JPH02242515A - Dielectric porcelain composition - Google Patents
Dielectric porcelain compositionInfo
- Publication number
- JPH02242515A JPH02242515A JP1062519A JP6251989A JPH02242515A JP H02242515 A JPH02242515 A JP H02242515A JP 1062519 A JP1062519 A JP 1062519A JP 6251989 A JP6251989 A JP 6251989A JP H02242515 A JPH02242515 A JP H02242515A
- Authority
- JP
- Japan
- Prior art keywords
- composition
- ta2o5
- weight
- temperature coefficient
- quality
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 27
- 229910052573 porcelain Inorganic materials 0.000 title abstract description 6
- 239000000919 ceramic Substances 0.000 claims description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 10
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 7
- 238000009413 insulation Methods 0.000 abstract description 7
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 6
- 239000000843 powder Substances 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003985 ceramic capacitor Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000002023 wood Substances 0.000 description 2
- 229910002971 CaTiO3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910000417 bismuth pentoxide Inorganic materials 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- LEDMRZGFZIAGGB-UHFFFAOYSA-L strontium carbonate Chemical compound [Sr+2].[O-]C([O-])=O LEDMRZGFZIAGGB-UHFFFAOYSA-L 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は誘電率、絶縁抵抗及び絶縁破壊電圧が高く、良
好度Qにすぐれ、かつ温度係数の小さい誘電体磁器組成
物に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a dielectric ceramic composition that has high dielectric constant, high insulation resistance, high dielectric breakdown voltage, excellent quality Q, and small temperature coefficient.
従来の技術
従来から誘電体磁器組成物として下記のような系が知ら
れている。BACKGROUND OF THE INVENTION The following systems have been known as dielectric ceramic compositions.
−La2O3−2Ti02− GaTiO3−2Mg0
− TiO2系−TiO2−BaTi05− Bi20
s−La2o3系・BaTiOs系
・5rTi○3系
GaTiOx系
・MgTi05系
−5rTi05−CaTi○3系
発明が解決しようとする課題
しかし、これらの一つの組成物が高い誘電率、小さい温
度係数、及びすぐれた良好度Qの全てを満足することは
不可能である。-La2O3-2Ti02- GaTiO3-2Mg0
- TiO2-based -TiO2-BaTi05- Bi20
s-La2o3 system, BaTiOs system, 5rTi○3 system, GaTiOx system, MgTi05 system - 5rTi05-CaTi○3 system Problems to be solved by the invention However, one of these compositions has a high dielectric constant, a small temperature coefficient, and an excellent It is impossible to satisfy all of the quality levels Q.
さらに、Bi2O5を含んでいるものは、積層セラミッ
クコンデンサの内部′成極として、Pdを用いることが
できないといつ課題があった。Furthermore, there is a problem that Pd cannot be used as the internal polarization of a multilayer ceramic capacitor containing Bi2O5.
本発明は誘電率、絶縁抵抗及び絶縁破壊電圧が高く、良
好度Qにすぐれ、かつ温度係数の小さい誘電体磁器を得
ることを目的とするものである。The object of the present invention is to obtain a dielectric ceramic having a high dielectric constant, high insulation resistance, high dielectric breakdown voltage, excellent quality Q, and low temperature coefficient.
課題を解決するための手段
この課題を解決するために本発明の誘電体磁器組成物1
は、一般式xSrO −yGa○−zTio 2と表わ
した時(ただし、x+yl−z=1.oo)、x+ V
+2が以下に表わす各点a、b、c、dで囲まれるモ
ル比の範囲を主成分とする組成物に対し、副成分として
T?L2050.1〜10.0重量%を含有することを
特徴とするものである。Means for solving the problem In order to solve the problem, dielectric ceramic composition 1 of the present invention
is expressed as the general formula xSrO -yGa○-zTio 2 (however, x+yl-z=1.oo), x+ V
For a composition whose main component is a range of molar ratios surrounded by points a, b, c, and d where +2 is expressed below, T? It is characterized by containing 0.1 to 10.0% by weight of L205.
第1図は本発明にかかる組成物の主成分の組成範囲を示
す三角図であり、主成分の組成範囲を限定した理由を図
を参照しながら説明する。すなわち、A領域とC領域で
は温度係数が一側に大きくなり過ぎて、実用的でなくな
る。また、B領域とD領域では焼結困難となり、誘電率
、良好度Q。FIG. 1 is a triangular diagram showing the composition range of the main components of the composition according to the present invention, and the reason for limiting the composition range of the main components will be explained with reference to the diagram. That is, in the A region and the C region, the temperature coefficient becomes too large on one side, making it impractical. In addition, sintering becomes difficult in the B region and D region, and the dielectric constant and good quality Q.
