JPH03263626A - Optical information recording, reproducing and erasing member - Google Patents
Optical information recording, reproducing and erasing memberInfo
- Publication number
- JPH03263626A JPH03263626A JP2061468A JP6146890A JPH03263626A JP H03263626 A JPH03263626 A JP H03263626A JP 2061468 A JP2061468 A JP 2061468A JP 6146890 A JP6146890 A JP 6146890A JP H03263626 A JPH03263626 A JP H03263626A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric layer
- recording
- thin film
- reproducing
- optical information
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はレーザビーム等により、情報を高密度、大容量
で記録再生及び消去できる光学情報記録再生消去部材に
関するものであも
従来の技術
光デイスクメモリに関してIt、 TeとTeO2を
主成分とするTe0x(0< x< 2.0)薄膜を用
いた追記型のディスクがあも さらにレーザ光により記
録薄膜を加熱し 溶!IL、% 急冷することにより、
非晶質化して情報を記録し またこれを加熱し徐冷する
ことにより結晶化して消去することができる材料として
S、RoOvshinsky (ニス・アール・オプシ
ンスキー)氏等のカルコゲン材料Ge+5Tes+5b
aS2等が知られている。まL As2S3やAs2
Sesあるいは5b2Set等カルコゲン元素と周期
律表第V族あるいはGe等の第■族元素等の組み合せか
らなる記録薄膜等が広く知られていも これらの記録薄
膜をレーザ光ガイド用の溝を設けた基板に形成し 光デ
ィスクとして用いることができも これらのディスクに
レーザ光で情報を記録し その情報を消去する方法と゛
してはあらかじめ記録薄膜を結晶化させておき、これに
直径約1μmに絞ったレーザ光を情報に対応させて強度
変調を施し 例えば円盤状の記録ディスクを回転せしめ
て照射した場合、このピークパワーレーザ光照射部位(
上 記録薄膜の融点以上に昇温し かつ急冷し 非晶質
化したマークとして情報の記録がおこなえる。またこの
変調バイアスパワーレーザ光照射部位は 記録薄膜の結
晶化温度以上に昇温し 低記録信号情報を消去する働き
があリオーバライトできも このように記録薄膜はレー
ザ光によって融点以上に昇温し また結晶化温度以上に
昇温されるこのため記録薄膜の両側に耐熱性のすぐれた
誘電体層を、基板および接着層に対する保護層として設
けるのが一般的であもこの誘電体層の特性、すなわち熱
伝導特性あるいは熱膨張係数等の特性によって記録・消
去特法繰り返し特性が左右されるものであん このため
誘電体の材質あるいは層構成によって記録・消去の特性
繰り返し特性を向上させることができるものであも
発明が解決しようとする課題
記録薄膜を加熱昇温し 溶融急冷非晶質化および加熱昇
温徐冷結晶化の手段を用いる情報記録および消去可能な
オーバライド記録媒体における第一の課題は消去詩法
第二の課題は記録消去の繰り返し特性であa 消去特性
についてはTeを含む非晶質膜(よ その融点は代表的
なもので400℃から900℃と広い温度範囲にあるこ
れらの記録薄膜にレーザ光を照射し 昇温徐冷すること
により結晶化か行える。この温度は一般的に融点より低
い結晶化温度領域である。またこの結晶化した膜に高い
パワーレベルのレーザ光をあて、その融点以上に加熱す
るとその部分は溶融し急冷上 再び非晶質化してマーク
が形成できも 記録マークとして非晶質化を選ぶと、こ
のマークは記録薄膜が溶融し急冷されて形成されるもの
であるかム 冷却速度が速いほど非晶質状態の均一なも
のが得られ信号振幅か向上す為 冷却速度が遅い場合は
マークの中心と周辺では非晶質化の程度に差が発生すも
次に結晶化消去に際してg& レーザ光の照射により
、既に記録が行われている非晶質マーク部を結晶化温度
以上に昇温し 結晶化させてこのマークを消去する。こ
の時、マークの非晶質状態が均一な場合(i 均一に結
晶化されやすくなり消去特性が向上する力文 マークの
非晶質状態が不均一な場合(よ 結晶化消去の状態が不
均一となって消去特性が低下すると言った課題があっ1
. 記録・消去の繰り返し特性については急速な加熱
冷却の多数回の繰り返しによるディスク基板あるいは
誘電体層の熱的な損傷がある。ディスク基板あるいは誘
電体層が熱的な損傷を受けた場合、記録・消去の繰り返
しにおいて、ノイズの増大を生じ特性の劣化が発生する
という課題があっ九 本発明の目的は記録消去特性に優
れ 繰り返し特性の安定な光ディスクを提供することで
ある。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an optical information recording/reproducing/erasing member capable of recording/reproducing/erasing information with high density and large capacity using a laser beam or the like. Regarding it, there is a write-once disk using a Te0x (0<x<2.0) thin film whose main components are Te and TeO2.Furthermore, the recording thin film is heated with laser light and melted! IL, % By rapid cooling,
A chalcogen material Ge+5Tes+5b by S. RoOvshinsky et al. is a material that can record information by becoming amorphous and then crystallize and erase it by heating and slowly cooling it.
aS2 etc. are known. MaL As2S3 and As2
Although recording thin films made of a combination of a chalcogen element such as Ses or 5b2Set and a group V element of the periodic table or a group I element such as Ge are widely known, these recording thin films are used on a substrate with grooves for guiding laser light. However, the method of recording information on these disks with laser light and erasing that information is to crystallize the recording thin film in advance, and then apply a laser focused to a diameter of about 1 μm to this disk. For example, when a disc-shaped recording disk is rotated and irradiated with intensity modulation according to information, this peak power laser beam irradiation area (
Information can be recorded as marks that are heated above the melting point of the recording thin film and rapidly cooled to become amorphous. In addition, the area irradiated with this modulated bias power laser beam is heated to a temperature higher than the crystallization temperature of the recording thin film, and the recording thin film has the function of erasing low recorded signal information, allowing reoverwriting. Because the temperature rises above the crystallization temperature, it is common to provide a dielectric layer with excellent heat resistance on both sides of the recording thin film as a protective layer for the substrate and adhesive layer. Recording/erasing special repeatability characteristics are affected by characteristics such as thermal conductivity or thermal expansion coefficient. Therefore, recording/erasing characteristics and repeatability characteristics can be improved by changing the material or layer structure of the dielectric. Problems to be Solved by the Amo Invention The first problem in information recording and erasable override recording media using means of heating and heating a recording thin film, melting, rapidly cooling, and crystallizing it and heating and slowly cooling it to crystallize it is to erase the recording thin film. poetry
The second issue is the repeatability of recording and erasing. Crystallization can be achieved by irradiating the film with a laser beam and gradually cooling it.This temperature is generally in the crystallization temperature range lower than the melting point.Also, by irradiating this crystallized film with a high power level laser beam, the film can be crystallized. If heated above the melting point, that part will melt and then rapidly cool down, becoming amorphous again and forming a mark.If amorphous recording is selected as the recording mark, this mark will be formed by the recording thin film melting and rapidly cooling. The faster the cooling rate, the more uniform the amorphous state will be obtained and the higher the signal amplitude.If the cooling rate is slower, there will be a difference in the degree of amorphization between the center and the periphery of the mark. When erasing crystallization, the temperature of the amorphous mark part where recording has already been made is raised to a temperature higher than the crystallization temperature by irradiation with laser light, crystallizing it and erasing the mark.At this time, the amorphous part of the mark When the quality state of the mark is uniform (i) The mark is more likely to be uniformly crystallized and the erasing properties are improved.When the amorphous state of the mark is uneven (y) The crystallization and erasing state is uneven and the erasing properties are deteriorated. There is one task that I said I would do.
.. Regarding the repeated recording/erasing characteristics, there is thermal damage to the disk substrate or dielectric layer due to rapid heating and cooling repeated many times. If the disk substrate or dielectric layer is thermally damaged, there is a problem in that noise increases and characteristics deteriorate during repeated recording and erasing. An object of the present invention is to provide an optical disc with stable characteristics.
