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JPH02304941A - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device

Info

Publication number
JPH02304941A
JPH02304941A JP12582489A JP12582489A JPH02304941A JP H02304941 A JPH02304941 A JP H02304941A JP 12582489 A JP12582489 A JP 12582489A JP 12582489 A JP12582489 A JP 12582489A JP H02304941 A JPH02304941 A JP H02304941A
Authority
JP
Japan
Prior art keywords
resin
semiconductor device
honing
manufacturing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12582489A
Other languages
Japanese (ja)
Inventor
Katsuo Takagi
勝雄 高木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP12582489A priority Critical patent/JPH02304941A/en
Publication of JPH02304941A publication Critical patent/JPH02304941A/en
Pending legal-status Critical Current

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  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置の製造方法に関するもので、特にト
ランスファーモールド後のレジン除去工程に関するもの
である。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method for manufacturing a semiconductor device, and particularly to a resin removal step after transfer molding.

[従来の技術] 半導体装置は周知の通り集積回路が形成された半導体チ
ップをリードフレームにダイボンディングし、素子とリ
ードフレームを金線にて配線後、射出成形機にて樹脂封
止し、各リード(タイバー)を切りはなし必要に応じて
リードを折り曲げて半導体装置を製造している。
[Prior art] As is well known, semiconductor devices are manufactured by die-bonding a semiconductor chip on which an integrated circuit is formed to a lead frame, wiring the element and lead frame with gold wire, and sealing them with resin using an injection molding machine. Semiconductor devices are manufactured by cutting off leads (tie bars) and bending the leads as necessary.

第2図において5はグイバット3の中央部に接着された
半導体チップでそのボンディングバットとこれに対応す
るリード4とはそれぞれワイヤー6によって接続されて
いる。
In FIG. 2, reference numeral 5 denotes a semiconductor chip bonded to the center of the bonding bat 3, and the bonding bat and the corresponding leads 4 are connected by wires 6, respectively.

上記の様にしてリード4が接続された半導体チップ5は
エポキシ系プラスチックにより一体的に樹脂封止され半
導体装置1が構成される。
The semiconductor chip 5 to which the leads 4 are connected as described above is integrally sealed with epoxy plastic to form the semiconductor device 1.

ところで上記の様な半導体装置lは高集積化、高機能化
に伴い半導体チップも大型化、多ビン化の流れと、微細
ピッチ化の傾向にある。この様な微細ピッチ形半導体装
置は、従来は一般にセラミックによりパッケージしてい
たが、最近では低コスト化のためエポキシ系プラスチッ
クによるパッケージ(以下樹脂パッケージという)の良
否が製品の性能、信頼性を決定する上で大きなウェイト
をしめている。
Incidentally, as semiconductor devices such as those described above become highly integrated and highly functional, semiconductor chips tend to become larger, have a larger number of bins, and have a finer pitch. In the past, such fine pitch type semiconductor devices were generally packaged with ceramic, but recently, to reduce costs, the quality of the epoxy plastic package (hereinafter referred to as resin package) determines the performance and reliability of the product. It plays a big role in the process.

〔発明が解決しようとする課題1 上記の様な半導体装置を製造するためには先ず第3図に
示すように、リードフレームに複数個直列にモールドし
て成る半導体装置をタイバー8をカットした後(この時
タイバーカット工程によりレジンがリードフレームの両
サイドに若干類る)水圧ホーニング工程を通すことによ
りこのレジンを落としていた。さらにその後、フォーミ
ング工程によりリードを切断し、必要に応じて適宜折り
曲げ単品化し、1つの半導体装置としていた。
[Problem to be Solved by the Invention 1] In order to manufacture the above-mentioned semiconductor device, first, as shown in FIG. (At this time, the tie bar cutting process caused some resin to form on both sides of the lead frame.) This resin was removed by passing through a hydraulic honing process. After that, the leads were cut by a forming process and bent as necessary to form a single product into a single semiconductor device.

この結果状の様な問題点が発生する。As a result, problems like the one described above occur.

(1)ホーニング時に水圧によりレジンを落としている
ため水圧によりリードの曲りが発生し、後工程であるフ
ォーミンク工程のロード時にリードフレームのひっかか
りが発生し、搬送不良が多発した。
(1) Since the resin was dropped by water pressure during honing, the lead was bent due to the water pressure, and the lead frame got caught during loading in the forming process, which is a subsequent process, resulting in frequent conveyance failures.

