liquid at a concentration of 3% or more is effective for continuously obtaining a homogeneous coating, and filtering the treatment liquid with a filter is preferable for obtaining a coating without unevenness.
処理液を浸漬槽に入れて該成形体と接触させる場合には
、浸漬中の該成形体表面において該処理液が層流となっ
て流れるようにすることがムラのない均質な被膜を得る
ために効果的である。When the treatment liquid is placed in a dipping tank and brought into contact with the molded body, it is necessary to allow the treatment liquid to flow in a laminar flow on the surface of the molded body during immersion in order to obtain an even and homogeneous coating. effective.
本発明において使用した二酸化珪素被MfM造装置の系
統図を第1図に示す。FIG. 1 shows a system diagram of the silicon dioxide-covered MfM manufacturing apparatus used in the present invention.
第1図において、浸漬槽は外槽lと内槽2からなり内槽
lと外槽2の間には水3が満たしである。In FIG. 1, the immersion tank consists of an outer tank 1 and an inner tank 2, and the space between the inner tank 1 and the outer tank 2 is filled with water 3.
この水は一定温度になるようにヒーター4で加熱されか
つ温度分布均一化のため攪拌機6で攪拌されている。This water is heated with a heater 4 to maintain a constant temperature and is stirred with a stirrer 6 to make the temperature distribution uniform.
内槽2は前部6、中部7、後部8からなり、各部には、
工業用シリカゲル粉末を二酸化珪素の供給源として二酸
化珪素を溶解飽和させた所定濃度の珪弗化水素酸水溶液
6.51が満たしである。The inner tank 2 consists of a front part 6, a middle part 7, and a rear part 8, and each part includes:
It is filled with an aqueous solution of hydrosilicofluoric acid of a predetermined concentration of 6.5 liters, which is made by dissolving and saturating silicon dioxide using industrial silica gel powder as a source of silicon dioxide.
ここで、三方コック13aS 13a’ 13b。Here, the three-way cock 13aS 13a' 13b.
13b’を調節し、循環ボン112aを作動させ内槽後
部8の反応液を一定量づつくみ出してフィルター11a
でろ過し内槽6へ戻す処理液循環を開始した。13b' and operate the circulation bong 112a to pump out a certain amount of the reaction liquid from the rear part 8 of the inner tank and pass it through the filter 11a.
Circulation of the treated liquid, which was filtered and returned to the inner tank 6, was started.
ここで、フィルター11aのメツシュは1.5μmであ
り、反応液循環流量を520mJ7/分く反応液全量が
6.51であるので循環流量は約8%/分である)と設
定した。Here, the mesh of the filter 11a was 1.5 μm, and the reaction liquid circulation flow rate was set to 520 mJ7/min (since the total amount of the reaction liquid was 6.51, the circulation flow rate was about 8%/min).
その後、縦50mm、横50mm、厚さ3mmのA1板
15を3枚、内槽後部8に浸漬し攪拌機16を作動させ
AN板の溶解を促進させた。Thereafter, three A1 plates 15 each having a length of 50 mm, a width of 50 mm, and a thickness of 3 mm were immersed in the rear part 8 of the inner tank, and the stirrer 16 was activated to promote dissolution of the AN plates.
この状態で16〜30時間保持することによって反応液
は適度な二酸化珪素飽和度を有する(二酸化珪素成膜可
能な)処理液となった。By maintaining this state for 16 to 30 hours, the reaction solution became a processing solution having an appropriate degree of silicon dioxide saturation (capable of forming a silicon dioxide film).
反応液が二酸化珪素成膜能力を有するようになると、反
応液中でも二酸化珪素が粒子となって発生し、成長し、
やがてフィルター11aでろ過され、フィルターの目詰
まりの原因となる。Ap添加後30〜50時間経過した
時点でこの傾向が見られ循環量の低下を招いた。そこで
、配管及びフィルター11a内の反応液を内槽2に戻し
た後、反応液の循環を内槽後部8→フイルタ一11b→
循環ポンプ12a→内槽前部6となるように三方コック
13a、13a’ 13b、13b’を設定し、反応
液の循環を再び開始したところ、反応液の循環量は再び
520 m p /分に回復した。ここで、フィルター
11bのメツシュはフィルター11aと同じく1.6μ
mである・
この状態で循環ポンプ12bを作動させ、5%弗化水素
酸水溶液10が洗浄液槽9→フイルター11a→循環ポ
ンプ12b→洗浄液槽9の順で循環することによって目
詰まりしにフィルター11aを洗浄再生した。When the reaction solution has the ability to form a silicon dioxide film, silicon dioxide is generated in the form of particles in the reaction solution and grows.
Eventually, it is filtered by the filter 11a, causing the filter to become clogged. This tendency was observed 30 to 50 hours after the addition of Ap, resulting in a decrease in the amount of circulation. Therefore, after returning the reaction liquid in the piping and filter 11a to the inner tank 2, the reaction liquid is circulated from the rear part of the inner tank 8 to the filter 11b.
When the three-way cocks 13a, 13a', 13b, and 13b' were set so that the circulation pump 12a → the front part 6 of the inner tank and the circulation of the reaction liquid was restarted, the circulation rate of the reaction liquid was again 520 m p /min. I have recovered. Here, the mesh of the filter 11b is 1.6μ like the filter 11a.
In this state, the circulation pump 12b is operated, and the 5% hydrofluoric acid aqueous solution 10 is circulated in the order of cleaning liquid tank 9 → filter 11a → circulation pump 12b → cleaning liquid tank 9, thereby preventing clogging of the filter 11a. was washed and regenerated.
以上の手順に従って、フィルターに目詰まり傾向が認め
られた都度三方コック13a、13a’13b、13b
’を調節してフィルターを切り替える操作を行ないなが
ら、ガラスまたは各種珪素化合物で被覆したポリカーボ
ネート成形体を内槽中部7に所定時間浸漬することによ
って二酸化珪素被膜を連続して得ることができた。According to the above procedure, each time the filter is found to have a clogging tendency, the three-way cocks 13a, 13a' 13b, 13b
A silicon dioxide coating could be continuously obtained by immersing a polycarbonate molded body coated with glass or various silicon compounds in the inner tank middle part 7 for a predetermined time while adjusting the temperature and switching the filter.
