JPH02185965A - Vacuum thin film forming device - Google Patents
Vacuum thin film forming deviceInfo
- Publication number
- JPH02185965A JPH02185965A JP466689A JP466689A JPH02185965A JP H02185965 A JPH02185965 A JP H02185965A JP 466689 A JP466689 A JP 466689A JP 466689 A JP466689 A JP 466689A JP H02185965 A JPH02185965 A JP H02185965A
- Authority
- JP
- Japan
- Prior art keywords
- plate
- vacuum
- prevention plate
- thin film
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 13
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 230000008021 deposition Effects 0.000 abstract description 17
- 239000010935 stainless steel Substances 0.000 abstract description 3
- 229910001220 stainless steel Inorganic materials 0.000 abstract description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract description 2
- 238000007740 vapor deposition Methods 0.000 abstract 2
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 239000011810 insulating material Substances 0.000 abstract 1
- 230000002265 prevention Effects 0.000 description 35
- 238000000151 deposition Methods 0.000 description 16
- 239000010408 film Substances 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 238000005566 electron beam evaporation Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 240000002834 Paulownia tomentosa Species 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、真空薄膜形成装置に関し、さらに詳しくは真
空薄膜形成装置の防着板の構造に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a vacuum thin film forming apparatus, and more particularly to the structure of an adhesion prevention plate for a vacuum thin film forming apparatus.
薄膜材料は、通常、真空チャンバー内でスパッタ法、電
子ビーム蒸着法、抵抗加熱蒸着法等により成膜される。Thin film materials are usually formed in a vacuum chamber by sputtering, electron beam evaporation, resistance heating evaporation, or the like.
これらの方法では、成膜中にチャンバー内を高真空（〜
１０−６Ｔｏｒｒ）に保たなければならない。このため
、成膜に寄与しない原子あるいは分子がチャンバー内壁
に付着し、これが脱ガスとなって真空度を下げるのを防
ぐために、一般にチャンバー内壁に防着板が設置されて
いる。In these methods, the chamber is kept under high vacuum (~
10-6 Torr). Therefore, in order to prevent atoms or molecules that do not contribute to film formation from adhering to the inner wall of the chamber, causing degassing and lowering the degree of vacuum, an anti-adhesion plate is generally installed on the inner wall of the chamber.
例えば、電子ビーム蒸着装置を例に挙げて説明すると、
その概略構成は第３図に示すとおりであり、図中、１は
真空チャンバー ２は蒸着源、３はシャッタ、４は被蒸
着物を蒸着させる基板、６はバルブ、７はデイフュージ
ョンポンプ、８はロータリーポンプである。５はチャン
バー内壁近傍に設置された防着板であり、成膜に寄与し
なかった材料がチャンバー内壁に付着するのを防止する
ためのものである。For example, taking an electron beam evaporation device as an example,
Its schematic structure is as shown in FIG. 3, in which 1 is a vacuum chamber, 2 is a deposition source, 3 is a shutter, 4 is a substrate on which the material to be deposited is deposited, 6 is a valve, 7 is a diffusion pump, and 8 is a vacuum chamber. is a rotary pump. Reference numeral 5 denotes an adhesion prevention plate installed near the inner wall of the chamber to prevent material that did not contribute to film formation from adhering to the inner wall of the chamber.
前記のような従来の真空成膜装置においては、成膜終了
後に真空装置の真空を破って防着板を取り出し、防着板
を交換したり、防着板から付着物を取り除く必要があっ
た。というのは、成膜に寄与しなかった材料が付着した
防着板をそのままにしておくと、成膜操作中に上記防着
板の付着物が脱ガスとなり、真空度を下げるからである
。上記のような交換作業は極めて煩しいだけでなく、交
換の都度真空装置の真空を破るため生産性等の面でも問
題があった。In conventional vacuum film deposition equipment as described above, after film formation is complete, it is necessary to break the vacuum of the vacuum equipment, take out the deposition prevention plate, replace the deposition prevention plate, or remove deposits from the deposition prevention plate. . This is because if the adhesion prevention plate to which materials that did not contribute to film formation are adhered is left as is, the adhesion on the adhesion prevention plate becomes outgassed during the film formation operation, lowering the degree of vacuum. The above-mentioned replacement work is not only extremely troublesome, but also poses problems in terms of productivity because the vacuum in the vacuum device is broken each time the replacement is performed.