(2)水圧ホーニングのみでは完全にレジンが除去でき
ず、フォーミング時に該レジンがリード折り曲げと同時
に金型上に落下しそのレジンが半導体装置のリード部に
付着、もしくは打コンとなって付着するため半導体装時
に半田付は工程で半田付は不良が多発した。
(2) Resin cannot be completely removed by hydraulic honing alone, and during forming, the resin falls onto the mold at the same time as the lead is bent, and the resin adheres to the lead part of the semiconductor device or becomes attached as a condenser. Soldering was a process during semiconductor packaging, and many soldering defects occurred.

(3)半導体装置のリード部に残ったレジンは、最終工
程での検査工程においてテスティングに使用するソケッ
トに付着し、テスト不良(連続不良)がたびたび発生し
た。
(3) The resin remaining on the lead portion of the semiconductor device adhered to the socket used for testing in the final inspection step, resulting in frequent test failures (continuous failures).

本発明は上記の様な問題を解決すべくなされたもので、
半導体装置を安定的に供給することを目的としたもので
ある。
The present invention was made to solve the above problems.
The purpose is to stably supply semiconductor devices.

〔課題を解決するための手段1 ホーニングを実施する前にNaOH系統の薬液を用い、
超音波洗浄を行なう工程を設け、タイバーカット後の半
導体装置のレジンを落ち易くしたことを特徴とする。
[Means for solving the problem 1: Before honing, use a NaOH-based chemical solution,
A feature is that an ultrasonic cleaning step is provided to make it easier to remove the resin from the semiconductor device after the tie bar is cut.

〔作 用1 ホーニングの前段処理工程としてNaOH系統の液中で
の超音波洗浄工程をすることにより、先ずレジンをフレ
ームから膨潤、遊離させ次に水圧工程を通すことにより
レジンを完全に除去する。
[Function 1] As a pre-honing treatment step, an ultrasonic cleaning step in a NaOH-based solution is performed to first swell and release the resin from the frame, and then a hydraulic step is performed to completely remove the resin.

〔実 施 例1 半導体素子を載せたリードフレームをモールドして成る
樹脂パッケージを第3図の様に形成した。7は樹脂パッ
ケージ、8はタイバー、9はレジンである。この樹脂パ
ッケージをプレス工程においてタイバーカットするが、
レジン9を付着したままホーニング工程に流動した。尚
このホーニング工程に於いては本発明による2段階の工
程により流動させる。
[Example 1] A resin package was formed by molding a lead frame on which a semiconductor element was mounted, as shown in FIG. 3. 7 is a resin package, 8 is a tie bar, and 9 is a resin. This resin package is cut with tie bars in the pressing process,
The resin 9 was flowed into the honing process with it still attached. In this honing step, fluidization is performed by a two-step process according to the present invention.

先ずホーニング装置であるが、第1図の様に前段のNa
OH系の薬液を成分とする超音波洗浄と、後段の膨潤し
たレジンを落下させる水圧のみを主体とする後段工程を
持った所の2段構造で搬送できる装置を考案した。この
装置を詳細に説明するとローダ−15より半導体装置を
3秒に1枚のベースで搬送した。先ず前段工程において
NaOH系薬液層10を約60℃まで加温し、超音波発
生装置により振動を与^、約1分間かけて前段工程を通
過させる0次に後段工程に於いて上部水圧ノズル11と
下部水圧ノズルI2より圧力150kg/cm”で水圧
をかけ半導体装置の表裏にまんべんなく噴射させた0面
この段階でレジンを完全に除去した。この後乾燥室14
に於いて約10分間エアーブローを行ない16のアンロ
ーダ−に半導体装置を収納させホーニング工程を終了し
た。ここでホーニング工程で流動させた半導体装置はリ
ードピッチ0.5mm、ビン数208pinの品物を流
動させ、レジンの落下状況を調査した。落下状況の判定
にはレジンがリードにわずかでも付着しているものを1
.除去されているものをOとしてカウントした。この結
果、従来リードフレームに複数個形成した内の1つの半
導体装置でカウントした場合、測定ポイント416ケ所
に対し前記の「l」と判定したものが168箇所であっ
た。しかし今回は16ケ所と大巾に減少した。また更に
量産前のパイロットランを試行して1000(F)流動
した。この時抜き取りで100(F)中10(F)の割
合いで抜き取り検査をしたが、レジンの残りは一切検出
されなかった。
First is the honing device, as shown in Figure 1, the Na
We devised a two-stage conveyance device that has an ultrasonic cleaning process that uses an OH-based chemical as a component, and a second stage process that uses only water pressure to drop the swollen resin. To explain this device in detail, the loader 15 transported one semiconductor device every three seconds. First, in the former step, the NaOH-based chemical liquid layer 10 is heated to about 60° C., vibrated by an ultrasonic generator, and passed through the former step for about 1 minute.Next, in the latter step, the upper water pressure nozzle 11 is heated. Water pressure of 150 kg/cm" was applied from the lower water pressure nozzle I2 and sprayed evenly onto the front and back surfaces of the semiconductor device. At this stage, the resin was completely removed. After this, the drying chamber 14
After blowing air for about 10 minutes, the semiconductor device was placed in the 16 unloader, and the honing process was completed. Here, the semiconductor device fluidized in the honing process had a lead pitch of 0.5 mm and a bottle number of 208 pins, and the falling state of the resin was investigated. To judge the falling situation, if there is even a slight amount of resin attached to the lead,
.. Those that were removed were counted as O. As a result, when counting one semiconductor device out of a plurality of semiconductor devices formed on a conventional lead frame, 168 of the 416 measurement points were determined to be "l". However, this time, the number of locations was significantly reduced to 16. Furthermore, a pilot run before mass production was conducted and the flow rate was 1000 (F). At this time, a sampling inspection was carried out at a rate of 10 (F) out of 100 (F), but no resin residue was detected.