絶縁抵抗が低下する。Insulation resistance decreases.
また、第2図は第1図に示す主成分に対し、副成分とし
てのTa205含有の効果を示すグラフであり、Ta2
Q5の含有範囲を限定した理由をグラフを参照しながら
説明する。第2図に示すように’ra、、osを含有す
ることにより、破壊電圧を増大する効果57、
を有し、その含有量が主成分に対し04重量%未満では
含有効果・けなく、一方10.○重量Φを超えると良好
度Qが低下し、温度係数が一側に大きくなり実用的でな
くなる。Moreover, FIG. 2 is a graph showing the effect of containing Ta205 as a subcomponent on the main component shown in FIG.
The reason for limiting the content range of Q5 will be explained with reference to the graph. As shown in Figure 2, the inclusion of 'ra,,os has the effect of increasing the breakdown voltage57, and if its content is less than 04% by weight based on the main component, the effect of its inclusion is lost. 10. ○If the weight exceeds Φ, the quality Q decreases and the temperature coefficient becomes large on one side, making it impractical.
本発明はさらに、上記主成分と副成分に対し、マンガン
、クロム、鉄、ニッケル、コバ/l’)及i1.l’ケ
イ素の酸化物からなる群の中から選ばれた少なくとも1
種類を、それぞれMnO2、Gr205 、 Fed。The present invention further provides manganese, chromium, iron, nickel, copper/l') and i1. At least one selected from the group consisting of l' silicon oxides
The types were MnO2, Gr205, and Fed, respectively.
NiO、Coo 、 5i02に換算して上記主成分の
0.05〜1.00重量%1添加亡しめた構成とするこ
とができる。これらの添加物は、磁器の焼結性を向上さ
せる効果を有し、その添加量が0.05重量%未満では
添加効果・1−i、なく、一方1.00重量%を超える
と誘電率が低下する。It is possible to have a structure in which 0.05 to 1.00% by weight of the above main components is added in terms of NiO, Coo, and 5i02. These additives have the effect of improving the sinterability of porcelain, and when the amount added is less than 0.05% by weight, there is no additive effect (1-i), whereas when it exceeds 1.00% by weight, the dielectric constant decreases.
作用
本発明の誘電体磁器組成物により、誘電率、絶縁抵抗及
び絶縁破壊電圧が高く、良好度Qにすぐれ、かつ温度係
数の小さい誘電体磁器組成物を得ることができる。Function: By using the dielectric ceramic composition of the present invention, it is possible to obtain a dielectric ceramic composition that has high dielectric constant, insulation resistance, and dielectric breakdown voltage, excellent quality Q, and small temperature coefficient.
実施例 以下、本発明を具体的実施例により説明する。Example The present invention will be explained below using specific examples.
(実施例1)
出発原料には化学的に高純度の5rGO3、(acO5
。(Example 1) Starting materials include chemically highly purified 5rGO3, (acO5
.
TiO2、ZrO2及びTa705粉木を下記の第1表
に示す組成になるように秤量し、めのうボールを備えた
ゴム内張り1〜たボールミルに純水とともに入れ、20
時間、湿式混合した。次いで、この混合物を脱水乾燥後
、1000℃で2時間仮焼成した。粗粉砕後、再度、め
のうボールを備えたゴム内張りしたボールミル
湿式粉砕を行った。この粉砕物を脱水乾燥した後、粉本
にバインダーとして濃度5%のポリビニールアルコール
水溶液を9重量%添7+oして均質とした後、32メツ
シユのふるいを通して整粒した。次に、整粒粉体を金型
と油圧プレスを用いて成形圧力1ton/,4で直径1
6mm,厚みO − 4 [ITmに成形し、成形物を
Zr02粉を敷いた高純度のアルミナ匣鉢中に入れ、空
気中において下記の第1表に示す温度で2時間焼成し、
第1表に示す配合組成の誘電体磁器を得た。TiO2, ZrO2, and Ta705 powder wood were weighed to have the composition shown in Table 1 below, and placed in a rubber-lined ball mill equipped with agate balls with pure water for 20 minutes.