課題を解決するための手段
本発明は記録薄膜と、該記録薄膜の両側に誘電体層を積
層した光学情報記録再生消去部材であって、透明基板の
一方の面に 第一の誘電体層 記録薄膜 第二の誘電体
層 第二の誘電体層と異なる材質の第三の誘電体層 反
射層を順次形威し第三の誘電体層を第1 第二の誘電体
層より、熱膨張係数の小さい材質にす衣 あるいは第二
の誘電体層を第ス 第三の誘電体層より熱膨張係数の小
さな材料で構成にするものであも
作用
すなわち熱膨張係数の小さな誘電体層を第二の誘電体層
と反射層の間に設けて第三の誘電体層を形成すること、
あるいは記録薄膜と第三の誘電体層の間に設けて第二の
誘電体層を形成することによって、記録・消去時の記録
薄膜の熱による記録薄膜の両側の誘電体層の熱変形を小
さくすることができるものであム これらの誘電体層の
熱変形は永久的なものではなく、レーザ光が照射された
瞬間だけ加熱されて膨張し レーザが照射されていない
時は冷却されて元の状態に戻ることを繰り返すものであ
a この誘電体層の脈動がディスクの回転方向が一定で
あるために 記録薄膜をディスクの回転方向に移動させ
ることになって、繰り返し特性を劣化させることになる
ものであも これに対して熱膨張係数の小さな誘電体層
を一層設けることによって、記録薄膜の両側の誘電体層
の熱変形を小さくすることができて繰り返し特性を改善
することができるものであも
実施例
以下、本発明の一実施例を図面に基づいて説明する。第
1図において1はディスク基板でポリカーボネイト等の
樹脂基板からなっていも このディスク基板1はあらか
じめレーザ光案内用の溝を形成した樹脂基板あるいはフ
ォトポリマーを用いた いわゆる2P法で溝を形成した
ガラス板 ガラス板に直接溝を形成した基板であっても
よし12は第一の誘電体層で耐熱性に優れたZnSを主
成分とした材質からなっており膜厚は約150nIIl
である。Means for Solving the Problems The present invention provides an optical information recording/reproducing/erasing member comprising a recording thin film and a dielectric layer laminated on both sides of the recording thin film, the first dielectric layer recording on one surface of a transparent substrate. Thin film Second dielectric layer Third dielectric layer made of a different material from the second dielectric layer The reflective layer is sequentially formed to form the third dielectric layer with a thermal expansion coefficient higher than that of the second dielectric layer. Alternatively, the second dielectric layer may be made of a material with a smaller coefficient of thermal expansion than the third dielectric layer. forming a third dielectric layer between the dielectric layer and the reflective layer;
Alternatively, by forming a second dielectric layer between the recording thin film and the third dielectric layer, the thermal deformation of the dielectric layers on both sides of the recording thin film due to the heat of the recording thin film during recording and erasing can be reduced. Thermal deformation of these dielectric layers is not permanent; they heat and expand only the moment the laser beam is irradiated, and when the laser is not irradiated, they cool and return to their original state. Since the direction of rotation of the disk is constant, this pulsation of the dielectric layer causes the recording thin film to move in the direction of rotation of the disk, degrading the repeatability. However, by providing one layer of dielectric material with a small coefficient of thermal expansion, thermal deformation of the dielectric material layers on both sides of the recording thin film can be reduced and the repeatability characteristics can be improved. Embodiment Hereinafter, an embodiment of the present invention will be described based on the drawings. In Fig. 1, reference numeral 1 denotes a disk substrate, which may be made of a resin substrate such as polycarbonate, or a resin substrate with grooves formed in advance for guiding laser light, or a glass substrate with grooves formed using the so-called 2P method using photopolymer. Plate It may be a substrate with grooves formed directly on a glass plate. 12 is the first dielectric layer, which is made of a material whose main component is ZnS, which has excellent heat resistance, and has a film thickness of about 150 nIIl.
It is.
