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JPH0286188A - Ceramic wiring board baked at a low temperature - Google Patents

Ceramic wiring board baked at a low temperature

Info

Publication number
JPH0286188A
JPH0286188A JP23659288A JP23659288A JPH0286188A JP H0286188 A JPH0286188 A JP H0286188A JP 23659288 A JP23659288 A JP 23659288A JP 23659288 A JP23659288 A JP 23659288A JP H0286188 A JPH0286188 A JP H0286188A
Authority
JP
Japan
Prior art keywords
ceramic
wiring board
ceramic layer
layers
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23659288A
Other languages
Japanese (ja)
Inventor
Yuji Umeda
勇治 梅田
Tadashi Odagiri
正 小田切
Takeshi Suzuki
剛 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Priority to JP23659288A priority Critical patent/JPH0286188A/en
Priority to US07/375,919 priority patent/US5041342A/en
Publication of JPH0286188A publication Critical patent/JPH0286188A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To make a ceramic wiring board of a low dielectric constant and high bending strength by forming said ceramic wiring board from a first ceramic layer of high bending-resisting strength and a second ceramic layer of a low dielectric constant and baking the first and second ceramic layers at the same time. CONSTITUTION:A ceramic wiring board, including an insulating base material baked at a low temperature and an external terminal for input and output connected thereto, is made of a green sheet comprising a first ceramic layer 1 of bending-resisting strength of 25kg/mm<2> or larger and a second ceramic layer 2 of a dielectric constant of 7 or lower. Through holes are made in the ceramic layers 1 and 2 by punching and filled up with conductive paste 3 and conductive paste 4 is formed on the surfaces of the layers by screen printing. A desired number of the printed layers are piled up. These green sheets are applied to each other in the specific conditions and baked at the specific temperature at the same time. Thereby the wiring board having sufficiently high bonding strength to an external terminal, excellent signal propagation characteristic, and a reliable external terminal can be obtained.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、低温焼成セラミック配線基板に関するもので
ある。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a low temperature fired ceramic wiring board.

(従来の技術) 低温焼成絶縁基体は、例えばガラス−セラミック複合体
若しくは結晶化ガラス体等の適当なガラス組成を適切に
選択することにより、基板の誘電率を低くすることがで
き、これが配線基板における信号伝播の高速化および高
密度化に役立っている。
(Prior Art) By appropriately selecting a suitable glass composition such as a glass-ceramic composite or a crystallized glass body, a low-temperature fired insulating substrate can have a low dielectric constant, and this can be used as a wiring board. It is useful for increasing the speed and density of signal propagation in

(発明が解決しようとする課題) しかしながら、低温焼成絶縁基体は、それ自体では抗折
強度が低いため、入出力用の外部端子を基板上に設けた
メタライズ層を介して従来の通りに、高融点のろう材(
例えば共晶銀ろう等)でろう付けを行う場合には、ろう
付は時の熱応力により外部端子の取り付は部分に残留応
力が発生し、微小なりラック、さらには磁器破壊が生じ
て十分な端子付着強度がでないという問題点があった。
(Problem to be solved by the invention) However, since the low-temperature fired insulating substrate itself has low bending strength, external terminals for input/output are connected to the substrate through a metallized layer provided on the substrate. Melting point brazing filler metal (
When brazing with eutectic silver solder (for example, eutectic silver solder, etc.), the thermal stress generated during brazing will generate residual stress in the parts where external terminals are attached, resulting in minute cracks, cracks, and even porcelain breakage. There was a problem that the terminal adhesion strength was not sufficient.