[実施例]
以下、実施例、比較例及び参考例を挙げて本発明の詳細
な説明するが、本発明はその要旨を越えない限り、以下
の実施例に限定されるものではな実施例I
N−(β−アミノエチル)−γ−アミノプロピルトリメ
トキシシラン0.5gをイソプロピルアルコール250
mρに溶解した溶液(珪素化合物濃度約9X 10−’
a+ol/J )の浴に縦、横各100mm、厚さ1m
mのポリカーボネート平板を垂直に浸漬し15cm/分
の速度で引き上げた後50℃の温風乾燥炉で30分間乾
燥してb)層を形成した。上記操作と全く同様の条件で
ガラス基板にb)層を104積層したところその膜厚は
およそ50nmであった。[Examples] Hereinafter, the present invention will be described in detail with reference to Examples, Comparative Examples, and Reference Examples. However, the present invention is not limited to the following Examples unless it exceeds the gist thereof. Add 0.5 g of N-(β-aminoethyl)-γ-aminopropyltrimethoxysilane to 250 g of isopropyl alcohol.
Solution dissolved in mρ (silicon compound concentration approximately 9X 10-'
a + ol/J ) bath, length and width 100 mm each, thickness 1 m
A polycarbonate flat plate of m was immersed vertically, pulled up at a speed of 15 cm/min, and then dried in a hot air drying oven at 50° C. for 30 minutes to form layer b). When 104 layers b) were laminated on a glass substrate under the same conditions as the above operation, the film thickness was approximately 50 nm.
テトラエトキシシラン100gと蒸留水100gを混合
しながら、0.1規定塩酸0.5m、Qを添加しその後
30分間攪拌して均一溶液を得た。この加水分解溶液2
gを250muのイソプロピルアルコールで希釈した溶
液(S i 02換算固形分濃度約1.9 X 10”
mol/p )に上記b)Nを形成したポリカーボネー
ト平板を漫潰し15cm/分の速度で引き上げた後50
℃の温風乾燥炉で30分間乾燥してb)層上にC)層を
形成した。上記操作と全く同様の条件でガラス基板にC
)層を10層積層しkところその膜厚はおよそ50nm
であった。While mixing 100 g of tetraethoxysilane and 100 g of distilled water, 0.5 m of 0.1N hydrochloric acid, Q, was added, followed by stirring for 30 minutes to obtain a homogeneous solution. This hydrolysis solution 2
A solution prepared by diluting g with 250 mu of isopropyl alcohol (S i 02 equivalent solid content concentration approximately 1.9 x 10"
After crushing the polycarbonate plate on which the above b) N was formed in mol/p) and pulling it up at a speed of 15 cm/min,
It was dried for 30 minutes in a warm air drying oven at 0.degree. C. to form layer C) on layer b). C on the glass substrate under exactly the same conditions as the above operation.
) layers are stacked, and the film thickness is approximately 50 nm.
Met.
得られたb)層C)層をこの順に積層したポリカーボネ
ート平板をガラス基板とともに、第1図に示す二酸化珪
素被膜製造装置の内槽中部7に浸漬後80分間保持する
ことによって二酸化珪素被膜を形成した。A silicon dioxide film is formed by dipping the polycarbonate flat plate obtained by laminating layers b) and c) in this order together with a glass substrate in the inner tank middle part 7 of the silicon dioxide film manufacturing apparatus shown in FIG. 1 for 80 minutes. did.
なお、二酸化珪素被膜製造装置内を循環する珪弗化水素
酸水溶液の温度は2.5*ol/j:であり、ヒーター
4を調節して成膜時の温度が35℃となるようにした。In addition, the temperature of the hydrosilicofluoric acid aqueous solution circulating in the silicon dioxide coating production apparatus was 2.5*ol/j:, and the heater 4 was adjusted so that the temperature during film formation was 35 ° C. .
上記の通りポリカーボネート平板及びガラス基板上に得
られた二酸化珪素被膜の膜厚を調べたところ、両者とも
1100nであった。この成膜部をX線光電子分光法(
ESCA; Electr。When the film thicknesses of the silicon dioxide films obtained on the polycarbonate flat plate and the glass substrate were examined as described above, both were found to be 1100 nm. This film-formed area was examined using X-ray photoelectron spectroscopy (
ESCA; Electr.
n 5pectroscopy for Ana
l ys i s)を用いて分析した結果、°はとんど
が5j02からなることが確認された。n5pectroscopy for Ana
As a result of analysis using lys is), it was confirmed that ° consists mostly of 5j02.
ポリカーボネート平板上に得られた二酸化珪素被膜は、
セロハン粘着テープを貼付けて引き剥すテストでは全く
剥がれない強固な付着力を有するものであった。また、
上記二酸化珪素被膜付きポリカーボネート平板を沸騰水
中に1時間浸漬したが、付着力に変化はなかった。The silicon dioxide coating obtained on the polycarbonate flat plate is
In a test in which cellophane adhesive tape was applied and peeled off, it was found to have strong adhesion that did not come off at all. Also,
The polycarbonate plate coated with silicon dioxide was immersed in boiling water for 1 hour, but there was no change in adhesion.
実施例2
r−グリシドキシプロビルトリメトキシシラン100g
と蒸留水100gtt混合しながら0.1規定塩酸0.
5m、Q添加後30分間攪拌して均一溶液を得た。この
加水分解溶液6gを250mNのイソプロピルアルコー
ルで希釈した溶液(R’S i Ol、s換算固形分濃
度約4.2 X 10−2sol/N )を使用し、実
施例1と同様にしてb〉層を形成した縦、横100mm
、厚さ1mmのポリカーボネート平板にC)層を形成し
た。上記操作と全く同様の条件でガラス基板にC)層を
形成したところその膜厚はおよそ20nmであった。Example 2 100 g of r-glycidoxyprobyltrimethoxysilane
and 0.1N hydrochloric acid while mixing 100gtt of distilled water.
