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JPH03170440A - Method for protecting and deprotecting carboxylic acid, phosphoric acid or sulfonic acid - Google Patents

Method for protecting and deprotecting carboxylic acid, phosphoric acid or sulfonic acid

Info

Publication number
JPH03170440A
JPH03170440A JP1311556A JP31155689A JPH03170440A JP H03170440 A JPH03170440 A JP H03170440A JP 1311556 A JP1311556 A JP 1311556A JP 31155689 A JP31155689 A JP 31155689A JP H03170440 A JPH03170440 A JP H03170440A
Authority
JP
Japan
Prior art keywords
acid
group
protecting
carboxylic acid
protected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1311556A
Other languages
Japanese (ja)
Inventor
Yoshihisa Tsukada
芳久 塚田
Mitsunori Ono
光則 小野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP1311556A priority Critical patent/JPH03170440A/en
Publication of JPH03170440A publication Critical patent/JPH03170440A/en
Pending legal-status Critical Current

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Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00Technologies relating to chemical industry
    • Y02P20/50Improvements relating to the production of bulk chemicals
    • Y02P20/55Design of synthesis routes, e.g. reducing the use of auxiliary or protecting groups

Landscapes

  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

PURPOSE:To protect and deprotect a carboxylic acid, phosphoric acid or sulfonic acid group under a neutral condition without damaging other functional groups by protecting the carboxylic acid, phosphoric acid or sulfonic acid group with a m-methoxybenzyl group or a derivative thereof and subsequently irradiating the protected group with light. CONSTITUTION:The alcohol derivative of a protecting group (e.g. m- methoxybenzyl alcohol) is made to react with the acid chloride of a compound to be protected (e.g. benzoyl chloride) in order to protect a carboxylic acid, phosphoric acid or sulfonic acid group with the m-methoxybenzyl group. As another method, the alkali metal salt of the compound to be protected (e.g. potassium benzoate) may be reacted with the halogenated benzyl derivative of the protecting group. The deprotecting reaction is performed, e.g. by irradiating the protected product with a low pressure, high pressure or superhigh pressure mercury lamp or xenon lamp of 5-450W, etc., as a light source in a solvent such as water-containing acetone in a concentration of the reaction substrate of 0.5-50mM for 10mim to 10 hours.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、種々の有機化合物の製造工程や、写真化学工
程において有用な、カルボン酸、リン酸またはスルホン
酸の保護方法および脱保護方法に関するものである。
Detailed Description of the Invention (Industrial Application Field) The present invention relates to a method for protecting and deprotecting carboxylic acid, phosphoric acid, or sulfonic acid, which is useful in manufacturing processes of various organic compounds and photochemical processes. It is something.

(従来の技術) 有機化合物の官能基の保護・脱保護に関する知見には膨
大なものがあり、J.F.W.マコミー(J.F.W.
Mcomte) &Wプロティクティブ・グループス・
イン・オーガニック・ケミストリー(Protectt
ve Groupsin Organic CheII
listry)プレナムプレス社、T.一.グリーン(
T,W,Green)著 プロティクティブ・グレーブ
ス・イン・オーガニック・シンセシス(Protect
ive Groups in Organic Syn
thesis)ワイリーインターサイエンス出版社等の
成書にカルボン酸、リン酸、スルホン酸を保護する場合
の方法が数多く記載されている。一般にこれらの保護基
(エステル)を除去するには、水酸イオンや水素イオン
による加水分解法を用いる。しかし、分子内に2箇所以
上のエステル部位がある場合、その一方のみを選択的に
開裂させたり、酸・アルカリによる加水分解によって損
なわれるような化合物や官能基が共存する場合には、従
来の酸・アルカリによる加水分解法は適用できないこと
が多い.そのため、いくつかの改良法が開発されている
(Prior Art) There is a vast amount of knowledge regarding the protection and deprotection of functional groups of organic compounds, and J. F. W. McComey (J.F.W.
Mcomte) &W Protective Groups
In Organic Chemistry (Protect)
ve Groupsin Organic CheII
listry) Plenum Press, T. one. green(
Protective Graves in Organic Synthesis (T.W. Green)
ive Groups in Organic Syn
(thesis) Many methods for protecting carboxylic acids, phosphoric acids, and sulfonic acids are described in books such as those published by Wiley Interscience Publishing. Generally, to remove these protecting groups (esters), a hydrolysis method using hydroxyl ions or hydrogen ions is used. However, when there are two or more ester sites in a molecule, only one of them is selectively cleaved, or when compounds or functional groups that are damaged by acid/alkali hydrolysis coexist, conventional Hydrolysis methods using acids and alkalis are often not applicable. Therefore, several improved methods have been developed.

