JPH03502135A - 化学感応性変換器 - Google Patents
化学感応性変換器Info
- Publication number
- JPH03502135A JPH03502135A JP1508448A JP50844889A JPH03502135A JP H03502135 A JPH03502135 A JP H03502135A JP 1508448 A JP1508448 A JP 1508448A JP 50844889 A JP50844889 A JP 50844889A JP H03502135 A JPH03502135 A JP H03502135A
- Authority
- JP
- Japan
- Prior art keywords
- support plate
- converter
- transducer
- electrode
- diaphragm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4148—Integrated circuits therefor, e.g. fabricated by CMOS processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electrochemistry (AREA)
- Molecular Biology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
Description
Claims (16)
- 1.流体(11)の1つの化学的性質を選択定量する化学感応性変換器(10) であって、この化学的性質に感応する隔膜(29)で覆われた付属の測定電極( 19)にそのデードが接続してある少なくとも1個の電界効果トランジスタと、 隔膜(単・複)(29)を除き変換器(10)全体を流体(11)から隔離する カプセル(30)とを備えたものにおいて、片面に測定電極(19)、反対面に 電界効果トランジスタを含む増幅回路(22)を配置した支持板(18)が設け てあり、測定電極(1)が支持板(18)に挿通した導体(24)を介し電界効 果トランジスタのゲートと電気的に接続してあることを特徴とする変換器。
- 2.支持板(18)が絶縁材料からなることを特徴とする請求の範囲1記載の変 換器。
- 3.支持板がSiO2,Al2O3等の磁器材料、ガラス、エポキシ樹脂又は合 成樹脂材料からなることを特徴とする請求の範囲2記載の変換器。
- 4.増幅回路(22)と支持板(18)との間に導体膜(20)が測定電極(1 9)に向き合わせて配置してあることを特徴とする請求の範囲2又は3記載の変 換器。
- 5.測定電極(19)と電界効果トランジスタとを電気的に接続(24)するた め支持板(18)に直径0.1mm未満の穴が穿設してあり、少なくとも穴の壁 が導電性材料で被覆してあることを特徴とする請求の範囲1乃至4のいずれか1 項記載の変換器。
- 6.測定電極(19)、支持板(18)に挿通した導体(24)及び場合によっ ては導体膜(20)が流体に対し化学的に不活性な材料からなることを特徴とす る請求の範囲1乃至5のいずれか1項記載の変換器。
- 7.前記材料が金,白金,銀,銅,パラジウム又はそれらの合金、又は導電性高 分子であることを特徴とする請求の範囲6記載の変換器。
- 8.支持板(18)に被著したマスク板で測定電極(19)の面を制限したこと を特徴とする請求の範囲1乃至7のいずれか1項記載の変換器。
- 9.マスク板(27)が穴を覆うことを特徴とする請求の範囲5に合わせて請求 の範囲8記載の変換器。
- 10.マスク板(27)と支持板(18)との間に穴を覆う絶縁体膜が配置して あることを特徴とする請求の範囲9記載の変換器。
- 11.絶縁体膜がSiO2,ポリイミド,エポキシ樹脂,アルミナ又はシリコー ン樹脂からなることを特徴とする請求の範囲10記載の変換器。
- 12.マスク板(27)が取外し可能であることを特徴とする請求の範囲1乃至 11のいずれか1項記載の変換器。
- 13.隔膜(29)が(電気)化学反応により又は溶解した形で被着可能である ことを特徴とする請求の範囲1乃至12のいずれか1項記載の変換器。
- 14.支持板(18)、マスク板(27)、そして増幅回路(22)をカプセル 封入するカバー(30)が同じ絶縁材料からなることを特徴とする請求の範囲1 乃至13のいずれか1項記載の変換器。
- 15.増幅回路(22)を取り囲み支持板(18)とカバー(30)とにより囲 繞された空間に不活性ガスを圧縮充填したことを特徴とする請求の範囲1乃至1 4のいずれか1項記載の変換器。
- 16.それが活性測定電極と不活性電極とを備えた差動センサ対を少なくとも1 つ有することを特徴とする請求の範囲1乃至15のいずれか1項記載の変換器。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3827314.4 | 1988-08-11 | ||
DE3827314A DE3827314C1 (ja) | 1988-08-11 | 1988-08-11 | |
PCT/DE1989/000525 WO1990001694A1 (de) | 1988-08-11 | 1989-08-09 | Chemosensitiver wandler |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH03502135A true JPH03502135A (ja) | 1991-05-16 |
JPH07109413B2 JPH07109413B2 (ja) | 1995-11-22 |
Family
ID=6360663
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1508448A Expired - Lifetime JPH07109413B2 (ja) | 1988-08-11 | 1989-08-09 | 化学感応性変換器 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5039390A (ja) |
EP (1) | EP0382831B1 (ja) |
JP (1) | JPH07109413B2 (ja) |
DE (2) | DE3827314C1 (ja) |
WO (1) | WO1990001694A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005022142A1 (ja) * | 2003-08-29 | 2005-03-10 | National Institute For Materials Science | 生体分子検出素子及びそれを用いた核酸解析方法 |
