JPH02232978A - Semiconductor radiation detector and manufacture thereof - Google Patents

Abstract

PURPOSE:To protect the surface of a compound semiconductor crystal against a mechanical shock and to moderate stress inside the semiconductor crystal at the connection of leads by a method wherein an organic insulating film is formed to cover at least a side of the compound semiconductor crystal sensitive to radiation excluding an electrode. CONSTITUTION:A layer, deteriorated due to processing, on an opposed face of a P-type CdTe crystal 1 is removed, and then an organic insulating film is applied thereon. The film 2 is patterned to form a pattern window 5. After post-baking, a charge collecting electrode 3 and a back electrode 4 are formed using the film 2 as a mask to form a semiconductor radiation detector. The organic film 2 can be formed of polyimide, polyamide, or the like. A compound semiconductor crystal can be formed of CdTe, GaAs, HgI2, CdS, CdSe, CdSSe, or the like.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a semiconductor radiation detector used in radiation dosimeters, medical radiation diagnostic equipment, industrial nondestructive testing equipment, etc., and a method for manufacturing the same.

As is well known in the prior art, semiconductor radiation detectors include those composed of elemental semiconductors such as St and Ge, and those composed of elemental semiconductors such as St, Ge, etc.
S 1H g I a, C d S1C d S S
Some are made of compound semiconductors such as e. Among these, compound semiconductors generally have a large effective atomic number, so they provide a highly sensitive detector with high radiation absorption efficiency.

Also, since the energy gap is large, it is also a room temperature detector.

One of the important technologies for the practical application of semiconductor radiation detectors is protection of the semiconductor surface. A protective film is formed on the semiconductor surface using elements such as Si. For semiconductors, film formation techniques such as oxide films and nitride films have been completed, and for example, thermal oxidation and chemical vapor deposition (CVD) are used for Si.

However, since compound semiconductors have ionic bonds compared to elemental semiconductors such as Sl, conventional insulating film formation techniques cannot necessarily be applied as is.

For example, in compound semiconductors such as CdTe and GaAs, S102 and Si3! It is difficult to form a high-quality insulating film with excellent adhesion strength using L or the like.

Problems to be Solved by the Invention Due to the unique properties of compound semiconductors as described above, in semiconductor radiation detectors made of compound semiconductors, since compound semiconductors are relatively soft materials, the crystal surface tends to be easily scratched. led to deterioration. Additionally, stress such as pressure or ultrasonic waves is directly applied to the semiconductor crystal, resulting in deterioration of device characteristics.

For this reason, extreme care is required in handling, and the means for connecting leads to take out the charge generated in the semiconductor crystal by radiation to an external circuit system is limited, making it difficult to use connection methods that require pressure such as wire bonding. There was a problem.

Therefore, there has been a problem in that it is difficult to connect leads to minute-sized detectors or to connect high-density leads to multi-channel detectors.

Means for Solving the Problems In order to solve the above problems, the present invention provides a structure in which an organic insulating film is formed on at least the side of the semiconductor crystal on which the charge collection electrode is formed so as to cover the portion of the semiconductor surface other than the electrodes. shall be. Alternatively, a metal layer is further formed from the electrode to the insulating film.

In addition, as a means of realizing these configurations, one method is to laminate an organic insulating film provided with patterned windows for forming electrodes necessary for constructing a radiation detector on at least one surface of a semiconductor crystal, and then A manufacturing method is carried out in which each electrode is formed by a wet process using an organic insulating film as a mask material. Alternatively, a manufacturing method is further carried out in which metal is laminated from the portion of each electrode not covered with the organic insulating film to the organic insulating film to form a metal layer.

Function According to the present invention, the semiconductor surface is covered with an organic insulating film, so it is protected against mechanical impact, and stress is alleviated by the organic insulating film when performing lead connection methods such as wire bonding and film bonding. Ru.

Example Examples of these inventions will be described below.

(Embodiment 1) FIG. 1 is a cross-sectional perspective view of a semiconductor radiation detector according to an embodiment of the first invention. In FIG. 1, 1 is a semiconductor crystal, which is a p-type CdTe crystal in this example, 2 is an organic insulating film, which is polyimide in this example, and 3 is a charge collection electrode for collecting charges generated in the semiconductor crystal by incident radiation. In this embodiment, Pt, 4 is a back electrode, which is Pt in this embodiment. FIG. 2 is a sectional view showing the manufacturing process of the semiconductor radiation detector of the present invention by the manufacturing method of the fifth invention. In FIG. 2, 5 is a pattern window. Figure 2 (a) (b) below,
An embodiment of the present invention will be described using (c).

