JPH0277171A - Semiconductor device for photodetection use - Google Patents
Semiconductor device for photodetection useInfo
- Publication number
- JPH0277171A JPH0277171A JP63229210A JP22921088A JPH0277171A JP H0277171 A JPH0277171 A JP H0277171A JP 63229210 A JP63229210 A JP 63229210A JP 22921088 A JP22921088 A JP 22921088A JP H0277171 A JPH0277171 A JP H0277171A
- Authority
- JP
- Japan
- Prior art keywords
- light
- board
- circuit board
- receiving element
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 17
- 238000000034 method Methods 0.000 claims abstract description 14
- 230000000149 penetrating effect Effects 0.000 claims abstract description 3
- 230000005540 biological transmission Effects 0.000 claims description 13
- 238000007789 sealing Methods 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 241000277269 Oncorhynchus masou Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、受光用フォＨＣ（集積回路）等の受光素子を
回路基板上に実装してなる光検出用の半導体装置に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a semiconductor device for photodetection in which a light receiving element such as a photodetector HC (integrated circuit) is mounted on a circuit board.
第３図は従来のこの種の光検出用半導体装置における受
光素子の実装位置近傍の要部拡大断面図である。FIG. 3 is an enlarged sectional view of a main part near the mounting position of a light receiving element in a conventional semiconductor device for photodetection of this type.
図中１は、−面側に光検出のための種々の回路部品を搭
載してなる回路基板であり、３は、例えばフォ１−ＩＣ
を用いてなる受光素子である。受光素子３は、−側に開
口部を有する箱形のパッケージ２０に内挿され、その受
光部４を前記開口部に対向させた状態にて、パンケージ
２０の底面略中央部に配されたダイポンドパッド部２１
に、金シリコン。In the figure, 1 is a circuit board on which various circuit parts for photodetection are mounted on the - side, and 3 is a circuit board having, for example, a photo 1-IC.
This is a light-receiving element using The light-receiving element 3 is inserted into a box-shaped package 20 having an opening on the negative side, and a die placed approximately at the center of the bottom of the pan cage 20 with the light-receiving part 4 facing the opening. Pound pad part 21
, gold silicon.
半田、銀エポキシ等のダイボンド剤を用いて固着されて
いる。パンケージ２０には、これの側面を内外に貫通す
るり一ド２２が設けてあり、前記受光素子３は、このリ
ード２２の内側端部に、ワイヤ２３を介してワイヤボン
ディングされている。受光素子３の取付は後、パッケー
ジ２０の前記開口部は、石英ガラス等を用いてなるキャ
ップ２４にて封止される。このようにパッケージ２０と
一体化された受光素子３は、前記リード２２の外側端部
を半田付は等の手段により固着せしめることにより、回
路基板ｌ上の所定位置に実装されており、適宜の駆動手
段により回転駆動される遮蔽板７に、前記キャップ２４
側を臨ませである。而して、図示しない発光源から発せ
られ、図中に白抜矢符にて示す如く伝播する光は、遮蔽
板７の回転位置に応じて遮蔽又は透過され、透過光が、
前記キャップ２４を通過して受光素子３の受光部４に照
射され、該受光素子３によって検出されるようになって
いる。It is fixed using a die bonding agent such as solder or silver epoxy. The pan cage 20 is provided with a lead 22 passing through the side surface of the pan cage 20 from inside to outside, and the light receiving element 3 is wire-bonded to the inner end of the lead 22 via a wire 23. After the light receiving element 3 is attached, the opening of the package 20 is sealed with a cap 24 made of quartz glass or the like. The light-receiving element 3 integrated with the package 20 is mounted at a predetermined position on the circuit board l by fixing the outer ends of the leads 22 by means such as soldering. The cap 24 is attached to the shielding plate 7 which is rotationally driven by the driving means.
Let's face the side. Therefore, light emitted from a light emitting source (not shown) and propagating as shown by the white arrow in the figure is blocked or transmitted depending on the rotational position of the shielding plate 7, and the transmitted light is
The light passes through the cap 24 and is irradiated onto the light receiving portion 4 of the light receiving element 3, and is detected by the light receiving element 3.