穏和な条件(中性条件)下で他の官能基を損なわずに、
エステル部位を開裂させる方法のひとつとして感光性の
保護基の使用がある。光で感光性の保護基を脱保護する
利点は、光はエネルギー源として無害で扱いやすいこと
が挙げられ、また光で除去できる保護基は数多く報告さ
れており、シンセティク・オーガニ・冫ク・フォトケミ
ストリー(Synthetic Organic Ch
emistry)、357〜423頁、プレナム・プレ
ス社、イスラエル・ジャーナル・ケミストリ−12巻、
1974年、103頁、シンセシス1980年1頁等に
記載されている。カルボン酸またはリン酸に用いた感光
性の保護基としては、O−ニトロベンジル基、0−ニト
ロフェニルアξノ基、p−メトキシフエナシル基等が知
られている.光で除去できる保護基としてよく利用され
ている0−ニトロベンジル基の場合、0−ニトロベンジ
ル基は速いが系内に0−ニトロソベンズアルデヒドが生
戒する。脱保護した化合物にアミノ基がある場合は、こ
れが反応しシッフ塩基を形或するという欠点がある。0
−ニトロフェニルアミノ基は優れた応答性をもつが化合
物への導入が問題点である。また、p−メトキシフェナ
シル基は0−ニトロベンジル基よりも速く脱離するが、
短波長の光を照射することと脱保護中に脱炭酸する危険
があるという問題点がある。このように、従来の光脱保
護法には種々の欠点があり、有機合威に汎用的に使用さ
れるには限界があった。
under mild conditions (neutral conditions) without damaging other functional groups.
One way to cleave the ester moiety is to use a photosensitive protecting group. The advantage of deprotecting photosensitive protecting groups with light is that light is harmless and easy to handle as an energy source, and there are many reports of protecting groups that can be removed with light, including synthetic, organic, chemical, and photoprotective groups. Chemistry (Synthetic Organic Ch.
emistry), pp. 357-423, Plenum Press, Israel Journal Chemistry-Volume 12,
1974, p. 103, Synthesis, 1980, p. 1, etc. As photosensitive protecting groups used for carboxylic acid or phosphoric acid, O-nitrobenzyl group, O-nitrophenylaξno group, p-methoxyphenacyl group, etc. are known. In the case of the 0-nitrobenzyl group, which is often used as a protecting group that can be removed with light, although the 0-nitrobenzyl group is fast, it leaves 0-nitrosobenzaldehyde in the system. If the deprotected compound has an amino group, it has the disadvantage that it reacts to form a Schiff base. 0
Although the -nitrophenylamino group has excellent responsiveness, its introduction into compounds is a problem. Furthermore, the p-methoxyphenacyl group is eliminated faster than the 0-nitrobenzyl group, but
There are problems with irradiation with short wavelength light and the risk of decarboxylation during deprotection. As described above, conventional photodeprotection methods have various drawbacks, and there are limits to their general use in organic synthesis.

