JPH02310939A - Wire bonding - Google Patents
Wire bondingInfo
- Publication number
- JPH02310939A JPH02310939A JP1132078A JP13207889A JPH02310939A JP H02310939 A JPH02310939 A JP H02310939A JP 1132078 A JP1132078 A JP 1132078A JP 13207889 A JP13207889 A JP 13207889A JP H02310939 A JPH02310939 A JP H02310939A
- Authority
- JP
- Japan
- Prior art keywords
- wire bonding
- bonding
- bonding tool
- wire
- bonded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 238000010438 heat treatment Methods 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 16
- 238000003466 welding Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 4
- 238000002788 crimping Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明はワイヤーボンディング方法に係り、特にＩＣ素
子などの半導体素子を回路基板などに搭載し、回路基板
面上などに設けられたリードパッドとワイヤーボンディ
ングする方法の改良に関する。[Detailed Description of the Invention] [Object of the Invention] (Industrial Application Field) The present invention relates to a wire bonding method, and particularly relates to a wire bonding method for mounting a semiconductor element such as an IC element on a circuit board, etc. This invention relates to an improvement in a method for wire bonding with lead pads that have been used.
（従来の技術）
たとえば回路基板面上に、ＩＣ素子などの半導体素子を
搭載、配置し、この半導体素子と前記回路基板面上に予
め設けである所要のリードパッドとをワイヤーボンディ
ングし、半導体素子をリードパッドに電気的に接続する
実装方法が知られている。ところで、上記ワイヤーボン
ディングは、たとえば超音波発生機構を有する一方、ボ
ンディング用ワイヤーを順次供給し圧着する機能を有す
るワイヤーボンディングツールを具備した装置を用いて
次のように行われている。すなわち、所定の載置台たと
えばＸ−Ｙテーブル上に回路基板を載置し１．この回路
基板面の所定領域にＩＣ素子などを搭載、配置する。次
いでワイヤーボンディングツールを所要の位置に移動、
駆動して、保持しているワイヤーをワイヤーボンディン
グツール先端面で所定領域に圧着する一方、そのワイヤ
ーボンディングツールの超音波振動により圧着したワイ
ヤーと半導体素子のリード電極や回路パターンなどのリ
ードパッドとを順次溶着させて（ボンディングして）、
所要の電気的接続をおこなっている。しかして、上記ワ
イヤーボンディングツールの超音波振動によるボンディ
ングを助けるため、たとえばワイヤーボンディングツー
ルに電熱線などの補助的加熱源を内蔵させることも試み
られている。(Prior art) For example, a semiconductor element such as an IC element is mounted and arranged on the surface of a circuit board, and this semiconductor element and a required lead pad provided in advance on the surface of the circuit board are wire-bonded, and the semiconductor element is A mounting method is known in which a lead pad is electrically connected to a lead pad. By the way, the above-mentioned wire bonding is performed in the following manner using, for example, a device that has an ultrasonic generation mechanism and a wire bonding tool that has a function of sequentially supplying and crimping bonding wires. That is, the circuit board is placed on a predetermined mounting table, such as an X-Y table, and 1. IC elements and the like are mounted and arranged in a predetermined area on the surface of this circuit board. Then move the wire bonding tool to the desired position,
While driving and crimping the held wire to a predetermined area with the tip surface of the wire bonding tool, the ultrasonic vibration of the wire bonding tool connects the crimped wire to a lead pad such as a lead electrode or circuit pattern of a semiconductor element. By sequentially welding (bonding),
The required electrical connections are made. Therefore, attempts have been made to incorporate an auxiliary heating source, such as a heating wire, into the wire bonding tool in order to assist the bonding by ultrasonic vibration of the wire bonding tool.
（発明が解決しようとする課題）
しかし、上記ワイヤーボンディング方法には実用上次の
ような不都合がある。すなわち、ワイヤーボンディング
ツールの超音波振動および補助加熱によるワイヤーのボ
ンディングは、被ボンディング部の昇温に時間を要し高
速化が難かしい。(Problems to be Solved by the Invention) However, the wire bonding method described above has the following practical disadvantages. That is, wire bonding using ultrasonic vibration and auxiliary heating of a wire bonding tool takes time to raise the temperature of the bonded portion, making it difficult to increase the speed.
