JPH0362515A - Vacuum heating processor - Google Patents
Vacuum heating processorInfo
- Publication number
- JPH0362515A JPH0362515A JP1197748A JP19774889A JPH0362515A JP H0362515 A JPH0362515 A JP H0362515A JP 1197748 A JP1197748 A JP 1197748A JP 19774889 A JP19774889 A JP 19774889A JP H0362515 A JPH0362515 A JP H0362515A
- Authority
- JP
- Japan
- Prior art keywords
- vacuum
- vacuum chamber
- heating
- chamber
- substrates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H01L21/205—
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D13/00—Apparatus for preheating charges; Arrangements for preheating charges
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、真空加熱処理装置に関し、特にCvD (C
hemical V apor D epositi
on )装置等の真空反応装置における予備加熱室等に
好適に適用できる真空加熱処理装置に関するものである
。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a vacuum heat treatment apparatus, and in particular to a CvD (CvD)
chemical vapor
The present invention relates to a vacuum heat treatment apparatus that can be suitably applied to a preheating chamber or the like in a vacuum reaction apparatus such as a vacuum reaction apparatus such as a vacuum heat treatment apparatus.
従来の技術
例えば、真空排気した反応室内に被処理物を加熱して保
持し、この反応室内に形成すべき薄膜の組成元素を含む
化合物ガスを供給することによって被処理物表面に薄膜
を形成するCVD装置においては、通常反応室内を真空
状態に保持したまま被処理物を搬入、搬出できるように
真空排気可能なロードロック室と呼ばれる予備室が設け
られ、反応室で処理中にこのロードロック室と外部との
間で被処理物の受は渡しを行った後真空状態にしておき
、反応室内での処理が終わると反応室と予備室との間で
被処理物の受は渡しを行って直ちに処理を再開できるよ
うに構成されている。更に、ロードロツタ室にも加熱手
段を配設して被処理物をロードロック室内において予備
加熱し、反応室内での加熱時間を少なくするようにした
ものも知られている。Conventional technology For example, a thin film is formed on the surface of the workpiece by heating and holding the workpiece in an evacuated reaction chamber and supplying a compound gas containing the constituent elements of the thin film to be formed into the reaction chamber. CVD equipment usually has a preliminary chamber called a load-lock chamber that can be evacuated so that objects to be processed can be brought in and taken out while maintaining the reaction chamber in a vacuum state. After the workpiece is transferred between the chamber and the outside, the workpiece is placed in a vacuum state, and after the processing in the reaction chamber is completed, the workpiece is transferred between the reaction chamber and the preliminary chamber. It is configured so that processing can be resumed immediately. Furthermore, there is also known a device in which a heating means is disposed in the load lock chamber to preheat the object to be processed in the load lock chamber, thereby reducing the heating time in the reaction chamber.
このような加熱手段を備えたロードロック室の構成とし
ては、例えば第3図に示すように、被処理物としての基
板30を載置する載置台32を口−ドロック室31内に
設置するとともにこの載置台32にシーズヒータ33を
内蔵させ、加熱された載置台32にて基板30を伝熱加
熱するようにしている。なお、第3図において、34は
反応室35.36は反応室34とロードロック室31の
間及びロードロツタ室31と外部との間に設けられたゲ
ート、37は外部からロードロック室31に基板30を
挿入する移載手段であり、ロードロック室31から反応
室34に基板30を移載する手段(図示せず)も設けら
れている。又、シーズヒータ33の代わりに加熱ランプ
等の輻射加熱する加熱手段を用いたものもある。For example, as shown in FIG. 3, a load-lock chamber equipped with such a heating means is configured such that a mounting table 32 on which a substrate 30 as an object to be processed is placed is installed in a load-lock chamber 31, and A sheathed heater 33 is built into this mounting table 32, and the substrate 30 is heated by heat transfer on the heated mounting table 32. In FIG. 3, 34 is a reaction chamber 35, 36 is a gate provided between the reaction chamber 34 and the load lock chamber 31, and between the load rotor chamber 31 and the outside, and 37 is a gate provided from the outside to the load lock chamber 31. A means (not shown) for transferring the substrate 30 from the load lock chamber 31 to the reaction chamber 34 is also provided. Also, instead of the sheathed heater 33, there is also a heating device that uses radiation heating means such as a heating lamp.