3は記録薄膜でTe−Ge−3bからなる合金薄膜であ
り膜厚は約30nmである。 4は第二の誘電体層で、
第一の誘電体層と同じ材質からなっており膜厚は約20
nmである。5は第三の誘電体層で、熱膨張係数の小さ
い5iO2(熱膨張係数0.45x 10−’に一層)
からなっており膜厚は約20nmであ7)。 6はAI
からなる反射層で膜厚は約60nmである。これらの薄
膜の形成方法としてGEL 真空蒸着あるいはスパッ
タ法が使用できる。7は保護板で接着剤8によってディ
スク基板1に貼り合わせている。第1図の構成において
記録・消去及び再生は矢印9の方向より、情報に応じて
強度変調を施したレーザ光を照射して、また反射光を検
出して行うものであも ここで前記したように熱膨張係
数の小さな第三の誘電体層5を設けていることによって
、記録 消去の繰り返しで発生する第二 第二の誘電体
層2、4の熱変形による脈動を抑制することになって繰
り返し特性を大幅に改善することができるものであも徹
第二の誘電体層4と第三の誘電体層5の材質が入れか
わっても同様の効果を得られるものである。また第二の
誘電体層4と第三の誘電体層5の膜厚を合わせて約40
nmと薄くしている力交 これによって熱拡散層となる
反射層6と記録薄膜3が近くなり記録・消去時の記録薄
膜3の熱が急速に反射層6に伝達されることになり、記
録薄膜3を急冷する上で効果があるものであり、この記
録薄膜3と反射層6の間の誘電体層の材質と膜厚で冷却
速度を制御することができるものであム 本実施例のデ
ィスク構成で、外形130na 18QOrprn回
伝線速度8 m/secでfl−3,43MHzの信号
f2−1.0MHzの信号のオーバーライド特性を測定
し九 オーバーライド(よ 1個のサークルスポットで
直径約Iμmのレーザ光により、高いパワーレベル1ロ
mW、低いパワーレベル8m+1の間の変調で、高いパ
ワーレベルで非晶質化マークを形8.シ 低いパワー
レベルで非晶質化マークを結晶化して消去する同時消録
の方法で行った この結巣 記録信号のC/N比として
i;L 55dB以上が得られ 消去特性として、オ
ーバライド消去率30dB以上が得られた オーバライ
ドの繰り返し特性について(よ 特にピットエラーレイ
トの特性を測定した結JJ、 1000000サイク
ル以上劣化が見られなかっ起
発明の詳細
な説明したように記録薄膜と反射層の間の薄層の誘電体
層を2層にして、いずれかの1層に熱膨張係数の小さい
材料を選び、第二 第三の誘電体層を合わせた膜厚を第
一の誘電体層よりも薄くすることによって以下の効果を
得られるものであも
(1)記録・消去時の誘電体層の熱変形による脈動を小
さくできることによって繰り返し特性が向上する。Reference numeral 3 denotes a recording thin film, which is an alloy thin film made of Te-Ge-3b and has a film thickness of about 30 nm. 4 is a second dielectric layer;
It is made of the same material as the first dielectric layer and has a thickness of approximately 20 mm.
It is nm. 5 is the third dielectric layer, which is made of 5iO2 with a small coefficient of thermal expansion (coefficient of thermal expansion 0.45 x 10-')
The film thickness is approximately 20 nm7). 6 is AI
The reflective layer is approximately 60 nm thick. GEL vacuum deposition or sputtering can be used to form these thin films. A protective plate 7 is attached to the disk substrate 1 with an adhesive 8. In the configuration shown in Fig. 1, recording, erasing, and reproducing are performed by irradiating a laser beam whose intensity is modulated according to the information in the direction of arrow 9 and by detecting the reflected light. By providing the third dielectric layer 5 with a small coefficient of thermal expansion, it is possible to suppress pulsations caused by thermal deformation of the second dielectric layers 2 and 4 that occur during repeated recording and erasing. Even if the materials of the second dielectric layer 4 and the third dielectric layer 5 are switched, the same effect can be obtained. Furthermore, the total thickness of the second dielectric layer 4 and the third dielectric layer 5 is approximately 40 mm.
As a result, the reflective layer 6, which serves as a heat diffusion layer, and the recording thin film 3 become close to each other, and the heat of the recording thin film 3 during recording and erasing is rapidly transmitted to the reflective layer 6. This is effective in rapidly cooling the thin film 3, and the cooling rate can be controlled by the material and thickness of the dielectric layer between the recording thin film 3 and the reflective layer 6. The override characteristics of a signal of fl-3, 43 MHz and a signal of f2-1.0 MHz were measured using a disc configuration with an external diameter of 130 na and a 18 Q Orprn circuit line speed of 8 m/sec. By modulating the laser beam between a high power level of 1 mW and a low power level of 8 mW, the amorphous mark is crystallized and erased at a low power level. This result was obtained using the simultaneous erasure method.The C/N ratio of the recorded signal was 55 dB or more.As for the erasure characteristics, an override erasure rate of 30 dB or more was obtained. After measuring the rate characteristics, no deterioration was observed after 1,000,000 cycles. The following effects can be obtained by selecting a material with a small coefficient of thermal expansion for the layers and making the combined thickness of the second and third dielectric layers thinner than the first dielectric layer (1). The repetition characteristics are improved by reducing the pulsation caused by thermal deformation of the dielectric layer during recording and erasing.