After the process-affected layer on the opposing surface of the p-type CdTe crystal 1 is removed by chemical treatment, an organic insulating film 2 is applied by spin coating as shown in FIG. 2(a). In this embodiment, the organic insulating film 2 is made of photosensitive polyimide. Further, the film thickness is, for example, 1 μ.

After pre-baking, a predetermined pattern window 5 is formed in the organic insulating film 2 by a photo process including pattern exposure and development, as shown in FIG. 2(b). The shape of the pattern window is the shape of the electrode necessary for constructing the semiconductor radiation detector.

Furthermore, the organic insulating film 2 is cured by post-baking.

Next, by performing electroless plating using the formed organic insulating film 2 as a mask, a charge collection electrode 3 and a back electrode 4 are simultaneously formed as shown in FIG. 2(C), thereby forming a semiconductor radiation detector. The electrode material is PT in this example.

A semiconductor radiation detector is manufactured through the above steps.

In the embodiments described above, the pt electrodes 3 and 4 were formed on the opposing surfaces of p-type CdTel by electroless plating, but the electrodes are not limited to this, and other metals such as AusPd1Ns may be used. That's fine.

Furthermore, although electrode formation by electroless plating has been described, electrode formation may be performed by other wet processes.

Further, although the organic insulating film 2 is made of polyimide, it is not limited to this, and may be other organic insulating materials having photosensitivity such as photosensitive polyamide.

Further, although the method for forming the organic insulating film is a suzen coating method, it is not limited to this, and other methods such as coating using a roll coater may be used.

Furthermore, the thickness of the organic insulating film 2 is not limited to 1 μm.

Further, in this embodiment, a homogeneous type semiconductor radiation detector in which Pt electrodes 3 and 4 were formed in ohmic contact with both opposing surfaces of p-type CdTel was explained, but the detector is not limited to this, and a surface barrier type can also be used. In the mold, at least the charge collection electrode side may be similarly cut.

Further, in this embodiment, the organic insulating film 2 was formed only on one side, but it may be formed on both sides.

Further, although the case where the semiconductor material is CdTe has been described, other compound semiconductors such as GaAs, Hgl2, CdS, CdSe, and CdSSe may be used.

(Example 2) FIGS. 3(a) to Cf') are cross-sectional views showing the manufacturing process of the semiconductor radiation detector of the first invention by the manufacturing method of the sixth invention.

In FIG. 3, the photoresist 8 is a pattern window formed in the photoresist 6. In FIG. Below, Figure 3 (a) - (
Examples of the present invention will be described using f).

After removing the process-affected layer on the opposing surface of the p-type CdTe crystal 1 by chemical treatment, an organic insulating film 2 is applied by spin coating as shown in FIG. 3(a). In this embodiment, the organic insulation film 2 is made of polyimide. Further, the film thickness is, for example, 1 μ. After preliminary curing of the slave insulating film 2 using a blibator, a photoresist 6 is applied onto the organic insulating film 2 by spin coating, as shown in FIG. 3(b). After the blebbing, a predetermined pattern window 8 is formed in the photoresist 6 by a photo process including pattern exposure and development, as shown in FIG. 3(C). The shape of the pattern window is the shape of the electrode necessary for constructing the semiconductor radiation detector.

Furthermore, the photoresist 6 is hardened by post-baking.

Next, using the photoresist 6 as a mask, the organic insulating film 2 is etched to form a pattern window 5 for forming an electrode, as shown in FIG. 3(d). Etching methods include wet etching using an alkaline solution such as hydrazine and dry etching using oxygen plasma.

Next, when electroless plating is performed, the charge collection electrode 3 and the back electrode 4 are simultaneously formed as shown in FIG. 3(e). The photoresist 6 is removed and the organic insulating film 2 is formed by post-baking.
A semiconductor radiation detector shown in FIG. 3Cf is formed by curing. The electrode material is Pt in this example.

A semiconductor radiation detector is manufactured through the above steps.

In this embodiment described above, the p-type CdTe 1 is formed by electroless plating on the opposing surface. The electrodes used were PT electrodes 3 and 4, but the electrodes are not limited to these.<,Au%Pds
It may be other metals such as Nt.

