JPH02119124A - plasma processing equipment - Google Patents
plasma processing equipmentInfo
- Publication number
- JPH02119124A JPH02119124A JP27234588A JP27234588A JPH02119124A JP H02119124 A JPH02119124 A JP H02119124A JP 27234588 A JP27234588 A JP 27234588A JP 27234588 A JP27234588 A JP 27234588A JP H02119124 A JPH02119124 A JP H02119124A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- plasma processing
- potential
- processing equipment
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009272 plasma gasification Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明はプラズマ処理装置の構成に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to the configuration of a plasma processing apparatus.
［従来の技術］
従来、プラズマ処理装置には発生プラズマに電位を付与
する電極はとりたてて具備されている事はなかった。[Prior Art] Conventionally, a plasma processing apparatus has not been particularly equipped with an electrode for applying a potential to generated plasma.
［課題を解決するだめの手段］
上記課題を解決するために、本発明は、プラズマ処理装
置に関し、高周波によるプラズマ・、ガスの生成部と、
該プラズマに電位を付与する電極とを具備する手段をと
る。[Means for Solving the Problems] In order to solve the above problems, the present invention relates to a plasma processing apparatus, and includes a plasma and gas generation section using high frequency waves,
A means for providing an electrode for applying a potential to the plasma is taken.
［実施例コ 以下、実施例により本発明を詳述する。[Example code] Hereinafter, the present invention will be explained in detail with reference to Examples.
第１図は本発明の一実施例を示すプラズマ処理装置の概
念図である。FIG. 1 is a conceptual diagram of a plasma processing apparatus showing an embodiment of the present invention.
いま、石英等から成る反応管１の一部に、高周波電極５
と該高周波電極５に高周波を付与する高周波電源６を備
えてプラズマ発生部となし、ガス人口２や固体ソース等
のプラズマ・ガス化を誘起する部分となし、該プラズマ
・ガスに電位を付与するための直流電源９と接続された
電位付与電極７を少くともプラズマ・ガスに晒される部
分に設置して、プラズマ・ガスに電位を正又は負極性で
ある一定電圧で付与し、該電位を付与されたプラズマ・
ガスに支持台４の上に設置した８１等の試料５０表面に
晒す事により、試料５の例えば一定電位のＡｒプラズマ
による表面エツチングやＳ１プラズマによるＳ１エピタ
キシヤルを低温にて行なう事ができる。Now, a high frequency electrode 5 is attached to a part of the reaction tube 1 made of quartz or the like.
The high-frequency electrode 5 is provided with a high-frequency power source 6 that applies high-frequency waves to serve as a plasma generation part, and serves as a part that induces plasma gasification such as a gas population 2 or a solid source, and applies a potential to the plasma gas. A potential imparting electrode 7 connected to a DC power supply 9 for the purpose of the present invention is installed at least in a portion exposed to the plasma gas, and a potential is imparted to the plasma gas at a constant voltage of positive or negative polarity, thereby imparting the potential. Plasma
By exposing the surface of the sample 50 such as 81 placed on the support table 4 to the gas, surface etching of the sample 5 using Ar plasma at a constant potential or S1 epitaxial process using S1 plasma can be performed at a low temperature.
第１図は本発明の一実施例を示すプラズマ処理装置の要
部の概念図である。
１・・・・・・・・・反応管
２・・・・・・・・・ガス入口
３・・・・・・・・・高周波電極
４・・・・・・・・・支持台
５・・・・・・・・・試 料
６・・・・・・・・高周波電源
７・・・・・・・・・電位付与電極
８・・・・・・・・・ガス出口
９・・・・・・・・・直流電源
以
上
［発明の効果］
本発明の如（、一定電位のプラズマ処理が可能な装置を
提供する事により、下地との密着性の良好な漢形成や結
晶欠陥のないエピタキシャル膜形成が可能となる効果が
ある。FIG. 1 is a conceptual diagram of the main parts of a plasma processing apparatus showing an embodiment of the present invention. 1... Reaction tube 2... Gas inlet 3... High frequency electrode 4... Support stand 5. ......Sample 6...High frequency power source 7...Potential applying electrode 8...Gas outlet 9... ...More than a DC power source [Effects of the invention] By providing an apparatus capable of plasma processing at a constant potential as described in the present invention, it is possible to achieve a process with good adhesion to the substrate and no crystal defects. This has the effect of making it possible to form an epitaxial film.
Claims (1)
電位を付与する電極とを具備する事を特徴とするプラズ
マ処理装置。A plasma processing apparatus characterized by comprising a plasma gas generation section using high frequency waves and an electrode that applies a potential to the plasma.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27234588A JPH02119124A (en) | 1988-10-28 | 1988-10-28 | plasma processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27234588A JPH02119124A (en) | 1988-10-28 | 1988-10-28 | plasma processing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02119124A true JPH02119124A (en) | 1990-05-07 |
Family
ID=17512589
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27234588A Pending JPH02119124A (en) | 1988-10-28 | 1988-10-28 | plasma processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02119124A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03236255A (en) * | 1990-02-14 | 1991-10-22 | Hitachi Ltd | Method for removing charge from electrostatic chuck |
| WO1998005803A1 (en) * | 1996-08-05 | 1998-02-12 | Komatsu Ltd. | Surface treatment apparatus, surface treatment method using the apparatus, and surface treatment nozzle used for the apparatus and method |
| CN100378924C (en) * | 1996-07-03 | 2008-04-02 | 泰格尔公司 | Plasma Erosion Reactor |
-
1988
- 1988-10-28 JP JP27234588A patent/JPH02119124A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03236255A (en) * | 1990-02-14 | 1991-10-22 | Hitachi Ltd | Method for removing charge from electrostatic chuck |
| CN100378924C (en) * | 1996-07-03 | 2008-04-02 | 泰格尔公司 | Plasma Erosion Reactor |
| WO1998005803A1 (en) * | 1996-08-05 | 1998-02-12 | Komatsu Ltd. | Surface treatment apparatus, surface treatment method using the apparatus, and surface treatment nozzle used for the apparatus and method |
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