JPH02310916A - Manufacture of thin-film semiconductor and thin-film semiconductor structure device - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method and apparatus for manufacturing a thin film semiconductor device, and more particularly to a method for manufacturing a thin film semiconductor device suitable for manufacturing an active matrix type large area display. .

[Conventional technology]

In recent years, panel-type liquid crystal display devices equipped with thin-film semiconductor devices as switching elements have been widely used, and thin-film transistors (Thin F.
Amorphous silicon and polycrystalline silicon are used as semiconductor materials for the ilm transistor (TPT). Conventionally, these amorphous silicon or polycrystalline silicon (polycrystalline silicon)
Line 5ilicon, abbreviated as Po1y-S
i) Is the membrane low pressure CVD (LPCVD) or plasma? CV
It is formed by the D method (PCVD), and as shown in Figure 4, after being deposited on the entire surface of the glass substrate that will become the screen, patterning is performed using a normal photographic method except for the TPT area (50 μm x 50 μm) required for the pixel. and removed by etching method.

As related to these, Japanese Patent Application Laid-Open No. 62-84563
There is a publication.

[Problem to be solved by the invention]

In the above conventional technology, the processing temperature for forming a semiconductor thin film on a glass substrate is 500 to 600°C, and the size is 1000°C.
■When creating a large display device such as Attempts to uniformly form a crystalline silicon film or an amorphous silicon film with high electron mobility over a large area have resulted in problems such as an increase in the size of the equipment and an extremely high IK production cost.

Therefore, the size of the display created using this method is
The maximum diagonal limit was 14 inches.

Furthermore, in order to homogenize the characteristics of each element, the above-mentioned conventional technology includes a step of removing approximately 90% or more of the semiconductor thin film formed uniformly over the entire surface of the glass substrate by normal photoetching, leaving only a portion. Another disadvantage was that the process cost was high.

In order to improve the drawbacks of the conventional example, as described in Applied Physics Vol. 56, No. 9 (1987), p. 1190, the semiconductor compound gas is adsorbed by cooling the substrate, and the electron beam A method of applying beam energy such as locally and forming a semiconductor layer only in that region through a surface reaction is also being considered. However, according to this method, in order to obtain a semiconductor layer with a desired film thickness in a short reaction time, it is necessary to cool the entire large glass substrate to a very low temperature (below -100'C), making continuous production possible. There are drawbacks to reducing manufacturing costs through methods such as oxidation.

In addition, impurities are likely to be mixed into the thin film formed due to low temperature formation.

There are drawbacks such as low crystallinity and the need to add a quality improvement process.6 The purpose of the present invention is to provide a means and method for producing high-quality thin film semiconductors on large-area substrates at low cost. It's about doing.

[Means to solve IIM]

The above purpose is to solidify a liquid gas source material containing a semiconductor such as silicon at room temperature and normal pressure, and to irradiate the solidified material with a particle beam such as an ion beam or an electron beam to cause sputtering of the solidified material. At the same time as sputtering particles generated by sputtering are deposited on the glass substrate, at the desired position where you want to deposit a semiconductor film such as a silicon film.

This is achieved by locally irradiating an ion beam, electron beam, or laser beam to cause a decomposition reaction of sputtered particles and form a semiconductor thin film.

[Effect]

Semiconductor compound molecules that can be dissociated at low energy (e.g. S I H, S x H2 + S i
By transporting a large amount of Ha, ate, ) onto a substrate, a high-quality semiconductor thin film can be formed at high speed without heating a large glass substrate to high temperatures. Furthermore, it is not necessary to extremely cool the substrate itself, and a high quality semiconductor thin film can be formed without contamination with impurities or deterioration of crystallinity.

By locally irradiating the substrate with an ion beam 11, a laser beam, or the like, a semiconductor thin film can be selectively formed only in desired regions.

〔Example〕

Embodiments of the present invention will be described below with reference to FIGS. 1 and 2.

FIG. 1 schematically shows a method for selectively growing a polycrystalline silicon film 2 on a substrate 1. In FIG. Thickness is 1c
The solidified layer 3 of a+ SiH4 monosilane gas is irradiated with a hydrogen ion beam 4 with an acceleration energy of 5 keV, and sputtered particles 5 (S i H,5it(z.

S i Hs, S i H4, etc.). Next, an excitation beam (light, electron, ion, etc.) is applied locally to a part of the region 6 where the sputtered particles are deposited on the substrate 1.
Polycrystalline silicon llI2 can be selectively deposited on the surface of the substrate 1 by irradiating the substrate 1 with 7 and proceeding with the decomposition reaction of the adhering sputtered particles only in the irradiated area. The region not irradiated with the excitation beam 7 is gasified and scattered.

Next, a specific example of forming a semiconductor thin film on a large-area glass substrate for manufacturing a large-screen display will be described with reference to FIG.

A copper cooling head 11 with a diameter of 101 m and a length of 1200 In is placed in a horizontal position in the vacuum vessel 10, and the temperature of the cooling head 11 is adjusted to the melting point of monosilane (-1) using liquid nitrogen.
The temperature was maintained at 196°C below 90°C. The cooling head 1
1 at a rotational speed of 1 orpm, 10 cc of monosilane gas 12 was supplied from the line gas outlet 13.
A solidified monosilane gas 3 was created on the outer periphery of the copper cooling head 11 by supplying the monosilane gas 12 for 10 minutes at an inflow rate of ice/sin from the line gas outlet 13 for 10 minutes. At the same time, a sheet-shaped hydrogen ion beam 4 was extracted from the ion source 14 with an acceleration energy of 10 keV, and was irradiated onto the surface of the solidified layer 3 of the monosilane gas, as shown in FIG. The current density of the hydrogen ion beam 4 at that time was lOμA/d, and the size of the ion beam irradiation area was IIIIII×1100 pixels.

As a result, from the assimilation fi3 of monosilane gas, sputtered particles 5 (S i H, S i H2, S i Ha,
5il14 etc.) occurs, and 5C11 below the solidified layer 3
The size is 1000mm x 10100, placed at the position of
The sputtered particles were attached to the glass substrate 1 having a thickness of 3 mm. The area 6 has a width of 10++aX100Om
over a range of m.

At the same time, 4 wavelengths of 246n from excimer laser 15
The KrFZ ximer laser beam 16 of m was condensed and scanned by an optical system 17 to irradiate a local region 18 of the sputtered particle adhesion region 6 on the glass substrate. As a result, Kr
In the irradiation area 18 of the F excimer laser beam 16, the decomposition reaction of the attached sputtered particles 5 progressed, and polycrystalline silicon was selectively precipitated. At this time, the spot diameter of the irradiated excimer laser beam was 70 μm, and the pulse energy was 0.5 J/d.
Met. The area of the deposited polycrystalline silicon is approximately 5
The dimensions were 0 μm×50 μm, and the film thickness was 300 nm.

The film thickness was controlled by controlling the current density of the sputtering ion beam, so that the uniformity over the entire area could be kept within ±5%.

Next, the glass substrate 1 is moved in the direction of the arrow at a pitch of 1.5ffI++ by linear drive by a step motor, and then moved to the next new location by the same operation as described above.
Polycrystalline silicon 2 was formed at zero locations.

At this time, the cooling rad 11 was rotated at 11,500 revolutions so that a new monosilane solidified material layer 3 was sputtered.

Next, a TPT was formed on the semiconductor thin film formed at a position corresponding to each pixel by performing oxidation, diffusion, and photolithography steps of the conventional TPT formation process.

After forming the TPT, transparent electrodes were formed and wiring between each element was performed using AI, and a display substrate was successfully created.

By the above method, it was possible to produce a display substrate with excellent TPT characteristics due to the high yield without substrate damage, high throughput, and excellent quality of the semiconductor thin film.

FIG. 3 shows an example in which this method is applied to a continuous process. There is no need to keep the substrate at a low temperature, and the front chamber 20. By installing the rear chamber 21, continuous loading of substrates into the reaction chamber can be easily achieved. In addition, a large number of reaction chambers 101, 102
By connecting these two systems and sharing the task of forming a semiconductor film on the substrate, we were able to increase throughput and achieve significant cost reductions.

〔Effect of the invention〕

According to the present invention, a thin film semiconductor device with high carrier mobility can be easily and inexpensively obtained even on a large-area glass substrate.

[Brief explanation of drawings]

Fig. 1 is a diagram showing the principle of the present invention, Fig. 2 is an example of a thin film semiconductor manufacturing device embodying the present invention, Fig. 3 is an example of a thin film semiconductor device for instantaneous operation of liquid crystal, and Fig. 4 is an example of a thin film semiconductor manufacturing device embodying the present invention. is an example of a continuous thin film semiconductor II manufacturing apparatus using the principles of the present invention. l... Substrate, 2... Polycrystalline silicon film, 3... Solidified layer, 4... Ion beam, 5... Sputtered particles,
6... Sputtered particle attachment area, 7... Excitation beam,
10... Vacuum container, 11... Cooling head, 12...
・Monosilane gas, 13... Gas outlet, 14.
...Ion source, 15...Excimer laser, 16...
Excimer laser light, 17... Optical system, 18... Excimer laser light irradiation area, 19... Local area, 20...
・Anterior chamber, 21... Back chamber, 101 1st day locusts 2 drawings

Claims (1)

[Claims] 1. Means for maintaining a liquid or gaseous raw material containing a semiconductor element in a solidified state at room temperature and normal pressure, means for irradiating the raw material with a particle beam to generate sputtered particles, and the above sputtered particles. 1. A thin film semiconductor manufacturing apparatus comprising means for holding a substrate onto which particle beams are incident, and means for irradiating a predetermined region of the substrate with a particle beam. 2. Sputtering generated by sputtering by irradiating particle beams such as ion beams or electron beams to a solidified substance containing a semiconductor element and being a liquid or gaseous raw material at room temperature and normal pressure to cause sputtering of the solidified substance. At the same time as depositing particles on a substrate such as glass, by locally irradiating desired positions with an ion beam, electron beam, or laser beam, a decomposition reaction of sputtered particles adhering to the irradiated area is caused. 1. A method for manufacturing a thin film semiconductor device, which comprises stacking the thin film semiconductor device and depositing a semiconductor film.