JPH0237112B2 - - Google Patents
Info
- Publication number
- JPH0237112B2 JPH0237112B2 JP56105934A JP10593481A JPH0237112B2 JP H0237112 B2 JPH0237112 B2 JP H0237112B2 JP 56105934 A JP56105934 A JP 56105934A JP 10593481 A JP10593481 A JP 10593481A JP H0237112 B2 JPH0237112 B2 JP H0237112B2
- Authority
- JP
- Japan
- Prior art keywords
- diffusion layer
- protection
- transistor
- gate
- breakdown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000009792 diffusion process Methods 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 4
- 230000015556 catabolic process Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 239000000758 substrate Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 3
- 238000001947 vapour-phase growth Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 208000033999 Device damage Diseases 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
Landscapes
- Amplifiers (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Protection Of Static Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56105934A JPS587870A (ja) | 1981-07-07 | 1981-07-07 | 半導体集積回路装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56105934A JPS587870A (ja) | 1981-07-07 | 1981-07-07 | 半導体集積回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS587870A JPS587870A (ja) | 1983-01-17 |
| JPH0237112B2 true JPH0237112B2 (it) | 1990-08-22 |
Family
ID=14420673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56105934A Granted JPS587870A (ja) | 1981-07-07 | 1981-07-07 | 半導体集積回路装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS587870A (it) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03127695U (it) * | 1990-04-03 | 1991-12-24 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04100106U (it) * | 1991-02-12 | 1992-08-28 | ||
| EP0562352B1 (en) * | 1992-03-26 | 1998-02-18 | Texas Instruments Incorporated | High voltage structures with oxide isolated source and RESURF drift region in bulk silicon |
-
1981
- 1981-07-07 JP JP56105934A patent/JPS587870A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03127695U (it) * | 1990-04-03 | 1991-12-24 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS587870A (ja) | 1983-01-17 |
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