JPH0291979A - Planar optical semiconductor device - Google Patents
Planar optical semiconductor deviceInfo
- Publication number
- JPH0291979A JPH0291979A JP63245254A JP24525488A JPH0291979A JP H0291979 A JPH0291979 A JP H0291979A JP 63245254 A JP63245254 A JP 63245254A JP 24525488 A JP24525488 A JP 24525488A JP H0291979 A JPH0291979 A JP H0291979A
- Authority
- JP
- Japan
- Prior art keywords
- light
- region
- substrate
- type
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Landscapes
- Photovoltaic Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は光論理回路などに用いられる光半導体装置に
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an optical semiconductor device used in optical logic circuits and the like.
従来のＧａＡｓ基板２８を用いた面形光半導体装置とし
て第２図に断面図で示すような光半導体装置がある。基
板表面から入射した光はＧ ａ Ａ ｓ層２９により吸
収され、これＫよ）電流電圧特性が大きく変化し、光に
よるスイッチング動作を行なう事ができる（ジャーナル
・オブ・アプライド・フィジイックス（Ａｐｐｌ 、Ｐ
ｈｙｓ、Ｌｅｔｔ、） １９８６年、５９巻、５９６ペ
ージ）。この光半導体装置を多数集積化する事により、
光論理回路を構成する事ができる。As a conventional planar optical semiconductor device using a GaAs substrate 28, there is an optical semiconductor device as shown in a cross-sectional view in FIG. The light incident from the substrate surface is absorbed by the GaAs layer 29, and the current-voltage characteristics change significantly, making it possible to perform a switching operation by light (Journal of Applied Physics (Appl. P
hys, Lett, ) 1986, vol. 59, p. 596). By integrating a large number of these optical semiconductor devices,
Optical logic circuits can be constructed.
しかしながら、ＧａＡｓ基板に格子整合するＡＩＧ ａ
Ａ ｓ系半導体材料の禁制帯幅はＧ ａ Ａ ｓ基板
の禁制帯幅に比べて広くその波長の光はＧ ａ Ａ ｓ
基板により吸収されてしまうから、ＧａＡｓ基板２８の
裏面方向からの光入出力が不可能である。したがって、
第２図の構造を基本として面形光デバイスを作るために
は、全て基板表面から光入出力を行なうか、ＧａＡｓ基
板を除去しなければならず、多層の集積化した光論理回
路を構成する事がむずかしい。従来構造の面形光半導体
装置にはこのような欠点があった。However, AIG a that is lattice matched to the GaAs substrate
The forbidden band width of the As-based semiconductor material is wider than that of the Ga As substrate, and light of that wavelength is Ga As.
Since the light is absorbed by the substrate, it is impossible to input and output light from the back side of the GaAs substrate 28. therefore,
In order to create a planar optical device based on the structure shown in Figure 2, it is necessary to perform all optical input/output from the substrate surface or to remove the GaAs substrate, thereby constructing a multilayer integrated optical logic circuit. Things are difficult. The conventional planar optical semiconductor device has such drawbacks.
前述のａ題を解決するために本発明が提供する手段は、
ＧａＡｓ基板を有し、前記Ｇ ａ Ａ ｓ基板上に結晶
成長した少なくとも１つ以上のＡｌｘＧａ １−ＸＡＳ
（０≦Ｘ≦１）量子障壁層とＩｎ、Ｇａ １−ｙＡｓ
（０＜ｙ≦１）歪量子井戸層とからなる受光領域と、少
なくとも１つ以上のＡＪｕＧａｐ−ｕＡｓ （０≦Ｕ≦
１）量子障壁層とＩｎｖＧａ １−ｖＡｓ （０＜ ｖ
≦１）歪量子井戸層とからなる発光領域とを有し、前記
Ｇ ａ Ａ ｓ基板裏面に光入力部を有し、前記受光領
域及び発光領域の禁制帯幅が前記Ｇ ａ Ａ ｓ基板の
禁制帯幅より狭く、前記光入力部から入射した光を前記
受光領域で吸収し、前記発光領域の発光を前記Ｕ ａ
Ａ ｓ基板に垂直な方向から取り出すことを特徴とする
。The means provided by the present invention to solve the above-mentioned problem a are as follows:
At least one or more AlxGa 1-XAS having a GaAs substrate and crystal grown on the GaAs substrate
(0≦X≦1) quantum barrier layer and In, Ga 1-yAs
(0<y≦1) a light-receiving region consisting of a strained quantum well layer, and at least one or more AJuGap-uAs (0≦U≦
1) Quantum barrier layer and InvGa 1-vAs (0< v
≦1) a light-emitting region consisting of a strained quantum well layer, a light input section on the back surface of the GaAs substrate, and a forbidden band width of the light-receiving region and the light-emitting region being the same as that of the GaAs substrate. Narrower than the forbidden band width, the light incident from the light input section is absorbed by the light receiving region, and the light emitted from the light emitting region is absorbed by the U a
It is characterized by being taken out in a direction perpendicular to the As substrate.
