JPH03285325A - Film forming device using laser annealing process - Google Patents
Film forming device using laser annealing processInfo
- Publication number
- JPH03285325A JPH03285325A JP8626490A JP8626490A JPH03285325A JP H03285325 A JPH03285325 A JP H03285325A JP 8626490 A JP8626490 A JP 8626490A JP 8626490 A JP8626490 A JP 8626490A JP H03285325 A JPH03285325 A JP H03285325A
- Authority
- JP
- Japan
- Prior art keywords
- window
- optical window
- workpiece
- laser
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000005224 laser annealing Methods 0.000 title claims description 25
- 230000003287 optical effect Effects 0.000 claims abstract description 49
- 230000001678 irradiating effect Effects 0.000 claims abstract description 6
- 230000015572 biosynthetic process Effects 0.000 abstract description 19
- 208000002352 blister Diseases 0.000 abstract 1
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 31
- 239000000758 substrate Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 238000005339 levitation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分!1If)
本発明はレーザアニール法を用いた成膜′!A1ν1“
に関する。[Detailed Description of the Invention] (Industrial Application! 1If) The present invention uses a laser annealing method to form a film! A1ν1"
Regarding.
(従来の技術)
レーザアニール技術はシリコンウェハの加工処理や液晶
デイスプレィでの1’F’r (1’、h in Fi
1m ’I’rans 1stor)製造などに利用
されてしする。(Conventional technology) Laser annealing technology is used for processing silicon wafers and for liquid crystal displays.
1m 'I'rans 1stor) It is used for manufacturing etc.
このレーザアニールは被加工体にレーザ光を照射するこ
とによって被加工体表面に熟エネルギーを付!jし、こ
れによって被加工体表面の結晶化や物性の安定化を図る
もので、薄膜プロセスにおいて成膜と同時に利用するこ
とによって所定の成膜条件を達成する際などにも利用さ
れる。This laser annealing applies energy to the surface of the workpiece by irradiating the workpiece with laser light! However, this is used to stabilize the crystallization and physical properties of the surface of the workpiece, and is also used to achieve predetermined film formation conditions by using it simultaneously with film formation in a thin film process.
薄膜プロセスによる成膜は従来、チャンバ内に基板をセ
ラ1−シ、ガスCVI)法、スパッタリング法等によっ
てなされている。この場合、レーザアニールをかけなが
ら成膜する場合はチャンバに光学窓を設置し、光学窓を
とおしてレーザ光を照射しながら行うから、成膜する際
に光学窓に汚れが付着することが避けられないという問
題がある。Film formation using a thin film process has conventionally been performed by placing a substrate in a chamber, using a gas CVI method, a sputtering method, or the like. In this case, when forming a film while applying laser annealing, an optical window is installed in the chamber, and the process is performed while irradiating the laser beam through the optical window, which prevents dirt from adhering to the optical window during film formation. The problem is that it cannot be done.
このため従来のレーザアニールを用いた成膜装置では、
光学窓に汚れ防止用のシャッタを設け、成膜時にはシャ
ッタを閉め、成膜後にシャッタを開けてレーザアニール
をかけるか、あるいは同時にレーザアニールをかけざる
を得ない場合には、光学窓が汚れた際に交換して使用し
ている。For this reason, with conventional film deposition equipment that uses laser annealing,
Install a shutter on the optical window to prevent dirt, close the shutter during film formation, open the shutter after film formation, and apply laser annealing, or if laser annealing cannot be performed at the same time, prevent the optical window from becoming dirty. I use it interchangeably.
(発明が解決しようとする課題)
」1記のように窓シャッタを用いずにレーザアニールと
同時に成1漠する場合は、使用とともに窓が汚れてくる
ため、適宜光学窓を交換しなければならず、光学窓が高
価であるためそのための費用がかさむこと、また使用中
に光学窓の光透過条件が変化してくるためレーザアニー
ル条件が変動してくるといった問題点があった。(Problems to be Solved by the Invention) If the window shutter is not used and laser annealing is unsuccessful as described in item 1, the optical window will become dirty as it is used, so the optical window must be replaced as appropriate. First, there are problems in that the optical window is expensive, which increases costs, and that the laser annealing conditions change because the light transmission conditions of the optical window change during use.