一方、第4図に示すように、ロードロック室31の真空
排気と大気圧復帰の回数を少なくするために、複数の基
板30を載置したトレイ38をロードロック室31と外
部との間で搬入、搬出可能に構威し、ロードロツタ室3
1内に搬入された基板30に対してその上方に配設した
加熱手段39にて輻射加熱するようにしたものがある。On the other hand, as shown in FIG. 4, in order to reduce the number of times the load lock chamber 31 is evacuated and returned to atmospheric pressure, a tray 38 on which a plurality of substrates 30 are placed is placed between the load lock chamber 31 and the outside. Loading and unloading is possible, and there is a loading room 3
There is one in which the substrate 30 carried into the device 1 is heated by radiation using a heating means 39 disposed above the substrate 30.
この輻射加熱手段としてはシーズヒータを内蔵したもの
や加熱ランプ等が用いられている。As this radiation heating means, a sheathed heater built-in, a heating lamp, etc. are used.
発明が解決しようとする課題
ところが、第3図の構成では、ロードロック室31に対
して一度に搬入、搬出される基板30の数が少なく、そ
の度にロードロック室31の真空排気と大気圧復帰を行
わなければならないために能率が悪いという問題がある
。また、ロードロツタ室31に収容できる基板30の枚
数を増加しようとすると、i−ドロック室31の面積が
大きくなり、大きなスペースが必要となり、かつ容積が
基板数に略比例的に増加して真空排気に多くの時間がか
かり、本質的な問題解消策にはなり得ないという問題が
ある。又、輻射加熱方式を採用すると、熱効率も悪いと
いう問題があった。Problem to be Solved by the Invention However, with the configuration shown in FIG. There is a problem of inefficiency due to the need to perform recovery. Furthermore, if an attempt is made to increase the number of substrates 30 that can be accommodated in the load rotor chamber 31, the area of the i-Dlock chamber 31 will increase, requiring a large space, and the volume will increase approximately in proportion to the number of substrates. The problem is that it takes a lot of time and cannot be a solution to the essential problem. Further, when a radiation heating method is adopted, there is a problem that thermal efficiency is also poor.
また、第4図の構成でも、ロードロツタ室31の面積が
大きくなって同様の問題があり、また基板30の移載手
段としてトレイ38の搬送手段が必要となるが真空加熱
室に適用できる搬送手段は加熱時のトレイ38の熱変形
を考慮に入れる必要からその構成が非常に複雑となり、
搬送の信頼性が低下するという問題があった。また輻射
方式の加熱手段を採用せざるを得ないので熱効率も悪い
という問題がある。Further, even in the configuration shown in FIG. 4, the area of the load rotor chamber 31 becomes large, resulting in the same problem, and a conveying means for the tray 38 is required as a means for transferring the substrate 30, but this is a conveying means that can be applied to a vacuum heating chamber. Since it is necessary to take into account the thermal deformation of the tray 38 during heating, the configuration becomes very complicated.
There was a problem in that the reliability of transportation decreased. Furthermore, since a radiation type heating means has to be adopted, there is a problem of poor thermal efficiency.
本発明は上記従来の問題点に鑑み、被処理物の収容数を
設置スペース及び容積を著しく増加させることなく増や
すことができ、真空排気効率及び熱効率のよい真空加熱
処理装置を提供することを目的とする。In view of the above-mentioned conventional problems, an object of the present invention is to provide a vacuum heat treatment apparatus that can increase the number of objects to be treated without significantly increasing the installation space and volume, and has good vacuum evacuation efficiency and thermal efficiency. shall be.
課題を解決するための手段
本発明は上記目的を達成するために、所定の真空状態に
排気可能な真空室と、この真空室内に上下方向に互いに
間隔を設けて配設された複数段の加熱プレートと、これ
ら加熱プレートの昇降駆動手段とを備えたことを特徴と
する。Means for Solving the Problems In order to achieve the above objects, the present invention provides a vacuum chamber that can be evacuated to a predetermined vacuum state, and a plurality of heating stages arranged vertically spaced apart from each other within this vacuum chamber. The heating plate is characterized by comprising: plates and means for driving the heating plates up and down.
