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JPH0267559A - Interference exposure device - Google Patents

Interference exposure device

Info

Publication number
JPH0267559A
JPH0267559A JP63221109A JP22110988A JPH0267559A JP H0267559 A JPH0267559 A JP H0267559A JP 63221109 A JP63221109 A JP 63221109A JP 22110988 A JP22110988 A JP 22110988A JP H0267559 A JPH0267559 A JP H0267559A
Authority
JP
Japan
Prior art keywords
liquid
lens
luminous fluxes
pitch
refractive index
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63221109A
Other languages
Japanese (ja)
Inventor
Yoshihiro Kokubo
小久保 吉裕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP63221109A priority Critical patent/JPH0267559A/en
Publication of JPH0267559A publication Critical patent/JPH0267559A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70408Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To eliminate the necessity of a mobile section to be used for making light beam to perpendicularly incident on a liquid by providing a spherical lens having the same refractive index as that of a liquid above the liquid in which a wafer is dipped. CONSTITUTION:The laser beam emitted from an ultraviolet laser 1 is divided into two direction by means of a beam splitter 4 while the beam is expanded in cross section by means of a lens 3a after the beam is reflected by a mirror 2. The luminous fluxes 6 divided in the two directions are reflected by mirrors 5a and 5b and made incident on a spherical lens 11 having the same refractive index as that of a liquid 8. The luminous fluxes made incident on the lens 11 become parallel beam and irradiate a water 7 in the liquid 8 from two directions. Since the interference in the liquid 8 is reduced to 1/n (n: refractive index of liquid 8) in pitch as compared with a free space, a very short-pitch interference can be obtained. Moreover, since the pitch is changed, the luminous fluxes 6 are surely made perpendicularly incident on the lens 11 even when the angles of the luminous fluxes 6 are changed by moving the mirrors 5a and 5b. Therefore, the mobile section for making the luminous fluxes perpendicularly incident on the liquid 8 becomes unnecessary.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、光の干渉を利用して特定のピッチの明暗の
縞をフォトレジストに感光させる干渉露光装置に関する
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an interference exposure apparatus that uses light interference to expose a photoresist to light and dark stripes at a specific pitch.

〔従来の技術〕[Conventional technology]

第2図は従来の短いピッチを切る干渉露光装置を示す模
式断面図である。図において、filは光源となる紫外
線レーザ、(21、(sa)、(sb)はミラー(3a
)、(3b)はレンズ、(4)はビームスプリッタ、(
6)は光束、(7)は露光されるフォトレジストが塗布
されたウェハ、(8)はフォトレジストを侵さないよう
な液体で例えば水、 (9a)、(9b)は液体(8)
を押し除けるための枠、(10す、(xob)は光束(
6)が大気中から液体(8)に垂直に入射するように取
り付けた光透過窓である。
FIG. 2 is a schematic cross-sectional view showing a conventional interference exposure apparatus for cutting short pitches. In the figure, fil is an ultraviolet laser serving as a light source, (21, (sa), (sb) are mirrors (3a
), (3b) is a lens, (4) is a beam splitter, (
6) is a light beam, (7) is a wafer coated with photoresist to be exposed, (8) is a liquid that does not attack the photoresist, such as water, (9a) and (9b) is a liquid (8)
The frame for pushing away (10s, (xob) is the luminous flux (
6) is a light transmitting window installed so that the liquid (8) is perpendicularly incident from the atmosphere.

次に動作について説明する。紫外線レーザ(11から出
射した光は、ミラー(2]で反射され、レンズ(3a)
、(3b)を通過することによりビームの径が広げられ
、ビームスブリック(4)で2方回に分割される。更1
7: < 5− (5a)、(5b)で反射さ第1′C
1光束(6)はウェハ(”、) ニ2 方向から照射し
、フォトレジストを感光する。このとき、液体(8)の
屈折率11は1より大きいので、液体(8)中での光束
(6)の波長は、大気中に比べて1/nに短くなる。し
たがって、大気中で露光する場合に比べて、1/n倍の
短い周期でフォトレジストを感光させることができる。
Next, the operation will be explained. The light emitted from the ultraviolet laser (11) is reflected by the mirror (2) and passes through the lens (3a).
, (3b), the diameter of the beam is expanded, and the beam is divided into two beams by the beam brick (4). Further 1
7: < 5- 1'C reflected by (5a), (5b)
1 The light beam (6) is irradiated from the wafer ('',) 2 direction and exposes the photoresist.At this time, since the refractive index 11 of the liquid (8) is greater than 1, the light beam (6) in the liquid (8) is The wavelength of 6) is 1/n shorter than that in the atmosphere.Therefore, the photoresist can be exposed at a cycle 1/n times shorter than in the case of exposure in the atmosphere.