上述の本発明の光半導体装置ではＧ ａ Ａ ｓ基板と
し、ＩｎｙＧａｌ−ｙＡｓ （０≦ｙ≦１）を量子井戸
層に用いた歪量子井戸構造となっているから、格子不整
合による結晶の劣化をまねく事なく、歪量子井戸層の発
光受光波長を長くする事ができる。Ｇ ａ Ａ ｓの禁
制帯幅に比べ発光波長が長いからこの光は、Ｇ ａ Ａ
ｓ基板の吸収を受けず基板を透過する事ができる。し
たがって、本発明の構造では、基板を除去する事なく、
基板裏面方向から光の入出力を行なう事ができる。The above-described optical semiconductor device of the present invention uses a GaAs substrate and has a strained quantum well structure using InyGal-yAs (0≦y≦1) as a quantum well layer, so crystal deterioration due to lattice mismatch is avoided. The wavelength of light emitted and received by the strained quantum well layer can be increased without causing any problems. Since the emission wavelength is longer than the forbidden band width of G a A s, this light is
It can pass through the substrate without being absorbed by the s-substrate. Therefore, in the structure of the present invention, without removing the substrate,
Light can be input and output from the back side of the board.
次に図面を参照して本発明の実施例について説明する。 Next, embodiments of the present invention will be described with reference to the drawings.
第１図は本発明の一実施例を示す断面図である。FIG. 1 is a sectional view showing one embodiment of the present invention.
本実施例は、ｎ形であるＧ ａ Ａ ｓ基板１０上にｎ
形）Ｊ ６，４Ｇａ ６，６Ａｓからなるｎ形りラッド
層１１（厚さ１μｍ）、Ｇ ａ Ａ ｓよりなる量子障
壁層（厚さ２０Ａ）１２．１４．１６とＩｎ ６．３５
ＧａＯ，６５Ａｓからまる歪量子井戸層（厚さ４０人）
１３．１５とからなる受光領域（長さ１００μｆｆ１）
１７及び発光領域（長さ２５０μｆｆ１）１８、ｐ形Ａ
１０．４Ｇａ（１，６Ａｓからなるｐ形りラッド層１９
．ｐ形Ｇ ａ Ａ ｓからなるキャップ層２０とを分子
線エピタキシー法により結晶成長したのち、蒸着により
ｐ電極２１．ｎ電極２２を形成し、さらにエツチングに
より、光入力部２３．電極分離領域２４．４５°反射ミ
ラー２５、共振器ミラー２６゜２７を形成した。In this embodiment, n
n-type rad layer 11 (thickness 1 μm) made of J 6,4 Ga 6,6 As, quantum barrier layer (thickness 20 A) 12, 14, 16 made of Ga As, and In 6,35.
Strained quantum well layer consisting of GaO and 65As (40 layers thick)
13. Light receiving area consisting of 15 (length 100μff1)
17 and light emitting region (length 250 μff1) 18, p type A
A p-type rad layer 19 made of 10.4Ga (1,6As)
．． After crystal growth of a cap layer 20 made of p-type GaAs by molecular beam epitaxy, a p-electrode 21. is formed by vapor deposition. The n-electrode 22 is formed and further etched to form the light input section 23. Electrode separation regions 24, 45° reflection mirrors 25, and resonator mirrors 26° and 27 were formed.
発光領域１８からの発光波長は１μｍであシ、外部から
の光入力がない場合の電流注入発光特性は、受光領域１
７に電流が注入されないから、双安定し、−サとなる。The wavelength of light emitted from the light emitting region 18 is 1 μm, and the current injection light emission characteristics when there is no external light input are as follows:
Since no current is injected into 7, it is bistable and becomes -sa.
発光領域１８からの出射光は、４５°反射ミラー２５に
よりＱ Ｂ Ａ ｓ基板１０の表面から垂直な方向に出
射する。Ｇ ａ Ａ ｓ基板１０の裏側から波長１μｍ
の元を元入力部２３に照射すると、元はＧ ａ Ａ ｓ
基板１０を透過して受光領域１７で吸収され、双安定動
作を変化させる。これによ、り、ＧａＡｓ基板１０の裏
面から元を入射させる事によＦ）、ＧａＡｓ基板１０表
面からの出射″ｙｔ、をスイッチする事ができた。また
、この光半導体装置を２つ重ね、下側の出力光を上側の
光入力部に入射させる事により、基板に垂直な方向の信
号伝達を行なう事ができた。The light emitted from the light emitting region 18 is emitted by the 45° reflection mirror 25 in a direction perpendicular to the surface of the Q BAs substrate 10 . Wavelength 1 μm from the back side of the GaAs substrate 10
When the source of is irradiated to the source input section 23, the source is G a A s
The light passes through the substrate 10 and is absorbed in the light receiving region 17, changing the bistable operation. As a result, it was possible to switch F) and output ``yt'' from the front surface of the GaAs substrate 10 by inputting the source from the back surface of the GaAs substrate 10. In addition, two of these optical semiconductor devices were stacked one on top of the other. By inputting the output light from the lower side into the optical input section at the upper side, it was possible to transmit signals in the direction perpendicular to the substrate.
