JPH02307251A - Resin-sealed semiconductor device - Google Patents
Resin-sealed semiconductor deviceInfo
- Publication number
- JPH02307251A JPH02307251A JP12916189A JP12916189A JPH02307251A JP H02307251 A JPH02307251 A JP H02307251A JP 12916189 A JP12916189 A JP 12916189A JP 12916189 A JP12916189 A JP 12916189A JP H02307251 A JPH02307251 A JP H02307251A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor chip
- resin
- aperture
- inner leads
- resin unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 229920005989 resin Polymers 0.000 claims abstract description 17
- 239000011347 resin Substances 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 12
- 239000000853 adhesive Substances 0.000 claims abstract description 10
- 230000001070 adhesive effect Effects 0.000 claims abstract description 10
- 230000005855 radiation Effects 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 3
- 238000001721 transfer moulding Methods 0.000 abstract description 2
- 229910001111 Fine metal Inorganic materials 0.000 abstract 2
- 229920001296 polysiloxane Polymers 0.000 abstract 1
- 230000017525 heat dissipation Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000013464 silicone adhesive Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は樹脂封止型半導体装置に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a resin-sealed semiconductor device.
従来の樹脂封止型半導体装置は第3図に示す嘩、1は樹
脂体、2は樹脂体1の内部から外部へ導出する内i11
J−ド、3は半導体チップ、4は半導体チップ3の電極
部と内部リード2とを電気的に接続する金属細線で構成
される。A conventional resin-sealed semiconductor device is shown in FIG.
3 is a semiconductor chip, and 4 is a thin metal wire that electrically connects the electrode portion of the semiconductor chip 3 and the internal lead 2.
上述した従来の樹脂封止型半導体装置はグイパッド部を
有しおらず、特に半導体チップ3の寸法が大型化した場
合に多(用いられている。つまり、グイパッド部を設け
ると樹脂体1からグイパッド部を除いた残りの余白部分
が少なくなってしまい、内部リード2を配置できなくな
ってしまう場合の対策として多く用いられている。とこ
ろが半導体チップ3の全体が樹脂体1に包まれる構造と
なっており、半導体チップ3の動作時に樹脂体1内に熱
がこもってしまい、著しく放熱成性が悪く、従って半導
体装置としての熱抵抗が著しく高くなってしまうという
欠点がある。The above-mentioned conventional resin-sealed semiconductor device does not have a Gui pad part, and is often used especially when the size of the semiconductor chip 3 increases.In other words, if the Gui pad part is provided, the Gui pad part This is often used as a countermeasure in cases where the remaining blank area excluding the inner lead 2 becomes small and it becomes impossible to arrange the internal leads 2.However, the structure in which the entire semiconductor chip 3 is wrapped in the resin body 1 is used. Therefore, heat is trapped in the resin body 1 when the semiconductor chip 3 is operated, resulting in extremely poor heat dissipation properties, resulting in a disadvantage that the thermal resistance of the semiconductor device becomes extremely high.
本発明の樹脂封止型半導体装置は、内部リードと、前記
内部リードに金属細線で電気的に接続され且つ保持され
た半導体チップと、前記半導体チップの1面に達する開
口部を有して前記半導体チップ及び前記内部リードを封
止する(封脂体と、前記開口部に充填した高熱伝導性接
着剤を介して前記樹脂体の上面に固着した放熱フィンと
を有する。The resin-sealed semiconductor device of the present invention has an internal lead, a semiconductor chip electrically connected to and held by the internal lead by a thin metal wire, and an opening reaching one surface of the semiconductor chip. The semiconductor chip and the internal leads are sealed (a sealing body), and a radiation fin is fixed to the upper surface of the resin body via a highly thermally conductive adhesive filled in the opening.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第1図は本発明の第1の実施例の断面図である。FIG. 1 is a sectional view of a first embodiment of the invention.
第1図において2は樹脂体1の内部より外部に導出する
内部リード、4は半導体チンブ3の電極パッド部と内部
リード2とを電気的に接続する金属細線、6は金属製の
放熱フィンであり、半導体チップ3の非回路形成面上の
樹脂体1に設けた貫通孔に充填された熱伝導性が良好な
シリコーン樹脂系接着剤5により取付けられている。In FIG. 1, 2 is an internal lead led out from the inside of the resin body 1, 4 is a thin metal wire that electrically connects the electrode pad part of the semiconductor chip 3 and the internal lead 2, and 6 is a metal heat radiation fin. The semiconductor chip 3 is attached using a silicone resin adhesive 5 having good thermal conductivity, which is filled in a through hole provided in the resin body 1 on the non-circuit forming surface of the semiconductor chip 3.
