JPH02114639A - Manufacturing method of semiconductor device - Google Patents

Abstract

(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed description of the invention] [Industrial application field] The present invention relates to an electrode wiring structure in a semiconductor.

[Conventional technology 1] Conventionally, electrode wiring in a semiconductor device is formed by photo-etching an Al1 film formed by a vapor deposition method such as a sputtering method on the surface of an insulating film formed on the surface of a semiconductor substrate. It was customary to form a protective film such as a CVD5 iO2 film thereon.

[Problem to be Solved by the Invention 1] However, according to the above-mentioned prior art, the AI2 electrode wiring migrates due to the stress received from the protective film, etc., and disconnection occurs due to so-called stress migration, and disconnection due to electromigration also occurs. There was a problem in that it was more likely to occur.

An object of the present invention is to provide a new structure of electrode wiring in a semiconductor device in order to solve the problems of the prior art.

[Means for Solving the Problems 1] In order to solve the above problems, the present invention relates to a semiconductor device, and provides the following features: (1) A trench is formed in an insulating film formed on the surface of a semiconductor substrate, and an electrode is placed in the trench. (2) The material of the electrode is T i W, T i pJ,
TiS i, WS i, MoS i or Ti film and Cu
Or, taking measures to form a multilayer structure with Aβ film, and (3)
) At least the film in contact with the side wall of the electrode of the insulating film is an organic film.

[Embodiment] FIG. 1 is a sectional view of an electrode wiring structure of a semiconductor device showing an embodiment of the present invention. That is, an S l 02 film 2 is formed on the surface of the Si substrate 1, and a Cu film is formed on the surface of the SiO □ film 2 on which a trench 3 is formed by photo-etching, using a sputtering method, and an etch-back method. The Cu film in areas other than trench 3 is removed by
A Cu wiring 4 is formed inside the portion. Furthermore, Cu wiring 4
may be AI2, and 5iO-tl! 2 may be an organic film such as a polyimide film (Stow film and Si
It is also possible to adopt a structure in which a trench 3 is formed in SiSi3N4 in a two-layer structure of sN4II.

FIG. 2 is a sectional view of a main part of a semiconductor device showing another embodiment of the present invention. That is, on the surface of the Si substrate 11, there are 5
After the iOa film 12 is formed, TiWli 13 is formed by sputtering, CVD, etc., and then photolithography is performed in a pattern.
After that, a photoresist I114 is formed, and the trench 1 is etched by an exposure process of the resist film 14.
5 is formed on the TiWli 13, and a Cu film is buried in the trench 15 by a plating method, a sputtered film etch-back method, or the like to form a Cu1i: line 16.

Note that TiWli13 is TiN, TiSi, WSi, MoS
The Cu wiring 16 may be made of Aβ, and the photoresist film 14 may be made of a SiO□ film or a Si film.
It may also be a 3N+ film or another organic film such as a polyimide film formed by photolithography or photo-etching.

FIG. 3 is a sectional view of a main part of a semiconductor device showing another embodiment of the present invention. That is, a SiO□ film is formed on the surface of the Si substrate 21, a trench 23 is formed in the SiO□ film 22 by photo-etching, a Ti film and a Cu1ll are formed by a spuck method, and then etched.
A TiW film 24 and a Cu film are formed in the trench 13 by the back method.
0c! It! 25 electrode wirings are formed.

[Effects of the Invention] According to the present invention, the stress caused by the insulating film on at least the side surface of the electrode wiring of a semiconductor device can be alleviated.

This has the effect of preventing wire breakage due to stress migration and, by extension, preventing wire breakage due to electromigration.

l, 2. 3. 4゜ l　3. 14・ l　1　　、2　l　・ l　2,22　・ l　5　　l　3　・ l　6,25　・ 24 ・ ・ ・ ・ Si substrate 5iOi film trench Cu wiring Ti film photoresist film that's all Applicant: Seiko Epson Corporation Agent: Patent attorney Homare Kamiyanagi (1 other person)

[Brief explanation of drawings]

FIG. 1, FIG. 2, and FIG. 3 are cross-sectional views showing the wiring structure in the semiconductor device of the present invention.

Claims (3)

[Claims] (1) A semiconductor device characterized in that a trench is formed in an insulating film formed on the surface of a semiconductor substrate, and an electrode is embedded and wired in the trench. (2) The electrode material is TiW, TiN, TiSi, WSi,
2. The semiconductor device according to claim 1, wherein the semiconductor device has a multilayer structure of a MoSi or Ti film and a Cu or Al film. (3) The semiconductor device according to claim 1, wherein at least the film in contact with the electrode side wall of the insulating film is an organic film.