Further, although electrode formation by electroless plating has been described, electrode formation may be performed by other wet processes.

Further, although the organic insulating film 2 is made of polyimide, it is not limited to this, and other organic insulating materials such as polyamide may be used.

Further, although the organic insulating film 2 and the photoresist 8 are formed using the Subin coating method, the present invention is not limited to this, and other methods such as coating using a roll coater may be used.

Furthermore, the thickness of the organic insulating film 2 is not limited to 1 μm.

Further, in this embodiment, a homogeneous type semiconductor radiation detector in which pt electrodes 3 and 4 were formed in ohmic contact with both opposing surfaces of p-type CdTel was explained, but the detector is not limited to this, and a surface barrier type can also be used. The same method may be applied to at least the charge collection electrode side of the mold.

Further, in this embodiment, the organic insulating film 2 was formed only on one side, but it may be formed on both sides.

In addition, although the case where the semiconductor material is CdTe has been explained, GaAs, Hgls, CdS, CdSe, CdSSe
It may also be other compound semiconductors such as.

(Embodiment 3) FIG. 4 shows a cross-sectional perspective view of a semiconductor radiation detector which is an embodiment of the second invention. Note that in FIG. 4, 7 indicates a metal layer. Figures 5 (a), (b), (c), and (d) are the fifth
It is sectional drawing which shows the manufacturing process of the semiconductor radiation detector of this invention by the manufacturing method of this invention. Below, Figure 5 (a), (b)
), (c), and (d) will be used to explain embodiments of the present invention.

After removing the process-affected layer on the opposing surface of the p-type CdTe crystal 1 by chemical treatment, an organic insulating film 2 is applied by spin coating as shown in FIG. 5(a). In this embodiment, the organic insulating film 2 is made of photosensitive polyimide. Further, the film thickness is, for example, 1 μ.

After pre-baking, a predetermined pattern window 5 is formed in the organic insulating film 2 by a photo process including pattern exposure and development, as shown in FIG. 5(b). The shape of the pattern window is the shape of the electrode necessary for constructing the semiconductor radiation detector.

Furthermore, the organic insulating film 2 is cured by post-baking.

Next, when electroless plating is performed using the formed organic insulating film 2 as a mask, a charge collecting electrode 3 is formed as shown in FIG. 6(C).
and the back electrode 4 are formed at the same time to form a semiconductor radiation detector. The electrode material is PT in this example.

Furthermore, as shown in FIG. 5(d), a metal layer 7 is formed extending from the charge collection electrode 3 to the organic insulating film 2. The metal material is, for example, AI in this embodiment. The formation method includes, for example, laminating AI over the entire surface by vapor deposition, forming a pattern mask by photolithography, and then removing unnecessary portions of AI using a phosphoric acid etching solution to form a wiring pattern.

A semiconductor radiation detector is manufactured through the above steps.

In this embodiment described above, p-type. Opposing surface I of CdTel
! Although the electrodes formed by electroless plating were used as PT electrodes 3 and 4, they are not limited to this.
It may be other metals such as Ni.

Furthermore, although electrode formation by electroless plating has been described, electrode formation may be performed by other wet processes.

Furthermore, although the organic insulating film 2 is made of polyimide, it is not limited to this, and may be other organic insulating materials that are photosensitive, such as photosensitive polyamide.

Further, although the method for forming the organic insulating film is a spin coating method, it is not limited to this, and other methods such as coating by a roll coater may be used.

Furthermore, the thickness of the organic insulating film 2 is not limited to 1 μm.

Further, in this embodiment, a homogeneous type semiconductor radiation detector in which pt electrodes 3 and 4 were formed in ohmic contact with both opposing surfaces of p-type CdTel was explained, but the detector is not limited to this, and a surface barrier type can also be used. The same method may be applied to at least the charge collection electrode side of the mold.

Further, in this embodiment, the organic insulation WX2 was formed only on one side, but it may be formed on both sides.

In addition, although the case where the semiconductor material is CdTe has been explained, GaAS + ■gl2, CdS, CdSe. CdSS
Other compound semiconductors such as e may also be used.

Further, although the metal layer 7 is patterned by photo-etching, it is not limited to this, and mask vapor deposition or the like may also be used.

Moreover, the metal layer 7 is not limited to AI, but is also made of A Lh N IN
C usPd1 Any metal with good conductivity such as Pt or Ag1 may be used.

