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JPH0334472A - Amorphous semiconductor photovoltaic element - Google Patents

Amorphous semiconductor photovoltaic element

Info

Publication number
JPH0334472A
JPH0334472A JP1166995A JP16699589A JPH0334472A JP H0334472 A JPH0334472 A JP H0334472A JP 1166995 A JP1166995 A JP 1166995A JP 16699589 A JP16699589 A JP 16699589A JP H0334472 A JPH0334472 A JP H0334472A
Authority
JP
Japan
Prior art keywords
substrate
output terminal
amorphous semiconductor
cut
surface side
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1166995A
Other languages
Japanese (ja)
Other versions
JP2620884B2 (en
Inventor
Takeshi Ueno
武史 上野
Koji Monno
門野 耕治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiyo Yuden Co Ltd
Original Assignee
Taiyo Yuden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiyo Yuden Co Ltd filed Critical Taiyo Yuden Co Ltd
Priority to JP1166995A priority Critical patent/JP2620884B2/en
Publication of JPH0334472A publication Critical patent/JPH0334472A/en
Application granted granted Critical
Publication of JP2620884B2 publication Critical patent/JP2620884B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To form an output terminal on the reverse surface of a substrate without increasing the cost of manufacture by a method wherein a flexible material is used as the substrate, a cut is made in the part of the substrate which is located in the vicinity of the output terminal or in the part of the substrate wherein the output terminal is formed, and the output terminal formed on the light-sensing surface side of the substrate is bent along said cut and turned onto the nonlight-sensing surface side of the substrate. CONSTITUTION:Upper electrodes 5 are formed on the top of an amorphous semiconductor layer 4 by ITO evaporation. For lower electrodes 3 and the upper electrodes 5, output terminals 6 disposed on the surface side of a substrate 1 are formed as usual. Moreover, a protecting layer 7 formed by printing resin having an excellent light-transmitting property, e.g. epoxy resin, is provided on the whole ot the uppermost surface except the part of the output terminal 6. The output terminal 6 is made to face the reverse surface 1a of the substrate 1 by forming a cut 8 longitudinally in the part of the substrate 1 being located in the vicinity of the output terminal and by bending the terminal onto the reverse surface 1a side of the substrate 1 along a bending line 9.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、非晶質半導体光起電力素子に関し、更に詳細
には、ステンレス、ポリイミド等の可撓性材料製の基板
を用いた非晶質半導体光起電力素子に関するものである
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an amorphous semiconductor photovoltaic device, and more particularly to an amorphous semiconductor photovoltaic device using a substrate made of a flexible material such as stainless steel or polyimide. The present invention relates to a semiconductor photovoltaic device.

(従来の技術) 近年、上記した種類のステンレス、ポリイミド等の基板
を用いた非晶質半導体光起電力素子が多く使用されてい
る。しかしながら、このような基板は不透明であるため
、素子本体およびその出力端子を基板の表面側に配置し
なければならないが、このように出力端子を基板の表面
側(受光面側となる)に配置した場合には、基板の裏面
側に配置される他の電気回路との接続に工夫が必要とな
る。このため、従来は、出力端子にハンダ等でリード線
を接続し、これを延長して上記他の電気回路に接続して
いた。
(Prior Art) In recent years, amorphous semiconductor photovoltaic elements using the above-mentioned types of substrates such as stainless steel and polyimide have been widely used. However, since such a board is opaque, the element body and its output terminal must be placed on the front side of the board. In this case, it will be necessary to devise a connection with other electric circuits arranged on the back side of the board. For this reason, conventionally, a lead wire was connected to the output terminal with solder or the like, and the lead wire was extended and connected to the other electric circuit.

しかしながら、このようにリード線をハンダ等で接続し
た場合は、このハンダの部分がかさばり時計、計算機等
の装置に組み込み難かった。
However, when the lead wires are connected with solder or the like in this manner, the solder portion is bulky and difficult to incorporate into devices such as watches and calculators.

そこで、特開昭61−134080号公報においては、
出力端子部分を突出構造とし、その突出部分を基板の裏
面側に折り曲げた構造が提案されている。
Therefore, in Japanese Patent Application Laid-open No. 61-134080,
A structure has been proposed in which the output terminal portion has a protruding structure and the protruding portion is bent toward the back side of the board.

