JPH0221674A - Optical semiconductor device and its manufacture - Google Patents
Optical semiconductor device and its manufactureInfo
- Publication number
- JPH0221674A JPH0221674A JP63170639A JP17063988A JPH0221674A JP H0221674 A JPH0221674 A JP H0221674A JP 63170639 A JP63170639 A JP 63170639A JP 17063988 A JP17063988 A JP 17063988A JP H0221674 A JPH0221674 A JP H0221674A
- Authority
- JP
- Japan
- Prior art keywords
- cap
- optical semiconductor
- side wall
- welding
- stem
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 34
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000003466 welding Methods 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 10
- 206010034960 Photophobia Diseases 0.000 claims 1
- 208000013469 light sensitivity Diseases 0.000 claims 1
- 238000003825 pressing Methods 0.000 claims 1
- 238000007789 sealing Methods 0.000 description 10
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Landscapes
- Led Device Packages (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は光半導体装置とその製造方法に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to an optical semiconductor device and a method for manufacturing the same.
第4図は従来の光半導体装置の一例の断面図である。 FIG. 4 is a sectional view of an example of a conventional optical semiconductor device.
光半導体装置は、外部リードのついたステムの上方に発
光ダイオードチップ4を搭載したステム1.と、上面中
央に球レンズ7を有する円筒状のキャップ23をステム
16の側面に覆せ、二つの間隙部に封止用の樹脂部12
.を有して構成されている。The optical semiconductor device includes a stem 1.A stem 1.A light emitting diode chip 4 is mounted above the stem with external leads. Then, a cylindrical cap 23 having a ball lens 7 at the center of the upper surface can be placed over the side surface of the stem 16, and a sealing resin part 12 is placed in the gap between the two.
.. It is configured with
一/Rに、この種の容器を用いた光学調整固定・封入方
法には、抵抗溶接、樹脂封止、半田封止レーザビーム溶
接などがある。First, optical adjustment fixing and sealing methods using this type of container include resistance welding, resin sealing, solder sealing laser beam welding, and the like.
このうち樹脂封止及び半田封止は、ステム1aとキャッ
プ24の間隙部を樹脂又は半田で埋める事により、三次
元の光学調整固定と封止を行なう方法であり、今までの
光学調整を要する容器には最も多く使われている。Among these, resin sealing and solder sealing are methods for fixing and sealing three-dimensional optical adjustment by filling the gap between the stem 1a and the cap 24 with resin or solder, which requires conventional optical adjustment. Most commonly used for containers.
上述した従来の光半導体装置は、製造工程の光学調整固
定・封入方法として各種あるが、それぞれ下記の問題を
持っていた。In the conventional optical semiconductor device described above, there are various methods for fixing and enclosing optical adjustment in the manufacturing process, but each of them has the following problems.
まず、樹脂封止及び半田封止を用いた場合は、気密性の
信頼度に欠けると共に、光学調整固定後の安定性につい
ても信頼度が低いという欠点があった。First, when resin sealing and solder sealing are used, there is a drawback that not only the reliability of airtightness is lacking, but also the reliability of stability after optical adjustment and fixation is low.
また抵抗溶接は、気密性は非常に安定しているが、キャ
ップとステムを圧着しながら溶接するので溶接前後ステ
ムとキャップの相対位置がずれ易く、高精度の光軸調整
固定に不適であると同時に、三次元的な光学調整固定も
難しいという欠点があった。In addition, resistance welding has very stable airtightness, but since the cap and stem are welded while being crimped, the relative position of the stem and cap before and after welding tends to shift, making it unsuitable for highly accurate optical axis adjustment and fixing. At the same time, it also had the disadvantage that it was difficult to fix the three-dimensional optical adjustment.
またレーザビーム溶接は、溶接前後の相対位置精度が高
く三次元的な光学調整固定も出来るが、スポット溶接の
なめにステムとキャップの全周の溶接に時間がかかり、
またステムとキャップの固定系にも回転機能を要する等
の欠点があった。In addition, laser beam welding has high relative position accuracy before and after welding and can perform three-dimensional optical adjustment and fixing, but it takes time to weld the entire circumference of the stem and cap due to spot welding.
Further, there were drawbacks such as the need for a rotation function in the fixing system of the stem and the cap.
本発明の目的は、光学調整固定・封入が容易でかつ気密
性の信頼度の高い光半導体装置とその製造方法を提供す
ることにある。An object of the present invention is to provide an optical semiconductor device that is easy to fix and encapsulate for optical adjustment and has high reliability in airtightness, and a method for manufacturing the same.
