JPH0353627B2 - - Google Patents
Info
- Publication number
- JPH0353627B2 JPH0353627B2 JP282682A JP282682A JPH0353627B2 JP H0353627 B2 JPH0353627 B2 JP H0353627B2 JP 282682 A JP282682 A JP 282682A JP 282682 A JP282682 A JP 282682A JP H0353627 B2 JPH0353627 B2 JP H0353627B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- protective layer
- photoreceptor
- particle size
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010410 layer Substances 0.000 claims description 40
- 108091008695 photoreceptors Proteins 0.000 claims description 31
- 239000011241 protective layer Substances 0.000 claims description 31
- 239000002245 particle Substances 0.000 claims description 22
- 239000000843 powder Substances 0.000 claims description 13
- 229920005989 resin Polymers 0.000 claims description 10
- 239000011347 resin Substances 0.000 claims description 10
- 150000004706 metal oxides Chemical class 0.000 claims description 9
- 229910044991 metal oxide Inorganic materials 0.000 claims description 8
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 6
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 6
- 229910052726 zirconium Inorganic materials 0.000 claims description 6
- 239000011230 binding agent Substances 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- 239000011669 selenium Substances 0.000 description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 229910000410 antimony oxide Inorganic materials 0.000 description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 6
- 229910001887 tin oxide Inorganic materials 0.000 description 6
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 5
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 239000000049 pigment Substances 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- YOBOXHGSEJBUPB-MTOQALJVSA-N (z)-4-hydroxypent-3-en-2-one;zirconium Chemical compound [Zr].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O YOBOXHGSEJBUPB-MTOQALJVSA-N 0.000 description 2
- 125000000022 2-aminoethyl group Chemical group [H]C([*])([H])C([H])([H])N([H])[H] 0.000 description 2
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 2
- 150000003754 zirconium Chemical class 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- QGKMIGUHVLGJBR-UHFFFAOYSA-M (4z)-1-(3-methylbutyl)-4-[[1-(3-methylbutyl)quinolin-1-ium-4-yl]methylidene]quinoline;iodide Chemical compound [I-].C12=CC=CC=C2N(CCC(C)C)C=CC1=CC1=CC=[N+](CCC(C)C)C2=CC=CC=C12 QGKMIGUHVLGJBR-UHFFFAOYSA-M 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- ZYAASQNKCWTPKI-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propan-1-amine Chemical compound CO[Si](C)(OC)CCCN ZYAASQNKCWTPKI-UHFFFAOYSA-N 0.000 description 1
- OXYZDRAJMHGSMW-UHFFFAOYSA-N 3-chloropropyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)CCCCl OXYZDRAJMHGSMW-UHFFFAOYSA-N 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 1
- 229910001370 Se alloy Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 229920002433 Vinyl chloride-vinyl acetate copolymer Polymers 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- QLNFINLXAKOTJB-UHFFFAOYSA-N [As].[Se] Chemical compound [As].[Se] QLNFINLXAKOTJB-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical class CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000012461 cellulose resin Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- ZZNQQQWFKKTOSD-UHFFFAOYSA-N diethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OCC)(OCC)C1=CC=CC=C1 ZZNQQQWFKKTOSD-UHFFFAOYSA-N 0.000 description 1
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 1
- AHUXYBVKTIBBJW-UHFFFAOYSA-N dimethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)C1=CC=CC=C1 AHUXYBVKTIBBJW-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- WOXXJEVNDJOOLV-UHFFFAOYSA-N ethenyl-tris(2-methoxyethoxy)silane Chemical compound COCCO[Si](OCCOC)(OCCOC)C=C WOXXJEVNDJOOLV-UHFFFAOYSA-N 0.000 description 1
- -1 fluororesin Polymers 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- POPACFLNWGUDSR-UHFFFAOYSA-N methoxy(trimethyl)silane Chemical compound CO[Si](C)(C)C POPACFLNWGUDSR-UHFFFAOYSA-N 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 239000012860 organic pigment Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- GQIUQDDJKHLHTB-UHFFFAOYSA-N trichloro(ethenyl)silane Chemical compound Cl[Si](Cl)(Cl)C=C GQIUQDDJKHLHTB-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 239000005050 vinyl trichlorosilane Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/14—Inert intermediate or cover layers for charge-receiving layers
- G03G5/147—Cover layers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
Description
【発明の詳細な説明】
本発明は電子写真感光体、特に保護層を有する
電子写真感光体に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electrophotographic photoreceptor, and particularly to an electrophotographic photoreceptor having a protective layer.
電子写真感光体はSeあるいはSe合金の蒸着膜、
ZnOあるいはCdS等の無機粒子やアゾ顔料、シア
ニン顔料等の有機顔料を結着樹脂中に分散した塗
布膜等の感光層を支持体上に設けてなるものであ
り、帯電及び露光により静電潜像を形成し、現像
後トナー像を転写紙に転写し、次いで定着して複
写物を得る電子写真方法に用いられるものであ
る。 The electrophotographic photoreceptor is made of a vapor-deposited film of Se or Se alloy,
A photosensitive layer such as a coating film in which inorganic particles such as ZnO or CdS or organic pigments such as azo pigments or cyanine pigments are dispersed in a binder resin is provided on a support. It is used in an electrophotographic method in which an image is formed, the developed toner image is transferred to transfer paper, and then fixed to obtain a copy.
感光層が表面に露出した感光体は取扱い中に表
面に傷を生じたり、あるいはトナーの目づまりを
生じたりして、感光体の寿命をそこなうものであ
つた。そこで従来この欠点を解消するため、感光
体表面に感光層とは異なる表面層を設ける試みが
なされている。表面層としては、1つには絶縁層
が用いられ、他のものとして保護層が用いられて
いる。前者の絶縁層は電気絶縁性の樹脂等の膜を
感光体表面に設けたものであり、一次帯電→二次
帯電→像露光あるいは一次帯電→逆極性二次帯電
→一様露光の工程により静電潜像が形成される。
この絶縁層を有する感光体は絶縁層を厚くでき、
又機械的強度を高くできるという利点を有するも
のの、潜像形成工程が特殊なものとなり、又潜像
の除電が困難であるという欠点を有する。後者の
保護層は絶縁層に比べ、抵抗が低い層であり、帯
電→像露光のいわゆるカールゾン法により静電潜
像を形成する。この保護層を有する感光体はカー
ルソン法により潜像が形成できるものの、残留電
位が高くなり、また絶縁層に比べ膜が薄く機械的
強度に劣るものであつた。 A photoreceptor with an exposed photosensitive layer on its surface may be scratched on the surface during handling or cause clogging of toner, thereby shortening the life of the photoreceptor. In order to overcome this drawback, conventional attempts have been made to provide a surface layer different from the photosensitive layer on the surface of the photoreceptor. As the surface layer, an insulating layer is used on the one hand, and a protective layer is used on the other hand. The former insulating layer is a film made of electrically insulating resin or the like provided on the surface of the photoreceptor, and is statically charged through the steps of primary charging → secondary charging → image exposure or primary charging → reverse polarity secondary charging → uniform exposure. A latent image is formed.
A photoreceptor with this insulating layer can have a thick insulating layer,
Further, although it has the advantage of increasing mechanical strength, it has the disadvantage that the latent image forming process is a special process and that it is difficult to remove the charge from the latent image. The latter protective layer has a lower resistance than the insulating layer, and forms an electrostatic latent image by the so-called Carlson method of charging→image exposure. Although a latent image can be formed on a photoreceptor having this protective layer by the Carlson method, the residual potential is high, and the film is thinner than an insulating layer and has inferior mechanical strength.