一方、問題点を解消するためには、基板の抗折強度を高
めてやればよいが、このためには例えば、上記低温焼成
絶縁基体として、ガラス−セラミック複合体を用いた場
合、基板の抗折強度を高める方法として次の2つの方法
が知られている。第1として、前記低温焼成絶縁基体の
組成におけるセラミックとして含まれる例えばアルミナ
の含有率を高めることにより基板の抗折強度を高める方
法がある。第2として、前記低温焼成絶縁基体の組成に
おけるガラスとして鉛ホウケイ酸ガラスを用い、ガラス
を結晶化することにより基板の抗折強度を高める方法が
ある。しかし上記2つの方法により基板の抗折強度を高
めるといずれも基板強度が高くなると同時に基板の誘電
率が高くなって、低温焼成基板の特性が薄れてしまうと
いう不具合が生じる。
On the other hand, in order to solve the problem, it is possible to increase the bending strength of the substrate. The following two methods are known as methods for increasing the flexural strength. The first method is to increase the flexural strength of the substrate by increasing the content of, for example, alumina as a ceramic in the composition of the low-temperature fired insulating substrate. A second method is to use lead borosilicate glass as the glass in the composition of the low temperature fired insulating substrate and crystallize the glass to increase the bending strength of the substrate. However, increasing the bending strength of the substrate by the above two methods causes a problem in that the dielectric constant of the substrate increases at the same time as the substrate strength increases, and the characteristics of the low-temperature fired substrate deteriorate.

この発明の目的は、上記問題点および不具合を解消し、
同時焼成により形成され、低い誘電率と高い抗折強度と
を兼ね備えた低温焼成セラミック配線基板を提供するこ
とにある。
The purpose of this invention is to solve the above problems and inconveniences,
The object of the present invention is to provide a low-temperature fired ceramic wiring board that is formed by simultaneous firing and has both a low dielectric constant and high bending strength.

(課題を解決するための手段) 本発明は、低温焼成絶8M基体に入出力用の外部端子が
接合されるセラミック配線基板であって、このセラミッ
ク配線基板が、抗折強度が25kg/mm2以上の第1
のセラミンク層と、誘電率が7以下の第2のセラミック
層とよりなり、かつ、第1のセラミック層と第2のセラ
ミック層とが同時焼成より成ることを特徴とするもので
ある。
(Means for Solving the Problems) The present invention is a ceramic wiring board to which input/output external terminals are bonded to a low-temperature fired 8M substrate, the ceramic wiring board having a bending strength of 25 kg/mm2 or more. the first of
and a second ceramic layer having a dielectric constant of 7 or less, and is characterized in that the first ceramic layer and the second ceramic layer are co-fired.

(作 用) 本発明では、低温焼成セラミック配線基板を同時焼成さ
れる2種類のセラミック層から形成し、この配線基板の
配線導体が形成される(即ち主に信号が伝播する)第2
のセラミック層の誘電率を低くすることにより、低温焼
成基板の特性を生かした信号伝播の高速化を実現する。
(Function) In the present invention, a low-temperature-fired ceramic wiring board is formed from two types of ceramic layers that are fired simultaneously, and a second layer is formed on which the wiring conductors of the wiring board are formed (that is, through which signals mainly propagate).
By lowering the dielectric constant of the ceramic layer, high-speed signal propagation is achieved by taking advantage of the characteristics of the low-temperature fired substrate.

また、外部端子が形成される第1のセラミック層には、
抗折強度(曲げ強度)が高いものを選択して外部端子の
付着強度が十分に高い配線基板を形成する。
In addition, the first ceramic layer on which the external terminal is formed includes:
A material with high bending strength (bending strength) is selected to form a wiring board with sufficiently high adhesion strength for external terminals.

(実施例) 以下に、本発明を幾つかの実施例に基づいて説明する。(Example) The present invention will be explained below based on some examples.

まず、基板のガラス成分として、表1に示すN。First, N shown in Table 1 is used as a glass component of the substrate.

1〜No、 3の3種類の低融点ガラスを調整する。Three types of low melting point glasses, No. 1 to No. 3, were prepared.