又、好ましくは各加熱プレートに加熱手段としてシーズ
ヒータを内蔵し、その外管に対して真空シール状態で接
続されるとともに真空室外に導出された導管と、導管内
に挿通されたヒータへの電力供給線とを備えている。Preferably, each heating plate has a built-in sheathed heater as a heating means, and a conduit that is connected to the outer tube in a vacuum-sealed state and led out to the outside of the vacuum chamber, and a heater inserted into the conduit. It is equipped with a supply line.
作 用
本発明によると、真空室内に被処理物を載置する加熱プ
レートを上下方向に複数段配設しているので、被処理物
の収容数を増加できるとともに、設置スペースは増加せ
ず、真空室の容積の増加も少なくて済むため真空排気効
率が高く、かつこれら加熱プレートを昇降させるように
しているので、被処理物の移載手段も簡単な構成のもの
を適用でき、また被処理物を加熱プレートにて伝熱方式
で加熱するために加熱効率も良い。Function According to the present invention, since the heating plates on which the objects to be processed are placed in the vacuum chamber are arranged in multiple stages in the vertical direction, the number of objects to be processed can be increased, and the installation space is not increased. Since the volume of the vacuum chamber does not need to increase much, the vacuum evacuation efficiency is high, and since these heating plates are moved up and down, a simple means for transferring the workpiece can be used, and the Heating efficiency is also good because objects are heated using a heat transfer method using a heating plate.
又、加熱手段としてのシーズヒータの外管を真空室外に
導出された導管に接続してこの導管を通して電力を供給
するようにしているので、真空室においてもシーズヒー
タ内は大気に連通されているため放電を生じず、シーズ
ヒータを加熱手段として用いることにより精度の良い加
熱制御が可能である。In addition, the outer tube of the sheathed heater serving as a heating means is connected to a conduit led out to the outside of the vacuum chamber, and power is supplied through this conduit, so that the interior of the sheathed heater is communicated with the atmosphere even in the vacuum chamber. Therefore, accurate heating control is possible by using a sheathed heater as a heating means without causing discharge.
実施例
以下、本発明をCVD装置のロードロック室に適用した
一実施例を第1図及び第2図に基づいて説明する。EXAMPLE Hereinafter, an example in which the present invention is applied to a load lock chamber of a CVD apparatus will be described with reference to FIGS. 1 and 2.
lは、反応室2に対して基板を搬入、搬出するためのロ
ードロック室としての真空室であり、外部との間で基[
30を受は渡す開口と反応室との間で基板30を受は渡
す開口がその両側壁に形成され、それぞれに真空状態を
保持できるように密閉可能なゲート3.4が設けられて
いる。この真空室1には、図示しない真空排気手段に接
続された排気口5、H!等の還元ガスを導入するガス導
入口6が設けられている。1 is a vacuum chamber serving as a load lock chamber for loading and unloading substrates into and out of the reaction chamber 2;
Openings for passing the substrate 30 are formed on both side walls between the opening for passing the substrate 30 and the reaction chamber, and each is provided with a sealable gate 3.4 so as to maintain a vacuum state. This vacuum chamber 1 has an exhaust port 5, H! connected to an evacuation means (not shown). A gas inlet 6 for introducing a reducing gas such as the like is provided.
真空室1内には、複数の加熱プレート7a〜7dが上下
方向に互いに間隔を設けて配設されている。8は加熱プ
レー)7a〜7dを互いに連結保持する連結部材である
。最下段の加熱プレート7aから下方にこれら加熱プレ
ー)7a〜7dを支持する支持軸9が垂下され、真空室
1の底面に形成された通孔10を貫通し、下部可動板1
1に固着されている。この下部支持板11は、モータ1
2にて回転駆動される送りねじ軸13に螺合された昇降
体14から戒る昇降駆動手段15にて昇降駆動可能に構
成されている。下部可動板11と真空室1の底壁の通孔
10周縁部とはベローズ管16にて接続され、真空室1
の真空状態が保持されている。Inside the vacuum chamber 1, a plurality of heating plates 7a to 7d are arranged vertically at intervals from each other. Reference numeral 8 denotes a connecting member that connects and holds the heating plates 7a to 7d together. A support shaft 9 that supports these heating plates 7a to 7d is suspended downward from the lowest heating plate 7a, passes through a through hole 10 formed in the bottom of the vacuum chamber 1, and is connected to the lower movable plate 1.