After adding 5m and Q, the mixture was stirred for 30 minutes to obtain a homogeneous solution. Using a solution obtained by diluting 6 g of this hydrolyzed solution with 250 mN isopropyl alcohol (R'SiOl, s equivalent solid content concentration of about 4.2 x 10-2 sol/N), the same procedure as in Example 1 was carried out. Layered length and width 100mm
, layer C) was formed on a polycarbonate flat plate with a thickness of 1 mm. When layer C) was formed on a glass substrate under the same conditions as the above operation, the film thickness was approximately 20 nm.
得られたb)層C)層をこの順に積層したポリカーボネ
ート平板に実施例1と同様の操作によりガラス基板に1
100nの二酸化珪素被膜が得られる条件で二酸化珪素
被膜を作成した。The obtained layer b) and layer C) were laminated in this order on a polycarbonate flat plate, and the same procedure as in Example 1 was applied to a glass substrate.
A silicon dioxide film was created under conditions that allowed a 100n silicon dioxide film to be obtained.
ポリカーボネート平板上に得られた二酸化珪素被膜は膜
厚が1100nであり、透明均一なものであった。また
、セロハン粘着テープを貼付けて引き剥すテストでは全
く剥がれない強固な付着力を有するものであっk。The silicon dioxide film obtained on the polycarbonate flat plate had a thickness of 1100 nm and was transparent and uniform. In addition, in a test in which cellophane adhesive tape was applied and peeled off, it had a strong adhesion that did not come off at all.
比較例1
C)層を形成せず、b)層のみ形成したポリカーボネー
ト平板を用いたこと以外は実施例1と同様にして、ガラ
ス基板に1100nの二酸化珪素被膜が得られる条件で
、二酸化珪素被膜を形成した。しかし、ポリカーボネー
ト平板上に得られた二酸化珪素被膜の膜厚は85nmで
あり、実施例1で得られた膜厚1100nよりも小さか
った。Comparative Example 1 A silicon dioxide film was formed in the same manner as in Example 1 except that a polycarbonate flat plate on which only the b) layer was formed without forming the C) layer was used, under the conditions that a 1100n silicon dioxide film was obtained on the glass substrate. was formed. However, the thickness of the silicon dioxide film obtained on the polycarbonate flat plate was 85 nm, which was smaller than the film thickness of 1100 nm obtained in Example 1.
実施例1.2及び比較例1の結果から、C)層の形成が
、析出法による二酸化珪素の成膜性に好影響を与えてい
ることが明白である。From the results of Example 1.2 and Comparative Example 1, it is clear that the formation of layer C) has a positive effect on the film formability of silicon dioxide by the precipitation method.
比較例2
b)層を形成せず、C)層のみ形成したボ1)カーボネ
ート平板を用いkこと以外は実施例1と同様にして、ガ
ラス基板に1100nの二酸化珪素被膜が得られる条件
で、二酸化珪素被膜を形成しk。Comparative Example 2 B) No layer was formed and only layer C) was formed 1) Same as Example 1 except that a carbonate flat plate was used, under conditions that a silicon dioxide coating of 1100N was obtained on the glass substrate. Form a silicon dioxide film.k.
ポリカーボネート平板上に得られた二酸化珪素被膜は膜
厚が1100nであり透明均一なものであった。しかし
、セロハン粘着テープを張りつけて引き剥すテストでは
容易に剥離し、被膜の付着力が弱いことを示した。The silicon dioxide film obtained on the polycarbonate flat plate had a thickness of 1100 nm and was transparent and uniform. However, in a test in which cellophane adhesive tape was applied and peeled off, it peeled off easily, indicating that the adhesive strength of the film was weak.
実施例1.比較例2の結果から、b)層の形成が析出法
による二酸化珪素被膜の密着性を向上させ、強固なもの
にしていることが明白である。Example 1. From the results of Comparative Example 2, it is clear that the formation of layer b) improves the adhesion of the silicon dioxide film formed by the precipitation method and makes it stronger.
実施例3
r−アミノプロピルトリエトキシシラン1gをイソプロ
ピルアルコール400rrl及び1−ブチルアルコール
100mJ2に溶解した溶液(珪素化合物瀾度約9X1
0−”mol/J)に縦、横100mm% 厚さ1mm
のポリカーボネート平板を浸漬し15cm/分の速度で
引き上げた後50℃の温風乾燥炉で30分間乾燥してb
〉層を形成した。Example 3 A solution of 1 g of r-aminopropyltriethoxysilane dissolved in 400 rrl of isopropyl alcohol and 100 mJ2 of 1-butyl alcohol (silicon compound purity approximately 9 x 1
0-”mol/J) length and width 100mm% thickness 1mm
A polycarbonate flat plate was immersed and pulled up at a speed of 15 cm/min, then dried for 30 minutes in a hot air drying oven at 50°C.
> layer was formed.
上記操作と全く同様の条件でガラス基板にb)層を10
層積層したところその膜厚はおよそ30nmであった。10 layers of b) were deposited on the glass substrate under exactly the same conditions as the above operation.
When the layers were laminated, the film thickness was approximately 30 nm.
テトラエトキシシランをl成分とする加水分解物溶液(
固形分温度8%、C3GL−0803(チッソ■製、)
〉2gをイソプロピルアルコール400mp及びl−ブ
チルアルコール100m4に溶解した溶液 (Si02
換算固形分濃度約2.7 X 10”mol、l )に
上記b)層を形成したポリカーボネート平板を浸漬し、
15cm/分の速度で引き上げた後50℃の温風乾燥炉
で30分間乾燥してb)層上にC)層を形成した。上記
操作と全く同様の条件でガラス基板にC)層を10層積
層したところその膜厚はおよそ50nmであった。Hydrolyzate solution containing tetraethoxysilane as l component (
Solid content temperature 8%, C3GL-0803 (manufactured by Chisso ■)
〉2g dissolved in 400mp of isopropyl alcohol and 100m4 of l-butyl alcohol (Si02
The polycarbonate plate on which the above b) layer was formed was immersed in a converted solid content concentration of approximately 2.7 x 10” mol, l),
It was pulled up at a speed of 15 cm/min and then dried in a hot air drying oven at 50°C for 30 minutes to form layer C) on layer b). When ten layers of C) were laminated on a glass substrate under exactly the same conditions as the above operation, the film thickness was approximately 50 nm.
