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JPH0290634A - Bonding pad of semiconductor device - Google Patents

Bonding pad of semiconductor device

Info

Publication number
JPH0290634A
JPH0290634A JP63245039A JP24503988A JPH0290634A JP H0290634 A JPH0290634 A JP H0290634A JP 63245039 A JP63245039 A JP 63245039A JP 24503988 A JP24503988 A JP 24503988A JP H0290634 A JPH0290634 A JP H0290634A
Authority
JP
Japan
Prior art keywords
bonding
bonding pads
slits
pad
wirings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63245039A
Other languages
Japanese (ja)
Other versions
JP2621420B2 (en
Inventor
Koichi Togashi
富樫 孝市
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP63245039A priority Critical patent/JP2621420B2/en
Publication of JPH0290634A publication Critical patent/JPH0290634A/en
Application granted granted Critical
Publication of JP2621420B2 publication Critical patent/JP2621420B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Control Of Position Or Direction (AREA)

Abstract

PURPOSE:To reduce the time required for the input and correction of coordinate by a method wherein the register reference marks comprising slits or projections are provided on bonding pads or peripheral parts thereof corresponding to the alignment cross mark of a wire bonder. CONSTITUTION:A semiconductor element 1 is formed of bonding pads 2 and inner wirings. Pad leading-out wirings 3 connecting the bonding pads 2 to the inner wirings are formed similarly to the bonding pads 2. Slits 4-1 to 4-3 are simultaneously formed with the bonding pads 2 and the pad leading-out wirings 3. The slit 4-1 is provided opposite to the pad leading-out wirings 3 while the slits 4-2, 4-3 are respectively provided on both sides holding a line connecting the pad leading-out wirings 3 to the slit 4-1. The accurate bonding process can be performed by coordinate inputting so that the center of a register cross mark 5-1 may be aligned with the center of the bonding pads 2. In such a constitution, the pad leading-out wirings 3, the slits 4-1 to 4-3 can be used as the reference marks of the bonding coordinates input positions.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体装置のボンディングパッドに関し、特
にワイヤボンディングを正確な位置に行うためのボンデ
ィングパッドの形状に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a bonding pad for a semiconductor device, and particularly to the shape of a bonding pad for performing wire bonding at an accurate position.

〔従来の技術〕[Conventional technology]

従来の半導体装ヱのボンディングパッドは、平行四辺形
1円形、又はそれらに類似する形状となっていた。
A bonding pad of a conventional semiconductor device has a shape of a parallelogram, a circle, or a shape similar thereto.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の半導体装置のボンディングパッドは、単
に平行四辺形1円形又はそれらに類似した形状となって
いるので、ボンディング座標入力をセルフティーチ(1
つ1つ手動で座標入力すること)で行う場合、数百側の
ボンディングパッドの中心又は目標位置に正確に入力す
ることは困難であり、ボンディング位置ズレを起し歩留
低下の原因となる。又、座標入力、座標修正に費す時間
も多くなるという欠点がある。
The bonding pads of the conventional semiconductor devices described above have a shape of a parallelogram, a circle, or a similar shape, so bonding coordinate input is performed by self-teaching (
When manually inputting coordinates one by one, it is difficult to accurately input the center or target position of hundreds of bonding pads, which causes bonding position deviation and a decrease in yield. Another drawback is that it takes a lot of time to input and correct coordinates.

〔課題を解決するための手段〕[Means to solve the problem]

本発明は、半導体装置のボンディングパッドにおいて、
前記ボンディングパッドはその周辺部に、ワイヤボンダ
の位置決めクロスマークに対応して、スリット又は突起
からなる位置合せ基準マークを有しているというもので
ある。
The present invention provides, in a bonding pad of a semiconductor device,
The bonding pad has, on its periphery, an alignment reference mark consisting of a slit or a protrusion, corresponding to the positioning cross mark of the wire bonder.

〔実施例〕〔Example〕

次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図(a)は本発明の第1の実施例の平面図であり、
第1図(b)は第1図(a)の部分拡大図である。
FIG. 1(a) is a plan view of the first embodiment of the present invention,
FIG. 1(b) is a partially enlarged view of FIG. 1(a).