そこで、本発明は上記問題点を解消すべくなされたもの
であり、その目的とするところは、光学窓を汚すことな
く容易にレーザアニールと同時に成膜処理を施すことが
できる、レーザアニール法を用いた成膜装置を堤供しよ
うとするものである。Therefore, the present invention has been made to solve the above-mentioned problems, and its purpose is to provide a laser annealing method that allows film formation to be easily performed at the same time as laser annealing without contaminating the optical window. The purpose is to provide the film-forming equipment used.
(i!!1題を解決するための手段)
本発明は上記[1的を達成するため次の構成をそなえる
。(Means for solving problem i!!1) The present invention has the following configuration in order to achieve object 1 above.
すなわち、光学窓を備えたチャンバ内に被加工体をセラ
1−シ、チャンバ内において膜形成すると同時に前記光
学窓をとおして被加工体にレーザ光を照射して成!摸処
理を施すレーザアニール法を用いた成膜装置において、
前記チャンバ内で前記光学窓に而して、リング状に形成
した複数枚の遮蔽羽根を各遮蔽羽根間に所定間隔をあけ
て山形に!Rね合わせた窓シャッタを設け、前記チャン
バ内に被加工体を支持するX−Yステージを設置すると
ともに前記光学窓に垂直にレーザ光を入射させる光学系
を設け、レーザ光を前記窓シャッタの開III部を通過
させて被加工体に照射するとともにX−Yステージを移
動制御して、被加工体上でレーザ光を走査するコントロ
ール部を設けたことを特徴とする。That is, a workpiece is placed in a chamber equipped with an optical window, a film is formed in the chamber, and at the same time, a laser beam is irradiated onto the workpiece through the optical window. In a film deposition system using a laser annealing method that performs a simulated process,
Inside the chamber, a plurality of shielding blades formed in a ring shape are arranged in a chevron shape with a predetermined interval between each shielding blade around the optical window! An X-Y stage for supporting a workpiece is installed in the chamber, and an optical system is provided to enter a laser beam perpendicularly into the optical window. The laser beam is characterized by being provided with a control unit that allows the laser beam to pass through the open III section and irradiate the workpiece, and controls the movement of the X-Y stage to scan the laser beam on the workpiece.
(作用)
レーザ光は光学窓に対して垂直に入射し、窓シャッタの
開口部を通過して被加工体に照射される。(Function) Laser light enters the optical window perpendicularly, passes through the opening of the window shutter, and is irradiated onto the workpiece.
X−Yステージを駆動することにより被加工体を移動さ
せてレーザ光を被加工体」二で走査する。窓シャッタは
相互に隙間をあけて重ね合わせた遮蔽羽根によって成膜
時に飛散するガス分子を散乱してレーザアニール時に光
学窓をガス分子の付着による汚れから保詭する。By driving the X-Y stage, the workpiece is moved and the laser beam is scanned over the workpiece. The window shutter protects the optical window from contamination due to adhesion of gas molecules during laser annealing by scattering gas molecules scattered during film formation using shielding blades overlapped with a gap between them.
(実施例)
以下本発明のりf適な実施例を添付図面に基づいて詳細
に説明する。(Embodiments) Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
第1図は、本発明に係るレーザアニール法を用いた成1
戻装置の一実施例を示すブロック図である。FIG. 1 shows the first stage of the process using the laser annealing method according to the present invention.
FIG. 2 is a block diagram showing one embodiment of a return device.
同図で10は被加工体を収容するチャンバ、12はチャ
ンバ10内に設置したX−Yステージ、13は被加工体
14を支持するためのチャック部である。J6はX−Y
ステージ12を駆動する1駆動部、18は駆動部16を
制御するコン1ヘローラである。In the figure, 10 is a chamber for accommodating a workpiece, 12 is an X-Y stage installed in the chamber 10, and 13 is a chuck portion for supporting a workpiece 14. J6 is X-Y
A driver 1 drives the stage 12, and a controller 18 controls the driver 16.
X−Yステージ12は磁気浮」1方式によって支持され
ており、コンl−ローラ18によってパルス制御される
。なお、被加工体である基板等を予備加熱するためチャ
ック部1;3にヒータが設けられる。The X-Y stage 12 is supported by magnetic levitation and is pulse-controlled by controller rollers 18. Note that a heater is provided in the chuck portions 1 and 3 to preheat the substrate or the like that is the workpiece.
15は予備加熱用の加熱部である。15 is a heating section for preheating.
チャンバ10の1汁気系はロータリポンプ20、ターボ
分子ポンプ22.コンダクタンスバルブ24、開閉バル
ブ28、リークバルブ:30からなる。The first fluid system of the chamber 10 includes a rotary pump 20, a turbo molecular pump 22. It consists of a conductance valve 24, an opening/closing valve 28, and a leak valve 30.
コンダクタンスバルブ2/1はλ°1;空、!l 3
]に連動してサーボ制御されろ。Conductance valve 2/1 is λ°1; empty! l 3
] and be servo controlled.
;32は被加】皿体I4の表面をあらかじめ清浄化する
ために被加に1体1/を収容して工゛(空にひくための
子側を真空!sす、;34は波力りに体4閑送するため
の搬送ユニツ1−である。; 32 is a workpiece] In order to clean the surface of the dish body I4 in advance, a workpiece 1/1 is housed in the workpiece and processed (vacuum the child side to draw it into the sky); 34 is a wave force This is a transport unit 1- for transporting a body 4.
また、チャンバ10には成膜用に複数のガスライン40
が接続される。42はガスのフローメータ、44はガス
流」I(を調節するためのマスフローコン1−ローラで
ある。The chamber 10 also includes a plurality of gas lines 40 for film formation.
is connected. 42 is a gas flow meter, and 44 is a mass flow controller 1-roller for adjusting the gas flow.
なお、チャンバ10内の成膜用のセット配置はCVD法
、プラズマ(:Vl) rr、笠に応じて適宜ル゛S周
波電極等を配置するものとする。Note that the set arrangement for film formation in the chamber 10 is such that a S frequency electrode and the like are appropriately arranged according to the CVD method, plasma (:Vl) rr, and shade.
レーザ光はチャンバ10の上部に設けた光学窓50を介
してチャンバ10内の被加工体14に照射される。The laser beam is irradiated onto the workpiece 14 inside the chamber 10 through an optical window 50 provided at the top of the chamber 10 .
52は連続発振のArレーザ、54はArレーザへのパ
ワー供給部、56はレーザ光を光学窓50に垂直に入射
させ被加工体14に集光させるための光学系、58はレ
ーザ光強度をモニターするパワーメータ、60は信号の
処理系である。62はレーザ光の光路内においたハーフ
ミラ−である。52 is a continuous wave Ar laser; 54 is a power supply unit for the Ar laser; 56 is an optical system for making the laser beam enter the optical window 50 perpendicularly and focusing it on the workpiece 14; and 58 is an optical system for adjusting the laser beam intensity. A power meter 60 for monitoring is a signal processing system. 62 is a half mirror placed in the optical path of the laser beam.
これら光学系によってArレーザ52から放射されたレ
ーザ光は図のように光学窓50に対して垂直に入射する
。Laser light emitted from the Ar laser 52 by these optical systems enters the optical window 50 perpendicularly as shown in the figure.