そこで第四級アンモニウム塩等の電気抵抗調節
剤を保護層中に添加し、保護層表面あるいは内部
への電荷の蓄積を防止する試みがなされている。
この試みによりある程度残留電位を小さくするこ
とができるものの帯電電位が湿度の影響を受けて
変化してしまうという欠点を有する。更に帯電し
た保護層表面の電荷が引き続き行なわれる像露光
工程あるいは現像工程迄の間に感光層内部に注入
されて放電してしまい、潜像電位が低下するとい
う欠点を有する。 Therefore, attempts have been made to add electrical resistance modifiers such as quaternary ammonium salts to the protective layer to prevent the accumulation of charges on the surface or inside the protective layer.
Although this attempt makes it possible to reduce the residual potential to some extent, it has the drawback that the charged potential changes due to the influence of humidity. Furthermore, the charge on the surface of the protective layer is injected into the photosensitive layer and discharged during the subsequent image exposure step or development step, resulting in a reduction in the latent image potential.
本発明はこの後者の保護層を有する感光体の改
良に関するものであり、これら従来の欠点を解消
した感光体を提供することを目的とする。 The present invention relates to the improvement of a photoreceptor having this latter protective layer, and an object of the present invention is to provide a photoreceptor that eliminates these conventional drawbacks.
本発明の目的は光導電層、ジルコニウム錯体と
シランカツプリング剤とを含む硬化物からなる中
間層、および導電性金属酸化物を結着樹脂中に分
散した保護層を導電性支持体上に順次積層してな
り、前記導電性酸化物の微粉末はその粒径分布が
粒径5μm以上のもの5重量%以下で粒径0.03μm
以下のもの20重量%以下であることを特徴とする
電子写真感光体により達成することができる。 The object of the present invention is to sequentially form a photoconductive layer, an intermediate layer made of a cured product containing a zirconium complex and a silane coupling agent, and a protective layer in which a conductive metal oxide is dispersed in a binder resin on a conductive support. The conductive oxide fine powder has a particle size distribution of 5% by weight or less of particles with a particle size of 5 μm or more and a particle size of 0.03 μm.
This can be achieved by using an electrophotographic photoreceptor characterized by containing 20% by weight or less of the following:
本発明の電子写真用感光体の構成を添付図面に
示す。図中、1は透明保護層、2はジルコニウム
錯体とシランカツプリング剤とを含む硬化物から
なる中間層、3は主としてSeからなる光導電層
であり、4は導電性支持体である。 The structure of the electrophotographic photoreceptor of the present invention is shown in the accompanying drawings. In the figure, 1 is a transparent protective layer, 2 is an intermediate layer made of a cured product containing a zirconium complex and a silane coupling agent, 3 is a photoconductive layer mainly made of Se, and 4 is a conductive support.
保護層1としては有機高分子に導電性金属酸化
物微粉末を分散した電子伝導性材料が用いられ
る。特に平均粒径が0.3μm、好ましくは0.15μm
の金属酸化物微粉末を用いた場合に著しい効果が
得られる。即ち、平均粒径が0.3μm以上では不透
明であるが、0.3μm以下になると実質的に透明に
なり、光の透過が妨げられない。この微粉末はそ
の粒径分布が、粒径5μm以上のもの5重量%以
下で粒径0.03μm以下のもの20重量%以下である
ものが用いられる。粒径5μm以上のものを5重
量%以上含むと微粉末の分散性が悪くなり、保護
層表面に微細な凹凸を生じクリーニング性が低下
し、又保護層の透明度が低下する。粒径0.03μm
以下のものを20重量%以上含むと感光体の残留電
位が上昇する。 As the protective layer 1, an electronically conductive material in which conductive metal oxide fine powder is dispersed in an organic polymer is used. Especially the average particle size is 0.3μm, preferably 0.15μm
Significant effects can be obtained when using fine metal oxide powder. That is, when the average particle size is 0.3 μm or more, it is opaque, but when it is 0.3 μm or less, it becomes substantially transparent, and light transmission is not hindered. The fine powder used has a particle size distribution in which 5% by weight or less of particles with a particle size of 5 μm or more and 20% by weight or less of particles with a particle size of 0.03 μm or less. If 5% by weight or more of particles with a particle diameter of 5 μm or more is contained, the dispersibility of the fine powder will be poor, causing fine irregularities on the surface of the protective layer, resulting in a decrease in cleaning properties and a decrease in the transparency of the protective layer. Particle size 0.03μm
If the following substances are contained in an amount of 20% by weight or more, the residual potential of the photoreceptor increases.
なお、このような保護層に用いられる材料を具
体的に挙げると酸化亜鉛、酸化チタン、酸化錫、
酸化ビスマス、酸化インジウム、酸化アンチモン
等の金属酸化物の粉末;酸化錫と酸化アンチモン
を単一粒子中に含有する粉末等がある。金属酸化
物の樹脂に対する添加量は3〜65重量%の間にあ
ることが望ましい。 Specific materials used for such a protective layer include zinc oxide, titanium oxide, tin oxide,
There are powders of metal oxides such as bismuth oxide, indium oxide, and antimony oxide; powders containing tin oxide and antimony oxide in a single particle, and the like. The amount of metal oxide added to the resin is preferably between 3 and 65% by weight.
好ましい保護層は導電性金属酸化物粉末を結着
樹脂中に分散した層であり、導電性金属酸化物粉
末としては特に酸化スズと酸化アンチモンとを同
一粒子中に含有する粉末が好ましい。ここで同一
粒子中に酸化スズと酸化アンチモンとを含有する
とは酸化スズと酸化アンチモンとの固溶体あるい
は融着体を意味する。 A preferred protective layer is a layer in which conductive metal oxide powder is dispersed in a binder resin, and the conductive metal oxide powder is particularly preferably a powder containing tin oxide and antimony oxide in the same particle. Here, containing tin oxide and antimony oxide in the same particle means a solid solution or fused body of tin oxide and antimony oxide.
上記の粉末を分散する樹脂としては被膜を形成
する能力を有する全ての樹脂を用いることができ
る。具体的にはポリエステル樹脂、ポリカーボネ
ート樹脂、フツ素樹脂、ポリスチレン樹脂、セル
ロース樹脂、塩化ビニル樹脂、ポリウレタン樹
脂、アクリル樹脂、エポキシ樹脂、シリコン樹
脂、アルキツド樹脂、塩ビ−酢ビ共重合体樹脂等
を用いることができる。金属酸化物の分散層の膜
厚は2〜30μm、特に5〜15μmの間にあること
が好ましい。 As the resin for dispersing the above powder, any resin capable of forming a film can be used. Specifically, polyester resin, polycarbonate resin, fluororesin, polystyrene resin, cellulose resin, vinyl chloride resin, polyurethane resin, acrylic resin, epoxy resin, silicone resin, alkyd resin, vinyl chloride-vinyl acetate copolymer resin, etc. are used. be able to. The thickness of the metal oxide dispersed layer is preferably between 2 and 30 μm, particularly between 5 and 15 μm.
保護層の形成はスプレー法、デイビイング法、
ブレード法等公知の技術を用いることによつて行
うことができる。 The protective layer can be formed by spraying method, dabbing method,
This can be done by using a known technique such as the blade method.
2の中間層は、少なくとも上層の低絶縁性であ
る保護層1よりも高抵抗でなければならない。ま
た2の中間層は、少なくとも上層の保護層の塗布
に用いる溶剤に浸されるものであつてはならな
い。 The intermediate layer 2 must have a higher resistance than at least the upper protective layer 1, which has a low insulation property. Further, the intermediate layer 2 must not be immersed in at least the solvent used for coating the upper protective layer.
この中間層は表面からの電荷注入を抑止し、静
電コントラストを高くするバリヤー層としての役
割の他に光導電体と保護層との接着層としての機
能を持たせることもできる。 In addition to serving as a barrier layer that suppresses charge injection from the surface and increases electrostatic contrast, this intermediate layer can also function as an adhesive layer between the photoconductor and the protective layer.