半導体素子1は公知の半導体製造技術によってボンディ
ングパッド2及び内部配線(図示せず)が形成されてい
る。パッド引き出し配線3はボンディングパッド2と内
部配線を接続するものでボンディングパッド2と同様に
形成される。スリット4−1〜4−3は数μm〜数十μ
mの大きさでボンディングパッド2及びパッド引き出し
配線3と同時に形成される。パッド引き出し配線3と対
向してスリット4−1が設けられ、パッド引き出し配線
3とスリット4−1とを結ぶ直線を挟んで両側にそれぞ
れスリット4−2.4−3が設けられている。
The semiconductor element 1 has bonding pads 2 and internal wiring (not shown) formed by a known semiconductor manufacturing technique. The pad lead-out wiring 3 connects the bonding pad 2 and the internal wiring, and is formed in the same manner as the bonding pad 2. Slits 4-1 to 4-3 are several μm to several tens of μm
It is formed simultaneously with the bonding pad 2 and the pad lead-out wiring 3 with a size of m. A slit 4-1 is provided facing the pad lead-out wiring 3, and slits 4-2 and 4-3 are provided on both sides of a straight line connecting the pad lead-out wiring 3 and the slit 4-1.

第2図はボンディング座標入力時のボンディングパッド
2とスリット4−1〜4−4とボンダーのCR7画面上
の位置決めクロスマーク5−1゜5−2の位置関係を示
したもので、位置決めクロスマークの中心がボンディン
グパッド2の中心になるように座標入力することにより
、正確なボンディングが可能となる。すなわち、パッド
引出配線3、スリット4−1〜4−3はボンディング座
標入力位置の基準マークとして使用できる。
Figure 2 shows the positional relationship between the bonding pad 2, the slits 4-1 to 4-4, and the positioning cross marks 5-1 and 5-2 on the CR7 screen of the bonder when bonding coordinates are input. By inputting the coordinates so that the center of the bonding pad 2 becomes the center of the bonding pad 2, accurate bonding becomes possible. That is, the pad lead wiring 3 and the slits 4-1 to 4-3 can be used as reference marks for the bonding coordinate input position.

第3図は本発明の第2の実施例2を説明するための平面
図である。突起6−1は第1の基準マークとしてパッド
引き出し配線に対向する位置に設け、一対の突起6−2
.6−3を第2の基準マーク、第3の基準マークとして
中心部より縦方向に任意の距離だけずらした位置に形成
する。
FIG. 3 is a plan view for explaining the second embodiment of the present invention. The protrusion 6-1 is provided as a first reference mark at a position facing the pad lead-out wiring, and a pair of protrusions 6-2
.. 6-3 are formed as a second reference mark and a third reference mark at positions shifted by an arbitrary distance from the center in the vertical direction.

この実施例では、基準マークが突起からなっているので
スリットを設けるのに比ベボンディング面積が大きくで
きる。又、ボンディング座標入力位置を任意に選択でき
るため、内部配線及び内部素子との関係でより自由な設
計ができる等の利点がある。
In this embodiment, since the reference mark is made of a projection, the bonding area can be increased compared to providing a slit. Furthermore, since the bonding coordinate input position can be arbitrarily selected, there is an advantage that more flexible design can be performed in relation to internal wiring and internal elements.

尚、上記実施例でボンディングパッ、ドの形状を長方形
で説明したが、他の平行四辺形や円形等でもよく、それ
らの組合せでもよい。同様にスリット及び突起について
も他の形状で形成しても良い。
In the above embodiments, the shapes of the bonding pads are rectangular, but other shapes such as parallelograms, circles, etc., or a combination thereof may also be used. Similarly, the slits and protrusions may also be formed in other shapes.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、半導体素子のボンディン
グパッドにボンディング座棟入力時に目標となる基準マ
ークを形成することにより、ボンディング座環入力時間
の短縮及びボンディング位置ズレを減少できる効果があ
る。
As described above, the present invention has the effect of shortening the bonding seat ring input time and reducing bonding position deviation by forming a reference mark that is a target at the time of bonding seat ring input on the bonding pad of a semiconductor element.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(a)は本発明の第1の実施例を説明するための
平面図、第1図(b)は第1図(a)の部分拡大図、第
2図はボンディング作業を説明するための図、第3図は
第2の実施例を説明するための平面図である。 1・・・半導体素子、2・・・ボンディングパッド、3
・・・パッド引き出し配線、4−1〜4−3・・・スリ
ット、5・・・位置決めクロスマーク、6−1〜6−3
・・・突起。
FIG. 1(a) is a plan view for explaining the first embodiment of the present invention, FIG. 1(b) is a partially enlarged view of FIG. 1(a), and FIG. 2 is for explaining the bonding operation. FIG. 3 is a plan view for explaining the second embodiment. 1... Semiconductor element, 2... Bonding pad, 3
...Pad extraction wiring, 4-1 to 4-3...Slit, 5...Positioning cross mark, 6-1 to 6-3
···protrusion.

