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JPH02215522A - Composite laminated film - Google Patents

Composite laminated film

Info

Publication number
JPH02215522A
JPH02215522A JP1036896A JP3689689A JPH02215522A JP H02215522 A JPH02215522 A JP H02215522A JP 1036896 A JP1036896 A JP 1036896A JP 3689689 A JP3689689 A JP 3689689A JP H02215522 A JPH02215522 A JP H02215522A
Authority
JP
Japan
Prior art keywords
film
stress
carbon
laminated
silicon nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1036896A
Other languages
Japanese (ja)
Other versions
JPH07102640B2 (en
Inventor
Kenji Ito
健二 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP1036896A priority Critical patent/JPH07102640B2/en
Publication of JPH02215522A publication Critical patent/JPH02215522A/en
Priority to US07/749,441 priority patent/US5227196A/en
Publication of JPH07102640B2 publication Critical patent/JPH07102640B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PURPOSE:To stick a film consisting mainly of a carbon film onto the surface to be formed, by a method wherein the film, whose stress is the lowest, out of the films to be laminated is formed by coming directly into contact with a board, a film, whose stress is low next to that of the first film, is formed over the first film and the film whose stress is higher is formed likewise in order. CONSTITUTION:Composite laminated films 23 are formed of a laminated structure comprised of silicon nitride and carbon films 24, 25 on a ground base material 22. Even if a thickness is varied from 50Angstrom to 5,000Angstrom in a laminated ply of silicon nitride, the same falls within a range of compression stress of 1X10<9>dyn/cm<2> to 2.7X10<9>dyn/cm<2> and does not shown so much dependence on a film thickness. However, the dependence of the film thickness of a silicon nitride film of a lower layer is generated, the whole stress in a sphere where the film thickness is thin is great, and mitigation effect is not displayed, by laminating the carbon film by 5,000Angstrom . However, even though compression stress is same, the whole stress is reduced, in a film thickness sphere around thousands of Angstrom .

Description

【発明の詳細な説明】 「発明の利用分野」 本発明になる複合被膜は下地基材、特に酸化物表面を有
する基材に対し界面特性、特に密着性を向上させ炭素ま
たは炭素を主成分とする被膜(以下炭素系被膜という)
の特徴である耐摩耗性、高平滑性、高硬度等の開時性を
最大限に引き出すものである。
Detailed Description of the Invention "Field of Application of the Invention" The composite coating of the present invention improves interfacial properties, especially adhesion, to a base substrate, especially a substrate having an oxide surface. coating (hereinafter referred to as carbon-based coating)
This maximizes the opening characteristics of the steel, such as wear resistance, high smoothness, and high hardness.

「従来技術」 従来より、多種多様な基材に炭素系被膜を形成すること
が試みられているが、下地基材の違いによって必ずしも
満足のいく界面特性特に密着性が得られていないのが現
状であり、その為炭素系被膜の長所が十分発揮できず、
新しい技術の開発が急がれている。
``Prior Art'' Previous attempts have been made to form carbon-based films on a wide variety of base materials, but the current situation is that satisfactory interfacial properties, especially adhesion, cannot always be achieved due to differences in the underlying base materials. Therefore, the advantages of the carbon-based coating cannot be fully demonstrated.
There is an urgent need to develop new technologies.

「従来技術の問題点」 従来の単層炭素系被膜はそれを応用する上で下地基材と
の界面密着性が悪く、例えば350℃以上の高温で形成
された炭素膜を室温に戻した際に炭素膜が脱離やはく離
してしまうあるいは室温で形成された炭素膜を400°
C以上の高温で熱処理した場合、部分的に斑点状のはく
離や被膜の脱離が生じてしまう等のものである。前者は
一般に熱応力といわれるもので、基板との熱膨張(収縮
)率の差により応力が内在してしまうもので、後者は膜
中のC−H結合(水素含有量)の減少により、水素によ
る応力を緩和する効果が低下することによるものである
``Problems with conventional technology'' Conventional single-layer carbon films have poor interfacial adhesion with the underlying substrate, for example, when a carbon film formed at a high temperature of 350°C or higher is returned to room temperature. The carbon film may detach or peel off, or the carbon film formed at room temperature may be heated to 400°.
When heat-treated at a high temperature of C or higher, spotty peeling or detachment of the film may occur in some areas. The former is generally referred to as thermal stress, and stress is inherent due to the difference in thermal expansion (contraction) rate with the substrate, while the latter is due to a decrease in the C-H bonds (hydrogen content) in the film, resulting in hydrogen stress. This is because the effect of relieving stress is reduced.

