JPH0210921B2 - - Google Patents
Info
- Publication number
- JPH0210921B2 JPH0210921B2 JP2014880A JP2014880A JPH0210921B2 JP H0210921 B2 JPH0210921 B2 JP H0210921B2 JP 2014880 A JP2014880 A JP 2014880A JP 2014880 A JP2014880 A JP 2014880A JP H0210921 B2 JPH0210921 B2 JP H0210921B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- conductive film
- liquid crystal
- transparent conductive
- refractive index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 description 22
- 239000004973 liquid crystal related substance Substances 0.000 description 14
- 238000000576 coating method Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 125000002524 organometallic group Chemical group 0.000 description 4
- 238000005979 thermal decomposition reaction Methods 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- -1 etc.) Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- DVQHRBFGRZHMSR-UHFFFAOYSA-N sodium methyl 2,2-dimethyl-4,6-dioxo-5-(N-prop-2-enoxy-C-propylcarbonimidoyl)cyclohexane-1-carboxylate Chemical compound [Na+].C=CCON=C(CCC)[C-]1C(=O)CC(C)(C)C(C(=O)OC)C1=O DVQHRBFGRZHMSR-UHFFFAOYSA-N 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- KSCKTBJJRVPGKM-UHFFFAOYSA-N octan-1-olate;titanium(4+) Chemical compound [Ti+4].CCCCCCCC[O-].CCCCCCCC[O-].CCCCCCCC[O-].CCCCCCCC[O-] KSCKTBJJRVPGKM-UHFFFAOYSA-N 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- UQMOLLPKNHFRAC-UHFFFAOYSA-N tetrabutyl silicate Chemical compound CCCCO[Si](OCCCC)(OCCCC)OCCCC UQMOLLPKNHFRAC-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Liquid Crystal (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
【発明の詳細な説明】
本発明は、液晶パネルの製造方法に関するもの
であり、特に透明導電膜の目立ち防止処理方法に
関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a liquid crystal panel, and more particularly to a method for treating a transparent conductive film to prevent it from becoming conspicuous.
従来からの液晶パネルは、基板と液晶と透明導
電膜の屈折率が異なるため、透明導電膜の目立ち
(ギラギラしたり、少し暗く見える)がおこり、
表示品質を著しく損ねる欠点を有していた。この
欠点を解決する手段として、基板上又は透明導電
膜上から、基板と透明導電膜の中間の屈折率を有
する透明絶縁被膜を所定の厚みに被覆することに
より、透明導電膜の目立ちが防止できることは知
られている。このような透明絶縁膜目立ち防止処
理として、有機金属の熱分解法が優れている。こ
の場合、基板を有機金属を溶解した有機溶媒に浸
漬等速引き上げにより塗布する方法が、膜の均一
性,作業性,コスト面から優れているが、この場
合、液晶と接しない基板裏面にまで、透明絶縁被
膜が被覆され、パネル全体が少し暗くなる欠点を
有していた。この液晶と接しない裏面の反射率
(視感度補正された平均反射率)は、空気と接す
る場合、約2〜3%にも達する。又、偏光板を粘
着剤(n≒1.5)等ではりつけた場合でも、0.5〜
1%に達する。このような絶縁膜のない場合、基
板と粘着剤の間の反射は、無視できる程である。
なぜなら、基板n≒1.5,粘着剤n≒1.5であるか
ら。よつて、このような基板と透明導電膜の中間
の屈折率を有する透明絶縁被膜は、液晶と接する
側の面にだけ被覆するのが望ましい。かかる欠点
を解決する方法として、種々検討した結果、片面
マスクの方法として、フツ素系樹脂のコートが優
れていることがわかつた。浸漬法で被覆するとき
に、液にぬれないことが前提条件である。PVA
等のインクによると、インク上に形成された有機
金属被膜が、熱分解の際に基板上に再付着してし
まうからである。このようなフツ素系樹脂をコー
トする方法として、蒸着,スプレー,ロールコー
ト,ハケ塗り,スクリーン印刷,オフセツト印刷
等が考えられる。フツ素系樹脂とは、Fレージン
(帝人の商標),テフロン(デユポン社の商標),
フツ素系界面活性剤,FX液(住友3Mの商標)等
がある。その厚さは、単分子層以上なら本発明の
目的にかなうものである。 In conventional liquid crystal panels, the refractive index of the substrate, liquid crystal, and transparent conductive film is different, which causes the transparent conductive film to stand out (glare or look a little dark).