(発明が解決しようとする課題) しかしながら、上記の特開昭61−134080号公報
において提案された構造においては、出力端子部分を突
出構造としたので、それを製造する際、2つの出力端子
の間の部分が無駄となり、非晶質半導体光起電力素子の
製造コストが上がる等の問題があった。
(Problem to be Solved by the Invention) However, in the structure proposed in the above-mentioned Japanese Unexamined Patent Publication No. 61-134080, the output terminal portion has a protruding structure. There was a problem that the part between them was wasted and the manufacturing cost of the amorphous semiconductor photovoltaic device increased.

そこで、本発明は、製造コストを上げることなく、基板
の裏面に出力端子が形成される非晶質半導体光起電力素
子を提供することを目的とするものである。
Therefore, an object of the present invention is to provide an amorphous semiconductor photovoltaic device in which an output terminal is formed on the back surface of a substrate without increasing manufacturing costs.

(課題を解決するための手段) 本発明の非晶質半導体光起電力素子は、可撓性材料を基
板として用い、該基板の受光面側に形成された出力端子
を、該出力端子近傍の基板に、あるいは出力端子が形成
された基板部分に該出力端子とともに、切り込みを入れ
、その切り込みに沿って折り曲げることにより、非受光
面側にまわしたことを特徴とするものである。
(Means for Solving the Problems) The amorphous semiconductor photovoltaic device of the present invention uses a flexible material as a substrate, and connects an output terminal formed on the light-receiving surface side of the substrate to a point near the output terminal. The device is characterized in that a notch is made in the substrate or in the part of the substrate where the output terminal is formed together with the output terminal, and the device is bent along the notch so as to turn toward the non-light receiving surface side.

(作 用) 本発明においては、従来から基板上に形成されている出
力端子自体を、該出力端子近傍の基板部分等に切り込み
を入れ、その切り込みに沿って折り曲げることにより、
非受光面側にまわして、出力端子を基板の裏面すなわち
非受光面側に形成するようにした。
(Function) In the present invention, the output terminal itself, which has conventionally been formed on a substrate, is made by making a cut in the substrate portion near the output terminal and bending it along the cut.
The output terminal was formed on the back side of the substrate, that is, on the non-light-receiving surface side.

(実施例) 以下、添付図面を参照しつつ、本発明の好ましい実施例
による非晶質半導体光起電力素子について説明する。
(Example) Hereinafter, an amorphous semiconductor photovoltaic device according to a preferred example of the present invention will be described with reference to the accompanying drawings.

第1図は、本発明の第1実施例による非晶質半導体光起
電力素子の平面図であり、第2図は、第1図の線A−A
に沿う断面図である。
FIG. 1 is a plan view of an amorphous semiconductor photovoltaic device according to a first embodiment of the present invention, and FIG.
FIG.

この図において、符号1はステンレス基板を示し、この
基板1は、その全面に絶縁膜2を有し、絶縁基板とされ
ている。この絶縁膜2は、例えばシリコーン系樹脂を印
刷して形成することができる。この基板1上には、下部
電極3が、例えばクロム蒸着により成膜されている。こ
の下部電極3の上には、プラズマCVD装置により非晶
質半導体層4が形成されている。この非晶質半導体層4
は、下から順に厚さ50から150入のP型層、厚さ4
000から600OAの■形層、および厚さ200から
300ÅのN型層を成膜してなるものである。
In this figure, reference numeral 1 indicates a stainless steel substrate, and this substrate 1 has an insulating film 2 on its entire surface and is an insulating substrate. This insulating film 2 can be formed by printing silicone resin, for example. A lower electrode 3 is formed on the substrate 1 by, for example, chromium vapor deposition. On this lower electrode 3, an amorphous semiconductor layer 4 is formed using a plasma CVD apparatus. This amorphous semiconductor layer 4
From the bottom, the P-type layer has a thickness of 50 to 150, and a thickness of 4.
A square layer of 000 to 600 OA and an N-type layer of 200 to 300 Å thick are formed.

上記非晶質半導体層4の上部には、上部電極5が、IT
O蒸着により形成されている。上記下部電極3および上
部電極5には、従来の通り、基板1の表面側に配置され
た出力端子6が形成されている。
Above the amorphous semiconductor layer 4, an upper electrode 5 is provided.
It is formed by O vapor deposition. The lower electrode 3 and the upper electrode 5 are provided with an output terminal 6 disposed on the front surface side of the substrate 1, as in the prior art.

