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JPH0343746U - - Google Patents

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Publication number
JPH0343746U
JPH0343746U JP10527289U JP10527289U JPH0343746U JP H0343746 U JPH0343746 U JP H0343746U JP 10527289 U JP10527289 U JP 10527289U JP 10527289 U JP10527289 U JP 10527289U JP H0343746 U JPH0343746 U JP H0343746U
Authority
JP
Japan
Prior art keywords
conductivity type
high resistivity
low concentration
layer
resistivity layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10527289U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10527289U priority Critical patent/JPH0343746U/ja
Publication of JPH0343746U publication Critical patent/JPH0343746U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本案の一実施例の略断面図、第2図は
従来の一例の略断面図である。 1……シリコン基板、2……P型拡散層、3
……N型拡散層、4……N型拡散層、5……ア
ノード、6……酸化膜、7……カソード。
FIG. 1 is a schematic sectional view of an embodiment of the present invention, and FIG. 2 is a schematic sectional view of a conventional example. 1...Silicon substrate, 2...P + type diffusion layer, 3
... N type diffusion layer, 4 ... N + type diffusion layer, 5 ... anode, 6 ... oxide film, 7 ... cathode.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 第一の導電型の低濃度の高比抵抗層の表面に形
成された複数の受光部となる隣接する第二の導電
型の拡散層の間に、高比抵抗層の濃度よりは高い
低濃度の第一の導電型の拡散層を設けたことを特
徴とするフオトダイオード。
A low concentration higher than the concentration of the high resistivity layer is formed between adjacent diffusion layers of the second conductivity type, which are formed on the surface of the low concentration high resistivity layer of the first conductivity type and serve as a plurality of light receiving parts. A photodiode characterized in that a diffusion layer of a first conductivity type is provided.
JP10527289U 1989-09-07 1989-09-07 Pending JPH0343746U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10527289U JPH0343746U (en) 1989-09-07 1989-09-07

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10527289U JPH0343746U (en) 1989-09-07 1989-09-07

Publications (1)

Publication Number Publication Date
JPH0343746U true JPH0343746U (en) 1991-04-24

Family

ID=31654038

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10527289U Pending JPH0343746U (en) 1989-09-07 1989-09-07

Country Status (1)

Country Link
JP (1) JPH0343746U (en)

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