This had the drawback of significantly impairing display quality. As a means to solve this drawback, it is possible to prevent the transparent conductive film from becoming noticeable by coating the substrate or the transparent conductive film with a transparent insulating film having a refractive index between that of the substrate and the transparent conductive film to a predetermined thickness. is known. An organic metal thermal decomposition method is excellent as a treatment for preventing such a transparent insulating film from becoming conspicuous. In this case, the method of dipping the substrate in an organic solvent containing an organic metal and pulling it up at a constant speed is superior in terms of film uniformity, workability, and cost. However, it had the disadvantage that it was coated with a transparent insulating film, making the entire panel a little dark. The reflectance of the back surface that does not come into contact with the liquid crystal (average reflectance corrected for visibility) reaches about 2 to 3% when it comes into contact with air. Also, even if the polarizing plate is attached with an adhesive (n≒1.5), the
It reaches 1%. Without such an insulating film, reflections between the substrate and the adhesive are negligible.
This is because the substrate n≒1.5 and the adhesive n≒1.5. Therefore, it is desirable that such a transparent insulating film having a refractive index between that of the substrate and the transparent conductive film be coated only on the side that is in contact with the liquid crystal. As a result of various studies to solve this drawback, it was found that coating with fluororesin is an excellent method for forming a single-sided mask. When coating by dipping, it is a prerequisite that the material does not get wet. PVA
This is because, when using such ink, the organometallic film formed on the ink re-adheres to the substrate during thermal decomposition. Possible methods for coating with such a fluororesin include vapor deposition, spraying, roll coating, brush coating, screen printing, and offset printing. Fluorine-based resins include F resin (Teijin trademark), Teflon (DuPont trademark),
Examples include fluorine-based surfactants and FX liquid (trademark of Sumitomo 3M). If the thickness is at least a monomolecular layer, it will meet the objectives of the present invention.
また、本発明は透明絶縁膜を透明導電膜上から
被覆して、透明導電膜の目立ちを防止する場合に
も適用できる。この時、端子部,上下導通部を被
覆しないようにする必要があるが、この場合も、
フツ素系樹脂が優れていることがわかつた。いず
れにしても、本発明は基板上に必要な箇所だけ、
有機金属の浸漬等速引き上げ法により被覆する場
合、マスク剤としてフツ素系樹脂が優れているこ
とを見いだした点である。 Further, the present invention can also be applied to cases in which a transparent insulating film is coated over a transparent conductive film to prevent the transparent conductive film from being noticeable. At this time, it is necessary to avoid covering the terminals and upper and lower conductive parts, but in this case,
It was found that fluorine-based resins are superior. In any case, the present invention allows only the necessary parts to be placed on the board.
It has been discovered that fluororesin is excellent as a masking agent when coating by the organic metal immersion constant velocity pulling method.
本発明に用いられる基板としては、相対する基
板の少なくとも一方が透明であればよく、材料と
して、ガラス(ソーダ系ガラス,ホウケイ酸系ガ
ラス,他),セラミツク,プラスチツク等が用い
られる。場合によつては、これらを組み合わせて
用いてもよい。又、この基板上に形成する透明絶
縁被膜は、酸化ケイ素と酸化チタンの混合物が良
く、モル分率により、1.45〜2.3の間で屈折率を
調整できる。膜厚は100Å〜3000Å、好ましくは
200Å〜1500Å範囲であり、透明導電膜目立ち防
止の目的からして、この屈折率により適正値及び
適正範囲が存在する。屈折率が小さいと膜厚を大
きく、屈折率が大きければ膜厚は小さくなる。こ
のような混合絶縁被膜は、それぞれの有機金属を
含む有機溶媒に基板を浸漬後、等速引き上げ塗布
し、50〜200℃で乾燥後、300〜600℃の基板の耐
熱性の範囲で熱分解させる。有機金属とは、ケイ
素及びチタンのアルコキシ金属,キレート,アシ
レート等であり、これらから1種類以上、場合に
よつては、ケイ素とチタンで種類の異なるものを
選んで用いれば良い。 The substrate used in the present invention may be made of glass (soda glass, borosilicate glass, etc.), ceramic, plastic, etc. as long as at least one of the opposing substrates is transparent. Depending on the case, these may be used in combination. The transparent insulating film formed on this substrate is preferably a mixture of silicon oxide and titanium oxide, and the refractive index can be adjusted between 1.45 and 2.3 by changing the molar fraction. Film thickness is 100Å to 3000Å, preferably
The refractive index ranges from 200 Å to 1500 Å, and for the purpose of preventing the transparent conductive film from standing out, there are appropriate values and ranges depending on the refractive index. The smaller the refractive index, the larger the film thickness, and the larger the refractive index, the smaller the film thickness. Such mixed insulating coatings are made by dipping the substrate in an organic solvent containing each organic metal, then pulling it up at a constant speed, drying it at 50 to 200℃, and then thermally decomposing it within the heat resistance range of the substrate at 300 to 600℃. let The organic metals include alkoxy metals, chelates, acylates, etc. of silicon and titanium, and one or more types thereof, and in some cases, different types of silicon and titanium may be selected and used.