ところがこのような構成の従来の光検出用半導体装置に
おいては、発光源から受光素子３の受光部４までの離隔
距離を小さくすることに限界がある上、受光素子３は、
パッケージ２０を介して回路基板１上に取付けられてお
り、受光部４とこれへの照射光との間に十分な垂直度を
確保することが難しいため、光検出感度に固体差が生じ
ることが避けられず、十分な光検出感度を保証すること
が困難であった。However, in the conventional semiconductor device for photodetection having such a configuration, there is a limit to reducing the separation distance from the light emitting source to the light receiving part 4 of the light receiving element 3, and the light receiving element 3 is
It is mounted on the circuit board 1 via the package 20, and it is difficult to ensure sufficient perpendicularity between the light receiving section 4 and the light irradiated thereon, so individual differences in light detection sensitivity may occur. unavoidable, and it has been difficult to guarantee sufficient photodetection sensitivity.
また、パッケージ２０内部にワイヤボンディングにより
取付けられた受光素子３が、他の回路部品と共に回路基
板１上に実装されるため、装置全体の組立に際し、温度
条件、洗浄方法等に種々の制約が生じ、組立てに煩わし
さを伴うという難点があった。Furthermore, since the light receiving element 3 attached to the inside of the package 20 by wire bonding is mounted on the circuit board 1 together with other circuit components, there are various restrictions on temperature conditions, cleaning methods, etc. when assembling the entire device. However, there was a problem in that it was troublesome to assemble.
本発明は斯かる事情に鑑みてなされたものであり、受光
素子を回路基板上に精度よく実装することが可能である
と共に、組立て時における制約がな（、組立工程の簡略
化が図れる光検出用半導体装置を提供することを目的と
する。The present invention has been made in view of the above circumstances, and provides a photodetector that allows a light-receiving element to be mounted on a circuit board with high precision, and has no restrictions during assembly (and simplifies the assembly process). The purpose of the present invention is to provide a semiconductor device for use.
本発明に係る光検出用半導体装置は、回路基板に光透過
用の孔を形成し、この孔にその受光部を臨ませた態様に
て、前記回路基板上にフリップチップ法により受光素子
を実装したものである。In the semiconductor device for photodetection according to the present invention, a light-transmitting hole is formed in a circuit board, and a light-receiving element is mounted on the circuit board by a flip-chip method, with the light-receiving part facing the hole. This is what I did.
本発明においては、受光素子は回路基板上に直接的に実
装され、これへの照射光は、回路基板に形成された光透
過孔を介して該受光素子の受光部に達して検出される。In the present invention, the light-receiving element is mounted directly on the circuit board, and the light irradiated thereon reaches the light-receiving portion of the light-receiving element through a light transmission hole formed in the circuit board and is detected.
以下本発明をその実施例を示す図面に基づいて詳述する
。第１図は本発明に係る光検出用半導体装置における受
光素子の実装位置近傍の要部拡大断面図、第２図は同じ
く全体構成を示す一部拡大断面図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below based on drawings showing embodiments thereof. FIG. 1 is an enlarged cross-sectional view of a main part near the mounting position of a light-receiving element in a semiconductor device for photodetection according to the present invention, and FIG. 2 is a partially enlarged cross-sectional view showing the overall configuration.
図中１は、その−面上に光検出のための種々の回路部品
を搭載し、受光回路を構成してなる回路基板であり、該
回路基板１の一部には、これを表裏に貫通する態様にて
透過孔２が形成されている。In the figure, 1 is a circuit board on which various circuit parts for light detection are mounted to form a light receiving circuit. The transmission hole 2 is formed in this manner.