(Example 4) FIGS. 6(a) to 6(g) are cross-sectional views showing the manufacturing process of the semiconductor radiation detector of the second invention by the fabrication method of the sixth invention.

In FIG. 6, 7 is a pattern window. Figure 6 below (a
) to (f) will be used to describe embodiments of the present invention.

After removing the process-affected layer on the opposing surface of the p-type CdTe crystal 1 by chemical treatment, an organic insulating film 2 is applied by spin coating as shown in FIG. 6(a). In this embodiment, the organic insulating film 2 is made of polyimide. Further, the film thickness is, for example, 1 μ. After precuring the organic insulating film 2 by prebaking, a photoresist 6 is applied onto the organic insulating film 2 by spin coating, as shown in FIG. 6(b).

After pre-baking, a predetermined pattern window 8 is formed in the photoresist 6 by a photo process including pattern exposure and development, as shown in FIG. 6(C). The shape of the pattern window is the shape of the electrode necessary for constructing the semiconductor radiation detector.

Furthermore, the photoresist 6 is hardened by post-baking.

Next, the organic insulating film 2 is etched using the photoresist 6 as a mask to form a patterned window 5 for forming an electrode, as shown in FIG. 6(d). Etching methods include wet etching using an alkaline solution such as hydrazine and dry etching using oxygen plasma.

Next, when electroless plating is performed, the charge collection electrode 3 and the back electrode 4 are formed at the same time as shown in 6j9(e). The photoresist θ is removed and the organic insulating film 2 is hardened by baking to form the semiconductor radiation detector shown in FIG. 6(f). The electrode material is Pt in this example.

Furthermore, as shown in FIG. 6(d), a metal layer 7 is laminated extending from the charge collection electrode 3 to the organic insulating film 2. The metal material is, for example, A1 in this embodiment. The formation method is, for example, by laminating A1 on the entire surface by vapor deposition, forming a pattern mask by photolithography, and removing unnecessary portions of AI using a phosphoric acid etching solution to form a wiring pattern as shown in FIG. 6(g).

A semiconductor radiation detector is manufactured through the above steps.

In this embodiment described above, the electrodes formed by electroless plating on the opposing surfaces of the p-type CdTe 1 were the Pt electrodes 3 and 4, but the invention is not limited to this.
It may be other metals such as N1.

Furthermore, although electrode formation by electroless plating has been described, electrode formation may be performed by other wet processes.

Further, although the organic insulating film 2 is made of polyimide, it is not limited to this, and other organic insulating materials such as polyamide may be used.

In addition, the organic insulating film 2 and the photoresist θ were formed by spin coating, but this is not the case. However, other methods such as coating with a roll coater can also be used. good.

Furthermore, the thickness of the organic insulating film 2 is not limited to 1 μm.

Further, in this embodiment, a homogeneous type semiconductor radiation detector in which pt electrodes 3 and 4 were formed in ohmic contact with both opposing surfaces of p-type CdTel was explained, but the detector is not limited to this, and a surface-backed type can also be used. Even in the pn type, it is sufficient to carry out the same procedure at least on the charge collection electrode side.

Further, in this embodiment, the organic insulation WX2 was formed only on one side, but it may be formed on both sides.

In addition, although we have explained the case where the semiconductor material is CdTe, GaAs*11gls scds, CdSe, CdS
Other compound semiconductors such as Se may also be used.

Further, although the metal layer 7 is patterned by photo-etching, it is not limited to this, and mask vapor deposition or the like may also be used.

In addition, the metal layer 7 is not limited to A1, but A u1N 11C u1
Any metal with good conductivity such as Pds Pts Ags may be used.

(Embodiment 5) FIG. 7 shows a cross-sectional perspective view of a multi-channel semiconductor radiation detector which is an embodiment of the third invention.

In FIG. 7, 11 is a semiconductor crystal, and in this example, p-type C
dTe crystal, 12 is an insulating film made of polyimide in this embodiment. Reference numeral 13 denotes a charge collection electrode for collecting charges generated in the semiconductor crystal due to incident radiation, and in this example, P
t1 14 is a back electrode, which is pt in this embodiment. 8th
Figures (a), (b), and (C) are cross-sectional views showing the manufacturing process of the semiconductor radiation detector of the third invention by the manufacturing method of the fifth invention. In FIG. 8, 15 is a pattern window.

Figure 8 below (a), (b), (c)
An embodiment of the present invention will be described using the following.

