JPH0237108B2 - - Google Patents
Info
- Publication number
- JPH0237108B2 JPH0237108B2 JP55042212A JP4221280A JPH0237108B2 JP H0237108 B2 JPH0237108 B2 JP H0237108B2 JP 55042212 A JP55042212 A JP 55042212A JP 4221280 A JP4221280 A JP 4221280A JP H0237108 B2 JPH0237108 B2 JP H0237108B2
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- transistor
- section
- thin film
- conversion element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000006243 chemical reaction Methods 0.000 claims description 54
- 239000010409 thin film Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 11
- 230000002265 prevention Effects 0.000 claims description 9
- 239000000463 material Substances 0.000 description 11
- 239000003990 capacitor Substances 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 238000000034 method Methods 0.000 description 5
- 108091008695 photoreceptors Proteins 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 2
- 229910052986 germanium hydride Inorganic materials 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910017817 a-Ge Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- UNQHSZOIUSRWHT-UHFFFAOYSA-N aluminum molybdenum Chemical compound [Al].[Mo] UNQHSZOIUSRWHT-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/04—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa
- H04N1/19—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa using multi-element arrays
- H04N1/191—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa using multi-element arrays the array comprising a one-dimensional array, or a combination of one-dimensional arrays, or a substantially one-dimensional array, e.g. an array of staggered elements
- H04N1/192—Simultaneously or substantially simultaneously scanning picture elements on one main scanning line
- H04N1/193—Simultaneously or substantially simultaneously scanning picture elements on one main scanning line using electrically scanned linear arrays, e.g. linear CCD arrays
- H04N1/1938—Details of the electrical scanning
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/04—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa
- H04N1/19—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa using multi-element arrays
- H04N1/191—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa using multi-element arrays the array comprising a one-dimensional array, or a combination of one-dimensional arrays, or a substantially one-dimensional array, e.g. an array of staggered elements
- H04N1/192—Simultaneously or substantially simultaneously scanning picture elements on one main scanning line
- H04N1/193—Simultaneously or substantially simultaneously scanning picture elements on one main scanning line using electrically scanned linear arrays, e.g. linear CCD arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/191—Photoconductor image sensors
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Facsimile Heads (AREA)
Description
【発明の詳細な説明】
本発明は、光電変換装置、殊にフアクシミリ、
デジタルコピア、レーザ記録装置等の光情報入力
部、バーコード読取装置やその他の文字や画像等
の読取装置等々に適用される固体化された光電変
換装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a photoelectric conversion device, particularly a facsimile,
The present invention relates to a solid-state photoelectric conversion device that is applied to optical information input units such as digital copiers and laser recording devices, barcode readers, and other character and image reading devices.
最近、装置全体の小型指向から、フアクシミリ
やデジタルコピア、レーザ記録装置等の光情報入
力部、或いはその他の、原稿に書かれた文字や像
を読取る装置に適用される光電変換装置として再
生される原画像のサイズに相等しいか若しくはそ
れに近いサイズの受光面を有し、且つ解像性に優
れ、原画像を忠実に読取り得、然もコンパクトな
所謂長尺化された受光面を有する光電変換装置の
開発の進展が著しい。 Recently, due to the trend toward smaller overall devices, photoelectric conversion devices have been used as optical information input units of facsimile machines, digital copiers, laser recording devices, and other devices that read characters and images written on manuscripts. A photoelectric conversion device that has a light-receiving surface that is equal to or close to the size of the original image, has excellent resolution, can faithfully read the original image, and is compact and has a so-called elongated light-receiving surface. There has been significant progress in the development of equipment.
而乍ら、上記の様な長尺化された受光面を有す
る光電変換装置は、具備される光電変換部に附随
する信号処理回路部に大きな問題がある。 However, the photoelectric conversion device having the elongated light-receiving surface as described above has a major problem in the signal processing circuit section attached to the photoelectric conversion section.
即ち、前記信号処理回路部が光電変換部に較べ
て非常に大きなスペースを占め、光電変換部を長
尺化することで光路長を非常に短かくすることが
出来ることにより生じた小型化の利点を生かし切
れないという点である。 That is, the signal processing circuit section occupies a much larger space than the photoelectric conversion section, and by making the photoelectric conversion section longer, the optical path length can be made very short, which is an advantage of miniaturization. The point is that it cannot be fully utilized.