得られThb)層C)層をこの順に積層しにポリカーボ
ネート平板をガラス基板とともに、第1図に示す二酸化
珪素被膜製造装置の内槽中部7に浸漬後80分間保持す
ることによって二酸化珪素被膜を形成した。なお使用し
た珪弗化水素酸水溶液の濃度は2.5mol/Jであり
、成膜時の温度を35℃と設定した。The obtained Thb) layer C) layer was laminated in this order, and the polycarbonate flat plate was immersed and held for 80 minutes together with the glass substrate in the inner tank middle part 7 of the silicon dioxide coating production apparatus shown in FIG. 1 to form a silicon dioxide coating. did. The concentration of the hydrosilicofluoric acid aqueous solution used was 2.5 mol/J, and the temperature during film formation was set at 35°C.
上記の通りポリカーボネート平板及びガラス基板上に得
られた二酸化珪素被膜の膜厚を調べkところ、両者とも
1100nであった。As described above, the thickness of the silicon dioxide film obtained on the polycarbonate flat plate and the glass substrate was examined and found to be 1100 nm for both.
ポリカーボネート平板上に得られた二酸化珪素被膜は、
セロハン粘着テープを貼付けて引き剥すテストでは全く
剥がれない強固な付着力を有するものであった。また、
上記二酸化珪素被膜付きポリカーボネート平板を沸騰水
中に1時間浸漬したが、付着力に変化はなかった。The silicon dioxide coating obtained on the polycarbonate flat plate is
In a test in which cellophane adhesive tape was applied and peeled off, it was found to have strong adhesion that did not come off at all. Also,
The polycarbonate plate coated with silicon dioxide was immersed in boiling water for 1 hour, but there was no change in adhesion.
実施例4
テトラエトキシシラン50gとγ−メタクリロキシプロ
ピルトリメトキシシラン50gと蒸留水100gを混合
しながら0.1規定塩酸0.5m1を添加後30分間攪
拌にて均一溶液を得た。この共加水分解mW15gを2
50 m 、Qのイソプロピルアルコールで希釈した溶
液(S i 02 +R’S iO+、s換算固形分濃
度約4.4X 10−2mol/fI)を使用し、実施
例3と同様にしてb〉層を形成した縦、横100mm、
厚さ1mmのポリカーボネート平板にC)層を形成した
。上記操作と全く同様の条件でガラス基板にC〉層を形
成したところその膜厚はおよそ20nmであった。Example 4 While mixing 50 g of tetraethoxysilane, 50 g of γ-methacryloxypropyltrimethoxysilane, and 100 g of distilled water, 0.5 ml of 0.1N hydrochloric acid was added and stirred for 30 minutes to obtain a homogeneous solution. 15g of this co-hydrolyzed mW is
The b> layer was prepared in the same manner as in Example 3 using a solution diluted with isopropyl alcohol of 50 m, Q (S i 02 + R'S iO +, s-equivalent solid content concentration of about 4.4X 10-2 mol/fI). Formed length and width 100mm,
Layer C) was formed on a polycarbonate flat plate with a thickness of 1 mm. When a layer C was formed on a glass substrate under exactly the same conditions as the above operation, the film thickness was approximately 20 nm.
得られたb〉層C〉層をこの順に積層したポリカーボネ
ート平板に実施例3と同様の操作によりガラス基板に1
100nの二酸化珪素被膜が得られる条件で二酸化珪素
被膜を作成した。The obtained layer B〉layer C〉 layer was laminated in this order on a polycarbonate flat plate, and the same procedure as in Example 3 was applied to a glass substrate.
A silicon dioxide film was created under conditions that allowed a 100n silicon dioxide film to be obtained.
ポリカーボネート平板上に得られた二酸化珪素被膜は膜
厚が1100nであり、透明均一なものであった。また
、セロハン粘着テープを貼付けて引き剥すテストでは全
く剥がれない強固な付着力を有するものであった。上記
二酸化珪素被膜付きポリカーボネート平板を沸騰水中に
1時間浸漬したが付着力に変化はなかった。The silicon dioxide film obtained on the polycarbonate flat plate had a thickness of 1100 nm and was transparent and uniform. In addition, in a test in which cellophane adhesive tape was applied and peeled off, it had a strong adhesive strength that did not peel off at all. The silicon dioxide-coated polycarbonate flat plate was immersed in boiling water for 1 hour, but there was no change in adhesion.
実施例5
N−(β−アミノエチル)−γ−7ミノプロビルメチル
ジメトキシシラン1gをイソプロピルアルコール250
mpに溶解しに溶液(珪素化合物濃度的1.9X 10
−2sol/JDに縦、横100mm厚さ1mmのポリ
カーボネート平板を浸漬し 15cm/分の速度で引き
上げた後50℃の温風乾燥炉で30分間乾燥してb)層
を形成した。上記操作と全く同様の条件でガラス基板に
b)層を形成したところその膜厚はおよそ20nmであ
った。Example 5 1 g of N-(β-aminoethyl)-γ-7 minopropylmethyldimethoxysilane was dissolved in 250 g of isopropyl alcohol.
Dissolve in mp solution (silicon compound concentration 1.9X 10
A polycarbonate flat plate having a length and width of 100 mm and a thickness of 1 mm was immersed in -2sol/JD, pulled up at a speed of 15 cm/min, and then dried for 30 minutes in a hot air drying oven at 50°C to form layer b). When layer b) was formed on a glass substrate under exactly the same conditions as the above operation, the film thickness was approximately 20 nm.