After the process-affected layer is removed by chemical treatment on the opposing surface of the p-type CdTe crystal 1, an organic insulating layer 12 is applied by spin coating as shown in FIG. 8(a). In this example, organic insulation M
:12 is photosensitive polyimide. Also, the film thickness is, for example, 1
μ. After pre-beta, a plurality of patterned windows 15' are formed in the organic insulating film 12 by a photo process including pattern exposure and development, as shown in FIG. 8(b). The shape of the pattern window is the shape of the electrode necessary for constructing the semiconductor radiation detector.

Furthermore, the organic insulating film 12 is cured by post-baking.

Next, when electroless plating is performed using the formed insulating film 12 as a mask, a plurality of one-dimensionally arranged charge collection electrodes 13 and back electrodes 14 are simultaneously formed as shown in FIG. A radiation detector is formed. The electrode material is Pt in this example.

A semiconductor radiation detector is manufactured through the above steps.

In this embodiment described above, the PT electrodes 13 and 14 are formed by electroless plating on the opposing surfaces of the p-type CdTe 1.
However, it is not limited to this, and A uN P
It may be other metals such as dsNt.

Furthermore, although electrode formation by electroless plating has been described, electrode formation may be performed by other wet processes.

Furthermore, although the organic insulating film 12 is made of polyimide, it is not limited to this, and may be other organic insulating materials that have photosensitivity, such as photosensitive polyamide.

Further, although the method for forming the organic insulating film is a spin coating method, it is not limited to this, and other methods such as coating by a roll coater may be used.

Furthermore, the thickness of the organic insulating film 12 is not limited to 1 μm.

Further, in this embodiment, a homogeneous type semiconductor radiation detector in which Pt electrodes 13 and 14 were formed in ohmic contact on both opposing surfaces of p-type CdTel was described, but the detector is not limited to this, and a surface barrier type can also be used. The same method may be applied to at least the charge collection electrode side of the mold.

Further, in this embodiment, the organic insulating film 12 was formed only on one side, but it may be formed on both sides.

In addition, although we have explained the case where the semiconductor material is CdTe, GaAs, Hgl2, CdS, OdSe, CdSSe
It may also be other compound semiconductors such as.

Further, in this embodiment, a one-dimensional multi-channel semiconductor radiation detector is described, but the application is not limited to this, but can also be applied to a two-dimensional multi-channel semiconductor radiation detector in which charge collection electrodes 13 are arranged two-dimensionally. .

(Example 6) FIGS. 9(a) to 9(f) are cross-sectional views showing the manufacturing process of the semiconductor radiation detector of the third invention by the manufacturing method of the sixth invention.

In FIG. 9, 16 is a photoresist and 18 is a pattern window. Embodiments of the present invention will be described below using FIGS. 9(a) to 9(f).

After removing the process-affected layer on the opposing surface of the p-type CdTe crystal 11 by chemical treatment, the second. As shown in FIG. 9(a), an organic insulating film 12 is applied by spin coating. In this embodiment, the machine insulating film 12 is made of polyimide. Further, the film thickness is, for example, 1 μ.

After pre-curing the organic insulating film 12 by pre-baking,
As shown in FIG. 9(b), a photoresist 16 is applied onto the organic insulating film 12 by spin coating. After the preliminary beta, a plurality of pattern windows 18 are formed by a photo process including pattern exposure and development, as shown in FIG. 9(c).
is formed on the photoresist 16. The shape of the pattern window is the shape of the electrode necessary for constructing the semiconductor radiation detector.

Furthermore, the photoresist 16 is hardened by post-baking.

Next, using the photoresist 16 as a mask, the organic insulating film 2 is
is etched to form a pattern window 15 for forming an electrode, as shown in FIG. 9(d). Etching methods include wet etching using an alkaline solution such as hydrazine and dry etching using oxygen plasma.

Next, when electroless plating is performed, the charge collection electrode 13 and the back electrode 14 are simultaneously formed as shown in FIG. 9(e). Finally, the photoresist is removed and the organic insulating film 2 is hardened by baking to form the semiconductor radiation detector shown in FIG. 3(f). The electrode material is Pt in this example.

A semiconductor radiation detector is manufactured through the above steps.

In this embodiment described above, the electrodes formed by electroless plating on the opposing surfaces of p-type CdTe 1 1 are pt electrodes 13,
14, but it is not limited to this.
It may be other metals such as L Ni.

Furthermore, although electrode formation by electroless plating has been described, electrode formation may be performed by other wet processes.