このとき、液体(8)を押し除ける枠(9す、(9b)
に付属している光透過窓(10す、(xob)は光束(
6)に対して常に垂直になるようにしてあり、光束(6
)の進行方向を大気と液体(8)の境界で変えないよう
になっている。
At this time, the frame (9s, (9b)) that can push out the liquid (8)
The light transmission window (10s, (xob) attached to the
It is always perpendicular to the luminous flux (6).
) so that the direction of movement of the liquid (8) does not change at the boundary between the atmosphere and the liquid (8).

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかしながら、従来の短いピッチを切る干渉露光装置は
、光透過窓(1oa)、(1ob)が常に光束(6)ト
直交するように位置する必要があり、ピッチを変えるた
めにミラー(5λ)、(5b)を回転させると、それに
応じて液体(8)を押し除ける枠(91)、(9b)も
移動させなけわばならなかった。
However, in the conventional interference exposure apparatus that cuts a short pitch, it is necessary to position the light transmission windows (1OA) and (1OB) so that they are always orthogonal to the light beam (6), and in order to change the pitch, a mirror (5λ), When (5b) was rotated, the frames (91) and (9b) for pushing away the liquid (8) had to be moved accordingly.

この発明は上記のような問題点を解消するためになされ
たもので、通常の干渉露光装置程度の可動部分があれば
露光できる装置を得ることを目的とする。
The present invention was made to solve the above-mentioned problems, and an object of the present invention is to provide an apparatus that can perform exposure with only a movable part comparable to that of a normal interference exposure apparatus.

〔課題を解決するための手段〕[Means to solve the problem]

この発明に係る干渉露光装置は、クエへを浸した液体の
上部に、その液体と同じ屈折率を有する球状のレンズを
設けたものである。
The interference exposure apparatus according to the present invention has a spherical lens having the same refractive index as the liquid above the liquid in which the liquid is immersed.

〔作 用〕[For production]

この発明における球状のレンズは、ウェハに光束がどの
方向から入射しても、その進行方向は、大気からとレン
ズに入射してからとで変化しないようになっている。ま
た1球状レンズの効果を利用して集光も行う。
The spherical lens of the present invention is such that no matter which direction the light beam enters the wafer, its traveling direction does not change between from the atmosphere and after it enters the lens. It also collects light by utilizing the effect of a single spherical lens.

〔実施例〕〔Example〕

以下、この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.

第1図は干渉露光装置を示す模式断面図である。FIG. 1 is a schematic cross-sectional view showing an interference exposure apparatus.

図において、(1)〜(3す、(4)〜(8)は第2図
の従来例に示したものと同等であるので説明を省略する
In the figure, (1) to (3) and (4) to (8) are the same as those shown in the conventional example of FIG. 2, so their explanation will be omitted.

αυは球状の固体で、例えばガラス又は球状の外殻例え
ば、ガラスでおおった液体列えば、水から成るレンズで
ある。
αυ is a spherical solid, for example a lens made of glass or a spherical shell, such as a glass-covered liquid column, eg water.

久に動作について説明する。紫外線レーザ(1)から出
射した光は、ミラー(2)で反射され、レンズ(3りを
違った後にビームが広がりながらビームスプリッタ(4
)で2方向lζ分割されるc、2方向に分割された光束
(6)はミラー(sa)、(5b)で反射され、レンズ
αυに入射して平行光線になり、2方向からウェハ(7
)に液体(8)の中で照射する。このとき、干渉は自由
空間に比べて液体(8)中ではピッチが1/n(nは液
体(8)の屈折率)になるので、非常に短ピツチの干渉
 を得ることができる。また、ピッチを変えるために、
ミラー(5a)、(5b)を動かし光束(6)の角度を
変えても、レンズ(9)に必ず垂直に入射するので、従
来の露光装置のように液体(8)に垂直に入射させるた
めの可動部分を必要としない。
I will explain the operation shortly. The light emitted from the ultraviolet laser (1) is reflected by the mirror (2), and after passing through the lens (3), the beam spreads and passes through the beam splitter (4).
), the light beam (6) is reflected by the mirrors (sa) and (5b), enters the lens αυ, becomes a parallel ray, and hits the wafer (7) from two directions.
) in liquid (8). At this time, the pitch of interference in the liquid (8) is 1/n (n is the refractive index of the liquid (8)) compared to that in free space, so it is possible to obtain interference with a very short pitch. Also, to change the pitch,
Even if the angle of the light beam (6) is changed by moving the mirrors (5a) and (5b), it will always enter the lens (9) perpendicularly. does not require any moving parts.