Claims (1)

【特許請求の範囲】[Claims] 半導体装置のボンディングパッドにおいて、前記ボンデ
ィングパッドはその周辺部に、ワイヤボンダの位置決め
クロスマークに対応して、スリット又は突起からなる位
置合せ基準マークを有していることを特徴とする半導体
装置のボンディングパッド。
A bonding pad for a semiconductor device, wherein the bonding pad has an alignment reference mark made of a slit or a protrusion on its periphery, corresponding to a positioning cross mark of a wire bonder. .
JP63245039A 1988-09-28 1988-09-28 Bonding pads for semiconductor devices Expired - Lifetime JP2621420B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63245039A JP2621420B2 (en) 1988-09-28 1988-09-28 Bonding pads for semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63245039A JP2621420B2 (en) 1988-09-28 1988-09-28 Bonding pads for semiconductor devices

Publications (2)

Publication Number Publication Date
JPH0290634A true JPH0290634A (en) 1990-03-30
JP2621420B2 JP2621420B2 (en) 1997-06-18

Family

ID=17127675

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63245039A Expired - Lifetime JP2621420B2 (en) 1988-09-28 1988-09-28 Bonding pads for semiconductor devices

Country Status (1)

Country Link
JP (1) JP2621420B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07235682A (en) * 1994-02-22 1995-09-05 Nec Yamagata Ltd Semiconductor device
JPH10199921A (en) * 1997-01-09 1998-07-31 Hitachi Ltd Semiconductor device with position recognition mark
US5804883A (en) * 1995-07-13 1998-09-08 Samsung Electronics Co., Ltd. Bonding pad in semiconductor device
JP2003347407A (en) * 1997-03-14 2003-12-05 Toshiba Corp Microwave integrated circuit device
JP2008211086A (en) * 2007-02-27 2008-09-11 Renesas Technology Corp Semiconductor chip
JP2008263165A (en) * 2007-03-19 2008-10-30 Mitsubishi Electric Corp Electrode pattern and wire bonding method
KR20180120598A (en) * 2017-04-27 2018-11-06 르네사스 일렉트로닉스 가부시키가이샤 Semiconductor device and manufacturing method thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5131812B2 (en) * 2007-02-07 2013-01-30 ルネサスエレクトロニクス株式会社 Semiconductor device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07235682A (en) * 1994-02-22 1995-09-05 Nec Yamagata Ltd Semiconductor device
US5804883A (en) * 1995-07-13 1998-09-08 Samsung Electronics Co., Ltd. Bonding pad in semiconductor device
JPH10199921A (en) * 1997-01-09 1998-07-31 Hitachi Ltd Semiconductor device with position recognition mark
JP2003347407A (en) * 1997-03-14 2003-12-05 Toshiba Corp Microwave integrated circuit device
JP2008211086A (en) * 2007-02-27 2008-09-11 Renesas Technology Corp Semiconductor chip
JP2008263165A (en) * 2007-03-19 2008-10-30 Mitsubishi Electric Corp Electrode pattern and wire bonding method
KR20180120598A (en) * 2017-04-27 2018-11-06 르네사스 일렉트로닉스 가부시키가이샤 Semiconductor device and manufacturing method thereof
CN108807323A (en) * 2017-04-27 2018-11-13 瑞萨电子株式会社 Semiconductor devices and its manufacturing method
JP2018186207A (en) * 2017-04-27 2018-11-22 ルネサスエレクトロニクス株式会社 Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
JP2621420B2 (en) 1997-06-18

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