Further, although the organic insulating film 12 is made of polyimide, it is not limited to this, and may be other insulating materials such as polyamide.

Further, although the organic insulating film 12 and the photoresist 16 are applied using a spin coating method, the present invention is not limited to this, and other methods such as application using a roll coater may be used.

Furthermore, the thickness of the insulating film 2 is not limited to 1 μm.

Further, in this embodiment, a homogeneous type semiconductor radiation detector in which Pt electrodes 13 and 14 were formed in ohmic contact on both opposing surfaces of a p-type CdTell was described, but the detector is not limited to this, and a surface barrier type can also be used. The same method may be applied to at least the charge collection electrode side of the mold.

Further, in this embodiment, the organic insulating film 12 was formed only on one side, but it may be formed on both sides.

In addition, although the case where the semiconductor material is CdTe has been described, GaAs. Hgl*, CdS, CdSe, CdSS
Other compound semiconductors such as e may also be used.

Further, in this embodiment, a one-dimensional multi-channel semiconductor radiation detector is described, but the application is not limited to this, but can also be applied to a two-dimensional multi-channel semiconductor radiation detector in which charge collection electrodes 13 are arranged two-dimensionally. .

(Embodiment 7) FIG. 10 shows a cross-sectional perspective view of a semiconductor radiation detector which is an embodiment of the fourth invention. Note that in FIG. 4, 27 indicates a metal layer. Figure 11 (a), (b), (c),
(d) is a sectional view showing the manufacturing process of the semiconductor radiation detector of the fourth invention by the manufacturing method of the semiconductor radiation detector of the sixth invention.

Embodiments of the present invention will be described below using FIGS. 11(a), (b), (c), and (d).

After removing the damaged layer on the opposing surface of the p-type CdTe crystal 21 by chemical treatment, an organic insulating film 22 is applied by spin coating as shown in FIG. 11(a). In this embodiment, the organic insulating film 22 is made of photosensitive polyimide.

Further, the film thickness is, for example, 1 μ. After prebaking, a plurality of patterned windows 25 are formed in the organic insulating film 22 as shown in FIG. 11(b) by a photo process including pattern exposure and development. The shape of the pattern window corresponds to the shape of the electrode necessary for constructing a semiconductor radiation detector.

Furthermore, the organic insulating film 22 is cured by post-baking.

Next, when electroless plating is performed using the formed organic insulating film 22 as a mask, a plurality of charge collection electrodes 23 and back electrodes 24 arranged one-dimensionally are simultaneously formed as shown in FIG. A detector is formed. The electrode material is the same as in this example. Then, it is pt.

Furthermore, as shown in FIG. 11(d), a metal layer 27 is independently laminated extending from the charge collection electrode 23 to the organic insulating film 22. The metal material is, for example, AI in this embodiment. The formation method is, for example, to layer AI over the entire surface by vapor deposition, then form a pattern mask (not shown) by photolithography, and then remove unnecessary portions of AI using a phosphoric acid etching solution to create wiring as shown in Figure 11(d). form a pattern.

A semiconductor radiation detector is manufactured through the above steps.

In this embodiment described above, the electrodes formed by electroless plating on the opposing surfaces of the p-type CdTe 21 are used as the pt electrodes 23 and 24.
However, it is not limited to this.
It may be other metals such as Ni.

Furthermore, although electrode formation by electroless plating has been described, electrode formation may be performed by other wet processes.

Further, although the organic insulating film 22 is made of polyimide, it is not limited to this, and may be other organic insulating materials having photosensitivity such as photosensitive polyamide.

Further, although the method for forming the organic insulating film 22 is a spin coating method, it is not limited to this, and other methods such as coating by a roll coater may be used.

Furthermore, the thickness of the organic insulating film 22 is not limited to 1 μm.

Further, in this embodiment, a homogeneous type semiconductor radiation detector in which Pt electrodes 23 and 24 were formed in ohmic contact with both opposing surfaces of a p-type CdTe 21 was explained, but the detector is not limited to this, and a surface barrier type can also be used. The same method may be applied to at least the charge collection electrode side of the mold.

Further, in this embodiment, the organic insulating film 22 was formed only on one side, but it may be formed on both sides. stomach.

In addition, although we have explained the case where the semiconductor material is CdTe, GaAs*Hglt, CdS, CdSe, CdSSe
It may also be other compound semiconductors such as.