本発明の光半導体装置は、光半導体チップを搭載したス
テムと、底面が該ステムの周縁部上面に気密溶接された
還部を有し側壁下部よりも直径が細い側壁上部との中間
に蛇腹状の可動部を設けかつ上面中央に光導入部を設け
るための開孔部を有する内部キャップと、下部内壁が前
記側壁下部に溶接されかつ上部側壁に複数の内部キャッ
プ位置調整孔を有する外部キャップとを含んで構成され
ている。The optical semiconductor device of the present invention has a bellows-like shape in the middle between a stem on which an optical semiconductor chip is mounted and an upper side wall having a bottom surface hermetically welded to the upper surface of the periphery of the stem and having a smaller diameter than the lower side wall. an inner cap having a movable part and an opening for providing a light introduction part in the center of the upper surface; and an outer cap having a lower inner wall welded to the lower part of the side wall and having a plurality of inner cap position adjustment holes in the upper side wall. It is composed of:
また、本発明の光半導体装置の製造方法は、(^) 光
半導体チップを搭載したステムの周縁部上面に底面が気
密溶接され、かつ側壁中間に可動部を有する内部キャッ
プの上部を外部キャップを介して加圧し前記可動部を変
形して上下方向の光感度位置調整する工程、
(B) 前記外部キャップの側壁の内部キャップ位置
調整孔を通じて前記内部キャップの側壁を加圧して前記
可能を変形して水平方向の光感度位置調整する工程、
(C) 前記外部キャップの内壁と前記内部キャップ
の外壁をレーザスポット溶接により固定する工程、
を含んで構成されている。Furthermore, the method for manufacturing an optical semiconductor device of the present invention is as follows: (B) pressurizing the side wall of the inner cap through the inner cap position adjustment hole in the side wall of the outer cap to deform the movable portion; (C) fixing the inner wall of the outer cap and the outer wall of the inner cap by laser spot welding.
次に、本発明の実施例について図面を参照して説明する
。Next, embodiments of the present invention will be described with reference to the drawings.
第1図(a)〜(C)は本発明の第1の実施例の上面図
、側面図及びA−A’線断面図である。FIGS. 1(a) to 1(C) are a top view, a side view, and a sectional view taken along the line AA' of a first embodiment of the present invention.
光半導体装置は、発光ダイオードチップ4を搭載したス
テム1と、ステム1と組合せて気密封止する内部キャッ
プ2とさらに内部キャップ2に覆せる外部キャップ3と
を含んで構成されている。The optical semiconductor device includes a stem 1 on which a light emitting diode chip 4 is mounted, an inner cap 2 that is hermetically sealed in combination with the stem 1, and an outer cap 3 that can be covered by the inner cap 2.
内部キャップ2は円筒状で底部にはステム1の周縁部上
面に抵抗溶接を行なう為のキャップつば5を有し、その
つば5の上部方向に細くしぼった部分に変形可能な様に
肉厚のうすい蛇腹部6を有し、この内部キャップ2の上
部中央の開孔部には球レンズ7が低融点ガラスでシール
封着されている。The internal cap 2 has a cylindrical shape and has a cap flange 5 at the bottom for resistance welding to the upper surface of the peripheral edge of the stem 1. The inner cap 2 has a thin bellows part 6, and a ball lens 7 is sealed in an opening at the center of the upper part of the inner cap 2 with low melting point glass.
外部キャップ3は、内部キャップ2の側壁下部に内接す
る大きさの円筒で、キャップ3の上面部には、球レンズ
7を通った光りを通すガイド穴8をあけ、その上部側壁
にも内部キャップ位置調整孔L9が開ちれている。The outer cap 3 is a cylinder of a size that is inscribed in the lower side wall of the inner cap 2. A guide hole 8 is formed in the upper surface of the cap 3 through which light passes through the ball lens 7, and the inner cap is also formed on the upper side wall. Position adjustment hole L9 is open.
第2図は第1図の光半導体装置の製造方法を説明するた
めの光半導体装置の容器と製造治具の断面模式図である
。FIG. 2 is a schematic cross-sectional view of a container and a manufacturing jig for an optical semiconductor device for explaining the method for manufacturing the optical semiconductor device shown in FIG.
