JPH0216561B2 - - Google Patents
Info
- Publication number
- JPH0216561B2 JPH0216561B2 JP57000873A JP87382A JPH0216561B2 JP H0216561 B2 JPH0216561 B2 JP H0216561B2 JP 57000873 A JP57000873 A JP 57000873A JP 87382 A JP87382 A JP 87382A JP H0216561 B2 JPH0216561 B2 JP H0216561B2
- Authority
- JP
- Japan
- Prior art keywords
- sio
- target
- film
- cold
- mixed powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 11
- 238000001816 cooling Methods 0.000 claims description 9
- 239000011812 mixed powder Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000010408 film Substances 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000005056 compaction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Non-Adjustable Resistors (AREA)
Description
【発明の詳細な説明】
本発明は抵抗膜用ターゲツトの製造方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a resistive film target.
フアクシミリの受信記録方式は各種あるが、将
来性を考えた場合、静電記録、感熱記録、インク
ジエツト記録等が有望視されている。中でも固定
走査の多素子感熱記録方式はプリンタ技術として
開発されたもので、現像、定着などの工程を必要
とせず、また放電破壊記録のように臭いガスが発
生しないなど新しい記録方式として注目を集めて
いる。 There are various facsimile reception and recording methods, but electrostatic recording, thermal recording, inkjet recording, etc. are considered promising when considering future prospects. Among these, the fixed scanning multi-element thermal recording method was developed as a printer technology, and has attracted attention as a new recording method because it does not require processes such as developing and fixing, and does not generate odor gas like discharge breakdown recording. ing.
ところで、この感熱記録ヘツドには薄膜型、厚
膜型、半導体型があり特に薄膜型は熱応答性もよ
く、膜の耐熱性が高い等の長所があり、この薄膜
型の感熱記録ヘツドは第１図に断面的に示すよう
に構成されている。しかして、この感熱記録ヘツ
ドはセラミツク基板１上に保温層２を介して発熱
抵抗体３を真空蒸着形成した後フオトエツチング
法により所要の形状に形成する。次いでリード線
４を設け、さらに抵抗保護膜５および耐磨耗層６
を順次設けることにより薄膜型サーマルヘツドを
製造している。 By the way, there are three types of thermal recording heads: thin-film type, thick-film type, and semiconductor type, and the thin-film type in particular has advantages such as good thermal response and high heat resistance of the film. It is constructed as shown in cross section in Figure 1. The heat-sensitive recording head is formed by vacuum evaporating a heating resistor 3 on a ceramic substrate 1 via a heat insulating layer 2, and then forming it into a desired shape by photoetching. Next, a lead wire 4 is provided, and a resistive protective film 5 and an abrasion resistant layer 6 are further provided.
A thin film type thermal head is manufactured by sequentially providing the following.
ここで発熱抵抗体３はセラミツク基板１の保温
層２上にスパツターリング法により作られる。こ
のスパツタリングに使用されるターゲツトは、
SiO2板の上に細いTaの薄板を配したものである
が、このスパツタリングによるTa板の消耗が大
きく、また形成された発熱抵抗体膜３の抵抗値分
布を悪い。この欠点を解消するためTaとSiO2の
粉末を適当な比率で混合した粉末をホツトプレス
により焼結したターゲツトが開発されている。 Here, the heating resistor 3 is formed on the heat insulating layer 2 of the ceramic substrate 1 by sputtering. The target used for this sputtering is
Although a thin Ta plate is placed on a SiO 2 plate, the Ta plate is greatly consumed by this sputtering, and the resistance value distribution of the heat generating resistor film 3 formed is also deteriorated. To overcome this drawback, a target has been developed in which Ta and SiO 2 powders are mixed in an appropriate ratio and sintered by hot pressing.
第２図にその構成を示す。 Figure 2 shows its configuration.