(発明が解決しようとする課題) したがって、本発明の目的は中性条件下で他の官能基を
損なうことなく、カルボン酸・リン酸・スルホン酸を保
護・脱保護する方法を提供することにある。
(Problems to be Solved by the Invention) Therefore, the purpose of the present invention is to provide a method for protecting and deprotecting carboxylic acids, phosphoric acids, and sulfonic acids under neutral conditions without damaging other functional groups. be.

(問題を解決するための手段) 本発明の上記の目的は、 (1)  カルボン酸、リン酸またはスルホン酸を有す
る化合物の中の保護すべきカルボン酸、リン酸またはス
ルホン酸の保護基として、m−メトキシベンジル基また
はその誘導体を用いることを特徴とするカルボン酸、リ
ン酸またはスルホン酸の保護方法および (2)m−メトキシベンジル基またはその誘導体で保護
されたカルボン酸、リン酸またはスルホン酸を有する化
合物に光を照射することを特徴とするカルボン酸、リン
酸またはスルホン酸の脱保護方法によって達威された。
(Means for Solving the Problems) The above objects of the present invention are as follows: (1) As a protecting group for carboxylic acid, phosphoric acid or sulfonic acid to be protected in a compound having carboxylic acid, phosphoric acid or sulfonic acid, A method for protecting carboxylic acid, phosphoric acid or sulfonic acid characterized by using m-methoxybenzyl group or its derivative, and (2) carboxylic acid, phosphoric acid or sulfonic acid protected with m-methoxybenzyl group or its derivative This was accomplished by a method for deprotecting carboxylic acids, phosphoric acids, or sulfonic acids, which is characterized by irradiating light onto compounds having the following properties.

本発明において保護基として用いる基はm−メトキシベ
ンジル基またはそのベンゼン核に置換基を有する基であ
る。ここで、置換基としては、アルコキシ基、ハロゲン
原子、アルコキシ力ルボニル基、アルキルカルバモイル
基などである。アルコキシ基、アルコキシカルボニル基
、アルキル力ルバモイル基の炭素数は1〜17が好まし
く、各置換基のアルキル部分は直鎖状、分岐状、環状の
いずれでもよく、また他の置換基が存在してもよい。
The group used as a protecting group in the present invention is an m-methoxybenzyl group or a group having a substituent on its benzene nucleus. Here, examples of the substituent include an alkoxy group, a halogen atom, an alkoxycarbonyl group, an alkylcarbamoyl group, and the like. The number of carbon atoms in the alkoxy group, alkoxycarbonyl group, and alkyl group is preferably 1 to 17, and the alkyl portion of each substituent may be linear, branched, or cyclic, and other substituents may be present. Good too.

本発明の保護基によって保護されるカルボン酸、リン酸
またはスルホン酸を有する化合物には特別な限定はなく
、本発明の保護基は種々の化合物のカルボン酸、 リン酸またはスルホン酸を保護する ことができる. 以下に本発明の保護基で保護された化合物を例示する. PS 1 0 PS−2 0 PS 3 0 PS 4 n PS−5 0 PS 6 0 C忍 PS 7 0 PS 8 0 PS 9 0 IR ν(C=0) 1 735cm MASS M1 325 PS 10 0 PS 11 PS l2 カルボン酸、リン酸またはスルホン酸を持つ化合物のカ
ルボン酸、リン酸、スルホン酸を本発明の保護基で保護
するには、本発明の保護基のアルコール体(例えばm−
メトキシベンジルアルコール)を被保護化合物の酸クロ
ライド(例えば塩化ベンゾイル)と反応させればよい。
There is no particular limitation on the compounds having carboxylic acid, phosphoric acid or sulfonic acid that are protected by the protecting group of the present invention, and the protecting group of the present invention can protect the carboxylic acid, phosphoric acid or sulfonic acid of various compounds. Can be done. Examples of compounds protected with the protecting groups of the present invention are shown below. PS 1 0 PS-2 0 PS 3 0 PS 4 n PS-5 0 PS 6 0 C-nin PS 7 0 PS 8 0 PS 9 0 IR ν (C=0) 1 735cm MASS M1 325 PS 10 0 PS 11 PS l2 In order to protect the carboxylic acid, phosphoric acid, or sulfonic acid of a compound having a carboxylic acid, phosphoric acid, or sulfonic acid with the protecting group of the present invention, the alcohol form of the protecting group of the present invention (for example, m-
Methoxybenzyl alcohol) may be reacted with the acid chloride of the compound to be protected (eg, benzoyl chloride).

