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JPH03273653A - 樹脂被覆ボンディング細線 - Google Patents

樹脂被覆ボンディング細線

Info

Publication number
JPH03273653A
JPH03273653A JP2074151A JP7415190A JPH03273653A JP H03273653 A JPH03273653 A JP H03273653A JP 2074151 A JP2074151 A JP 2074151A JP 7415190 A JP7415190 A JP 7415190A JP H03273653 A JPH03273653 A JP H03273653A
Authority
JP
Japan
Prior art keywords
bonding
wire
thin
resin
coated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2074151A
Other languages
English (en)
Other versions
JPH0671022B2 (ja
Inventor
Kohei Tatsumi
宏平 巽
Hiroyuki Kondo
裕之 近藤
Ryoichi Suzuki
良一 鈴木
Toru Bando
徹 板東
Soichi Kadoguchi
門口　壮一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Japan Ltd
Nippon Steel Corp
Original Assignee
Texas Instruments Japan Ltd
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Japan Ltd, Nippon Steel Corp filed Critical Texas Instruments Japan Ltd
Priority to JP2074151A priority Critical patent/JPH0671022B2/ja
Publication of JPH03273653A publication Critical patent/JPH03273653A/ja
Priority to US07/939,966 priority patent/US5415922A/en
Publication of JPH0671022B2 publication Critical patent/JPH0671022B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
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    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
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    • H01L2224/45015—Cross-sectional shape being circular
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/481—Disposition
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    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は、表面に絶縁膜を被覆した半導体用ボンディン
グ細線に関するものである。
（従来の技術） ボンディング細線は、キャピラリーから引出された先端
を加熱して形成する溶融状態のボールを、半導体素子上
に圧着して第１ボンディング部をつくり、その後キャピ
ラリーの移動で所定のループを形成しながらリード表面
に導かれ、ステッチボンディング（第２ボンデイング）
される。
ボンディング細線は、通常２０〜５ｏｕｎ径の裸金線が
広く使用されているが、ときどき第１．第２ボンド間の
ループがゆるみ、半導体素子に細線が接触し、ショート
を起すことがある。特に近年大規模集積回路の発展に伴
い、また素子自体の小型化と相俟って高密度多ピン接合
構造にす＼んでいる。このような高密度多ピン接合には
、細線の接合スパンを長尺にしたり、より細径の細線を
使用する方向となり、このことはループのたるみゃカー
ル現象による隣接細線同志の接触を起しゃすくする。
上記したような高密度細線対策、すなわちボンディング
細線同志の接触あるいは半導体素子との接触によるショ
ートを防止するために、表面に絶縁皮膜を被覆したボン
ディング細線が例えば特開昭５８−３２３９号公報、同
５９−１５４０５４号公報等ニ逗案されている。
（発明が解決しようとする課題） 絶縁被覆をしたボンディング細線は、接触にょるショー
ト防止には、それなりの効果はみられるが、従来一般に
使用されている金線に被覆された絶縁被覆ボンディング
細線では、ボンディングのループの形状が安定せず、信
頼性に問題があった。
また接合性についても特に第２ボンド部の接合強度が被
覆のない金線と比較して低く、連続して接合できず中断
することも問題であった。
本発明は、このような問題点を解決するものであって、
ボンディング工程中のループ形状を安定にすると共に、