wet mixed for an hour. Next, this mixture was dehydrated and dried, and then pre-calcined at 1000° C. for 2 hours. After coarse pulverization, wet pulverization was performed again in a rubber-lined ball mill equipped with agate balls. After dehydrating and drying the pulverized product, 9% by weight of an aqueous polyvinyl alcohol solution with a concentration of 5% was added to the powder as a binder to make it homogeneous, and the product was sized through a 32-mesh sieve. Next, the sized powder was molded using a mold and a hydraulic press at a molding pressure of 1 ton/4 and a diameter of 1
6 mm, thickness O - 4 [ITm], the molded product was placed in a high purity alumina sagger covered with Zr02 powder, and fired in air at the temperature shown in Table 1 below for 2 hours,
Dielectric porcelain having the composition shown in Table 1 was obtained.
これらの試料の電気特性は、試料の両面に銀電極を焼き
付け、誘電率、良好層Q、温度係数・はYHP社製デジ
タwLGRメータモアy’ /lz 4275 Aを使
用し、測定温度20IC、測定電圧1.o Vrms測
定周波数1M fizによる測定で求めた。なお、温度
係数は20℃における容量値を基準とし、次式より求め
た。The electrical properties of these samples were determined by baking silver electrodes on both sides of the sample, dielectric constant, good layer Q, and temperature coefficient using a YHP digital wLGR meter more y'/lz 4275 A, measuring temperature 20 IC, and measuring voltage. 1. o Determined by measurement using Vrms measurement frequency 1M fiz. Note that the temperature coefficient was determined from the following formula using the capacitance value at 20° C. as a reference.
温度係数−(C85・。−c2o’。)/(C2o−c
X66)X106(+)1)mz’c)また、絶縁抵抗
はYHP社製HRメータモデル4329Aを使用し、測
定電圧り、C150V 、測定時間1分間による測定で
求めた。さらに、絶縁破壊電圧は菊水電子工業(株)高
電圧電源PH335に一3形を使用し、昇圧速r15o
V / secにより求めた絶縁破壊電圧を素子厚み
で除算し、単位長さ当たりの絶縁破壊重圧値とした。試
験条件及び結果を第1表に併せて示す。Temperature coefficient - (C85.-c2o'.)/(C2o-c
X66) Furthermore, the dielectric breakdown voltage was determined by using a type 13 type high voltage power supply PH335 manufactured by Kikusui Electronics Co., Ltd., and with a step-up speed of r15o.
The dielectric breakdown voltage determined by V/sec was divided by the element thickness to obtain a dielectric breakdown stress value per unit length. Test conditions and results are also shown in Table 1.
(以 下 余 白)
(実施例2)
出発原料には化学的に高純度のSrCO3、GaC0=
Ti02 、 Ta205 、 MnO2、Gr203
. FeO、NiO、Co。(Left below) (Example 2) The starting materials were chemically highly purified SrCO3, GaC0=
Ti02, Ta205, MnO2, Gr203
.. FeO, NiO, Co.
及び5102粉木を下記の第2表に示す組成になるよう
に秤量し、それ以後は実施例1の場合と同様に処理して
第2表に示す配合組成の誘電体磁器を得た。and 5102 powder wood were weighed so as to have the composition shown in Table 2 below, and thereafter treated in the same manner as in Example 1 to obtain dielectric porcelain having the composition shown in Table 2.
これらの試料の試験方法′#i実施例1と同一であり、
試験条件及び結果を第2表に併せて示す。The test method for these samples is the same as in Example 1,
Test conditions and results are also shown in Table 2.
(以 下 余 白)
なお、これらの実施例における誘電体1器組成物の製造
方法で(は、5rGO5、CaCO2、TiO2。(Margin below) In addition, in the manufacturing method of the dielectric single-pot composition in these Examples (5rGO5, CaCO2, TiO2.
Ta205を使用し製造したが、この方法に限定される
ものではなく、所望の、組成化になるように、5rTi
03 、 CaTiO3などの化合′吻を使用し製造し
ても実施例と同程度の特性を得ることができる。Although it was manufactured using Ta205, it is not limited to this method, and 5rTi can be used to obtain the desired composition.
03, CaTiO3 or the like can be used to obtain properties comparable to those of the examples.
また、実施例2において、MnO2、Gr205. F
ed。In addition, in Example 2, MnO2, Gr205. F
ed.
Ni○、C00及び5102を使用し製造したが、この
方法に限定されるもので7・まな(、Mn(COsh
。Although it was manufactured using Ni○, C00 and 5102, it is limited to this method.
.