It is fixed at 1. This lower support plate 11 supports the motor 1
It is configured such that it can be driven up and down by an up/down drive means 15 which is controlled by an up/down body 14 screwed onto a feed screw shaft 13 which is rotationally driven by a feed screw shaft 13. The lower movable plate 11 and the peripheral edge of the through hole 10 in the bottom wall of the vacuum chamber 1 are connected by a bellows tube 16, and the vacuum chamber 1
A vacuum state is maintained.
各加熱プレー)7a〜7dには、シーズヒータ17が内
蔵されており、このシーズヒータ17の接続端における
外管に、第2図に示すように、真空シール可能なコネク
タ18を介して導管19が接続されている。導管19は
、真空室1の土壁に形成された通孔20を貫通するよう
に上方に延出され、上部可動板21に固着されるととも
にこれを貫通して外部の大気に開放されている。この導
管19に挿通されたリード線22が、シーズヒータ17
の外管内の電熱線に接続されている。上部可動板21と
真空室1の上壁の通孔20の周縁部とはベローズ管23
にて接続され、真空室1の真空状態が保持されている。Each heating plate) 7a to 7d has a built-in sheathed heater 17, and as shown in FIG. is connected. The conduit 19 extends upward through a through hole 20 formed in the earthen wall of the vacuum chamber 1, is fixed to an upper movable plate 21, and is opened to the outside atmosphere through the upper movable plate 21. . The lead wire 22 inserted through this conduit 19 connects to the sheathed heater 17.
is connected to the heating wire inside the outer tube. The upper movable plate 21 and the periphery of the through hole 20 in the upper wall of the vacuum chamber 1 are the bellows pipe 23.
The vacuum state of the vacuum chamber 1 is maintained.
24は、外部と真空室lとの間で基板30を受は渡す移
載手段で、送りねし機構25等にて往復移動可能なアー
ム26にて構成されている。Reference numeral 24 denotes a transfer means for receiving and transferring the substrate 30 between the outside and the vacuum chamber 1, and is composed of an arm 26 that can be reciprocated by a feed mechanism 25 or the like.
次に、作用を説明する。Next, the effect will be explained.
真空室lと外部の間で基板30を受は渡しする際には、
ゲート4を閉じた状態で真空室1内を大気圧に戻してゲ
ート3を開き、昇降駆動手段15にて各加熱プレー)7
a〜7dの高さ位置を調整して移載手段24のアーム2
6の高さに位置合わせし、移載手段24にて各加熱プレ
ー)?a〜7dとの間で基板30の受は渡しを行う、こ
のように加熱プレー)?a〜7dが上下方向に複数段積
層して配設されているので、比較的小さい真空室lにて
多くの基板30を収容することができる。When transferring the substrate 30 between the vacuum chamber l and the outside,
With the gate 4 closed, the inside of the vacuum chamber 1 is returned to atmospheric pressure, the gate 3 is opened, and each heating plate is heated by the elevating drive means 15).
Adjusting the height position of a to 7d, the arm 2 of the transfer means 24
6, and transfer each heating plate using the transfer means 24)? The substrate 30 is transferred between the terminals a to 7d (heating play)? Since a to 7d are stacked vertically in multiple stages, a large number of substrates 30 can be accommodated in a relatively small vacuum chamber l.
また、加熱プレー)7a〜7dの高さ位置を移載手段2
4に合わせて位置調整するので、移載手段24として構
成の簡単なものを用いることができる。In addition, the height positions of heating plates 7a to 7d are transferred to the transfer means 2.
4, the transfer means 24 can be of a simple configuration.
加熱プレー)?a〜7dに対する基板30の受は渡しが
終了すると、ゲート3を閉じ、ガス導入口6から還元ガ
スを導入するとともに、排気口5から排気することによ
って真空室1内を還元性雰囲気で所定の真空状態にする
。このとき、真空室1は基板30の収容枚数に比してそ
の容積が太きくないため、比較的短時間で所定の真空状
態とすることができ、真空排気効率が高い。また、加熱
プレート7a〜7dのシーズヒータ17にリード線22
を通して通電し、各加熱プレー1−7a〜7d上の基板
30を予備加熱する。その際、基板30を加熱プレー)
7a〜7d上で伝熱方式で加熱するので効率良く加熱す
ることができる。また、シーズヒータ17を用いて制御
性良く加熱できるとともに、シーズヒータ17内が大気
に連通しているので、その電熱線と外管との間で放電を
生ずることもない。heating play)? When the transfer of the substrate 30 to a to 7d is completed, the gate 3 is closed, and reducing gas is introduced from the gas inlet 6 and exhausted from the exhaust port 5 to maintain the vacuum chamber 1 in a predetermined reducing atmosphere. Create a vacuum. At this time, since the volume of the vacuum chamber 1 is not large compared to the number of accommodated substrates 30, a predetermined vacuum state can be achieved in a relatively short time, and the evacuation efficiency is high. In addition, lead wires 22 are connected to the sheathed heaters 17 of the heating plates 7a to 7d.