接合性を向上させた樹脂被覆ボンディング細線を提供す
ることにある。
（課題を解決するための手段） 本発明者らは細線の高速ボンディング中における高速ビ
デオの撮影、および被覆材の剥離傷の走査形電子顕微鏡
による観察結果から、ループ形状に異常が発生する原因
は、樹脂を被覆したボンディング細線は、従来の被覆し
ていない金線と比較して、キャピラリー内部での摺動時
に摩擦が大きいため、キャピラリー先端から送り出され
たり、戻されたりする際に安定性を欠くためであること
がわかった。
すなわちボンディング細線とキャピラリーの摺動性を改
善するには、キャピラリーの内面の粗度を下げることも
効果がある一つの方法であるが、これは非常に微細な部
分である上、セラミックスという材質上の制約もあり、
改善に限界がある。
そこでキャピラリーの移動に際しボンディング細線がキ
ャピラリー内部で接触する状態を変化させることにより
上記の問題点の改善を試みた。つまり、金線の強度、延
性特性を変化させること、特に金線の延性を小さくする
ことが極めて有効であることを確認した。
本発明は、このような知見にもとずいて完成したもので
あって、その要旨とするところは、金細線の表面に高分
子材料の絶縁膜を被覆した半導体用ボンディング細線に
おいて、引張り試験により破断させたときの細線の伸び
を０．５％以上３．５％以下にすることにある。
以下本発明の詳細な説明する。
一般に金線は、溶解工程で目的とする性質を得るために
微量元素をドーピングし、その後伸線−熱処理の工程を
経て製造されるが、通常２０〜５０ｕｍの線径のもので
、引張り試験における破断までの伸びが４〜ｌＯ％程度
に調整されたものが使用されている。この伸びは、最終
的には熱処理によって調整された値であるが、ボンディ
ングしたときの接合強度やルーピング特性等から経験的
に決めたものである。
しかしながら、樹脂を被覆したボンディング細線におい
ては従来の伸び値を有する細線では、接合性がよくない
。特に第２ボンディング部において接合不良を起す頻度
が多くなる。またループのずれ発生がみられるようにな
り、安定性についての問題があった。すなわち、二層構
造となっている細線のループ形成や第２ボンディング時
の圧着による樹脂剥離が細線材質と相関するとの前提で
、種々実験の結果、引張り試験における破断までの伸び
を、裸線線が通常有している値よりも低く抑えることに
より、ルーピング特性がよく、かつ前記接合性が改善さ
れることがわかった。
本発明が、引張り試験における破断までの伸びを０．５
〜３．５％とした理由はこのような観点からである。こ
のように樹脂被覆ボンディング細線の伸びを３．５％以
下にすることにより、第２ボンドの圧着時に、より容易
に樹脂被覆層が破れて金線とリード表面の金属との接合
が可能となり、接合性の顕著な改善がみられる。伸びが
４％以上ではルーピング性、接合性において伸びの影響
は顕著にはならない。また、０．５％未満では、伸線時
の金線内の残留歪みにより、細線に曲がりなどのくせが
残り使用上好ましくない。上記伸びの最も好ましい範囲
は１〜３％である。尚、本発明において、伸びを上記範
囲にするには例えば、伸線後の焼鈍温度あるいは時間を
調整することによって可能である。
（実　施　例） 線径ははり３０ρφ、純度９９．９９％の金線に、０．
８−厚の樹脂（ボリアリレート）被覆をし、第１表に示
す各種の伸び値（引張り試験における破断までの伸び％
）を有する金線に接合試験およびルーピング特性の判定
を行った。
第１ボンデイングをポールボンディング、第２ボンデイ
ングをステッチボンディングとしてルーピング特性につ
いては、ポールボンディング後の金線ループ形状のばら
つきから判定した。すなわち、第１図Ａ（樹脂被覆金線
の側面ループ形状）および同図Ｂ（同金線の上面ループ
形状）に示すように、ループスパン（第１ボンド−第２
ボンド間距離）の第１ボンド側ｌ／４、中央、第２ボン
ド側１／４の各位置において、平均ループ形状（実線）
と、ずれループ形状（破線）の高さのずれ（Δｈ、〜△
ｈｉ）および横方向のずれ（ΔＸ１〜ΔＸ３）を測定し
、１００ピンのうち１００−以上のばらつき（ずれ）が
何れかに１本以上あるときを×印とした。
また接合性については連続してボンディングできたピン
数がｅ、ｏｏｏ以上のものを０．１００以上ｅ以上ｏｏ
未洟のものをΔ、１００未満のものをＸとした。接合強
度は、樹脂被覆した金線と、被覆しむい裸の金線とをそ
れぞれプルテストし、これによる強度の平均値のｆ　（
ｇ）／　ｔ。（ｆ：被覆線、ｆ、：無被覆線）として表
わしている。
測定結果を第１表に示す。この表には比較のために樹脂
被覆されていない金線についても併記した。なお第１表
に示されるすべての場合に第１ボンドの不良はなく、ま
たプルテストの結果も第１ボンド部で破断するものはな
かった。
尚、第１および第２ボンディング間（スパン距離）は３
ｍｍとした。
上記表から明らかなように、本発明範囲の伸び０．５〜
３．５％を有する被覆ボンディング細線は、何れもよい
結果を示している。
（発明の効果） 以上説明したように、樹脂被覆ボンディング細線の伸び
を０．５〜３．５％の範囲にすることにより、ルーピン
グ特性および接合性共にすぐれており、歩留りの高い、
しかも信頼性のある半導体装置の製造が可能となった。
【図面の簡単な説明】
第１図は、樹脂被覆ボンディング細線のループ形状を説
明する図であって、Ａは側面ループ形状、Ｂは上面ルー
プ形状を示す。 復代理人弁理士　田村弘明