また、水圧ホーニングに於けるリード部の曲りを検査し
た。従来品に於いては水圧750kg/cm”で完全に
ホーニングできたが、曲りが発生するため、水圧とリー
ドの曲りとの相関関係を見つけ出し作業をしていたがそ
れでも平均的8mm程度の曲りは必至であった。
We also inspected the bending of the lead part during hydraulic honing. With the conventional product, complete honing was possible at a water pressure of 750 kg/cm'', but bending occurred, so we worked to find a correlation between water pressure and lead bending, but still, the average bend was around 8 mm. It was inevitable.

しかし、今回この方法で試験した結果は平均で約1mm
前後となり大幅な改善ができる様になった。
However, the results of this test using this method were approximately 1 mm on average.
It has become possible to make a significant improvement.

また、この半導体装置を後工程であるフォーミング工程
に入れたが、ロード部でのリードフレームのひっかかり
が殆んどなくなり、搬送不良で機械が停止するという様
なトラブルは解消された。
Furthermore, when this semiconductor device was put into the forming process, which is a post-process, the lead frame was almost no longer caught in the loading section, and problems such as the machine stopping due to poor transportation were eliminated.

尚、本発明では前段にNaOH系統の薬液を用いレジン
を先ず膨潤させ更に超音波により半導体装置の全面を叩
き、ある程度レジンを除去した後、後段工程で水圧によ
り完全にレジンを除去できるようになった。
In addition, in the present invention, the resin is first swollen using a NaOH-based chemical solution in the first stage, and then the entire surface of the semiconductor device is hit with ultrasonic waves to remove a certain amount of resin, and then the resin can be completely removed by water pressure in the latter stage. Ta.

〔発明の効果1 以上述べた様に、ホーニング装置を2段構造、つまり、
前段工程にはレジンを膨潤させるNaOH系を成分とす
る超音波洗浄と、後段工程には水圧をかける工程との2
工程を通すことによりレジンを完全に除去できる。後工
程における装置のトラブル、更には半導体装置の歩留り
を向上させる効果がある。
[Effect of the invention 1 As mentioned above, the honing device has a two-stage structure, that is,
The first step involves ultrasonic cleaning using a NaOH-based component that swells the resin, and the second step involves applying water pressure.
The resin can be completely removed through this process. This has the effect of reducing equipment troubles in post-processes and further improving the yield of semiconductor devices.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の主要断面図。 第2図は従来の半導体装置を示す図。 第3図は本発明の実施例を示す図。 1・・・半導体装置 2・ ・ ・リードフレーム 3・・・ダイパッド 4・ ・ ・リード 5・・・半導体チップ 6・・・ワイヤ 7・・・樹脂パッケージ 8・・・タイバー 9・・・レジン 10・・・超音波洗浄室 11・・・上部水圧ノズル 12・・・下部水圧ノズル 14・・・乾燥室 15・・・ローダー 16・・・アンローダ− 以上 出願人 セイコーエプソン株式会社 代理人 弁理士 鈴 木 喜三部(他1名)第1図 FIG. 1 is a main sectional view of the present invention. FIG. 2 is a diagram showing a conventional semiconductor device. FIG. 3 is a diagram showing an embodiment of the present invention. 1...Semiconductor device 2. Lead frame 3...Die pad 4.・・・Lead 5...Semiconductor chip 6...Wire 7...Resin package 8...Tie bar 9...Resin 10... Ultrasonic cleaning room 11... Upper water pressure nozzle 12...Lower water pressure nozzle 14...Drying room 15...Loader 16...Unloader that's all Applicant: Seiko Epson Corporation Agent: Patent attorney Kisanbe Suzuki (and 1 other person) Figure 1