ここで、70はチャンバ10内で光学窓50を成膜時の
ガス分子の付着から保護するために設けた窓シャッタで
ある。窓シャッタ70はリング状に形成した遮蔽羽根を
光学窓50に而して重ね合わせるようにして取り付けて
形成したものである。Here, 70 is a window shutter provided in the chamber 10 to protect the optical window 50 from adhesion of gas molecules during film formation. The window shutter 70 is formed by attaching ring-shaped shielding blades to the optical window 50 so as to overlap them.
第2図に窓シャッタ70を拡大した断面図を示す、窓シ
ャッタ70は銘リング状に形成した複数枚の遮蔽羽根7
2を光学窓50の中心と同心に。FIG. 2 shows an enlarged sectional view of the window shutter 70. The window shutter 70 has a plurality of shielding blades 7 formed in a ring shape.
2 concentrically with the center of the optical window 50.
上下間に隙間をあけて山形に重ね合わせたものである。They are stacked in a chevron shape with a gap between the top and bottom.
遮蔽羽根72はチャンバ10への取り付は側が大径で先
細へ徐々に小径のものを用いる。レーザ光は遮蔽羽根7
2の中心位置を通過させるもので、最下端に設ける遮蔽
羽根72aの中心にはレーザ光ビームを通過させる小径
サイズで開I」部72bを透設する6
上下に隣接する遮蔽羽根72は図のように遮蔽体部分で
重なり部分をもたせてスタット74を用いて固定する。The shielding blade 72 is attached to the chamber 10 by using a blade having a large diameter on one side and gradually decreasing in diameter as it tapers. The laser beam is shielded by the shielding blade 7.
6. The shielding blade 72a provided at the lowest end has an open I" portion 72b with a small diameter at the center of the shielding blade 72a provided at the lowermost end. 6 The vertically adjacent shielding blades 72 are as shown in the figure. As shown, the shield portions are overlapped and fixed using the studs 74.
第3図は窓シャッタ70を下面側から見た図である。図
のように窓シャッタ7oを下面から見た場合は、レーザ
光の通過部分を除いて光学窓は完全に遮蔽される。FIG. 3 is a view of the window shutter 70 viewed from the bottom side. When the window shutter 7o is viewed from below as shown in the figure, the optical window is completely shielded except for the portion through which the laser beam passes.
なお、遮蔽羽根72間に隙間を設けているのはチャンバ
10内を一定の高真空に保つため、窓シャッタ70内も
真空にひけるようにするためである。したがって、遮蔽
羽根72は窓シャッタ70内部が真空にひきやすく、か
つ成膜時にガス分子が窓シャッタ70内に飛び込まない
ようにする必要がある。実施例では、被加工体側から光
学窓50側に向けて飛ぶガス分子を外向きに散乱するよ
うに遮蔽体部分を斜めにしてセットしている。この遮蔽
羽根72の遮蔽体部分の幅および遮蔽体部分の重なり幅
、遮蔽羽根72相互の間隔等はガス分子の散乱方向をコ
ンピュータH1算し、光学窓50の少なくともレーザ光
が通過する近傍範囲内にはガス分子が飛び込まないよう
に設計することができる。Note that the reason for providing a gap between the shielding blades 72 is to maintain a constant high vacuum inside the chamber 10 so that the inside of the window shutter 70 is also exposed to the vacuum. Therefore, it is necessary for the shielding blade 72 to easily create a vacuum inside the window shutter 70 and to prevent gas molecules from jumping into the window shutter 70 during film formation. In the embodiment, the shield portion is set obliquely so that gas molecules flying from the object to be processed toward the optical window 50 are scattered outward. The width of the shielding part of the shielding blade 72, the overlap width of the shielding part, the interval between the shielding blades 72, etc. are determined by calculating the scattering direction of gas molecules by computer H1, and at least within the vicinity of the optical window 50 through which the laser beam passes. can be designed to prevent gas molecules from entering.