メチルトリエトキシシラン100gと蒸留水100gt
t混合しながら、0.1規定塩酸0.5mgm側添加後
分間攪拌して均一溶液を得た。この加水分解溶液5gを
250m、Qのイソプロピルアルコールで希釈した溶液
(R’S i O+、s換算固形分濃度約5.8 X
10−2mol/f )に上記b)層を形成したポリカ
ーボネート平板を浸漬し15cm/分の速度で引き上げ
た後50℃の温風乾燥炉で30分間乾燥してb)層上に
C)層を形成した。上記操作と全く同様の条件でガラス
基板にc)FJIを5層積層したところその膜厚は約4
0nmであった。100g methyltriethoxysilane and 100gt distilled water
After adding 0.5 mgm of 0.1N hydrochloric acid while mixing, the mixture was stirred for a minute to obtain a homogeneous solution. A solution obtained by diluting 5 g of this hydrolyzed solution with 250 m, Q isopropyl alcohol (R'S i O+, solid concentration in terms of s approximately 5.8
The polycarbonate plate on which the above b) layer was formed was immersed in 10-2 mol/f), pulled up at a speed of 15 cm/min, and then dried in a hot air drying oven at 50°C for 30 minutes to form the c) layer on the b) layer. Formed. When 5 layers of c) FJI were laminated on a glass substrate under exactly the same conditions as the above operation, the film thickness was approximately 4.
It was 0 nm.
得られたb)層C)層をこの順に積層したポリカーボネ
ート平板に実施例3と同様の操作によりガラス基板に1
100nの二酸化珪素被膜が得られる条件で二酸化珪素
被膜を作成した。The obtained layer b) and layer C) were laminated in this order on a polycarbonate flat plate, and the same procedure as in Example 3 was applied to a glass substrate.
A silicon dioxide film was created under conditions that allowed a 100n silicon dioxide film to be obtained.
ポリカーボネート平板上に得られた二酸化珪素被膜は、
膜厚が1100nであり透明均一なものであった。また
、セロハン粘着テープを貼付けて引き剥すテストでは全
く剥がれない強固な付着力を有するものであっk。The silicon dioxide coating obtained on the polycarbonate flat plate is
The film thickness was 1100 nm, and it was transparent and uniform. In addition, in a test in which cellophane adhesive tape was applied and peeled off, it had a strong adhesion that did not come off at all.
上記二酸化珪素被膜付きポリカーボネート平板を沸騰水
中に1時間浸漬したが、付着力に変化鉱なかった。The polycarbonate plate coated with silicon dioxide was immersed in boiling water for 1 hour, but there was no change in adhesion.
実施例6
析出法による二酸化珪素成膜に使用した珪弗化水素酸水
溶液の濃度を3■ol/11としたこと以外は実施例3
と同様にして、ガラス基板に1100nの二酸化珪素被
膜が得られる条件でポリカーボネート平板に二酸化珪素
被膜を作成した。Example 6 Example 3 except that the concentration of the hydrosilicofluoric acid aqueous solution used to form a silicon dioxide film by the precipitation method was 3 ol/11.
In the same manner as above, a silicon dioxide film was formed on a polycarbonate flat plate under conditions that resulted in a silicon dioxide film of 1100 nm thick on a glass substrate.
ポリカーボネート平板上に得られた二酸化珪素被膜は膜
厚が1100nであり、透明均一なものであった。また
、セロハン粘着テープを貼付けて引き剥すテストでは全
く剥がれない強固な付着力を有するものであった。また
、上記二酸化珪素被膜付きポリカーボネート平板を沸騰
水中に1時間浸漬したが、付着力に変化はなかった。The silicon dioxide film obtained on the polycarbonate flat plate had a thickness of 1100 nm and was transparent and uniform. In addition, in a test in which cellophane adhesive tape was applied and peeled off, it had a strong adhesive strength that did not peel off at all. Further, the polycarbonate flat plate coated with silicon dioxide was immersed in boiling water for 1 hour, but there was no change in adhesive strength.
比較例3
C)層を形成せず、b〉層のみ形成したポリカーボネー
ト平板を用いたこと以外は実施例6と同様にして、ガラ
ス基板に1100nの二酸化珪素被膜が得られる条件で
、二酸化珪素被膜を形成した。Comparative Example 3 A silicon dioxide film was formed in the same manner as in Example 6, except that a polycarbonate flat plate was used in which only the layer B was formed without forming the C) layer, and under the conditions that a 1100N silicon dioxide film was obtained on the glass substrate. was formed.
しかし、得られた二酸化珪素被膜は白濁してムラの多い
ものであり、また、成膜していない部分が認められた。However, the obtained silicon dioxide film was cloudy and uneven, and some areas where the film was not formed were observed.
参考例I
N−(β−アミノエチル)−r−アミノプロピルトリエ
トキシシラン0.5gとビニルトリス(β−メトキシエ
トキシ)シラン1.2g(D混合物をイソプロピルアル
コール200mJ7と1−ブチルアルコール50m1に
溶解した溶液(珪素化合物濃度的0.9重量%)に縦、
横100mm、厚さ1mmのポリカーボネート平板を浸
漬し、15cm/分の速度で引き上げた後、50℃の温
風乾燥炉で30分乾燥した。上記操作と全く同様の条件
でガラス基板に第1次被膜を形成したところその膜厚は
約10nmであった。Reference Example I 0.5 g of N-(β-aminoethyl)-r-aminopropyltriethoxysilane and 1.2 g of vinyltris(β-methoxyethoxy)silane (mixture D was dissolved in 200 mJ7 of isopropyl alcohol and 50 ml of 1-butyl alcohol) vertically into the solution (silicon compound concentration: 0.9% by weight),
A polycarbonate flat plate with a width of 100 mm and a thickness of 1 mm was immersed, pulled up at a speed of 15 cm/min, and then dried in a hot air drying oven at 50° C. for 30 minutes. When a primary film was formed on a glass substrate under the same conditions as the above operation, the film thickness was approximately 10 nm.
得られたポリカーボネート平板に実施例6と同様の条件
で析出法によって二酸化珪素被覆を行なった。The obtained polycarbonate flat plate was coated with silicon dioxide by a precipitation method under the same conditions as in Example 6.
しかし、得られた二酸化珪素被膜は白濁してムラの多い
ものであり、また、成膜していない部分が認められた。However, the obtained silicon dioxide film was cloudy and uneven, and some areas where the film was not formed were observed.
実施例7
析出法による二酸化珪素成膜の温度を40℃に設定した
こと以外は実施例2と同様にして、ガラス基板に100
’nmの二酸化珪素被膜が得られる条件でポリカーボネ
ート平板に二酸化珪素被膜を作成した。Example 7 A 100% silicon dioxide film was deposited on a glass substrate in the same manner as in Example 2, except that the temperature for forming a silicon dioxide film by the precipitation method was set at 40°C.
A silicon dioxide film was formed on a polycarbonate flat plate under conditions that allowed a silicon dioxide film of 100 nm in size to be obtained.
ポリカーボネート平板上に得られた二酸化珪素被膜は膜
厚が1100nであり、透明均一なものであった。また
、セロハン粘着テープを貼付けて引き剥すテストでは全
く剥がれない強固な付着力を有するものであった。また
、上記二酸化珪素被膜付きポリカーボネート平板を沸騰
水中に1時間浸漬したが、付着力に変化はなかった。The silicon dioxide film obtained on the polycarbonate flat plate had a thickness of 1100 nm and was transparent and uniform. In addition, in a test in which cellophane adhesive tape was applied and peeled off, it had a strong adhesive strength that did not peel off at all. Further, the polycarbonate flat plate coated with silicon dioxide was immersed in boiling water for 1 hour, but there was no change in adhesive strength.
比較例4
C〉層を形成せず、b)層のみ形成したポリカーボネー
ト平板を用いたこと以外は実施例7と同様にして、ガラ
ス基板に1100nの二酸化珪素被膜が得られる条件で
、二酸化珪素被膜を形成した。Comparative Example 4 A silicon dioxide film was formed in the same manner as in Example 7, except that a polycarbonate flat plate on which only the b) layer was formed without forming the C> layer was used, under the conditions that a 1100N silicon dioxide film was obtained on the glass substrate. was formed.
しかし、得られた二酸化珪素被膜は白濁してムラの多い
ものであった。この白濁部分を電子顕微鎖で観察したと
ころ、二酸化珪素被膜中に二酸化珪素粒子が取り込まれ
ていた。However, the obtained silicon dioxide coating was cloudy and uneven. When this cloudy part was observed using an electron microscope, it was found that silicon dioxide particles were incorporated into the silicon dioxide coating.
実施例6、比較例3、参考例1の結果及び実施例7、比
較例4の結果からC)層の形成が、析出法による二酸化
珪素被膜の均一性に好影響を与えていることが明白であ
る。From the results of Example 6, Comparative Example 3, and Reference Example 1, and the results of Example 7 and Comparative Example 4, it is clear that the formation of C) layer has a positive effect on the uniformity of the silicon dioxide film formed by the precipitation method. It is.
実施例8
表面平坦なポリカーボネート平板の代わりにポリカーボ
ネート製光デイスク基板(深さ0.07μm幅0.8μ
mピッチ1.6μmの溝を有する)を用いたこと以外は
、実施例3と同様にして、二酸化珪素被膜(約90nm
)を作成した。成膜しTh21部を電子顕V&鏡でn察
したところ、二酸化珪素がポリカーボネート製ディスク
基板の微細な凹凸形状に沿って均一な厚みで成膜してい
ることが認められた。Example 8 Instead of a polycarbonate flat plate with a flat surface, a polycarbonate optical disk substrate (depth 0.07 μm width 0.8 μm) was used.
A silicon dioxide coating (approximately 90 nm grooves with a pitch of 1.6 μm) was used in the same manner as in Example 3, except that
)It was created. When the film was formed and the Th21 portion was observed using an electron microscope and a mirror, it was found that silicon dioxide was formed to a uniform thickness along the fine irregularities of the polycarbonate disk substrate.
実施例9.比較例5
以下の2種類の縦、横50mm、厚さ1mmのポリカー
ボネート平板を用意した。Example 9. Comparative Example 5 The following two types of polycarbonate flat plates measuring 50 mm in length and width and 1 mm in thickness were prepared.
■ 実施例3と同様の処理により二酸化珪素被膜(10
0nm厚)を被覆したもの(実施例9)。■ A silicon dioxide film (10
(Example 9).
■ スパッタ法により片面に二酸化珪素被膜(100n
m)を被覆したもの(比較例5)。■ Silicon dioxide coating (100n) on one side by sputtering method.
m) (Comparative Example 5).
これらを60℃、相対湿度90±5%に保った恒温恒湿
槽に3週間放置した後、外観及び密着性を調べた。These were left in a constant temperature and humidity chamber maintained at 60° C. and relative humidity of 90±5% for 3 weeks, and then their appearance and adhesion were examined.
スパッタ法(比較例5)による二酸化珪素被膜は完全に
剥離し消失していたのに対し、析出法(実施例9)によ
る二酸化珪素被膜は、外観に変化はなく強固な密着性を
有する被膜であった。The silicon dioxide coating produced by the sputtering method (Comparative Example 5) completely peeled off and disappeared, whereas the silicon dioxide coating produced by the precipitation method (Example 9) had no change in appearance and was a coating with strong adhesion. there were.
実施例10. 比較例6,7
以下の2種類の縦、横200mm、厚さ1mmのポリカ
ーボネート平板を用意した。Example 10. Comparative Examples 6 and 7 The following two types of polycarbonate flat plates measuring 200 mm in length and width and 1 mm in thickness were prepared.
■ 実施例3と同様の処理により二酸化珪素被膜(10
0nm厚)を被覆したちの〈実施例10)。■ A silicon dioxide film (10
Example 10).
■ 未処理のものく比較例6〉。■ Untreated Comparative Example 6.
これらを密封容器に入れ、真空ポンプで容器内を真空に
した際の経過時間と真空度の関係を調べた。比較のため
、容器内に何もいれない場合(比較例7)についても行
なった。These were placed in a sealed container, and the relationship between the elapsed time and the degree of vacuum was investigated when the inside of the container was evacuated using a vacuum pump. For comparison, a case where nothing was placed in the container (Comparative Example 7) was also conducted.
2時閏排スを続けた時の真空度を第1表に示す。Table 1 shows the degree of vacuum when the 2 hour evacuation was continued.
実施例10. 比較例6,7の結果から、ポリカーボ
ネート成形体上に析出法によって二酸化珪素被膜を形成
すれば、真空排気する際に高真空に達するまでの時間を
短縮できることは明らかである。Example 10. From the results of Comparative Examples 6 and 7, it is clear that if a silicon dioxide film is formed on a polycarbonate molded body by a precipitation method, the time required to reach a high vacuum during evacuation can be shortened.
実施例11. 比較例8
以下の2種類の縦、横100mm、厚さ1mmのポリカ
ーボネート平板を用意した。Example 11. Comparative Example 8 The following two types of polycarbonate flat plates measuring 100 mm in length and width and 1 mm in thickness were prepared.
■ 実施例3と同様の処理により二酸化珪素被膜(10
0nm厚)を被覆したもの(実施例11)。■ A silicon dioxide film (10
(Example 11).
■ 未処理のもの(比較例8)。■ Untreated (Comparative Example 8).
第1表
第2表
これらを50℃で24時間乾燥後、
蒸留水に漫
潰して24時間保持した。蒸留水浸漬前後の重量変化率
(吸水率)を調べた結果を第2表に示す。Table 1 Table 2 After drying these at 50°C for 24 hours, they were crushed in distilled water and kept for 24 hours. Table 2 shows the results of examining the rate of weight change (water absorption) before and after immersion in distilled water.
[発明の効果]
以上詳述した通り、本発明の二酸化珪素被覆ポリカーボ
ネート成形体の製造方法は、ポリカーボネート成形体表
面に一般式(1)で示されるアミノ基を有する珪素化合
物を含む塗布液を塗布して乾燥硬化させることにより、
非常に薄い、付着力良好な珪素含有被膜を第1層として
被覆し、その上に一般式(II)で示される珪素化合物
の加水分解物を含む塗布液を塗布して乾燥硬化させるこ
とにより、非常に薄い、第1層と付着力良好な珪素含有
被膜を第2層として被覆した後、更に、その上に該第2
層と付着力良好な二酸化珪素被膜を作成するものであっ
て、本発明の方法によれば、■ 蒸着、スパッタ法で直
接ポリカーボネート成形体表面に形成させた二酸化珪素
被膜に比較して、はるかに耐久性に優れた被膜を形成す
ることができる。[Effects of the Invention] As detailed above, the method for producing a silicon dioxide-coated polycarbonate molded body of the present invention includes coating the surface of a polycarbonate molded body with a coating liquid containing a silicon compound having an amino group represented by general formula (1). By drying and curing,
By coating a very thin silicon-containing film with good adhesion as a first layer, and applying a coating liquid containing a hydrolyzate of a silicon compound represented by general formula (II) thereon and drying and curing, After coating a very thin silicon-containing coating with good adhesion to the first layer as a second layer, the second layer is further coated on top of the second layer.
The method of the present invention creates a silicon dioxide film with good adhesion to the layer. A coating with excellent durability can be formed.
■ 第1層及び第2層形成のための塗布法において、使
用する塗布液として珪素化合物の希薄溶液を用いること
ができるため微細な凹凸形状を持つディスク基板へもそ
の形状を損なうことなく薄膜被覆することができる。■ In the coating method for forming the first and second layers, a dilute solution of a silicon compound can be used as the coating liquid, so even disk substrates with minute irregularities can be coated with a thin film without damaging the shape. can do.
■ 第2層形成後、溶液と接触させることによって二酸
化珪素を析出させ膜状にするものであるため、ポリカー
ボネート製ディスク基板等の表面の凹凸形状に追従した
二酸化珪素被膜を形成できる。(2) After the second layer is formed, silicon dioxide is precipitated into a film by contacting with a solution, so it is possible to form a silicon dioxide film that follows the uneven shape of the surface of a polycarbonate disk substrate, etc.
■ 第1層及び第2層を非常に薄くすることができるた
めフィルム状の成形体にも応用可能である。(2) Since the first and second layers can be made very thin, it can also be applied to film-like molded products.
■ 第2層の形成により析出法による二酸化珪素の成績
性が向上し、透明で均一性に優れた二酸化珪素被膜が得
られる。(2) The formation of the second layer improves the performance of silicon dioxide produced by the precipitation method, resulting in a transparent silicon dioxide coating with excellent uniformity.
■ 得られる二酸化珪素被膜は、緻密性に優れプラスチ
ックの持つ賭欠点(例えば、吸水性、ガス透過性、ガス
放出性)を改良することができる。(2) The resulting silicon dioxide coating has excellent density and can improve the disadvantages of plastics (eg, water absorption, gas permeability, gas release).
等の優れた効果が奏される。Excellent effects such as these can be achieved.