Further, although the metal layer 27 is patterned by photo-etching, it is not limited to this, and mask vapor deposition or the like may also be used.

Furthermore, the metal layer 27 is not limited to AI, but may also be made of A ut N ts.
Any metal with good conductivity such as Cu1 Pd1 Pt1 Ag1 may be used.

Further, in this embodiment, a one-dimensional multi-channel semiconductor radiation detector is described, but the application is not limited to this, but can also be applied to a two-dimensional multi-channel semiconductor radiation detector in which charge collection electrodes 23 are arranged two-dimensionally. .

(Example 8) FIGS. 12(a) to 12(f) are cross-sectional views showing the manufacturing process of the semiconductor radiation detector of the fourth invention by the manufacturing method of the sixth invention.

In FIG. 12, 26 is a photoresist and 28 is a pattern window. Embodiments of the present invention will be described below using FIGS. 12(a) to 12(f).

After removing the damaged layer on the opposing surface of the p-type CdTe crystal 21 by chemical treatment, an organic insulating film 22 is applied by spin coating as shown in FIG. 12(a). In this embodiment, the organic insulating film 22 is made of polyimide. Further, the film thickness is, for example, 1 μ. Organic elimination by pre-baking,
After preliminary curing of the edge film 22, a photoresist 26 is applied onto the organic insulating film 22 by spin coating, as shown in FIG. 12(b). After the pre-baking, a plurality of patterned windows 27 are formed in the photoresist 26 as shown in FIG. 12(c) by a photo process including pattern exposure and development. The shape of the pattern window 27 is determined based on the shape of the semiconductor radiation detector. This is the shape of the electrode that is required.

Furthermore, the photoresist 26 is hardened by post-baking.

Next, using the photoresist 26 as a mask, the organic insulating film 2 is
is etched to form a pattern window 25 for forming an electrode, as shown in FIG. 12(d).

Etching methods include wet etching using an alkaline solution such as hydrazine and dry etching using oxygen plasma.

Next, when electroless plating is performed, the charge collection electrode 23 and the back electrode 24 are simultaneously formed as shown in FIG. 12(e).

Next, after removing the photoresist 2θ and hardening the organic insulating film 22 by baking, a metal layer 27 is formed independently extending from the charge collection electrode 23 to the organic insulating film 22, as shown in FIG. 12Cf). The metal material is, for example, AI in this embodiment.

The formation method is, for example, by layering AI on the entire surface by vapor deposition, then forming a pattern mask by photolithography, and then removing unnecessary parts of AI using a phosphoric acid etching solution.
2. A wiring pattern as shown in FIG. 2(f) is formed.

A semiconductor radiation detector is manufactured through the above steps.

In this embodiment described above, the electrodes formed by electroless plating on the opposing surfaces of the p-type CdTe 21 are used as the pt electrodes 23 and 24.
However, it is not limited to this.
It may be other metals such as Ni.

Furthermore, although electrode formation by electroless plating has been described, electrode formation may be performed by other wet processes.

Further, although the spine insulating film 22 is made of polyimide, it is not limited to this, and may be other photosensitive organic insulating materials such as photosensitive polyamide.

Further, although the method for forming the organic insulating film 22 is a spin coating method, it is not limited to this, and other methods such as coating by a roll coater may be used.

Furthermore, the thickness of the organic insulating film 22 is not limited to 1 μm.

Further, in this embodiment, a homogeneous type semiconductor radiation detector in which PT electrodes 23 and 24 were formed in ohmic contact on both opposing surfaces of a p-type CdTe 21 was described, but the detector is not limited to this, and a surface barrier type can also be used. The same method may be applied to at least the charge collection electrode side of the mold.

Further, in this embodiment, the organic insulating film 22 was formed only on one side, but it may be formed on both sides.

Although the case where the semiconductor material is CdTe has been explained, GaAs, Hgl2, CdS. Other compound semiconductors such as CdSerCdSSe may also be used.

Further, although the metal layer 27 is patterned by photo-etching, it is not limited to this, and mask vapor deposition or the like may also be used.

In addition, the metal layer 27 is not limited to AI, but also Au1Nis Cut.
Any metal with good conductivity such as Pd, Pt1, Ag1 etc. may be used.

Further, in this embodiment, a one-dimensional multi-channel semiconductor radiation detector is described, but the application is not limited to this, but can also be applied to a two-dimensional multi-channel semiconductor radiation detector in which charge collection electrodes 23 are arranged two-dimensionally. .

