JPH029460B2 - - Google Patents
Info
- Publication number
- JPH029460B2 JPH029460B2 JP58171234A JP17123483A JPH029460B2 JP H029460 B2 JPH029460 B2 JP H029460B2 JP 58171234 A JP58171234 A JP 58171234A JP 17123483 A JP17123483 A JP 17123483A JP H029460 B2 JPH029460 B2 JP H029460B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- region
- emitter region
- thyristor
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 5
- 230000007423 decrease Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 230000035945 sensitivity Effects 0.000 description 6
- 206010034972 Photosensitivity reaction Diseases 0.000 description 5
- 230000036211 photosensitivity Effects 0.000 description 5
- 230000006378 damage Effects 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 206010034960 Photophobia Diseases 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
- H10F30/263—Photothyristors
Landscapes
- Thyristors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58171234A JPS6064469A (ja) | 1983-09-19 | 1983-09-19 | 光サイリスタ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58171234A JPS6064469A (ja) | 1983-09-19 | 1983-09-19 | 光サイリスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6064469A JPS6064469A (ja) | 1985-04-13 |
JPH029460B2 true JPH029460B2 (sv) | 1990-03-02 |
Family
ID=15919528
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58171234A Granted JPS6064469A (ja) | 1983-09-19 | 1983-09-19 | 光サイリスタ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6064469A (sv) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5229189A (en) * | 1975-08-29 | 1977-03-04 | Siemens Ag | Optical controlled thyristor |
JPS53125783A (en) * | 1977-04-06 | 1978-11-02 | Siemens Ag | Light controlled thyristor |
JPS5823751A (ja) * | 1981-07-29 | 1983-02-12 | ラルストン・ピユリナ・カンパニ− | 濃密な弾力のあるソフトな湿潤ペツトフ−ド製品およびその製造法 |
JPS5856463A (ja) * | 1981-09-30 | 1983-04-04 | Toshiba Corp | 光付勢半導装置 |
-
1983
- 1983-09-19 JP JP58171234A patent/JPS6064469A/ja active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5229189A (en) * | 1975-08-29 | 1977-03-04 | Siemens Ag | Optical controlled thyristor |
JPS53125783A (en) * | 1977-04-06 | 1978-11-02 | Siemens Ag | Light controlled thyristor |
JPS5823751A (ja) * | 1981-07-29 | 1983-02-12 | ラルストン・ピユリナ・カンパニ− | 濃密な弾力のあるソフトな湿潤ペツトフ−ド製品およびその製造法 |
JPS5856463A (ja) * | 1981-09-30 | 1983-04-04 | Toshiba Corp | 光付勢半導装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS6064469A (ja) | 1985-04-13 |
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