本発明は以上のような問題点を解決し、炭素系被膜を主
成分とする被膜を被形成面上に密着性良く設けることを
目的としたものである。
The present invention aims to solve the above-mentioned problems and to provide a coating mainly composed of a carbon-based coating on a surface to be formed with good adhesion.

〔問題を解決すべき手段〕[Means to solve the problem]

本発明は基板上に2以上の被膜を積層させた複合被膜に
おいて、基板に接した層には積層する被膜の中で最も内
部応力の小さい被膜が設けられ、積層方向に基板から離
れていくにしたがって順次内部応力の大きな被膜を積層
させることで上記の目的を達成したものである。
In the present invention, in a composite coating in which two or more coatings are laminated on a substrate, the layer in contact with the substrate is provided with a coating having the smallest internal stress among the laminated coatings, and as the layer moves away from the substrate in the lamination direction, Therefore, the above objective is achieved by sequentially laminating coatings with large internal stresses.

すなわち基板に直接接して形成する被膜には、積層する
被膜のうちで最も応力の小さいものを形成させ、その被
膜の上につぎに応力の小さいものを形成させるというよ
うに順次応力の大きいものを形成させるのである。
In other words, for the coatings that are formed in direct contact with the substrate, the one with the lowest stress among the stacked coatings is formed, and then the one with the lowest stress is formed on top of that coating, and so on. Let it form.

本発明は例えば炭素系被膜について考えるとき、単層で
議論するのではなく、被形成面上に密着性良くまた被形
成面に対して整合性良く設け、結果として炭素または炭
素を主成分とする被膜の長所を最大源に発揮できる複合
積層被膜を形成するものであり、熱応力と膜中水素含有
量の相対的関係を出発原料気体の選択及び成膜条件によ
って制御し、最終的には膜の残留応力をコントロールす
ることで、前記目的を達成するものである。
For example, when considering a carbon-based coating, the present invention does not discuss it in terms of a single layer, but rather provides it on the surface to be formed with good adhesion and good consistency to the surface to be formed, and as a result, the film has carbon or carbon as the main component. This method forms a composite laminated film that can maximize the advantages of the film, and the relative relationship between thermal stress and hydrogen content in the film is controlled by the selection of the starting material gas and film formation conditions, and the final film is The above objective is achieved by controlling the residual stress of

以下実施例に従って説明する。The following will be explained according to examples.

〔実施例〕〔Example〕

本実施例においては、基板に接した層に窒化珪素を形成
させ、その上に炭素系被膜を形成させた。
In this example, silicon nitride was formed as a layer in contact with the substrate, and a carbon-based film was formed thereon.

第1図は平行平板型プラズマ装置で、ガス系(1)にお
いて、まず下地基材との界面を構成する窒化珪素を形成
する為に、反応性気体である珪化水素気体例えばシラン
、ジシランを(2)より窒素、アンモニアを(4)より
流量計(8)パルプ(9)を介して、ノズル0のより反
応系ODO中に導入する。
Figure 1 shows a parallel plate type plasma apparatus.In the gas system (1), a reactive gas such as hydrogen silicide gas such as silane or disilane ( 2) Nitrogen and ammonia are introduced into the reaction system ODO from nozzle 0 through the flowmeter (8) and pulp (9) from (4).