Claims (2)

【特許請求の範囲】[Claims] (1)半導体素子をリードフレームにダイボンディング
し、素子とリードフレームを金線にて配線した後、トラ
ンスファーモールド工程にて樹脂封止後、レジンの残り
汚れを除去するホーニング工程に於いて、該半導体装置
のホーニング時に、NaOH系統又はそれに準ずる薬液
で超音波洗浄を行なう洗浄工程と水圧ホーニング工程の
2通りの工程を流動させることにより、レジンのバリを
完全に除去する事を特徴とする半導体装置の製造方法。
(1) After die bonding the semiconductor element to the lead frame, wiring the element and lead frame with gold wire, and sealing with resin in the transfer molding process, the honing process removes residual dirt from the resin. A semiconductor device characterized in that when honing the semiconductor device, burrs on the resin are completely removed by flowing through two processes: a cleaning process in which ultrasonic cleaning is performed using NaOH-based or similar chemical solution, and a hydraulic honing process. manufacturing method.
(2)前記半導体装置のバリを除去するための超音波洗
浄に用いる薬液は、レジンが膨潤遊離するような薬液を
用いることを特徴とする請求項1記載の半導体装置の製
造方法。
(2) The method of manufacturing a semiconductor device according to claim 1, wherein the chemical solution used in the ultrasonic cleaning for removing burrs on the semiconductor device is a chemical solution that causes the resin to swell and release.
JP12582489A 1989-05-19 1989-05-19 Manufacturing method of semiconductor device Pending JPH02304941A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12582489A JPH02304941A (en) 1989-05-19 1989-05-19 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12582489A JPH02304941A (en) 1989-05-19 1989-05-19 Manufacturing method of semiconductor device

Publications (1)

Publication Number Publication Date
JPH02304941A true JPH02304941A (en) 1990-12-18

Family

ID=14919849

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12582489A Pending JPH02304941A (en) 1989-05-19 1989-05-19 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPH02304941A (en)

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5313965A (en) * 1992-06-01 1994-05-24 Hughes Aircraft Company Continuous operation supercritical fluid treatment process and system
US6871656B2 (en) 1997-05-27 2005-03-29 Tokyo Electron Limited Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process
US6924086B1 (en) 2002-02-15 2005-08-02 Tokyo Electron Limited Developing photoresist with supercritical fluid and developer
US6926012B2 (en) 1999-11-02 2005-08-09 Tokyo Electron Limited Method for supercritical processing of multiple workpieces
US6928746B2 (en) 2002-02-15 2005-08-16 Tokyo Electron Limited Drying resist with a solvent bath and supercritical CO2
US7060422B2 (en) 1999-11-02 2006-06-13 Tokyo Electron Limited Method of supercritical processing of a workpiece
US7140393B2 (en) 2004-12-22 2006-11-28 Tokyo Electron Limited Non-contact shuttle valve for flow diversion in high pressure systems
US7163380B2 (en) 2003-07-29 2007-01-16 Tokyo Electron Limited Control of fluid flow in the processing of an object with a fluid
US7169540B2 (en) 2002-04-12 2007-01-30 Tokyo Electron Limited Method of treatment of porous dielectric films to reduce damage during cleaning
US7208411B2 (en) 2000-04-25 2007-04-24 Tokyo Electron Limited Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
US7250374B2 (en) 2004-06-30 2007-07-31 Tokyo Electron Limited System and method for processing a substrate using supercritical carbon dioxide processing
US7255772B2 (en) 2000-07-26 2007-08-14 Tokyo Electron Limited High pressure processing chamber for semiconductor substrate
US7291565B2 (en) 2005-02-15 2007-11-06 Tokyo Electron Limited Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid
US7307019B2 (en) 2004-09-29 2007-12-11 Tokyo Electron Limited Method for supercritical carbon dioxide processing of fluoro-carbon films
US7387868B2 (en) 2002-03-04 2008-06-17 Tokyo Electron Limited Treatment of a dielectric layer using supercritical CO2
US7399708B2 (en) 2005-03-30 2008-07-15 Tokyo Electron Limited Method of treating a composite spin-on glass/anti-reflective material prior to cleaning
US7435447B2 (en) 2005-02-15 2008-10-14 Tokyo Electron Limited Method and system for determining flow conditions in a high pressure processing system
US7434590B2 (en) 2004-12-22 2008-10-14 Tokyo Electron Limited Method and apparatus for clamping a substrate in a high pressure processing system
US7442636B2 (en) 2005-03-30 2008-10-28 Tokyo Electron Limited Method of inhibiting copper corrosion during supercritical CO2 cleaning
US7491036B2 (en) 2004-11-12 2009-02-17 Tokyo Electron Limited Method and system for cooling a pump
US7524383B2 (en) 2005-05-25 2009-04-28 Tokyo Electron Limited Method and system for passivating a processing chamber
US7550075B2 (en) 2005-03-23 2009-06-23 Tokyo Electron Ltd. Removal of contaminants from a fluid

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5313965A (en) * 1992-06-01 1994-05-24 Hughes Aircraft Company Continuous operation supercritical fluid treatment process and system
US6871656B2 (en) 1997-05-27 2005-03-29 Tokyo Electron Limited Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process
US7060422B2 (en) 1999-11-02 2006-06-13 Tokyo Electron Limited Method of supercritical processing of a workpiece
US6926012B2 (en) 1999-11-02 2005-08-09 Tokyo Electron Limited Method for supercritical processing of multiple workpieces
US7208411B2 (en) 2000-04-25 2007-04-24 Tokyo Electron Limited Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
US7255772B2 (en) 2000-07-26 2007-08-14 Tokyo Electron Limited High pressure processing chamber for semiconductor substrate
US7044662B2 (en) 2002-02-15 2006-05-16 Tokyo Electron Limited Developing photoresist with supercritical fluid and developer
US6924086B1 (en) 2002-02-15 2005-08-02 Tokyo Electron Limited Developing photoresist with supercritical fluid and developer
US6928746B2 (en) 2002-02-15 2005-08-16 Tokyo Electron Limited Drying resist with a solvent bath and supercritical CO2
US7387868B2 (en) 2002-03-04 2008-06-17 Tokyo Electron Limited Treatment of a dielectric layer using supercritical CO2
US7169540B2 (en) 2002-04-12 2007-01-30 Tokyo Electron Limited Method of treatment of porous dielectric films to reduce damage during cleaning
US7163380B2 (en) 2003-07-29 2007-01-16 Tokyo Electron Limited Control of fluid flow in the processing of an object with a fluid
US7250374B2 (en) 2004-06-30 2007-07-31 Tokyo Electron Limited System and method for processing a substrate using supercritical carbon dioxide processing
US7307019B2 (en) 2004-09-29 2007-12-11 Tokyo Electron Limited Method for supercritical carbon dioxide processing of fluoro-carbon films
US7491036B2 (en) 2004-11-12 2009-02-17 Tokyo Electron Limited Method and system for cooling a pump
US7140393B2 (en) 2004-12-22 2006-11-28 Tokyo Electron Limited Non-contact shuttle valve for flow diversion in high pressure systems
US7434590B2 (en) 2004-12-22 2008-10-14 Tokyo Electron Limited Method and apparatus for clamping a substrate in a high pressure processing system
US7291565B2 (en) 2005-02-15 2007-11-06 Tokyo Electron Limited Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid
US7435447B2 (en) 2005-02-15 2008-10-14 Tokyo Electron Limited Method and system for determining flow conditions in a high pressure processing system
US7550075B2 (en) 2005-03-23 2009-06-23 Tokyo Electron Ltd. Removal of contaminants from a fluid
US7399708B2 (en) 2005-03-30 2008-07-15 Tokyo Electron Limited Method of treating a composite spin-on glass/anti-reflective material prior to cleaning
US7442636B2 (en) 2005-03-30 2008-10-28 Tokyo Electron Limited Method of inhibiting copper corrosion during supercritical CO2 cleaning
US7524383B2 (en) 2005-05-25 2009-04-28 Tokyo Electron Limited Method and system for passivating a processing chamber

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