この様な構造であれば、半導体チップ3が直接熱伝導性
が良好な接着剤5に接触しており且つこの接着剤5を介
して放熱フィン6が取付けられているため、半導体チッ
プ3の動作時であっても樹脂体1に熱がこもることがな
く、熱放散性が著しく侵れているという利点を有する。With this structure, the semiconductor chip 3 is in direct contact with the adhesive 5 having good thermal conductivity, and the radiation fins 6 are attached via this adhesive 5, so the operation of the semiconductor chip 3 is controlled. This has the advantage that heat does not accumulate in the resin body 1 even when the heat dissipates significantly.
実験データによれば、従来構造に比べ20〜30%の熱
抵抗の低減が実現される。According to experimental data, a reduction in thermal resistance of 20-30% compared to conventional structures is achieved.
また、一般的な製造方法としては、半導体チップ3の電
極バンド部と内部リード2とを金属細線4にて電気的に
接続した後、半導体チップ3の非回路形成面の上面に貫
通孔が設けられる様に設計された金型を用いてトランス
ファーモールドを行ない、樹脂体1を形成し、さらにそ
の後熱伝導性に優れたシリコーン系接着剤5を貫通孔に
流入し、金属性放熱フィン6を取付けるという方法が採
られる。Further, as a general manufacturing method, after the electrode band portion of the semiconductor chip 3 and the internal leads 2 are electrically connected with the thin metal wire 4, a through hole is formed on the upper surface of the non-circuit forming surface of the semiconductor chip 3. Transfer molding is performed using a mold designed to allow the resin body 1 to be formed, and then a silicone adhesive 5 with excellent thermal conductivity is flowed into the through holes to attach the metal heat dissipating fins 6. This method is adopted.
尚、本実施例は金属細線4による電気的接続を例にとっ
たが、その他フリップチップ等の金属細線以外の接続方
法も当然採ることができる。Although this embodiment takes as an example the electrical connection using the thin metal wire 4, other connection methods other than the thin metal wire, such as flip-chip, can of course be used.
第2図は本発明の第2の実施例の断面図である。FIG. 2 is a sectional view of a second embodiment of the invention.
図において、7は半導体チップ3の回路形成面上にコー
ティングして設けられた通常5〜15μm厚のポリイミ
ド系樹脂層であり、この1針脂層7の上面に設けた樹脂
体の貫通孔に充填されたシリコーン系接着剤5を介して
金属放熱フィン6が取付けられている。In the figure, 7 is a polyimide resin layer with a thickness of usually 5 to 15 μm provided by coating on the circuit forming surface of the semiconductor chip 3. Metal heat radiation fins 6 are attached via filled silicone adhesive 5.
この実施例では放熱フィン6が半導体チップ3の回路形
成面上に取付けられているため、熱放散性にはさらに侵
れるという利点がある。実験データでは実施例1に比べ
さらに10%〜15%の熱抵抗の低減が実現できた。In this embodiment, since the heat dissipation fins 6 are attached on the circuit forming surface of the semiconductor chip 3, there is an advantage that the heat dissipation performance is further improved. According to experimental data, a further reduction in thermal resistance of 10% to 15% compared to Example 1 was achieved.
以上説明したように、本発明は半導体チップの回路形成
面または非回路形成面の上面に設けた樹脂体の貫通孔に
充填された熱伝導性が良好な接着剤を介して放熱フィン
が取付けられており、熱放散性に優れた半導体装置を提
供できるという効果がある。As explained above, the present invention has a heat dissipation fin attached to the through hole of the resin body provided on the upper surface of the circuit formation surface or non-circuit formation surface of the semiconductor chip through an adhesive having good thermal conductivity. This has the effect of providing a semiconductor device with excellent heat dissipation properties.
第1図は本発明の第1の実施例の断面図、第2図は本発
明の第2の実施例の断面図、第3図は従来のi鼓脂封止
型半導体装置の断面図である。
1・・・・・・樹脂体、2・・・・・・内部リード、3
・・・・・・半導体チップ、4・・・・・・金属細線、
5・・・・・・接着剤、6・・・・・・放熱フィン、7
・・・・・・ポリイミド木系樹脂層。
代理人 弁理士 内 原 晋
箋 2 図
第 3 図FIG. 1 is a sectional view of a first embodiment of the present invention, FIG. 2 is a sectional view of a second embodiment of the present invention, and FIG. 3 is a sectional view of a conventional i-sealed semiconductor device. be. 1... Resin body, 2... Internal lead, 3
...semiconductor chip, 4... thin metal wire,
5...Adhesive, 6...Radiation fin, 7
・・・・・・Polyimide wood resin layer. Agent Patent Attorney Shinji Uchihara 2 Figure 3
Claims (1)
続され且つ保持された半導体チップと、前記半導体チッ
プの1面に達する開口部を有して前記半導体チップ及び
前記内部リードを封止する樹脂体と、前記開口部に充填
した高熱伝導性接着剤を介して前記樹脂体の上面に固着
した放熱フィンとを有することを特徴とする樹脂封止型
半導体装置。an internal lead, a semiconductor chip that is electrically connected to and held by the internal lead with a thin metal wire, and a resin that has an opening that reaches one surface of the semiconductor chip and seals the semiconductor chip and the internal lead. 1. A resin-sealed semiconductor device comprising: a body; and a heat dissipating fin fixed to the upper surface of the resin body via a highly thermally conductive adhesive filled in the opening.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12916189A JPH02307251A (en) | 1989-05-22 | 1989-05-22 | Resin-sealed semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12916189A JPH02307251A (en) | 1989-05-22 | 1989-05-22 | Resin-sealed semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02307251A true JPH02307251A (en) | 1990-12-20 |
Family
ID=15002654
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12916189A Pending JPH02307251A (en) | 1989-05-22 | 1989-05-22 | Resin-sealed semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02307251A (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0582705A1 (en) * | 1992-03-02 | 1994-02-16 | Motorola, Inc. | Molded ring integrated circuit package |
EP0712158A2 (en) | 1994-11-11 | 1996-05-15 | Seiko Epson Corporation | Resin sealing type semiconductor device with cooling member and method of making the same |
US5594282A (en) * | 1993-12-16 | 1997-01-14 | Seiko Epson Corporation | Resin sealing type semiconductor device and method of making the same |
US5633529A (en) * | 1994-07-13 | 1997-05-27 | Seiko Epson Corporation | Resin sealing type semiconductor device and method of making the same |
US5652461A (en) * | 1992-06-03 | 1997-07-29 | Seiko Epson Corporation | Semiconductor device with a convex heat sink |
US5686361A (en) * | 1992-06-03 | 1997-11-11 | Seiko Epson Corporation | Method for manufacturing a semiconductor device having a heat radiator |
US5777380A (en) * | 1995-03-17 | 1998-07-07 | Seiko Epson Corporation | Resin sealing type semiconductor device having thin portions formed on the leads |
US5801435A (en) * | 1995-02-27 | 1998-09-01 | Seiko Epson Corporation | Resin sealing type semiconductor device and method of making the same |
CN104681512A (en) * | 2014-12-30 | 2015-06-03 | 华天科技(西安)有限公司 | Flip chip-packaging heat dissipation structure and preparation method thereof |
WO2022230243A1 (en) * | 2021-04-28 | 2022-11-03 | ソニーセミコンダクタソリューションズ株式会社 | Semiconductor device |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58100447A (en) * | 1981-12-11 | 1983-06-15 | Hitachi Ltd | Resin sealing type semiconductor device and manufacture thereof |
JPS6149446A (en) * | 1984-08-17 | 1986-03-11 | Matsushita Electronics Corp | Resin seal type semiconductor device |
JPS61137349A (en) * | 1984-12-10 | 1986-06-25 | Toshiba Corp | Semiconductor device |
JPH02739B2 (en) * | 1980-09-30 | 1990-01-09 | Fujitsu Ltd | |
JPH02129951A (en) * | 1988-11-09 | 1990-05-18 | Hitachi Ltd | Semiconductor device |
-
1989
- 1989-05-22 JP JP12916189A patent/JPH02307251A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02739B2 (en) * | 1980-09-30 | 1990-01-09 | Fujitsu Ltd | |
JPS58100447A (en) * | 1981-12-11 | 1983-06-15 | Hitachi Ltd | Resin sealing type semiconductor device and manufacture thereof |
JPS6149446A (en) * | 1984-08-17 | 1986-03-11 | Matsushita Electronics Corp | Resin seal type semiconductor device |
JPS61137349A (en) * | 1984-12-10 | 1986-06-25 | Toshiba Corp | Semiconductor device |
JPH02129951A (en) * | 1988-11-09 | 1990-05-18 | Hitachi Ltd | Semiconductor device |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0582705A4 (en) * | 1992-03-02 | 1995-02-22 | Motorola Inc | RING ENVELOPED SEMICONDUCTOR PACK. |
EP0582705A1 (en) * | 1992-03-02 | 1994-02-16 | Motorola, Inc. | Molded ring integrated circuit package |
US5652461A (en) * | 1992-06-03 | 1997-07-29 | Seiko Epson Corporation | Semiconductor device with a convex heat sink |
US5686361A (en) * | 1992-06-03 | 1997-11-11 | Seiko Epson Corporation | Method for manufacturing a semiconductor device having a heat radiator |
US5653891A (en) * | 1992-06-03 | 1997-08-05 | Seiko Epson Corporation | Method of producing a semiconductor device with a heat sink |
US5594282A (en) * | 1993-12-16 | 1997-01-14 | Seiko Epson Corporation | Resin sealing type semiconductor device and method of making the same |
US5891759A (en) * | 1993-12-16 | 1999-04-06 | Seiko Epson Corporation | Method of making a multiple heat sink resin sealing type semiconductor device |
US5633529A (en) * | 1994-07-13 | 1997-05-27 | Seiko Epson Corporation | Resin sealing type semiconductor device and method of making the same |
EP0712158A2 (en) | 1994-11-11 | 1996-05-15 | Seiko Epson Corporation | Resin sealing type semiconductor device with cooling member and method of making the same |
US5719442A (en) * | 1994-11-11 | 1998-02-17 | Seiko Epson Corporation | Resin sealing type semiconductor device |
US5801435A (en) * | 1995-02-27 | 1998-09-01 | Seiko Epson Corporation | Resin sealing type semiconductor device and method of making the same |
US5777380A (en) * | 1995-03-17 | 1998-07-07 | Seiko Epson Corporation | Resin sealing type semiconductor device having thin portions formed on the leads |
CN104681512A (en) * | 2014-12-30 | 2015-06-03 | 华天科技(西安)有限公司 | Flip chip-packaging heat dissipation structure and preparation method thereof |
WO2022230243A1 (en) * | 2021-04-28 | 2022-11-03 | ソニーセミコンダクタソリューションズ株式会社 | Semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6559525B2 (en) | Semiconductor package having heat sink at the outer surface | |
US6853070B2 (en) | Die-down ball grid array package with die-attached heat spreader and method for making the same | |
US6528882B2 (en) | Thermal enhanced ball grid array package | |
US6429513B1 (en) | Active heat sink for cooling a semiconductor chip | |
JP2744685B2 (en) | Semiconductor device | |
US6614660B1 (en) | Thermally enhanced IC chip package | |
JPH02114658A (en) | Semiconductor device | |
JP2007184501A (en) | Resin-sealed semiconductor device with externally exposed radiators at its top, and method for fabrication thereof | |
JPH0777258B2 (en) | Semiconductor device | |
JPH02307251A (en) | Resin-sealed semiconductor device | |
US20010040300A1 (en) | Semiconductor package with heat dissipation opening | |
JPH03174749A (en) | Semiconductor device | |
TW201916279A (en) | Chip package | |
JPH06104355A (en) | Cooling liquid enclosing type semiconductor device | |
JPH03266456A (en) | Semiconductor chip heat dissipating member and semiconductor package | |
US7038305B1 (en) | Package for integrated circuit die | |
US20050110137A1 (en) | Plastic dual-in-line packaging (PDIP) having enhanced heat dissipation | |
JP2765242B2 (en) | Integrated circuit device | |
JPH02280364A (en) | Semiconductor device | |
KR20050051806A (en) | Semiconductor package improved in heat sink property and method for manufacturing thereof | |
JP2002064174A (en) | Semiconductor device and its manufacturing method | |
JPS61150250A (en) | Semiconductor device | |
TWI228301B (en) | Package | |
KR20050027383A (en) | Semiconductor chip package having heat slug | |
JPH0722547A (en) | Semiconductor device |