遮蔽羽根72.1の中央に設けた開「1部72F)部は
成膜時にレーザ光が通過するからレーザ光によってガス
分子・が散乱され、開[1部72t)からガス分子が飛
び込むことが防止される。During film formation, the laser beam passes through the open part 72F) provided at the center of the shielding blade 72.1, so the gas molecules are scattered by the laser light, and the gas molecules do not jump in from the opening [1 part 72T). Prevented.
なお、プラズマCVD法等のようにチャンバ10内に高
周波電極等の電極を持ち込んで行う成膜方V;の場合は
、窓シャッタ70をグラウンド電位に落として窓シャッ
タ70側にガス分子が飛散しないようにし、光学窓50
へのガス分子の飛び込みを防止する。また、遮蔽羽根7
2に衝突したガス分子を遮蔽羽根72でトラップするた
め遮蔽羽根72を冷却する。これによってガス分子の窓
シャッタ70内への飛び込みをさらに効果的に抑えるこ
とができる。In addition, in the case of film forming method V, which is performed by bringing an electrode such as a high-frequency electrode into the chamber 10, such as plasma CVD method, the window shutter 70 is lowered to the ground potential to prevent gas molecules from scattering to the window shutter 70 side. so that the optical window 50
Prevent gas molecules from entering. In addition, the shielding blade 7
The shielding blades 72 are cooled in order to trap the gas molecules colliding with the shielding blades 72. This makes it possible to more effectively suppress gas molecules from entering the window shutter 70.
上記実施例の成膜装置を用いてレーザアニール法によっ
て成膜する場合は、基板等の被加工体14をX−Yステ
ージ12」−にセン1〜した後、ガスライン40からガ
スを導入して膜形成するとともに、レーザ光を光学窓5
0から窓シャッタ70の中心の開1」部をとおして被加
工体14に照射して行う。When forming a film by the laser annealing method using the film forming apparatus of the above embodiment, after placing the workpiece 14 such as a substrate on the X-Y stage 12'', gas is introduced from the gas line 40. At the same time, the laser beam is passed through the optical window 5.
This is done by irradiating the workpiece 14 from 0 through the opening 1'' in the center of the window shutter 70.
本実施例の場合は、被加工体14をX−Yステージ12
」二に支持して被加工体14を移動させるようにしてい
るから、レーザ光の照射位置を一定にして被加]皿体1
/lを移動させることにより被加工体14上の任意位置
にレーザ光を照射させて膜形成を制御しながら成膜させ
ることができる。光学窓50は窓シャッタ70によって
完全に保護されているから窓が汚れる心配がなく、した
がってレーザ光の透過率が変動したりすることもなって
高精度のレーザアニールによる成膜処理を施すことがで
きる。In the case of this embodiment, the workpiece 14 is moved to the X-Y stage 12.
Since the object 14 to be processed is moved by supporting it on the second side, the irradiation position of the laser beam is kept constant and the object 14 to be processed is moved.
By moving /l, the laser beam can be irradiated onto any position on the workpiece 14 to form a film while controlling the film formation. Since the optical window 50 is completely protected by the window shutter 70, there is no need to worry about the window becoming dirty.Therefore, since the transmittance of the laser beam may fluctuate, it is possible to perform a film forming process using highly accurate laser annealing. can.
なお、」1記成膜装置ではレーザ光強度が変動した場合
の補償として、レーザ光強度をパワーメータ58で常時
監視し、レーザ光強度が下がった場合にはX−Yステー
ジ12の移動速度を下げ、レーザ光強度が上昇した場合
にはX−Yステージ12の移動速度を上げるようにX−
Yステージ12を速度コントロールするコントロール部
を付設している。In addition, in the film forming apparatus described in 1., the laser light intensity is constantly monitored by the power meter 58 to compensate for fluctuations in the laser light intensity, and if the laser light intensity decreases, the moving speed of the X-Y stage 12 is adjusted. If the laser beam intensity increases, the X-Y stage 12 is moved at a higher speed.
A control section for controlling the speed of the Y stage 12 is attached.
レーザ光強度はArレーザ52等の光源部が使用ととも
に劣化してレーザ光強度が下がったり、他の原因によっ
てゆらぐ場合がある。このような場合にX−Yステージ
12の移動速度を変えて補償する方法はレーザ光強度の
変動にすばやく追随することができる点できわめて有効
である。The intensity of the laser beam may decrease due to the deterioration of the light source section such as the Ar laser 52 with use, or may fluctuate due to other causes. In such a case, a method of compensating by changing the moving speed of the X-Y stage 12 is extremely effective in that it can quickly follow fluctuations in laser light intensity.
また、このようにX−Yステージ12に被加工体14を
支持してレーザアニールさせる方法によれば、従来方法
ではレーザ光源系を振らしてレーザ光を走査していたも
のとくらべ、レーザ光源系を定置させておくことができ
光源系の構成が単純化できること、またレーザ光が一定
位置から入射することにより上記のように窓シャッタを
固定して設けることができ、光学窓の汚れ防止ができる
点できわめて有効である。Furthermore, according to the method of supporting the workpiece 14 on the X-Y stage 12 and performing laser annealing, the laser light source is The structure of the light source system can be simplified by keeping the system stationary, and since the laser beam enters from a fixed position, the window shutter can be fixed as described above, which prevents the optical window from becoming dirty. It is extremely effective in that it can be done.
なお、上記例においては、スポットビーム状のレーザ光
を用いているが、数十cm程度以上もの大形の被加工体
を対象とする場合はラインビー11を用いて成膜するこ
とも可能である。この場合は、遮蔽羽根を長円形に形成
し、レーザ光が通過する部分を細長のスリット状にする
ことによって上記例と同様な効果を発揮させることがで
きる。Note that in the above example, a spot beam laser beam is used, but if the target is a large workpiece of several tens of centimeters or more, it is also possible to form a film using the Linebee 11. be. In this case, the same effect as in the above example can be achieved by forming the shielding blade into an oval shape and making the portion through which the laser beam passes into an elongated slit shape.
また、上記例はレーザアニールを用いた成膜装置につい
て説明したが前記窓シャッタの構造はレーザアニール装
置に限らず、光学窓を有するチャンバの構造として一般
的に利用することが可能である。Further, although the above example describes a film forming apparatus using laser annealing, the structure of the window shutter is not limited to a laser annealing apparatus, but can be generally used as a structure of a chamber having an optical window.
以上、本発明について好適な実施例を挙げて種々説明し
たが、本発明はこの実施例に限定されるものではなく、
発明の精神を逸脱しない範囲内で多くの改変を施し得る
のはもちろんのことである。The present invention has been variously explained above using preferred embodiments, but the present invention is not limited to these embodiments.
Of course, many modifications can be made without departing from the spirit of the invention.
(発明の効果)
本発明に係るレーザアニールを用いた成膜装置によれば
、レーザアニールと同時に膜形成をする場合も光学窓が
効果的に遮蔽され、光学窓の汚れが防止でき、光学窓を
交換したりする必要がなくなり、またレーザ光が常に一
定条件で照射されてより精度のよい成膜処理を施すこと
が可能になる等の著効を奏する。(Effects of the Invention) According to the film forming apparatus using laser annealing according to the present invention, even when film formation is performed simultaneously with laser annealing, the optical window can be effectively shielded, dirt on the optical window can be prevented, and the optical window can be prevented from becoming dirty. There is no need to replace the laser beam, and the laser beam is always irradiated under constant conditions, making it possible to perform film formation with higher precision.
第1図は本発明に係るレーザアニールを用いた成膜装置
の一実施例を示すブロック図、第2図は窓シャッタの断
面図、第3図は窓シャッタの底面図である。
10・・・チャンバ、 12・・・χ−Yステージ、
14・・・被加工体、 20・・・ロータリポン
プ、 22・・・ターボ分子ポンプ、 32・・・
予備真空槽、 34・・・搬送ユニット、40・・・ガ
スライン、50・・・光学窓、52・・・Arレーザ、
54・・・パワー供給部、56・・・光学系、 58・
・・パワーメータ、70・・・窓シャッタ、 72.