WO2005022134A1 (ja) * | 2003-08-29 | 2005-03-10 | Japan Science And Technology Agency | 電界効果トランジスタ及び単一電子トランジスタ並びにそれを用いたセンサ |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5648416A (en) * | 1992-01-21 | 1997-07-15 | Monsanto Company | Corrosion resistant paint |
DE4228609C1 (de) * | 1992-08-28 | 1994-01-20 | Fraunhofer Ges Forschung | Vorrichtung zur Messung von Ionenkonzentrationen in Lösungen |
SE510733C2 (sv) | 1995-01-03 | 1999-06-21 | Chemel Ab | Kemisk sensor baserad på utbytbar igenkänningskomponent samt användning därav |
US5944970A (en) * | 1997-04-29 | 1999-08-31 | Honeywell Inc. | Solid state electrochemical sensors |
DE19857953C2 (de) * | 1998-12-16 | 2001-02-15 | Conducta Endress & Hauser | Vorrichtung zum Messen der Konzentration von Ionen in einer Meßflüssigkeit |
US6387724B1 (en) | 1999-02-26 | 2002-05-14 | Dynamics Research Corporation | Method of fabricating silicon-on-insulator sensor having silicon oxide sensing surface |
US6483125B1 (en) | 2001-07-13 | 2002-11-19 | North Carolina State University | Single electron transistors in which the thickness of an insulating layer defines spacing between electrodes |
US6653653B2 (en) | 2001-07-13 | 2003-11-25 | Quantum Logic Devices, Inc. | Single-electron transistors and fabrication methods in which a projecting feature defines spacing between electrodes |
US8506550B2 (en) * | 2001-09-07 | 2013-08-13 | Medtronic Minimed, Inc. | Method and system for non-vascular sensor implantation |
US8465466B2 (en) * | 2001-10-23 | 2013-06-18 | Medtronic Minimed, Inc | Method and system for non-vascular sensor implantation |
US6673717B1 (en) | 2002-06-26 | 2004-01-06 | Quantum Logic Devices, Inc. | Methods for fabricating nanopores for single-electron devices |
US7736309B2 (en) * | 2002-09-27 | 2010-06-15 | Medtronic Minimed, Inc. | Implantable sensor method and system |
CN119165030A (zh) * | 2010-06-30 | 2024-12-20 | 生命科技公司 | 阵列列积分器 |
IN2013MU03601A (ja) | 2013-11-18 | 2015-07-31 | Indian Oil Corp Ltd | |
WO2015071774A1 (en) | 2013-11-18 | 2015-05-21 | Indian Oil Corporation Limited | A process and a system for enhancing liquid yield of heavy hydrocarbon feed stock |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4020830A (en) * | 1975-03-12 | 1977-05-03 | The University Of Utah | Selective chemical sensitive FET transducers |
US4133735A (en) * | 1977-09-27 | 1979-01-09 | The Board Of Regents Of The University Of Washington | Ion-sensitive electrode and processes for making the same |
US4180771A (en) * | 1977-12-02 | 1979-12-25 | Airco, Inc. | Chemical-sensitive field-effect transistor |
US4225410A (en) * | 1978-12-04 | 1980-09-30 | Technicon Instruments Corporation | Integrated array of electrochemical sensors |
GB2077439B (en) * | 1980-04-28 | 1984-03-28 | Kuraray Co | Compensating temperature-dependent characteristic changes in ion-sensitive fet transducers |