従って、本発明の目的は、上記のような従来の装置の問
題を解決し、−々防着板を取り出して交換する必要もな
く、防着板から付着物を簡単に離脱させることができる
真空薄膜形成装置を提供することにある。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to solve the problems of the conventional devices as described above, and to provide a vacuum cleaner that can easily remove deposits from the adhesion prevention plate without having to take out and replace the adhesion prevention plate. An object of the present invention is to provide a thin film forming apparatus.
本発明によれば、前記目的を達成するため、防着板を含
む真空薄膜形成装置において、上記防着板が電気伝導度
の小さい金属もしくは合金製の帯状体から成り、かつ、
該帯状体の両端が接触しないように真空チャンバー内に
設置されていると共に、上記帯状体の両端部が真空チャ
ンバーの外側に設けられた電流導入端子に接続されてい
ることを特徴とする真空薄膜形成装置が提供される。According to the present invention, in order to achieve the above object, in a vacuum thin film forming apparatus including an adhesion prevention plate, the adhesion prevention plate is made of a band-shaped body made of metal or alloy with low electrical conductivity, and
A vacuum thin film characterized in that the strip is installed in a vacuum chamber so that both ends do not touch each other, and both ends of the strip are connected to current introduction terminals provided outside the vacuum chamber. A forming device is provided.
上記のように電気伝導度の小さい金属もしくは合金製の
帯状体からなる防着板を、その両端部が接触しないよう
に真空チャンバー内に蒸着源を取り囲むように設置する
。すると、成膜操作中に成膜に寄与しない原子あるいは
分子は上記防着板に付着し、チャンバー内壁への付着が
防止される。As described above, the adhesion prevention plate made of a metal or alloy strip having low electrical conductivity is installed in a vacuum chamber so as to surround the evaporation source so that both ends thereof do not come into contact with each other. Then, atoms or molecules that do not contribute to film formation during the film forming operation adhere to the adhesion prevention plate and are prevented from adhering to the inner wall of the chamber.
成膜終了後に、真空中で上記防着板の一方の端部から他
方の端部へ向けて電流が流れるように、チャンバーの外
側に設けた電流導入端子を介して通電する。すると、電
流値や防着板の電気伝導率あるいはその形状によってそ
の値は変わるがジュール熱が発生し、防着板が加熱され
る。その結果、成膜に寄与せずに防着板に付着した材料
（原子あるいは分子）が脱ガスとなり、真空度の低下の
原因となる上記材料を防着板から離脱させることができ
、従来のように真空装置の真空を破って防着板を交換す
る必要もない。After the film formation is completed, electricity is applied through a current introduction terminal provided outside the chamber so that the current flows from one end of the deposition prevention plate to the other end in a vacuum. Then, Joule heat is generated and the deposition prevention plate is heated, although the value varies depending on the current value, the electrical conductivity of the deposition prevention plate, or its shape. As a result, the materials (atoms or molecules) attached to the deposition prevention plate without contributing to film formation become degassed, and the above materials that cause a decrease in the degree of vacuum can be removed from the deposition prevention plate. There is no need to break the vacuum of the vacuum device and replace the adhesion prevention plate.
以下、添付図面に示す実施例を説明しつつ、本発明につ
いて具体的に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below with reference to embodiments shown in the accompanying drawings.
第１図（Ａ）〜（Ｂ）は本発明の真空薄膜形成装置に用
いる各種形状の防着板を示し、同図（Ａ）は帯状体の両
端部が接触しないように円筒状に形成された防着板１０
ａを示す。同図（Ｂ）は矩形ジグザグ状の細長帯状体を
円筒状に形成した防着板１０ｂ１同図（Ｃ）は細長帯を
螺旋円筒状に形成した防着［１０ｃを示し、いずれも抵
抗を大きくするための形状であり、細長帯の間隙には帯
同志が接触しないように絶縁体をはさむように構成して
もよい。第１図に例示したものの他にも各種形状のもの
が考えられ、本発明は特定の形状に限定されるものでは
ない。各防着板１０ａ〜１０ｃの両端部にはリード線１
１が接続されており、これは真空チャンバーの外側に設
けられた電流導入端子に接続される。FIGS. 1(A) and 1(B) show adhesion prevention plates of various shapes used in the vacuum thin film forming apparatus of the present invention, and FIG. adhesion prevention plate 10
Indicates a. The same figure (B) shows an adhesion prevention plate 10b in which a rectangular zigzag-shaped elongated strip is formed into a cylindrical shape, and the same figure (C) shows an adhesion prevention plate [10c] in which an elongated strip is formed into a spiral cylindrical shape. The structure may be such that an insulator is sandwiched between the elongated strips so that the strips do not come into contact with each other. Various shapes other than those illustrated in FIG. 1 can be considered, and the present invention is not limited to any particular shape. Lead wires 1 are provided at both ends of each adhesion prevention plate 10a to 10c.
1 is connected to a current introduction terminal provided outside the vacuum chamber.
防着板の桐材としては、ステンレス鋼、ニクロム、タン
グステン、モリブデン等、電気伝導度が小さく、通電に
より発熱し得るものであればよい。The paulownia material for the deposition prevention plate may be any material that has low electrical conductivity and can generate heat when energized, such as stainless steel, nichrome, tungsten, or molybdenum.
第２図は、本発明の防着板を電子ビーム蒸着装置に設置
した例を示す。防着板１０は０．Ｉｍｍ厚、幅２０印、
長さ２００ ｃｍのステンレス鋼の帯を第１図（Ａ）に
示すような略円筒状に形成したものであり、蒸着源２及
びシャッター３を取り囲むように、チャンバー１内壁に
取り付けられた絶縁材料製の止め具１２によりチャンバ
ー内壁近傍に固定されている。防着板１０の両端部に接
合されたリード線１１は真空チャンバー１の上部に設け
られた電流導入端子１３に接続され、これに接続された
直流あるいは交流電源１４により通電できるようになっ
ている。電子ビーム蒸着後、真空中で防着板１０に通電
・加熱することにより、防着板１０の付着物が脱ガスと
なり、付着物を取り除くことができる。FIG. 2 shows an example in which the deposition prevention plate of the present invention is installed in an electron beam evaporation apparatus. The anti-adhesion plate 10 has a resistance of 0. Im thickness, width 20 marks,
A stainless steel strip with a length of 200 cm is formed into a substantially cylindrical shape as shown in FIG. It is fixed near the inner wall of the chamber by a stopper 12 made of aluminum. The lead wires 11 bonded to both ends of the adhesion prevention plate 10 are connected to a current introduction terminal 13 provided at the top of the vacuum chamber 1, and can be energized by a DC or AC power source 14 connected to this. . After the electron beam evaporation, the deposition prevention plate 10 is energized and heated in a vacuum to degas the deposits on the deposition prevention plate 10, and the deposits can be removed.
当然のことながら、本発明は上記に例示した電子ビーム
蒸着装置のみでなく、他の真空薄膜形成方法にも応用で
きることは明らかであろう。Naturally, it will be obvious that the present invention can be applied not only to the electron beam evaporation apparatus exemplified above, but also to other vacuum thin film forming methods.
以上のように、本発明の真空薄膜形成装置によれば、成
膜に寄与しなかった材料が付着した防着板を真空中で加
熱することによって脱ガスとなり、成膜操作中の真空度
の低下の原因となる付着物を防着板から簡単に離脱させ
ることができる。従って、従来のように真空装置の真空
を破って防着板を取り出すことなく防着板を清掃でき、
防着板の交換の必要もないという利点がｉ与られる。As described above, according to the vacuum thin film forming apparatus of the present invention, the adhesion prevention plate to which materials that did not contribute to film formation are attached is heated in vacuum to degas, thereby reducing the degree of vacuum during the film forming operation. Adhesive matter that causes deterioration can be easily removed from the adhesion prevention plate. Therefore, the adhesion prevention plate can be cleaned without breaking the vacuum of the vacuum device and taking out the adhesion prevention plate as in the past.
An advantage is that there is no need to replace the adhesion prevention plate.