The substrate 30 on each of the heating plates 1-7a to 7d is preheated by applying electricity through the heating plates 1-7a to 7d. At that time, the substrate 30 is heated)
Since heating is performed using a heat transfer method on 7a to 7d, efficient heating can be achieved. Moreover, since the sheathed heater 17 can be used to heat with good controllability, and the inside of the sheathed heater 17 is communicated with the atmosphere, no discharge occurs between the heating wire and the outer tube.
その後、反応室2内での薄膜形成処理が終了すると、ゲ
ート4を開いて図示しない移載手段にて反応室2内の処
理済の基板3oを取り出すとともに加熱プレー)7a〜
7d上の基板を反応室2内に挿入する。このとき、昇降
駆動手段15にて対応する加熱プレー)7a〜7dを移
載手段に合わせて高さ位置を調整する。こうして、反応
室2と真空室1との間で基板30の搬入、搬出が終了す
ると、ゲート4を閉じることによって反応室2内では直
ちに薄膜形成処理を再開することができる。また、以上
の動作を繰り返して真空室1内のすべての基板30の処
理が終了すると、上記のように真空室1と外部との間で
一度に基板30の受は渡しを行う。Thereafter, when the thin film forming process in the reaction chamber 2 is completed, the gate 4 is opened and the processed substrate 3o in the reaction chamber 2 is taken out by a transfer means (not shown), and the heated substrate 7a~
The substrate on 7d is inserted into the reaction chamber 2. At this time, the height positions of the corresponding heating plates 7a to 7d are adjusted by the lifting/lowering drive means 15 in accordance with the transfer means. In this way, when the loading and unloading of the substrate 30 between the reaction chamber 2 and the vacuum chamber 1 is completed, the thin film forming process can be immediately restarted in the reaction chamber 2 by closing the gate 4. Furthermore, when all the substrates 30 in the vacuum chamber 1 have been processed by repeating the above operations, the substrates 30 are transferred at one time between the vacuum chamber 1 and the outside as described above.
発明の効果
本発明によれば、真空室内に被処理物を載置する加熱プ
レートを上下方向に複数段配設しているので、被処理物
の収容数を増加できるとともに、設置スペースは増加せ
ず、容積の増加も少なくて済むため真空排気効率が高く
、かつこれら加熱プレートを昇降させるようにしている
ので、被処理物の移載手段も簡単な構成のものを適用で
き、また被処理物を加熱プレートにて伝熱方式で加熱す
るために加熱効率も良い。Effects of the Invention According to the present invention, since the heating plates for placing the objects to be processed are arranged in multiple stages in the vertical direction in the vacuum chamber, the number of objects to be processed can be increased and the installation space is not increased. In addition, since the increase in volume is small, the evacuation efficiency is high, and since these heating plates are moved up and down, a simple structure can be used for transferring the workpiece, and the workpiece can be transferred easily. Heating efficiency is also good because it is heated using a heat transfer method using a heating plate.
又、シーズヒータの外管を真空室外に導出された導管に
接続してこの導管を通して電力を供給するようにしてい
るので、真空室においてもシーズヒータ内が大気に連通
されているため放電を生じず、シーズヒータを加熱手段
として用いることにより精度の良い加熱制御できる等、
大なる効果を発揮する。In addition, the outer tube of the sheathed heater is connected to a conduit led out of the vacuum chamber, and power is supplied through this conduit, so even in the vacuum chamber, the inside of the sheathed heater is communicated with the atmosphere, so electrical discharge can occur. First, by using a sheathed heater as a heating means, it is possible to control heating with high precision.
It has a great effect.