通常この問題点を解決するための一手段として
光電変換部の画素（光電変換要素）群を複数個に
ブロツク化して各ブロツクをマトリクス配線し、
１ブロツク毎にこの信号処理回路部を動作させる
方式が取られる。 Normally, one way to solve this problem is to divide the pixels (photoelectric conversion elements) of the photoelectric conversion unit into multiple blocks and wire each block in a matrix.
A method is adopted in which this signal processing circuit section is operated for each block.
ここで、このマトリクス配線において問題とな
るのは光電変換要素と信号処理部を接続し外部に
信号を取り出すために、ボンデイング工程が必要
であるが、光電変換要素と信号処理部を一体化し
なければ、このボンデイング工程が極端に多くな
ることである。 The problem with this matrix wiring is that a bonding process is required to connect the photoelectric conversion element and the signal processing section and take out the signal to the outside, but the photoelectric conversion element and the signal processing section must be integrated. , the number of bonding steps becomes extremely large.
通常この問題点を解決するために、結晶Si基板
上に信号処理部を設け、その上に、光電変換部を
作製し、一体化を計つている。 Normally, to solve this problem, a signal processing section is provided on a crystalline Si substrate, and a photoelectric conversion section is fabricated and integrated on top of the signal processing section.
しかしながら、長尺化された受光面をもたせる
ため長尺な光電変換部に隣接した信号処理部を設
ける必要がありこの要求に対して結晶基板を用い
ることは充分答えるものではない。 However, in order to provide an elongated light-receiving surface, it is necessary to provide a signal processing section adjacent to the elongated photoelectric conversion section, and the use of a crystal substrate does not fully meet this requirement.
本発明は上記の点に鑑みて成されたものであつ
て、従来の光電変換装置の改良を計ることを目的
とし、又無欠陥で長尺な充電変換装置を提供する
ことを目的とする。 The present invention has been made in view of the above points, and aims to improve conventional photoelectric conversion devices, and also to provide a defect-free and long charging conversion device.
本発明の光電変換装置は受光面を有する光電変
換要素のＮ個が配されている光電変換部：前記光
電変換要素により光電変換された信号を蓄積する
蓄積手段；クロストーク防止用ダイオード；トラ
ンジスター；により構成される信号処理回路部：
が同一基板上に具備され、前記光電変換要素、前
記クロストーク防止用ダイオード及び前記トラン
ジスターの各半導体部が半導体薄膜で構成される
とともに前記蓄積手段と前記トランジスターとの
共有されている絶縁層を有することを特徴とす
る。 The photoelectric conversion device of the present invention includes a photoelectric conversion section in which N photoelectric conversion elements each having a light-receiving surface are arranged: a storage means for accumulating a signal photoelectrically converted by the photoelectric conversion elements; a crosstalk prevention diode; a transistor; Signal processing circuit section consisting of:
are provided on the same substrate, and each semiconductor portion of the photoelectric conversion element, the crosstalk prevention diode, and the transistor is composed of a semiconductor thin film, and has an insulating layer shared by the storage means and the transistor. It is characterized by
以下、本発明を図面に従つて説明する。 The present invention will be explained below with reference to the drawings.
第１図には、本発明の光電変換装置の等価回路
が示される。この光電変換装置はＮ個の光電変換
要素PE１，PE２，…，PEN、各光電変換要素
PEの出力信号を蓄積する蓄積手段としてのコン
デンサーCE１，CE２，…，CEN、クロストーク
防止用ダイオードＤ１，Ｄ２，…，DN、及び蓄
積コンデンサーに貯えられた電荷を出力端子
OUTに順次転送するための転送用トランジスタ
ーSW１，SW２，…，SWNにより構成される。 FIG. 1 shows an equivalent circuit of the photoelectric conversion device of the present invention. This photoelectric conversion device has N photoelectric conversion elements PE1, PE2,..., PEN, each photoelectric conversion element
Capacitors CE1, CE2, ..., CEN as storage means for storing the output signal of PE, diodes D1, D2, ..., DN for crosstalk prevention, and the output terminal for the electric charge stored in the storage capacitor.
