JPH0299953A - Pattern forming material - Google Patents
Pattern forming materialInfo
- Publication number
- JPH0299953A JPH0299953A JP25240988A JP25240988A JPH0299953A JP H0299953 A JPH0299953 A JP H0299953A JP 25240988 A JP25240988 A JP 25240988A JP 25240988 A JP25240988 A JP 25240988A JP H0299953 A JPH0299953 A JP H0299953A
- Authority
- JP
- Japan
- Prior art keywords
- pattern forming
- forming material
- resin
- light
- onium salt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 19
- 239000011347 resin Substances 0.000 claims abstract description 12
- 229920005989 resin Polymers 0.000 claims abstract description 12
- 150000003839 salts Chemical class 0.000 claims abstract description 8
- 239000012954 diazonium Substances 0.000 claims abstract description 6
- 150000001989 diazonium salts Chemical class 0.000 claims abstract description 6
- -1 poly(methyl methacrylate) Polymers 0.000 claims description 12
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 5
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 3
- 229920002454 poly(glycidyl methacrylate) polymer Polymers 0.000 claims description 2
- 229920000182 polyphenyl methacrylate Polymers 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 239000002253 acid Substances 0.000 abstract description 3
- 238000006303 photolysis reaction Methods 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 7
- 230000018109 developmental process Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000015843 photosynthesis, light reaction Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は半導体素子を製造するときに用いられるパター
ン形成材料、具体的にはレジスト材料に２ ／＼
係シ、特に露光エネルギー源としてたとえば１９３ｎｍ
のすなわちＡｒＦエキシマ・レーザー、遠紫外線光等を
用いてパターン形成する際のパターン形成材料に関する
。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to pattern forming materials, specifically resist materials, used in the manufacture of semiconductor devices, and in particular to 2/\\\\\\\\\\\2, which are used as an exposure energy source for example, 193 nm.
That is, it relates to a pattern forming material when forming a pattern using an ArF excimer laser, deep ultraviolet light, or the like.
従来の技術
高解像のパターン形成が可能なことで、短波長光源を用
いた１９３ｎｍのＡ ｒ Ｆエキシマレーザ光によるリ
ソグラフィが挙げられる。Conventional Techniques Lithography using a 193 nm A r F excimer laser beam using a short wavelength light source is an example of a technique that enables high-resolution pattern formation.
ところが、このリングラフィに用いるレジストとしては
、通常のポジ型の遠紫外線レジスト（ＭＰ２４００；シ
ブレイなど）がこの光に吸収が大きすぎて使用がむずか
しいために、たとえば透明性の高いＰＭＭＡ（ポリメチ
ルメタアクリレート）が考えられる。However, as the resist used for this phosphorography, the usual positive deep ultraviolet resist (MP2400; Sibley, etc.) absorbs this light too much and is difficult to use. acrylate).
第２図を用いて従来のＰＭＭＡを用いたレジストパター
ン形成方法を示す。基板１上にＰＭＭＡを回転塗布し、
厚さ１．５μｍのレジスト膜を得る（第２図ａ）。つぎ
に１９３ｎｍのＡ ｒ Ｆ ｘキシマレーザー光４によ
り選択的にレジスト３を露光４する（第２図ｂ）。そし
て、最後に通常の現像処理を旋してレジストパターン３
ａが得られた（第２図Ｃ）。A conventional method of forming a resist pattern using PMMA is shown in FIG. Spin coat PMMA on the substrate 1,
A resist film with a thickness of 1.5 μm is obtained (FIG. 2a). Next, the resist 3 is selectively exposed 4 to 193 nm ArFx xima laser light 4 (FIG. 2b). Finally, the resist pattern 3 is processed through normal development processing.
A was obtained (Fig. 2C).
発明が解決しようとする課題
ところが、ＰＭＭＡはＡｒＦに対して感度が５１／−程
度と大変低く、又、パターン３ａもその形状は良くなく
劣化した０、４μｍパターンだった。However, the problem to be solved by the invention is that PMMA has a very low sensitivity to ArF of about 51/-, and the pattern 3a is also a degraded 0.4 μm pattern whose shape is not good.
本発明は、このような従来のＡｒＦエキシマレーザに対
するパターン形成材料の感度・解像性を向上させること
を目的とする。The present invention aims to improve the sensitivity and resolution of pattern forming materials for such conventional ArF excimer lasers.
課題を解決するだめの手段
本発明は従来のパターン形状不良を解決するために、１
９３ｎｍ付近において透明性の高い樹脂とオニウム塩又
はジアゾニウム塩より成ることを特徴とするパターン形
成材料を提供するものである。Means for Solving the Problems In order to solve the conventional pattern shape defects, the present invention has the following features:
The present invention provides a pattern forming material characterized by comprising a resin having high transparency around 93 nm and an onium salt or a diazonium salt.