また図中３は、例えばフォ１−ＩＣを用いてなる受光素
子であり、該受光素子３は、その受光部４を透過孔２に
臨ませて、図示の如くフリップチップ法により、回路基
板１の前記−面上に実装されている。回路基板１には、
受光素子３を保護すべく、これを囲繞する態様にて箱形
のカバ一部材５が取付けられ、また、受光素子３の実装
側と逆側における前記透過孔２の開口部には、石英ガラ
ス等、光透過可能な材料を用いてなる封止キャップ６が
装着されており、受光素子３の実装部近傍は、前記カバ
一部材５と封止キャップ６とにより気密に封止されてい
る。Reference numeral 3 in the figure is a light-receiving element using, for example, a photo-1-IC. is mounted on the above-mentioned surface. On the circuit board 1,
In order to protect the light-receiving element 3, a box-shaped cover member 5 is attached to surround it, and the opening of the transmission hole 2 on the side opposite to the mounting side of the light-receiving element 3 is covered with quartz glass. A sealing cap 6 made of a light-transmissive material such as the like is attached, and the vicinity of the mounting portion of the light receiving element 3 is hermetically sealed by the cover member 5 and the sealing cap 6.
また図中８は、その−面側に発光素子９及びこれの発光
回路等を構成する種々の回路部品１．１．１１・・・を
搭載してなるマザーボードである。このマザーボード８
の前記−面には、該マザーボード８と、受光素子３を前
述の如く実装してなる回路基板ｌとを電気的に接続する
と共に、該回路基板１を支持するための複数の取付リー
ド１２． ！２・・・が立設してあり、回路基板１は、
その端部の所定位置を取付リード１２．１２・・・の上
部に夫々挾持させて、封止キャップ６の装着面をマザー
ボード８の前記−面と平行をなして対向させると共に、
回路基板１における封止キャップ６の装着位置とマザー
ボード８における前記発光素子９の搭載位置とを平面的
に整合させた態様にて、該マザーボード８の上方に適長
離隔して支持されており、この回路基板１及びマザーボ
ード８は、外箱１３の内部に一体的に収納されて固定さ
れている。また、互いに対向する発光素子９と封止キャ
ップ６との間には、回路基板１及びマザーボード８と略
平行をなして、円板状の遮蔽板７が配してあり、該遮蔽
板７は、その軸心位置に固設され、マザーボード８及び
外箱１３を貫通して延設された駆動軸１４を介して、外
箱１３外部に配した図示しない駆動源に接続してあり、
マザーボード８及び回路基板１と平行な面内において回
転するようになしである。而して、発光素子９から、第
１図中に白抜矢符にて示す方向に発せられる光は、遮蔽
板７の回転位置に応じて、これにより遮蔽されるか又は
これを透過し、透過光が、封止キャップ６及び透過孔２
を経て進行し、該透過孔２に臨ませた受光素子３の受光
部４に照射される。Reference numeral 8 in the figure is a motherboard on which various circuit components 1, 1, 11, etc. constituting the light-emitting element 9 and its light-emitting circuit are mounted on its negative side. This motherboard 8
A plurality of mounting leads 12. are provided on the - side for electrically connecting the motherboard 8 and the circuit board 1 on which the light receiving element 3 is mounted as described above, and for supporting the circuit board 1. ! 2... are installed upright, and the circuit board 1 is
The predetermined positions of the ends thereof are held in the upper parts of the mounting leads 12, 12, respectively, so that the mounting surface of the sealing cap 6 is parallel to and opposite to the negative surface of the motherboard 8,
It is supported at an appropriate distance above the motherboard 8 in such a manner that the mounting position of the sealing cap 6 on the circuit board 1 and the mounting position of the light emitting element 9 on the motherboard 8 are aligned in a plane, The circuit board 1 and the motherboard 8 are integrally housed and fixed inside the outer box 13. Further, between the light emitting element 9 and the sealing cap 6 that face each other, a disc-shaped shielding plate 7 is disposed approximately parallel to the circuit board 1 and the motherboard 8. , is connected to a drive source (not shown) disposed outside the outer case 13 via a drive shaft 14 that is fixed at the axial center position and extends through the motherboard 8 and the outer case 13.
It is designed to rotate in a plane parallel to the motherboard 8 and the circuit board 1. Thus, the light emitted from the light emitting element 9 in the direction indicated by the white arrow in FIG. The transmitted light passes through the sealing cap 6 and the transmission hole 2.
, and is irradiated onto the light-receiving section 4 of the light-receiving element 3 facing the transmission hole 2 .
