JPH03218660A - Package for storing semiconductor elements - Google Patents

Abstract

PURPOSE:To reduce noises generated in an outer lead terminal and the attenuation of signal in the outer lead terminal to the irreducible minimum by a method wherein the outer lead terminal is formed of conductive material specified im magnetic permeability, thermal expansion coefficient, and electrical conductivity. CONSTITUTION:An outer lead terminal 5 is formed of material whose magnetic permeability, thermal expansion coefficient, and electrical conductivity are 210 (CGS) or below, 5-12X10<-6>/ deg.C, and 10% (IACS) or above respectively. Therefore, as the outer lead terminal 5 is low in magnetic permeability, a large self- inductance is never induced in it even if a current is made to flow through the lead terminal 5. By this setup, noises caused by a counter electromotive force induced by a self-inductance can be minimized, a semiconductor element 4 housed in a package operates always normally, and as the lead terminal 5 is high in electrical conductivity and a current flows easily through it, the outer lead terminal 5 becomes high in signal transmission speed.

Description

DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an improvement in a semiconductor element housing package that houses a semiconductor element.

(Prior Art) Conventionally, a package for accommodating a semiconductor element, particularly a glass-sealed semiconductor element accommodating package sealed by glass welding, consists of an insulating base and a lid body, and the semiconductor element is housed inside. The device is composed of an insulating container having a cavity to open the container, and an external lead terminal for electrically connecting the semiconductor element housed in the container to an external electric circuit. After forming a glass member for sealing on the surface in advance, fixing external lead terminals to the main surface of the insulating substrate, and connecting each electrode of the semiconductor element and the external lead terminal by wire bonding, the insulating substrate and the lid are attached. The semiconductor element is hermetically sealed inside by melting and integrating the sealing glass members attached to each of the parts.

(Problem to be Solved by the Invention) However, in this conventional glass-sealed package for storing semiconductor elements, the external lead terminals are usually Kovar (29W).
t%Ni-16Wt%Co-55Wt%Fe alloy) and 4
2Alloy (42Wt%Ni-58Wt%Fe alloy)
It is made of conductive materials such as Kovar and 42All.
Oy and the like have high magnetic permeability and low electrical conductivity, so they have the following drawbacks.

That is, ■ Kovar and 42Alloy are iron (Fe) and nickel (
It is made only of ferromagnetic metals such as Ni) and cobalt (Co), and its magnetic permeability is 250 to 700 (CGS
) and high.

Therefore, when a current flows through the external lead terminal made of Kovar, 42Alloy, etc., a large self-inductance proportional to the magnetic permeability is generated in the external lead terminal, which induces back electromotive force and becomes noise. Kovar and 42Alloy have a conductivity of 3.0 to 3.
．． It is as low as 5% (IACS). Therefore, this Kobar and 4
When a signal is propagated to an external lead terminal made of 2Alloy, etc., the signal propagation speed becomes extremely slow, making it impossible to accommodate semiconductor devices that drive at high speed. With the progress of higher density and higher integration of semiconductor elements to be accommodated, the number of electrodes on semiconductor elements has increased significantly, and the line width of external lead terminals that connect each electrode of semiconductor elements to an external electric circuit has increased. It is also becoming extremely thin. Therefore, the electrical resistance of the external lead terminal has become extremely large due to the low conductivity of Kovar and 42AIIoy described in (2) above, and when a signal is propagated to the external lead terminal, the external lead terminal The signal is greatly attenuated due to the electrical resistance of the device, making it impossible to accurately input the signal to the semiconductor device housed inside the device, resulting in malfunction of the semiconductor device.

(Object of the Invention) The present invention was devised in view of the above-mentioned drawbacks, and its purpose is to minimize the noise generated at the external lead terminals and the attenuation of signals at the external lead terminals, and to minimize the noise generated at the external lead terminals and the attenuation of signals at the external lead terminals. It is an object of the present invention to provide a package for storing a semiconductor element, which enables reliable input and output of signals and allows the semiconductor element to operate normally and stably for a long period of time.

Another object of the present invention is to provide a semiconductor device storage package that can accommodate semiconductor devices that operate at high speed.

(Means for Solving the Problems) The present invention provides a container comprising an insulating base and a lid and having a cavity for accommodating a semiconductor element therein, and an external electric circuit for connecting the semiconductor element housed in the container. In a package for storing a semiconductor element, the external lead terminal has a magnetic permeability of 210 (CGS).
Hereinafter, it is characterized by being formed of a conductive material having a thermal expansion coefficient of 5 to 12X 10-'/'C1 conductivity 1O% (IACS) or more.

(Example) Next, the present invention will be explained in detail based on the accompanying drawings.

FIGS. 1 and 2 show an embodiment of the semiconductor element storage package of the present invention, where 1 is an insulating base and 2 is a lid.