一方炭素系被膜を形成する際は反応性気体である炭化水
素気体を(3)より、窒素を(4)より流量計(8)バ
ルブ(9)を介して、同様に導入する。
On the other hand, when forming a carbon-based film, a hydrocarbon gas as a reactive gas is introduced from (3), and nitrogen is introduced from (4) through a flow meter (8) and a valve (9) in the same manner.

炭化水素気体としては例えばメタン、エタン、エチレン
、メタン系炭化水素(CnHz−4g)等の気体または
珪素を一部に含んだ場合はテトラメチルシラン((CH
z) n5i)、テトラエラルシラン((ctus) 
4Si)のような炭化珪素であっても、また四塩化炭素
(CC14)のような塩化炭素であってもよい。
Examples of hydrocarbon gases include gases such as methane, ethane, ethylene, and methane hydrocarbons (CnHz-4g), or tetramethylsilane ((CH
z) n5i), tetraeralsilane ((ctus)
It may be silicon carbide such as 4Si) or carbon chloride such as carbon tetrachloride (CC14).

前記被膜のエツチング用気体である三弗化炭素を(5)
より、酸素を(6)より、また下地基材によっては、プ
ラズマクリーニングが必要である為前処理用気体として
、不活性気体例えばアルゴン(7)を導入することも可
能である。
Carbon trifluoride (5), which is a gas for etching the film,
It is also possible to introduce oxygen (6) or, depending on the base material, an inert gas such as argon (7) as a pretreatment gas since plasma cleaning is required.

反応系00では減圧下にて、窒化珪素被膜、炭素系被膜
の成膜およびそれらのエツチング処理を行う0反応系θ
Dでは第1の電極0■、第2の電極04すなわち高周波
給電側に設置する一対の電極03)、Q4)間には、高
周波電源(16)、マツチングトランス07)。
In reaction system 00, a silicon nitride film and a carbon-based film are formed and their etching process is performed under reduced pressure.
In D, a high frequency power source (16) and a matching transformer 07) are installed between the first electrode 0■ and the second electrode 04, that is, a pair of electrodes 03) and Q4) installed on the high frequency power supply side.

直流バイアス電源0のより、電気エネルギーが加えられ
プラズマ0ωが発生する。
Electrical energy is applied by the DC bias power source 0, and plasma 0ω is generated.

その結果所望の窒化珪素被膜および炭素系被膜が形成さ
れる。
As a result, the desired silicon nitride film and carbon-based film are formed.

反応後の不要物は排気系の圧力調整パルプ09.ターボ
分子ポンプ(至)、ロータリーポンプ(21)を経て排
気される。
Unwanted materials after the reaction are removed from the exhaust system using pressure regulating pulp 09. It is exhausted through a turbo molecular pump (to) and a rotary pump (21).

以上により第2図に示す下地基材(22)上に複合積層
被膜(23)が窒化珪素(24)、炭素系被膜(25)
による積層構造で形成され従来の問題を解決すべく、被
膜形成方法が確立されるものである。
As a result of the above, the composite laminated film (23) is formed on the underlying base material (22) shown in FIG.
A method for forming a film was established to solve the problems of the conventional method.

本実施例において、成膜条件は、窒化珪素被膜では、反
応温度150℃〜350℃1反応圧力o、oi〜0.5
torr、高周波電力密度0.1〜0.3W/cmgセ
ルフバイアス電圧−150〜−250vであり、原料気
体である5iHa、Ntは5ins/Ng比を0.05
〜0.5の範囲で可変し、化学量論的組成比を制御し膜
中水素含有量も同様に膜応力との兼ね合いにおいてコン
トロールすることができた。また炭素系被膜においても
基本的には同様な手法によって行った。
In this example, the film forming conditions were as follows: for silicon nitride film, reaction temperature: 150°C to 350°C, reaction pressure: o, oi to 0.5°C.
torr, high frequency power density 0.1 to 0.3 W/cmg, self bias voltage -150 to -250 V, and raw material gases 5iHa and Nt have a 5ins/Ng ratio of 0.05.
The hydrogen content in the film could be controlled in a similar manner in consideration of the film stress by varying the stoichiometric composition ratio by varying the range of 0.5 to 0.5. Furthermore, the same method was basically used for carbon-based coatings.

