JPH02267650A - Semiconductor storage device - Google Patents

Abstract

PURPOSE:To record the check sum value and to decide the check sum value with no intervention of a worker by using a check sum recording memory to write and read the check sum value. CONSTITUTION:In a data write state, the data stored in a memory 2a of a semiconductor test device 2 are written into a memory cell 1a of a semiconductor storage device 1. When this writing job is through, the check sum value calculated by a computing element 2b is written into a check sum value recording memory 1b. In a data read state, the data are read out of the storage device 1 and at the same time the data are sent to the element 2b for calculation of the check sum value. When this reading job is through, a comparator 2c compares the calculated check sum value with that written previously into the memory 1b. Then GO and NG are decided with coincidence and discordance secured between both check sum values. As a result, the check sum value can be decided with no intervention of a worker and the external recording is not required for the check sum value.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the structure of a semiconductor memory device.

[Conventional (l! technique)]

Wing 51 threshold, Figure 6 shows the conventional semiconductor memory device,
FIG. 3 is a block diagram showing the flow of data when the data is read and read.

Next, the operation will be explained. At the time of planting.

As shown in Figure 5, the memo 17 (
2a) The data in the semi-synthetic storage device) 11 memory cell C1a) icil is written, but when the writing is completed, the semiconductor test g @! The checksum value calculated by the arithmetic unit 21 (jl!b) is displayed on a CRT (2&) or the like, and the worker 3 reads it and records it on the recording medium 141. Semiconductor memory when reading! ! At the same time as reading data from the 1111+, the arithmetic unit (g'
Send the data to b) and calculate the checksum value. Calculate C at the end of reading! The operator 131 compares the checksum value displayed on the RTli) with the checksum value previously recorded on the storage medium 141, and if they match, the rO
It was set as KJ, and if there was a discrepancy, it was set as rNGJ.

[Problem to be solved by the invention]

In conventional semiconductor storage devices, an operator must check the checksum value &
I record, comparison 9 judgments have to be made, operator intervention is required, and checksum 1st shift record? This invention was made to solve the above-mentioned problems, and it is possible to determine the checksum value without operator intervention. The object of the present invention is to obtain a semiconductor memory device that does not require external recording.

[Meager means to solve problems]

The semiconductor memory device #L according to the present invention has a memory cell for recording a checksum value in addition to the normal memory cells, and is capable of writing and reading from and to the memory cell.

[Effect]

The semiconductor memory device according to the present invention can record checksum values and perform judgment based on checksum values without operator intervention.

[Embodiment-1] Hereinafter, one embodiment of the present invention will be explained with reference to the drawings. 1st
4 through 4 are block diagrams showing the configuration of a semiconductor memory device and a semiconductor testing device, which are suitable for writing or reading data into a semiconductor memory device. FIG. 8 shows a method for writing a checksum value when writing data, FIG. 3 shows a data flow when starting data, and FIG. 4 shows a method for reading a checksum value when starting data. In the figure +Il, rla), 121.

' 2 a ) T ' 2 b ) are the same as those shown in the conventional example of FIG. 5, so their explanation will be omitted. (1)
fl checksum recording memory; (20) is a comparator;

Next, the operation will be explained. When storing data, use the semiconductor test equipment [2!] as shown in Figure 1. Memo +7 (fa)
The data in the memory cell of the semiconductor storage device Il+ (
Write in 1a). At the end of the pledge, semiconductor testing equipment (
The arithmetic unit (2b) of step 2) puts the calculated checksum value into the checksum value recording memo I) (xb) of the semiconductor storage device ll:Il. At the time of reading, data is read from the semiconductor memory device (11) and at the same time, the data is sent to the arithmetic unit (2b) of the semiconductor testing device (2b) to calculate a checksum value.

When the start-up is completed, the calculated checksum value and the checksum value recording memory rib stored in the semiconductor storage device are stored.
) The checksum values set in i are compared by comparators r2c)t, and if they match, it is set as rGOJ, and if they do not match, it is set as rNGJ.

〔Effect of the invention〕

As described above, according to the present invention, a semiconductor memory device is provided with a memory for recording checksum values, and is configured to be able to write and read checksum values, so that recording of checksum values and judgments based on checksum values can be performed without the operator's intervention. This has the effect of providing a semiconductor memory device with high k o'J performance.

[Brief explanation of drawings]

Figures 1 to 4 show a semiconductor test device used when writing or reading data to a semiconductor memory device according to an embodiment of the present invention, and Figure 5 shows the flow of data when writing data. FIG. 6 is a diagram showing the flow of data when reading data. In the figure, +11 V'1 semiconductor memory fe (1M,
(la) i memory cell, (1b) memory for checksum recording, 21 semiconductor test equipment, r2a) memory, rgb) arithmetic unit, (2C company comparator). Note that the same reference numerals in the figure are the same. Or a considerable portion? Not 〇

Claims (1)

[Claims] A semiconductor memory device comprising a memory cell for recording a total value of data for each address of the semiconductor memory device.