さてこのような構成の光検出用半導体装置において、受
光素子３の受光部４とこれへの照射光との間に高い垂直
度を実現することが重要であることは前述した如くであ
る。本発明に係る光検出用半導体装置においては、受光
素子３がフリップチップ法により実装されるから、この
実装の際に受光面４と回路基板１との間に高い平行度を
確保することは容易であり、従って、取付リード１２．
１２・・・によるマザーボード８上への回路基板１の支
持に際し、両者の平行度の確保に留意することにより、
前記垂直度を高めることができる。また受光部４と発光
素子９との近接を制限するものは、第１図から明らかな
如く、回路基板１及び鵡蔽板７の厚さのみであり、これ
らの薄肉化により、受光部４を発光素子９に十分に近付
けることができ、これと前述の如く確保される高い垂直
度とにより、十分な光検出感度が保証される。As described above, in the photodetecting semiconductor device having such a configuration, it is important to realize a high perpendicularity between the light receiving section 4 of the light receiving element 3 and the light irradiated thereon. In the photodetecting semiconductor device according to the present invention, since the light receiving element 3 is mounted by the flip-chip method, it is easy to ensure high parallelism between the light receiving surface 4 and the circuit board 1 during this mounting. Therefore, the mounting lead 12.
12... When supporting the circuit board 1 on the motherboard 8, by paying attention to ensuring parallelism between the two,
The verticality can be increased. Furthermore, as is clear from FIG. 1, the only thing that limits the proximity of the light receiving section 4 and the light emitting element 9 is the thickness of the circuit board 1 and the shielding plate 7. The closeness to the light emitting element 9 and the high perpendicularity ensured as described above ensure sufficient light detection sensitivity.
以上詳述した如く本発明に係る光検出用半導体装置にお
いては、回路基板上に実装される受光素子が、該回路基
板を表裏に貫通して形成された透過孔にその受光面を臨
ませ、フリップチップ法により実装されているから、前
記透過孔を透過する光と該光が照射される前記受光面と
の間に、高い垂直度が容易に実現され、また、受光素子
を発光源に十分に近接させることができ、高い光検出感
度が保証される上、装置全体の組立てに際し、温度条件
、洗浄方法等に煩わしい制約がなく、組立て工程の簡略
化が実現される等、本発明は優れた効果を奏する。As detailed above, in the photodetection semiconductor device according to the present invention, the light receiving element mounted on the circuit board has its light receiving surface facing the transmission hole formed by penetrating the circuit board from the front and back, Since it is mounted using the flip-chip method, a high degree of perpendicularity can be easily achieved between the light passing through the transmission hole and the light-receiving surface to which the light is irradiated, and the light-receiving element can be used as a light-emitting source. The present invention has advantages such as ensuring high photodetection sensitivity and simplifying the assembly process by eliminating troublesome restrictions on temperature conditions, cleaning methods, etc. when assembling the entire device. It has a great effect.
第１図は本発明に係る光検出用半導体装置の要部拡大断
面図、第２図はその全体構成を示す断面図、第３図は従
来の光検出用半導体装置の要部拡大断面図である。
１・・・回路基板 ２・・・透過孔 ３・・・受光素
子４・・・受光部
なお、図中、同一符号は同一、又は相当部分を示す。
代理人 大 岩 増 雄
２・・・透過孔
３・・・受光素子
４・・・受光部
第１図
第２図
第３図
騙１．９□Ｔ１８
特許庁長官数
。
１、事件の表示 特願昭６３−２２９２１０号
〔２、発明の名称
〔
光検出用半導体装置
３、補正をする者
〔
５、補正の対象
明細書の「特許請求の範囲」及び「発明の詳細な説明」
の欄並びに図面
６、補正の内容
ｉ−１明細書の「特許請求の範囲」の欄別紙の通り
ｉ−２明細書の「発明の詳細な説明」の欄明細書第２頁
第３行目に「−例に開口部を」とちるのを「一部に開口
部を」と訂正する。
ｉ−３図面
第３図を添付図面の如く訂正する。
７、添付書類の目録
ｌ）補正後の特許請求の範囲の全文を記載した書面
１通
２）訂正図面 １通
補正後の特許請求の範囲の全文を記載した書面２、特許
請求の範囲
１、 回路基板上に実装された受光素子への照射光を検
出する光検出用半導体装置において、前記回路基板を表
裏に貫通して形成された前記照射光の透過孔を備え、
前記受光素子は、その受光部を前記透過孔に臨ませ、フ
リップチップ法により実装して屋ることを特徴とする光
検出用半導体装置。
第３図FIG. 1 is an enlarged cross-sectional view of a main part of a semiconductor device for photodetection according to the present invention, FIG. 2 is a cross-sectional view showing its overall configuration, and FIG. 3 is an enlarged cross-sectional view of a main part of a conventional semiconductor device for photodetection. be. DESCRIPTION OF SYMBOLS 1... Circuit board 2... Transmission hole 3... Light receiving element 4... Light receiving part Note that in the drawings, the same reference numerals indicate the same or corresponding parts. Agent Masu Oiwa 2...Transmission hole 3...Light-receiving element 4...Light-receiving part Figure 1 Figure 2 Figure 3 1.9□T18 Number of Commissioner of the Japan Patent Office