即ち反応温度150℃〜350℃1反応圧力0.01〜
0.5torr+高周波電力密度0.1〜0.3W/c
m”セルフバイアス電圧−150〜−250vである。
That is, reaction temperature 150℃~350℃ 1 reaction pressure 0.01~
0.5torr+high frequency power density 0.1~0.3W/c
m'' self-bias voltage is -150 to -250v.

第3図は本発明による複合積層被膜において下地基材と
接する層を形成する窒化珪素被膜の膜厚を可変した時の
膜応力と、さらに炭素系被膜を積層した時の全応力を示
したものであるが、窒化珪素単層においては50人から
5000人まで可変しても1×10雫dyn/cm”か
ら2.7 X10’dyn/co+”の圧縮応力の範囲
であり、膜厚依存性をそれほど示さないが炭素系被膜を
5000人積層することで下層の窒化珪素被膜の膜厚依
存性が発生し、膜厚がうすい領域では全応力は大きく、
緩和効果が発揮されないが数千人前後の膜厚領域では同
じ圧縮応力でありながら、全応力が減少する傾向を示す
ものである。
Figure 3 shows the film stress when varying the film thickness of the silicon nitride film that forms the layer in contact with the underlying base material in the composite laminated film according to the present invention, and the total stress when a carbon-based film is further laminated. However, in a single layer of silicon nitride, the compressive stress ranges from 1 x 10 drop dyn/cm" to 2.7 Although it does not show much, by stacking 5000 carbon-based films, a dependence on the thickness of the underlying silicon nitride film occurs, and the total stress is large in areas where the film thickness is thin.
Although the relaxation effect is not exerted, the total stress tends to decrease even though the compressive stress remains the same in the film thickness region of around several thousand layers.

これは窒化珪素の存在により格子不整合の改善、及び熱
応力の改善等により応力歪が緩和されるからである。
This is because stress strain is alleviated by improving lattice mismatch and thermal stress due to the presence of silicon nitride.

第4図は本発明による複合積層膜において、上部炭素系
被膜単層の膜厚を可変したときの応力を示したものであ
るが、この被膜の膜応力は膜厚とともに全応力、すなわ
ち膜厚方向に積分した応力が高く成る傾向が大きく調書
を最大限に引き出す為には、何らかの手段が必要である
ことがわかる。
Figure 4 shows the stress when the film thickness of the upper carbon-based single layer is varied in the composite laminated film according to the present invention. It can be seen that there is a strong tendency for the stress integrated in the direction to become high, and that some means is necessary to get the most out of the report.

単層でこの被膜を応用した時、所望の膜厚が薄ければ、
問題はないが、厚(なると、応力の開放の為、クラック
、ビーリング等へと波及する物性をそなえているもので
ある。
When applying this film as a single layer, if the desired film thickness is thin,
Although this is not a problem, it has physical properties that can lead to cracks, beading, etc. due to the release of stress due to its thickness.

「効果」 本発明によれば従来むずかしいとされていた炭素系被膜
の応用に際し、界面特性特に密着性の初期および経時変
化に対し、複合積層被膜という概念で構成することで多
大な改善効果を生じるものである。
``Effects'' According to the present invention, when applying carbon-based coatings, which have been considered difficult in the past, the concept of composite laminated coatings can significantly improve interfacial properties, especially changes in adhesion, both initially and over time. It is something.