まず最初に、発光ダイオードチップ4を搭載したステム
1に内部キャップ2を抵抗溶接により溶接部12を設は
容器の気密シールを確保する。First, a welding part 12 is attached to the inner cap 2 by resistance welding to the stem 1 on which the light emitting diode chip 4 is mounted to ensure an airtight seal of the container.
次に、外部キャップ3を内部キャップ2に覆せ、その側
壁の内部キャップ位置調整穴9に二重になった調整棒1
3.14を通す。Next, the outer cap 3 is placed over the inner cap 2, and the double adjustment rod 1 is inserted into the inner cap position adjustment hole 9 on the side wall.
Pass 3.14.
調整棒13で外部キャップ3をF方向に押し下げる事に
よって内部キャップ2の蛇腹部6を変形してZ軸方向を
、また調整棒14で内部キャップ2の側壁f、f’方向
などに押す事によりX、Y方向の位置を動かし、球レン
ズ7と発光ダイオードチップ4との相対位idを調整し
、それをビジコン15でモニタして最適位置を求める。By pushing down the outer cap 3 in the F direction with the adjustment rod 13, the bellows part 6 of the inner cap 2 is deformed in the Z-axis direction, and by pushing the inner cap 2 in the direction of the side walls f, f', etc. with the adjustment rod 14. The position in the X and Y directions is moved to adjust the relative position ID between the ball lens 7 and the light emitting diode chip 4, and this is monitored by the vidicon 15 to find the optimum position.
球レンズ7と発光ダイオードチップ4の最適位置関係が
決まったら、レーザビームガイド16がら溶接用レーザ
のパルスビームeを照射することにより、内部キャップ
2と外部キャップ3とを重ね合わせて溶接固定部10.
を形成する。Once the optimum positional relationship between the ball lens 7 and the light emitting diode chip 4 has been determined, by irradiating the pulse beam e of the welding laser through the laser beam guide 16, the inner cap 2 and the outer cap 3 are overlapped and welded to the fixing part 10. ..
form.
この様にして気密シールは内部キャップ2で、また光学
調整は外部キャップ3の溶接により行なうことが出来る
。In this way, hermetic sealing can be achieved with the inner cap 2 and optical adjustment can be achieved by welding the outer cap 3.
第3図は本発明の第2の実施例の断面図である。FIG. 3 is a sectional view of a second embodiment of the invention.
基本的な容器の構成は第1の実施例と同様であるが、こ
の例では光半導体素子として面発光ダイオード4aを使
用し、光ガイドとしてセルフォックレンズ7aを使用し
ている。The basic structure of the container is the same as that of the first embodiment, but in this example, a surface emitting diode 4a is used as the optical semiconductor element, and a selfoc lens 7a is used as the light guide.
内部キャップ2には、このレンズを固定する為、フェル
ール(ferrule)11がついている点が第1の実
施例と異っている。This embodiment differs from the first embodiment in that the inner cap 2 is provided with a ferrule 11 for fixing the lens.
製造方法は第1の実施例と同様であるが、この構造の光
半導体装置用の容器は、光素子にフェルール11がつい
ているので、光ファイバと組み合わせる場合に、第1の
実施例よりも簡単な構造の部品で組み合わせる事が出来
る利点がある。The manufacturing method is the same as in the first embodiment, but since the optical semiconductor device container with this structure has a ferrule 11 attached to the optical element, it is easier to combine it with an optical fiber than in the first embodiment. It has the advantage of being able to be combined with parts with similar structures.
以上説明したように本発明は、抵抗溶接とレーザビーム
溶接を組合せて用いる事により、光半導体装置について
抵抗溶接による高い気密性と、レーザビーム溶接の高精
度で信頼度の高い三次元的な光学調整固定性とを同時に
達成できるという効果が得られる。As explained above, the present invention uses a combination of resistance welding and laser beam welding to provide optical semiconductor devices with high airtightness due to resistance welding and the highly accurate and reliable three-dimensional optical properties of laser beam welding. The effect of achieving adjustment and fixity at the same time is obtained.
・・・上面溶接部、11・・・フェルール、13.14
・・・調整棒、l・・・レーザビーム。...Top surface welding part, 11...Ferrule, 13.14
...adjustment rod, l...laser beam.
