JPH0213297B2 - - Google Patents
Info
- Publication number
- JPH0213297B2 JPH0213297B2 JP57222095A JP22209582A JPH0213297B2 JP H0213297 B2 JPH0213297 B2 JP H0213297B2 JP 57222095 A JP57222095 A JP 57222095A JP 22209582 A JP22209582 A JP 22209582A JP H0213297 B2 JPH0213297 B2 JP H0213297B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- atoms
- gas
- photoconductive
- amorphous layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08221—Silicon-based comprising one or two silicon based layers
- G03G5/08228—Silicon-based comprising one or two silicon based layers at least one with varying composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57222095A JPS59113447A (ja) | 1982-12-20 | 1982-12-20 | 電子写真用光導電部材 |
US06/561,991 US4555465A (en) | 1982-12-20 | 1983-12-16 | Photoconductive member of amorphous silicon |
DE19833346043 DE3346043A1 (de) | 1982-12-20 | 1983-12-20 | Fotoleitfaehiges aufzeichnungselement |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57222095A JPS59113447A (ja) | 1982-12-20 | 1982-12-20 | 電子写真用光導電部材 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59113447A JPS59113447A (ja) | 1984-06-30 |
JPH0213297B2 true JPH0213297B2 (de) | 1990-04-03 |
Family
ID=16777050
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57222095A Granted JPS59113447A (ja) | 1982-12-20 | 1982-12-20 | 電子写真用光導電部材 |
Country Status (3)
Country | Link |
---|---|
US (1) | US4555465A (de) |
JP (1) | JPS59113447A (de) |
DE (1) | DE3346043A1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62170968A (ja) * | 1986-01-23 | 1987-07-28 | Hitachi Ltd | アモルフアスシリコン電子写真感光体およびその製造方法 |
JPH07122757B2 (ja) * | 1986-10-14 | 1995-12-25 | ミノルタ株式会社 | 感光体とその製造方法 |
JPH07122756B2 (ja) * | 1986-10-14 | 1995-12-25 | ミノルタ株式会社 | 感光体とその製造方法 |
JPH0727268B2 (ja) * | 1986-10-14 | 1995-03-29 | ミノルタ株式会社 | 感光体とその製造方法 |
EP0605972B1 (de) * | 1992-12-14 | 1999-10-27 | Canon Kabushiki Kaisha | Lichtempfindliches Element mit einer mehrschichtigen Schicht mit erhöhter Wasserstoff oder/und Halogenatom Konzentration im Grenzflächenbereich benachbarter Schichten |
JP4171428B2 (ja) * | 2003-03-20 | 2008-10-22 | 三洋電機株式会社 | 光起電力装置 |
JP5777419B2 (ja) * | 2010-06-28 | 2015-09-09 | キヤノン株式会社 | 電子写真感光体および電子写真装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2095030B (en) * | 1981-01-08 | 1985-06-12 | Canon Kk | Photoconductive member |
US4409311A (en) * | 1981-03-25 | 1983-10-11 | Minolta Camera Kabushiki Kaisha | Photosensitive member |
US4423133A (en) * | 1981-11-17 | 1983-12-27 | Canon Kabushiki Kaisha | Photoconductive member of amorphous silicon |
-
1982
- 1982-12-20 JP JP57222095A patent/JPS59113447A/ja active Granted
-
1983
- 1983-12-16 US US06/561,991 patent/US4555465A/en not_active Expired - Lifetime
- 1983-12-20 DE DE19833346043 patent/DE3346043A1/de active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS59113447A (ja) | 1984-06-30 |
US4555465A (en) | 1985-11-26 |
DE3346043A1 (de) | 1984-06-20 |
DE3346043C2 (de) | 1987-07-23 |