It is composed of transfer transistors SW1, SW2, ..., SWN for sequentially transferring data to OUT.
Ｎ個の光電変換要素の一方の電極は、それぞれ
蓄積コンデンサーと、クロストーク防止用ダイオ
ードのアノード電極に接続される。蓄積コンデン
サーの対極はすべて接地され、クロストーク防止
用ダイオードのカソード電極は、それぞれ転送用
トランジスターのドレイン電極に接地される。 One electrode of the N photoelectric conversion elements is connected to a storage capacitor and an anode electrode of a crosstalk prevention diode, respectively. The counter electrodes of the storage capacitors are all grounded, and the cathode electrodes of the crosstalk prevention diodes are respectively grounded to the drain electrodes of the transfer transistors.
光電変換要素のもう一方の電極はＭ個おきに接
続され、Ｍ本の信号線にまとめられる。この信号
線をブロツク選択線と呼ぶ。 The other electrodes of the photoelectric conversion elements are connected every M and are combined into M signal lines. This signal line is called a block selection line.
転送用トランジスターSWのソース電極はすべ
て出力端子OUTに接続される。転送用トランジ
スターSWのゲート電極はそれぞれＭ個のゲート
電極に共通に接続されたＬ本の信号線にまとめら
れる。この信号線をゲート選択線と呼ぶ。 The source electrodes of the transfer transistors SW are all connected to the output terminal OUT. The gate electrodes of the transfer transistors SW are grouped into L signal lines that are commonly connected to M gate electrodes. This signal line is called a gate selection line.
光電変換部に入射された光情報は、ブロツク選
択線により駆動される光電変換要素の出力がゲー
ト選択線により選択された転送用トランジスター
SWを通つて出力端子OUTに出力される。 The optical information incident on the photoelectric conversion section is transferred to the transfer transistor whose output of the photoelectric conversion element driven by the block selection line is selected by the gate selection line.
It is output to the output terminal OUT through SW.
第２図には第１図に示す本発明の光電変換装置
の駆動のタイミングチヤートが示される。 FIG. 2 shows a timing chart for driving the photoelectric conversion device of the present invention shown in FIG.
ブロツク選択信号Ｄ１，Ｄ２，…，DM、の駆
動周波数はゲート選択信号Ｇ１，Ｇ２，…，GL、
の駆動周波数に対し、通常Ｍ倍とされる。 The driving frequency of the block selection signals D1, D2, ..., DM is determined by the gate selection signals G1, G2, ..., GL,
It is usually set to M times the driving frequency of .
光電変換部に入射した光情報は光電変換要素の
抵抗を変化させ、ブロツク選択信号Ｄのクロツク
によりそれぞれの蓄積コンデンサーCEに充電さ
れる。蓄積コンデンサーCEに貯えられた電荷は
ゲート選択信号Ｇにより導通状態となつた転送用
トランジスターにより選択信号クロツクに従つて
順次出力される。 The optical information incident on the photoelectric conversion section changes the resistance of the photoelectric conversion element, and is charged into each storage capacitor CE by the clock of the block selection signal D. The charges stored in the storage capacitor CE are sequentially outputted by the transfer transistor turned on by the gate selection signal G in accordance with the selection signal clock.
この光電変換装置における、光電変換要素、転
送用トランジスター、及びクロストーク防止用ダ
イオードはすべて半導体薄膜により同一基板上に
構成される。 In this photoelectric conversion device, the photoelectric conversion element, the transfer transistor, and the crosstalk prevention diode are all formed of a semiconductor thin film on the same substrate.
光電変換装置PEを構成する光受容体層は、例
えば、アモルフアス水素化シリコン（ａ−Si：Ｈ
と以後略記する）、PbO、CdSe、Sb2S3、Se、Se
−Te、Se−Te−As、Se−Bi、ZnCdTe、CdS、
Cu2Sアモルフアス水素化ゲルマニウム、アモル
フアス水素化GexSi（１−ｘ）、等の高感度の光導
電材料で構成される。 The photoreceptor layer constituting the photoelectric conversion device PE is made of, for example, amorphous hydrogenated silicon (a-Si:H
), PbO, CdSe, Sb 2 S 3 , Se, Se
−Te, Se−Te−As, Se−Bi, ZnCdTe, CdS,
It is composed of highly sensitive photoconductive materials such as Cu 2 S amorphous germanium hydride, amorphous hydrogenated GexSi (1-x), etc.