また、他の方法として被保護化合物のアルカリ金属塩(
例えば、安息香酸カリウム)と本発明の保護基のハロゲ
ン化ベンジル体(例えば、m−メトキシヘンジルクロラ
イド)を反応させる方法がある。
In addition, as another method, an alkali metal salt of the protected compound (
For example, there is a method of reacting potassium benzoate) with a halogenated benzyl compound of the protecting group of the present invention (for example, m-methoxyhenzyl chloride).

次に光照射によるm−メトキシベンジル基又はその誘導
体の脱保護方法について説明する.光照射による脱保護
を効率よく行うには、反応条件の選択は大変重要である
。光源・溶媒・濃度・反応時間の順に説明する。光源の
種類としては好ましくは低圧水銀ランプ、高圧水銀ラン
プ、超高圧水銀ランプ、キセノンランプ、水銀キセノン
ランプが挙げられる。光源の出力としては1〜1kW、
好ましくは5〜450Wである。溶媒として好ましくは
含水アセトントリル、含水テトラヒドロフラン、含水ジ
オキサンが挙げられる。反応基質の濃度は0.  1〜
300mMの範囲がよく、好ましくは0.5〜50mM
の範囲である。反応時間は好ましくは10分間から10
時間の範囲である.有機化合物の分子内に2箇所以上の
エステル部位がある場合、その一方を選択的に開裂させ
たり、また酸やアルカリによる加水分解により損なわれ
るような官能基が分子内に存在する場合に、本発明に従
ってm−メトキシベンジル誘導体をカルボン酸、リン酸
、スルホン酸の保Wt基として化合物に導入すれば、光
を照射することで導入したエステル部位の脱保護を中性
条件下で達戚できる。従って本発明の保護、脱保護方法
は種々の化合物の合戒に有用である。
Next, a method for deprotecting the m-methoxybenzyl group or its derivatives by light irradiation will be explained. Selection of reaction conditions is very important for efficient deprotection by light irradiation. The light source, solvent, concentration, and reaction time will be explained in this order. Preferred types of light sources include low-pressure mercury lamps, high-pressure mercury lamps, ultra-high-pressure mercury lamps, xenon lamps, and mercury-xenon lamps. The output of the light source is 1 to 1 kW,
Preferably it is 5-450W. Preferred solvents include aqueous acetonetrile, aqueous tetrahydrofuran, and aqueous dioxane. The concentration of the reaction substrate is 0. 1~
A range of 300mM is good, preferably 0.5-50mM
is within the range of The reaction time is preferably 10 minutes to 10 minutes.
It is a range of time. When there are two or more ester sites in the molecule of an organic compound, one of them is selectively cleaved, or when there is a functional group in the molecule that can be damaged by acid or alkali hydrolysis, this According to the invention, if m-methoxybenzyl derivatives are introduced into a compound as a Wt-retaining group for carboxylic acid, phosphoric acid, or sulfonic acid, deprotection of the introduced ester moiety can be achieved under neutral conditions by irradiation with light. Therefore, the protection and deprotection methods of the present invention are useful for the synthesis of various compounds.

実施例l く安息香酸のカルボン酸の保護(PS−1の場合)〉テ
トラヒドロフラン200成にm−メトキシベンジルアル
コール1.38g (0.01モル)およびトリエチル
アξン1.Olg (0.01モル)を溶解し、その溶
液に塩化ベンゾイル1.  22g(0.01モル)を
加え、室温で3時間攪拌した。
Example 1 Protection of carboxylic acid of benzoic acid (in the case of PS-1)> 1.38 g (0.01 mol) of m-methoxybenzyl alcohol and 1.3 g (0.01 mol) of m-methoxybenzyl alcohol and 1. Olg (0.01 mol) and added 1.0 mol of benzoyl chloride to the solution. 22 g (0.01 mol) was added and stirred at room temperature for 3 hours.

溶媒を減圧留去したのち塩化メチレン200−を加え、
水200dで2回洗浄する。有機層を硫酸ナトリウムで
乾燥後、溶媒を減圧留去して得た油状物をシリカゲルカ
ラムクロマトグラフィー(溶出液n−ヘキサン:酢酸エ
チル−4:l)で精製した油状物2.20g(収率91
%)を得た。
After distilling off the solvent under reduced pressure, 200% of methylene chloride was added,
Wash twice with 200 d of water. After drying the organic layer over sodium sulfate, the solvent was distilled off under reduced pressure, and the resulting oil was purified by silica gel column chromatography (eluent: n-hexane:ethyl acetate-4:l) to give 2.20 g of an oil (yield: 91
%) was obtained.

I R   v C=0  1720CI1−’’HN
旧(COC f 3)  63.67(S.311.O
CH.)、5.38(S.2H.CHzO)、6.82
−8.15(m.9H,φ)MASS  M”  24
2 リン酸およびスルホン酸の場合も同様に合威することが
できる。
I R v C=0 1720CI1-''HN
Old (COC f 3) 63.67 (S.311.O
CH. ), 5.38 (S.2H.CHzO), 6.82
-8.15 (m.9H, φ) MASS M” 24
2 Phosphoric acid and sulfonic acid can be combined in the same manner.

実施例2 〈脱保護〉 m−メトキシベンジル基等で保護された各種化合物の2
mMのアセトニトリル/リン酸バッファ一(pH7.0
)(1 : 1)の溶液を石英セルに入れ、そこから5
cm離したところに5W低圧水銀ランプを置いて照射し
た.出発化合物の減少速度定数Kを高速液体クロマトグ
ラフィーにより測定した, 0.0.を245n+mで
吸光度として、相対反応効率をK/(1−10°1・)
により求め、脱保護の効率を評価した.結果を表1に示
す.(比較例) O−ニトロベンジルベンゾエート2mMのアセトニトリ
ル/リン酸バッファ一(pH7.0)(l:1)の溶液
を実施例と同様に0−ニトロベンジルベンゾエートの減
少速度定数Kを測定した。
Example 2 <Deprotection> 2 of various compounds protected with m-methoxybenzyl group etc.
mM acetonitrile/phosphate buffer (pH 7.0)
) (1:1) solution is put into a quartz cell, and from there 5
A 5W low-pressure mercury lamp was placed at a distance of cm and irradiated. The reduction rate constant K of the starting compound was determined by high performance liquid chromatography, 0.0. is the absorbance at 245n+m, and the relative reaction efficiency is K/(1-10°1・)
The efficiency of deprotection was evaluated. The results are shown in Table 1. (Comparative Example) A solution of 2 mM of O-nitrobenzyl benzoate in acetonitrile/phosphate buffer (pH 7.0) (1:1) was used to measure the reduction rate constant K of O-nitrobenzyl benzoate in the same manner as in the example.

結果を表1に示す. m−メトキシベンジル基およびその誘導体は感光性の保
護基としてよく用いられる0−ニトロベンジル基よりも
反応効率がよく脱保護を迅速に行うことができる。
The results are shown in Table 1. The m-methoxybenzyl group and its derivatives have higher reaction efficiency and can be deprotected more quickly than the 0-nitrobenzyl group, which is often used as a photosensitive protecting group.