Effects of the Invention According to the present invention, it is possible to use a highly reliable and workable method that enables connection to minute parts such as wire bonding and high-density lead connection for lead connection, thereby miniaturizing the size of the detector. In addition, the detector can have multiple channels, expanding the range of applications of radiation detectors using compound semiconductors.

[Brief explanation of the drawing]

1 is a cross-sectional perspective view of a semiconductor radiation detector according to an embodiment of the first invention, FIG. 4 is a cross-sectional perspective view of a semiconductor radiation detector according to an embodiment of the second invention, and FIG. 7 is a cross-sectional perspective view of a semiconductor radiation detector according to an embodiment of the second invention. FIG. 10 is a cross-sectional perspective view of a semiconductor radiation detector according to an embodiment of the invention.
A cross-sectional perspective view of a semiconductor radiation detector according to an embodiment of the invention,
Figure 2 (a), (b), (c) and Figure 5 (a), (b)
), (c) (d) and Figure 8 (a), (b), (c
) and Figure 11 (a), (b), (c), (d) are the fifth
A cross-sectional view showing a method for manufacturing a semiconductor radiation detector according to the invention;
Figure 3 (a), (b), . (C), (d), (e
), (f) and Figure 6 (a), (bL (c) (
d), (e). (f), (g) and Figure 9 (a)
(b), (c), (d), (e), (f
), and Figure 12 (a), cb), (c), (d),
(e) and (f) are cross-sectional views showing a method for manufacturing a semiconductor radiation detector according to the sixth invention. 1, 11, 21...p-type CdTe crystal, 2, 12, 2
2... Organic insulating film, 3, 13, 23... Charge collection electrode, 4, 14, 24... Back electrode, 5, 8, 15, 1
8, 25, 28... pattern window, 6, 18, 26...
・Photoresist, 7, 17, 27. ．． ．． metal layer. Name of agent Patent attorney Shigetaka Awano (1 person) Figure 11 Figure 12

Claims (10)

[Claims] (1) A semiconductor radiation detector characterized in that an organic insulating film is formed on at least one surface of a compound semiconductor crystal sensitive to radiation so as to cover the portion excluding the electrode. (2) An organic insulating film is formed on at least one surface of a compound semiconductor crystal sensitive to radiation so as to cover the part excluding the electrode, and a metal layer is further formed from the electrode on the organic insulating film. semiconductor radiation detector. (3) A plurality of electrodes arranged one-dimensionally or two-dimensionally is provided on at least one surface of a radiation-sensitive compound semiconductor crystal, and an organic insulating film is formed to cover the part except for the electrodes. A multi-channel semiconductor radiation detector. (4) A plurality of electrodes arranged one-dimensionally or two-dimensionally is provided on at least one surface of a radiation-sensitive compound semiconductor crystal, an organic insulating film is formed so as to cover the part except for the electrodes, and A multi-channel semiconductor radiation detector characterized by forming a metal layer from an electrode to an organic insulating film. (5) Using an organic insulating film formed on at least one surface of a radiation-sensitive compound semiconductor crystal so as to leave a portion of the semiconductor crystal and cover the other surface as a mask material, an electrode pattern is formed by a wet process. A method of manufacturing a semiconductor radiation detector characterized by forming a semiconductor radiation detector. (6) Using an organic insulating film formed on at least one surface of a radiation-sensitive compound semiconductor crystal so as to leave a portion of the semiconductor crystal and cover the other surface as a mask material, an electrode pattern is formed by a wet process. 1. A method for manufacturing a semiconductor radiation detector, comprising forming a semiconductor radiation detector, and further forming a metal film extending from an electrode onto an organic insulating film. (7) The semiconductor radiation detector according to claim 1, 2, 3 or 4, wherein the organic insulating film is polyimide or polyamide. (8) Semi-compound conductor crystals include CdTe, GaAs, Hg
The semiconductor radiation detector according to claim 1, 2, 3, 4, or 7, characterized in that it is I_2, CdS, CdSe, or CdSSe. (9) Manufacturing the semiconductor radiation detector according to claim 5 or 6, characterized in that a photosensitive material is used for the organic insulating film, and a pattern window is created in a part of the film in a single photo process. Method. (10) A mask is formed on the organic insulating film by a photo process, and then a window for forming an electrode by a wet process is formed in a part of the organic insulating film by etching. A method for manufacturing a semiconductor radiation detector.