JPH023626Y2 - - Google Patents

Description

[Detailed Description of the Invention] Technical Field The present invention relates to a film carrier type semiconductor device.

BACKGROUND ART An example of a semiconductor device supported by a film carrier used for manufacturing hybrid integrated circuit devices, etc.
As shown in Fig. and Fig. 2. In the figure, 1 is a long film made of polyimide or the like, in which sprocket holes 1a are drilled along both side edges, and rectangular or square first through holes 1b are drilled in a straight line at regular intervals in the center. Further, second through holes 1c are bored around each side of the first through hole 1b. 2 is a plurality of etched copper foils pasted to cover the through holes 1b and 1c of the film 1, one end of which is located within the first through hole 1b, and which is formed across the second through hole 1c. The lead is plated with a metal that easily forms a eutectic crystal, such as gold or tin, or a metal that is easy to solder. 3 is a semiconductor pellet inserted into the first through hole 1b;
A plurality of bump electrodes 4 are provided on one main surface 3a along the side peripheral surface.
is formed. This bump electrode 4 is connected to the lead 2
It is made of a metal with good bonding properties. The bump electrodes 4 are connected to the leads 2 by soldering or thermocompression bonding.

The semiconductor device in which the lead 2 is connected to the semiconductor pellet 3 is manufactured by cutting the lead 2 inside the second through hole 1c and cutting the connecting portion between each of the second through holes 1c, 1c to separate the semiconductor device into individual semiconductor devices. The leads 2 are separated and supplied to a substrate such as a hybrid integrated circuit device, and the free ends of the leads 2 are collectively connected to conductive patterns on the substrate. Since the film 1 is flexible, this supply can be carried out in a rolled state and has the advantage of being easy to automate.

By the way, even when the film 1 is rolled or stretched in a straight line, the semiconductor pellets 3
When an external force is applied to the lead 2, for example, as shown in Fig. 3, the lead 2 is deformed, the semiconductor pellet 3 is tilted, and the periphery of the semiconductor pellet 3 and the lead 2 come close to each other or come into contact with each other, resulting in a decrease in withstand voltage and a short-circuit accident. Otherwise, the lead 2 may peel off from the bump electrode 4, causing a disconnection accident. Generally, resin is coated between the main surface 3a of the lead 2 and the semiconductor pellet 3 to separate the lead 2 and the semiconductor pellet. This prevents the undesired parts of No. 3 from coming close to or coming into contact with each other.

This resin coating is done by placing a nozzle 5 above the center of the semiconductor pellet 3 as shown in FIG. I was trying to spread it out.

However, this method has a problem in that the resin layer 6a bulges at the center of the main surface 3a and becomes thinner at the peripheral edge, as shown in the illustrated example. This main surface 3a
The thickness at the center of the resin 6 changes depending on the viscosity, supply amount, curing speed, etc. of the resin 6, but it is difficult to supply a precise amount, and if the viscosity is high, curing progresses while it spreads, resulting in a thick center and a thick peripheral area. Not only did the insulation become incomplete due to the thinness of the semiconductor device, but the thickness H of the semiconductor device sometimes exceeded the standard. On the other hand, if the viscosity is low, the spreadability is good, but the resin tends to spill from the pellet 3, and the resin threads are likely to be drawn from the nozzle 5, which may stain undesired areas on the film 1. Problems such as a decrease in withstand voltage due to the thinness of the resin in adjacent parts could not be completely eliminated.

Furthermore, since the semiconductor devices are continuously formed on the film 1, even if there is a device whose thickness exceeds the standard, it cannot be replaced, so the film 1 is cut, the defective semiconductor device is removed, and the film 1 is spliced. They had no choice but to ship the products with defective external dimensions.

Purpose of disclosure of the invention This invention was proposed in view of the above problems.
To provide a semiconductor device in which the bulge of resin is eliminated and the peripheral edge of a semiconductor pellet is completely insulated.