第２図において、３１がTa−SiO2系ターゲツ
トであり、３２は冷却用治具、３３はパツキン
グ、３４は支持台である。この焼結型ターゲツト
によれば、スパツターにより形成される発熱抵抗
体膜３の抵抗値も一定でバラツキも少ないと言う
利点がある。しかし、この焼結型ターゲツトは前
述のようにTa−SiO2系混合粉末のホツトプレス
焼結法により製造される。Ta−SiO2は1000℃以
上（非酸化性雰囲気）で相反応が生じはじめ、そ
の生成相もケイ化タンタル（Si3Ta5、TaSi2）、
酸化タンタル（α型及びβ型Ta2O5）等ホツトプ
レス焼結条件により多種、多様な物質が確認され
る。このような状態ではターゲツト本来の機能、
即ち所望の抵抗膜の形成が非常に困難となる。こ
れは出発物質のタンタルと二酸化ケイ素が反応し
てしまうことによるためで、可能な限り両者が元
の状態で存在することが最も好ましい。 In FIG. 2, 31 is a Ta-SiO 2 target, 32 is a cooling jig, 33 is a packing, and 34 is a support stand. This sintered target has the advantage that the resistance value of the heating resistor film 3 formed by sputtering is constant and has little variation. However, as described above, this sintered target is manufactured by the hot press sintering method of a Ta-SiO 2 mixed powder. Ta-SiO 2 begins to undergo a phase reaction at temperatures above 1000°C (non-oxidizing atmosphere), and the resulting phases are tantalum silicide (Si 3 Ta 5 , TaSi 2 ),
A wide variety of substances, such as tantalum oxide (α-type and β-type Ta 2 O 5 ), are confirmed depending on the hot press sintering conditions. In such a state, the target's original function,
That is, it becomes extremely difficult to form a desired resistive film. This is due to the reaction between the starting materials tantalum and silicon dioxide, and it is most preferable that both be present in their original state as much as possible.
本発明はこのような点について改良を加えたも
ので、常に所要の発熱抵抗膜３を形成しうるTa
−SiO2混合系ターゲツトを容易に製造しうる方
法を提供するものである。 The present invention has been improved with respect to these points, and the present invention has been made to improve Ta, which can always form the required heating resistive film 3.
- A method for easily producing a SiO 2 mixed target is provided.
即ち、金属タンタル（Ta）−二酸化ケイ素
（SiO2）混合粉末層と、第２図の３２に示す冷却
用治具を一体で冷間加圧成形することによりTa
−SiO2ターゲツト本来の機能を発揮させること
に特徴がある。 That is, by integrally cold-pressing a metal tantalum (Ta)-silicon dioxide (SiO 2 ) mixed powder layer and a cooling jig shown at 32 in FIG.
-The feature is that it allows the original function of the SiO 2 target to be demonstrated.
金属タンタル（Ta）は一般に非常に展延性に
富み、冷間時、Ta粉末に圧力を加えて行くと、
圧粉体の気孔率は低下し、10％以下にすることも
容易に可能である。これに二酸化ケイ素（SiO2）
粉末を配合しても、気孔率の減少度合いは若干に
ぶくなるものの冷間成形のみで十分緻密化するこ
とがわかつた。第３図に成形圧力と圧粉体の気孔
率の関係を示す。本発明はこの原理に基いて考え
られたものである。かくして得られた冷間成形体
を冷却用治具に装着する場合、従来の如く、高温
でハンダペースト（たとえばAgペースト）で接
合すると、成形体内部に浸透して、実用上好まし
くない。これを防止するために、本発明者らは、
冷間成形体を作成する際に同時に該冷却治具上に
圧接する方式を見出した。 The metal tantalum (Ta) is generally very malleable, and when pressure is applied to Ta powder when it is cold,
The porosity of the green compact is reduced and can easily be reduced to 10% or less. This includes silicon dioxide (SiO 2 )
It was found that even if powder was added, the degree of reduction in porosity was slightly greater, but sufficient densification could be achieved by cold forming alone. Figure 3 shows the relationship between compaction pressure and porosity of the green compact. The present invention was conceived based on this principle. When the cold-formed body thus obtained is attached to a cooling jig, if the solder paste (for example, Ag paste) is used at high temperature to join the body, as in the past, the solder paste will penetrate into the body, which is not practical. To prevent this, the inventors
We have discovered a method in which a cold-formed body is press-fitted onto the cooling jig at the same time as it is produced.
すなわち、Ta−SiO2混合粉と冷却用治具とを
積層させ、一体で冷間加圧成形してなるもので、
成形圧力は後のハンドリング等を考えると気孔率
30％以下になる条件が好ましい。またこの場合、
冷却用治具のTa−SiO2混合粉と接する面は適度
な凸凹を設けることにより、両者の接触面積が大
きくなり、圧着強度も増加し、さらにターゲツト
の冷却効率を増加できる利点もある。 In other words, it is made by laminating Ta-SiO 2 mixed powder and a cooling jig and cold-pressing them together.
Molding pressure is determined by porosity considering later handling etc.