実施例3 tert−ブトキシ力ルポニルセリンーm−メトキシヘ
ンジルエステル1.  5g (4.  6mmol)
 ヲテトラヒドフラン/リン酸バッファ一(pH7.0
)(5:l)loomに溶解した溶液を内部照射型の光
反応容器に入れ、室温、窒素雰囲気下、石英ジャケノト
に入れた450Wの高圧水銀ランプを3時間照射した。
Example 3 tert-butoxyluponylserine-m-methoxyhenzyl ester 1. 5g (4.6mmol)
Wotetrahydrofuran/phosphate buffer (pH 7.0)
) (5:l) room was placed in an internal irradiation type photoreaction container, and irradiated for 3 hours with a 450 W high-pressure mercury lamp placed in a quartz jacket at room temperature under a nitrogen atmosphere.

溶媒を減圧留去して、シリクロマトグラフィー(クロロ
ホルム/メタノール75:25)で精製し、ter t
−ブトキシカルボニルセリン0.76g(収率75%)
で得た。
The solvent was distilled off under reduced pressure, purified by silichromatography (chloroform/methanol 75:25), and tert
-Butoxycarbonylserine 0.76g (yield 75%)
I got it.

(発明の効果) 本発明により中性条件下で他の官能基を損なうことなく
、カルポン酸・リン酸・スルホン酸の保護・脱保護する
ことができる。
(Effects of the Invention) According to the present invention, carboxylic acid, phosphoric acid, and sulfonic acid can be protected and deprotected under neutral conditions without damaging other functional groups.

Claims (2)

【特許請求の範囲】[Claims] (1)カルボン酸、リン酸またはスルホン酸を有する化
合物の中の保護すべきカルボン酸、リン酸またはスルホ
ン酸の保護基として、m−メトキシベンジル基またはそ
の誘導体を用いることを特徴とするカルボン酸、リン酸
またはスルホン酸の保護方法。
(1) A carboxylic acid characterized by using an m-methoxybenzyl group or a derivative thereof as a protecting group for the carboxylic acid, phosphoric acid, or sulfonic acid to be protected in a compound having a carboxylic acid, phosphoric acid, or sulfonic acid. , phosphoric or sulfonic acid protection methods.
(2)m−メトキシベンジル基またはその誘導体で保護
されたカルボン酸、リン酸またはスルホン酸を有する化
合物に光を照射することを特徴とするカルボン酸、リン
酸またはスルホン酸の脱保護方法。
(2) A method for deprotecting carboxylic acid, phosphoric acid, or sulfonic acid, which comprises irradiating a compound having carboxylic acid, phosphoric acid, or sulfonic acid protected with an m-methoxybenzyl group or a derivative thereof.
JP1311556A 1989-11-30 1989-11-30 Method for protecting and deprotecting carboxylic acid, phosphoric acid or sulfonic acid Pending JPH03170440A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1311556A JPH03170440A (en) 1989-11-30 1989-11-30 Method for protecting and deprotecting carboxylic acid, phosphoric acid or sulfonic acid

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1311556A JPH03170440A (en) 1989-11-30 1989-11-30 Method for protecting and deprotecting carboxylic acid, phosphoric acid or sulfonic acid

Publications (1)

Publication Number Publication Date
JPH03170440A true JPH03170440A (en) 1991-07-24

Family

ID=18018656

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1311556A Pending JPH03170440A (en) 1989-11-30 1989-11-30 Method for protecting and deprotecting carboxylic acid, phosphoric acid or sulfonic acid

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5597839A (en) * 1990-10-12 1997-01-28 Centre International De Recherches Dermatologiques Galderma (Cird Galderma) Di(aromatic) compounds and their use in human and veterinary medicine and in cosmetics

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5597839A (en) * 1990-10-12 1997-01-28 Centre International De Recherches Dermatologiques Galderma (Cird Galderma) Di(aromatic) compounds and their use in human and veterinary medicine and in cosmetics

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