(2)記録信号振幅が増大L C/N比は55dB以
上に向上する。(2) Recording signal amplitude increases. L C/N ratio improves to 55 dB or more.
(3)記録マークが均一化し オーバライド消去率が3
0dB以上になり消去特性が向上すも(3) Recorded marks are uniform and override erasure rate is 3
Although the erasing characteristics improve as it becomes more than 0 dB.
第1図は本発明の一実施例における光学情報記録再生消
去部材の一部省略断面図であも1・・・・ディスク基敬
2・・・・第一の誘電体層3・・・・記録#! 4
・・・・第二の誘電体層 5・・・・第三の誘電体層
6・・・・反射層 7・・・・接ti−剋8・・・・保
護板FIG. 1 is a partially omitted sectional view of an optical information recording/reproducing/erasing member according to an embodiment of the present invention. record#! 4
...Second dielectric layer 5...Third dielectric layer
6... Reflective layer 7... Contact 8... Protective plate
Claims (10)
て昇温し、溶融し、急冷して非晶質化する性質と、非晶
質の状態を昇温することにより結晶化する性質とを有す
る記録薄膜と、該記録薄膜の両側に誘電体層を積層した
光学情報記録再生消去部材であって、透明基板の一方の
面に第一の誘電体層、記録薄膜、第二の誘電体層、第二
の誘電体層と異なる材質の第三の誘電体層、反射層を順
次形成し、第三の誘電体層を第一、第二の誘電体層より
、熱膨張係数の小さい材質にしたことを特徴とする光学
情報記録再生消去部材。(1) When irradiated with laser light, it absorbs the energy, heats up, melts, and rapidly cools to become amorphous, and the amorphous state crystallizes by heating it. An optical information recording/reproducing/erasing member comprising a recording thin film and a dielectric layer laminated on both sides of the recording thin film, the first dielectric layer, the recording thin film, and the second dielectric layer being on one side of a transparent substrate. , a third dielectric layer and a reflective layer made of a different material from the second dielectric layer are sequentially formed, and the third dielectric layer is made of a material with a smaller thermal expansion coefficient than the first and second dielectric layers. An optical information recording/reproducing/erasing member characterized by:
^8k^−^1以下の材質を選ぶことを特徴とする請求
項1記載の光学情報記録再生消去部材。(2) The thermal expansion coefficient of the third dielectric layer is 1.0×10^-
2. The optical information recording/reproducing/erasing member according to claim 1, wherein the material is selected from a material having a hardness of ^8k^-^1 or less.
電体層より薄くすることを特徴とする請求項1記載の光
学情報記録再生消去部材。(3) The optical information recording/reproducing/erasing member according to claim 1, wherein the combined thickness of the second and third dielectric layers is thinner than that of the first dielectric layer.
る材料を用い、第三の誘電体層としてSiO_2を用い
ることを特徴とする請求項1記載の光学情報記録再生消
去部材。(4) The optical information recording/reproducing/erasing member according to claim 1, wherein a material containing ZnS as a main component is used as the first and second dielectric layers, and SiO_2 is used as the third dielectric layer.
用いることを特徴とする請求項1記載の光学情報記録再
生消去部材。(5) The optical information recording/reproducing/erasing member according to claim 1, wherein a material consisting of Te, Ge, and Sb is used as the recording thin film.
て昇温し、溶融し、急冷して非晶質化する性質と、非晶
質の状態を昇温することにより結晶化する性質とを有す
る記録薄膜と、該記録薄膜の両側に誘電体層を積層した
光学情報記録再生消去部材であって、透明基板の一方の
面に、第一の誘電体層、記録薄膜、第二の誘電体層、第
二の誘電体層と異なる材質の第三の誘電体層、反射層を
順次形成し、第二の誘電体層を第一、第三の誘電体層よ
り、熱膨張係数の小さい材質にしたことを特徴とする光
学情報記録再生消去部材。(6) When irradiated with laser light, it absorbs the energy, heats up, melts, and rapidly cools to become amorphous, and the amorphous state crystallizes by heating it. An optical information recording/reproducing/erasing member comprising: a recording thin film; and a dielectric layer laminated on both sides of the recording thin film; A layer, a third dielectric layer made of a material different from that of the second dielectric layer, and a reflective layer are sequentially formed, and the second dielectric layer is made of a material with a smaller coefficient of thermal expansion than the first and third dielectric layers. An optical information recording/reproducing/erasing member characterized by:
^8k^−^1以下の材質を選ぶことを特徴とする請求
項6記載の光学情報記録再生消去部材。(7) The thermal expansion coefficient of the second dielectric layer is 1.0×10^-
7. The optical information recording/reproducing/erasing member according to claim 6, wherein the material is selected from a material having a hardness of ^8k^-^1 or less.