第1図は本発明を実施するために使用した二酸化珪素被
膜製造装置の系統説明図である。
l−外槽、 2−内槽、3−水
4−ヒーター
5−攪拌機 6−内槽前部
7−内槽中部 8−内槽後部
9−洗浄液槽 10−5%HF水溶液11−フ
ィルター 12−循環ボンブ13−三方コンク
14−ポリカーボネート成形体FIG. 1 is a system explanatory diagram of a silicon dioxide film manufacturing apparatus used to carry out the present invention. l-outer tank, 2-inner tank, 3-water
4-Heater 5-Agitator 6-Front part of inner tank 7-Middle part of inner tank 8-Rear part of inner tank 9-Cleaning liquid tank 10-5% HF aqueous solution 11-Filter 12-Circulation bomb 13-Three-way concrete 14-Polycarbonate molded body
Claims (3)
る層、 ▲数式、化学式、表等があります▼( I ) 「式中R^ I はアミノ基を含んだ有機基、R^2は炭
素数1〜6のアルキル基、R^3は炭素数1〜6のアル
キル基、アルコキシアルキル基、mは1〜3の整数、n
は0または1〜2の整数、ただしm+n≦3」 c)一般式(II)で示される加水分解性置 換基の三置換または四置換珪素化合物の1種または2種
以上の部分加水分解物を被覆硬化してなる層、および R^4_n−Si−(OR^5)_4_−_n(II)「
式中R^4は炭素数1〜6のアルキル基、ビニル基、エ
ポキシ基、メルカプト基、フッ素または塩素を有する有
機基、R^5は炭素数1〜6のアルキル基、アコキシア
ルキル基、アセチル基、nは0または1」 d)前記c)層に二酸化珪素の過飽和状態 の珪弗化水素酸水溶液を接触させて形成させた二酸化珪
素被膜 をa)、b)、c)およびd)の順に積層してなる二酸
化珪素被覆ポリカーボネート成形体。(1) a) Polycarbonate molded body, b) A layer formed by coating and curing one or more silicon compounds having amino groups represented by the general formula (I), ▲There are mathematical formulas, chemical formulas, tables, etc.▼ (I) "In the formula, R^I is an organic group containing an amino group, R^2 is an alkyl group having 1 to 6 carbon atoms, R^3 is an alkyl group or alkoxyalkyl group having 1 to 6 carbon atoms, and m is an alkyl group having 1 to 6 carbon atoms. integer from 1 to 3, n
is 0 or an integer of 1 to 2, provided that m+n≦3” c) Partial hydrolyzate of one or more trisubstituted or tetrasubstituted silicon compounds of the hydrolyzable substituent represented by general formula (II) A layer obtained by hardening the coating, and R^4_n-Si-(OR^5)_4_-_n(II)"
In the formula, R^4 is an alkyl group having 1 to 6 carbon atoms, a vinyl group, an epoxy group, a mercapto group, an organic group having fluorine or chlorine, and R^5 is an alkyl group having 1 to 6 carbon atoms, an axoxyalkyl group, acetyl group, n is 0 or 1" d) A silicon dioxide coating formed by contacting the layer c) with a supersaturated aqueous solution of hydrosilicofluoric acid of silicon dioxide, a), b), c) and d) A silicon dioxide-coated polycarbonate molded body formed by laminating layers in this order.
数1〜6のアルキル基、R^3は炭素数1〜6のアルキ
ル基、アルコキシアルキル基、mは1〜3の整数、nは
0または1〜2の整数、ただしm+n≦3」 で示されるアミノ基を有する珪素化合物の1種または2
種以上を10^−^3〜10^−^1mol/l舎む塗
布液を塗布し乾燥させて被覆硬化層を形成し、 c)一般式(II) R^4_n−Si−(OR^5)_4_−_n(II)「
式中R^4は炭素数1〜6のアルキル基、ビニル基、エ
ポキシ基、メルカプト基、フッ素または塩素を有する有
機基、R^5は炭素数1〜6のアルキル基、アコキシア
ルキル基、アセチル基、nは0または1」 で示される加水分解性置換基の三置換または四置換珪素
化合物の1種または2種以上の部分加水分解物の層を前
記b)層上に被覆硬化し、 d)二酸化珪素の過飽和状態の珪弗化水素酸水溶液を前
記c)層に接触させて、その上に二酸化珪素被膜を形成
する ことを含む二酸化珪素被覆ポリカーボネート成形体の製
造方法。(2) a) On the surface of the polycarbonate molded body b) General formula (I) ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (I) “In the formula, R^1 is an organic group containing an amino group, and R^2 is an organic group containing an amino group. an alkyl group having 1 to 6 carbon atoms, R^3 is an alkyl group having 1 to 6 carbon atoms, an alkoxyalkyl group, m is an integer of 1 to 3, n is an integer of 0 or 1 to 2, provided that m+n≦3 One or two silicon compounds having the amino group shown
A coating solution containing 10^-^3 to 10^-^1 mol/l of seeds or more is applied and dried to form a hardened coating layer, c) general formula (II) R^4_n-Si-(OR^5 )_4_-_n(II)
In the formula, R^4 is an alkyl group having 1 to 6 carbon atoms, a vinyl group, an epoxy group, a mercapto group, an organic group having fluorine or chlorine, and R^5 is an alkyl group having 1 to 6 carbon atoms, an axoxyalkyl group, acetyl group, n is 0 or 1'' and a layer of a partial hydrolyzate of one or more trisubstituted or tetrasubstituted silicon compounds having a hydrolyzable substituent group represented by "acetyl group, n is 0 or 1" is coated and cured on the layer b), d) A method for producing a silicon dioxide-coated polycarbonate molded article, which comprises bringing a supersaturated aqueous solution of silicon dioxide into hydrosilicofluoric acid into contact with the layer c) to form a silicon dioxide coating thereon.
部分加水分解物をR^4_nSiO_2_−_n_/_
2換算にして10^−^3mol/l以上含む塗布液を
塗布し乾燥させることにより形成される特許請求の範囲
第2項に記載の二酸化珪素被覆ポリカーボネート成形体
の製造方法。(3) The layer c) is a partial hydrolyzate of a silicon compound represented by the general formula (II).
The method for producing a silicon dioxide-coated polycarbonate molded article according to claim 2, which is formed by applying and drying a coating liquid containing 10^-^3 mol/l or more in terms of 2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1221086A JPH0384043A (en) | 1989-08-28 | 1989-08-28 | Polycarbonate molded body coated with silicon oxide and its production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1221086A JPH0384043A (en) | 1989-08-28 | 1989-08-28 | Polycarbonate molded body coated with silicon oxide and its production |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0384043A true JPH0384043A (en) | 1991-04-09 |
Family
ID=16761270
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1221086A Pending JPH0384043A (en) | 1989-08-28 | 1989-08-28 | Polycarbonate molded body coated with silicon oxide and its production |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0384043A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5501568A (en) * | 1993-07-01 | 1996-03-26 | Mitsubishi Denki Kabushiki Kaisha | Wafer aligning apparatus |
-
1989
- 1989-08-28 JP JP1221086A patent/JPH0384043A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5501568A (en) * | 1993-07-01 | 1996-03-26 | Mitsubishi Denki Kabushiki Kaisha | Wafer aligning apparatus |
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