この改善策としてたとえば、回路基板を載置する載置台
に加熱源を内蔵、具備させておき、補助的に回路基板を
裏面からたとえば１００〜３００℃程度に接触加熱する
ことも考えられる。しかしながら、上記補助的に回路基
板を裏面から接触加熱する方式の場合は、半導体素子な
どを両面に実装する構成には適さない。つまり、両面実
装型でワイヤーボンディングする場合は、半導体素子な
どを実装した面を載置するため載置台の面に、前記実装
された半導体素子などを十分に収納し得る領域たとえば
凹部を形設しておく必要がある。しかし、上記載置台面
に凹部を形設しておくと、載置された回路基板に加熱温
度ムラが生じるため、信頼性の高いワイヤーボンディン
グの高速化達成は難かしい。すなわち、前記回路基板の
加熱温度ムラ発生に対処しては、ワイヤーボンディング
ツールの圧力（圧着力）、印加する超音波など状況に応
じて適宜選択、設定、制御しなければならず、ボンディ
ング操作が著しく煩雑となり実際的でない。As a countermeasure for this problem, for example, it may be possible to provide a built-in heating source in the mounting table on which the circuit board is placed, and contact-heat the circuit board from the back side to, for example, about 100 to 300°C. However, the method of supplementary contact heating of the circuit board from the back side is not suitable for a configuration in which semiconductor elements and the like are mounted on both sides. In other words, in the case of wire bonding with a double-sided mounting type, in order to place the surface on which the semiconductor elements are mounted, an area such as a recess is formed on the surface of the mounting table that can sufficiently accommodate the mounted semiconductor elements. It is necessary to keep it. However, if a recess is formed in the surface of the mounting table, uneven heating temperature will occur in the mounted circuit board, making it difficult to achieve reliable wire bonding at high speed. In other words, in order to deal with the uneven heating temperature of the circuit board, it is necessary to select, set, and control the pressure (crimping force) of the wire bonding tool, the applied ultrasonic wave, etc. as appropriate depending on the situation, and the bonding operation is difficult. This becomes extremely complicated and impractical.
［発明の構成］
（課７題を解決するための手段）
本発明は上記事情に対処してなされたもので、溶着手段
を備えたワイヤーボンディングツールを稼動して、半導
体素子と所要のリードパ・ソドとをワイヤーボンディン
グする方法において、少くとも前記半導体素子とリード
パッドとを非接触的な加熱手段で補助的に加熱すること
を特徴とする。[Structure of the Invention] (Means for Solving Problem 7) The present invention has been made in response to the above-mentioned circumstances, and operates a wire bonding tool equipped with a welding means to bond a semiconductor element to a required lead pattern. The method of wire bonding the semiconductor element and the lead pad is characterized in that at least the semiconductor element and the lead pad are auxiliary heated by a non-contact heating means.
（作 用）
本発明によれば、所要のワイヤーボンディングに要する
熱源として、ワイヤーボンディングツールの超音波振動
を主にし、たとえば遠赤外線ヒータからの放射熱（非接
触熱源）を補助的に併用している。つまり、少くとも半
導体素子および回路パターンリードパッドなどは非接触
的な加熱手段で補助的に加熱されている。このため、披
ボンディング部の補助的な加熱温度ムラの発生も容品に
防止乃至軽減され、前記ワイヤーボンディングツールの
超音波振動を主とした熱との相互作用により、容品かつ
確実にしかも高速に所要のワイヤーボンディングを達成
し得る。(Function) According to the present invention, the ultrasonic vibration of the wire bonding tool is mainly used as the heat source required for the required wire bonding, and radiant heat (non-contact heat source) from, for example, a far-infrared heater is used in combination. There is. In other words, at least the semiconductor elements and circuit pattern lead pads are auxiliary heated by non-contact heating means. Therefore, the occurrence of auxiliary heating temperature unevenness at the wire bonding part is prevented or reduced, and the interaction with heat mainly due to the ultrasonic vibration of the wire bonding tool allows the wire bonding tool to be heated reliably and at high speed. can achieve the required wire bonding.