薄膜トランジスターSW，Ｓを構成する半導体
薄膜は、例えばCdSe、ａ−Si：Ｈ（アモルフアス
水素化シリコン）、ａ−Ge：Ｈ（アモルフアス水
素化ゲルマニウム）、アモルフアス水素化GexSi
（１−ｘ）、多結晶、或いは結晶シリコン等で構成
される。 The semiconductor thin films constituting the thin film transistors SW and S are, for example, CdSe, a-Si:H (amorphous silicon hydride), a-Ge:H (amorphous germanium hydride), amorphous hydrogenated GexSi
(1-x), polycrystalline, crystalline silicon, or the like.
本発明においては、Ｎ、Ｐ、As、Sb、Bi等の
周期律表第族の元素或いは、Ｂ、Al、Ga、In、
Tl等の周期律表第族Ａの元素を不純物として
ドーピングする事によつてｎ型あるいはｐ型にす
ることが出来ることの利点から、光受容体積及び
薄膜トランジスターをａ−Si：Ｈで形成するのが
好適とされる。 In the present invention, elements of the periodic table group such as N, P, As, Sb, Bi, or B, Al, Ga, In,
The photoreceptor volume and the thin film transistor are formed of a-Si:H because of the advantage that it can be made n-type or p-type by doping with an element of group A of the periodic table such as Tl as an impurity. is considered suitable.
本発明においては、光受容体積の層厚は、光情
報の入射によつて生ずるホトキヤリアの拡散の度
合により決定されるが通常4000Å〜2μｍ、好適
には6000Å〜1.5μｍとされるのが望ましい。又、
薄膜トランジスターの半導体層の層厚は、絶縁層
を介して設けられるゲート電極に印加される電圧
により生じる空乏層領域の層厚よりも薄いことが
望ましく、通常1000Å〜1μｍが好適とされる。 In the present invention, the layer thickness of the photoreceptive volume is determined by the degree of photocarrier diffusion caused by the incidence of optical information, and is usually 4000 Å to 2 μm, preferably 6000 Å to 1.5 μm. or,
The thickness of the semiconductor layer of a thin film transistor is preferably thinner than the thickness of a depletion layer region generated by a voltage applied to a gate electrode provided through an insulating layer, and is usually preferably 1000 Å to 1 μm.
光電変換要素、及び薄膜トランジスターが形成
される基板は、例えば基板側より光電変換素子の
受光面に光情報が入射される場合には、透光性の
材質のものが採用されるが、基板とは反対面上に
形成された光電変換要素側よりその受光面に光情
報が入射される場合には、このような制限は除く
ことが出来る。 The substrate on which the photoelectric conversion element and the thin film transistor are formed is made of a translucent material, for example, when optical information is incident on the light receiving surface of the photoelectric conversion element from the substrate side. This limitation can be removed if optical information is incident on the light receiving surface from the photoelectric conversion element side formed on the opposite surface.
本発明において基板として使用される好適な材
料としては、平面性、表面平滑性、耐熱性、製造
時の諸薬品に対しての耐性に優れたものであれば
通常市販されている或いは入手し得るものの多く
が挙げられる。その様な基板形成材料としては、
具体的に例えば、ガラス、7059番ガラス（ダウコ
ーニング社製）、マグネシア、ベリリア、スピネ
ル、酸化イツトリユウム等の透光性材料、アルミ
ニウムモリブテン、特殊ステンレス鋼（JIS規格
SuS）、タンタル等の非透光性金属材料が挙げら
れる。 Suitable materials to be used as the substrate in the present invention include those that are commercially available or can be obtained as long as they have excellent flatness, surface smoothness, heat resistance, and resistance to various chemicals during manufacturing. Many things can be mentioned. Such substrate forming materials include:
Specifically, examples include glass, No. 7059 glass (manufactured by Dow Corning), translucent materials such as magnesia, beryllia, spinel, and yttrium oxide, aluminum molybdenum, and special stainless steel (JIS standard
Examples include non-transparent metal materials such as SuS) and tantalum.