第１図（Ａ）乃至（Ｃ）は各種形状の防着板の斜視図、
第２図は本発明に係る防着板を用いた電子ビーム蒸着装
置の概略構成図、第３図は従来の電子ビーム蒸着装置の
概略構成図である。
１は真空チャンバー ２は蒸着源、３はシャッター ４
は基板、５． １０． １０ ａ、 １０ ｂ。
１０ｃは防着板、１１はリード線、１３は電流導入端子
、FIGS. 1(A) to (C) are perspective views of adhesion prevention plates of various shapes;
FIG. 2 is a schematic diagram of an electron beam evaporation apparatus using an anti-deposition plate according to the present invention, and FIG. 3 is a schematic diagram of a conventional electron beam evaporation apparatus. 1 is a vacuum chamber, 2 is a deposition source, 3 is a shutter 4
is the substrate, 5. 10. 10a, 10b. 10c is an anti-adhesion plate, 11 is a lead wire, 13 is a current introduction terminal,
Claims (1)
電気伝導度の小さい金属もしくは合金製の帯状体から成
り、かつ、該帯状体の両端が接触しないように真空チャ
ンバー内に設置されていると共に、上記帯状体の両端部
が真空チャンバーの外側に設けられた電流導入端子に接
続されていることを特徴とする真空薄膜形成装置。In a vacuum thin film forming apparatus including an anti-adhesion plate, the anti-adhesion plate is made of a metal or alloy strip having low electrical conductivity, and is installed in a vacuum chamber so that both ends of the strip do not come into contact with each other. A vacuum thin film forming apparatus characterized in that both ends of the band-shaped body are connected to current introduction terminals provided outside the vacuum chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP466689A JPH02185965A (en) | 1989-01-13 | 1989-01-13 | Vacuum thin film forming device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP466689A JPH02185965A (en) | 1989-01-13 | 1989-01-13 | Vacuum thin film forming device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02185965A true JPH02185965A (en) | 1990-07-20 |
Family
ID=11590239
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP466689A Pending JPH02185965A (en) | 1989-01-13 | 1989-01-13 | Vacuum thin film forming device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02185965A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10310861A (en) * | 1997-03-17 | 1998-11-24 | Applied Komatsu Technol Inc | Heating and cooling vacuum chamber shield |
| DE19822877B4 (en) * | 1998-05-22 | 2010-10-07 | Applied Materials Gmbh & Co. Kg | Electrical connector for coating systems |
| RU179897U1 (en) * | 2017-10-17 | 2018-05-28 | федеральное государственное бюджетное образовательное учреждение высшего образования "Национальный исследовательский университет "МЭИ" (ФГБОУ ВО "НИУ "МЭИ") | Device for supplying energy to a technological sprayer |
-
1989
- 1989-01-13 JP JP466689A patent/JPH02185965A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10310861A (en) * | 1997-03-17 | 1998-11-24 | Applied Komatsu Technol Inc | Heating and cooling vacuum chamber shield |
| DE19822877B4 (en) * | 1998-05-22 | 2010-10-07 | Applied Materials Gmbh & Co. Kg | Electrical connector for coating systems |
| RU179897U1 (en) * | 2017-10-17 | 2018-05-28 | федеральное государственное бюджетное образовательное учреждение высшего образования "Национальный исследовательский университет "МЭИ" (ФГБОУ ВО "НИУ "МЭИ") | Device for supplying energy to a technological sprayer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0049588B1 (en) | Method and apparatus for dry etching and electrostatic chucking device used therein | |
| US5844770A (en) | Capacitor structures with dielectric coated conductive substrates | |
| EP0628986A1 (en) | Self cleaning collimator | |
| US3699034A (en) | Method for sputter depositing dielectric materials | |
| EP0061887A1 (en) | A method of producing a resistance element for a resistance thermometer | |
| JPH04279044A (en) | Sample holding device | |
| JPH02185965A (en) | Vacuum thin film forming device | |
| US20110209989A1 (en) | Physical vapor deposition with insulated clamp | |
| US2373823A (en) | Method of coating | |
| JPH06119896A (en) | Ion beam extraction device | |
| JPH0221128B2 (en) | ||
| JPS6277461A (en) | Backing plate for high frequency sputtering electrode | |
| JPS621471B2 (en) | ||
| US3481778A (en) | Method of forming a superconducting metallic film | |
| JP3079765B2 (en) | Materials for electrical contacts | |
| JPS63458A (en) | Vacuum arc vapor deposition device | |
| JPH0448073A (en) | Sputtering device | |
| JP2002004039A (en) | Sputtering equipment | |
| JPH10265946A (en) | Evaporation apparatus and thin film manufacturing method using the same | |
| JPH0666297B2 (en) | Decompression device and its insulating container | |
| JPS5833306B2 (en) | Penning discharge spatter film forming device with grid-like spatter target | |
| JPH0573288B2 (en) | ||
| JPH01107542A (en) | plasma processing equipment | |
| JPH05209265A (en) | Sputtering equipment | |
| JPS60100672A (en) | Vapor deposition device |