中間層はジルコニウム錯体とシランカツプリン
グ剤から成る溶液の乾燥硬化物によつて形成され
る。これらのジルコニウム錯体とシランカツプリ
ング剤は任意の割合でまぜ合わせることが可能で
ある。 The intermediate layer is formed by a dried and cured solution of a zirconium complex and a silane coupling agent. These zirconium complexes and silane coupling agents can be mixed in any proportion.
中間層に適したジルコニウム錯体としては、例
えばジルコニウムアセチルアセトネート、ジルコ
ニウムトリフロロアセチルアセトネート等のアセ
チルアセトン錯体がある。また中間層に適したシ
ランカツプリング剤としては、例えば以下のもの
があげられる。ビニルトリクロルシラン、ビニル
トリエトキシシラン、ビニルトリス(β−メトキ
シエトキシ)シラン、γ−グリシドキシプロピル
トリメトキシシラン、γ−メタアクリロキシプロ
ピルトリメトキシシラン、N−β(アミノエチル)
γ−アミノプロピルトリメトキシシラン、N−β
(アミノエチル)γ−アミノプロピルメチルジメ
トキシシラン、γ−クロロプロピルトリメトキシ
シラン、γ−メルカプトプロピルトリメトキシシ
ラン、γ−アミノプロピルトリエトキシシラン、
メチルトリメトキシシラン、ジメチルジメトキシ
シラン、トリメチルモノメトキシシラン、ジフエ
ニルジメトキシシラン、ジフエニルジエトキシシ
ラン、モノフエニルトリメトキシシラン。 Examples of zirconium complexes suitable for the intermediate layer include acetylacetone complexes such as zirconium acetylacetonate and zirconium trifluoroacetylacetonate. Examples of silane coupling agents suitable for the intermediate layer include the following. Vinyltrichlorosilane, vinyltriethoxysilane, vinyltris(β-methoxyethoxy)silane, γ-glycidoxypropyltrimethoxysilane, γ-methacryloxypropyltrimethoxysilane, N-β(aminoethyl)
γ-aminopropyltrimethoxysilane, N-β
(aminoethyl) γ-aminopropylmethyldimethoxysilane, γ-chloropropyltrimethoxysilane, γ-mercaptopropyltrimethoxysilane, γ-aminopropyltriethoxysilane,
Methyltrimethoxysilane, dimethyldimethoxysilane, trimethylmonomethoxysilane, diphenyldimethoxysilane, diphenyldiethoxysilane, monophenyltrimethoxysilane.
中間層の膜厚は任意に設定されるが、10μm以
下特に1μm以下が好適である。この中間層の形
成は、スプレー塗布、浸漬塗布、ナイフ塗布、ロ
ール塗布等の適宜の方法で塗布した後、50℃〜
200℃の温度に加熱して乾燥硬化することによつ
て行うことができる。 Although the thickness of the intermediate layer can be set arbitrarily, it is preferably 10 μm or less, particularly 1 μm or less. The formation of this intermediate layer is carried out at 50°C to
This can be done by drying and curing by heating to a temperature of 200°C.
光導電層3は光照射による電荷発生能と電荷輸
送能とを併せ持つ層であり、単層でもあるいは2
層以上の積層であつても良い。光導電層は主とし
てセレンによつて形成される。例えばセレン、セ
レン−テルル、セレン−ヒ素、セレン−テルル−
ヒ素、酸化亜鉛、酸化チタン、硫化カドミウム、
セレン化カドミウム、硫化亜鉛、無定形シリコン
などの無機物質、またポリビニルカルバゾール及
びその誘導体、芳香族アミン類、アゾ顔料、フタ
ロシアニン、オキサゾール、トリアゾール、イミ
ダゾール、ブロムピレンなどの有機物質が挙げら
れる。この光導電層は真空蒸着法等の公知の方法
によつて形成させることができる。光導電層の膜
厚は任意に設定されるが5μm〜200μm、特に20
〜100μmが好適である。 The photoconductive layer 3 is a layer that has both charge generation ability and charge transport ability by light irradiation, and may be a single layer or two layers.