この光半導体装置を集積化する事により、多層の光論理
回路を構成する事ができる。By integrating this optical semiconductor device, a multilayer optical logic circuit can be constructed.
上述のように本発明によ、９ＧａＡｓ基板を用いて、基
板の裏側から光入力を行なう華ができる。また、本発明
の構造では基板に垂直な方向に入出力を行なえるから集
積化が容易であシ、多層の光論理ｌ路を構成する事が可
能となった。また、（ｊａＡｓ電子デバイスと集積化す
る事により、高密度な光電気集積回路が容易に作製でき
るようになった。As described above, according to the present invention, a 9GaAs substrate is used to create a structure in which light is input from the back side of the substrate. Furthermore, since the structure of the present invention allows input/output to be performed in a direction perpendicular to the substrate, integration is easy, and a multilayer optical logic path can be constructed. Furthermore, by integrating with jaAs electronic devices, high-density optoelectronic integrated circuits can now be easily produced.
第１図は本発明の一実施例を不す断面図、第２図は従来
の面形光半導体装置の断面図である。
ｌ Ｑ−−・ＧａＡｓ基板、１１・ ｎ形りクッド、１
２゜１４．１６・・・量子障壁層、１３．１５・・・歪
量子井戸Ｊ−１１７・・・受光領域、１８・・・発光領
域、１９・・・ｐ形りラッド層、２０・・・キャップ層
、２１・・・ｐ電極、２２・・・ｎ電極、２３・・・光
入力部、２４・・・電極分離領域、２５°°°４５°反
射ミラー ２６．２７・・・共振器ミラー２８−・・Ｇ
ａＡｓ基板、２９ ・”ＧａＡｓ層。
代理人 弁理士 本 庄 伸 介FIG. 1 is a sectional view of an embodiment of the present invention, and FIG. 2 is a sectional view of a conventional planar optical semiconductor device. l Q--GaAs substrate, 11, n-shaped quad, 1
2゜14.16... Quantum barrier layer, 13.15... Strained quantum well J-117... Light receiving region, 18... Light emitting region, 19... P-shaped rad layer, 20... - Cap layer, 21...p electrode, 22...n electrode, 23...light input section, 24...electrode separation region, 25°°°45° reflection mirror 26.27...resonator Mirror 28-...G
aAs substrate, 29 ・GaAs layer. Agent: Shinsuke Honjo, patent attorney
Claims (1)
た少なくとも１つ以上のＡｌ＿ｘＧａ＿１＿−＿ｘＡｓ
（０≦ｘ≦１）量子障壁層とＩｎ＿ｙＧａ＿１＿−＿ｙ
Ａｓ（０＜ｙ≦１）歪量子井戸層とからなる受光領域と
、少なくとも１つ以上のＡｌ＿ｕＧａ＿１＿−＿ｕＡｓ
（０≦ｕ≦１）量子障壁層とＩｎ＿ｖＧａ＿１＿−＿ｖ
Ａｓ（０＜ｖ≦１）歪量子井戸層とからなる発光領域と
を有し、前記ＧａＡｓ基板裏面に光入力部を有し、前記
受光領域及び発光領域の禁制帯幅が前記ＧａＡｓ基板の
禁制帯幅より狭く、前記光入力部から入射した光を前記
受光領域で吸収し、前記発光領域の発光を前記ＧａＡｓ
基板に垂直な方向から取り出すことを特徴とする面形光
半導体装置。having a GaAs substrate, at least one Al_xGa_1_-_xAs crystal grown on the GaAs substrate;
(0≦x≦1) quantum barrier layer and In_yGa_1_-_y
a light-receiving region consisting of an As (0<y≦1) strained quantum well layer and at least one Al_uGa_1_−_uAs
(0≦u≦1) quantum barrier layer and In_vGa_1_-_v
an As (0<v≦1) strained quantum well layer, and a light input portion on the back surface of the GaAs substrate, and the forbidden band width of the light receiving region and the light emitting region is within the forbidden range of the GaAs substrate. narrower than the band width, the light incident from the light input section is absorbed by the light receiving region, and the light emitted from the light emitting region is absorbed by the GaAs.
A planar optical semiconductor device characterized by being extracted from a direction perpendicular to a substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63245254A JPH088393B2 (en) | 1988-09-29 | 1988-09-29 | Flat optical semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63245254A JPH088393B2 (en) | 1988-09-29 | 1988-09-29 | Flat optical semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0291979A true JPH0291979A (en) | 1990-03-30 |
| JPH088393B2 JPH088393B2 (en) | 1996-01-29 |
Family
ID=17130945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63245254A Expired - Lifetime JPH088393B2 (en) | 1988-09-29 | 1988-09-29 | Flat optical semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH088393B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05175598A (en) * | 1991-12-25 | 1993-07-13 | Sanyo Electric Co Ltd | Semiconductor laser device |
-
1988
- 1988-09-29 JP JP63245254A patent/JPH088393B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05175598A (en) * | 1991-12-25 | 1993-07-13 | Sanyo Electric Co Ltd | Semiconductor laser device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH088393B2 (en) | 1996-01-29 |
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