（実施例）
以下第１図を参照して本発明の詳細な説明する。第１図
は本発明の実施態様を模式的に示したもので次のように
行われる。すなわち、所定の載置台またとえばＸ−Ｙテ
ーブル上に回路基板２を載置し、この回路基板２面の所
定領域にＩＣ素子３ａなどを搭載、配置する。次いでワ
イヤーボンディングツール４を所要の位置に移動、駆動
して、保持しているワイヤー５をワイヤーボンディング
ツール４先端面で所定領域に圧着する一方、そのワイヤ
ーボンディングツール４の超音波振動により圧着したワ
イヤー５と半導体素子３ａのリード電極や回路パターン
などのリードパッド６とを順次溶着させて（ボンディン
グして）、前記ボンディングされたワイヤー５ａによっ
て所要の電気的接続をおこなっている。しかして、上記
ワイヤーボンディングツール４の稼動によるワイヤーボ
ンディングつまり、ボンディングツール４先端面で圧着
され、ボンディングツール４に印加される超音波によっ
て、所定のリードパッド６に、ボンディングワイヤー５
をボンディングする過程において、このボンディング操
作されている回路基板面２を、たとえば斜め上方向に配
設された遠赤外線ヒータ７からの放射熱によって補助的
に加熱昇温しでいる。つまり、前記ワイヤーボンディン
グはボンディングツール４に印加される超音波による発
生熱と遠赤外線ヒータ７を非接触な熱源とした放射熱と
によって所要のワイヤーボンディングが達成されている
。なお、第１図において、ｌａは回路基板２の裏面に実
装された半導体素子３ｂを収容可能に載置台１に設けら
た凹部であり、この載置台１は断熱性材料で構成しても
よいし、また熱伝導性材料で構成しかつ、補助加熱機能
をもたせてもよい。(Example) The present invention will be described in detail below with reference to FIG. FIG. 1 schematically shows an embodiment of the present invention, which is carried out as follows. That is, the circuit board 2 is placed on a predetermined mounting table, such as an X-Y table, and the IC elements 3a and the like are mounted and arranged in a predetermined area on the surface of the circuit board 2. Next, the wire bonding tool 4 is moved to a desired position and driven, and the wire 5 being held is crimped to a predetermined area with the tip surface of the wire bonding tool 4, while the crimped wire is crimped by the ultrasonic vibration of the wire bonding tool 4. 5 and a lead pad 6 such as a lead electrode or a circuit pattern of the semiconductor element 3a are sequentially welded (bonded) to each other, and a required electrical connection is made by the bonded wire 5a. Thus, wire bonding is performed by operating the wire bonding tool 4, that is, the bonding wire 5 is crimped at the tip end surface of the bonding tool 4, and is attached to a predetermined lead pad 6 by ultrasonic waves applied to the bonding tool 4.
In the process of bonding, the circuit board surface 2 undergoing the bonding operation is auxiliary heated and heated, for example, by radiant heat from a far-infrared heater 7 disposed diagonally upward. That is, the required wire bonding is achieved by the heat generated by the ultrasonic waves applied to the bonding tool 4 and the radiant heat using the far infrared heater 7 as a non-contact heat source. In FIG. 1, la is a recess provided in the mounting table 1 to accommodate the semiconductor element 3b mounted on the back surface of the circuit board 2, and the mounting table 1 may be made of a heat insulating material. However, it may also be made of a thermally conductive material and provided with an auxiliary heating function.
上記例では裁置台１としてＸ−Ｙテーブルを用いたが、
載置台１は固定型としワイヤーボンディングツール４を
ボンディング位置に合せてＺ軸方向は勿論のことＸ−Ｙ
方向に移動させる方式でもよいし、さらに被ボンディン
グ部乃至被ボンディング部を含む面を非接触的に加熱す
る熱源としては、前記遠赤外線ヒータフの代りにたとえ
ば赤外線ランプやレーザビームなどを用いてもよい。In the above example, an X-Y table was used as the processing table 1, but
The mounting table 1 is of a fixed type, and the wire bonding tool 4 is aligned with the bonding position in the Z-axis direction as well as in the X-Y direction.
Alternatively, instead of the far-infrared heater, an infrared lamp, a laser beam, or the like may be used as a heat source for non-contact heating of the bonding target part or a surface including the bonding target part. .