It may be laminated with more than one layer. The photoconductive layer is formed primarily of selenium. For example, selenium, selenium-tellurium, selenium-arsenic, selenium-tellurium
Arsenic, zinc oxide, titanium oxide, cadmium sulfide,
Examples include inorganic substances such as cadmium selenide, zinc sulfide, and amorphous silicon, and organic substances such as polyvinylcarbazole and its derivatives, aromatic amines, azo pigments, phthalocyanine, oxazole, triazole, imidazole, and brompyrene. This photoconductive layer can be formed by a known method such as a vacuum deposition method. The thickness of the photoconductive layer can be set arbitrarily, but it is 5 μm to 200 μm, especially 20 μm.
~100 μm is suitable.
次に比較例及び実施例をあげて本発明の電子写
真感光体を説明する。 Next, the electrophotographic photoreceptor of the present invention will be explained with reference to comparative examples and examples.
比較例 1
アルミパイプ上に設けたAs2Se3蒸着膜(60μm
厚)上に、ポリアクリルウレタン65重量部と平均
粒径0.3μmの酸化スズ/酸化アンチモン微粉末35
重量部をセロソルブアセテートと酢酸ブチルとと
もにボールミルに入れて分散させ、これに硬化剤
を適量加えたものを塗布、乾燥し、10μm保護層
を有する感光体を得た。この保護層を塗布する前
のAs2Se3蒸着膜を正帯電させ、初期電位を900V
にし、これを460mmの波長の光で露光する操作を
毎分40回の速度で5分間くり返した。この時、残
留電位は0Vで安定していた。一方、保護層を設
けたAs2Se3蒸着膜を前記の条件で帯電、露光し
たところ、初期電位120V、残留電位55Vで安定
していた。従つて保護層を有するAs2Se3感光体
はほとんど静電コントラストを持たなかつた。Comparative example 1 As 2 Se 3 vapor deposited film (60 μm) provided on aluminum pipe
65 parts by weight of polyacrylic urethane and 35 parts of tin oxide/antimony oxide fine powder with an average particle size of 0.3 μm.
Parts by weight were placed in a ball mill together with cellosolve acetate and butyl acetate to disperse them, and an appropriate amount of a curing agent was added thereto, which was coated and dried to obtain a photoreceptor having a 10 μm protective layer. The As 2 Se 3 vapor deposited film before this protective layer is applied is positively charged, and the initial potential is set to 900 V.
This operation of exposing the sample to light with a wavelength of 460 mm was repeated for 5 minutes at a rate of 40 times per minute. At this time, the residual potential was stable at 0V. On the other hand, when the As 2 Se 3 vapor-deposited film provided with the protective layer was charged and exposed under the above conditions, the initial potential was 120V and the residual potential was stable at 55V. Therefore, the As 2 Se 3 photoreceptor with the protective layer had almost no electrostatic contrast.