電体層より薄くすることを特徴とする請求項6記載の光
学情報記録再生消去部材。(8) The optical information recording/reproducing/erasing member according to claim 6, wherein the combined thickness of the second and third dielectric layers is thinner than that of the first dielectric layer.
る材料を用い、第二の誘電体層としてSiO_2を用い
ることを特徴とする請求項6記載の光学情報記録再生消
去部材。(9) The optical information recording/reproducing/erasing member according to claim 6, wherein the first and third dielectric layers are made of a material containing ZnS as a main component, and the second dielectric layer is made of SiO_2.
を用いることを特徴とする請求項6記載の光学情報記録
再生消去部材。(10) The optical information recording/reproducing/erasing member according to claim 6, wherein a material consisting of Te, Ge, and Sb is used as the recording thin film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2061468A JP2778188B2 (en) | 1990-03-13 | 1990-03-13 | Optical information recording / reproduction member |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2061468A JP2778188B2 (en) | 1990-03-13 | 1990-03-13 | Optical information recording / reproduction member |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH03263626A true JPH03263626A (en) | 1991-11-25 |
JP2778188B2 JP2778188B2 (en) | 1998-07-23 |
Family
ID=13171912
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2061468A Expired - Fee Related JP2778188B2 (en) | 1990-03-13 | 1990-03-13 | Optical information recording / reproduction member |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2778188B2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997013246A1 (en) * | 1995-10-03 | 1997-04-10 | Asahi Kasei Kogyo Kabushiki Kaisha | Optical information recording medium, method of manufacturing the medium, and target used for manufacturing the medium |
US5681632A (en) * | 1995-02-13 | 1997-10-28 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium |
US5712833A (en) * | 1993-12-28 | 1998-01-27 | Ogihara; Noriyuki | Durable magneto-optical disk having a rare earth-transition amorphous magneto-optical layer |
EP0874361A3 (en) * | 1997-04-25 | 1999-04-07 | Teijin Limited | Phase change optical recording medium and process for manufacturing same |
US6159571A (en) * | 1997-08-14 | 2000-12-12 | Lg Electronics Inc. | Phase-change optical disc |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62102441A (en) * | 1985-10-30 | 1987-05-12 | Fujitsu Ltd | Optical recording media and their manufacturing method |
JPH0256746A (en) * | 1988-08-19 | 1990-02-26 | Matsushita Electric Ind Co Ltd | Information carrier disk |
-
1990
- 1990-03-13 JP JP2061468A patent/JP2778188B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62102441A (en) * | 1985-10-30 | 1987-05-12 | Fujitsu Ltd | Optical recording media and their manufacturing method |
JPH0256746A (en) * | 1988-08-19 | 1990-02-26 | Matsushita Electric Ind Co Ltd | Information carrier disk |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5712833A (en) * | 1993-12-28 | 1998-01-27 | Ogihara; Noriyuki | Durable magneto-optical disk having a rare earth-transition amorphous magneto-optical layer |
US5681632A (en) * | 1995-02-13 | 1997-10-28 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium |
WO1997013246A1 (en) * | 1995-10-03 | 1997-04-10 | Asahi Kasei Kogyo Kabushiki Kaisha | Optical information recording medium, method of manufacturing the medium, and target used for manufacturing the medium |
EP0874361A3 (en) * | 1997-04-25 | 1999-04-07 | Teijin Limited | Phase change optical recording medium and process for manufacturing same |
US6445675B1 (en) | 1997-04-25 | 2002-09-03 | Teijin Limited | Phase change optical recording medium and process for manufacturing same |
US6159571A (en) * | 1997-08-14 | 2000-12-12 | Lg Electronics Inc. | Phase-change optical disc |
Also Published As
Publication number | Publication date |
---|---|
JP2778188B2 (en) | 1998-07-23 |
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