The insulating base 1 and the lid 2 constitute an insulating container 3.

The insulating base 1 and the lid 2 are each provided with a recess in the center thereof to form a cavity for accommodating a semiconductor element, and the semiconductor element 4 is placed in resin, glass, or wax on the bottom of the recess of the insulating base 1. It is attached and fixed via adhesive such as material.

The insulating base 1 and the lid 2 are made of alumina ceramics, steatite ceramics, spinel ceramics, forsterite ceramics, etc. When the insulating base 1 and the lid 2 are made of alumina ceramics, for example, the insulation as shown in FIG. By filling raw material powder of alumina ceramics into a press mold having a shape corresponding to the base body 1 and the lid body 2 and molding it by applying a constant pressure, the molded product is then fired at a temperature of about 1500 ° C. Manufactured.

The alumina ceramics, steatite ceramics, spinel ceramics, and forsterite ceramics forming the insulating base 1 and the lid 2 each have a coefficient of thermal expansion of 6.5 to 7.5×10-@/'C,
7.0~8.5X10-'/'C, 7.0~8.5
×10-'/'C, 10.0-11. OXIO-
” / 'C, and is made of ceramic that does not cause a large difference in thermal expansion coefficient between the insulating base l and the lid 2 and the sealing glass member in relation to the thermal expansion coefficient of the sealing glass member described later. Select and use as appropriate.

Further, a sealing glass member 6 is formed in advance on the opposing main surfaces of the insulating base l and the lid 2, and each of the insulating base l and the lid 2 is coated with a glass member 6 for sealing. The semiconductor element 4 in the insulating container 3 is hermetically sealed by heating and melting the earthenware glass member 6 to integrate it.

The sealing glass member 6 attached to the opposing main surfaces of the insulating base 1 and the lid 2 is made of lead borosilicate glass, for example, and contains lead oxide (PbO) 70 as a raw material powder.
~90 Wt%, boron oxide (B20z)tz~13
Wt%, silica (Si02) 0.5 to 3.0 Wt% and alumina (Ai' 203) 0.5 to 3.0 Wt%
and the mixed powder at 950-1100°C.
It is manufactured by heating and melting at a temperature of . This lead borosilicate glass has a coefficient of thermal expansion of lθ~12
XlO-'/''C, and lead titanate (P) is added to the above glass.
bTiOa), β-eucryptite (Li2Al2S
i208), cordierite (Mg2A14Si501f
i), zircon (ZrSi04), tin oxide (SnO
2), Willemite (Zn2Si04) etc. 20-5
When 0 Wt% is added, the coefficient of thermal expansion is 5.0~
10. It is variable in the range of OX 10-@/'C.

The sealing glass member 6 has a thermal expansion coefficient of 5.0 to 1.
2X10-'/'C, which approximates the coefficient of thermal expansion of each of the insulating base 1 and the lid 2, so the sealing glass member 6 attached to each of the insulating base 1 and the lid 2 is heated. When the semiconductor element 4 in the insulating container 3 is hermetically sealed by melting and integrating, there is a difference in thermal expansion coefficient between the insulating base l and the lid 2 and the sealing glass member 6. There is almost no thermal stress caused by this, and it becomes possible to firmly join the insulating base 1 and the lid 2 via the sealing glass member 6.

The sealing glass member 6 is formed by applying a conventionally known thick film method to a glass paste obtained by adding an appropriate organic solvent or solvent to powder of lead borosilicate glass, thereby forming the insulating substrate 1 and the glass paste. They are formed on the opposing main surfaces of the lid body 2.

Further, the sealing glass member 6 is not limited to lead borosilicate glass, and has a thermal expansion coefficient of 5 to 12X1.
Any glass in the range 0-'/'C can be used.

An external lead terminal 5 made of a conductive material is disposed between the insulating base l and the lid 2.
Each electrode of the semiconductor element 4 is electrically connected via a bonding wire 7, and the semiconductor element 4 is connected to the external electric circuit by connecting the external lead terminal 5 to the external electric circuit.

The external lead terminal 5 is formed by melting and integrating the sealing glass member 6 attached to the opposing main surfaces of the insulating base l and the lid 2, and simultaneously sealing the insulating base l when the insulating container 3 is hermetically sealed. and the lid body 2.

The external lead terminal 5 is made of 42Alloy (Ni-Co
The outer surface of the core is made of copper (alloy), which is a non-magnetic metal.
Coated with copper (Cu), a non-magnetic metal
) is coated with chromium-iron alloy (Cr-Fe) on the outer surface of the core.
alloy), nickel-iron alloy (Ni-Fe alloy), nickel-cobalt iron alloy (Ni-Co-Fe alloy), or plate-shaped iron (Fe) or invar alloy (36.5 Wt%Ni) -63. 5Wt%Fe alloy) with copper (Cu), a non-magnetic metal, bonded to the top and bottom surfaces, and copper (CiJ), a non-magnetic metal, containing inorganic substances such as carbon and alumina ceramics. The magnetic permeability is 210 (CGS) or less, the electrical conductivity is 10% (IACS) or more, and the thermal expansion coefficient is 5 to 12X.
10-'/'C conductive material.