実施例 1
比較例1と同じ方法でアルミパイプ上に
As2Se3の蒸着膜を形成させた。次にその上にジ
ルコニウムアセチルアセトネート2重量部、γ−
メタアクリロキシプロピルトリメトキシシラン1
重量部、n−ブタノール20重量部からなる溶液を
スプレー塗布し、100℃にて2時間乾燥して、
0.6μm厚の中間層を設けた。次いでこの上に比較
例1と同じ保護層を10μm厚に設け、比較例1と
同じ方法で帯電露光を繰り返したところ、初期電
位960V、残留電位55Vであつた。従つてこの感
光体の静電コントラストは905Vであり、保護層
を持たない感光体と同等の値であつた。又、この
感光体を用いてコピーを採つたところ、背景部に
汚れのない鮮明な画質が得られた。この解像力は
7lp/mmであり、保護層を持たない感光体と同等
である。さらにこの感光体は高温高湿(30℃、85
%RH)環境下においても低温低湿(10℃、15%
RH)環境下においても画質に変化がなく良好な
コピーを得ることが出来た。又、この感光体をブ
レードクリーニング装置及び用紙剥離部に常時感
光体と圧接している鋼鉄製の剥離爪を有する複写
機に入れて100000枚の複写を行つたところ画質に
変化はなく、又保護層表面にも傷を生ずることな
く、良好な画質を得ることができた。Example 1 On an aluminum pipe using the same method as Comparative Example 1
A vapor deposited film of As 2 Se 3 was formed. Next, 2 parts by weight of zirconium acetylacetonate, γ-
Methacryloxypropyltrimethoxysilane 1
A solution consisting of 1 part by weight and 20 parts by weight of n-butanol was spray applied, dried at 100°C for 2 hours,
An intermediate layer with a thickness of 0.6 μm was provided. Next, the same protective layer as in Comparative Example 1 was provided thereon to a thickness of 10 μm, and charging exposure was repeated in the same manner as in Comparative Example 1, resulting in an initial potential of 960V and a residual potential of 55V. Therefore, the electrostatic contrast of this photoreceptor was 905V, which was the same value as a photoreceptor without a protective layer. When copies were made using this photoreceptor, clear images with no stains in the background were obtained. This resolution is
7 lp/mm, which is equivalent to a photoreceptor without a protective layer. In addition, this photoreceptor can be used at high temperatures and high humidity (30°C, 85°C).
%RH) environment with low temperature and low humidity (10℃, 15%
RH) environment, we were able to obtain good copies with no change in image quality. In addition, when this photoreceptor was placed in a copying machine with a blade cleaning device and a paper peeling section that has a steel peeling claw that is in constant pressure contact with the photoreceptor and 100,000 copies were made, there was no change in image quality, and there was no change in the protection. Good image quality could be obtained without causing any scratches on the layer surface.
比較例 2
比較例1と同様に作成したAs2Se3蒸着膜に中
間層及び保護層を設けることなく帯電、露光を繰
り返したところ、比較例1の場合と同様に初期電
位910V、残留電位0Vで安定していた。この感光
体を実施例1と同一の複写機に入れて複写を行つ
たところ地汚れのない鮮明な画像が得られた。さ
らに複写を続けたところ、約30000枚目のコピー
付近から、微細な欠陥が認められた。すなわち、
ベタ黒部に極く細い白筋が発生し、複写枚数と共
に白筋が増加する兆しがみられたが文字部では白
筋はほとんどみられなかつた。しかし100000枚コ
ピー後ではベタ黒部で微細ではあるがかなり多数
の白筋がみられ、文字部にも白筋がみられた。Comparative Example 2 When an As 2 Se 3 vapor-deposited film prepared in the same manner as Comparative Example 1 was repeatedly charged and exposed without providing an intermediate layer or a protective layer, the initial potential was 910 V and the residual potential was 0 V, as in Comparative Example 1. It was stable. When this photoreceptor was placed in the same copying machine as in Example 1 and copied, a clear image without background smudge was obtained. When copying continued, a small defect was found around the 30,000th copy. That is,
Very thin white streaks appeared in the solid black areas, and there were signs that the white streaks increased with the number of copies, but there were almost no white streaks in the text areas. However, after copying 100,000 sheets, a considerable number of fine white streaks were seen in the solid black areas, and white streaks were also seen in the text.