以下、実施例によつて本発明を説明する。 The present invention will be explained below with reference to Examples.
実施例1 (第1図,第2図参照)
ホウケイ酸系ガラス1の片面にフツ素系樹脂2
としてFレージン(帝人製)の0.5%アセトン溶
液をスプレーした。(第1図―1)100℃でキユア
ー後、下記の組成から成る有機金属液に浸漬し
た。Example 1 (See Figures 1 and 2) Fluorine resin 2 was coated on one side of borosilicate glass 1.
As a solution, a 0.5% acetone solution of F resin (manufactured by Teijin) was sprayed. (Figure 1-1) After curing at 100°C, it was immersed in an organometallic liquid having the following composition.
イソプピルアルコール 100部
テトラブトキシシラン 10部
テトラオクチルオキシチタン 20部
アセチルアセトン 10部
塩酸 6N 1部
10cm/minで等速引き上げ後120℃で15分キユ
アを行ない(第1図―2)、さらに500℃で1時間
焼成を行つた(第1図―3)。等速引き上げ時に、
Fレージンが被覆された面は上記液をハジき全く
ぬれなかつた。又500℃の熱分解時にフツ素系樹
脂2も熱分解し、全く痕跡もなかつた。有機金属
被膜3は約700Åで屈折率1.75を有していた。Isopropyl alcohol 100 parts Tetrabutoxysilane 10 parts Tetraoctyloxytitanium 20 parts Acetylacetone 10 parts Hydrochloric acid 6N 1 part After pulling at a constant speed of 10 cm/min, cure at 120°C for 15 minutes (Figure 1-2), and then heat to 500°C. Baking was performed for 1 hour (Figure 1-3). When pulling at a constant speed,
The surface coated with F resin was not wetted by the above liquid at all. Furthermore, during the thermal decomposition at 500°C, the fluororesin 2 was also thermally decomposed, leaving no trace at all. Organometallic coating 3 was approximately 700 Å and had a refractive index of 1.75.
次に有機金属被覆膜3上にCVD法で透明導電
膜4として酸化スズを400Å被覆した(第1図―
4)。所定のフオト工程を経て、Zn―HClでパタ
ーニングを行なつた(第1図―5)。このような
第1図―5のような基板2枚を用い、シラン系カ
ツプリング剤で処理後、綿布で一定方向ラビング
を行ない、第2図に示すようなFETN型液晶表
示パネルを組み立てた。5はTN液晶、6はエポ
キシ系接着剤によるシーールで、10μmのアルミ
ナギヤツプ剤を含んでなる。第2図の液晶パネル
は透明導電膜4は全く目立たなかつた。又基板1
の両面に被膜3を被覆したものよりも一段と明る
さを増した。 Next, tin oxide was coated with a thickness of 400 Å on the organometallic coating film 3 as a transparent conductive film 4 using the CVD method (Fig.
4). After a prescribed photo process, patterning was performed using Zn-HCl (Figure 1-5). Using two such substrates as shown in Figure 1-5, they were treated with a silane coupling agent and then rubbed in a certain direction with a cotton cloth to assemble a FETN type liquid crystal display panel as shown in Figure 2. 5 is a TN liquid crystal, and 6 is a seal using an epoxy adhesive, which includes a 10 μm alumina gapping agent. In the liquid crystal panel shown in FIG. 2, the transparent conductive film 4 was not noticeable at all. Also board 1
The brightness was further increased compared to the one in which both sides were coated with Coating 3.