. 1. Display of the incident Patent Application No. 1983-229210
[2. Title of the invention [Semiconductor device for photodetection 3] Person making the amendment [5. “Claims” and “Detailed description of the invention” of the specification to be amended
Column , Drawing 6, Contents of Amendment i-1 Specification's "Claims" column As attached, i-2 Specification's "Detailed Description of the Invention" column Page 2, Line 3 of the specification ``-Example: opening'' should be corrected to ``partial opening''. Figure 3 of the i-3 drawing is corrected as shown in the attached drawing. 7. List of attached documents l) Document stating the entire text of the amended scope of claims
1 copy 2) Corrected drawings 1 copy Document stating the full text of the amended claims 2, Claim 1, Photodetection semiconductor device for detecting light irradiated onto a light-receiving element mounted on a circuit board The circuit board is provided with a transmission hole for the irradiation light formed through the front and back sides, and the light receiving element is mounted by a flip-chip method with its light receiving part facing the transmission hole. Features of a semiconductor device for photodetection. Figure 3
Claims (1)
する光検出用半導体装置において、前記回路基板を表裏
に貫通して形成された 前記照射光の透過孔を備え、 前記受光素子は、その受光部を前記透過孔 に臨ませ、フリップチップ法により実装してあることを
特徴とする光検出用半導体装置。[Scope of Claims] 1. In a photodetecting semiconductor device that detects irradiated light to a light receiving element mounted on a circuit board, a transmission hole for the irradiated light formed by penetrating the circuit board from the front and back sides. A semiconductor device for photodetection, characterized in that the light-receiving element is mounted by a flip-chip method with its light-receiving portion facing the transmission hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63229210A JPH0277171A (en) | 1988-09-13 | 1988-09-13 | Semiconductor device for photodetection use |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63229210A JPH0277171A (en) | 1988-09-13 | 1988-09-13 | Semiconductor device for photodetection use |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0277171A true JPH0277171A (en) | 1990-03-16 |
Family
ID=16888546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63229210A Pending JPH0277171A (en) | 1988-09-13 | 1988-09-13 | Semiconductor device for photodetection use |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0277171A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5867368A (en) * | 1997-09-09 | 1999-02-02 | Amkor Technology, Inc. | Mounting for a semiconductor integrated circuit device |
| US5949655A (en) * | 1997-09-09 | 1999-09-07 | Amkor Technology, Inc. | Mounting having an aperture cover with adhesive locking feature for flip chip optical integrated circuit device |
| US6448635B1 (en) | 1999-08-30 | 2002-09-10 | Amkor Technology, Inc. | Surface acoustical wave flip chip |
-
1988
- 1988-09-13 JP JP63229210A patent/JPH0277171A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5867368A (en) * | 1997-09-09 | 1999-02-02 | Amkor Technology, Inc. | Mounting for a semiconductor integrated circuit device |
| US5949655A (en) * | 1997-09-09 | 1999-09-07 | Amkor Technology, Inc. | Mounting having an aperture cover with adhesive locking feature for flip chip optical integrated circuit device |
| US6448635B1 (en) | 1999-08-30 | 2002-09-10 | Amkor Technology, Inc. | Surface acoustical wave flip chip |
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