第３図には、光電変換要素の構造を説明する模
式的斜視図が示される。この実施例では基板材料
としてガラスを用い受光面は基板の光電変換要素
が作られている側に対し、反対側とする。このた
め基板側受光面電極３０２はＮ個の光受容体層に
対し、共通に接続され透光性の材質のものが採用
される。例えばSnO2、ITO（インジウム錫酸化
物）、In2O3等の透光性導電膜が使用される。 FIG. 3 shows a schematic perspective view illustrating the structure of the photoelectric conversion element. In this embodiment, glass is used as the substrate material, and the light receiving surface is on the opposite side of the substrate to the side on which the photoelectric conversion element is formed. For this reason, the substrate-side light-receiving surface electrode 302 is commonly connected to the N photoreceptor layers and is made of a light-transmitting material. For example, a light-transmitting conductive film such as SnO 2 , ITO (indium tin oxide), In 2 O 3 or the like is used.
光受容体層３０３はnon dope、ｎ型或いはｉ
型のａ−Si：Ｈで形成され、受光面側電極３０
２、及び上部画素電極３０５の接合面３０４にお
いてn+型にdopeされる。このn+層３０４は受光
面、及び上部画素電極と光受光体層との間にオー
ミツクな接合をとるために設けられる。 The photoreceptor layer 303 is non-dope, n-type or i
The light-receiving surface side electrode 30 is formed of a-Si:H of type a-Si:H.
2, and the junction surface 304 of the upper pixel electrode 305 is doped to be n + type. This n + layer 304 is provided to establish an ohmic connection between the light receiving surface, the upper pixel electrode, and the photoreceptor layer.
上部上画素電極はAl等の材料が用いられ、蓄
積コンデンサーCE、転送用トランジスターSWに
接続される。 The upper pixel electrode is made of a material such as Al, and is connected to the storage capacitor CE and transfer transistor SW.
蓄積コンデンサーCEは絶縁層３０６の対極す
る電極３０７，３０８により作製される。絶縁層
３０６の材料としては、例えばグロー放電法によ
るSi3N4、スパツター法によるSiO2、CVD法によ
るSiO2等が挙げられ、本発明では半導体膜のａ
−Si：Ｈがグロー放電法で作製しうることからグ
ロー放電法によるSi3N4が好適とされる。 Storage capacitor CE is fabricated by opposite electrodes 307 and 308 of insulating layer 306. Examples of the material for the insulating layer 306 include Si 3 N 4 made by a glow discharge method, SiO 2 made by a sputtering method, and SiO 2 made by a CVD method.
-Si:H can be produced by a glow discharge method, so Si 3 N 4 produced by a glow discharge method is preferred.
第４図には薄膜トランジスターの構造を説明す
る為の模式的斜視図が示される。 FIG. 4 shows a schematic perspective view for explaining the structure of a thin film transistor.
non−dope型、或いはｉ型ａ−Si：Ｈから成る
半導体薄膜層４０４に対し、絶縁層４０２をはさ
んでゲート電極４０３を形成し、半導体薄膜層４
０４の上部にはn+型層４０５をはさんでソース
電極４０６が形成される。ドレイン電極４０７と
半導体層４０４の接合層４０８はクロストーク防
止用ダイオード形成のため半導体層４０４とその
接合面においてシヨツトキー接合となる材料が用
いられる。半導体層がａ−Si：Ｈの場合シヨツト
キー接合を形成する材料としては、Au、Ir、Pt、
Rh、Pb等が挙げられ、本発明ではPtが好適とさ
れる。ドレイン電極４０７はAlが好適とされる。 A gate electrode 403 is formed on a semiconductor thin film layer 404 made of non-dope type or i-type a-Si:H with an insulating layer 402 sandwiched therebetween.