すなわち被形成面上での界面C−O結合の阻止効果並び
に膜中水素含有量の制御による熱応力のコントロールつ
まり膜のトータル残留応力の低減により初めて工業的に
実用可能となったものである。
That is, it has become industrially practical for the first time due to the effect of inhibiting interfacial C--O bonds on the surface to be formed and the control of thermal stress by controlling the hydrogen content in the film, that is, the reduction of the total residual stress of the film.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の実施に使用した平行平板プラズマ装置
の概要を示す。 第2図は本発明により、作製された複合積層被膜の断面
を示す。 第3図及び第4図は被膜の膜厚と膜応力の関係を示す図
FIG. 1 shows an outline of a parallel plate plasma apparatus used to carry out the present invention. FIG. 2 shows a cross section of a composite laminated coating prepared according to the present invention. FIG. 3 and FIG. 4 are diagrams showing the relationship between the film thickness of the film and the film stress.

Claims (1)

【特許請求の範囲】 1、基板上に2以上の被膜を積層させた複合被膜におい
て、基板に接した層には積層する被膜の中で最も内部応
力の小さい被膜が設けられ、積層方向に基板から離れて
いくにしたがって順次内部応力の大きな被膜が積層され
ていることを特徴とする複合積層被膜。 2、特許請求の範囲第1項において基板に接する層に窒
化珪素被膜が形成され、該層上に炭素または炭素を主成
分とする被膜が形成されていることを特徴とする複合積
層被膜。
[Claims] 1. In a composite film in which two or more films are laminated on a substrate, the layer in contact with the substrate is provided with the film with the smallest internal stress among the laminated films, and A composite laminated coating characterized by coatings with increasing internal stress being stacked one after another as they move away from each other. 2. A composite laminated film according to claim 1, characterized in that a silicon nitride film is formed on the layer in contact with the substrate, and a carbon or carbon-based film is formed on the layer.
JP1036896A 1989-02-16 1989-02-16 Composite laminated coating Expired - Fee Related JPH07102640B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP1036896A JPH07102640B2 (en) 1989-02-16 1989-02-16 Composite laminated coating
US07/749,441 US5227196A (en) 1989-02-16 1991-09-26 Method of forming a carbon film on a substrate made of an oxide material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1036896A JPH07102640B2 (en) 1989-02-16 1989-02-16 Composite laminated coating

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP02416399A Division JP3195302B2 (en) 1999-02-01 1999-02-01 Method for producing base material having carbon-based coating
JP02412199A Division JP3195301B2 (en) 1999-02-01 1999-02-01 Substrate having carbon-based coating

Publications (2)

Publication Number Publication Date
JPH02215522A true JPH02215522A (en) 1990-08-28
JPH07102640B2 JPH07102640B2 (en) 1995-11-08

Family

ID=12482539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1036896A Expired - Fee Related JPH07102640B2 (en) 1989-02-16 1989-02-16 Composite laminated coating

Country Status (1)

Country Link
JP (1) JPH07102640B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7782569B2 (en) 2007-01-18 2010-08-24 Sae Magnetics (Hk) Ltd. Magnetic recording head and media comprising aluminum oxynitride underlayer and a diamond-like carbon overcoat
JP2011122226A (en) * 2009-12-14 2011-06-23 Tocalo Co Ltd Thick dlc film coated member and method of preparing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7782569B2 (en) 2007-01-18 2010-08-24 Sae Magnetics (Hk) Ltd. Magnetic recording head and media comprising aluminum oxynitride underlayer and a diamond-like carbon overcoat
US8009387B2 (en) 2007-01-18 2011-08-30 Sae Magnetics (Hk) Ltd. Forming an aluminum alloy oxynitride underlayer and a diamond-like carbon overcoat to protect a magnetic recording head and/or media
US8018682B2 (en) 2007-01-18 2011-09-13 Sae Magnetics (Hk) Ltd. Magnetic disk comprising an aluminum alloy oxynitride underlayer and a diamond-like carbon overcoat
JP2011122226A (en) * 2009-12-14 2011-06-23 Tocalo Co Ltd Thick dlc film coated member and method of preparing the same

Also Published As

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JPH07102640B2 (en) 1995-11-08

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