Mn(OH)4 などの炭酸塩、水酸化物を使用して
製造しても実施例と同程度の・特性を得ることができる
。Even if carbonates and hydroxides such as Mn(OH)4 are used in production, properties comparable to those of the examples can be obtained.
発明の効果
以上のように本発明によれば、誘電率、絶縁抵抗及び絶
縁破壊電圧が高く、良好度Qにすぐれ、かつ温度係数の
小さい誘電体磁器を得ることがでキル。マタ、マンガン
、クロム、鉄、ニッケルコバルト及びケイ素の酸化物の
添加により焼成温度を低下させることができる。Effects of the Invention As described above, according to the present invention, it is possible to obtain a dielectric ceramic having a high dielectric constant, high insulation resistance, high dielectric breakdown voltage, excellent quality Q, and low temperature coefficient. The calcination temperature can be lowered by adding oxides of manganese, chromium, iron, nickel cobalt and silicon.
さらて、得られた誘電体磁器゛は高誘電率であるため、
素体をきわめて小形にすることができ、回路の微小化に
治効であり、特に薄板状にして積層セラミックコンデン
サ、ハイブリッド微小回路などの用途に適している。Furthermore, since the obtained dielectric porcelain has a high dielectric constant,
The element body can be made extremely small, which is effective in miniaturizing circuits, and it is particularly suitable for applications such as multilayer ceramic capacitors and hybrid microcircuits when made into a thin plate.
【図面の簡単な説明】
第1図は本発明にかかる主成分の組成範囲を説明する二
元図、第2図は本発明にかかる主成分の一般式をxSr
O −ycao−zTiO2と表わした時、X−0,3
0、Y = Oj9 、 Z = 0.61とし、副成
分子a205の含有量を16重量%丑で変化させた時の
特性の変化を示すグラフである。[Brief Description of the Drawings] Fig. 1 is a binary diagram explaining the composition range of the main component according to the present invention, and Fig. 2 shows the general formula of the main component according to the present invention xSr.
When expressed as O -ycao-zTiO2, X-0,3
0, Y = Oj9, Z = 0.61, and is a graph showing changes in characteristics when the content of subcomponent a205 is changed by 16% by weight.
Claims (2)
し、x+y+z=1.00)、x,y,zが以下に表わ
す各点a,b,c,dで囲まれるモル比の範囲を主成分
とする組成物に対し、副成分としてTa_2O_5 0
.1〜10.0重量%を含有することを特徴とする誘電
体磁器組成物。 ▲数式、化学式、表等があります▼(1) When expressed as the general formula xSrO-yCaO-zTiO_2 (however, x+y+z=1.00), the range of molar ratio where x, y, and z are surrounded by each point a, b, c, and d shown below is Ta_2O_50 as a subcomponent to the composition as a main component
.. A dielectric ceramic composition containing 1 to 10.0% by weight. ▲Contains mathematical formulas, chemical formulas, tables, etc.▼
ケイ素の酸化物からなる群の中から選ばれた少なくとも
1種を、それぞれMnO_2,Cr_2O_3,FeO
,NiO,CoO及びSiO_2に換算して、主成分の
0.05〜1.00重量%添加含有したことを特徴とす
る特許請求の範囲第1項記載の誘電体磁器組成物。(2) At least one selected from the group consisting of oxides of manganese, chromium, iron, nickel, cobalt, and silicon, respectively, is
, NiO, CoO and SiO_2, the dielectric ceramic composition according to claim 1, further contains 0.05 to 1.00% by weight of the main components.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1062519A JPH02242515A (en) | 1989-03-15 | 1989-03-15 | Dielectric porcelain composition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1062519A JPH02242515A (en) | 1989-03-15 | 1989-03-15 | Dielectric porcelain composition |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02242515A true JPH02242515A (en) | 1990-09-26 |
Family
ID=13202515
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1062519A Pending JPH02242515A (en) | 1989-03-15 | 1989-03-15 | Dielectric porcelain composition |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02242515A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5027993A (en) * | 1973-07-13 | 1975-03-22 | ||
JPS61291457A (en) * | 1985-06-14 | 1986-12-22 | タム・セラミックス・インコーポレイテッド | Dielectric composition |
-
1989
- 1989-03-15 JP JP1062519A patent/JPH02242515A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5027993A (en) * | 1973-07-13 | 1975-03-22 | ||
JPS61291457A (en) * | 1985-06-14 | 1986-12-22 | タム・セラミックス・インコーポレイテッド | Dielectric composition |
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