GB2096825A (en) * | 1981-04-09 | 1982-10-20 | Sibbald Alastair | Chemical sensitive semiconductor field effect transducer |
GB2096824A (en) * | 1981-04-09 | 1982-10-20 | Sibbald Alastair | Chemically sensitive field effect transistor |
GB2111215A (en) * | 1981-10-31 | 1983-06-29 | Alastair Sibbald | Electrochemical sensor assembly |
US4449011A (en) * | 1982-01-08 | 1984-05-15 | Critikon, Inc. | Method and apparatus for encapsulation of chemically sensitive field effect device |
DE3330975A1 (de) * | 1983-08-27 | 1985-03-21 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren und anordnung zur kapselung eines halbleiterbauelementes |
DE3430941C2 (de) * | 1983-08-29 | 1987-04-09 | Hitachi, Ltd., Tokio/Tokyo | Chemisch empfindlicher Feldeffekttransistor-Sensor |
US4505799A (en) * | 1983-12-08 | 1985-03-19 | General Signal Corporation | ISFET sensor and method of manufacture |
US4508613A (en) * | 1983-12-19 | 1985-04-02 | Gould Inc. | Miniaturized potassium ion sensor |
GB8414036D0 (en) * | 1984-06-01 | 1984-07-04 | Emi Ltd | Field effect devices |
GB8428138D0 (en) * | 1984-11-07 | 1984-12-12 | Sibbald A | Semiconductor devices |
US4921591A (en) * | 1987-10-13 | 1990-05-01 | Taiyo Yuden Co., Ltd. | Ion sensors and their divided parts |
-
1988
- 1988-08-11 DE DE3827314A patent/DE3827314C1/de not_active Expired
-
1989
- 1989-08-09 WO PCT/DE1989/000525 patent/WO1990001694A1/de active IP Right Grant
- 1989-08-09 JP JP1508448A patent/JPH07109413B2/ja not_active Expired - Lifetime
- 1989-08-09 US US07/466,303 patent/US5039390A/en not_active Expired - Fee Related
- 1989-08-09 DE DE8989908966T patent/DE58903464D1/de not_active Expired - Lifetime
- 1989-08-09 EP EP89908966A patent/EP0382831B1/de not_active Expired - Lifetime
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005022142A1 (ja) * | 2003-08-29 | 2005-03-10 | National Institute For Materials Science | 生体分子検出素子及びそれを用いた核酸解析方法 |
WO2005022134A1 (ja) * | 2003-08-29 | 2005-03-10 | Japan Science And Technology Agency | 電界効果トランジスタ及び単一電子トランジスタ並びにそれを用いたセンサ |
US8502277B2 (en) | 2003-08-29 | 2013-08-06 | Japan Science And Technology Agency | Field-effect transistor, single-electron transistor and sensor using the same |
US8766326B2 (en) | 2003-08-29 | 2014-07-01 | Japan Science And Technology Agency | Field-effect transistor, single-electron transistor and sensor |
US8772099B2 (en) | 2003-08-29 | 2014-07-08 | Japan Science And Technology Agency | Method of use of a field-effect transistor, single-electron transistor and sensor |
US9506892B2 (en) | 2003-08-29 | 2016-11-29 | Japan Science And Technology Agency | Field-effect transistor, single-electron transistor and sensor using the same |
Also Published As
Publication number | Publication date |
---|---|
JPH07109413B2 (ja) | 1995-11-22 |
EP0382831B1 (de) | 1993-02-03 |
US5039390A (en) | 1991-08-13 |
DE58903464D1 (en) | 1993-03-18 |
DE3827314C1 (ja) | 1989-10-19 |
EP0382831A1 (de) | 1990-08-22 |
WO1990001694A1 (de) | 1990-02-22 |
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