［発明の効果］
上記の如く本発明によれば、半導体素子および回路基板
上のリードパッドをワイヤーボンディングするに当り、
非接触的な加熱手段により少くとも被ボンディング部を
補助的に加熱昇温させている。このため、ボンディング
ツールにおける超音波およびボンディングツールにおけ
る補助的な加熱による場合に比べ、所要のボンディング
は容易にかつ、高速になし得る。しかも、本発明方法に
おける補助的な加熱は非接触な熱源からの放射熱による
ため、所要領域においては加熱ムラ（昇温ムラ）なども
容易に抑制乃至防止される。したがって、ボンディング
操作過程において、ボンディングツールの圧力（圧着力
）や印加する超音波の調整など要せずに、信頼性の高い
ボンディングを達成し得る。[Effects of the Invention] As described above, according to the present invention, when wire bonding lead pads on a semiconductor element and a circuit board,
At least the part to be bonded is auxiliarily heated and heated by non-contact heating means. Therefore, the required bonding can be achieved more easily and faster than by ultrasonic waves in the bonding tool and auxiliary heating in the bonding tool. Moreover, since the auxiliary heating in the method of the present invention is based on radiant heat from a non-contact heat source, uneven heating (uneven temperature rise) etc. can be easily suppressed or prevented in required areas. Therefore, in the bonding operation process, highly reliable bonding can be achieved without requiring adjustment of the pressure (pressing force) of the bonding tool or the applied ultrasonic waves.
第１図は本発明に係るワイヤーボンディング方法の実、
施態様を模式的に例示する断面図である。
１・・・・・・・・・回路基板載置台
２・・・・・・・・・回路基板
３ａ、３ｂ・・・半導体素子FIG. 1 shows the actual wire bonding method according to the present invention.
FIG. 2 is a cross-sectional view schematically illustrating an embodiment. 1......Circuit board mounting table 2...Circuit boards 3a, 3b...Semiconductor elements
Claims (1)
て、半導体素子と所要のリードパッドとをワイヤーボン
ディングする方法において、少くとも前記半導体素子と
リードパッドとを非接触的な加熱手段で補助的に加熱す
ることを特徴とするワイヤーボンディング方法。In a method of wire bonding a semiconductor element and a required lead pad by operating a wire bonding tool equipped with a welding means, at least the semiconductor element and the lead pad are auxiliary heated by a non-contact heating means. A wire bonding method characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1132078A JPH02310939A (en) | 1989-05-25 | 1989-05-25 | Wire bonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1132078A JPH02310939A (en) | 1989-05-25 | 1989-05-25 | Wire bonding |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02310939A true JPH02310939A (en) | 1990-12-26 |
Family
ID=15072995
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1132078A Pending JPH02310939A (en) | 1989-05-25 | 1989-05-25 | Wire bonding |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02310939A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001097278A1 (en) * | 2000-06-12 | 2001-12-20 | Advanced Micro Devices, Inc. | Solder bump and wire bonding by infrared heating |
| WO2008155013A1 (en) * | 2007-06-19 | 2008-12-24 | Ultrasonics Steckmann Gmbh | Ultrasonic welding station |
| US8444044B2 (en) | 2008-03-10 | 2013-05-21 | Micron Technology, Inc. | Apparatus and methods for forming wire bonds |
| CN110491794A (en) * | 2018-05-15 | 2019-11-22 | 英飞凌科技股份有限公司 | Method for conducting element to be bonded to bond partner |
-
1989
- 1989-05-25 JP JP1132078A patent/JPH02310939A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001097278A1 (en) * | 2000-06-12 | 2001-12-20 | Advanced Micro Devices, Inc. | Solder bump and wire bonding by infrared heating |
| US6384366B1 (en) | 2000-06-12 | 2002-05-07 | Advanced Micro Devices, Inc. | Top infrared heating for bonding operations |
| JP2004503939A (en) * | 2000-06-12 | 2004-02-05 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | Solder bump and wire bonding by infrared heating |
| WO2008155013A1 (en) * | 2007-06-19 | 2008-12-24 | Ultrasonics Steckmann Gmbh | Ultrasonic welding station |
| US8444044B2 (en) | 2008-03-10 | 2013-05-21 | Micron Technology, Inc. | Apparatus and methods for forming wire bonds |
| CN110491794A (en) * | 2018-05-15 | 2019-11-22 | 英飞凌科技股份有限公司 | Method for conducting element to be bonded to bond partner |
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