72a・・・遮蔽羽根、 72b・・・開口部、 74
・・・スタット。
第 1
1・′
137一FIG. 1 is a block diagram showing an embodiment of a film forming apparatus using laser annealing according to the present invention, FIG. 2 is a sectional view of a window shutter, and FIG. 3 is a bottom view of the window shutter. 10...Chamber, 12...χ-Y stage,
14... Workpiece, 20... Rotary pump, 22... Turbomolecular pump, 32...
Preparatory vacuum chamber, 34...Transportation unit, 40...Gas line, 50...Optical window, 52...Ar laser,
54... Power supply section, 56... Optical system, 58.
...Power meter, 70...Window shutter, 72.
72a... Shielding blade, 72b... Opening, 74
...Stat. 1st 1・' 1371
Claims (1)
チャンバ内において膜形成すると同時に前記光学窓をと
おして被加工体にレーザ光を照射して成膜処理を施すレ
ーザアニール法を用いた成膜装置において、 前記チャンバ内で前記光学窓に面して、リ ング状に形成した複数枚の遮蔽羽根を各遮蔽羽根間に所
定間隔をあけて山形に重ね合わせた窓シャッタを設け、 前記チャンバ内に被加工体を支持するX−Yステージを
設置するとともに前記光学窓に垂直にレーザ光を入射さ
せる光学系を設け、 レーザ光を前記窓シャッタの開口部を通過 させて被加工体に照射するとともにX−Yステージを移
動制御して被加工体上でレーザ光を走査するコントロー
ル部を設けたこと を特徴とするレーザアニール法を用いた成膜装置。[Claims] 1. A workpiece is set in a chamber equipped with an optical window,
In a film forming apparatus using a laser annealing method in which a film is formed in a chamber and a film is formed by irradiating a workpiece with laser light through the optical window at the same time, a film is formed in the chamber facing the optical window. A window shutter is provided in which a plurality of ring-shaped shielding blades are stacked in a chevron shape with a predetermined interval between each shielding blade, and an X-Y stage that supports a workpiece is installed in the chamber. An optical system is provided to make a laser beam enter the optical window perpendicularly, and the laser beam passes through the opening of the window shutter and irradiates the workpiece, and an X-Y stage is controlled to move on the workpiece. A film forming apparatus using a laser annealing method characterized by being provided with a control section that scans laser light.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8626490A JPH03285325A (en) | 1990-03-31 | 1990-03-31 | Film forming device using laser annealing process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8626490A JPH03285325A (en) | 1990-03-31 | 1990-03-31 | Film forming device using laser annealing process |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03285325A true JPH03285325A (en) | 1991-12-16 |
Family
ID=13881963
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8626490A Pending JPH03285325A (en) | 1990-03-31 | 1990-03-31 | Film forming device using laser annealing process |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03285325A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7169657B2 (en) | 1992-03-26 | 2007-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Process for laser processing and apparatus for use in the same |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5842770A (en) * | 1981-09-09 | 1983-03-12 | Tohoku Richo Kk | Device for blocking vapor flow from evaporating source |
JPH01316463A (en) * | 1988-06-17 | 1989-12-21 | Nec Corp | Device for forming thin film by laser irradiation |
-
1990
- 1990-03-31 JP JP8626490A patent/JPH03285325A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5842770A (en) * | 1981-09-09 | 1983-03-12 | Tohoku Richo Kk | Device for blocking vapor flow from evaporating source |
JPH01316463A (en) * | 1988-06-17 | 1989-12-21 | Nec Corp | Device for forming thin film by laser irradiation |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7169657B2 (en) | 1992-03-26 | 2007-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Process for laser processing and apparatus for use in the same |
US7781271B2 (en) | 1992-03-26 | 2010-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Process for laser processing and apparatus for use in the same |
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