比較例 1
フツ素系樹脂の代わりにポリビニルアルコール
を用いた場合、有機金属液に浸漬等速引き上げし
た時、ポリビニルアルコール被膜上にも有機金属
が被覆され熱分解時に基板1に再付着し、きれい
な外観が得られなかつた。Comparative Example 1 When polyvinyl alcohol is used instead of fluororesin, when it is immersed in an organic metal solution and pulled up at a constant speed, the organic metal is also coated on the polyvinyl alcohol film and reattached to the substrate 1 during thermal decomposition, resulting in a clean I couldn't get the appearance.
実施例2 (第3図,第4図参照)
実施例1と同様の基板1上に酸化スズを5%ド
ープした酸化インジウム透明導電膜4を200Å蒸
着法を用い形成した(第3図―1)。所定のフオ
ト工程を経てHClを用い第3図―2のごとくバタ
ーニングを行なつた。上下導通部7及びリード部
8(選択的マスキングをしてから)及び、4とそ
の反対面である基板裏面にFX液(住友3M製)か
らなるフツ素系樹脂2をハケ塗りした(第3図―
3)。次に下記の有機金属を含む液に浸漬した。Example 2 (See Figures 3 and 4) An indium oxide transparent conductive film 4 doped with 5% tin oxide was formed on the same substrate 1 as in Example 1 using a 200 Å vapor deposition method (see Figure 3-1). ). After a prescribed photo process, buttering was performed using HCl as shown in Figure 3-2. Fluorine-based resin 2 made of FX liquid (manufactured by Sumitomo 3M) was applied by brush to the upper and lower conductive parts 7 and lead parts 8 (after selective masking), 4 and the back side of the board, which is the opposite surface. figure-
3). Next, it was immersed in a liquid containing the following organic metal.
アトロンNSi:10(日本ソーダ製)80部
アトロンNTi:(日本ソーダ製)20部
15cm/minで等速引き上げ塗布した(第3図―
4)。60℃で乾燥後500℃で1時間熱分解した。冷
却すると第3図―5の構造が得られた。フツ素樹
脂2は熱分解してコン跡が存在しなかつた。この
ような基板を2枚組み合わせ実施例1と同様にし
て液晶パネル第(4図参照)を組み立てた。9は
銀ペーストであり上下導通の働きを成す。第4図
の液晶パネルは、従来品に比較して透明導電膜4
の目立ちは全くなく、又基板1の両面に透明絶縁
膜3を形成したものより明るかつた。又上記導電
膜4上に絶縁膜3を被覆して成るため、パネルの
消費電流が約3割低減した。又透明導電膜4の基
板1との段差が少なくなり、特に透明導電膜4の
エツジ部で著しいため点灯時におけるドメインが
減少した。 Atron NSi: 10 (manufactured by Nippon Soda) 80 parts Atron NTi: (manufactured by Nippon Soda) 20 parts Pulled up and applied at a constant speed of 15 cm/min (Fig. 3)
4). After drying at 60°C, it was thermally decomposed at 500°C for 1 hour. When cooled, the structure shown in Figure 3-5 was obtained. The fluororesin 2 was thermally decomposed and there was no trace of a compound. A liquid crystal panel (see FIG. 4) was assembled in the same manner as in Example 1 by combining two such substrates. Reference numeral 9 is a silver paste, which functions as vertical conduction. The liquid crystal panel shown in Figure 4 has a transparent conductive film 4 compared to conventional products.
was not noticeable at all, and was brighter than the one in which the transparent insulating film 3 was formed on both sides of the substrate 1. Furthermore, since the conductive film 4 is coated with the insulating film 3, the current consumption of the panel is reduced by about 30%. Furthermore, the level difference between the transparent conductive film 4 and the substrate 1 is reduced, and this is particularly noticeable at the edge portions of the transparent conductive film 4, so that the domain during lighting is reduced.
第2図及び第4図の構造の液晶パネルは
FETNモード以外にも、GH,相転移型GH,
DSM,DAP等の液晶表示モード、その他EL,
EPID,EL,コロイダルライトバルブ等にも応用
可能である。本発明を用いた液晶表示素子は、時
計,電卓等に用いられ、従来よりも表示品質が格
段と良くなつた。 The liquid crystal panel with the structure shown in Figures 2 and 4 is
In addition to FETN mode, GH, phase transition type GH,
LCD display modes such as DSM, DAP, other EL,
It can also be applied to EPID, EL, colloidal light valves, etc. The liquid crystal display element using the present invention is used in watches, calculators, etc., and the display quality is much better than before.
