JPH03209727A - Semiconductor device - Google Patents

Abstract

PURPOSE:To suppress the generation of a channel between an emitter and a collector by a structure wherein the P-type diffused part of a collector part is not provided beneath the aluminum wiring of an anode electrode. CONSTITUTION:There are a cathode electrode 1, an anode electrode 2, an isolated diffused part 3, a base diffused part (for a collector) 4, a contact part 5 for a collector electrode, a base diffused part (for an emitter) 6, a contact part 7 for an emitter electrode, an emitter diffused part 8, a contact part 9 for a base electrode, an oxide film 10, an N-type embedded layer 11, a P-type substrate 12 and an epitaxial layer 13. The P-type diffusion part of the collector part beneath the aluminum wiring of the anode electrode 2 is not provided. Therefore, a channel is hard to be generated between the emitter and the collector (between base diffused parts).

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and in particular provides a semiconductor device with an improved structure of a lateral PNP transistor (hereinafter referred to as lateral PNPTr).

[Conventional technology]

4 and 5 are a plan view and a cross-sectional view showing the structure of the diode shown in FIG. 3, which is composed of a lateral PNPTr with the base and collector of the conventional semiconductor device shorted. In the figure, (1) is the cathode electrode. , (2) is the anode electrode, (8) is the separation diffusion, (4) is the base expansion lk, (5)
(6) is the base diffusion (
Same base diffusion as in 4), (γ) is the contact part for the emitter electrode, (8) is the emitter diffusion, (9) is the contact part for the base electrode, (10) is the oxide film, and (11) is the N-type buried layer. , (12) is a P-type substrate, and (13) is an epitaxial layer.

Next, the operation will be explained.

Generally, there are several types of diodes used in Pipolar E-C, but a diode with a lateral PNPTr whose base and collector are short-circuited to serve as a cathode and whose emitter is an anode is used for high breakdown voltage.

[Problem to be solved by the invention]

A diode composed of a lateral PNPTh whose base and collector are shorted in a conventional semiconductor device has a structure as shown in Figs. 4 and 5, so when the reverse bias voltage increases, the anode A channel (141) occurs between the base diffusions (4) under the electrode (2).

An increase in reverse bias means that the aluminum (anode terminal) on the low potential side (2) and the epitaxial layer 0 on the high potential side form a capacitor with an oxide film (to) as an insulating layer. When type carriers are attracted to the surface of 81 and P type carriers are accumulated, they leak from the P of the base diffusion (4) to the P of the base diffusion (6) in the channel α4.Therefore, the problem is that they tend to leak from the cathode to the anode. There was a point.

This invention was made in order to solve the above-mentioned problems, and the object is to obtain a diode semiconductor device by constructing a lateral PNPTr with a short-circuited base collector, which has a structure in which channel formation is difficult. Means for Solving the Problems] A semiconductor device according to the present invention has a structure in which a P-type diffusion of the collector portion is not provided under the aluminum wiring of the anode electrode.

[Effect]

The semiconductor device of this invention has a structure in which no P-type diffusion is provided in the collector section under the aluminum wiring of the anode electrode, so a channel is less likely to occur between the emitter and the collector (between the base diffusion), and the υ is higher than that of the conventional device. A diode with high voltage resistance can be obtained.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings. 1st
FIG. 2 is a plan view and a sectional view showing a diode constituted by a lateral PNPTr with a short-circuited base and collector according to an embodiment of the present invention. This is the same or equivalent part to that of , and the explanation thereof will be omitted below.

In this embodiment, since no P-type diffusion is provided in the collector portion under the aluminum wiring of the anode electrode (2), channel α leakage is unlikely to occur between the emitter and collector (between the base diffusion).

〔Effect of the invention〕

As described above, according to the present invention, since the structure is such that no P-type diffusion in the collector part is provided under the aluminum wiring of the anode electrode, a channel is less likely to occur between the emitter and the collector (between the base diffusion), and compared to the conventional one. This has the effect of providing a semiconductor device (diode) with a much higher breakdown voltage.

[Brief explanation of drawings]

1 and 2 are a plan view showing a semiconductor device according to an embodiment of the present invention, and a sectional view taken along the line T in FIG.
An explanatory diagram of a diode in which the base and collector of the NPTr are short-circuited. FIGS. 4 and 5 are a plan view showing a conventional semiconductor device and a sectional view taken along the line ■-V in FIG. 4. FIG. FIG. 2 is an explanatory diagram showing a channel generation part in an enlarged manner. In the figure, (1) is the cathode electrode, (2) is the anode electrode, (8) is the separation diffusion, (4) is the base diffusion (for collector), (5) is the contact part for the collector electrode, (6)
is the base diffusion (for emitter), (γ) is the contact part for the emitter electrode, (8) is the emitter diffusion, (9) is the contact part for the base electrode, (10) is the oxide film, (11) is the N
A type buried layer, (12) a P-type substrate, and (13) an epitaxial layer. In the figures, the same symbols indicate the same or equivalent parts. Agent Masuo Oiwa Figure 1 Figure 2 Figure 3 Figure 4

Claims (1)

[Claims] A semiconductor device in which the base and collector of a lateral PNP transistor are short-circuited and the short-circuited terminal and emitter constitute a diode, characterized in that a P-type diffusion in the collector portion is not provided under the aluminum wiring of the anode electrode. Semiconductor equipment.