The magnetic permeability of the external lead terminal 5 is 210 (CGS).
Since the magnetic permeability is low, even if a current flows through the external lead terminal 5, a large self-inductance is not generated in the external lead terminal 5, and as a result, the back electromotive force induced by the self-inductance is Semiconductor element 4 that minimizes noise caused by electric power and houses it inside.
It can always be operated normally.

Further, the conductivity of the external lead terminal 5 is 10% (IA
CS) As above, since electricity can easily flow, the signal propagation speed of the external lead terminal 5 can be made extremely high, and even if the semiconductor element 4 housed in the insulating container 3 is driven at high speed, the semiconductor element 4 The input and output of signals between the terminal and the external electric circuit can always be carried out stably and reliably.

At the same time, since the conductivity of the external lead terminal 5 is high, even if the line width of the external lead terminal 5 becomes thin, the electrical resistance of the external lead terminal 5 can be kept low, and as a result,
By minimizing the attenuation of the signal at the external lead terminal 5, it is possible to accurately input the electrical signal supplied from the external electrical circuit to the semiconductor element 4 housed inside.

Furthermore, the external lead terminal 5 has a thermal expansion coefficient of 5.
~12X10-@/'C, and the sealing glass member 6
When the external lead terminal 5 is fixed between the insulating base 1 and the lid 2 using the sealing glass member 6, the thermal expansion coefficient of the external lead terminal 5 and the sealing glass member 6 is approximated by Thermal stress due to the difference in coefficient of thermal expansion between the two does not occur, and the external lead terminal 5 can be firmly fixed to the sealing glass member 6.

Thus, according to this package for storing semiconductor elements,
A semiconductor element 4 is attached and fixed to the bottom of the recess of the insulating substrate 1, and each electrode of the semiconductor element 4 is connected to a bonding wire 7.
After that, the sealing glass member 6 is connected to the external lead terminal 5 by the insulating base 1 and the lid 2, which have been previously attached to the opposing main surfaces of the insulating base 1 and the lid 2. They are joined by melting and integrating, thereby completing a semiconductor device as a final product.

(Effects of the Invention) According to the semiconductor element storage package of the present invention, the external lead terminals that connect the semiconductor element to the external circuit have a magnetic permeability of 2.
10 (CGS) or less, conductivity of 10% (IACS) or more, and thermal expansion coefficient of 5 to 12X10-'/''C, so even if a current is passed through the external lead terminal, the external lead will not work. A large self-inductance is not generated in the terminal, and as a result, the noise caused by the back electromotive force induced by the self-inductance is minimized, and the semiconductor elements housed inside can always operate normally. becomes.

In addition, the signal propagation speed of the external lead terminal can be made extremely fast, so that even if the semiconductor element housed in the insulating container is driven at high speed, the signal input and output between the semiconductor element and the external electric circuit is always stable. Moreover, it becomes possible to do so reliably and reliably.

Furthermore, even if the line width of the external lead terminal becomes thinner, the electrical resistance of the external lead terminal can be kept low, and as a result, the attenuation of the signal at the external lead terminal is minimized, and the external electrical circuit is connected to the semiconductor element housed inside. It becomes possible to accurately input the supplied electrical signal.

Furthermore, the coefficient of thermal expansion of the external lead terminal is close to that of each of the insulating base, the lid, and the sealing glass member, and the external lead terminal is sandwiched between the insulating base and the lid, and each Even if the sealing glass member is attached and bonded, there may be differences in thermal expansion coefficients between the insulating base and lid and the sealing glass member, and between the external lead terminal and the sealing glass member. No thermal stress is generated, and it is possible to firmly attach and join everything.

[Brief explanation of drawings]

FIG. I is a sectional view showing an embodiment of the semiconductor element storage package of the present invention, and FIG. 2 is a plan view of the package shown in FIG. 1, viewed from the top surface of the insulating base. l: Insulating base 2: Lid body

Claims (1)

[Claims] A semiconductor consisting of a container consisting of an insulating base and a lid and having a cavity for accommodating a semiconductor element therein, and an external lead terminal for connecting the semiconductor element housed in the container to an external electric circuit. In the device housing package, the external lead terminals have a magnetic permeability of 210 (CGS) or less, a thermal expansion coefficient of 5 to 12 x 10^-^6/℃, and an electrical conductivity of 10% (I
A package for storing semiconductor elements, characterized in that it is formed of a conductive material of ACS) or higher.