更に、最上面全面に、上記出力端子6部分を除いて、透
光性の良い樹脂、例えばエポキシ系樹脂を印刷すること
によって形成された保護層7が設けられている。
Furthermore, a protective layer 7 is provided on the entire top surface, except for the output terminal 6 portion, which is formed by printing a resin with good translucency, such as an epoxy resin.

上記出力端子6は、例えば第3図に示すように、該出力
端子近傍の基板1部分に縦に切り込み8を形成し、折り
曲げ線9のところで、第4図(a)、(b)、(C)に
示した順で、基板1の裏面la側に折り曲げることによ
り、基板1の裏面1aに面するようにされる。
For example, as shown in FIG. 3, the output terminal 6 is formed by forming a vertical notch 8 in a portion of the substrate 1 near the output terminal, and forming a notch 8 at the bending line 9 in FIGS. 4(a), (b), ( By bending it toward the back surface la of the substrate 1 in the order shown in C), it is made to face the back surface 1a of the substrate 1.

なお、第5図に示すように、基板1および出力端子6に
横方向に切り込み8を入れ、折り曲げ線9のところで折
り曲げるようにしてもよい。
Incidentally, as shown in FIG. 5, cuts 8 may be made in the transverse direction in the substrate 1 and the output terminals 6, and the parts may be bent at a bending line 9.

この場合には、上記切り込み8は、図示したように出力
端子6の途中で終わらせる必要がある。
In this case, the cut 8 needs to end in the middle of the output terminal 6 as shown.

次に、第6図以降を参照して、本発明の第2の実施例に
よる丸型非晶質半導体光起電力素子について説明すると
、この実施例の場合には、第6図に示したように、基板
1の出力端子6の両側にそれぞれ切り込みlOを入れ、
折り曲げ線11のところで折り曲げることによって、出
力端子6は、基板1の裏面1aに面するようにされる。
Next, referring to FIG. 6 and subsequent figures, a round amorphous semiconductor photovoltaic device according to a second embodiment of the present invention will be explained. In the case of this embodiment, as shown in FIG. , make a cut lO on both sides of the output terminal 6 of the board 1, and
By bending at the bending line 11, the output terminal 6 is made to face the back surface 1a of the substrate 1.

このように、出力端子6が折り曲げられた状態の丸型非
晶質半導体光起電力素子の表面すなわち受光面側を第7
図に、また裏面すなわち非受光面側を第8図にそれぞれ
示した。
In this way, the surface of the round amorphous semiconductor photovoltaic element with the output terminal 6 bent, that is, the light-receiving surface side, is
8, and the back surface, that is, the non-light receiving surface side is shown in FIG.

この実施例においては、他の部分・部材は、上記第1実
施例と対応しているので、同一の符号を付してその説明
を省略する。
In this embodiment, other parts and members correspond to those in the first embodiment, so the same reference numerals are given to them and the explanation thereof will be omitted.