Preferably, the condition is 30% or less. Also in this case,
Providing appropriate unevenness on the surface of the cooling jig that comes into contact with the Ta-SiO 2 mixed powder increases the contact area between the two, increases the compression strength, and has the advantage of increasing the cooling efficiency of the target.
このようにして製造されたターゲツトは本体が
加熱、加圧、焼結されていないため、所望のTa
とSiO2の比率を有した各々の物質が全く均一に
そのまま存在し理想的な状態が作り出される。ま
た成形体の機械的性質は幾分劣るが、冷却治具と
一体化しているため、取扱い上も容易である。ま
たもう１つの利点として、このターゲツトは焼結
処理を必要としないため、製造に要するコストも
非常に安価なことである。 Since the target body manufactured in this way is not heated, pressurized, or sintered, the desired Ta can be achieved.
An ideal state is created in which each substance having a ratio of SiO 2 and SiO 2 exists completely uniformly as it is. Furthermore, although the mechanical properties of the molded product are somewhat inferior, it is easy to handle because it is integrated with the cooling jig. Another advantage is that this target does not require a sintering process and is therefore very inexpensive to manufacture.
以下実施例に従い本発明を説明する。 The present invention will be explained below with reference to Examples.
実施例 １
一面が平滑面、他面に約１mmの凹凸を一面に有
する銅板（Cu、40mm□×約５mm厚）を冷間成形
用金型（口径40mm□）に凹凸を上に向けてSetす
る。次にTa55mol％、SiO245mol％から成る混合
粉を銅板上に40ｇ採取し充テンした。混合粉上面
を平らにならした後、金型のバツチで15ton／cm2
の圧力で冷間成形した。圧粉体の気孔率は28％
で、ターゲツトとして試用した所所望の抵抗を有
する膜が形成された。Example 1 A copper plate (Cu, 40 mm □ x approximately 5 mm thick) with one side smooth and the other side having unevenness of about 1 mm was set in a cold forming mold (diameter 40 mm □) with the unevenness facing upward. do. Next, 40 g of a mixed powder consisting of 55 mol % Ta and 45 mol % SiO 2 was collected on a copper plate and filled. After leveling the top surface of the mixed powder, 15ton/cm 2 is applied to the mold.
It was cold-formed at a pressure of The porosity of the compact is 28%
A film having the desired resistance was formed which was used as a target.
第１図は薄膜サーマルヘツドの構成例を示す断
面図、第２図は本発明の方法で用いられるスパツ
タターゲツトの構造例を示す斜視図、第３図は
Ta−SiO2系混合粉の冷間成形圧力と圧粉体気孔
率の関係を示す曲線図。
１……セラミツク基板、２……保温層、３……
発熱抵抗体、４……リード線、５……抵抗体保護
膜、６……耐磨耗層、３１……Ta−SiO2焼結体。
FIG. 1 is a sectional view showing an example of the structure of a thin film thermal head, FIG. 2 is a perspective view showing an example of the structure of a sputter target used in the method of the present invention, and FIG.
A curve diagram showing the relationship between cold compaction pressure and green compact porosity of Ta-SiO 2 mixed powder. 1... Ceramic substrate, 2... Heat insulation layer, 3...
Heat generating resistor, 4... Lead wire, 5... Resistor protection film, 6... Wear resistant layer, 31... Ta-SiO 2 sintered body.
Claims (1)
混合粉層と冷却用治具とを一体で冷間加圧成形す
ることを特徴とする抵抗膜用ターゲツトの製造方
法。1 Metal tantalum (Ta) - silicon dioxide (SiO 2 )
A method for manufacturing a resistive film target, which comprises integrally cold-pressing a mixed powder layer and a cooling jig.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57000873A JPS58119605A (en) | 1982-01-08 | 1982-01-08 | Method of producing target for resistance film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57000873A JPS58119605A (en) | 1982-01-08 | 1982-01-08 | Method of producing target for resistance film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58119605A JPS58119605A (en) | 1983-07-16 |
| JPH0216561B2 true JPH0216561B2 (en) | 1990-04-17 |
Family
ID=11485783
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57000873A Granted JPS58119605A (en) | 1982-01-08 | 1982-01-08 | Method of producing target for resistance film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58119605A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7033873B2 (en) * | 2017-09-20 | 2022-03-11 | Ｊｘ金属株式会社 | Sputtering target assembly and its manufacturing method |
-
1982
- 1982-01-08 JP JP57000873A patent/JPS58119605A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58119605A (en) | 1983-07-16 |
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