〔発明の効果〕〔Effect of the invention〕

以上のように、この発明によれば液体に光が入射する部
分をレンズ状にしたので、可動部分が一部省略でき、ま
た他のレンズが一枚省略可能で、装置が安価にできる効
果がある。
As described above, according to the present invention, since the part where light enters the liquid is made into a lens shape, some movable parts can be omitted, and one lens can be omitted, which has the effect of making the device cheaper. be.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の一実施例による干渉露光装置を示す
模式断面図、第2図は従来の干渉露光装置を示す模式断
面図である。図において(1)は紫外線レーザ、(2J
、(5す、(5b)はミy −(3a)*(11) j
! L/ンズ、(4)はビームスプリッタ、(6)は光
束、(7)はウェハ、(81は液体、(51り、(9b
)は枠、(10す、(xob)は光透過窓である。なお
図中、同一符号は同−又は相当部分を示す。 I紫外線」−ブ 2、5a、5b:ミラー 3a、III/ン又 チに一瓜又フ゛ソッタ ≦tL 7ウエハ It:”7資:イ本
FIG. 1 is a schematic sectional view showing an interference exposure apparatus according to an embodiment of the present invention, and FIG. 2 is a schematic sectional view showing a conventional interference exposure apparatus. In the figure, (1) is an ultraviolet laser, (2J
, (5s, (5b) is mi y - (3a) * (11) j
! (4) is a beam splitter, (6) is a luminous flux, (7) is a wafer, (81 is a liquid, (51 is a liquid, (9b) is
) is a frame, (10, (xob) is a light transmitting window. In the figures, the same reference numerals indicate the same or corresponding parts. 7 wafers It: 7 wafers

Claims (1)

【特許請求の範囲】[Claims] 液体中で露光する干渉露光装置において、大気中から上
記液体中へ紫外線が入射する境界面を、球状に構成した
ことを特徴とする干渉露光装置。
An interference exposure apparatus that performs exposure in a liquid, characterized in that a boundary surface through which ultraviolet light enters the liquid from the atmosphere is configured in a spherical shape.
JP63221109A 1988-09-01 1988-09-01 Interference exposure device Pending JPH0267559A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63221109A JPH0267559A (en) 1988-09-01 1988-09-01 Interference exposure device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63221109A JPH0267559A (en) 1988-09-01 1988-09-01 Interference exposure device

Publications (1)

Publication Number Publication Date
JPH0267559A true JPH0267559A (en) 1990-03-07

Family

ID=16761623

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63221109A Pending JPH0267559A (en) 1988-09-01 1988-09-01 Interference exposure device

Country Status (1)

Country Link
JP (1) JPH0267559A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006210923A (en) * 2005-01-26 2006-08-10 Taiwan Semiconductor Manufacturing Co Ltd System and method for producing a pattern on a substrate
JP2007324590A (en) * 2006-05-31 2007-12-13 Asml Holding Nv System and method for printing interference pattern having pitch in lithography system
US11131929B2 (en) * 2018-11-07 2021-09-28 Waymo Llc Systems and methods that utilize angled photolithography for manufacturing light guide elements
US11131934B2 (en) 2019-10-29 2021-09-28 Waymo Llc Non-telecentric light guide elements

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8110345B2 (en) 2002-12-04 2012-02-07 Taiwan Semiconductor Manufacturing Company, Ltd. High resolution lithography system and method
JP2006210923A (en) * 2005-01-26 2006-08-10 Taiwan Semiconductor Manufacturing Co Ltd System and method for producing a pattern on a substrate
JP2007324590A (en) * 2006-05-31 2007-12-13 Asml Holding Nv System and method for printing interference pattern having pitch in lithography system
US8934084B2 (en) 2006-05-31 2015-01-13 Asml Holding N.V. System and method for printing interference patterns having a pitch in a lithography system
US11131929B2 (en) * 2018-11-07 2021-09-28 Waymo Llc Systems and methods that utilize angled photolithography for manufacturing light guide elements
US11994802B2 (en) 2018-11-07 2024-05-28 Waymo Llc Systems and methods that utilize angled photolithography for manufacturing light guide elements
US11131934B2 (en) 2019-10-29 2021-09-28 Waymo Llc Non-telecentric light guide elements
US11520236B2 (en) 2019-10-29 2022-12-06 Waymo Llc Non-telecentric light guide elements
US11868050B2 (en) 2019-10-29 2024-01-09 Waymo Llc Non-telecentric light guide elements
US12174547B2 (en) 2019-10-29 2024-12-24 Waymo Llc Non-telecentric light guide elements

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