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JPH02111223A - Current limiter circuit - Google Patents

Current limiter circuit

Info

Publication number
JPH02111223A
JPH02111223A JP7592088A JP7592088A JPH02111223A JP H02111223 A JPH02111223 A JP H02111223A JP 7592088 A JP7592088 A JP 7592088A JP 7592088 A JP7592088 A JP 7592088A JP H02111223 A JPH02111223 A JP H02111223A
Authority
JP
Japan
Prior art keywords
fet
source
circuit
voltage
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7592088A
Other languages
Japanese (ja)
Inventor
Tadao Mizumura
水村 忠男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP7592088A priority Critical patent/JPH02111223A/en
Publication of JPH02111223A publication Critical patent/JPH02111223A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To simplify a circuit by limiting a rush current by an input resistor, an input capacitor when a field effect transistor FET is OFF, and operating a FET based on a voltage between the source and the drain of the FET in a suppressing direction at the time of overcurrent, and limiting the overcurrent. CONSTITUTION:A rush current is limited by an input resistor 2 and an input capacitor 3 when a FET 1 is OFF, and the FET 1 is then turned ON to obtain a predetermined current. On the other hand, a voltage between the source and drain terminals (a) and (b) of the FET 1 is raised at the time of overload, the voltage is detected through circuit terminals a', b', and their outputs are supplied to the base of a gate voltage control transistor 8. As a result, the transistor 8 which remains OFF so far is turned ON, the voltage between the gate and the source of the FET 1 is varied, and a current between the source and the drain of the FET 1 is limited. Accordingly, a current to an output side terminal OUT is limited to prevent the overcurrent. Thus, the circuit can be simplified.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は電源回路における入力電流の制限回路に関し、
特に入力開閉器投入時の突入電流と、過負荷時の過電流
の双方を制限した電流制限回路に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an input current limiting circuit in a power supply circuit.
In particular, the present invention relates to a current limiting circuit that limits both inrush current when the input switch is closed and overcurrent during overload.

〔従来の技術〕[Conventional technology]

−Cに電気機器の電源回路には入力開閉器投入。 At -C, turn on the input switch to the power circuit of the electrical equipment.

時の突入電流から機器を保護するために、突入電流を制
限するための制限回路が設けられる。また、同様に過負
荷時に生じる過電流から機器を保護するための制限回路
も設けられている。このため、従来の電源回路では、突
入電流制限回路と過電流制限回路の双方を夫々設けてい
る。
In order to protect the equipment from inrush currents at times, a limiting circuit is provided to limit the inrush currents. Similarly, a limiting circuit is also provided to protect the device from overcurrent that occurs during overload. For this reason, conventional power supply circuits are provided with both an inrush current limiting circuit and an overcurrent limiting circuit.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の電源回路では、突入電流を制限する回路
と、過電流を制限する回路とを夫々個別に構成し、これ
ら各回路を本来の電源回路に付設する構成となっている
。このため、電源回路全体の構成が複雑になるとともに
、相互に重複する部品を搭載することになって電源回路
の小型化、低コスト化の障害になるという問題がある。
In the conventional power supply circuit described above, a circuit for limiting inrush current and a circuit for limiting overcurrent are separately configured, and each of these circuits is attached to the original power supply circuit. For this reason, there is a problem that the configuration of the entire power supply circuit becomes complicated, and mutually overlapping parts are mounted, which becomes an obstacle to miniaturization and cost reduction of the power supply circuit.

本発明は構成の簡略化とともに小型化、低コスト化を可
能とした電流制限回路を提供することを目的としている
SUMMARY OF THE INVENTION An object of the present invention is to provide a current limiting circuit that has a simplified configuration, is smaller in size, and can be lowered in cost.

[課題を解決するための手段] 本発明の電流制限回路は、入力端子と出力端子とを結ぶ
電源ライン間にソース・ドレインを接続した電界効果ト
ランジスタ(以下、FETと称する)と、このソース・
ドルイン間に接続した入力抵抗と、前記電源ラインに接
続した入力コンデンサと、前記FETのソース・ゲート
間に介挿されてゲート電圧を制御するゲート電圧制御ト
ランジスタと、前記FETのソース・ドレイン間の電圧
を検出して前記ゲート電圧制御トランジスタに所定の信
号を出力する電圧検出・制御回路とを備えている。
[Means for Solving the Problems] The current limiting circuit of the present invention includes a field effect transistor (hereinafter referred to as FET) whose source and drain are connected between a power supply line connecting an input terminal and an output terminal, and a field effect transistor (hereinafter referred to as FET) whose source
an input resistor connected between the input resistors, an input capacitor connected to the power supply line, a gate voltage control transistor inserted between the source and gate of the FET to control the gate voltage, and a gate voltage control transistor connected between the source and drain of the FET. and a voltage detection/control circuit that detects voltage and outputs a predetermined signal to the gate voltage control transistor.

〔作用〕[Effect]

上述した構成では、FETのオフ状態の時に入力抵抗、
入力コンデンサにより突入電流を制限し、その後FET
をオンさせて所要の電流を確保し、かつ過電流時にはF
ETのソース・ドレイン間電圧に基づく電圧検出・制御
回路の作用によってゲート電圧制御トランジスタを介し
てFETを抑制方向に動作させて過電流を制限する。
In the above configuration, when the FET is in the off state, the input resistance,
The input capacitor limits the inrush current, then the FET
is turned on to ensure the required current, and in the event of overcurrent, F is turned on.
The FET is operated in the suppressing direction via the gate voltage control transistor by the action of the voltage detection/control circuit based on the source-drain voltage of the ET, thereby limiting the overcurrent.

〔実施例〕〔Example〕

次に、本発明を図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

図は本発明の一実施例の回路図であり、電源入力側端子
INと電源出力側端子OUTとを結ぶ電源ラインの間に
FET(電界効果トランジスタ)1のソース・ドレイン
を接続している。このFET1のソース・ドレイン間に
は入力抵抗2が接続され、かつドレイン側には突入電流
を吸収する入力コンデンサ3を接続している。また、ソ
ースにはゲートとの間に前記入力コンデンサ3よりも大
きな容量のコンデンサ4と抵抗5を接続し、またバイポ
ーラトランジスタで構成されて前記FET1のゲート電
圧を制御するゲート電圧制御トランジスタ8のコレクタ
、エミッタをダイオード6及び抵抗7を介して接続して
いる。更に、FETIのゲートには定電流ダイオード9
を接続している。
The figure is a circuit diagram of an embodiment of the present invention, in which the source and drain of an FET (field effect transistor) 1 are connected between a power line connecting a power input terminal IN and a power output terminal OUT. An input resistor 2 is connected between the source and drain of this FET 1, and an input capacitor 3 for absorbing rush current is connected to the drain side. Further, a capacitor 4 having a larger capacity than the input capacitor 3 and a resistor 5 are connected between the source and the gate, and a collector of a gate voltage control transistor 8, which is composed of a bipolar transistor and controls the gate voltage of the FET 1, is connected between the source and the gate. , the emitters are connected via a diode 6 and a resistor 7. Furthermore, a constant current diode 9 is connected to the gate of FETI.
are connected.

なお、抵抗10.及び11は夫々ゲート電圧制御トラン
ジスタ8の入力抵抗、及びバイアス抵抗である。
In addition, resistance 10. and 11 are the input resistance and bias resistance of the gate voltage control transistor 8, respectively.

一方、前記FETIのソース、ドレイン端abは、演算
増幅器12と抵抗13〜19で構成されて前記ソース・
ドレイン間の電圧を検出する電圧検出・制御コ七回路の
回路端a’、b’に夫々接続される。また、この回路の
出力端C′は、前記ゲート電圧制御トランジスタ8のベ
ース端Cに接続される。
On the other hand, the source and drain terminals ab of the FETI are composed of an operational amplifier 12 and resistors 13 to 19.
They are respectively connected to circuit ends a' and b' of a voltage detection/control circuit that detects the voltage between the drains. Further, the output terminal C' of this circuit is connected to the base terminal C of the gate voltage control transistor 8.

この回路によれば、図外の電源開閉器をオンにした直後
はFETIはオフの状態にあり、入力側端子INKご入
力される電流は入力抵抗2で制限された上で入力コンデ
ンサ3にチャージされ、これで出力側端子OU Tに出
力される突入電流を防止する。
According to this circuit, immediately after the power switch (not shown) is turned on, the FETI is in the off state, and the current input to the input terminal INK is limited by the input resistor 2 and charged to the input capacitor 3. This prevents inrush current from being output to the output terminal OUT.

入力コンデンサ3におけるチャージが行われた後、多少
遅れてコンデンサ4もチャージされ、このコンデンサ4
の両端電圧によりFETIがオンされる。これにより、
F E T 1のソース・ドレイン間は低抵抗状態とさ
れ、電源回路の通常電流はこのソース・ドレイン間を通
って出力される。
After input capacitor 3 is charged, capacitor 4 is also charged with some delay, and this capacitor 4
FETI is turned on by the voltage across it. This results in
A low resistance state is established between the source and drain of F E T 1, and the normal current of the power supply circuit is outputted through this source and drain.

一方、過負荷時にはFETIに流れる電流の増加とFE
TIのソース・ドレイン抵抗との積によリソース、ドレ
イン端a−b間の電圧が増大する。
On the other hand, during overload, the current flowing through FETI increases and FE
The voltage between the resource and drain terminals a and b increases due to the product of TI and the source/drain resistance.

この電圧は回路端a′−b′を通して電圧検出・制御回
路において検出され、その出力がゲート電圧制御トラン
ジスタ8のベースに供給される。この結果、それまでオ
フ状態にあったゲート電圧制御トランジスタ8がオン方
向に動作され、FET1のゲート・ソース間電圧を変化
させ、FETIのソース・ドレイン間電流を制限する。
This voltage is detected in a voltage detection and control circuit through circuit terminals a'-b', and its output is supplied to the base of the gate voltage control transistor 8. As a result, the gate voltage control transistor 8, which had been in the off state until then, is turned on, changing the gate-source voltage of the FET 1, and limiting the source-drain current of the FETI.

これにより、出力側端子0tJTへの電流が制限され、
過電流を防止する。
This limits the current to the output terminal 0tJT,
Prevent overcurrent.

したがって、この例では1つのFETIを突入電流の制
限と過電流の制限の双方に利用し、かつその他の回路部
品をも双方の電流制限に利用することにより、部品点数
の削減及び回路の簡略化が可能となる。
Therefore, in this example, one FETI is used for both inrush current limiting and overcurrent limiting, and other circuit components are also used for both current limiting, thereby reducing the number of components and simplifying the circuit. becomes possible.

[発明の効果] 以上説明したように本発明は、FETのオフ状態の時に
入力抵抗、入力コンデンサにより突入電流を制限し、過
電流時にはFETのソース・ドレイン間電圧に基づく電
圧検出・制御回路の作用によってゲート電圧制御トラン
ジスタを介してFETを抑制方向に動作させて過電流を
制限するので、FETやその他の部品を突入電流制限回
路と過電流制限回路の双方に利用でき、部品数を低減し
、回路の簡略化を図るとともに小型化、低コスト化を達
成できる。
[Effects of the Invention] As explained above, the present invention limits the inrush current using the input resistor and input capacitor when the FET is in the OFF state, and when overcurrent occurs, the voltage detection/control circuit based on the source-drain voltage of the FET limits the inrush current. This action causes the FET to operate in the suppressing direction via the gate voltage control transistor to limit overcurrent, so the FET and other components can be used for both the inrush current limiting circuit and the overcurrent limiting circuit, reducing the number of components. , it is possible to simplify the circuit and achieve miniaturization and cost reduction.

【図面の簡単な説明】[Brief explanation of the drawing]

図は本発明の一実施例の回路図である。 1・・・電界効果トランジスタ(FET)、2・・・入
力抵抗、3・・・入力コンデンサ、4・・・コンデンサ
、5・・・抵抗、6・・・ダイオード、7・・・抵抗、
8・・・ゲート電圧制御トランジスタ、9・・・定電流
ダイオード、10.11・・・抵抗、12・・・演算増
幅器、  13〜19・・・抵抗。 手続(甫正書(方式) %式% 事件の表示 昭和63年 特 許 願 第 75920号 発明の名称 電流制限回路 補正をする者 事件との関係 特 許 出 願 人 称 日本電気株式会社 理 人 所 〒103東京都中央区日本橋本町3−1−6永谷ビル 
907号 補正の対象 図面 り 電β捜と・$・腫?、0芹 @g檀工盪j等口路
The figure is a circuit diagram of an embodiment of the present invention. 1... Field effect transistor (FET), 2... Input resistance, 3... Input capacitor, 4... Capacitor, 5... Resistor, 6... Diode, 7... Resistor,
8... Gate voltage control transistor, 9... Constant current diode, 10.11... Resistor, 12... Operational amplifier, 13-19... Resistor. Procedures (Method) % Formula % Display of the case 1986 Patent Application No. 75920 Name of the invention Person who amends the current limiting circuit Related to the case Patent applicant Name NEC Co., Ltd. Rijinsho 103 Tokyo Nagatani Building, 3-1-6 Nihonbashi Honmachi, Chuo-ku
907 amendment target drawing riden β search and $ tumor? , 0芹@gdan 工抽j等口路

Claims (1)

【特許請求の範囲】[Claims] 1、入力端子と出力端子とを結ぶ電源ライン間にソース
・ドレインを接続した電界効果トランジスタと、このソ
ース・ドレイン間に接続した入力抵抗と、前記電源ライ
ンに接続した入力コンデンサと、前記電界効果トランジ
スタのソース・ゲート間に介挿されてゲート電圧を制御
するゲート電圧制御トランジスタと、前記電界効果トラ
ンジスタのソース・ドレイン間の電圧を検出して前記ゲ
ート電圧制御トランジスタに所定の信号を出力する電圧
検出・制御回路とを備えることを特徴とする電流制限回
路。
1. A field effect transistor whose source and drain are connected between the power supply lines connecting the input terminal and the output terminal, an input resistor connected between the source and drain, an input capacitor connected to the power supply line, and the field effect transistor. a gate voltage control transistor that is inserted between the source and gate of the transistor to control the gate voltage; and a voltage that detects the voltage between the source and drain of the field effect transistor and outputs a predetermined signal to the gate voltage control transistor. A current limiting circuit comprising a detection/control circuit.
JP7592088A 1988-03-31 1988-03-31 Current limiter circuit Pending JPH02111223A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7592088A JPH02111223A (en) 1988-03-31 1988-03-31 Current limiter circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7592088A JPH02111223A (en) 1988-03-31 1988-03-31 Current limiter circuit

Publications (1)

Publication Number Publication Date
JPH02111223A true JPH02111223A (en) 1990-04-24

Family

ID=13590230

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7592088A Pending JPH02111223A (en) 1988-03-31 1988-03-31 Current limiter circuit

Country Status (1)

Country Link
JP (1) JPH02111223A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04156224A (en) * 1990-10-16 1992-05-28 Sankyo Seiki Mfg Co Ltd Rush current preventive circuit
JPH04229019A (en) * 1990-09-04 1992-08-18 Internatl Business Mach Corp <Ibm> Rectifier for limiting current and current sensing circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04229019A (en) * 1990-09-04 1992-08-18 Internatl Business Mach Corp <Ibm> Rectifier for limiting current and current sensing circuit
JPH04156224A (en) * 1990-10-16 1992-05-28 Sankyo Seiki Mfg Co Ltd Rush current preventive circuit

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