A source electrode 406 is formed on top of 04 with an n + type layer 405 sandwiched therebetween. The bonding layer 408 between the drain electrode 407 and the semiconductor layer 404 is made of a material that forms a Schottky junction with the semiconductor layer 404 at its bonding surface to form a diode for preventing crosstalk. When the semiconductor layer is a-Si:H, the materials that form the Schottky junction include Au, Ir, Pt,
Examples include Rh, Pb, etc., and Pt is preferred in the present invention. The drain electrode 407 is preferably made of Al.
本発明の光電変換装置は、第５図に示されるよ
うに、長尺な基板５０４の上に横一列に並んだＮ
個の光電変換要素５０１、Ｎ個の蓄積コンデンサ
ー５０２、Ｎ個のクロストーク防止用ダイオード
を含む構造を持つ薄膜トランジスター５０３、光
電変換要素側の配線部５０５及びトランジスタ側
配線部５０６により構成される。 As shown in FIG. 5, the photoelectric conversion device of the present invention includes N
The thin film transistor 503 has a structure including N photoelectric conversion elements 501, N storage capacitors 502, N crosstalk prevention diodes, a wiring section 505 on the photoelectric conversion element side, and a wiring section 506 on the transistor side.
第６図には、本発明の装置の構造を説明する為
の模式的斜視図が示される。光電変換要素６０２
の上部電極より、蓄積コンデンサー６０３、及び
蓄積トランジスター６０４のドレイン電極に接続
される。この薄膜トランジスター６０４のドレイ
ン電極にてクロストーク防止用のシヨツトキー・
ダイオードが形成される。薄膜トランジスター６
０４のゲート電極６０５、及びソース電極６０６
は絶縁層６０７を介した２層構成によりマトリク
ス配線される。 FIG. 6 shows a schematic perspective view for explaining the structure of the device of the present invention. Photoelectric conversion element 602
The upper electrode of the storage capacitor 603 and the drain electrode of the storage transistor 604 are connected to each other. A shot key for preventing crosstalk is connected to the drain electrode of this thin film transistor 604.
A diode is formed. thin film transistor 6
04 gate electrode 605 and source electrode 606
are matrix wired in a two-layer configuration with an insulating layer 607 interposed therebetween.
光電変換要素の受光面側電極６０８はITOで形
成され、薄膜トランジスター６０４とは光電変換
要素６０２について反対側の基板上で配像され
る。 The light-receiving surface side electrode 608 of the photoelectric conversion element is formed of ITO, and is arranged on the substrate on the opposite side of the photoelectric conversion element 602 from the thin film transistor 604 .
基板６０１にはガラスが用いられ基板裏面より
光情報が入射される。 Glass is used for the substrate 601, and optical information is incident on the back surface of the substrate.
第１図は本発明の光電変換装置の等価回路を示
す回路図、第２図は本発明の光電変換装置の動作
のタイミングチヤート図、第３図は本発明におけ
る光電変換要素の構造を示す模式的斜視図、第４
図は本発明においては薄膜トランジスターの構造
を示す模式的斜視図、第５図は本発明の装置の構
成を示す概略図、第６図は本発明に係わる配線パ
ターンの一例を示す模式的斜視図である。
FIG. 1 is a circuit diagram showing an equivalent circuit of the photoelectric conversion device of the present invention, FIG. 2 is a timing chart of the operation of the photoelectric conversion device of the present invention, and FIG. 3 is a schematic diagram showing the structure of the photoelectric conversion element in the present invention. perspective view, 4th
The figure is a schematic perspective view showing the structure of a thin film transistor according to the present invention, FIG. 5 is a schematic diagram showing the structure of a device according to the present invention, and FIG. 6 is a schematic perspective view showing an example of a wiring pattern according to the present invention. It is.
Claims (1)
ている光電変換部： 前記光電変換要素により光電変換された信号を
蓄積する蓄積手段；クロストーク防止用ダイオー
ド；トランジスター；により構成される信号処理
回路部： が同一基板上に具備され、 前記光電変換要素、前記クロストーク防止用ダ
イオード及び前記トランジスターの各半導体部が
半導体薄膜で構成されるとともに前記蓄積手段と
前記トランジスターとに共有されている絶縁層を
有することを特徴とする光電変換装置。[Claims] 1. A photoelectric conversion section in which N photoelectric conversion elements each having a light-receiving surface are arranged: a storage means for accumulating a signal photoelectrically converted by the photoelectric conversion elements; a crosstalk prevention diode; a transistor; A signal processing circuit section constituted by: is provided on the same substrate, each semiconductor section of the photoelectric conversion element, the crosstalk prevention diode, and the transistor is constituted by a semiconductor thin film, and the storage means and the transistor A photoelectric conversion device characterized by having an insulating layer shared by.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4221280A JPS56138968A (en) | 1980-03-31 | 1980-03-31 | Photoelectric converter |
| DE19813112907 DE3112907A1 (en) | 1980-03-31 | 1981-03-31 | "PHOTOELECTRIC SOLID BODY CONVERTER" |
| US06/558,573 US4461956A (en) | 1980-03-31 | 1983-12-06 | Solid-state photoelectric converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4221280A JPS56138968A (en) | 1980-03-31 | 1980-03-31 | Photoelectric converter |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1343680A Division JPH0612812B2 (en) | 1989-12-29 | 1989-12-29 | Photoelectric conversion device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56138968A JPS56138968A (en) | 1981-10-29 |
| JPH0237108B2 true JPH0237108B2 (en) | 1990-08-22 |
Family
ID=12629715
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4221280A Granted JPS56138968A (en) | 1980-03-31 | 1980-03-31 | Photoelectric converter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56138968A (en) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6064467A (en) * | 1983-09-20 | 1985-04-13 | Seiko Epson Corp | solid state image sensor |
| JPS6129170A (en) * | 1984-07-19 | 1986-02-10 | Canon Inc | Photo sensor and its manufacturing method |
| JPS6139572A (en) * | 1984-07-31 | 1986-02-25 | Canon Inc | Image reading device |
| JPS6139570A (en) * | 1984-07-31 | 1986-02-25 | Canon Inc | Long image sensor unit |
| JPS6139571A (en) * | 1984-07-31 | 1986-02-25 | Canon Inc | Image reading device |
| JPS6140055A (en) * | 1984-08-01 | 1986-02-26 | Canon Inc | color photo sensor |
| JPS6185859A (en) * | 1984-10-04 | 1986-05-01 | Canon Inc | Photoelectric conversion element |
| JPS6189659A (en) * | 1984-10-09 | 1986-05-07 | Canon Inc | color photo sensor |
| JPS6188559A (en) * | 1984-10-08 | 1986-05-06 | Canon Inc | Image reading device |
| JPS6187365A (en) * | 1984-10-05 | 1986-05-02 | Canon Inc | Image reading device |
| JPS6190458A (en) * | 1984-10-11 | 1986-05-08 | Canon Inc | Long image sensor unit |
| JPH0734463B2 (en) * | 1986-06-07 | 1995-04-12 | キヤノン株式会社 | Photoelectric conversion device |
| JPH0732245B2 (en) * | 1986-01-24 | 1995-04-10 | キヤノン株式会社 | Photosensor manufacturing method |
| JPH0732244B2 (en) * | 1986-01-24 | 1995-04-10 | キヤノン株式会社 | Photo sensor |
| JP2501199B2 (en) * | 1986-06-23 | 1996-05-29 | キヤノン株式会社 | Photoelectric conversion device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49132923A (en) * | 1973-04-24 | 1974-12-20 | ||
| JPS5366115A (en) * | 1976-11-26 | 1978-06-13 | Hitachi Ltd | Solid image pickup equipment |
| JPS54139342A (en) * | 1978-04-20 | 1979-10-29 | Canon Inc | Information processing unit |
-
1980
- 1980-03-31 JP JP4221280A patent/JPS56138968A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49132923A (en) * | 1973-04-24 | 1974-12-20 | ||
| JPS5366115A (en) * | 1976-11-26 | 1978-06-13 | Hitachi Ltd | Solid image pickup equipment |
| JPS54139342A (en) * | 1978-04-20 | 1979-10-29 | Canon Inc | Information processing unit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56138968A (en) | 1981-10-29 |
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