第1図(a)〜(C)は本発明の第1の実施例の上面図
、側面図及びA−A’線断面図、第2図は第1図の光半
導体装置の製造方法を説明するための光半導体装置の容
器と製造治具の断面模式図、第3図は本発明の第2の実
施例の断面図、第4図は従来の光半導体装置の一例の断
面図である。
1・・・ステム、2・・・内部キャップ、3・・・外部
キャップ、4・・発光ダイオードチップ、5・・・キャ
ップつば、6・・・蛇腹部、7・・・球レンズ、7a・
・セルフオニツクレンズ、8・・・ガイド穴、9・・・
内部キャップ位置調整孔、10.・・・側壁溶接部、1
0b(b)
万
図
tC)
声
図FIGS. 1(a) to (C) are a top view, a side view, and a cross-sectional view taken along line A-A' of the first embodiment of the present invention, and FIG. 2 illustrates a method for manufacturing the optical semiconductor device of FIG. 1. FIG. 3 is a cross-sectional view of a second embodiment of the present invention, and FIG. 4 is a cross-sectional view of an example of a conventional optical semiconductor device. DESCRIPTION OF SYMBOLS 1... Stem, 2... Internal cap, 3... External cap, 4... Light emitting diode chip, 5... Cap brim, 6... Bellows part, 7... Ball lens, 7a.
・Self Onitsuku Cleanse, 8...Guide hole, 9...
Internal cap position adjustment hole, 10.・・・Side wall welded part, 1
0b(b) ManzutC) Voice diagram
Claims (2)
周縁部上面に気密溶接された還部を有し側壁下部よりも
直径が細い側壁上部との中間に蛇腹状の可動部を設けか
つ上面中央に光導入部を設けるための開孔部を有する内
部キャップと、下部内壁が前記側壁下部に溶接されかつ
上部側壁に複数の内部キャップ位置調整孔を有する外部
キャップとを含むことを特徴とする光半導体装置。(1) A bellows-shaped movable part is provided between the stem on which the optical semiconductor chip is mounted and the upper part of the side wall whose bottom surface has a return part hermetically welded to the upper surface of the periphery of the stem and whose diameter is narrower than the lower part of the side wall. and an inner cap having an opening for providing a light introduction part in the center of the upper surface, and an outer cap having a lower inner wall welded to the lower part of the side wall and having a plurality of inner cap position adjustment holes in the upper side wall. Optical semiconductor device.
底面が気密溶接され、かつ側壁中 間に可動部を有する内部キャップの上部を 外部キャップを介して加圧し前記可動部を 変形して上下方向の光感度位置調整する工 程、 (B)前記外部キャップの側壁の内部キャップ位置調整
孔を通じて前記内部キャップの側 壁を加圧して前記可部を変形して水平方向 の光感度位置調整する工程、 (C)前記外部キャップの内壁と前記内部キャップの外
壁をレーザスポット溶接により 固定する工程、 を含むことを特徴とする光半導体装置の製造方法。(2) (A) Pressure is applied to the upper part of an internal cap, the bottom of which is hermetically welded to the upper surface of the periphery of the stem on which the optical semiconductor chip is mounted, and which has a movable part in the middle of the side wall, through the external cap to deform the movable part. (B) applying pressure to the side wall of the inner cap through the inner cap position adjustment hole in the side wall of the outer cap to deform the flexible part and adjusting the light sensitivity position in the horizontal direction; A method for manufacturing an optical semiconductor device, comprising: (C) fixing an inner wall of the outer cap and an outer wall of the inner cap by laser spot welding.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63170639A JPH0221674A (en) | 1988-07-08 | 1988-07-08 | Optical semiconductor device and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63170639A JPH0221674A (en) | 1988-07-08 | 1988-07-08 | Optical semiconductor device and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0221674A true JPH0221674A (en) | 1990-01-24 |
Family
ID=15908603
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63170639A Pending JPH0221674A (en) | 1988-07-08 | 1988-07-08 | Optical semiconductor device and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0221674A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004119045A (en) * | 2002-09-24 | 2004-04-15 | Osram-Melco Ltd | Lighting apparatus |
CN103794711A (en) * | 2014-01-28 | 2014-05-14 | 海宁伊满阁太阳能科技有限公司 | LED suitable for laser welding |
-
1988
- 1988-07-08 JP JP63170639A patent/JPH0221674A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004119045A (en) * | 2002-09-24 | 2004-04-15 | Osram-Melco Ltd | Lighting apparatus |
CN103794711A (en) * | 2014-01-28 | 2014-05-14 | 海宁伊满阁太阳能科技有限公司 | LED suitable for laser welding |
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