Claims (1)

    【特許請求の範囲】
  1. （１）金細線の表面に高分子材料の絶縁膜を被覆した半
    導体用ボンディング細線において、引張り試験により破
    断させたときの細線の伸びが０．５％以上３．５％以下
    であることを特徴とする樹脂被覆ボンディング細線。
JP2074151A 1990-03-23 1990-03-23 樹脂被覆ボンディング細線 Expired - Fee Related JPH0671022B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2074151A JPH0671022B2 (ja) 1990-03-23 1990-03-23 樹脂被覆ボンディング細線
US07/939,966 US5415922A (en) 1990-03-23 1992-09-04 Resin-coated bonding device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2074151A JPH0671022B2 (ja) 1990-03-23 1990-03-23 樹脂被覆ボンディング細線

Publications (2)

Publication Number Publication Date
JPH03273653A true JPH03273653A (ja) 1991-12-04
JPH0671022B2 JPH0671022B2 (ja) 1994-09-07

Family

ID=13538869

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2074151A Expired - Fee Related JPH0671022B2 (ja) 1990-03-23 1990-03-23 樹脂被覆ボンディング細線

Country Status (2)

Country Link
US (1) US5415922A (ja)
JP (1) JPH0671022B2 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3256367B2 (ja) * 1994-03-10 2002-02-12 新日本製鐵株式会社 樹脂被覆絶縁ボンディングワイヤ
US20020113322A1 (en) * 2000-06-12 2002-08-22 Shinichi Terashima Semiconductor device and method to produce the same
DE10359088A1 (de) * 2003-12-17 2005-07-21 Conti Temic Microelectronic Gmbh Elektronisches Gerät
DE102004043020B3 (de) * 2004-09-06 2006-04-27 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Bonddraht und Bondverbindung

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59154054A (ja) * 1983-02-23 1984-09-03 Hitachi Ltd ワイヤおよびそれを用いた半導体装置
JPS6280240A (ja) * 1985-10-01 1987-04-13 Tanaka Denshi Kogyo Kk 半導体素子のボンデイング用金線

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583239A (ja) * 1981-06-29 1983-01-10 Seiko Epson Corp ボンデイング用ワイヤ−
JPS5987702A (ja) * 1982-11-10 1984-05-21 三菱電線工業株式会社 絶縁電線
US4860941A (en) * 1986-03-26 1989-08-29 Alcan International Limited Ball bonding of aluminum bonding wire

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59154054A (ja) * 1983-02-23 1984-09-03 Hitachi Ltd ワイヤおよびそれを用いた半導体装置
JPS6280240A (ja) * 1985-10-01 1987-04-13 Tanaka Denshi Kogyo Kk 半導体素子のボンデイング用金線

Also Published As

Publication number Publication date
JPH0671022B2 (ja) 1994-09-07
US5415922A (en) 1995-05-16

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