作 用
本発明の如きオニウム塩又はジアゾニウム塩を１９３ｎ
ｍ付近において透明性の高い樹脂に混入すれば、樹脂の
光に反応する感度とパターン形状が向上することを本発
明者らは見出した、即ち、オニウム塩又はジアゾニウム
塩が光分解して酸を発生し、この酸が樹脂の光に対する
挙動を良好なものとしたと考えられる。即ち、光分解性
の樹脂に対してはこれをよシ光分解促進させ、光架橋性
の樹脂に対してはこれをよシ架橋促進させる。Effect: When the onium salt or diazonium salt of the present invention is added to 193n
The present inventors have discovered that when mixed into a highly transparent resin near m, the sensitivity and pattern shape of the resin in response to light improve. It is thought that this acid caused the resin to behave better against light. That is, for photodegradable resins, the photolysis is promoted, and for photocrosslinkable resins, the crosslinking is promoted.
実施例 本発明に係るオニウム塩としては、 などが挙げられるがこれらの限シではない。Example The onium salt according to the present invention includes: Examples include, but are not limited to these.
本発明に係る１９３ｎｍ付近において透明性の高い樹脂
としては、ポリ（メチルメタクリレート）。The resin having high transparency around 193 nm according to the present invention is poly(methyl methacrylate).
ポリジメチルグルタルイミド（ＰＭＧＩ）、ポリ（フェ
ニルメタアクリレート）、ポリ（グリシジルメタクリレ
ート）のいずれか、又は、混合体などが挙げられるが、
これらの限シではない。Examples include polydimethylglutarimide (PMGI), poly(phenyl methacrylate), poly(glycidyl methacrylate), or a mixture thereof.
These are not the only ones.
本発明に係るジアゾニウム塩としては、６ ・・ ＣＨ３ ６へ−〉 などが挙げられるが、これらに限らない。The diazonium salt according to the present invention includes 6... CH3 Go to 6-> Examples include, but are not limited to, these.
他に以下の化合物が一例として挙げられる。Other examples include the following compounds.
Ｃ４Ｈ９
Ｎ（ＣＨ３）２
１Ｃ３Ｈ８
本発明のパターン形成材料を１９３ ｎｍ （Ｄ Ａｒ
Ｆエキシマ・レーザー露光に用いることにょシ、形状の
良い超微細レジストパターンを感度良く形成することが
できる。C4H9 N(CH3)2 1C3H8 The pattern forming material of the present invention was 193 nm (D Ar
When used in F excimer laser exposure, ultra-fine resist patterns with good shapes can be formed with high sensitivity.
以下、実施例を述べる。Examples will be described below.
以下の組成から成るパターン形成材料を調整した。A pattern forming material having the following composition was prepared.
良い微細パターン（０，３μｍ）であった。感度も４Ｑ
ｏｍ■／ｃｆＩと良好であった。It had a good fine pattern (0.3 μm). Sensitivity is also 4Q
It was good with om■/cfI.
なお、以上のパターン形成材料の代わりに以下の本発明
のパターン形成材料を用いても同様の良好外結果が得ら
れた。もちろん本発明はこれらに限定されることはない
。Note that similar results were obtained even when the following pattern forming materials of the present invention were used instead of the above pattern forming materials. Of course, the present invention is not limited to these.
この本発明のパターン形成材料を用いたレジストパター
ン形成方法を第１図で説明する。半導体等の基板１上に
本発明のパターン形成材料２を回転塗布し、厚さ１．６
μｍのレジスト膜を得る（第１図ａ）。つぎに１９３ｎ
ｍのＡｒＦエキシマ・レザー光４によシ選択的にレジス
ト２をノくルス露光する（第１図ｂ）。そして、最後に
通常の現像処理を施してレジストパターン２ａが得られ
た（第１図Ｃ）。なお、このときレジストパターン２ａ
はマスク設計通シに精度よくコントラストの発明の効果
本発明によれば、特にＤＵＶ光やエキシマレーザ−光に
よる露光・現像に際してのレジストパターン形成が高コ
ントラスト、高解像、高精度で行うことかでき、結果と
して半導体素子の微細化。A resist pattern forming method using the pattern forming material of the present invention will be explained with reference to FIG. The pattern forming material 2 of the present invention is spin-coated onto a substrate 1 such as a semiconductor to a thickness of 1.6 mm.
A resist film of μm thickness is obtained (FIG. 1a). Next 193n
The resist 2 is selectively exposed to ArF excimer laser light 4 of m (FIG. 1b). Finally, a normal development process was performed to obtain a resist pattern 2a (FIG. 1C). Note that at this time, the resist pattern 2a
According to the present invention, resist pattern formation can be performed with high contrast, high resolution, and high precision, especially during exposure and development with DUV light or excimer laser light. As a result, semiconductor devices can be miniaturized.
歩留まシ向上につながり、工業的価値が高い。It leads to improved yields and has high industrial value.
第１図は本発明の一実施例のパターン形成材料を用いた
パターン形成方法の工程断面図、第２図は従来のパター
ン形成方法の工程断面図である。
１・・・・・・基板、２・・・・・・本発明のパターン
形成材料、４・・・・・・エキシマレーザ−光、６・・
・・・・マスク、３ａ・・・・・・パターン。
代理人の氏名 弁理士 粟 野 重 孝 ほか１名釈
ｔ＞ｓ
セ １FIG. 1 is a process sectional view of a pattern forming method using a pattern forming material according to an embodiment of the present invention, and FIG. 2 is a process sectional view of a conventional pattern forming method. DESCRIPTION OF SYMBOLS 1...Substrate, 2...Pattern forming material of the present invention, 4...Excimer laser light, 6...
...Mask, 3a...Pattern. Name of agent: Patent attorney Shigetaka Awano and 1 other person
Claims (3)
ウム塩より成ることを特徴とするパターン形成材料。(1) A pattern forming material characterized by being made of a resin with high transparency around 193 nm and an onium salt.
リ（メチルメタクリレート）、ポリジメチルグルタルイ
ミド、ポリ（フェニルメタクリレート）、ポリ（グリシ
ジルメタクリレート）のいずれか、又は混合体であるこ
とを特徴とする特許請求の範囲第１項に記載のパターン
形成材料。(2) A patent characterized in that the highly transparent resin at around 193 nm is poly(methyl methacrylate), polydimethylglutarimide, poly(phenyl methacrylate), poly(glycidyl methacrylate), or a mixture thereof. A pattern forming material according to claim 1.
を特徴とする特許請求の範囲第１項に記載のパターン形
成材料。(3) The pattern forming material according to claim 1, which is a diazonium salt instead of an onium salt.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25240988A JPH0299953A (en) | 1988-10-06 | 1988-10-06 | Pattern forming material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25240988A JPH0299953A (en) | 1988-10-06 | 1988-10-06 | Pattern forming material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0299953A true JPH0299953A (en) | 1990-04-11 |
Family
ID=17236943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25240988A Pending JPH0299953A (en) | 1988-10-06 | 1988-10-06 | Pattern forming material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0299953A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5610443A (en) * | 1994-09-08 | 1997-03-11 | General Instrument Of Taiwan, Ltd. | Method for encapsulating a semiconductor utilizing an epoxy resin and an onium salt compound |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57195250A (en) * | 1981-05-13 | 1982-11-30 | Hoechst Ag | Manufacture of printing plate |
| JPS58179836A (en) * | 1982-04-14 | 1983-10-21 | Sanyo Electric Co Ltd | Positive type photoresist |
| JPS63172153A (en) * | 1986-12-23 | 1988-07-15 | ヘキスト・アクチエンゲゼルシヤフト | Photosensitive composition and photosensitive recording material containing the same |
| JPS63250642A (en) * | 1987-03-30 | 1988-10-18 | マイクロサイ，インコーポレイテッド | Photoresist composition |
| JPS6435433A (en) * | 1987-07-01 | 1989-02-06 | Basf Ag | Radiation sensitive mixture for photosensitive layer forming material |
-
1988
- 1988-10-06 JP JP25240988A patent/JPH0299953A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57195250A (en) * | 1981-05-13 | 1982-11-30 | Hoechst Ag | Manufacture of printing plate |
| JPS58179836A (en) * | 1982-04-14 | 1983-10-21 | Sanyo Electric Co Ltd | Positive type photoresist |
| JPS63172153A (en) * | 1986-12-23 | 1988-07-15 | ヘキスト・アクチエンゲゼルシヤフト | Photosensitive composition and photosensitive recording material containing the same |
| JPS63250642A (en) * | 1987-03-30 | 1988-10-18 | マイクロサイ，インコーポレイテッド | Photoresist composition |
| JPS6435433A (en) * | 1987-07-01 | 1989-02-06 | Basf Ag | Radiation sensitive mixture for photosensitive layer forming material |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5610443A (en) * | 1994-09-08 | 1997-03-11 | General Instrument Of Taiwan, Ltd. | Method for encapsulating a semiconductor utilizing an epoxy resin and an onium salt compound |
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