Structure The present invention is a semiconductor pellet in which a plurality of bump electrodes are formed along the periphery of one principal surface, and one end of a ribbon-shaped lead is connected to each bump electrode of the semiconductor pellet. It is characterized by forming a layer.

Embodiment of the invention An embodiment of the invention will be applied to the semiconductor device shown in FIG. 1 and will be explained below with reference to FIGS. 5 and 6. In the drawings, the same reference numerals as in FIGS. 1 and 2 indicate the same components, and the description thereof will be omitted. The feature of the present invention lies in the resin layer 7.
That is, the resin layer 7 is formed on one main surface 3 of the semiconductor pellet 3'.
It is formed in an annular shape along the bump electrode 4 on a'. In the embodiment shown in FIG. 5, an annular resin layer 7 is formed by providing a recess 8 in the center of the semiconductor pellet 3' and supplying resin onto the main surface 3a surrounded by the recess 8 and the outer peripheral surface.

In the conventional semiconductor device, as shown in FIG. 7, the contact angle θ of the resin 6 with respect to the semiconductor pellet 3,
The thickness t of the resin 6 was determined for the contact length L of , and the thickness of the resin at the bump electrode 4 position was also thin, whereas in the device shown in FIG. 5, the same contact as before as shown in FIG. With respect to the angle θ, the contact length L' of the resin 7 is less than half of the conventional length, and the thickness t' of the resin 7 can be reduced. On the other hand, since the apex of the resin 7 is close to the bump electrode 4, the resin 7 easily enters between the lead 2 and the main surface 3a'.

Therefore, the swelling of the resin layer 7 is small, making it easy to control the thickness of the semiconductor device to below a certain value, and making it possible to form a thick resin layer in the area adjacent to the pellet side peripheral surface, which prevents a drop in withstand voltage due to deformation of the leads. Short circuit accidents can be prevented.

FIGS. 9 and 10 show other embodiments of the present invention, in which the same reference numerals as in the apparatus shown in FIG. What is different from the device shown in FIG. 5 is the semiconductor pellet 3'', in which a member 9 having poor wettability with respect to the resin 7 is adhered to the center of one main surface 3a'', and a member 9 on one main surface 3a'' is An annular resin layer 7 is formed between the resin layer 9 and the side peripheral surface.

According to this, in addition to obtaining the same effect as the semiconductor device shown in FIG. 5, the resin can be supplied to the center of the semiconductor pellet, and the member 7 can be
It is also possible to make the spread of the resin uniform by changing the area of the resin.

Incidentally, the present invention is not limited to the above-mentioned embodiment, and for example, a hole may be provided in place of the recess 8 of the device shown in FIG.

Effects of the Invention As described above, according to the present invention, it is possible to realize a semiconductor device that prevents a drop in withstand voltage and short-circuit accidents, and whose thickness is regulated to a specified value or less.

[Brief explanation of the drawing]

FIG. 1 is a plan view of a semiconductor device supported by a film carrier, FIG. 2 is a sectional view taken along line A-A in FIG. 1, FIG. 3 is a side sectional view showing problems in the semiconductor device shown in FIG. is a side sectional view showing the resin coating,
FIG. 5 is a plan view showing an embodiment of the present invention, FIG. 6 is a side sectional view of FIG. 5, FIG. 7 is a side view showing a conventional resin coating state, and FIG. 8 is a semiconductor device according to the present invention. FIG. 9 is a side view showing the state of resin coating; FIG. 9 is a plan view showing another embodiment of the present invention;
FIG. 10 shows a side sectional view of the device of FIG. 9. 2...Lead, 3', 3''...Semiconductor pellet,
3a', 3a''...one main surface, 4...bump electrode, 7...
...Resin layer.

Claims (1)

[Scope of utility model registration request] A semiconductor pellet having a plurality of bump electrodes formed along the periphery of one main surface, and one end of a ribbon-shaped lead connected to each bump electrode, wherein an annular resin layer is formed along the bump electrodes of the semiconductor pellet. A semiconductor device characterized by: