JPH02139844A - Beam scanning method using table - Google Patents
Beam scanning method using tableInfo
- Publication number
- JPH02139844A JPH02139844A JP63294232A JP29423288A JPH02139844A JP H02139844 A JPH02139844 A JP H02139844A JP 63294232 A JP63294232 A JP 63294232A JP 29423288 A JP29423288 A JP 29423288A JP H02139844 A JPH02139844 A JP H02139844A
- Authority
- JP
- Japan
- Prior art keywords
- scanning
- beam scanning
- sequence
- flicker
- screen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、走査電子顕微鏡、X線マッピング装πなどの
ように、電子ビームを走査し、得られる信号をCRTに
表示し、試料観察をするようにした電子線応用装置に関
し、特にこれらの電子線応用装置におけるビーム走査方
法Gこ関する。Detailed Description of the Invention [Field of Industrial Application] The present invention is a scanning electron microscope, an X-ray mapping device, etc., which scans an electron beam, displays the obtained signal on a CRT, and performs sample observation. The present invention relates to electron beam application devices designed to perform such operations, and particularly to a beam scanning method G in these electron beam application devices.
電子線応用装置におけるビーム走査はX軸方向、Y軸方
向共にのこぎり波発生器を用いて行われていた。このた
め、ビーム走査は通常のTV走査と同様であった。Beam scanning in electron beam application equipment has been performed using sawtooth wave generators in both the X-axis direction and the Y-axis direction. Therefore, beam scanning was similar to normal TV scanning.
試料観察は、電子ビームを照射する事により行われるた
め、導電率が低い場所では、電子ビームがチャージアッ
プを起こし、2次電子量が異常に増大し画像がちらつい
たり、ひどい場合にはビーム軌道が曲がってしまうため
、像が歪むなどの現象が起こり、像観察が阻害されると
いう問題があった。Sample observation is performed by irradiating an electron beam, so in places with low conductivity, the electron beam will charge up, causing an abnormal increase in the amount of secondary electrons, causing the image to flicker, or in severe cases, changing the beam trajectory. Since the lens is bent, phenomena such as image distortion occur, which hinders image observation.
また、ビーム走査系と2次信号検出系を全てデジタル化
した装置において画素当たりの時間を長<LS/N比を
良くしようとすると、走査速度が遅くなり、前画面と新
画面との境界線がちらつきとして眼に見え、像が見にく
くなるという問題もあった。In addition, in a device where the beam scanning system and secondary signal detection system are all digitalized, if you try to increase the time per pixel and improve the LS/N ratio, the scanning speed will slow down and the boundary between the previous screen and the new screen will be There was also the problem that the image was visible as flickering, making it difficult to see the image.
上記問題を解決するために、本発明が採用する手段は、
ビームのXY走査順番を記憶したメモリテーブルと、前
記メモリテーブルから数値を読み出し、DA変換器へ送
る機構と、前記DA変)部器によりビーム走査を行なう
ようにした方法のものである。In order to solve the above problem, the means adopted by the present invention are:
This method includes a memory table storing the XY scanning order of the beam, a mechanism for reading numerical values from the memory table and sending them to a DA converter, and a beam scanning method using the DA converter.
電子ビームによるチャージアンプは、ビーム照射点から
電導により運び去られる電流以上に電子が供給されるた
めに起きる。これを防ぐためには電流供給を集中させな
ければ良い。本発明における走査方法では、任意の順番
でビームを走査できるので、ビーム照射点が走査範囲内
で次々と削れた点となるように設定できる。このため電
流供給が集中せず、走査範囲全体にj1シらす事ができ
、チャージアンプ防止に役立つものである。Charge amplification by the electron beam occurs because electrons are supplied in excess of the current carried away by conduction from the beam irradiation point. To prevent this, the current supply should not be concentrated. In the scanning method of the present invention, since the beam can be scanned in any order, the beam irradiation points can be set to be successively scraped points within the scanning range. Therefore, the current supply is not concentrated and can be spread over the entire scanning range, which is useful for preventing charge amplification.
また、このような走査方法を用いると前両面と新画面と
の境界線が存在しないため、ちらつきが軽バされる。Furthermore, when such a scanning method is used, there is no boundary line between the front surface and the new screen, so flickering is reduced.
〔実施例〕 以下、図面に従って本発明の詳細な説明する。〔Example〕 Hereinafter, the present invention will be described in detail with reference to the drawings.
第1図において、1はy方向走査テーブルであり、この
数値によりどのラインが走査されるかが決まる。2は走
査順番を示している。3は走査面である。この実施例に
おいては、X方向は単調増加であり、テーブルはy方向
走査のみである。In FIG. 1, 1 is a y-direction scanning table, and this value determines which line is scanned. 2 indicates the scanning order. 3 is a scanning plane. In this example, the X direction is monotonically increasing and the table only scans in the Y direction.
第2I21は、第1図3の走査面での逐次変化を示すも
のである。4は実際のビーム走査を表わしていて、ta
l−(bl −(cl →[dl −(el −+ (
r)→(gl →fhl →(it→(Jlの順に走査
され、(J)の次は再びfatに戻るようになっている
。4のビーム走査後は、ビームによる電荷注入が起き、
5の電荷蓄積が残る。この電荷蓄積5は、時間と共に消
失してい(。この時、新しいビーム走査4が鋪れたライ
ンを通るため、電流供給が集中しないのである。また、
前画面と新画面が入り混じって更新されるため、ちらつ
きも防止できる。2I21 shows successive changes in the scanning plane in FIG. 1. 4 represents the actual beam scanning, and ta
l−(bl −(cl →[dl −(el −+ (
It is scanned in the order of r) → (gl → fhl → (it → (Jl), and returns to fat again after (J). After the beam scan of 4, charge injection by the beam occurs,
A charge accumulation of 5 remains. This charge accumulation 5 disappears over time (at this time, the new beam scan 4 passes through the cleared line, so the current supply is not concentrated. Also,
Since the previous screen and new screen are updated in a mixed manner, flickering can be prevented.
(発明のりJ果〕
以上説明してきたように、本発明を使用すればチャージ
アップを防止できるので、等電率の低い試料の観察が容
易に行える。また、走査画面のちらつきが防止されるた
め、画素当たりの測定時間を長くした像観察が、快適に
行えるものである。(Advantages of the Invention) As explained above, by using the present invention, charge-up can be prevented, making it easier to observe samples with low isoelectric constants.Furthermore, flickering on the scanning screen can be prevented. , image observation can be performed comfortably with a longer measurement time per pixel.
第1図a、bは本発明の詳細な説明する図、第2図i8
i〜(」)は本発明の実施例に基づく走査面の逐次変化
を示す図面である。
■・・・y方向走査テーブル
2・・・走査順番
3・・・走査面
4・・・ビーム走査
5・・・電荷蓄積
第1図
(a)
(b)
(c)
(d)
以上
出願人 セイコー電子工業株式会社
代理人 弁理士 林 敬 之 助
(f)
(h)
(i)
第 2 図Figures 1a and b are diagrams explaining the invention in detail, Figure 2 i8
i~('') are drawings showing sequential changes in a scanning plane based on an embodiment of the present invention. ■...Y-direction scanning table 2...Scanning order 3...Scanning surface 4...Beam scanning 5...Charge accumulation Figure 1 (a) (b) (c) (d) Applicant Seiko Electronic Industries Co., Ltd. Representative Patent Attorney Keinosuke Hayashi (f) (h) (i) Figure 2
Claims (2)
を備え、 前記メモリテーブルから読み出した数値を、前記DA変
換器に送りビーム走査を行うことを特徴とする、テーブ
ルを用いたビーム走査方法。(1) A beam scanning method using a table, comprising a memory table storing the XY scanning order of the beam, and sending numerical values read from the memory table to the DA converter to perform beam scanning.
向は単調であることを特徴とする、請求項(1)記載の
テーブルを用いたビーム走査方法。(2) The beam scanning method using a table according to claim (1), wherein the memory table is limited to only the Y direction and is monotonous in the X direction.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63294232A JPH02139844A (en) | 1988-11-21 | 1988-11-21 | Beam scanning method using table |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63294232A JPH02139844A (en) | 1988-11-21 | 1988-11-21 | Beam scanning method using table |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02139844A true JPH02139844A (en) | 1990-05-29 |
Family
ID=17805053
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63294232A Pending JPH02139844A (en) | 1988-11-21 | 1988-11-21 | Beam scanning method using table |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02139844A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05151921A (en) * | 1991-11-29 | 1993-06-18 | Toshiba Corp | Electron beam irradiation device and electric signal detector |
US6930317B2 (en) | 2002-12-25 | 2005-08-16 | Kabushiki Kaisha Toshiba | Charged particle beam apparatus, charged particle beam irradiation method, and method of manufacturing semiconductor device |
JP2006505093A (en) * | 2002-02-04 | 2006-02-09 | アプライド マテリアルズ イスラエル リミテッド | System and method for charged particle sensitive resists |
JP2007059370A (en) * | 2005-07-29 | 2007-03-08 | Hitachi High-Technologies Corp | Image forming method and charged particle beam apparatus |
JP2008123716A (en) * | 2006-11-08 | 2008-05-29 | Hitachi High-Technologies Corp | Scanning electron microscope with time constant measurement function |
JP2009070686A (en) * | 2007-09-13 | 2009-04-02 | Hitachi High-Technologies Corp | Inspection device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6166352A (en) * | 1984-09-07 | 1986-04-05 | Hitachi Ltd | scanning electron microscope |
JPS62128422A (en) * | 1985-11-29 | 1987-06-10 | Fujitsu Ltd | electron beam device |
-
1988
- 1988-11-21 JP JP63294232A patent/JPH02139844A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6166352A (en) * | 1984-09-07 | 1986-04-05 | Hitachi Ltd | scanning electron microscope |
JPS62128422A (en) * | 1985-11-29 | 1987-06-10 | Fujitsu Ltd | electron beam device |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05151921A (en) * | 1991-11-29 | 1993-06-18 | Toshiba Corp | Electron beam irradiation device and electric signal detector |
JP2006505093A (en) * | 2002-02-04 | 2006-02-09 | アプライド マテリアルズ イスラエル リミテッド | System and method for charged particle sensitive resists |
US6930317B2 (en) | 2002-12-25 | 2005-08-16 | Kabushiki Kaisha Toshiba | Charged particle beam apparatus, charged particle beam irradiation method, and method of manufacturing semiconductor device |
JP2007059370A (en) * | 2005-07-29 | 2007-03-08 | Hitachi High-Technologies Corp | Image forming method and charged particle beam apparatus |
US8203504B2 (en) | 2005-07-29 | 2012-06-19 | Hitachi High-Technologies Corporation | Image forming method and charged particle beam apparatus |
JP2008123716A (en) * | 2006-11-08 | 2008-05-29 | Hitachi High-Technologies Corp | Scanning electron microscope with time constant measurement function |
JP2009070686A (en) * | 2007-09-13 | 2009-04-02 | Hitachi High-Technologies Corp | Inspection device |
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