実施例 2
比較例1と同じ方法でアルミパイプ上に
As2Se3の蒸着膜を形成させ、その上にジルコニ
ウムトリフロロアセチルアセトネート1重量部、
γ−グリシドキシプロピルトリメトキシシラン1
重量部、n−ブタノール20重量部からなる溶液を
スプレー塗布し、100℃にて2時間乾燥して0.5μ
m厚の中間層を設けた。次いでこの上に比較例1
と同じ保護層を10μm厚に設け、比較例1と同じ
方法で、帯電、露光を繰り返したところ初期電位
955V、残留電位55Vであつた。従つてこの感光
体の静電コントラストは900Vであり、保護層を
持たない感光体及び実施例1の感光体と同等の値
であつた。又、この感光体を用いて実施例1の場
合と同様にコピーテスト、環境テスト、耐久テス
トを行つたところ同様に好結果を得た。Example 2 On an aluminum pipe using the same method as Comparative Example 1
A vapor deposited film of As 2 Se 3 was formed, and 1 part by weight of zirconium trifluoroacetylacetonate was added thereon.
γ-glycidoxypropyltrimethoxysilane 1
A solution consisting of 1 part by weight and 20 parts by weight of n-butanol was spray applied and dried at 100°C for 2 hours to give a 0.5μ
An intermediate layer of m thickness was provided. Then, on top of this, Comparative Example 1
The same protective layer was provided with a thickness of 10 μm, and when charging and exposure were repeated in the same manner as in Comparative Example 1, the initial potential was
The voltage was 955V, and the residual potential was 55V. Therefore, the electrostatic contrast of this photoreceptor was 900V, which was the same value as the photoreceptor without a protective layer and the photoreceptor of Example 1. Further, when this photoreceptor was used to perform a copy test, an environmental test, and a durability test in the same manner as in Example 1, similar good results were obtained.
図面は本発明の電子写真用感光体の構成を示
す。
図中符号:1……低抵抗透明保護層;2……中
間層;3……光導電層;4……導電性支持体。
The drawings show the structure of the electrophotographic photoreceptor of the present invention. Symbols in the figure: 1...Low resistance transparent protective layer; 2...Intermediate layer; 3...Photoconductive layer; 4...Electroconductive support.
Claims (1)
リング剤とを含む硬化物からなる中間層、および
導電性金属酸化物を結着樹脂中に分散した保護層
を導電性支持体上に順次積層してなり、前記導電
性酸化物の微粉末はその粒径分布が粒径5μm以
上のもの5重量%以下で粒径0.03μm以下のもの
20重量%以下であることを特徴とする電子写真感
光体。1 A photoconductive layer, an intermediate layer made of a cured product containing a zirconium complex and a silane coupling agent, and a protective layer in which a conductive metal oxide is dispersed in a binder resin are sequentially laminated on a conductive support. The conductive oxide fine powder has a particle size distribution of 5% by weight or less of particles with a particle size of 5 μm or more and a particle size of 0.03 μm or less.
An electrophotographic photoreceptor characterized in that the content is 20% by weight or less.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP282682A JPS58121045A (en) | 1982-01-13 | 1982-01-13 | Electrophotographic receptor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP282682A JPS58121045A (en) | 1982-01-13 | 1982-01-13 | Electrophotographic receptor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58121045A JPS58121045A (en) | 1983-07-19 |
JPH0353627B2 true JPH0353627B2 (en) | 1991-08-15 |
Family
ID=11540213
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP282682A Granted JPS58121045A (en) | 1982-01-13 | 1982-01-13 | Electrophotographic receptor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58121045A (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63239459A (en) * | 1986-11-28 | 1988-10-05 | Ricoh Co Ltd | Electrophotographic sensitive body |
JPS6448065A (en) * | 1987-08-19 | 1989-02-22 | Ricoh Kk | Electrophotographic sensitive body |
JP2719135B2 (en) * | 1987-09-08 | 1998-02-25 | 株式会社リコー | Electrophotographic photoreceptor |
JP2742264B2 (en) * | 1988-06-03 | 1998-04-22 | 株式会社リコー | Electrophotographic photoreceptor |
JPH06103401B2 (en) * | 1989-08-16 | 1994-12-14 | 富士ゼロックス株式会社 | Electrophotographic photoreceptor |
-
1982
- 1982-01-13 JP JP282682A patent/JPS58121045A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS58121045A (en) | 1983-07-19 |
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