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JPH0288257U - - Google Patents

Info

Publication number
JPH0288257U
JPH0288257U JP16923788U JP16923788U JPH0288257U JP H0288257 U JPH0288257 U JP H0288257U JP 16923788 U JP16923788 U JP 16923788U JP 16923788 U JP16923788 U JP 16923788U JP H0288257 U JPH0288257 U JP H0288257U
Authority
JP
Japan
Prior art keywords
amorphous silicon
semiconductor layer
silicon semiconductor
optical sensor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16923788U
Other languages
English (en)
Other versions
JP2508064Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1988169237U priority Critical patent/JP2508064Y2/ja
Publication of JPH0288257U publication Critical patent/JPH0288257U/ja
Application granted granted Critical
Publication of JP2508064Y2 publication Critical patent/JP2508064Y2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Description

【図面の簡単な説明】
第１図は本考案に係る光センサーの構造を示す
断面図である。第２図は微結晶シリコン層の膜厚
とＰ―Ｉ―Ｎ接合した非晶質シリコン半導体層の
分光感度の変化を示す特性図である。第３図はＰ
―Ｉ―Ｎ接合した非晶質シリコン半導体層の成膜
基板温度と光劣化との関係を示す特性図である。
第４図はＰ―Ｉ―Ｎ接合した非晶質シリコン半導
体層の成膜基板温度と分光感度との関係を示す特
性図である。第５図は従来の光センサーの構造を
示す断面図である。 １，５１……透明基板、２……Ｎ型微結晶シリ
コン層、３，５３……非晶質シリコン半導体層、
４，５４……金属電極、５２……透明導電膜。

Claims (1)

    【実用新案登録請求の範囲】
  1. 透明基板上に、Ｎ型微結晶層、Ｐ―Ｉ―Ｎ接合
    した非晶質シリコン半導体層及び裏面電極を順次
    積層した光センサー。
JP1988169237U 1988-12-27 1988-12-27 光センサ― Expired - Fee Related JP2508064Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1988169237U JP2508064Y2 (ja) 1988-12-27 1988-12-27 光センサ―

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988169237U JP2508064Y2 (ja) 1988-12-27 1988-12-27 光センサ―

Publications (2)

Publication Number Publication Date
JPH0288257U true JPH0288257U (ja) 1990-07-12
JP2508064Y2 JP2508064Y2 (ja) 1996-08-21

Family

ID=31459113

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1988169237U Expired - Fee Related JP2508064Y2 (ja) 1988-12-27 1988-12-27 光センサ―

Country Status (1)

Country Link
JP (1) JP2508064Y2 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007165865A (ja) * 2005-11-18 2007-06-28 Semiconductor Energy Lab Co Ltd 光電変換装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60148176A (ja) * 1984-01-13 1985-08-05 Hitachi Maxell Ltd 半導体素子
JPS63281478A (ja) * 1987-05-13 1988-11-17 Sharp Corp 半導体受光装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60148176A (ja) * 1984-01-13 1985-08-05 Hitachi Maxell Ltd 半導体素子
JPS63281478A (ja) * 1987-05-13 1988-11-17 Sharp Corp 半導体受光装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007165865A (ja) * 2005-11-18 2007-06-28 Semiconductor Energy Lab Co Ltd 光電変換装置

Also Published As

Publication number Publication date
JP2508064Y2 (ja) 1996-08-21

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees