JPH02122615A - Spin coater - Google Patents
Spin coaterInfo
- Publication number
- JPH02122615A JPH02122615A JP27783288A JP27783288A JPH02122615A JP H02122615 A JPH02122615 A JP H02122615A JP 27783288 A JP27783288 A JP 27783288A JP 27783288 A JP27783288 A JP 27783288A JP H02122615 A JPH02122615 A JP H02122615A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- mounting table
- film
- liquid nitrogen
- cracks
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011248 coating agent Substances 0.000 claims abstract description 21
- 238000000576 coating method Methods 0.000 claims abstract description 21
- 239000007788 liquid Substances 0.000 claims abstract description 14
- 238000001816 cooling Methods 0.000 claims abstract description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 14
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 7
- 235000019441 ethanol Nutrition 0.000 abstract description 6
- 150000003377 silicon compounds Chemical class 0.000 abstract description 5
- 239000002904 solvent Substances 0.000 abstract description 4
- 239000003960 organic solvent Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 101150038956 cup-4 gene Proteins 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Coating Apparatus (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体集積回路の製造に用いられる回転塗布装
置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a spin coating apparatus used for manufacturing semiconductor integrated circuits.
従来、半導体集積回路の製造に用いられる回転塗布装置
は第2図に示す通り、回転軸1に直結されたウェハー載
置台2にウェハー6を載せて真空等により固定し、ウェ
ハー6を回転させ、滴下ノズル3よりホトレジスト溶液
やケイ素化合物を有機溶剤(アルコール等)に溶解した
塗布溶液を滴下し、ウェハー6上に薄膜を形成できるよ
うに構成されていた。又ウェハー6の回転時に塗布液の
鷹び散りが塗布後のウェハー上に付着するのを防ぐ為、
塗布液受は用のカップ4の上方に吸入ダクト5を取り付
け、ミスト状となった塗布液を吸入し除去していた。Conventionally, as shown in FIG. 2, a spin coating apparatus used for manufacturing semiconductor integrated circuits places a wafer 6 on a wafer mounting table 2 directly connected to a rotating shaft 1, fixes it by vacuum or the like, rotates the wafer 6, and rotates the wafer 6. It was configured such that a photoresist solution or a coating solution in which a silicon compound was dissolved in an organic solvent (alcohol, etc.) was dropped from a dropping nozzle 3 to form a thin film on a wafer 6. In addition, in order to prevent the coating liquid from scattering and adhering to the wafer after coating when the wafer 6 is rotated,
A suction duct 5 was attached above the cup 4 for the application liquid receiver, and the application liquid in the form of mist was sucked in and removed.
しかしながら、上述した従来の回転塗布装置では、吸入
ダクト5により°塗布溶液のミストを吸入している為、
ウェハー6上に塗布された液から溶剤が急激に気化する
ため、塗布膜の厚さにばらつきを生じると共に、塗布膜
にクラック等が発生するという欠点があった。However, in the conventional spin coating device described above, the mist of the coating solution is sucked in through the suction duct 5.
Since the solvent is rapidly vaporized from the liquid applied onto the wafer 6, there are disadvantages in that the thickness of the coating film varies and cracks and the like occur in the coating film.
本発明の回転塗布装置は、回転軸に接続されたウェハー
載置台と、該ウェハー載置台の周囲に設けられた塗布液
受は用のカップと、前記ウェハー載置台の上部に設けら
れたノズルとを有する回転塗布装置において、前記ウェ
ハー載置台の周囲にウェハー冷却手段を設けたものであ
る。The rotary coating device of the present invention includes a wafer mounting table connected to a rotating shaft, a cup for receiving a coating liquid provided around the wafer mounting table, and a nozzle provided on the upper part of the wafer mounting table. In the spin coating apparatus, a wafer cooling means is provided around the wafer mounting table.
次に、本発明の実施例について図面を参照して説明する
。Next, embodiments of the present invention will be described with reference to the drawings.
第1図は本発明の一実施例の断面図である。FIG. 1 is a sectional view of an embodiment of the present invention.
第1図において回転塗布装置は、回転軸1に接続された
ウェハー載置台2と、このウェハー載置台2の周囲に設
けられた塗布液受は用のカップ4と、ウェハー載置台2
の上部に設けられた滴下ノズル3と、ウェハー載置台2
上に置かれたウェハー6を冷却するための液体窒素導入
ロアとから主に構成されている。In FIG. 1, the rotary coating apparatus includes a wafer mounting table 2 connected to a rotating shaft 1, a cup 4 for receiving a coating liquid provided around the wafer mounting table 2, and a wafer mounting table 2.
A drip nozzle 3 provided on the top of the wafer mounting table 2
It mainly consists of a liquid nitrogen introduction lower for cooling the wafer 6 placed above.
このように構成された本実施例によれば、ウェハー載置
台2近傍に設けた複数の液体窒素導入ロアより液体窒素
を気化させながら50〜500禰/miRの流量で送り
込み、ウェハー6や、ウェハー載置台2を冷却し、−5
〜10℃に冷却することができる。According to the present embodiment configured in this way, liquid nitrogen is vaporized and fed at a flow rate of 50 to 500 N/miR from the plurality of liquid nitrogen introducing lowers provided near the wafer mounting table 2, and the wafer 6 and the wafer Cool the mounting table 2 to -5
It can be cooled to ~10°C.
滴下ノズル3よりウェハー6表面に滴下される塗布溶液
中の有機溶媒、例えばエチルアルコールは第3図に示す
ように、その気化速度は温度が上昇すると共に大きくな
る傾向がある。従って本実施例のようにウェハー6を冷
却することにより、アルコール等の溶剤にケイ素化合物
を溶かした塗布溶液は、その気化速度が著しく小さくな
るため、ケイ素化合物の膜をウェハー6の表面にゆっく
りと形成することができる。このため、塗布膜は均一な
厚さとなり、従来のようにクラックが発生することはな
くなる。As shown in FIG. 3, the rate of vaporization of organic solvents, such as ethyl alcohol, in the coating solution dripped onto the surface of the wafer 6 from the dripping nozzle 3 tends to increase as the temperature rises. Therefore, by cooling the wafer 6 as in this embodiment, the vaporization rate of the coating solution containing a silicon compound dissolved in a solvent such as alcohol becomes extremely low, so that the film of the silicon compound is slowly deposited on the surface of the wafer 6. can be formed. Therefore, the coating film has a uniform thickness, and cracks do not occur as in the conventional case.
尚、液体窒素の替りに冷却したヘリウム等を用いても同
様の効果が得られる。Note that the same effect can be obtained by using cooled helium or the like instead of liquid nitrogen.
以上説明したように本発明は、回転塗布装置のウェハー
載置台の周囲にウェハー冷却手段を設けることにより、
塗布溶液中の溶剤成分の気化速度を小さくできるため、
ウェハー上に形成される塗布膜の厚さを均一にでき、か
つ塗布膜にクラック等が発生するのを防止できる効果が
ある。As explained above, the present invention provides a wafer cooling means around the wafer mounting table of the spin coating apparatus,
The evaporation rate of the solvent components in the coating solution can be reduced.
This has the effect of making the thickness of the coating film formed on the wafer uniform and preventing cracks from occurring in the coating film.
第1図は本発明の一実施例の断面図、第2図は従来例の
断面図、第3図はエチルアルコールの蒸気圧を示す図で
ある。
1・・・回転軸、2・・・ウェハー載置台、3・・・滴
下ノズル、4・・・カップ、5・・・吸入ダクト、6・
・・ウェハー、7・・・液体窒素導入口。FIG. 1 is a sectional view of an embodiment of the present invention, FIG. 2 is a sectional view of a conventional example, and FIG. 3 is a diagram showing the vapor pressure of ethyl alcohol. DESCRIPTION OF SYMBOLS 1... Rotating shaft, 2... Wafer mounting table, 3... Dripping nozzle, 4... Cup, 5... Suction duct, 6...
...Wafer, 7...Liquid nitrogen inlet.
Claims (1)
置台の周囲に設けられた塗布液受け用のカップと、前記
ウェハー載置台の上部に設けられたノズルとを有する回
転塗布装置において、前記ウェハー載置台の周囲にウェ
ハー冷却手段を設けたことを特徴とする回転塗布装置。A rotary coating apparatus having a wafer mounting table connected to a rotating shaft, a cup for receiving a coating liquid provided around the wafer mounting table, and a nozzle provided at an upper part of the wafer mounting table. A rotary coating device characterized in that a wafer cooling means is provided around a mounting table.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27783288A JPH02122615A (en) | 1988-11-01 | 1988-11-01 | Spin coater |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27783288A JPH02122615A (en) | 1988-11-01 | 1988-11-01 | Spin coater |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02122615A true JPH02122615A (en) | 1990-05-10 |
Family
ID=17588889
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP27783288A Pending JPH02122615A (en) | 1988-11-01 | 1988-11-01 | Spin coater |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02122615A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008053355A (en) * | 2006-08-23 | 2008-03-06 | Tokyo Electron Ltd | Method and device for treating application, program, and computer readable recording medium |
-
1988
- 1988-11-01 JP JP27783288A patent/JPH02122615A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008053355A (en) * | 2006-08-23 | 2008-03-06 | Tokyo Electron Ltd | Method and device for treating application, program, and computer readable recording medium |
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