以上述べたように、本発明によれば、基板上の
必要な箇所に透明絶縁被膜を容易に形成できる。
さらに、浸漬等速引き上げ法によるので、一度に
多量の処理が可能であり、したがつて、量産性の
高い製造方法が提供できる。また、有機ケイ素お
よび有機チタンが溶解された有機溶媒を用いたの
で、透明絶縁被膜の屈折率の調整が可能である。 As described above, according to the present invention, a transparent insulating film can be easily formed at necessary locations on a substrate.
Furthermore, since the immersion constant velocity pulling method is used, a large amount can be processed at one time, and therefore a manufacturing method with high mass productivity can be provided. Furthermore, since an organic solvent in which organosilicon and organotitanium were dissolved was used, it is possible to adjust the refractive index of the transparent insulating film.
第1図は本発明の実施例1による基板を製造工
程ごとに示した断面図。第2図は本発明の実施例
1の液晶パネルの断面図。第3図は本発明の実施
例2による基板を製造工程ごとに示した断面図。
第4図は本発明の実施例2の液晶パネルの断面
図。
10,11……偏光板。
FIG. 1 is a cross-sectional view showing each manufacturing process of a substrate according to Example 1 of the present invention. FIG. 2 is a sectional view of a liquid crystal panel according to Example 1 of the present invention. FIG. 3 is a cross-sectional view showing each manufacturing process of a substrate according to Example 2 of the present invention.
FIG. 4 is a sectional view of a liquid crystal panel according to a second embodiment of the present invention. 10, 11...Polarizing plate.
Claims (1)
透明導電膜上に、該透明導電膜の屈折率と前記基
板の屈折率の中間の屈折率を有し該透明導電膜の
目立ちを防止する透明絶縁被膜を形成してなる液
晶パネルの製造方法において、前記基板の他方の
面上および前記一方の面の任意の箇所をフツ素系
樹脂で被覆処理し、有機ケイ素および有機チタン
が溶解された有機溶媒を浸漬等速引き上げ法によ
り前記基板上に塗布した後、加熱処理によつて前
記透明絶縁被膜を形成するとともに前記フツ素系
樹脂を熱分解することを特徴とする液晶パネルの
製造方法。 2 前記フツ素系樹脂を上下導通部およびまたは
リード部に被覆形成したことを特徴とする特許請
求の範囲第1項記載の液晶パネルの製造方法。[Scope of Claims] 1. On one surface of a substrate or on a transparent conductive film formed on the surface, the transparent conductive film has a refractive index intermediate between the refractive index of the transparent conductive film and the refractive index of the substrate. In a method of manufacturing a liquid crystal panel in which a transparent insulating film is formed to prevent the conspicuousness of a conductive film, the other surface of the substrate and any part of the one surface are coated with a fluorine-based resin, and an organosilicon and applying an organic solvent in which organic titanium is dissolved onto the substrate by a dipping constant velocity pulling method, and then forming the transparent insulating film by heat treatment and thermally decomposing the fluororesin. A manufacturing method for liquid crystal panels. 2. The method of manufacturing a liquid crystal panel according to claim 1, wherein the fluorine-based resin is coated on the upper and lower conductive parts and/or the lead parts.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014880A JPS56116016A (en) | 1980-02-20 | 1980-02-20 | Manufacture of liquid crystal panel |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014880A JPS56116016A (en) | 1980-02-20 | 1980-02-20 | Manufacture of liquid crystal panel |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56116016A JPS56116016A (en) | 1981-09-11 |
JPH0210921B2 true JPH0210921B2 (en) | 1990-03-12 |
Family
ID=12019060
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014880A Granted JPS56116016A (en) | 1980-02-20 | 1980-02-20 | Manufacture of liquid crystal panel |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56116016A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS606943A (en) * | 1983-06-25 | 1985-01-14 | Futaba Corp | Photosensitive composition and formation of micropattern by using it |
JPS61184532A (en) * | 1985-02-13 | 1986-08-18 | Tokyo Denshi Kagaku Kk | Photosensitive comosition |
JPH03132623A (en) * | 1989-10-18 | 1991-06-06 | Canon Inc | Liquid crystal element |
-
1980
- 1980-02-20 JP JP2014880A patent/JPS56116016A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS56116016A (en) | 1981-09-11 |
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