第1図及び第2図は本発明をCVD装置のロードロック
室に適用した一実施例を示し、第1図は縦断面図、第2
図は要部の斜視図、第3図、第4図は従来例の概略構成
図である。
1・・・・・・真空室、7a〜7d・・・・・・加熱プ
レート、15・・・・・・昇降駆動手段、17・・・・
・・シーズヒータ、19・・・・・・導管、22・・・
・・・リード線、24・・・・・・移載手段。1 and 2 show an embodiment in which the present invention is applied to a load lock chamber of a CVD device, and FIG. 1 is a longitudinal sectional view, and FIG.
The figure is a perspective view of a main part, and FIGS. 3 and 4 are schematic configuration diagrams of a conventional example. 1... Vacuum chamber, 7a-7d... Heating plate, 15... Lifting drive means, 17...
... Sheathed heater, 19 ... Conduit, 22 ...
... Lead wire, 24 ... Transfer means.
Claims (2)
室内に上下方向に互いに間隔を設けて配設された複数段
の加熱プレートと、これら加熱プレートの昇降駆動手段
とを備えたことを特徴とする真空加熱処理装置。(1) Equipped with a vacuum chamber that can be evacuated to a predetermined vacuum state, a plurality of heating plates arranged at intervals in the vertical direction within this vacuum chamber, and means for driving the heating plates up and down. A vacuum heat treatment device featuring:
に対して真空シール状態で接続されるとともに真空室外
に導出された導管と、導管内に挿通されたシーズヒータ
への電力供給線とを備えたことを特徴とする請求項1記
載の真空加熱処理装置。(2) A conduit that is connected in a vacuum sealed state to the outer tube of the sheathed heater built into each heating plate and led out of the vacuum chamber, and a power supply line to the sheathed heater that is inserted into the conduit. The vacuum heat treatment apparatus according to claim 1, further comprising a vacuum heat treatment apparatus.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1197748A JPH0362515A (en) | 1989-07-28 | 1989-07-28 | Vacuum heating processor |
KR1019900011498A KR930010481B1 (en) | 1989-07-28 | 1990-07-27 | Vacuum heating processor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1197748A JPH0362515A (en) | 1989-07-28 | 1989-07-28 | Vacuum heating processor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0362515A true JPH0362515A (en) | 1991-03-18 |
Family
ID=16379688
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1197748A Pending JPH0362515A (en) | 1989-07-28 | 1989-07-28 | Vacuum heating processor |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPH0362515A (en) |
KR (1) | KR930010481B1 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05206554A (en) * | 1992-01-24 | 1993-08-13 | Mitsubishi Electric Corp | Laser output control device |
JP2004111386A (en) * | 2002-08-30 | 2004-04-08 | Semiconductor Energy Lab Co Ltd | Manufacturing device, light emitting device, and preparation method of layer containing organic compound |
EP1452624A2 (en) * | 2002-10-24 | 2004-09-01 | Goodrich Corporation | Process and apparatus for batch and continuous densification by chemical vapor infiltration (CVI) |
KR100572304B1 (en) * | 1998-09-22 | 2006-08-30 | 삼성전자주식회사 | Deposition equipment for semiconductor device manufacturing |
US7820231B2 (en) | 2002-08-01 | 2010-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus |
-
1989
- 1989-07-28 JP JP1197748A patent/JPH0362515A/en active Pending
-
1990
- 1990-07-27 KR KR1019900011498A patent/KR930010481B1/en not_active IP Right Cessation
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05206554A (en) * | 1992-01-24 | 1993-08-13 | Mitsubishi Electric Corp | Laser output control device |
KR100572304B1 (en) * | 1998-09-22 | 2006-08-30 | 삼성전자주식회사 | Deposition equipment for semiconductor device manufacturing |
US7820231B2 (en) | 2002-08-01 | 2010-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus |
JP2004111386A (en) * | 2002-08-30 | 2004-04-08 | Semiconductor Energy Lab Co Ltd | Manufacturing device, light emitting device, and preparation method of layer containing organic compound |
EP1452624A2 (en) * | 2002-10-24 | 2004-09-01 | Goodrich Corporation | Process and apparatus for batch and continuous densification by chemical vapor infiltration (CVI) |
EP1452624A3 (en) * | 2002-10-24 | 2006-06-21 | Goodrich Corporation | Process and apparatus for batch and continuous densification by chemical vapor infiltration (CVI) |
Also Published As
Publication number | Publication date |
---|---|
KR910003346A (en) | 1991-02-27 |
KR930010481B1 (en) | 1993-10-25 |
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