(発明の効果) 本発明においては、従来からステンレスやポリイミド等
の基板の受光面上に形成されている出力端子自体を、該
出力端子近傍の基板部分等に切り込みを入れ、その切り
込みに沿って折り曲げることにより、非受光面側にまわ
して、出力端子を基板の裏面すなわち非受光面側に形成
するようにしたので、特開昭61−134080号公報
に開示されているように突出端子を形成する場合に比べ
て、大幅に材料の節約をすることができ、従って、製造
コストも大きく低減することができる。
(Effects of the Invention) In the present invention, the output terminal itself, which has conventionally been formed on the light-receiving surface of a substrate made of stainless steel, polyimide, etc., is cut into a portion of the substrate near the output terminal, and then the output terminal itself is cut along the cut. By bending it, the output terminal is formed on the back side of the board, that is, on the non-light-receiving surface side by turning it to the non-light-receiving surface side, so that a protruding terminal is formed as disclosed in JP-A-61-134080. Compared to the case where the conventional method is used, it is possible to save a large amount of material, and therefore, the manufacturing cost can also be reduced significantly.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、本発明の第1実施例による非晶質半導体光起
電力素子の平面図、第2図は、第1図の線A−Aに沿う
断面図、第3図は、切り込みの入れ方の1例を示す出力
端子部の拡大図、第4図(a)、(11)、(C)は、
切り込みを入れられた出力端子部の折り曲げの手順を示
す側面図、第5図は、切り込みの入れ方の他の例を示す
出力端子部の拡大図、第6図は、本発明の第2実施例に
よる孔型非晶質半導体光起電力素子の平面図、第7図は
、出力端子を折り曲げた状態で示す第2実施例による孔
型非晶質半導体光起電力素子の概略平面図、第8図は、
出力端子を折り曲げた状態で示す第2実施例による孔型
非晶質半導体光起電力素子の概略背面図である。 1・・・基板      6・・・出力端子8、lO・
・・切り込み  9.1t・・・折り曲げ線杆 出 願 太陽誘電株式会社 理 北   村   欣   −(゛ 外3名
FIG. 1 is a plan view of an amorphous semiconductor photovoltaic device according to a first embodiment of the present invention, FIG. 2 is a sectional view taken along line A-A in FIG. 1, and FIG. Figures 4(a), (11), and (C) are enlarged views of the output terminal section showing one example of how to insert the terminal.
FIG. 5 is an enlarged view of the output terminal section showing another example of how to make the notches, and FIG. 6 is a side view showing the procedure for bending the output terminal section in which the notches are made. FIG. 7 is a plan view of a hole-type amorphous semiconductor photovoltaic device according to an example, and FIG. Figure 8 is
FIG. 3 is a schematic rear view of a hole-type amorphous semiconductor photovoltaic device according to a second embodiment, with the output terminal shown in a folded state. 1... Board 6... Output terminal 8, lO・
...Cut 9.1t...Bending wire rod application Taiyo Yuden Co., Ltd. Ri Kitamura Kin - (゛ and 3 other people)

Claims (1)

【特許請求の範囲】[Claims] 可撓性材料を基板として用い、該基板の受光面側に形成
された出力端子を、該出力端子近傍の基板に、あるいは
出力端子が形成された基板部分に該出力端子とともに、
切り込みを入れ、その切り込みに沿って折り曲げること
により、非受光面側にまわしたことを特徴とする非晶質
半導体光起電力素子。
A flexible material is used as a substrate, and an output terminal formed on the light-receiving surface side of the substrate is placed on the substrate near the output terminal, or together with the output terminal on a portion of the substrate where the output terminal is formed.
1. An amorphous semiconductor photovoltaic device characterized in that it is turned to a non-light-receiving surface side by making a notch and bending it along the notch.
JP1166995A 1989-06-30 1989-06-30 Amorphous semiconductor photovoltaic device Expired - Lifetime JP2620884B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1166995A JP2620884B2 (en) 1989-06-30 1989-06-30 Amorphous semiconductor photovoltaic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1166995A JP2620884B2 (en) 1989-06-30 1989-06-30 Amorphous semiconductor photovoltaic device

Publications (2)

Publication Number Publication Date
JPH0334472A true JPH0334472A (en) 1991-02-14
JP2620884B2 JP2620884B2 (en) 1997-06-18

Family

ID=15841432

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1166995A Expired - Lifetime JP2620884B2 (en) 1989-06-30 1989-06-30 Amorphous semiconductor photovoltaic device

Country Status (1)

Country Link
JP (1) JP2620884B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5512107A (en) * 1992-03-19 1996-04-30 Siemens Solar Gmbh Environmentally stable thin-film solar module
JP2001185747A (en) * 1999-12-24 2001-07-06 Nisshin Steel Co Ltd Insulation board superior in heat resistance for solar cells and its manufacturing method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60123073A (en) * 1983-12-08 1985-07-01 Fuji Electric Corp Res & Dev Ltd thin film solar cells
JPS61134080A (en) * 1984-12-04 1986-06-21 Matsushita Electric Ind Co Ltd Thin film solar cell

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60123073A (en) * 1983-12-08 1985-07-01 Fuji Electric Corp Res & Dev Ltd thin film solar cells
JPS61134080A (en) * 1984-12-04 1986-06-21 Matsushita Electric Ind Co Ltd Thin film solar cell

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5512107A (en) * 1992-03-19 1996-04-30 Siemens Solar Gmbh Environmentally stable thin-film solar module
JP2001185747A (en) * 1999-12-24 2001-07-06 Nisshin Steel Co Ltd Insulation board superior in heat resistance for solar cells and its manufacturing method

Also Published As

Publication number Publication date
JP2620884B2 (en) 1997-06-18

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