表 1  ガラス組成(wt%) ここで、基板の抗折強度の測定は幅8 mm、長さ40
mm、厚さ0.8mmの試験片をスパン30mmの3点
曲げ試験により行った。又、誘電率の測定はJIS K
6911に準じて行った。
Table 1 Glass composition (wt%) Here, the bending strength of the substrate was measured with a width of 8 mm and a length of 40 mm.
A three-point bending test with a span of 30 mm was performed on a test piece with a thickness of 0.8 mm. Also, the measurement of dielectric constant is JIS K
6911.

表 2  低温焼成セラミックスの組成および物性次い
で、3種類の上記低融点ガラスにアルミナ粉体、さらに
は石英ガラスを以下の表2に示すような種々の配合割合
で混合して、ドクターブレード法により種々の誘電率お
よび抗折強度を有するセラミック層のグリーンシートを
形成する。
Table 2 Composition and physical properties of low-temperature fired ceramics Next, the three types of low-melting glasses mentioned above were mixed with alumina powder and quartz glass in various proportions as shown in Table 2 below, and various mixtures were prepared using the doctor blade method. A green sheet of ceramic layer is formed having a dielectric constant and a bending strength of .

これらのセラミック層のグリーンシートを、第1のセラ
ミック層1が第2のセラミック層2より抗折強度が大き
いように選択しく表3参照)、それぞれのセラミック層
1,2にスルーホールをパンチにより形成し、スルーホ
ール中に導電ペースト3を埋め込み、さらにそれら表面
に導電ペースト4をスクリーン印刷により形成する。第
1図(a)に示す例において、第1のセラミック層は、
そのグリーンシートに金型によりスルーホールを形成し
、そのスルーホールに導電ペーストを埋め込んで形成し
、第2のセラミンク層は、そのグリーンシートに同じく
スルーホールを形成し、そのスルーホール中に導電ペー
ストを埋め込み、さらにその表面に導電ペーストをスク
リーン印刷して形成される層を、所望の数だけ重ねてい
る。これら層の積層は、電気的接続がとれるように為さ
れる。
The green sheets of these ceramic layers are selected so that the first ceramic layer 1 has a higher bending strength than the second ceramic layer 2 (see Table 3), and through holes are punched in each of the ceramic layers 1 and 2. A conductive paste 3 is embedded in the through holes, and a conductive paste 4 is formed on the surfaces thereof by screen printing. In the example shown in FIG. 1(a), the first ceramic layer is
A through hole is formed in the green sheet using a mold, and a conductive paste is filled in the through hole to form the second ceramic layer.A second ceramic layer is formed by forming a through hole in the green sheet and filling the through hole with conductive paste. The desired number of layers are stacked on top of each other by screen-printing a conductive paste. These layers are laminated so that electrical connections can be made.

また第1および第2のセラミック層のグリーンシートに
ついても導電的な接続がとれるように重ねられる。第1
のセラミック層1の厚さは約10〜800μmであるこ
とが好ましい。これらのグリーンシートは温度120°
C2圧力50kg/cm2の条件下で5分間維持して圧
着される。この様子を第1図(a)に示す。続いて各試
料を表3に示す焼成温度にて夫々同時焼成する。次に導
電ペーストによりセラミック層中に形成された配線導体
の2 mmφバッドの端子接続部に電解ニッケルめっき
5を施す。このパッドに直径0.3mmφのコバール製
のリードピン6を共晶銀ろう7を用い、窒素雰囲気中で
温度800°Cに5分間維持して熱処理することにより
ろう付けする(第1図(b)参照)。
Further, the green sheets of the first and second ceramic layers are also overlapped so that a conductive connection can be established. 1st
The thickness of the ceramic layer 1 is preferably about 10 to 800 μm. These green sheets have a temperature of 120°
C2 pressure is maintained at 50 kg/cm2 for 5 minutes. This situation is shown in FIG. 1(a). Subsequently, each sample was simultaneously fired at the firing temperatures shown in Table 3. Next, electrolytic nickel plating 5 is applied to the terminal connection portion of the 2 mmφ pad of the wiring conductor formed in the ceramic layer using conductive paste. A Kovar lead pin 6 with a diameter of 0.3 mmφ is brazed to this pad using eutectic silver solder 7 by heat treatment at a temperature of 800°C for 5 minutes in a nitrogen atmosphere (Fig. 1(b)). reference).

以上のように得られる低温焼成セラミック配線基板に対
して、外部端子のろう付は後の付着強度を調べるため、
垂直引張試験を実施した。この垂直引張試験は、上記配
線基板に接合されたリードビンを、共晶銀ろうを介して
接合した試験体の接着面に対して垂直方向に向かって引
張速度0 、5 mm /分にて引っ張り、上記リード
ビンが基板から剥離したときの強度を測るものである。
For the low-temperature fired ceramic wiring board obtained as described above, in order to check the adhesion strength after brazing the external terminals,
A vertical tensile test was conducted. In this vertical tensile test, the lead bin bonded to the wiring board was pulled in a direction perpendicular to the adhesive surface of the test piece bonded via eutectic silver solder at a tensile rate of 0.5 mm/min. This is to measure the strength when the lead bin is peeled off from the substrate.

この垂直引張試験の結果についても上記表3に「リード
ピン付着強度」として示す。
The results of this vertical tensile test are also shown in Table 3 above as "lead pin adhesion strength".

また比較のため、比較例として単一の曲げ強度が比較的
低い低温焼成セラミック基板を選び、それを上述の実施
例と同様にして配線基板を形成した。さらに第1のセラ
ミック層が第2のセラミック層と同時焼成でなく後焼き
付けにより形成される場合の例を比較例とした。これら
比較例についても上述した垂直引張試験を実施した。
For comparison, a single low-temperature fired ceramic substrate with relatively low bending strength was selected as a comparative example, and a wiring board was formed using it in the same manner as in the above-mentioned example. Further, an example in which the first ceramic layer and the second ceramic layer were formed by post-baking instead of being co-fired was used as a comparative example. These comparative examples were also subjected to the vertical tensile test described above.

表3のり−ドピンの付着強度から分かるように、抗折強
度が小さな単一の配線基板上では、本発明による実施例
と異なり、十分な付着強度が得られない。また第1のセ
ラミック層に第2のセラミック層を後焼き付けする場合
には、本発明例の同時焼成におけるものと異なり、両層
の付着が十分でないため、これらがその界面から剥離し
、十分なリードピンの付着強度が得られなかった。
As can be seen from the adhesion strength of the glue-doped pins in Table 3, sufficient adhesion strength cannot be obtained on a single wiring board having a small bending strength, unlike the examples according to the present invention. In addition, when the second ceramic layer is post-baked on the first ceramic layer, unlike the simultaneous firing of the present invention example, since the adhesion of both layers is not sufficient, they peel off from the interface and the The adhesion strength of the lead pin could not be obtained.

以上、本発明の実施例について説明したが、第2のセラ
ミック層はグリーンシート状にして積層する他に、スク
リーン印刷により第1のセラミック層上に印刷してもよ
く、この場合でも上記表3と同様の結果が得られる。
The embodiments of the present invention have been described above, but the second ceramic layer may be laminated in the form of a green sheet or may be printed on the first ceramic layer by screen printing. A similar result is obtained.

(発明の効果) 以上の説明から明らかなように、低温焼成セラミック配
線基板を異なる2種類のセラミック層から形成し、この
配線基板の主に信号伝播側の第2のセラミック層の誘電
率を低くして、低温焼成基板の特性を生かした信号伝播
の高速化を実現する。
(Effects of the Invention) As is clear from the above description, a low-temperature fired ceramic wiring board is formed from two different types of ceramic layers, and the dielectric constant of the second ceramic layer mainly on the signal propagation side of this wiring board is lowered. This enables high-speed signal propagation by taking advantage of the characteristics of the low-temperature fired substrate.

一方、外部端子の形成される側の第1のセラミック層に
は、抗折強度が高いものを選択し、これらセラミンク層
を同時焼成することにより、外部端子の付着強度が十分
に高い配線基板を形成する。
On the other hand, for the first ceramic layer on the side where the external terminals are formed, a material with high bending strength is selected, and by co-firing these ceramic layers, a wiring board with sufficiently high adhesion strength for the external terminals can be created. Form.

したがって、信号の伝播特性に優れ、外部端子の信頼性
もある配線基板が得られて、高性能なICパッケージ等
に応用可能である。
Therefore, a wiring board with excellent signal propagation characteristics and reliable external terminals can be obtained, which can be applied to high-performance IC packages and the like.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(a)、 (b)は本発明の一例を示す説明図で
ある。 1・・・第1のセラミック層 2・・・第2のセラミック層 3.4・・・導電ペースト 5・・・ニッケルめっき 6・・・リードビン 7・・・銀ろう 特許出願人  日本碍子株式会社
FIGS. 1(a) and 1(b) are explanatory diagrams showing an example of the present invention. 1...First ceramic layer 2...Second ceramic layer 3.4...Conductive paste 5...Nickel plating 6...Lead bin 7...Silver solder patent applicant Nippon Insulator Co., Ltd.

Claims (1)

【特許請求の範囲】[Claims] 1.低温焼成絶縁基体に入出力用の外部端子が接合され
るセラミック配線基板であって、このセラミック配線基
板が、抗折強度が25kg/mm^2以上の第1のセラ
ミック層と、誘電率が7以下の第2のセラミック層とよ
りなり、かつ、第1のセラミック層と第2のセラミック
層とが同時焼成より成ることを特徴とする低温焼成セラ
ミック配線基板。
1. A ceramic wiring board to which input/output external terminals are bonded to a low-temperature fired insulating base, the ceramic wiring board comprising a first ceramic layer having a bending strength of 25 kg/mm^2 or more and a dielectric constant of 7. A low-temperature fired ceramic wiring board comprising the following second ceramic layer, the first ceramic layer and the second ceramic layer being co-fired.
JP23659288A 1988-07-08 1988-09-22 Ceramic wiring board baked at a low temperature Pending JPH0286188A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP23659288A JPH0286188A (en) 1988-09-22 1988-09-22 Ceramic wiring board baked at a low temperature
US07/375,919 US5041342A (en) 1988-07-08 1989-07-06 Multilayered ceramic substrate fireable in low temperature

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23659288A JPH0286188A (en) 1988-09-22 1988-09-22 Ceramic wiring board baked at a low temperature

Publications (1)

Publication Number Publication Date
JPH0286188A true JPH0286188A (en) 1990-03-27

Family

ID=17002929

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23659288A Pending JPH0286188A (en) 1988-07-08 1988-09-22 Ceramic wiring board baked at a low temperature

Country Status (1)

Country Link
JP (1) JPH0286188A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2365494A1 (en) 2010-03-09 2011-09-14 TDK Corporation Ceramic electronic component and method of manufacturing ceramic electronic component
EP2372731A1 (en) 2010-03-31 2011-10-05 TDK Corporation Ceramic Electronic Component and Method of Manufacturing Ceramic Electronic Component

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2365494A1 (en) 2010-03-09 2011-09-14 TDK Corporation Ceramic electronic component and method of manufacturing ceramic electronic component
US8846210B2 (en) 2010-03-09 2014-09-30 Tdk Corporation Ceramic electronic component and method of manufacturing ceramic electronic component
EP2372731A1 (en) 2010-03-31 2011-10-05 TDK Corporation Ceramic Electronic Component and Method of Manufacturing Ceramic Electronic Component

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